CN107040159A - A kind of electric bath control circuit and electric bath - Google Patents
A kind of electric bath control circuit and electric bath Download PDFInfo
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- CN107040159A CN107040159A CN201710365892.9A CN201710365892A CN107040159A CN 107040159 A CN107040159 A CN 107040159A CN 201710365892 A CN201710365892 A CN 201710365892A CN 107040159 A CN107040159 A CN 107040159A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M11/00—Power conversion systems not covered by the preceding groups
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N1/00—Electrotherapy; Circuits therefor
- A61N1/18—Applying electric currents by contact electrodes
- A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
- A61N1/36—Applying electric currents by contact electrodes alternating or intermittent currents for stimulation
- A61N1/36014—External stimulators, e.g. with patch electrodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
Abstract
A kind of electric bath controls circuit, including Waveform generating circuit, amplifying circuit, booster circuit, imput output circuit, described Waveform generating circuit includes NE555 chips, and the pin output waveform signals of NE555 chips send intos after triple integral processing of circuit to waveform signal passes through operational amplifier output waveform to imput output circuit in amplifying circuit；Imput output circuit by the control structure of metal-oxide-semiconductor and triode formation make its can either output signal, pulse current can be absorbed again, imput output circuit is connected with 30V boostings, 30V boostings are obtained by DC12V voltages by booster circuit.Many electrode plates are provided with a kind of electric bath, electric bath, above-mentioned electric bath control circuit is connected with every electrode plate.Controlled in this control circuit using metal-oxide-semiconductor, fast response time, control is accurate, and wiring board area small volume, cost are low.
Description
Technical field
The present invention relates to a kind of electric bath control circuit and electric bath, belong to technical field of medical instruments.
Background technology
Electric bath is produced by control chip is converted into controllable pulsating current after pulsating waveform, boosting, the pulsation of output
Electric current exports to battery lead plate the battery lead plate that pulse current is absorbed as positive pole as negative pole, when patient body is immersed in the water,
Pulsating current carries out rehabilitation by positive pole, water human skin, negative pole formation loop.This electric bath is used to treat god
Through systemic disease, spondylalgia syndrome, neuralgia, polyneuritis, slightly benumbs, and body and Sensitive nerve stress
Property is increased or decreased；Existing electrobath electrical medical apparatus is general, provided with the electrode that one group of polarity is different, to be treated using in a groove
When the path flowed through of electric current be unable to flexible modulation change, therapeutic effect is bad.
The content of the invention
It is an object of the invention to overcome current electric bath to control above mentioned problem present in circuit, there is provided a kind of electrobath
Groove controls circuit.
To realize the purpose of the present invention, following technical schemes are employed：A kind of electric bath controls circuit, including waveform production
Raw circuit, amplifying circuit, booster circuit, imput output circuit, described Waveform generating circuit include NE555 chips, use
DC5V positive sources are directly accessed 4 pin and 8 pin of NE555 chips, and resistance value connects DC5V power supplys for 1K Ω resistance R82 one end
Positive pole, the other end accesses 2 pin of NE555 chips；The resistance R88 that resistance value is 68K Ω is also associated with 2 pin, resistance R88's is another
One end connection adjustable resistance R97；R97 adjustable extent is 0-20K Ω, the electric capacity C16 that the adjustable resistance R97 other ends pass through concatenation
It is connected to negative pole；Electric capacity C16 is serially connected between DC5V power positive cathode；Diode D14 positive pole is connected to DC5V electricity
On the positive pole of source, diode D14 negative pole series resistor R80 is connected to negative pole, and adjustable resistance R97 connection electric capacity C16 end connects
Enter 6 pin of NE555 chips, adjustable resistance R97 adjustable 2 pin terminated into NE555 chips；2 pin and 6 pin of NE555 chips are short
Connect；3 pin output waveform signals of NE555 chips are to electric capacity C54, and consecutive is connected to three integrating circuit, waveform signal after electric capacity C54
Sent into after triple integral processing of circuit in the DAC7512 of amplifying circuit；In amplifying circuit, by operational amplifier
