CN107046006A - Flexible base board structure and forming method thereof, flexible electronic device - Google Patents
Flexible base board structure and forming method thereof, flexible electronic device Download PDFInfo
- Publication number
- CN107046006A CN107046006A CN201610084031.9A CN201610084031A CN107046006A CN 107046006 A CN107046006 A CN 107046006A CN 201610084031 A CN201610084031 A CN 201610084031A CN 107046006 A CN107046006 A CN 107046006A
- Authority
- CN
- China
- Prior art keywords
- barrier layer
- base board
- polymer
- board structure
- flexible base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 230000004888 barrier function Effects 0.000 claims abstract description 125
- 239000000758 substrate Substances 0.000 claims abstract description 48
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000001301 oxygen Substances 0.000 claims abstract description 31
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 31
- 229920000642 polymer Polymers 0.000 claims description 71
- 239000000463 material Substances 0.000 claims description 61
- 239000000178 monomer Substances 0.000 claims description 22
- -1 polyethylene terephthalate Polymers 0.000 claims description 20
- 239000002105 nanoparticle Substances 0.000 claims description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 10
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 9
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 9
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 9
- 229920000647 polyepoxide Polymers 0.000 claims description 9
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 150000002148 esters Chemical class 0.000 claims description 7
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 claims description 7
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 239000004408 titanium dioxide Substances 0.000 claims description 6
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229920000570 polyether Polymers 0.000 claims description 5
- 229920005862 polyol Polymers 0.000 claims description 5
- 150000003077 polyols Chemical class 0.000 claims description 5
- 239000004814 polyurethane Substances 0.000 claims description 5
- 229920005749 polyurethane resin Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 239000004698 Polyethylene Substances 0.000 claims description 4
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 claims description 4
- IAXXETNIOYFMLW-COPLHBTASA-N [(1s,3s,4s)-4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl] 2-methylprop-2-enoate Chemical compound C1C[C@]2(C)[C@@H](OC(=O)C(=C)C)C[C@H]1C2(C)C IAXXETNIOYFMLW-COPLHBTASA-N 0.000 claims description 4
- 125000005234 alkyl aluminium group Chemical group 0.000 claims description 4
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 4
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 claims description 4
- 229940090961 chromium dioxide Drugs 0.000 claims description 4
- IAQWMWUKBQPOIY-UHFFFAOYSA-N chromium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Cr+4] IAQWMWUKBQPOIY-UHFFFAOYSA-N 0.000 claims description 4
- AYTAKQFHWFYBMA-UHFFFAOYSA-N chromium(IV) oxide Inorganic materials O=[Cr]=O AYTAKQFHWFYBMA-UHFFFAOYSA-N 0.000 claims description 4
- 125000004386 diacrylate group Chemical group 0.000 claims description 4
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 claims description 4
- 229940119545 isobornyl methacrylate Drugs 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- 238000006116 polymerization reaction Methods 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 239000004425 Makrolon Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 239000004743 Polypropylene Substances 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 3
- 238000004132 cross linking Methods 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229920000098 polyolefin Polymers 0.000 claims description 3
- 229920001155 polypropylene Polymers 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 2
- 239000004695 Polyether sulfone Substances 0.000 claims description 2
- 229910052810 boron oxide Inorganic materials 0.000 claims description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000292 calcium oxide Substances 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000013007 heat curing Methods 0.000 claims description 2
- 229920000728 polyester Polymers 0.000 claims description 2
- 229920006267 polyester film Polymers 0.000 claims description 2
- 229920006393 polyether sulfone Polymers 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- PCLLJCFJFOBGDE-UHFFFAOYSA-N (5-bromo-2-chlorophenyl)methanamine Chemical compound NCC1=CC(Br)=CC=C1Cl PCLLJCFJFOBGDE-UHFFFAOYSA-N 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229920001228 polyisocyanate Polymers 0.000 claims 1
- 239000005056 polyisocyanate Substances 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 230000008595 infiltration Effects 0.000 abstract description 10
- 238000001764 infiltration Methods 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 160
