CN107046072A - A kind of polycrystalline process for etching for improving the solar panel matte uniformity - Google Patents
A kind of polycrystalline process for etching for improving the solar panel matte uniformity Download PDFInfo
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- CN107046072A CN107046072A CN201710259503.4A CN201710259503A CN107046072A CN 107046072 A CN107046072 A CN 107046072A CN 201710259503 A CN201710259503 A CN 201710259503A CN 107046072 A CN107046072 A CN 107046072A
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- wool
- making herbs
- making
- etching
- solar panel
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000005530 etching Methods 0.000 title claims abstract description 19
- 235000008216 herbs Nutrition 0.000 claims abstract description 46
- 210000002268 wool Anatomy 0.000 claims abstract description 46
- KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000003381 stabilizer Substances 0.000 claims abstract description 36
- 239000002280 amphoteric surfactant Substances 0.000 claims abstract description 29
- 239000007788 liquid Substances 0.000 claims abstract description 27
- -1 phosphate ester salt Chemical class 0.000 claims abstract description 23
- 229960003237 betaine Drugs 0.000 claims abstract description 22
- 239000002253 acid Substances 0.000 claims abstract description 20
- 239000000203 mixture Substances 0.000 claims abstract description 13
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 238000005260 corrosion Methods 0.000 claims abstract description 9
- 230000007797 corrosion Effects 0.000 claims abstract description 9
- 229910019142 PO4 Inorganic materials 0.000 claims abstract description 8
- 150000007942 carboxylates Chemical class 0.000 claims abstract description 8
- 239000010452 phosphate Substances 0.000 claims abstract description 8
- 238000009472 formulation Methods 0.000 claims abstract description 7
- 239000002671 adjuvant Substances 0.000 claims abstract description 6
- 239000008367 deionised water Substances 0.000 claims abstract description 6
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 6
- 239000002994 raw material Substances 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 29
- 125000000217 alkyl group Chemical group 0.000 claims description 16
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 10
- PSBDWGZCVUAZQS-UHFFFAOYSA-N (dimethylsulfonio)acetate Chemical compound C[S+](C)CC([O-])=O PSBDWGZCVUAZQS-UHFFFAOYSA-N 0.000 claims description 5
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims description 5
- QZCLKYGREBVARF-UHFFFAOYSA-N Acetyl tributyl citrate Chemical group CCCCOC(=O)CC(C(=O)OCCCC)(OC(C)=O)CC(=O)OCCCC QZCLKYGREBVARF-UHFFFAOYSA-N 0.000 claims description 5
- 239000004698 Polyethylene Substances 0.000 claims description 5
- 229920002125 Sokalan® Polymers 0.000 claims description 5
- DOOTYTYQINUNNV-UHFFFAOYSA-N Triethyl citrate Chemical compound CCOC(=O)CC(O)(C(=O)OCC)CC(=O)OCC DOOTYTYQINUNNV-UHFFFAOYSA-N 0.000 claims description 5
- 239000004584 polyacrylic acid Substances 0.000 claims description 5
- 229920000768 polyamine Polymers 0.000 claims description 5
- 229920000573 polyethylene Polymers 0.000 claims description 5
- 229940117986 sulfobetaine Drugs 0.000 claims description 5
- 229960001124 trientine Drugs 0.000 claims description 5
- 239000001069 triethyl citrate Substances 0.000 claims description 5
- VMYFZRTXGLUXMZ-UHFFFAOYSA-N triethyl citrate Natural products CCOC(=O)C(O)(C(=O)OCC)C(=O)OCC VMYFZRTXGLUXMZ-UHFFFAOYSA-N 0.000 claims description 5
- 235000013769 triethyl citrate Nutrition 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 4
- KWIUHFFTVRNATP-UHFFFAOYSA-O N,N,N-trimethylglycinium Chemical compound C[N+](C)(C)CC(O)=O KWIUHFFTVRNATP-UHFFFAOYSA-O 0.000 claims 2
- 150000001336 alkenes Chemical class 0.000 claims 1
- SCLZECIYQZZZBU-UHFFFAOYSA-N azanium;benzene-1,2-diol;hydroxide Chemical compound [NH4+].[OH-].OC1=CC=CC=C1O SCLZECIYQZZZBU-UHFFFAOYSA-N 0.000 claims 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 claims 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 18
- 238000002310 reflectometry Methods 0.000 abstract description 16
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 229920005591 polysilicon Polymers 0.000 description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 18
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Natural products OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 10
- 238000002156 mixing Methods 0.000 description 5
- 150000003566 thiocarboxylic acids Chemical class 0.000 description 5