Enter the base stage of NPN triode Q1 2 after LM2904 amplifications by resistance R132, enter back into the TIP41C of power amplification triode
In base stage be combined as follower, output waveform is to imput output circuit；Described imput output circuit includes two current potentials
Consistent level switch PB11, level switch PA8, level switch PB11 access NPN triode C4 base stage by resistance R20,
Triode C4 grounded emitter, is connected to pull down resistor R21 and electric capacity C75, three between triode C4 base stage and ground
Boosted on pole pipe C4 colelctor electrode by resistance R10 connections 30V；Triode C4 colelctor electrode passes through the poles of resistance R14 connections PNP tri-
Pipe Q1 base stage, triode Q1 emitter stage is boosted by resistance R88 connections 30V, and triode Q1 colelctor electrode is connected to metal-oxide-semiconductor
Received in C7 grid, metal-oxide-semiconductor C7 drain electrode on the waveform signal after amplifying circuit, metal-oxide-semiconductor C7 source electrode from front to back
It is connected with amplitude limiter circuit, resistance R158, the filtered electrical of electric capacity C18 compositions of diode D50, diode D51 composition in turn backward
Road, common mode choke coil U28, the battery lead plate U3 of electric bath are connected to after common mode choke coil, in metal-oxide-semiconductor C7 grid and source electrode
Between be connected with resistance R100；Metal-oxide-semiconductor C6 drain electrode is connected on metal-oxide-semiconductor C7 source electrode, metal-oxide-semiconductor C6 source ground, metal-oxide-semiconductor
The colelctor electrode that triode C8 is also associated with 12V voltages, metal-oxide-semiconductor C6 grid is connect on C6 grid by resistance R72；Triode
C8 grounded emitter, connects pull down resistor R27, electric capacity C24, level switch respectively between triode C8 base stage and ground connection
The base stage that PA8 passes through resistance R22 connection triodes C8；Above-mentioned 30V boostings are obtained by DC12V voltages by booster circuit,
Described booster circuit includes NE555 chips, further, described resistance R10 value 470K Ω；Resistance R14 values
120KΩ；Resistance R88 value 1000K Ω, further, described metal-oxide-semiconductor C7, metal-oxide-semiconductor C8 use LR024N.
Many electrode plates are provided with a kind of electric bath, described electric bath, above-mentioned electricity is connected with every electrode plate
Bath controls circuit, in use, the level switch in the electric bath control circuit connected at least two battery lead plates is in not
Same current potential, further, described electric bath have 4 independent electrobath cell bodies, respectively left upper extremity electrobath cell body, upper right
In limb electrobath cell body, left lower extremity electrobath cell body, right lower extremity electrobath cell body, each electric bath body two blocks of electricity are provided with relative wall
Pole plate, further, be provided with described electric bath on backup electrode plate interface, backup electrode plate interface be connected with it is above-mentioned
Electric bath controls circuit.
The positive advantageous effects of the present invention are：In the present invention after battery lead plate connection electric bath control circuit, two
Impulse wave is exported as positive pole when individual level switch is high potential, pulse is absorbed as negative pole when two level switch are low potential
Ripple, in the case of having polylith pole plate in electric bath, by setting the electric bath that each battery lead plate is connected to control the electricity in circuit
Bit switch just can easily change the polarity of each battery lead plate in electric bath, and this reversing can be over the course for the treatment of
It is synchronous to carry out, different current flowing approach can be formed after the reversing of battery lead plate, different therapentic parts are acted on, produced
Raw good therapeutic effect, can also set a battery lead plate as negative pole, remaining electrode plate is positive pole, makes pulse current
Orientation concentrates flowing, realizes the emphasis treatment of privileged site, can also set a battery lead plate as positive pole, remaining electrode plate is
Negative pole, makes pulse current occur orientation and disperses, treated while realizing multiple location, can also set multiple positive poles and multiple negative
Pole, makes electric current formation multipath flowing treatment, to adapt to use metal-oxide-semiconductor control in the treatment needs that human body is different, this control circuit
System, fast response time, control is accurate, and wiring board area small volume, cost are low, and good control can be produced in electric bath by applying
Therapeutic effect.
