CN107039482B - Semiconductor assembly and light-emitting device with same - Google Patents

Semiconductor assembly and light-emitting device with same Download PDF

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Publication number
CN107039482B
CN107039482B CN201610937411.2A CN201610937411A CN107039482B CN 107039482 B CN107039482 B CN 107039482B CN 201610937411 A CN201610937411 A CN 201610937411A CN 107039482 B CN107039482 B CN 107039482B
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diode
transistor
light emitting
coupled
semiconductor layer
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CN107039482A (en
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黄知澍
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Epistar Corp
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Epistar Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
    • H05B47/10—Controlling the light source

Abstract

The invention relates to a semiconductor assembly and a light-emitting device with the same, wherein the semiconductor assembly comprises a substrate; a1 st transistor formed on the substrate, wherein the 1 st transistor is a normally-on transistor, and the 1 st transistor includes a1 st semiconductor layer; a2 nd semiconductor layer formed on the 1 st semiconductor layer; a3 rd semiconductor layer formed on the 2 nd semiconductor layer; a gate electrode, a drain electrode, and a source electrode formed on the 3 rd semiconductor layer; and a wheatstone bridge rectifier circuit formed on the substrate, the wheatstone bridge rectifier circuit including: a1 st rectifying diode; a2 nd rectifying diode electrically connected to the 1 st rectifying diode; a3 rd rectifying diode electrically connected to the 2 nd rectifying diode; and a4 th rectifying diode electrically connected to the 3 rd rectifying diode.

Description

Semiconductor assembly and light-emitting device with same
Technical Field
The present disclosure relates to light emitting devices, and particularly to a semiconductor device and a light emitting device having the same.
Background
A Light Emitting Diode (LED) is a Diode manufactured by using a semiconductor epitaxial technology, and a current can flow through the inside of the Diode under a forward bias, so that electrons and holes in the LED are recombined to emit Light. The light emitting diode has the characteristics of long service life, power saving, low pollution, light weight, short and small size, difficult damage, high switching speed, high reliability and the like at normal temperature. Therefore, more and more light emitting devices utilize light emitting diodes as light emitting elements.
However, the light emitting efficiency of the led is decreased by the temperature, and at a high temperature, more heat is generated when more current passes through the led at the same voltage value. Such vicious cycle not only consumes power, but also shortens the life of the light emitting diode. Therefore, the light emitting device using the led generally has to spend a considerable extra cost on heat dissipation.
Semiconductor epitaxial techniques may also be used to fabricate field effect transistors. Us 4,777,516 discloses a iii-class arsenide light emitting diode and a field effect transistor formed on the same substrate in sequence, wherein the field effect transistor is formed by implanting silicon ions into a gaas layer; us 7,432,538, 7,750,351 and 7,981,744 disclose ill-nitride field effect transistors formed on a substrate.
Disclosure of Invention
In order to solve the above technical problem, the present invention provides a semiconductor device.
The semiconductor assembly includes:
a substrate;
a1 st transistor formed on the substrate, the 1 st transistor being a normally-on transistor, the 1 st transistor comprising:
a1 st semiconductor layer;
a2 nd semiconductor layer formed on the 1 st semiconductor layer;
a3 rd semiconductor layer formed on the 2 nd semiconductor layer;
a gate electrode, a drain electrode, and a source electrode formed on the 3 rd semiconductor layer; and
a wheatstone bridge rectifier circuit formed on the substrate, the wheatstone bridge rectifier circuit comprising:
a1 st rectifying diode;
a2 nd rectifying diode electrically connected to the 1 st rectifying diode;
a3 rd rectifying diode electrically connected to the 2 nd rectifying diode; and
a4 th rectifying diode electrically connected to the 3 rd rectifying diode;
a1 st light emitting diode formed on the substrate and including a2 nd 1 st semiconductor layer; and
a circuit pattern electrically connecting the 1 st transistor as a1 st current stabilization unit and electrically coupling the 1 st current stabilization unit to the 1 st light emitting diode.
In an embodiment of the invention, the 1 st led further includes:
a2 nd 1 st semiconductor layer;
an active layer formed on the 2 nd 1 st semiconductor layer; and
a4 th semiconductor layer formed on the active layer.