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 8
- 239000002253 acid Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 5
- 238000002207 thermal evaporation Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 2
- INQDDHNZXOAFFD-UHFFFAOYSA-N 2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOC(=O)C=C INQDDHNZXOAFFD-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- ORLQHILJRHBSAY-UHFFFAOYSA-N [1-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1(CO)CCCCC1 ORLQHILJRHBSAY-UHFFFAOYSA-N 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000007751 thermal spraying Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 1
- ASULPTPKYZUPFI-UHFFFAOYSA-N (2-nitrophenyl) prop-2-enoate Chemical compound [O-][N+](=O)C1=CC=CC=C1OC(=O)C=C ASULPTPKYZUPFI-UHFFFAOYSA-N 0.000 description 1
- ZDQNWDNMNKSMHI-UHFFFAOYSA-N 1-[2-(2-prop-2-enoyloxypropoxy)propoxy]propan-2-yl prop-2-enoate Chemical compound C=CC(=O)OC(C)COC(C)COCC(C)OC(=O)C=C ZDQNWDNMNKSMHI-UHFFFAOYSA-N 0.000 description 1
- IGGDKDTUCAWDAN-UHFFFAOYSA-N 1-vinylnaphthalene Chemical compound C1=CC=C2C(C=C)=CC=CC2=C1 IGGDKDTUCAWDAN-UHFFFAOYSA-N 0.000 description 1
- HWSSEYVMGDIFMH-UHFFFAOYSA-N 2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOCCOC(=O)C(C)=C HWSSEYVMGDIFMH-UHFFFAOYSA-N 0.000 description 1
- 125000001731 2-cyanoethyl group Chemical group [H]C([H])(*)C([H])([H])C#N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- CEXQWAAGPPNOQF-UHFFFAOYSA-N 2-phenoxyethyl 2-methylprop-2-enoate Chemical class CC(=C)C(=O)OCCOC1=CC=CC=C1 CEXQWAAGPPNOQF-UHFFFAOYSA-N 0.000 description 1
- YYPNJNDODFVZLE-UHFFFAOYSA-N 3-methylbut-2-enoic acid Chemical compound CC(C)=CC(O)=O YYPNJNDODFVZLE-UHFFFAOYSA-N 0.000 description 1
- LVGFPWDANALGOY-UHFFFAOYSA-N 8-methylnonyl prop-2-enoate Chemical compound CC(C)CCCCCCCOC(=O)C=C LVGFPWDANALGOY-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- RGSZMJPJNOXQOK-UHFFFAOYSA-N C(C=C)(=O)O.C(C=C)(=O)O.CO.CO.CCCCCC Chemical compound C(C=C)(=O)O.C(C=C)(=O)O.CO.CO.CCCCCC RGSZMJPJNOXQOK-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229920005479 Lucite® Polymers 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical group CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical class CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 125000004494 ethyl ester group Chemical group 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- YDKNBNOOCSNPNS-UHFFFAOYSA-N methyl 1,3-benzoxazole-2-carboxylate Chemical class C1=CC=C2OC(C(=O)OC)=NC2=C1 YDKNBNOOCSNPNS-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- HMZGPNHSPWNGEP-UHFFFAOYSA-N octadecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCCCCCCOC(=O)C(C)=C HMZGPNHSPWNGEP-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical group 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- MOWNZPNSYMGTMD-UHFFFAOYSA-N oxidoboron Chemical compound O=[B] MOWNZPNSYMGTMD-UHFFFAOYSA-N 0.000 description 1
- YNXCGLKMOXLBOD-UHFFFAOYSA-N oxolan-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CCCO1 YNXCGLKMOXLBOD-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000000538 pentafluorophenyl group Chemical group FC1=C(F)C(F)=C(*)C(F)=C1F 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/481—Insulating layers on insulating parts, with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
Abstract
The invention provides a kind of flexible base board structure and forming method thereof, and a kind of flexible electronic device, wherein, the flexible base board structure includes：Flexible substrate；Planarization layer in the flexible substrate, surface of the planarization layer away from the flexible substrate side is flat；Barrier layer on the planarization layer, the barrier layer is used for the infiltration for stopping oxygen and aqueous vapor.The flexible base board structure of the present invention can effectively stop the infiltration of oxygen and aqueous vapor, improve reliability and the life-span of the electronic device being formed thereon.
Description
Technical field
The present invention relates to electronic device manufacturing technology field, more particularly to a kind of flexible base board structure and its shape
Into method, and a kind of flexible electronic device.
Background technology
Flexible electronic and flexible display technologies are the field of electronic device manufacture in recent years more active research sides
One of to, while being also one of important directions of Electronic Development of Information Industry.With lightweight, it is flexible,
The flexible electronic product of foldable or even rollable characteristic has been widely studied or even manufactured, for example,
Flexible electronic circuit, flexible electrochomeric films, flexible photovoltaic devices, flexible intelligent label or identification mark
Label, flexible battery, flexible smart card, Flexible light-emitting diodes and organic LED display panel
Deng.