Brief description of the drawings
Fig. 1 is the circuit diagram of Waveform generating circuit of the present invention.
Fig. 2 is the circuit diagram of amplifying circuit.
Fig. 3 is the circuit diagram of booster circuit.
Fig. 4 is the schematic diagram of imput output circuit.
Fig. 5 is a kind of schematic diagram of electric bath.
Embodiment
In order to more fully explain the implementation of the present invention, there is provided the embodiment of the present invention.These embodiments are only
Elaboration to the present invention, is not limited the scope of the invention.
With reference to accompanying drawing explanation further details of to the present invention, as shown in drawings, a kind of electric bath controls circuit, including ripple
Shape generation circuit, amplifying circuit, booster circuit, imput output circuit, described Waveform generating circuit include NE555 chips, adopt
4 pin and 8 pin of NE555 chips are directly accessed with DC5V positive sources, resistance value is electric for 1K Ω resistance R82 one end connection DC5V
Source positive pole, the other end accesses 2 pin of NE555 chips；The resistance R88 that resistance value is 68K Ω is also associated with 2 pin, resistance R88's
Other end connection adjustable resistance R97；R97 adjustable extent is 0-20K Ω, the electric capacity that the adjustable resistance R97 other ends pass through concatenation
C16 is connected to negative pole；Electric capacity C16 is serially connected between DC5V power positive cathode；Diode D14 positive pole is connected to DC5V's
On positive source, diode D14 negative pole series resistor R80 is connected to negative pole, adjustable resistance R97 connection electric capacity C16 end
Access 6 pin of NE555 chips, adjustable resistance R97 adjustable 2 pin terminated into NE555 chips；2 pin and 6 pin of NE555 chips
Short circuit；3 pin output waveform signals of NE555 chips are to electric capacity C54, and consecutive is connected to three integrating circuit, waveform letter after electric capacity C54
Send into the DAC7512 of amplifying circuit number after triple integral processing of circuit；Power supply is+5V direct current supplys, and D14 is diode
Indicator lamp, resistance R80 is current-limiting resistance, and Waveform generating circuit core has NE555 time base circuits to constitute stable multi-oscillation
Resistance R88+ resistance R97 in device, circuit>>Resistance R82, the symmetrical square wave approximate with electric capacity C20 generations, its frequency is 1KHz, this
Square wave is exported through electric capacity C54 is changed into triangular wave output after resistance R101, electric capacity C55 integration again, by resistance R112, electric capacity
C105 quadratic integrals and resistance R131, electric capacity C58 triple integrals are changed into approximate sinusoidal waveform.
In amplifying circuit, NPN triode Q1 2 is entered by resistance R132 after operational amplifier LM2904 amplifications
Base stage, the base stage entered back into the TIP41C of power amplification triode is combined as follower, and output waveform is to input and output
Circuit；In Waveform Input DAC7512,8 times are amplified by operational amplifier LM2904, the poles of NPN tri- are entered by resistance R132
The base stage that pipe Q12 base stage is entered back into the TIP41C of power amplification triode, is combined as follower output waveform to input
The drain electrode of metal-oxide-semiconductor C7 in output circuit.
