CN107039589A - A kind of unleaded CuBr2The preparation method of base hydridization perovskite thin film and its obtained film and application - Google Patents

A kind of unleaded CuBr2The preparation method of base hydridization perovskite thin film and its obtained film and application Download PDF

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CN107039589A
CN107039589A CN201710210114.2A CN201710210114A CN107039589A CN 107039589 A CN107039589 A CN 107039589A CN 201710210114 A CN201710210114 A CN 201710210114A CN 107039589 A CN107039589 A CN 107039589A
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cubr
unleaded
brc
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CN107039589B (en
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杨志胜
柯蔚芳
王艳香
黄丽群
郭平春
朱华
赵学国
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Jingdezhen Ceramic Institute
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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    • Y02E10/549—Organic PV cells

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Abstract

The invention discloses a kind of unleaded CuBr2The preparation method of base hydridization perovskite thin film, with CH2BrCnH2n+1NH2、HBr、CuBr2For raw material, ethanol is solvent, and low toxicity, stable (CH are prepared using solwution method2BrCnH2n+1NH3)2CuBr4Hydridization perovskite thin film.In addition, the invention also discloses utilize film and its application made from above-mentioned preparation method.The unleaded CuBr of the present invention2Base hydridization perovskite thin film, has good photoelectricity performance applied to perovskite solar-energy photo-voltaic cell as photosensitive activity layer；Meanwhile, to substitute prior art PbX2Base film, on the one hand can improve the stability and the sensitiveness to humidity of perovskite material, on the other hand can reduce pollutions of the Pb to environment, be conducive to perovskite solar cell green, the industrialization process of environmental protection.

Description

A kind of unleaded CuBr2The preparation method and its obtained film of base hydridization perovskite thin film And application
Technical field
The present invention relates to solar-energy photo-voltaic cell technical field, more particularly to one kind are photosensitive as perovskite solar cell The unleaded CuBr of active layer2The preparation method of base hydridization perovskite thin film and its obtained film and application.
Background technology
Nowadays, environmental pollution and lack of energy problem become increasingly conspicuous, all over the world all in implementing plan sustainable development Energy policy, solar cell is that photovoltaic generation causes extensive attention.But the energy of traditional silica-based solar cell is returned The receipts cycle is long, expensive, therefore the new film photovoltaic material of exploitation, and the development to photovoltaic art is anticipated with important guidance Justice.
Hydridization perovskite structural material is the class novel optoelectronic materials quickly grown in the last few years, by by organic and nothing Machine molecule is combined in an orderly manner, so that the advantage of the two is combined in a molecular complex.Wherein, the crystalline substance of inorganic component Body structure and rigid frame, and strong covalent bond or ion bond energy provide high mobility, good heat endurance, organic principle Regulatable photoelectric properties and filming performance are then provided, hydridization perovskite material can be made to realize that low temperature and low cost are processed. This hybrid laminated perovskite structure photoelectric functional material combines the advantage of organic and inorganic materials, compensate for Respective deficiency, while new effect and phenomenon is generated again, so as to cause the further investigated of researcher.
At present, existing study in time more is PbX2Base hydridization perovskite battery, such as (CH3NH3PbX3-nYn) form Compound be used as the solar cell of light absorbent, wherein X, Y=Cl, Br, I etc., the highest conversion effect of its laboratory certification Rate has exceeded 22%.But, due to PbX2The stability and toxicity problem of based perovskite, cause the preparation of final battery and make Strict anhydrous and oxygen-free environment must be kept during, so as to add solar cell manufacture and the cost safeguarded, and is given Environmentally friendly the problems such as, brings pressure, its application is received certain limitation.Therefore, it is badly in need of research and development low toxicity, stable nothing Lead base hydridization perovskite thin film, not only contributes to green, the industrialization process of environmental protection, and for perovskite photovoltaic cell performance The overall also tool that improves be of great significance.At present, there is not yet relevant prepare (CH using solwution method2BrCnH2n+1NH3)2CuBr4Film is applied to perovskite battery as the report of photosensitive activity layer.
The content of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of unleaded CuBr2Base hydridization perovskite thin film Preparation method, low toxicity is prepared by solwution method, stable unleaded (CH2BrCnH2n+1NH3)2CuBr4Hydridization perovskite is thin Film.Another object of the present invention is to provide using film and its application made from above-mentioned preparation method, replaced PbX2Base Film as perovskite solar cell photosensitive activity layer so that while being significantly improved in toxicity and stability, So that solar cell has excellent photovoltaic performance, in favor of photovoltaic industry green, the industrialization process of environmental protection.