In an embodiment of the invention, the gate electrode comprises any one or a combination of the group consisting of tungsten, platinum, gold, nickel, and aluminum, and/or the source electrode and the drain electrode comprise any one or a combination of the group consisting of titanium, aluminum, nickel, gold, and chromium.
In an embodiment of the invention, the circuit pattern is formed on the substrate.
In an embodiment of the present invention, the rectifying diodes 1, 2, 3, and 4 are schottky diodes and are formed on the substrate.
In an embodiment of the invention, the rectifier diodes 1, 2, 3, and 4 are light emitting diodes and are formed on the substrate.
The present invention provides a light emitting device including:
the semiconductor device according to the above aspect; and
and the power supply is electrically connected with the 1 st light emitting diode and the 1 st current stabilizing unit through the circuit pattern.
In an embodiment of the present invention, a gate electrode of the 1 st transistor is coupled to a source electrode of the 1 st transistor.
In an embodiment of the present invention, the 1 st current stabilization unit further includes a schottky diode electrically connected between the 1 st transistor and the power source, and an anode electrode of the schottky diode is coupled to a source electrode of the 1 st transistor.
In one embodiment of the present invention, the schottky diode is formed on the substrate.
In an embodiment of the invention, the 1 st current stabilization unit further includes a2 nd transistor, the 2 nd transistor is electrically connected between the 1 st transistor and the power supply, a drain electrode of the 2 nd transistor is coupled to a source electrode of the 1 st transistor, a gate electrode of the 2 nd transistor is coupled to a drain electrode of the 2 nd transistor, and a source electrode of the 2 nd transistor is coupled to the power supply.
In an embodiment of the invention, a structure of the 2 nd transistor is the same as the 1 st transistor, and the 2 nd transistor is formed on the substrate.
In an embodiment of the invention, the 1 st rectifying diode is electrically connected between the 1 st end of the power supply and the 1 st output end of the wheatstone bridge rectifying circuit, and an anode electrode of the 1 st rectifying diode is coupled to the 1 st end of the power supply; the 2 nd rectifying diode is electrically connected between the 2 nd end of the power supply and the 1 st output end of the Wheatstone bridge rectifying circuit, and the anode electrode of the 2 nd rectifying diode is coupled with the 2 nd end of the power supply; the 3 rd rectifying diode is electrically connected between the 2 nd output end of the Wheatstone bridge rectifying circuit and the 2 nd end of the power supply, and an anode electrode of the 3 rd rectifying diode is coupled with the 2 nd output end of the Wheatstone bridge rectifying circuit; and the 4 th rectifier diode is electrically connected between the 2 nd output end of the Wheatstone bridge rectifier circuit and the 1 st end of the power supply, and the anode electrode of the 4 th rectifier diode is coupled with the 2 nd output end of the Wheatstone bridge rectifier circuit, wherein the 1 st rectifier diode, the 2 nd rectifier diode, the 3 rd rectifier diode and the 4 th rectifier diode are light emitting diodes or Schottky diodes.
In summary, the present invention provides a semiconductor device and a light emitting apparatus having the same, wherein the semiconductor device couples a mosfet to a light emitting diode through a circuit pattern to control a current passing through the light emitting diode and suppress a temperature of the light emitting diode, so that the lifetime of the light emitting diode is not shortened by overheating, and the cost required for heat dissipation of the light emitting apparatus is reduced; if the gate electrode of the metal semiconductor field effect transistor is coupled to the drain electrode, a Schottky diode can be formed, and the effects of rectification, electrostatic discharge resistance and the like can be achieved. Furthermore, since the metal semiconductor field effect transistor and the light emitting diode are formed/integrated on the same substrate, the manufacturing cost of the light emitting device is saved.
Drawings
Fig. 1 is a schematic physical diagram of a light emitting device 100 and a transistor M1 according to an embodiment of the invention.
FIG. 2 is a characteristic curve of drain voltage versus current of a transistor according to an embodiment of the present invention.
Fig. 3A is a schematic diagram of a light-emitting device 300 according to an embodiment of the invention.
Fig. 3B is another schematic diagram of a light-emitting device 300 according to an embodiment of the invention.
Fig. 4 is a schematic diagram of a light emitting device 400 according to an embodiment of the invention.
Fig. 5 is a schematic diagram of a light-emitting device 500 according to an embodiment of the invention.