But, life-span of the flexible electronic product of prior art is shorter, reliability is relatively low.
The content of the invention
The problem of present invention is solved be the flexible electronic product of prior art life-span is shorter, reliability is relatively low.
To solve the above problems, the embodiments of the invention provide a kind of flexible base board structure, the flexible base
Hardened structure includes：Flexible substrate；Planarization layer in the flexible substrate, the planarization layer is remote
Surface from the flexible substrate side is flat；Barrier layer on the planarization layer, the stop
Layer is used for the infiltration for stopping oxygen and aqueous vapor.
Alternatively, the barrier layer includes inorganic barrier layer and polymer barrier layer.
Alternatively, the polymer barrier layer is located on the inorganic barrier layer.
Alternatively, the inorganic barrier layer is located on the polymer barrier layer.
Alternatively, the quantity of the inorganic barrier layer and the polymer barrier layer is the multiple to be multiple
Inorganic barrier layer and the multiple polymer barrier layer are alternately stacked on the planarization layer.
Alternatively, the material of the planarization layer includes polymethyl methacrylate, cyclohexanedimethanol two
Acrylate polymer, ring-type diacrylate ester polymer, isobornyl methacrylate polymer,
Three isocyanurate polymers, triacrylate polymer, epoxide resin polymer, silicon resin copolymer
With the one or more in polyether polyols.
Alternatively, the material of the inorganic barrier layer includes aluminum oxide, silica, titanium dioxide, oxygen
Change one kind in zirconium, zinc oxide, vanadium dioxide, chromium dioxide, manganese dioxide, silicon nitride and carborundum
Or it is a variety of.
Alternatively, the material of the polymer barrier layer includes Parylene, polyurethane and epoxy resin
In one or more.
Alternatively, the material of the flexible substrate includes ethylene-tetrafluoroethylene copolymer, poly terephthalic acid
It is ethyl ester, polyethylene, makrolon, polyolefin, polypropylene, polyether sulfone, poly- naphthalene, polyimides, poly-
One or more in the polyester films such as ester, polymethyl methacrylate, stainless steel and aluminium.
Alternatively, the nano particle for absorbing oxygen and aqueous vapor is dispersed with the flexible substrate.
Alternatively, the material of the nano particle include calcium oxide, barium monoxide, boron oxide, magnesia,
One or more in alkyl aluminum and aluminum alkoxide.
Accordingly, the embodiment of the present invention additionally provides a kind of forming method of flexible base board structure, the side
Method includes：Flexible substrate is provided；Planarization layer is formed in the flexible substrate, the planarization layer is remote
Surface from the flexible substrate side is flat；Barrier layer, the stop are formed on the planarization layer
Layer is used for the infiltration for stopping oxygen and aqueous vapor.
Alternatively, the material of the planarization layer includes polymethyl methacrylate, cyclohexanedimethanol two
Acrylate polymer, ring-type diacrylate ester polymer, isobornyl methacrylate polymer,
Three isocyanurate polymers, triacrylate polymer, epoxide resin polymer, silicon resin copolymer
With the one or more in polyether polyols, forming the planarization layer includes：In the flexible substrate
Upper coating flatization layer monomer material；Ultraviolet light cross-linking or heat are carried out to the planarization layer monomer material
Curing process, forms polymeric planarizing layer corresponding with the monomer material.
Alternatively, forming the barrier layer includes forming inorganic barrier layer and forms polymer barrier layer.
Alternatively, the material of the inorganic barrier layer includes aluminum oxide, silica, titanium dioxide, oxygen
Change one kind in zirconium, zinc oxide, vanadium dioxide, chromium dioxide, manganese dioxide, silicon nitride and carborundum
Or it is a variety of, the technique for forming the inorganic barrier layer is ald, physical vapour deposition (PVD) or chemistry
Vapour deposition.
Alternatively, the material of the polymer barrier layer includes Parylene, polyurethane and epoxy resin
In one or more, forming the polymer barrier layer includes：Barrier-coating monomer material；Make institute
State barrier monomer material and produce thermic or photo polymerization reaction, form polymer barrier layer.
Further, the embodiment of the present invention additionally provides a kind of flexible electronic device, the flexible electronic device
Part includes above-mentioned flexible base board structure, and the device layer in the flexible base board structure.