The purpose of the present invention is achieved by the following technical programs：
A kind of unleaded CuBr that the present invention is provided2The preparation method of base hydridization perovskite thin film, comprises the following steps：
(1) with CH2BrCnH2n+1NH2It is raw material, wherein n >=1 with HBr, ethanol is solvent, by heating reflux reaction, is subtracted After pressure distillation, filtering, recrystallization, through drying obtained ammonium salt CH2BrCnH2n+1NH3Br；
(2) with the ammonium salt CH2BrCnH2n+1NH3Br is solute, and ethanol is solvent, is made through ultrasonic disperse CH2BrCnH2n+1NH3Br solution；
(3) with CuBr2For solute, ethanol is solvent, and CuBr is made through ultrasonic disperse2Solution；
(4) according to CH described in stoichiometric proportion2BrCnH2n+1NH3Br solution: CuBr2Solution=2: 1, both are mixed into progress Heating reflux reaction, through removing solvent, washing, drying, obtains hydridization perovskite material (CH2BrCnH2n+1NH3)2CuBr4；
(5) with the hydridization perovskite material (CH2BrCnH2n+1NH3)2CuBr4It is that solvent is coated for solute, ethanol Solution；In the gas tank of inert gas shielding, the coating solution is prepared into film layer, annealed place using spin-coating method in substrate Reason makes after its sufficient crystallising, that is, obtains (CH2BrCnH2n+1NH3)2CuBr4Hydridization perovskite thin film.
Further, heating reflux reaction temperature is 70~80 in step (1), step (4) described in preparation method of the present invention DEG C, the reaction time is 0.5~2h.CH made from the step (2), step (3)2BrCnH2n+1NH3Br solution, CuBr2Solution Concentration is 0.01~0.5mmol/mL ethanol.The speed of spin coating is 2000~5000rpm in the step (5)；Annealing temperature is 100~125 DEG C, annealing time is 10~30min.
Another object of the present invention is achieved by the following technical programs：
The present invention utilizes above-mentioned unleaded CuBr2Film made from the preparation method of base hydridization perovskite thin film, it is described (CH2BrCnH2n+1NH3)2CuBr4Film is used as the photosensitive activity layer of unleaded perovskite solar-energy photo-voltaic cell.
A kind of unleaded perovskite solar-energy photo-voltaic cell that the present invention is provided, includes electrically conducting transparent and serves as a contrast successively from bottom to up Bottom, compacted zone, photosensitive activity layer, hole transmission layer, metal electrode, the photosensitive activity layer is above-mentioned (CH2BrCnH2n+1NH3)2CuBr4Film.
Further, it is additionally provided between compacted zone described in solar-energy photo-voltaic cell of the present invention and photosensitive activity layer mesoporous Layer.
The invention has the advantages that：
The present invention prepares (CH with solwution method2BrCnH2n+1NH3)2CuBr4Film, the film is the two dimension of regular arrangement Ordered structure, with higher mobility, its absorption spectrum covers 650nm from 300nm, applied to perovskite photovoltaic Battery has good photoelectricity performance as photosensitive activity layer；Meanwhile, to substitute prior art PbX2Base film, on the one hand The stability and the sensitiveness to humidity of perovskite material can be improved, pollutions of the Pb to environment on the other hand can be reduced, make Solar cell is all real to realize energy-conservation and environmental protection during preparation and use, is conducive to perovskite battery green, environmental protection Industrialization process, is of great significance to the overall tool that improves of perovskite photovoltaic cell performance.
Brief description of the drawings
Below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail：
Fig. 1 is the structural representation of the unleaded perovskite solar-energy photo-voltaic cell of the embodiment of the present invention；
Fig. 2 is the J-V curve maps of the unleaded perovskite solar-energy photo-voltaic cell of the embodiment of the present invention.