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- 239000000908 ammonium hydroxide Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 125000000129 anionic group Chemical group 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 210000004209 hair Anatomy 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- FDRCDNZGSXJAFP-UHFFFAOYSA-M sodium chloroacetate Chemical compound [Na+].[O-]C(=O)CCl FDRCDNZGSXJAFP-UHFFFAOYSA-M 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 244000248349 Citrus limon Species 0.000 description 1
- 235000005979 Citrus limon Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- WGYKZJWCGVVSQN-UHFFFAOYSA-N mono-n-propyl amine Natural products CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- ROSDSFDQCJNGOL-UHFFFAOYSA-N protonated dimethyl amine Natural products CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to the manufacture technology field of solar cell, in particular a kind of polycrystalline process for etching for improving the solar panel matte uniformity comprises the following steps：1) formulation aids：Betaine type amphoteric surfac-tant, phosphate ester salt or carboxylate, stabilizer, citrate and deionized water are mixed；Weight/mass percentage composition ratio is 0.2~1.8%: 0.02~0.035%: 0.2~0.5%: 0.03~0.05%: 96~97.5% between it；2) Woolen-making liquid is prepared：Acid Woolen-making liquid or alkaline Woolen-making liquid are put into solution tank, and adjuvant is added in Woolen-making liquid；3) making herbs into wool：By making herbs into wool in feeding solution tank after raw material silicon chip section to be processed, rinsing, and keep 2.7~2.9um of corrosion depth, 26~29 DEG C of making herbs into wool temperature, 15~30s of making herbs into wool time；Finished product；4) finished product is cleaned, dried.The present invention, can make matte after polycrystalline making herbs into wool uniform, and conversion efficiency, which has to improve well, to be improved, while grey piece and reflectivity are reduced.
Description
Technical field
It is specially that a kind of raising solar panel matte is uniform the present invention relates to the manufacture technology field of solar cell
The polycrystalline process for etching of degree.
Background technology
The surface reflectivity of solar cell is to influence one of key factor of photoelectric conversion efficiency of the solar battery.Pass through system
Suede, the surface reflectivity of solar cell can be effectively reduced in solar battery surface texturing, and incident light is multiple in battery surface
Reflection extends light path, adds the absorption to infrared photon, and have more photon to produce photoproduction current-carrying near p-n junction
Son, so as to add the collection probability of photo-generated carrier；The substrate of other same size, the p-n junction area of textured cell is larger,
Short circuit current flow can be improved, efficiency is also correspondingly improved.
But, according to prior art, after making herbs into wool is carried out to polysilicon solar battery slice, and matte have etch pit chi
Very little larger, uniformity is poor, black silk serious, gained silicon chip reflectivity is higher, and then makes the battery of polysilicon solar battery slice
Conversion efficiency is low.
The content of the invention
It is an object of the invention to provide a kind of polycrystalline process for etching for improving the solar panel matte uniformity, to solve
The problem of being proposed in certainly above-mentioned background technology.The polycrystalline process for etching for improving the solar panel matte uniformity can make many
Matte is uniform after brilliant making herbs into wool, and conversion efficiency, which has to improve well, to be improved, while grey piece and reflectivity are reduced.
To achieve the above object, the present invention provides following technical scheme：
A kind of polycrystalline process for etching for improving the solar panel matte uniformity, comprises the following steps：
1) formulation aids：By betaine type amphoteric surfac-tant, phosphate ester salt or carboxylate, stabilizer, citric acid
Ester and deionized water mixing；Weight/mass percentage composition ratio is 0.2~1.8%: 0.02~0.035%: 0.2~0.5% between it:
0.03~0.05%: 96~97.5%；
2) Woolen-making liquid is prepared：Acid Woolen-making liquid or alkaline Woolen-making liquid are put into solution tank, and adjuvant is added to system
In suede liquid；
3) making herbs into wool：By making herbs into wool in feeding solution tank after raw material silicon chip section to be processed, rinsing, and keep corrosion depth
2.7~2.9um, 26~29 DEG C of making herbs into wool temperature, 15~30s of making herbs into wool time；Obtain finished product；
4) finished product is cleaned, dried.