Described imput output circuit includes the consistent level switch PB11 of two current potentials, level switch PA8, level switch
PB11 accesses NPN triode C4 base stage, triode C4 grounded emitter, triode C4 base stage and ground by resistance R20
Between be connected on pull down resistor R21 and electric capacity C75, triode C4 colelctor electrode by resistance R10 connections 30V boost；
Triode C4 colelctor electrode passes through resistance R88 by resistance R14 connection PNP triodes Q1 base stage, triode Q1 emitter stage
30V boostings are connected, triode Q1 colelctor electrode, which is connected in metal-oxide-semiconductor C7 grid, metal-oxide-semiconductor C7 drain electrode, to be received by amplification electricity
It is connected with diode D50, diode D51 composition on waveform signal behind road, metal-oxide-semiconductor C7 source electrode in turn backward from front to back
Amplitude limiter circuit, resistance R158, filter circuit, the common mode choke coil U28, the battery lead plate U3 connections of electric bath of electric capacity C18 compositions
After common mode choke coil, resistance R100 is connected between metal-oxide-semiconductor C7 grid and source electrode；Metal-oxide-semiconductor C6 drain electrode is connected to
On metal-oxide-semiconductor C7 source electrode, metal-oxide-semiconductor C6 source ground connects 12V voltages on metal-oxide-semiconductor C6 grid by resistance R72, metal-oxide-semiconductor
Triode C8 colelctor electrode is also associated with grid；Triode C8 grounded emitter, between triode C8 base stage and ground connection
Pull down resistor 27, electric capacity C24 are connected respectively, and level switch PA8 passes through resistance R22 connection triodes C8 base stage, input and output
Circuit is one of core of this control circuit, and the change of electrode reversal of plate polarity is realized by adjusting the current potential height of level switch,
It is described further below, when PB11, PA8 take high potential, the current potential rise in NPN triode C4 base stages, triode C4 conductings, three
Voltage on the emitter stage of the close ground connection of voltage on level pipe C4 colelctor electrodes, PNP triodes Q1 is 0, triode Q1 conductings, MOS
Voltage turn-on is obtained on pipe C7 grid, because PA8 is also simultaneously high potential, triode C8 is in the conduction state, so 12V is electric
Pressure is grounded after R72, and metal-oxide-semiconductor C6 grid does not have trigger voltage, is closed, the arteries and veins for the input that drained through metal-oxide-semiconductor C7
Rush signal by diode D50, diode D51 constitute amplitude limiter circuit, resistance R158, electric capacity C18 composition filter circuit, altogether
Exported after mould choking-winding U28 to the battery lead plate U3 of electric bath, at this moment control the positive pole that circuit is output waveform；As PB11, PA8
When taking current potential, the current potential in NPN triode C4 base stages is low potential, and triode C4 is not turned on, on triode C4 colelctor electrodes
Voltage is high potential close to the voltage on ground connection 30V, PNP triodes Q1, and triode Q1 is not turned on, and metal-oxide-semiconductor C7 grid does not have
Trigger voltage is not turned on, and waveform signal can not pass through metal-oxide-semiconductor C7；Because PA8 is also simultaneously low potential, triode C8, which is in, to close
State, thus 12V voltages after resistance R72 to forming trigger voltage, metal-oxide-semiconductor C6 conductings, metal-oxide-semiconductor on metal-oxide-semiconductor C6 grid
The drain electrode of C6 drain electrodes absorbs the pulse that battery lead plate U3 comes, in actual use, and it is high electricity to have the level switch on a battery lead plate
Position, it is low potential to have the level switch on a battery lead plate, you can form current loop.In imput output circuit, resistance R20 is limit
The base current that system is flowed into NPN triode 1BW, raises base potential, here because triode C4 only plays on-off action, institute
As long as to reach that colelctor electrode (1/100) 1/Hpe can control triode C4 turn-on and turn-off, resistance R20 is primarily served
Current-limiting protection is acted on, resistance R21 pull down resistors, and value 10K ensures that the base stage of triode C4 during without switching signal remains low
Level, drags down transistor base voltage, and electric capacity C75 values 104 or 103 can be filtered out during switch is switched on or off
Shake, prevent misoperation, resistance R20, electric capacity C75, pull down resistor R21 collective effects are in the triode C4 conductings come and pass