In figure：Transparent conductive substrate 1, compacted zone 2, mesoporous layer 3, photosensitive activity layer 4, hole transmission layer 5, metal electrode 6
Embodiment
Embodiment one：
1st, a kind of unleaded CuBr of the present embodiment2The preparation method of base hydridization perovskite thin film, its step is as follows：
(1) it is 1: 1 with CH according to stoichiometry2BrCH2CH2NH2It is raw material with HBr, ethanol is solvent, in 80 DEG C of temperature The lower heating reflux reaction 1h of degree, after vacuum distillation, filtering, recrystallization, in 60 DEG C of dried overnights in vacuum drying oven, is made ammonium Salt CH2BrCH2CH2NH3Br；
(2) with above-mentioned 0.438g ammonium salts CH2BrCH2CH2NH3Br is solute, and 10mL absolute ethyl alcohols are solvent, through ultrasound point Dissipate 15min and CH is made2BrCH2CH2NH3Br solution；
(3) with 0.223g CuBr2For solute, 10mL absolute ethyl alcohols are solvent, and CuBr is made through ultrasonic disperse 15min2It is molten Liquid；
(4) by above-mentioned CH2BrCH2CH2NH3Br solution and CuBr2Heating reflux reaction 1h at a temperature of solution mixes 80 DEG C, profit Removed with rotary evaporator after solvent, washed three times, be dried overnight in vacuum drying oven in 80 DEG C with ether, obtain hydridization calcium titanium Pit wood material (CH2BrCH2CH2NH3)2CuBr4；
(5) by above-mentioned 0.671g hydridization perovskite material (CH2BrCH2CH2NH3)2CuBr4It is dissolved in 1mL ethanol and obtains To coating solution；In the gas tank of inert gas shielding, by coating solution in the way of spin coating, according to 2000rpm, 30s ginseng Number prepares film layer on the surface of the substrate, after the 10min that then annealed at a temperature of 100 DEG C makes its sufficient crystallising, obtains (CH2BrCH2CH2NH3)2CuBr4Film.
2nd, a kind of unleaded perovskite solar-energy photo-voltaic cell of the present embodiment, as shown in figure 1, sequentially consisting of transparent lead Electric substrate 1, compacted zone 2, mesoporous layer 3, photosensitive activity layer 4, hole transmission layer 5, metal electrode 6, in integral arrangement, planar junction The perovskite solar-energy photo-voltaic cell of structure, its preparation process is as follows：
(1) processing of transparent conductive substrate 1
FTO electro-conductive glass pieces are sequentially placed into liquid detergent, deionized water, ethanol, isopropanol, acetone solvent, with ultrasound Ripple washer is respectively cleaned by ultrasonic 15min, and finally washed sheet glass nitrogen gun is dried up and is put into baking oven in 80 DEG C of temperature Lower drying, UV ozone processing 5min, is used as transparent conductive substrate 1；
(2) preparation of compacted zone 2
1g diacetyl acetonyl diisopropanol titaniums (TiAcAc) are added in 10.3g n-butanols, shaken up, ultrasonic disperse is obtained Compacted zone solution；Then 80 μ L compacted zones solution are added dropwise in the surface of transparent conductive substrate 1 with liquid-transfering gun, are revolved with 2000rpm, 30s After painting is finished, 10min is baked at a temperature of 135 DEG C on hot plate, that is, obtains compacted zone 2；
(3) preparation of mesoporous layer 3
1g titanium oxide spin coating slurries 18NR-T is added into 7g ethanol, rear ultrasonically treated 20min is uniformly dissolved and obtains mesoporous layer Solution；Then the mesoporous layer solution of 80 μ L is added dropwise in the surface of compacted zone 2 with liquid-transfering gun, stops 5s, finished with 5000rpm, 30s spin coating Afterwards, 10min is baked at a temperature of 135 DEG C；It is subsequently placed in Muffle furnace and sinters, 325 DEG C, insulation 5min, warp is raised to through 40min 10min is raised to 375 DEG C, insulation 10min, is raised to 450 DEG C, insulation 15min through 15min, 500 DEG C, insulation are raised to through 15min 30min, obtains mesoporous layer 3；
(4) preparation of photosensitive activity layer 4
According to above-mentioned unleaded CuBr2The preparation method of base hydridization perovskite thin film, is substrate with mesoporous layer 3, in mesoporous layer 3 Surface prepares (CH2BrCH2CH2NH3)2CuBr4Film, is used as perovskite photosensitive activity layer 4；
(5) preparation of Spiro-MeOTAD hole transmission layers 5
17.2mg Spiro-MeOTAD are dissolved in 1mL chlorobenzene solutions, 4000rpm spin coatings 20s is pressed with the method for spin coating Spiro-MeOTAD hole transmission layers 5 are prepared on photosensitive activity layer 4；
(6) preparation of electrode 6
In the thick metal Ag electrodes of the surface evaporation 150nm of Spiro-MeOTAD hole transmission layers 5, metal electrode 6 is used as.