It is preferred that, betaine type amphoteric surfac-tant be α-chain alkyl, N- chain alkyls, N- long chains alkyl,
The one or more of N- long-chains thiocarboxylic acid or sulfobetaine type amphoteric surfactant.
It is preferred that, stabilizer is acid stabilizer or alkaline stabiliser；Wherein acid stabilizer is polyacrylic acid；It is alkaline steady
The mixing for determining agent for diethylenetriamine, triethylene tetramine, TEPA or polyethylene polyamine one of which and benzenediol is molten
Liquid or TMAH.
It is preferred that, alkaline stabiliser can also be ethylenediamine；Benzenediol is catechol.
It is preferred that, the volume ratio of ethylenediamine and catechol is (6~7):1.
It is preferred that, citrate is ATBC or triethyl citrate.
It is preferred that, 3) in making herbs into wool corrosion depth 2.8um, 25.5 DEG C of making herbs into wool temperature, making herbs into wool time 20s.
Compared with prior art, the beneficial effects of the invention are as follows：Betaine type amphoteric surfac-tant is adapted to strong acid
And caustic alkali environment, with citrate complex role, betaine type amphoteric surfac-tant can produce in the middle part of making herbs into wool process
Bubble, citrate improves etching liquid in the mobility of polysilicon surface, is advantageous to obtain the matte of fine uniform, corrodes
Go out pyramidal pattern, form the light trapping of more, evener cause, change the appearance structure of polysilicon surface, reduce polycrystalline
Reflectivity after silicon making herbs into wool, the conversion efficiency made improves 0.012~0.042%；Phosphate ester salt or carboxylate make up glycine betaine
Type amphoteric surfactant does not have anionic nature in alkaline environment；Simultaneous Stabilization agent improves making herbs into wool process reaction speed
Fluctuation, makes etch rate steady, shortens etch period and silicon chip appearance color, reduces the generation of burnt hair piece.
Brief description of the drawings
Fig. 1 is the present invention using polysilicon chip surface electronic microscope scanned photograph made from embodiment 2；
Fig. 2 is conventional polycrystalline silicon chip surface electronic microscope scanned photograph；
Fig. 3 is the conversion efficiency technical indicator figure of polysilicon chip made from 1-3 of the embodiment of the present invention；
Fig. 4 is grey piece scaling trend figure of the present invention using polysilicon chip made from embodiment 2.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Fig. 1-4 are referred to, the present invention provides a kind of technical scheme：
Embodiment 1
A kind of polycrystalline process for etching for improving the solar panel matte uniformity, comprises the following steps：
1) formulation aids：By betaine type amphoteric surfac-tant, phosphate ester salt or carboxylate, stabilizer, citric acid
Ester and deionized water mixing；Weight/mass percentage composition ratio is 0.5%: 0.028%: 0.3%: 0.035%: 96.5% between it；
2) Woolen-making liquid is prepared：Acid Woolen-making liquid or alkaline Woolen-making liquid are put into solution tank, and adjuvant is added to system
In suede liquid；
3) making herbs into wool：By making herbs into wool in feeding solution tank after raw material silicon chip section to be processed, rinsing, and keep corrosion depth
2.7um, 26 DEG C of making herbs into wool temperature, making herbs into wool time 16s；Obtain finished product；
4) finished product is cleaned, dried.