It is disconnected, the 30V boostings for R10=470K Ω that triode C4 colelctor electrodes are connected by resistance, equally on transistor collector also
PNP triode Q1 (model 3BW) base stage is connected to by resistance R14, so passes through triode C4 NPN (model 1BW)
Turn-on and turn-off drag down or improve PNP triodes Q1 base potential, controller triode Q1 turn-on and turn-off, three-level
When pipe C4 is not turned on, the voltage on triode C4 colelctor electrodes is approximately equal to 30V -0 .7=30V, 30V voltage effect
It is less than the voltage of PNP triode emitter stages in R14 to base stage, is that can ensure PNP triodes Q1 by theoretical calculation
Be not turned on, if triode C4 turn on, boosting gained 30V can pass through resistance R10 resistance eutral grounding, triode C4 current collections
Electrode potential is approximately equal to 0V, and the collector potential of resistance R14 connections is equal to 0 V, and PNP triodes Q1 is turned on immediately, PNP
Triode Q1 conducting make metal-oxide-semiconductor C7 turn on, metal-oxide-semiconductor C7, metal-oxide-semiconductor C8 use LR024N, the conducting of N-channel MOS pipe and
It is to have directly that shut-off, which depends on Vgs pinch-off voltages Ids, leakage current, LR024N switching frequencies, the device power of first device in itself,
Relation, selects LR024N here, and the milliohm Id of its voltage Vdss=60V Rds=35=25A, Vgs=± 20V is complete
Need of work is met, because its pinch-off voltage needs 20V needing follow-up booster circuit that DC12V voltages are raised,
The turn-on and turn-off of N-channel MOS pipe can be controlled.Find that Vgs=DC12v is switchable metal-oxide-semiconductor C7 in actual use, electricity
Resistance R15 connection grids are that metal-oxide-semiconductor C6, which is turned on and off, to be passed through in order to ensure that grid makes to be in reliable low potential without high level
Triode NPN C8 are controlled, and it is also to test to use in actual test to be powered here we used DC12V, DC12v
By 1M Ohmic resistances R72 by NPN triode C8 colelctor electrodes to ground, button switch PA8 controls, 3.3V are similarly subjected to
/ 1K=0.3ma electric current, that is, to triode C8 base voltage be 3.3V when triode ON, three during equal to 0V
Pole pipe is turned off, and resistance R27, electric capacity C24, resistance R21, electric capacity C75 are similar to after PA11, and function is the same not in narration.Press
Button PB11, PA8, are a global switch in actual circuit, and when PB11 connects 3.3V, PA8 meets 3.3V, works as PB11
During ground connection, PA8 ground connection, resistance R14 value 120K Ω；Resistance R88 value 1000K Ω.
Above-mentioned 30V boostings are obtained by DC12V voltages by booster circuit, and described booster circuit includes NE555
Chip, booster circuit are as shown in figure 3, main function is to improve LR024N switching speed, using NE555 chips and electricity
Hinder R136, resistance R135, electric capacity C78, electric capacity C60 and produce fixed frequency and clock, diode D28, diode D29 groups
Voltage is increased to 30V by conjunction.
Fig. 5 is to be provided with many electrode plates in a kind of electric bath that circuit is controlled using this electric bath, described electric bath,
Above-mentioned electric bath control circuit is connected with per electrode plate, in use, the electric bath connected at least two battery lead plates
The level switch in circuit is controlled to be in different current potentials, described electric bath has 4 independent electrobath cell bodies, is respectively a left side
It is relative in upper limbs electrobath cell body, right upper extremity electrobath cell body, left lower extremity electrobath cell body, right lower extremity electrobath cell body, each electric bath body
Wall on be provided with two electrode plates, described electric bath and be provided with backup electrode plate interface, connect on backup electrode plate interface
It is connected to above-mentioned electric bath control circuit.In Fig. 5 each mark for：1：Left upper extremity cell body；2：Right upper extremity electrobath cell body；3：Battery lead plate
Two； 4：Battery lead plate one；5：Left lower extremity electrobath cell body；6：Battery lead plate three；7：Right lower extremity electrobath cell body；8：It is every in battery lead plate four, figure
Merely illustrate in an electrode plate, actual fabrication, also have on the opposite face of each battery lead plate shown in the figure in individual electrobath cell body
One electrode plate.Above-mentioned each battery lead plate is respectively connected with above-mentioned electric bath control circuit, in use, at least two battery lead plates