In order to evaluate with the present embodiment (CH2BrCH2CH2NH3)2CuBr4Film as photosensitive activity layer the perovskite sun The photovoltaic property of energy photovoltaic cell, J-V curves have been carried out using the testers of Keithley 2400 to battery prepared by this implementation Test, as a result as shown in Figure 2.Test result is as follows：Open-circuit voltage is that 0.78V, the short circuit current flow of battery are 15.87mA/cm2、 Fill factor, curve factor is that 0.48, energy conversion efficiency is 5.91%.Illustrate the present embodiment (CH2BrCH2CH2NH3)2CuBr4Film can Pb base hydridization perovskite material is replaced to be applied to solar cell.
Embodiment two：
1st, a kind of unleaded CuBr of the present embodiment2The preparation method of base hydridization perovskite thin film, its step is as follows：
(1) it is 1: 1 with CH according to stoichiometry2BrCH2NH2It is raw material with HBr, ethanol is solvent, at a temperature of 80 DEG C Heating reflux reaction 1h, after vacuum distillation, filtering, recrystallization, in 60 DEG C of dried overnights in vacuum drying oven, is made ammonium salt CH2BrCH2NH3Br；
(2) with above-mentioned 0.410g ammonium salts CH2BrCH2NH3Br is solute, and 10mL absolute ethyl alcohols are solvent, through ultrasonic disperse CH is made in 15min2BrCH2NH3Br solution；
(3) with 0.223g CuBr2For solute, 10mL absolute ethyl alcohols are solvent, and CuBr is made through ultrasonic disperse 15min2It is molten Liquid；
(4) by above-mentioned CH2BrCH2NH3Br solution and CuBr2Heating reflux reaction 1h at a temperature of solution mixes 80 DEG C, is utilized Rotary evaporator is removed after solvent, is washed three times, is dried overnight in vacuum drying oven in 80 DEG C with ether, obtains hydridization perovskite Material (CH2BrCH2NH3)2CuBr4；
(5) by above-mentioned 0.633g hydridization perovskite material (CH2BrCH2NH3)2CuBr4It is dissolved in 1mL ethanol and is applied Cover solution；In the gas tank of inert gas shielding, by coating solution in the way of spin coating, exist according to 3000rpm, 30s parameter Film layer is prepared on substrate surface, after the 15min that then annealed at a temperature of 100 DEG C makes its sufficient crystallising, (CH is obtained2BrCH2NH3)2CuBr4Film.
2nd, a kind of unleaded perovskite solar-energy photo-voltaic cell of the present embodiment, as shown in figure 1, sequentially consisting of transparent lead Electric substrate 1, compacted zone 2, mesoporous layer 3, photosensitive activity layer 4, hole transmission layer 5, metal electrode 6, in integral arrangement, planar junction The perovskite solar-energy photo-voltaic cell of structure, its preparation process is as follows：
(1) processing of transparent conductive substrate 1
Be the same as Example one；
(2) preparation of compacted zone 2
Be the same as Example one；
(3) preparation of mesoporous layer 3
Be the same as Example one；
(4) preparation of photosensitive activity layer 4
According to above-mentioned unleaded CuBr2The preparation method of base hydridization perovskite thin film, is substrate with mesoporous layer 3, in mesoporous layer 3 Surface prepares (CH2BrCH2NH3)2CuBr4Film, is used as perovskite photosensitive activity layer 4；
(5)PEDOT:The preparation of PSS hole transmission layers 5
By 70 μ L PEDOT:The method of PSS spin coating liquid spin coatings is by 2000rpm, 30s parameter on photosensitive activity layer 4 Prepare PEDOT:PSS hole transmission layers 5；
(6) preparation of electrode 6
In PEDOT:Metal Ag electrodes thick the surface evaporation 100nm of PSS hole transmission layers 5, are used as metal electrode 6.