Betaine type amphoteric surfac-tant is α-chain alkyl, N- chain alkyls, N- long chains alkyl, N- long-chains
The one or more of thiocarboxylic acid or sulfobetaine type amphoteric surfactant；
Stabilizer is acid stabilizer or alkaline stabiliser；Wherein acid stabilizer is polyacrylic acid；Alkaline stabiliser is
Diethylenetriamine, triethylene tetramine, TEPA or polyethylene polyamine one of which and the mixed solution of benzenediol or four
Ammonium hydroxide；
Alkaline stabiliser can also be ethylenediamine；Benzenediol is catechol；
The volume ratio of ethylenediamine and catechol is 6:1；
Citrate is ATBC or triethyl citrate.
Embodiment 2
A kind of polycrystalline process for etching for improving the solar panel matte uniformity, comprises the following steps：
1) formulation aids：By betaine type amphoteric surfac-tant, phosphate ester salt or carboxylate, stabilizer, citric acid
Ester and deionized water mixing；Weight/mass percentage composition ratio is 0.9%: 0.031%: 0.3%: 0.035%: 96.8% between it；
2) Woolen-making liquid is prepared：Acid Woolen-making liquid or alkaline Woolen-making liquid are put into solution tank, and adjuvant is added to system
In suede liquid；
3) making herbs into wool：By making herbs into wool in feeding solution tank after raw material silicon chip section to be processed, rinsing, and keep corrosion depth
2.8um, 25.5 DEG C of making herbs into wool temperature, making herbs into wool time 20s；Obtain finished product；
4) finished product is cleaned, dried.
Betaine type amphoteric surfac-tant is α-chain alkyl, N- chain alkyls, N- long chains alkyl, N- long-chains
The one or more of thiocarboxylic acid or sulfobetaine type amphoteric surfactant；
Stabilizer is acid stabilizer or alkaline stabiliser；Wherein acid stabilizer is polyacrylic acid；Alkaline stabiliser is
Diethylenetriamine, triethylene tetramine, TEPA or polyethylene polyamine one of which and the mixed solution of benzenediol or four
Ammonium hydroxide；
Alkaline stabiliser can also be ethylenediamine；Benzenediol is catechol；
The volume ratio of ethylenediamine and catechol is 6.5:1；
Citrate is ATBC or triethyl citrate.
Embodiment 3
A kind of polycrystalline process for etching for improving the solar panel matte uniformity, comprises the following steps：
1) formulation aids：By betaine type amphoteric surfac-tant, phosphate ester salt or carboxylate, stabilizer, citric acid
Ester and deionized water mixing；Weight/mass percentage composition ratio is 1.8%: 0.035%: 0.5%: 0.05%: 97.5% between it；
2) Woolen-making liquid is prepared：Acid Woolen-making liquid or alkaline Woolen-making liquid are put into solution tank, and adjuvant is added to system
In suede liquid；
3) making herbs into wool：By making herbs into wool in feeding solution tank after raw material silicon chip section to be processed, rinsing, and keep corrosion depth
2.9um, 29 DEG C of making herbs into wool temperature, making herbs into wool time 30s；Obtain finished product；
4) finished product is cleaned, dried.
Betaine type amphoteric surfac-tant is α-chain alkyl, N- chain alkyls, N- long chains alkyl, N- long-chains
The one or more of thiocarboxylic acid or sulfobetaine type amphoteric surfactant；
Stabilizer is acid stabilizer or alkaline stabiliser；Wherein acid stabilizer is polyacrylic acid；Alkaline stabiliser is
Diethylenetriamine, triethylene tetramine, TEPA or polyethylene polyamine one of which and the mixed solution of benzenediol or four
Ammonium hydroxide；
Alkaline stabiliser can also be ethylenediamine；Benzenediol is catechol；
The volume ratio of ethylenediamine and catechol is 7:1；
Citrate is ATBC or triethyl citrate.
Wherein, betaine type amphoteric surfac-tant is that α-long-chain alkyl lycine type amphoteric surface lives in embodiment 1~3
Property the alpha-brominated aliphatic acid of agent and trimethylamine quaterisation be made；N- long-chain alkyl lycine types amphoteric surfactant is to adopt
It is made with the quaterisation of aliphatic tertiary amine；N- long chain alkyl betaine-type amphoteric surfactantes are by low molecule amount
The primary ammonium of type two of tert- and derivative of fatty acid condensation reaction, then be made with sodium chloroacetate reaction；N- long-chain thiocarboxylic acid betaine types
Amphoteric surfactant is reacted by the alkylthio propylamine of α mono- and formaldehyde, and adding sodium chloroacetate, easily reaction is made；Sulfobetaines
Alkaline amphoteric surfactant is that chain alkyl dimethylammonium and the reaction of bromo sodium sulfonate are made.