Level switch in the electric bath control circuit of connection is in different current potentials, such as when two electricity in left upper extremity electrobath cell body
When level switch in the electric bath control circuit of pole plate connection is in high potential, the battery lead plate connection in other each electrobath cell bodies
Electric bath control circuit in level switch when being in low potential, two electrode plates are for pulse in left upper extremity electrobath cell body
Battery lead plate in signal output part, other each electrobath cell bodies is absorption pulse signal, and pulse is passed through from left upper extremity electrobath cell body
Human body surface is flowed on the battery lead plate in other each electrobath cell bodies, when the electricity of two battery lead plates connection in left upper extremity electrobath cell body
Level switch one in bath control circuit in high potential, another be in low potential when, two in same cell body
Battery lead plate and human body formation treatment loop.Similarly, any battery lead plate can easily be set to send pulse signal or absorption
Pulse current.Circuit is controlled in the electric bath of each electrode plate connection identical present invention of electric bath, is conducive to making
Journey Plays, reduction manufacture and installation cost.As to how making each independent battery lead plate current potential on electric bath be in difference
Current potential, simplest method can connect artificial button at each current potential level switch, by manually touching by bonded
Lead to corresponding height level switch to realize, the STM32F103 systems of STM companies can also such as can be used by single-chip microcomputer control
Row single-chip microcomputer, the output that any IO mouthfuls of the single-chip microcomputer can be provided on 0-5V low and high level, any I/O port and pin fills electricity
Stream reaches 25ma, and the turn-on and turn-off of connected triode can be driven completely, and key control is pressed in SCM peripheral configuration
PA11, PB8 low and high level.
After embodiments of the present invention are described in detail, one of ordinary skilled in the art is clearly understood that, is not taking off
It is real to more than with various change and modification, all technical spirits according to the present invention can be carried out under spirit from above-mentioned claim
Any simple modification, equivalent variations and modification that example made are applied, the scope of technical solution of the present invention is belonged to, and the present invention is also not
It is limited to the embodiment of example in specification.
Claims (6)
1. a kind of electric bath controls circuit, including Waveform generating circuit, amplifying circuit, booster circuit, imput output circuit, it is special
Levy and be：Described Waveform generating circuit includes NE555 chips, and 4 pin of NE555 chips are directly accessed using DC5V positive sources
And 8 pin, resistance value is 1K Ω resistance R82 one end connection DC5V positive sources, and the other end accesses 2 pin of NE555 chips；2 pin
On be also associated with the resistance R88 that resistance value is 68K Ω, resistance R88 other end connection adjustable resistance R97；R97 adjustable extent
For 0-20K Ω, the adjustable resistance R97 other ends are connected to negative pole by the electric capacity C16 of concatenation；Between DC5V power positive cathode
It is serially connected with electric capacity C16；Diode D14 positive pole is connected on DC5V positive source, diode D14 negative pole series resistor
R80 is connected to negative pole, and 6 pin of NE555 chips are accessed in adjustable resistance R97 connection electric capacity C16 end, and adjustable resistance R97's can
Adjust 2 pin terminated into NE555 chips；2 pin of NE555 chips and 6 pin short circuits；3 pin output waveform signals of NE555 chips are to electricity
Hold consecutive after C54, electric capacity C54 and be connected to three integrating circuit, waveform signal sends into amplification electricity after triple integral processing of circuit
In the DAC7512 on road；In amplifying circuit, the poles of NPN tri- are entered by resistance R132 after operational amplifier LM2904 amplifications
Pipe Q12 base stage, the base stage entered back into the TIP41C of power amplification triode is combined as follower, output waveform to extremely input
Output circuit；Described imput output circuit includes consistent level switch PB11, the level switch PA8 of two current potentials, and current potential is opened