In order to evaluate with the present embodiment (CH2BrCH2NH3)2CuBr4Film as photosensitive activity layer perovskite solar energy The photovoltaic property of battery is lied prostrate, the survey of J-V curves has been carried out to battery prepared by this implementation using the testers of Keithley 2400 Examination, as a result as shown in Figure 2.Test result is as follows：Open-circuit voltage is that 0.75V, the short circuit current flow of battery are 8.49mA/cm2, filling The factor is that 0.39, energy conversion efficiency is 2.49%.Illustrate the present embodiment (CH2BrCH2NH3)2CuBr4Film can replace Pb bases Hydridization perovskite material is applied to solar cell.
Embodiment three：
1st, a kind of unleaded CuBr of the present embodiment2The preparation method of base hydridization perovskite thin film, its step be the same as Example one, is obtained To (CH2BrCH2CH2NH3)2CuBr4Film.
2nd, a kind of unleaded perovskite solar-energy photo-voltaic cell of the present embodiment, as shown in figure 1, sequentially consisting of transparent lead Electric substrate 1, compacted zone 2, mesoporous layer 3, photosensitive activity layer 4, hole transmission layer 5, metal electrode 6, in integral arrangement, planar junction The perovskite solar-energy photo-voltaic cell of structure, its preparation process is as follows：
(1) processing of transparent conductive substrate 1
Be the same as Example one；
(2) preparation of compacted zone 2
15mmol diethanol amine is dissolved in 50mL ethylene glycol monomethyl ether, 15mmol two water zinc acetates stirring is added 1~2h, makes it fully dissolve and react, that is, obtains the ZnO colloidal sols of water white transparency；Transparent conductive substrate 1 is dipped vertically into ZnO molten Stop after 4s and take out in glue, after the surface of transparent conductive substrate 1 is there is no liquid trickling, put it to warm table in 120 DEG C of temperature Degree is lower to dry 10min, obtains ZnO compacted zones 2；
(3) preparation of mesoporous layer 3
By the method for ZnO slurry silk-screen printings on ZnO compacted zones 2 film forming；It is subsequently placed in Muffle furnace and sinters, from room Elevated after 100min 500 DEG C of temperature, is then incubated 30min and cools again, obtain mesoporous layer 3；
(4) preparation of photosensitive activity layer 4
Be the same as Example one, is substrate with mesoporous layer 3, and (CH is prepared on the mesoporous surface of layer 32BrCH2CH2NH3)2CuBr4 Film, is used as perovskite photosensitive activity layer 4；
(5) preparation of Spiro-MeOTAD hole transmission layers 5
Be the same as Example one；
(6) preparation of electrode 6
Be the same as Example one.
In order to evaluate with the present embodiment (CH2BrCH2CH2NH3)2CuBr4Film as photosensitive activity layer the perovskite sun The photovoltaic property of energy photovoltaic cell, J-V curves have been carried out using the testers of Keithley 2400 to battery prepared by this implementation Test, as a result as shown in Figure 2.Test result is as follows：Open-circuit voltage is that 0.83V, the short circuit current flow of battery are 15.58mA/cm2、 Fill factor, curve factor is that 0.35, energy conversion efficiency is 4.52%.Illustrate the present embodiment (CH2BrCH2CH2NH3)2CuBr4Film can Pb base hydridization perovskite material is replaced to be applied to solar cell.
Example IV：
1st, a kind of unleaded CuBr of the present embodiment2The preparation method of base hydridization perovskite thin film, its step be the same as Example two, is obtained To (CH2BrCH2NH3)2CuBr4Film.
2nd, a kind of unleaded perovskite solar-energy photo-voltaic cell of the present embodiment, as shown in figure 1, sequentially consisting of transparent lead Electric substrate 1, compacted zone 2, mesoporous layer 3, photosensitive activity layer 4, hole transmission layer 5, metal electrode 6, in integral arrangement, planar junction The perovskite solar-energy photo-voltaic cell of structure, its preparation process is as follows：
(1) processing of transparent conductive substrate 1
Be the same as Example one；
(2) preparation of compacted zone 2
Be the same as Example three；
(3) preparation of mesoporous layer 3
Be the same as Example three；
(4) preparation of photosensitive activity layer 4
Be the same as Example two, is substrate with mesoporous layer 3, and (CH is prepared on the mesoporous surface of layer 32BrCH2NH3)2CuBr4It is thin Film, is used as perovskite photosensitive activity layer 4；
(5)PEDOT:The preparation of PSS hole transmission layers 5
Be the same as Example two；
(6) preparation of electrode 6
Be the same as Example two.