Betaine type amphoteric surfac-tant is adapted to strong acid and caustic alkali environment, expands the scope of application, with lemon
Acid esters complex role, betaine type amphoteric surfac-tant can produce bubble in the middle part of making herbs into wool process, and citrate, which is improved, to be carved
Liquid is lost in the mobility of polysilicon surface, is advantageous to obtain the matte of fine uniform, corrodes and pyramidal pattern, is formed
The light trapping of more, evener cause, changes the appearance structure of polysilicon surface, reduces the reflectivity after polysilicon making herbs into wool, makes
Conversion efficiency improve 0.031~0.042%；And phosphate ester salt or carboxylate make up betaine type amphoteric surfac-tant and existed
Do not have anionic nature in alkaline environment；Simultaneous Stabilization agent improves making herbs into wool process reaction velocity perturbation, makes etch rate
Steadily, shorten etch period and make silicon chip appearance color, reduce the generation of burnt hair piece.
Using the present invention to polysilicon making herbs into wool, electrical property technical indicator is referring to table 1：
| Yield/piece | Inefficacy ratio | Uoc | Isc | FF | Rs | Rsh | IRev2 | |
| Embodiment 1 | 535955 | 0.33% | 0.6343 | 8.739 | 80.11 | 0.00141 | 1280.3 | 0.053 |
| Embodiment 2 | 535955 | 0.318% | 0.6353 | 8.756 | 80.25 | 0.00138 | 1298.83 | 0.048 |
| Embodiment 3 | 535955 | 0.343% | 0.6335 | 8.742 | 80.17 | 0.00140 | 1284.83 | 0.051 |
| Control group 1 | 535955 | 0.542% | 0.6327 | 8.740 | 80.04 | 0.00149 | 1264.83 | 0.054 |
Table 1
Wherein Eta represents that etching efficiency, Uoc represent that open-circuit voltage, Isc represent that short circuit current flow, FF represent fill factor, curve factor, Rs
Represent that series resistance, Rsh represent that parallel resistance, IRev2 represent dark current；To 535955 polysilicon detection electrical performance indexes,
And the control group 1 of conventional making herbs into wool is provided accurately contrasted, it can be seen that the present invention makes polysilicon open circuit electricity to polysilicon making herbs into wool
Pressure, fill factor, curve factor and parallel resistance increase, and inefficacy ratio, series resistance and dark current have declined, hence it is evident that good
In control group；
Conversion efficiency technical indicator is referring to Fig. 3：
Eta refers to the conversion capability that cell piece converts light energy into electric energy, i.e.,：Conversion efficiency；By being made to embodiment 1~3
(from left to right), dotted line frame represents the conversion efficiency of control group 1 to figure, and solid box represents the conversion efficiency of embodiment 1~3, it can be seen that
The present invention makes its improved efficiency 0.031~0.042%, is optimal especially with embodiment 2 to polysilicon making herbs into wool；
Grey piece scaling trend figure is referring to Fig. 4：
Using embodiment 2, continuous 6 months, science record is carried out to the grey piece that 535955 polysilicons of production are caused, and carry
Contrasted for control group 1：Dotted line frame represents the grey piece scaling trend of control group 1, and solid box represents to implement 2 grey piece scaling trends；
It can be seen that being decreased obviously about 1.6% or so using the polycrystalline silicon ash piece ratio of embodiment 2；
Reflectivity is referring to table 2：
Table 2
1000 are selected at random by producing 535955 polysilicons to embodiment 1~3 and control group 1, carry out reflectivity
Detection, it can be seen that by polysilicon making herbs into wool back reflection rate (average value) reduction of the present embodiment 1.38% or so, and grey piece
Quantity has also declined, and Reducing thickness is minimum in 2.8 (um) reflectivity；
Reducing thickness size is influenceed referring to table 3 on reflectivity：
Table 3
Control group 2~5：As different from Example 2：Step 3 in control group 2~5) corrosion depth difference is kept in making herbs into wool