Fig. 6 is a schematic diagram of a light emitting device 600 according to an embodiment of the invention.
Fig. 7A is a schematic diagram of a light emitting device 700 according to an embodiment of the invention.
Fig. 7B is a schematic diagram of the wheatstone bridge rectifier circuit 122 provided in the embodiment of fig. 7A.
Fig. 8 is a schematic diagram of a light emitting device 800 according to an embodiment of the invention.
Fig. 9 is a schematic diagram of a light emitting device 900 according to an embodiment of the invention.
Fig. 10 is a schematic diagram of a light-emitting device 1000 according to an embodiment of the invention.
Fig. 11 is a schematic diagram of a light-emitting device 1100 according to an embodiment of the invention.
Detailed Description
The following description will be made in detail with reference to the accompanying drawings and specific embodiments, wherein the light emitting device includes a light emitting element integrated with a light emitting diode and a mosfet.
Referring to fig. 1, fig. 1 is a schematic physical diagram of a light emitting device 100 according to an embodiment of the invention. The light emitting device 100 includes a current stabilizing unit 110, a power source 120, and a light emitting diode D1, wherein the light emitting diode D1 is formed on the substrate 10. The substrate 10 may be a sapphire (sapphire) substrate or a silicon substrate. In addition, in the manufacturing process of the light emitting diode, the structure of the light emitting diode further includes a buffer Layer 20, a semiconductor Layer 30, an active Layer (MQW) 40, a semiconductor Layer 50, a Transparent Conductive Layer (TCL) 60, and the like. The buffer layer 20 is typically formed of a material such as aluminum nitride (AlN) including aluminum nitride (AlN), the semiconductor layer 30 includes an n-type gallium nitride (n-GaN) based semiconductor layer, and the semiconductor layer 50 includes a p-type gallium nitride (p-GaN) based semiconductor layer, for example. The anode electrode P1 contacts the transparent conductive layer 60, and the cathode electrode N1 contacts the semiconductor layer 30 by an etching technique.
The current stabilizing unit 110 includes a transistor M1, the transistor M1 is a Metal Semiconductor Field Effect transistor (MESFET) formed on the substrate 10 by a process similar to that of the Diode D1, the structure of the transistor M1 includes the buffer layer 20, the Semiconductor layer 30, the active layer 40, and the Semiconductor layer 50, and a Semiconductor layer 70 is further formed on the Semiconductor layer 50, wherein the Semiconductor layer 70 is an n-type gallium nitride (n-GaN) Semiconductor layer. Further, a semiconductor layer 80 is formed on the semiconductor layer 70, and then a separate semiconductor layer 81 and a separate semiconductor layer 83 are formed by etching, wherein the semiconductor layer 80 and the semiconductor layers 81 and 83 formed therefrom are also made of n-type gallium nitride based semiconductor. Next, the gate electrode GT forms a schottky contact (schottky contact) with the semiconductor layer 70, and the drain electrode DN and the source electrode SR form ohmic contacts (ohmic contacts) with the semiconductor layers 81 and 83, respectively.
In an embodiment of the present invention, the gate electrode GT comprises any one or a combination of tungsten, platinum, gold, nickel, and aluminum, such as tungsten (W), platinum-gold (Pt/Au) alloy, and nickel-aluminum (Ni/Al) alloy, and the drain electrode DN and the source electrode SR comprise any one or a combination of titanium, aluminum, nickel, and gold, such as titanium-aluminum (Ti/Al) alloy and titanium-aluminum-nickel-gold (Ti/Al/Ni/Au) alloy.
Fig. 2 is a characteristic curve of the drain voltage versus current of the mosfet (i.e., the transistor M1) according to an embodiment of the present invention. Referring to fig. 1 and fig. 2, in the present embodiment, if the gate voltage Vg of the gate electrode GT of the transistor M1 is a fixed value, for example, the gate voltage Vg is 0, and if the temperature of the light emitting diode D1 rises, causing the drain voltage Vd of the drain electrode DN of the transistor M1 to rise above the pinch-off voltage Vp, the transistor M1 enters the saturation region. Thus, unless the drain voltage Vd exceeds the threshold breakdown voltage Vb 1-Vb 6, the current ID through the LED D1 and the transistor M1 will not rise with the increase of the drain voltage Vd.