Close the base stage that PB11 accesses NPN triode C4 by resistance R20, triode C4 grounded emitter, triode C4 base stage with
It is connected between ground on pull down resistor R21 and electric capacity C75, triode C4 colelctor electrode by resistance R10 connection 30V liters
Pressure；Triode C4 colelctor electrode passes through resistance by resistance R14 connection PNP triodes Q1 base stage, triode Q1 emitter stage
R88 connections 30V boosts, and triode Q1 colelctor electrode is connected in metal-oxide-semiconductor C7 grid, metal-oxide-semiconductor C7 drain electrode and received by putting
Diode D50, diode D51 groups are connected with turn backward from front to back on waveform signal after big circuit, metal-oxide-semiconductor C7 source electrode
Into amplitude limiter circuit, resistance R158, electric capacity C18 composition filter circuit, common mode choke coil U28, the battery lead plate U3 of electric bath
It is connected to after common mode choke coil, resistance R100 is connected between metal-oxide-semiconductor C7 grid and source electrode；Metal-oxide-semiconductor C6 drain electrode connects
On the source electrode for being connected on metal-oxide-semiconductor C7, metal-oxide-semiconductor C6 source ground connects 12V voltages, MOS on metal-oxide-semiconductor C6 grid by resistance R72
Triode C8 colelctor electrode is also associated with pipe C6 grid；Triode C8 grounded emitter, triode C8 base stage is with connecing
Pull down resistor R27, electric capacity C24, the base stage that level switch PA8 passes through resistance R22 connection triodes C8 are connected between ground respectively；On
The 30V boostings stated are obtained by DC12V voltages by booster circuit, and described booster circuit includes NE555 chips.
2. a kind of electric bath control circuit according to claim 1, it is characterised in that：Described resistance R10 values 470K
Ω；Resistance R14 value 120K Ω；Resistance R88 value 1000K Ω.
3. a kind of electric bath control circuit according to claim 1, it is characterised in that：Described metal-oxide-semiconductor C7, metal-oxide-semiconductor C8
Use LR024N.
4. being provided with many electrode plates in a kind of electric bath, described electric bath, connected in every electrode plate just like claim 1
Described electric bath control circuit, in use, the current potential in the electric bath control circuit connected at least two battery lead plates is opened
Close and be in different current potentials.
5. a kind of electric bath according to claim 4, it is characterised in that：Described electric bath has 4 independent electrobaths
Cell body, respectively left upper extremity electrobath cell body, right upper extremity electrobath cell body, left lower extremity electrobath cell body, right lower extremity electrobath cell body, Mei Ge electricity
Two electrode plates are provided with bath body on relative wall.
6. a kind of electric bath according to claim 4, it is characterised in that：Standby electricity pole plate is provided with described electric bath
Electric bath control circuit as claimed in claim 1 is connected with interface, backup electrode plate interface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710365892.9A CN107040159B (en) | 2017-05-23 | 2017-05-23 | Electric bath control circuit and electric bath |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710365892.9A CN107040159B (en) | 2017-05-23 | 2017-05-23 | Electric bath control circuit and electric bath |
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| Publication Number | Publication Date |
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| CN107040159A true CN107040159A (en) | 2017-08-11 |
| CN107040159B CN107040159B (en) | 2023-10-10 |
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| CN201710365892.9A Active CN107040159B (en) | 2017-05-23 | 2017-05-23 | Electric bath control circuit and electric bath |
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| CN107040159B (en) | 2023-10-10 |
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Address after: Anyang City, Henan province 456300 Ku Neihuang County Middle Road Applicant after: HENAN XIANGYU MEDICAL EQUIPMENT Co.,Ltd. Address before: 456300 middle section of Diku Avenue, Neihuang County, Anyang City, Henan Province Applicant before: Henan Xiangyu Medical Equipment Co.,Ltd. Address after: Anyang City, Henan province 456300 Ku Neihuang County Middle Road Applicant after: Henan Xiangyu Medical Equipment Co.,Ltd. Address before: Anyang City, Henan province 456300 Ku Neihuang County Middle Road Applicant before: ANYANG XIANGYU MEDICAL EQUIPMENT Co.,Ltd. |
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