For 2.Gum, 2.7um, 2.9um and 3.0um, 535955 polysilicons of production are random simultaneously, and every group is selected 1000 at random；It is right
Control Reducing thickness at 1000 of 2.6um, 1000 of 2.7um, 1000 of 2.8um, 1000 of 2.9um according to group 2 and
The reflectivity (average value) that 1000 of 3.0um draw it, it can be seen that Reducing thickness is in 2.7~2.9um reflectivity and is in most
It is good, once less than 2.6um, higher than 2.9um, reflectivity will become big；
Lack the influence of betaine type amphoteric surfac-tant, citrate and stabilizer to technique and be shown in Table 4：
| Amount detection | Eta | Average reflectance | Grey piece | |
| Embodiment 2 | 1000 | 18.30% | 17.81% | 1 |
| Control group 6 | 1000 | 18.258% | 18.53% | 14 |
Table 4
Control group 6：Step 1 as different from Example 2) remove betaine type amphoteric surfac-tant in formulation aids
And citrate, 535955 polysilicons of production are random simultaneously, and every group is selected 1000 at random, it can be seen that control group 6
Conversion efficiency be decreased obviously, while reflectivity, grey piece substantially increase；Illustrate betaine type amphoteric surfac-tant and citric acid
Ester is compounded, and matte after polycrystalline making herbs into wool can be made uniform, and then makes conversion efficiency have raising well to improve, while grey piece and reflectivity
Reduced.
Although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of changes, modification can be carried out to these embodiments, replace without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (7)
1. a kind of polycrystalline process for etching for improving the solar panel matte uniformity, it is characterised in that comprise the following steps：
1) formulation aids：By betaine type amphoteric surfac-tant, phosphate ester salt or carboxylate, stabilizer, citrate and
Deionized water is mixed；Between it weight/mass percentage composition ratio be 0.2~1.8%: 0.02~0.035%: 0.2~0.5%: 0.03~
0.05%: 96~97.5%；
2) Woolen-making liquid is prepared：Acid Woolen-making liquid or alkaline Woolen-making liquid are put into solution tank, and adjuvant is added to Woolen-making liquid
In；
3) making herbs into wool：Will making herbs into wool in feeding solution tank after raw material silicon chip section to be processed, rinsing, and keep corrosion depth 2.7~
2.9um, 26~29 DEG C of making herbs into wool temperature, 15~30s of making herbs into wool time；Obtain finished product；
4) finished product is cleaned, dried.
2. a kind of polycrystalline process for etching for improving the solar panel matte uniformity according to claim 1, its feature
It is：Betaine type amphoteric surfac-tant is that α-chain alkyl, N- chain alkyls, N- long chains alkyl, N- long-chains are thio
The one or more of carboxylic acid or sulfobetaine type amphoteric surfactant.
3. a kind of polycrystalline process for etching for improving the solar panel matte uniformity according to claim 1, its feature
It is：Stabilizer is acid stabilizer or alkaline stabiliser；Wherein acid stabilizer is polyacrylic acid；Alkaline stabiliser is diethyl
The mixed solution or tetramethyl of alkene triamine, triethylene tetramine, TEPA or polyethylene polyamine one of which and benzenediol
Ammonium hydroxide.
4. a kind of polycrystalline process for etching of raising solar panel matte uniformity according to claim 1 or 3, it is special
Levy and be：Alkaline stabiliser can also be ethylenediamine；Benzenediol is catechol.
5. a kind of polycrystalline process for etching for improving the solar panel matte uniformity according to claim 4, its feature
It is：The volume ratio of ethylenediamine and catechol is (6~7):1.
6. a kind of polycrystalline process for etching for improving the solar panel matte uniformity according to claim 4, its feature
It is：Citrate is ATBC or triethyl citrate.
7. a kind of polycrystalline process for etching for improving the solar panel matte uniformity according to claim 1, its feature
It is：3) making herbs into wool corrosion depth 2.8um, 25.5 DEG C of making herbs into wool temperature, making herbs into wool time 20s in.
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