According to the characteristic curve shown in fig. 2, in an embodiment of the present invention, when the transistor M1 enters the saturation region, the gate voltage Vg of the gate electrode GT is controlled to suppress the current ID passing through the light emitting diode D1. For example, if the current ID passing through the light emitting diode D1 is to be made larger, the gate voltage Vg is set higher, for example, to 0V. If the current ID passing through the LED D1 is to be small, the gate voltage Vg is set to be low, for example, -2.5V.
On the other hand, in order to achieve the purpose of suppressing the current ID by the direct process, in the present embodiment, the transistor M1 is also fixed in the saturation region by the direct coupling of the gate electrode GT and the source electrode SR. At this time, if the temperature of the light emitting diode D1 increases with the increase of the ambient temperature, the voltage of the drain voltage Vd increases, and the current ID does not change with the increase of the drain voltage Vd, thereby preventing the temperature of the light emitting diode D1 from increasing again.
Further, the semiconductor layer 80 and the semiconductor layer 70 may be adjusted to be semiconductors of, for example, n-type gallium nitride with different doping concentrations. Here, when the gate voltage Vg is a fixed value, for example, 0V, the magnitude of the current ID can be controlled by doping the semiconductor layer 70 and the semiconductor layer 80 with different concentrations, or by adjusting the channel thickness and width of the semiconductor layer 70.
As can be seen from the above, if the light emitting diode D1 and the current stabilizing unit 110 including the metal semiconductor transistor (i.e., the transistor M1) are formed on the substrate 10, the gate voltage of the transistor M1 can be adjusted by the circuit pattern to control the current flowing through the light emitting diode D1, so as to prevent the light emitting diode D1 from overheating due to the excessive current. A more detailed implementation is presented below in terms of examples of different circuit schematics.
Fig. 3A is a schematic diagram of a light-emitting device 300 according to an embodiment of the invention. Referring to fig. 1 and 3A, the embodiment of fig. 3A is an equivalent circuit of the embodiment of fig. 1, where the same reference numerals denote the same or similar components, and fig. 3A is compared with fig. 1. In this embodiment, the light emitting device 300 includes a current stabilizing unit 110, a power source 120, and a light emitting diode D1. The light emitting diode D1 receives and emits light according to the current ID from the power source 120, and the current stabilizing unit 110 is electrically connected between the light emitting diode D1 and the power source 120. Specifically, the anode electrode P1 of the LED D1 is coupled to the 1 st terminal of the power source 120. The current stabilizing unit 110 includes a transistor M1, a drain electrode DN of the transistor M1 is coupled to the cathode electrode N1 of the LED D1, a gate electrode GT of the transistor M1 is coupled to the source electrode SR of the transistor M1, and a source electrode SR of the transistor M1 is coupled to the 2 nd terminal of the power source 120. In one embodiment of the present invention, the power source 120 is a dc power source, the 1 st terminal of the power source 120 is a power voltage, and the 2 nd terminal of the power source 120 is a ground voltage.
Fig. 3B is another schematic diagram of a light-emitting device 300 according to an embodiment of the invention. The light emitting device 300 includes a current stabilizing unit 110, a power source 120, and a light emitting diode D1. This embodiment is substantially the same as the embodiment of fig. 3A, and is different from the embodiment of fig. 3A in that the gate electrode of the transistor M1 controls the magnitude of the current ID by receiving the control voltage Vc alone.
Fig. 4 is a schematic diagram of a light emitting device 400 according to an embodiment of the invention. Referring to fig. 4, the light emitting device 400 includes a current stabilizing unit 110, a power source 120, and a light emitting diode D1. Compared to the embodiment shown in fig. 3A, the current stabilizing unit 110 of the light emitting device 400 of the present embodiment further includes a transistor M2 electrically connected between the transistor M1 and the power source 120. The drain electrode of the transistor M2 is coupled to the source electrode of the transistor M1, the gate electrode of the transistor M2 is coupled to the drain electrode of the transistor M2, and the source electrode of the transistor M2 is coupled to the 2 nd terminal of the power source 120. By adding the transistor M2 to the current stabilizing unit 110, the light emitting device 400 can have enhanced resistance to electrostatic Discharge (ESD).