Compared with prior art, the technical scheme of the embodiment of the present invention has advantages below：
The flexible base board structure of the embodiment of the present invention includes planarization layer and on the planarization layer
Barrier layer, the planarization layer can fill the hole and slight crack on the flexible substrate surface, so that surface
It is smooth, the sophisticated pattern on flexible substrate surface will not be transferred to the barrier layer being formed thereon；The resistance
Barrier compact structure, oxygen and the aqueous vapor infiltration of flexible substrate or the external world are come from for stopping, so that
The device layer being subsequently formed thereon is protected, reliability and the life-span of electronic device is improved.
Further, the barrier layer of the embodiment of the present invention can also be double-decker and sandwich construction, including
Inorganic barrier layer and polymer barrier layer.The inorganic barrier layer compact structure, is the master of oxygen and aqueous vapor
Want barrier layer；The polymer barrier layer can block pin hole that may be present in the inorganic barrier layer and lack
Fall into, and further stop the infiltration of oxygen and aqueous vapor.
Accordingly, the forming method and flexible electronic device of the flexible base board structure of the embodiment of the present invention also may be used
To stop the infiltration of aqueous vapor and oxygen, reliability and the life-span of electronic device are improved.
Brief description of the drawings
Fig. 1 shows the schematic diagram of the flexible base board structure of one embodiment of the invention；
Fig. 2 shows the schematic diagram of the flexible base board structure of another embodiment of the present invention；
Fig. 3 shows the schematic diagram of the flexible base board structure of another embodiment of the present invention；
Fig. 4 shows the schematic diagram of the flexible base board structure of another embodiment of the present invention.
Embodiment
In flexible electronic product, flexible base board as flexible electronic product physical support and protection component,
The life and reliability of flexible electronic product is all had a major impact.But flexible base board is generally by polymer
Material is made, and its surface is not smooth enough, and inside has bubble or Micro-v oid；Subsequently in the flexibility
Formed on substrate after device layer, the out-of-flatness surface of flexible base board easily introduces various tip knots in device layer
Structure, causes point discharge, influences device lifetime；Further, the bubble in flexible base board can discharge oxygen
Gas or aqueous vapor, extraneous oxygen and aqueous vapor may also reach flexible base board by the hole in flexible base board
On device layer, oxygen and aqueous vapor easily cause the variation of device layer material, so as to influence the reliable of device
Property and life-span.Therefore, if be improved to flexible base board, its surfacing is made, and oxygen can be stopped
Gas and aqueous vapor penetrate into device layer, then can improve the electronic product being formed thereon reliability and
Life-span.
Therefore, the embodiments of the invention provide a kind of flexible base board structure, the flexible base board structural plan
Planarization, and oxygen and the aqueous vapor infiltration for coming from flexible substrate or the external world can be stopped, so as to protect
Device layer thereon is subsequently formed, reliability and the life-span of electronic device is improved.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings
The specific embodiment of the present invention is described in detail.
It should be noted that the purpose for providing these accompanying drawings contributes to understand embodiments of the invention, and
It should not be construed as the improperly limitation to the present invention.For the sake of becoming apparent from, size is not pressed shown in figure
Ratio is drawn, and may be made and be amplified, reduces or other changes.
With reference to Fig. 1, Fig. 1 shows the schematic diagram of the flexible base board structure of one embodiment of the invention, described soft
Property board structure include flexible substrate 100, the planarization layer 110 in the flexible substrate 100 and position
Barrier layer 120 on the planarization layer 110.
The flexible substrate 100 is the physical support for being subsequently formed thin-film material thereon, due to its tool
There is flexible or folding feature, be particularly suitable for use in volume to volume (R2R) manufacturing process of low cost.
In certain embodiments, the flexible substrate 100 can be made up of polymeric material, for example, described soft
Property substrate 100 material include ethylene-tetrafluoroethylene copolymer (ETFE), polyethylene terephthalate
(PET), polyethylene (PE), makrolon, polyolefin, polypropylene, polyether sulfone (PES), poly- naphthalene
(PEN), the one or more in polyimides, polyester and polymethyl methacrylate.In some implementations
In example, the flexible substrate 100 can also be metal foil, for example, stainless steel or aluminium.Certainly, exist
In other embodiment, the flexible substrate 100 can also include metal foil and polymeric material simultaneously.