In order to evaluate with the present embodiment (CH2BrCH2NH3)2CuBr4Film as photosensitive activity layer perovskite solar energy The photovoltaic property of battery is lied prostrate, the survey of J-V curves has been carried out to battery prepared by this implementation using the testers of Keithley 2400 Examination, as a result as shown in Figure 2.Test result is as follows：Open-circuit voltage is that 0.82V, the short circuit current flow of battery are 7.25mA/cm2, filling The factor is that 0.41, energy conversion efficiency is 2.41%.Illustrate the present embodiment (CH2BrCH2NH3)2CuBr4Film can replace Pb bases Hydridization perovskite material is applied to solar cell.

Claims (9)

1. a kind of unleaded CuBr2The preparation method of base hydridization perovskite thin film, it is characterised in that comprise the following steps：
(1) with CH2BrCnH2n+1NH2It is raw material, wherein n >=1 with HBr, ethanol is solvent, is steamed by heating reflux reaction, decompression After evaporating, filter, recrystallizing, through drying obtained ammonium salt CH2BrCnH2n+1NH3Br；
(2) with the ammonium salt CH2BrCnH2n+1NH3Br is solute, and ethanol is solvent, and CH is made through ultrasonic disperse2BrCnH2n+ 1NH3Br solution；
(3) with CuBr2For solute, ethanol is solvent, and CuBr is made through ultrasonic disperse2Solution；
(4) according to CH described in stoichiometric proportion2BrCnH2n+1NH3Br solution: CuBr2Solution=2: 1, both are mixed and heated Back flow reaction, through removing solvent, washing, drying, obtains hydridization perovskite material (CH2BrCnH2n+1NH3)2CuBr4；
(5) with the hydridization perovskite material (CH2BrCnH2n+1NH3)2CuBr4It is that solvent obtains coating solution for solute, ethanol； In the gas tank of inert gas shielding, the coating solution is prepared into film layer using spin-coating method in substrate, annealed processing makes After its sufficient crystallising, that is, obtain (CH2BrCnH2n+1NH3)2CuBr4Hydridization perovskite thin film.
2. unleaded CuBr according to claim 12The preparation method of base hydridization perovskite thin film, it is characterised in that：The step Suddenly heating reflux reaction temperature is 70~80 DEG C in (1), step (4), and the reaction time is 0.5~2h.
3. unleaded CuBr according to claim 12The preparation method of base hydridization perovskite thin film, it is characterised in that：The step Suddenly (2), CH made from step (3)2BrCnH2n+1NH3Br solution, CuBr2The concentration of solution is 0.01~0.5mmol/mL ethanol.
4. unleaded CuBr according to claim 12The preparation method of base hydridization perovskite thin film, it is characterised in that：The step Suddenly the speed of spin coating is 2000~5000rpm in (5).
5. unleaded CuBr according to claim 12The preparation method of base hydridization perovskite thin film, it is characterised in that：The step Suddenly annealing temperature is 100~125 DEG C in (5), and annealing time is 10~30min.
6. utilize one of the claim 1-5 unleaded CuBr2Film made from the preparation method of base hydridization perovskite thin film.
7. unleaded CuBr described in claim 62The application of base hydridization perovskite thin film, it is characterised in that：(the CH2BrCnH2n+ 1NH3)2CuBr4Film is used as the photosensitive activity layer of perovskite solar-energy photo-voltaic cell.
8. a kind of unleaded perovskite solar-energy photo-voltaic cell, it is characterised in that：Include transparent conductive substrate successively from bottom to up (1), compacted zone (2), photosensitive activity layer (4), hole transmission layer (5), metal electrode (6), the photosensitive activity layer (4) is right It is required that unleaded (the CH described in 62BrCnH2n+1NH3)2CuBr4Film.
9. unleaded perovskite solar-energy photo-voltaic cell according to claim 1, it is characterised in that：The compacted zone (2) and Mesoporous layer (3) is additionally provided between photosensitive activity layer (4).
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Cited By (2)

* Cited by examiner, † Cited by third party
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CN109957394A (en) * 2017-12-26 2019-07-02 致晶科技（北京）有限公司 A kind of perovskite material and its preparation method and application
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