Further, the transistor M2 may be formed on the substrate 10 as in the embodiment of fig. 1, like the transistor M1.
In addition, referring to fig. 5, fig. 5 is a schematic view of a light emitting device 500 according to an embodiment of the invention. The light emitting device 500 includes a current stabilizing unit 110, a power source 120, and a light emitting diode D1. This embodiment is substantially the same as the embodiment shown in FIG. 4, except that the transistor M2 of the current stabilizing unit 110 in the embodiment shown in FIG. 4 is replaced by a Schottky diode DS, wherein the anode electrode of the Schottky diode DS is coupled to the source electrode of the transistor M1, and the cathode electrode of the Schottky diode DS is coupled to the 2 nd terminal of the power source 120.
Fig. 6 is a schematic diagram of a light emitting device 600 according to an embodiment of the invention. Referring to fig. 6, the light emitting device 600 includes a current stabilizing unit 110, a half-wave rectified voltage source 620, and a light emitting diode D1. The half-wave rectified voltage source 620 of the present embodiment forms a dc power source through an ac power source VA, a diode D6 and a voltage delay-and-drop circuit 123. The diode D6 is electrically connected between the ac power supply VA and the voltage delay and drop circuit 123. Further, the voltage delay-and-drop circuit 123 includes a capacitor C1 and a resistor R1, and the capacitor C1 and the resistor R1 are electrically connected between the diode D6 and the ac power supply VA. In an embodiment of the present invention, the diode D6 may be, for example, a plurality of schottky diodes connected in series, and forms a half-wave peak rectification circuit by being electrically connected to the voltage delay and drop circuit 123, so as to provide a dc power to the light emitting diode D1.
Fig. 7A is a schematic diagram of a light emitting device 700 according to an embodiment of the invention. Referring to fig. 7A, the light emitting device 700 includes a current stabilizing unit 110, a full-wave rectified voltage source 720, and a light emitting diode D1. The full-wave rectified voltage source 720 of the light emitting device 700 can also provide dc power to the led D1, as well as the half-wave rectified voltage source 620 of the embodiment of fig. 6. In contrast, the full-wave rectified voltage source 720 of the light emitting device 700 of the present embodiment is electrically connected to the voltage delay and drop circuit 123 through a Wheatstone bridge (Wheatstone bridge) rectifying circuit 122. Two input ends of the wheatstone bridge rectification circuit 122 are respectively coupled to two ends of the ac power supply VA. Further, the voltage delay-and-drop circuit 123 includes a capacitor C1 and a resistor R1, and the capacitor C1 and the resistor R1 are electrically connected between two output terminals of the wheatstone bridge rectifier circuit 122.
Fig. 7B is a schematic diagram of the wheatstone bridge rectifier circuit 122 of the embodiment of fig. 7A. Referring to fig. 7B, the wheatstone bridge rectifier circuit 122 includes a rectifier diode DA1, a rectifier diode DA2, a rectifier diode DA3, a rectifier diode DA4, a current stabilizing unit 1221, a current stabilizing unit 1222, a current stabilizing unit 1223, and a current stabilizing unit 1224. Since the rectifier diodes DA1 DA4 can be light emitting diodes, the current passing through the rectifier diodes DA1 DA4 can also be adjusted by the current stabilizing units 1221 to 1224 and the circuit pattern. The structures of the current stabilizing units 1221 to 1224 may be the same as the current stabilizing units 110 of the embodiments shown in FIG. 3A, FIG. 3B, FIG. 4 or FIG. 5.
Specifically, the anode electrode of the rectifier diode DA1 is coupled to the input terminal IN1 (i.e., the first terminal of the ac power supply VA) of the wheatstone bridge rectifier circuit 122, and the current stabilizing unit 1221 is electrically connected between the rectifier diode DA1 and the output terminal O1 of the wheatstone bridge rectifier circuit 122; the anode electrode of the rectifying diode DA2 is coupled to the 2 nd input terminal IN2 (i.e., the 2 nd terminal of the ac power supply VA) of the wheatstone bridge rectifying circuit 122, and the current stabilizing unit 1222 is electrically connected between the rectifying diode DA2 and the output terminal O1 of the wheatstone bridge rectifying circuit 122; an anode electrode of the rectifying diode DA3 is coupled to the output terminal O2 of the wheatstone bridge rectifying circuit 122, and the current stabilizing unit 1223 is electrically connected between the rectifying diode DA3 and the input terminal IN2 of the wheatstone bridge rectifying circuit 122; the anode electrode of the rectifying diode DA4 is coupled to the output terminal O2 of the wheatstone bridge rectifying circuit 122, and the current stabilizing unit 1224 is electrically connected between the rectifying diode DA4 and the input terminal IN1 of the wheatstone bridge rectifying circuit 122.