Either polymeric material or metal foil, its surface may be all not smooth enough, with various tips
Structure, if directly forming electronic device layer thereon, the tip will influence device performance；In addition,
It is complicated because its molecular weight is larger for polymeric material, formed unavoidably inside it with surface
Bubble or hole.When the bubble discharge oxygen either aqueous vapor infiltrate into device layer or the external world
Oxygen or aqueous vapor infiltrate into device layer by described hole, can all influence the performance of device.Therefore, such as Fig. 1
Shown, the flexible base board structure of the embodiment of the present invention yet forms both planarization layer 110 in flexible substrate 100
For making the surface planarisation of the flexible substrate 100, so that solve the above problems, the planarization layer
110 can fill the hole on the surface of flexible substrate 100, and the planarization layer 110 is away from described soft
The surface of the property side of substrate 100, that is, it is formed on the surface flat-satin on barrier layer 120,
The cutting-edge structure on the surface of flexible substrate 100 will not be delivered to barrier layer or the device layer on upper strata.
In certain embodiments, the material of the planarization layer 110 includes polymethyl methacrylate, ring
Hexane Dimethanol Diacrylate polymer, ring-type diacrylate ester polymer, isobornyl metering system
Acid ester polymer, three (2- hydroxyethyls) isocyanurate polymers, triacrylate polymer, epoxy
One or more in resinous polymer, silicon resin copolymer and polyether polyols.But the present invention's is flat
Smoothization layer 110 is not limited to above-mentioned material, can fill the surface of flexible substrate 100 hole and into
The flat other materials in surface can also be used for forming the planarization layer 110 after shape.
In certain embodiments, fluid evaporation, vacuum thermal evaporation, spraying or the side of spin coating can be used
Method forms the planarization layer.Specifically, in one embodiment, the side of the planarization layer 110 is formed
Method includes：First, planarization layer monomer material is applied to the flexibility by the way of vacuum thermal evaporation
The upper surface of substrate 100, because the molecular weight of monomer material is smaller, can easily be filled described soft
Property the surface of substrate 100 hole and slight crack, and in a heated condition, the good fluidity of monomer material holds
Easily form flawless smooth surface；Then, ultraviolet light cross-linking is carried out to the planarization layer monomer material
Or heat cure processing, the planarization layer 110 corresponding with the monomer material is formed, so that described flat
The also smooth zero defect in surface of smoothization layer 110.Specifically, in one embodiment, using methyl methacrylate
Ester monomer material, it has preferable mobility on the surface of flexible substrate 100, can be easily
The hole and slight crack on the surface of filling flexible substrate 100, poly- methyl is formed by heating or the irradiation of ultraviolet light
The planarization layer 110 of methyl acrylate (lucite, PMMA), so as to repair flexible substrate 100
The defect on surface so that the smooth zero defect in the surface of planarization layer 110.
In certain embodiments, the planarization layer 110 is inner can also be dispersed with nano-particle material, institute
Oxygen and aqueous vapor can be absorbed by stating nano-particle material so that the planarization layer 110 not only has flat
Change and filling function, can also absorb oxygen and aqueous vapor simultaneously.Specifically, in certain embodiments, institute
State nano particle material be metal oxide, for example, the nano particle can for calcium oxide (CaO),
One or more in barium monoxide (BaO), boron oxide (BO), magnesia (MgO) nano particle；
In certain embodiments, the material of the nano particle is organo-metallic compound, for example, the nanometer
Can be in alkyl aluminum (alkyl-aluminum) and aluminum alkoxide (alkoxy-aluminum) nano particle
One or more；In further embodiments, the nano particle can also include metal oxidation simultaneously
Thing nano particle and organo metallic oxide nano particle.Specifically, in one embodiment, it is described flat
Change and magnesia (MgO) nano particle is included in layer 110, magnesia can form solid after absorbing water
Matter Mg (OH)2, can play a part of hindering penetration by water planarization layer 110.
With continued reference to Fig. 1, also there is barrier layer 120 on the planarization layer 110 of the embodiment of the present invention, it is described
The material structure on barrier layer 120 is fine and close, property is stable, for stopping oxygen, aqueous vapor and other are harmful
Gas infiltrates into the device layer being formed thereon.Specifically, in certain embodiments, using atomic layer deposition
Product technique forms the barrier layer 120 of the inorganic material of densification, such as using ald aluminum oxide film,
The covering performance of atom layer deposition process is good, and thickness can be controlled accurately, and alumina material structure right and wrong
Chang Zhimi's, oxygen and aqueous vapor can not all be readily passed through.In an other embodiment, it would however also be possible to employ have
Machine polymer forms the barrier layer 120 of the polymeric material of densification, such as using the molecule aggregation of paraxylene two
Thing, by vacuum thermal evaporation (90~170 DEG C), again by (600~720 DEG C) formation pair of high temperature pyrolysis
Parylene monomer structure, it is final in the surface aggregate of low temperature planarization layer 110 into Parylene
(Poly-p-xylene), synthetic fibre (Parylene) in trade name handkerchief, it can fine and close covering planarization layer 110
The 0.1-100 micron parylene film coatings that under surface, this vacuum state prepared by room temperature deposition, its
Thickness is uniform, it is fine and close it is pin-free, transparent it is unstressed, have excellent waterproof and dampproof function, it also has extremely
Excellent electrical insulation capability, heat resistance, weatherability and chemical stability.
The barrier layer 120 can be single layer structure or sandwich construction.In certain embodiments, such as Fig. 1
Shown, the barrier layer 120 is single layer structure, and the barrier layer can be the polymeric material of compact structure
Expect the polymer barrier layer formed, or be the inorganic barrier layer of the inorganic material formation of compact structure.
In certain embodiments, as shown in Figures 2 and 3, the barrier layer 120 is double-decker, institute
Stating barrier layer 120 includes inorganic barrier layer 1201 and polymer barrier layer 1202, the inorganic barrier layer
1201 be oxygen and the head dam of aqueous vapor, and the polymer barrier layer 1202 can block described inorganic
Needle pore defect that may be present in barrier layer 1201, and further prevent the infiltration of oxygen and aqueous vapor.One
In a little embodiments, as shown in Fig. 2 the inorganic barrier layer 1201 is located on the planarization layer 110,
The inorganic barrier layer 1202 is located on the inorganic barrier layer 1201.In further embodiments, institute
Stating the relative position of inorganic barrier layer 1201 and the polymer barrier layer 1202 can change, such as Fig. 3
It is shown, or the polymer barrier layer 1202 is located on the planarization layer 110, described inorganic
Barrier layer 1201 is located on the polymer barrier layer 1202.
In further embodiments, in order to further improve stop of the barrier layer 120 to oxygen and aqueous vapor
Effect, the barrier layer 120 can also be the sandwich construction more than two layers.With reference to Fig. 4, it illustrates one
The structural representation on the barrier layer 120 of sandwich construction is planted, the barrier layer 120 includes multiple inorganic resistances
Barrier 1201 and multiple polymer barrier layers 1202.The multiple inorganic barrier layer 1201 and the multiple
Polymer barrier layer 1202 is alternately stacked on the planarization layer 110.The multiple inorganic barrier layer
1201 and the quantity of multiple polymer barrier layers 1202 be based on its own material property and thickness and need
The barrier properties requirement reached is determined.In Fig. 4, the bottom and top on the barrier layer 120
Respectively described inorganic barrier layer 1201 and the polymer barrier layer 1202, in some other embodiment,
The bottom and top on the barrier layer 120 can also be respectively the polymer barrier layer 1202 and institute
Inorganic barrier layer 1201 is stated, is either the inorganic barrier layer 1201 or is polymer resistance
Barrier 1202.
In the various embodiments described above, the material of the inorganic barrier layer 1201 include aluminum oxide, silica,
Titanium dioxide, zirconium oxide, zinc oxide, vanadium dioxide, chromium dioxide, manganese dioxide, silicon nitride and carbon
One or more in SiClx, formed the inorganic barrier layer 1201 technique can for ald,
Physical vapour deposition (PVD) or chemical vapor deposition.For example, in a specific embodiment, using atomic layer
Depositing operation formation alumina layer is used as the inorganic barrier layer 1201, the spreadability of atom layer deposition process
Can be good, thickness control is accurate, and alumina material compact structure, oxygen and aqueous vapor all cannot pass through.
The material of the polymer barrier layer 1202 include Parylene (C, N, D, AF-4, SF,
HT), the one or more in polyurethane and epoxy resin.Form the work of the polymer barrier layer 1202
Skill can be fluid evaporation, vacuum thermal evaporation, spraying or spin coating.For example, in one embodiment, shape
Include into the polymer barrier layer 1202：Using the technique barrier-coating monomer material of vacuum thermal evaporation；
The barrier monomer material is produced thermic or photo polymerization reaction, form polymer barrier layer.Wherein
The barrier monomer material can be paraxylene dimeric polymer, paraxylene, multifunctional (first
Base) acrylate, hexanediyl ester, acrylate, acrylate, cyanoethyl
(list) acrylate, isobornyl acrylate, isobornyl acrylate, methacrylic acid octadecyl
Ester, isodecyl acrylate, acrylic acid, lauryl, propenoic acid beta-carboxyl ethyl ester, acrylic acid tetrahydrofurfuryl
Ester, dintrile acrylate, pentafluorophenyl group acrylate, nitrophenylacrylate, 2- Phenoxyethyls third
Olefin(e) acid ester, 2- phenoxyethyl methacrylates, 2,2,2- methacrylates, the propylene of diethylene glycol two
Acid esters, triethylene glycol diacrylate, triethylene glycol dimethacrylate, tripropylene glycol diacrylate,
Glycol diacrylate, new penta glycol diacrylate, ethoxylated neopentylglycol diacrylate,
Polyethyleneglycol diacrylate, glycol diacrylate, bisphenol A epoxy diacrylate, 1,6- oneself two
Alcohol dimethylacrylate, trimethylolpropane trimethacrylate, ethoxylated trimethylolpropane 3 third
Olefin(e) acid ester, propylated trimethylolpropane trimethacrylate, the propylene of three (2- ethoxys) isocyanuric acid ester three
Acid esters ester, pentaerythritol triacrylate, acrylate, acrylate, ring-type diacrylate, ring
One or more in oxypropylene acid esters, vinyl ethers, vinyl naphthalene and acrylonitrile.In a specific implementation
In example, it can form poly- to two after polymerisation using paraxylene dimeric polymer monomer material
The polymer barrier layer 1202 of toluene, concrete technology and advantage hereinbefore have been described, and no longer go to live in the household of one's in-laws on getting married herein
State.It should be noted that the monomer of other polymer that compact structure can be formed after polymerisation
Material may also be used for forming the polymer barrier layer 1202.
It should be noted that the thinner thickness of above layers material, not to the flexible substrate 100 can
Bending or foldability can be affected greatly, and specific thickness can be set according to practical application condition.
For example, in certain embodiments, the thickness of the planarization layer 110 is 0.1 to 100 micron, the nothing
The thickness on machine barrier layer 1201 is 1 to 200 nanometer, and the thickness of the polymer barrier layer 1202 is 0.1
To 100 microns.In addition, it should also be noted that, because the flexible base board structure is subsequently used at it
Upper formation electronic device, therefore, the planarization layer 110, the inorganic barrier layer 1201 and described poly-
Compound barrier layer 1202 also should be insulating materials, and with appropriate thermal conductivity in favor of electronics device thereon
The radiating of part.
Accordingly, the embodiment of the present invention additionally provides a kind of method for forming above-mentioned flexible base board structure, institute
The method of stating includes：Flexible substrate is provided；Planarization layer, the planarization are formed in the flexible substrate
Surface of the layer away from the flexible substrate side is flat；Barrier layer is formed on the planarization layer, it is described
Barrier layer is used for the infiltration for stopping oxygen and aqueous vapor.Forming method on the flexible base board structure is upper
Description has been carried out in stating in embodiment, specifically refers to the above embodiments, will not be repeated here.
Further, the embodiment of the present invention additionally provides a kind of flexible electronic device, the flexible electronic device
Part includes the flexible base board structure in above-described embodiment, and the device in the flexible base board structure
Layer.The flexible electronic device can be flexible electronic circuit, flexible electrochomeric films, flexible photovoltaic
Device, intelligent label or identification label, flexible battery, smart card, Flexible light-emitting diodes, You Jifa
Optical diode display panel or other electronic devices sensitive to oxygen and aqueous vapor etc..The present invention is implemented
The flexible electronic device of example blocks oxygen and aqueous vapor enters institute due to using above-mentioned flexible base board structure
Device layer is stated, reliability and the life-span of the flexible electronic device is improved.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art,
Without departing from the spirit and scope of the present invention, it can make various changes or modifications, therefore the guarantor of the present invention
Shield scope should be defined by claim limited range.
Claims (17)
1. a kind of flexible base board structure, it is characterised in that including：
Flexible substrate；
Planarization layer in the flexible substrate, the planarization layer is away from the flexible substrate one
The surface of side is flat；
Barrier layer on the planarization layer, the barrier layer is used to stop oozing for oxygen and aqueous vapor
Thoroughly.
2. flexible base board structure as claimed in claim 1, it is characterised in that the barrier layer includes inorganic resistance
Barrier and polymer barrier layer.
3. flexible base board structure as claimed in claim 2, it is characterised in that the polymer barrier layer is located at
On the inorganic barrier layer.
4. flexible base board structure as claimed in claim 2, it is characterised in that the inorganic barrier layer is located at institute
State on polymer barrier layer.
5. flexible base board structure as claimed in claim 2, it is characterised in that the inorganic barrier layer and described
The quantity of polymer barrier layer is multiple, the multiple inorganic barrier layer and the multiple polymer barrier
Layer is alternately stacked on the planarization layer.
6. flexible base board structure as claimed in claim 1, it is characterised in that the material bag of the planarization layer
Include polymethyl methacrylate, cyclohexane dimethanol diacrylate polymer, ring-type diacrylate
Polymer, isobornyl methacrylate polymer, three isocyanurate polymers, three acrylic acid
One kind or many in ester polymer, epoxide resin polymer, silicon resin copolymer and polyether polyols
Kind.
7. flexible base board structure as claimed in claim 1, it is characterised in that the material of the inorganic barrier layer
Including aluminum oxide, silica, titanium dioxide, zirconium oxide, zinc oxide, vanadium dioxide, titanium dioxide
One or more in chromium, manganese dioxide, silicon nitride and carborundum.
8. flexible base board structure as claimed in claim 1, it is characterised in that the material of the polymer barrier layer
Material includes the one or more in Parylene, polyurethane and epoxy resin.
9. flexible base board structure as claimed in claim 1, it is characterised in that the material bag of the flexible substrate
Include ethylene-tetrafluoroethylene copolymer, polyethylene terephthalate, polyethylene, makrolon, polyolefin,
The polyester films such as polypropylene, polyether sulfone, poly- naphthalene, polyimides, polyester, polymethyl methacrylate,
One or more in stainless steel and aluminium.
10. flexible base board structure as claimed in claim 1, it is characterised in that be dispersed with the flexible substrate
Nano particle for absorbing oxygen and aqueous vapor.
11. flexible base board structure as claimed in claim 10, it is characterised in that the material of the nano particle
Including one kind in calcium oxide, barium monoxide, boron oxide, magnesia, alkyl aluminum and aluminum alkoxide or
It is a variety of.
12. a kind of forming method of flexible base board structure, it is characterised in that including：
Flexible substrate is provided；
Planarization layer is formed in the flexible substrate, the planarization layer is away from the flexible substrate one
The surface of side is flat；
Form barrier layer on the planarization layer, the barrier layer is used to stopping oozing for oxygen and aqueous vapor
Thoroughly.
13. the forming method of flexible base board structure as claimed in claim 12, it is characterised in that described flat
Changing the material of layer includes polymethyl methacrylate, cyclohexane dimethanol diacrylate polymer, ring
Shape diacrylate ester polymer, isobornyl methacrylate polymer, three isocyanuric acid polyisocyanate polyadditions
Thing, triacrylate polymer, epoxide resin polymer, silicon resin copolymer and polyether polyols
In one or more, forming the planarization layer includes：
The coating flatization layer monomer material in the flexible substrate；
Ultraviolet light cross-linking or heat cure processing are carried out to the planarization layer monomer material, is formed and institute
State the corresponding polymeric planarizing layer of monomer material.
14. the forming method of flexible base board structure as claimed in claim 12, it is characterised in that form described
Barrier layer includes forming inorganic barrier layer and forms polymer barrier layer.
15. the forming method of flexible base board structure as claimed in claim 14, it is characterised in that described inorganic
The material on barrier layer includes aluminum oxide, silica, titanium dioxide, zirconium oxide, zinc oxide, dioxy
Change the one or more in vanadium, chromium dioxide, manganese dioxide, silicon nitride and carborundum, form described
The technique of inorganic barrier layer is ald, physical vapour deposition (PVD) or chemical vapor deposition.
16. the forming method of flexible base board structure as claimed in claim 14, it is characterised in that the polymerization
The material on thing barrier layer includes the one or more in Parylene, polyurethane and epoxy resin, shape
Include into the polymer barrier layer：
Barrier-coating monomer material；
The barrier monomer material is produced thermic or photo polymerization reaction, form polymer barrier layer.
17. a kind of flexible electronic device, it is characterised in that including：
Flexible base board structure as any one of claim 1-11；
Device layer in the flexible base board structure.
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| PCT/CN2016/081233 WO2017133106A1 (en) | 2016-02-06 | 2016-05-06 | Flexible substrate structure and method of forming same, and flexible electronic device |
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| CN114402091A (en) * | 2019-09-20 | 2022-04-26 | 新加坡国立大学 | Electronic devices including one or more single layer amorphous films and methods of forming the same |
| CN115679265A (en) * | 2021-07-22 | 2023-02-03 | 纳米及先进材料研发院有限公司 | Composite coating and preparation method thereof |
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