It should be noted that the resistor R1, the capacitor C1 and the diode D6 in the embodiment of fig. 6, and the resistor R1, the capacitor C1 in the embodiment of fig. 7A and the rectifier diodes DA1 to DA4 in the embodiment of fig. 7B may be formed/integrated on the substrate 10 in the embodiment of fig. 1. However, since the capacitance of the capacitor C1 usually needs a wide range for adjustment, the capacitor C1 can be formed by a capacitor located outside the substrate 10, so that the capacitance of the capacitor C1 is not limited by the manufacturing process. The diode D6 and the rectifier diodes DA1 to DA4 may be formed by a mosfet as in the embodiment of fig. 1. The gate electrode of the metal semiconductor field effect transistor is coupled to the anode electrode of the diode formed by the drain electrode, and the source electrode of the metal semiconductor field effect transistor forms the cathode electrode of the diode. The rectifier diodes DA1 to DA4 may be light emitting diodes or schottky diodes formed on the substrate 10.
Fig. 8 is a schematic diagram of a light emitting device 800 according to an embodiment of the invention. Referring to fig. 8, the light emitting device 800 includes a current stabilizing unit 110, a current stabilizing unit 111, a power source 120, a light emitting diode D1, and a light emitting diode D2. In the embodiment of the present invention, the current stabilizing unit 110 may include transistors M1 and M2, and the current stabilizing unit 111 may include transistors M3 and M4. In addition, the transistors M1, M2, M3 and M4 may be mosfets as shown in the embodiment of fig. 1, and are formed on the substrate 10 as shown in the embodiment of fig. 1. The drain electrodes of the transistors M1 and M3 are coupled to the cathode electrodes of the diodes D1 and D2, respectively, and the source electrodes of the transistors M2 and M4 are coupled to the two opposite ends of the power source 120, respectively. Here, the gate electrodes of the transistors M1 and M3 are coupled to the source electrodes of the transistors M1 and M3, respectively, the drain electrodes of the transistors M2 and M4 are coupled to the source electrodes of the transistors M1 and M3, respectively, and the gate electrodes of the transistors M2 and M4 are coupled to the drain electrodes of the transistors M2 and M4, respectively.
In the present embodiment, the power source 120 is an ac power source. During the positive voltage half-cycle of the power supply 120, a current path for the current ID is formed from terminal 1 of the power supply 120, through the diode D1 and the current stabilization unit 110, to terminal 2 of the power supply 120. At this time, if the diode D1 is a light emitting diode, the diode D1 emits light due to the passage of the current ID. On the other hand, during the negative voltage half-cycle of the power supply 120, the current path of the current ID is formed from the 2 nd terminal of the power supply 120, through the diode D2 and the current stabilization unit 111, to the 1 st terminal of the power supply 120. At this time, if the diode D2 is a light emitting diode, the diode D2 emits light due to the passage of the current ID.
Fig. 9 is a schematic diagram of a light emitting device 900 according to an embodiment of the invention. Referring to fig. 9, the light emitting device 900 includes a current stabilizing unit 110, a current stabilizing unit 111, a power source 120, a light emitting diode D1, and a light emitting diode D2. The light emitting device 900 is similar to the light emitting device 800 of the embodiment of fig. 8. Unlike the embodiment of fig. 8, the anode electrode of the diode D1 of the light emitting device 900 is coupled to the cathode electrode of the diode D2, and the cathode electrode of the diode D1 is coupled to the anode electrode of the diode D2. Thus, in a physical configuration, the positions of the diodes D1 and D2 can be more flexible. For example, as shown in fig. 9, the leds D1 and D2 are diodes D1 and diodes D2, which can be disposed in the same region and arranged in a pair-wise staggered manner. As such, whether the power source 120 is in the positive voltage half-cycle or the negative voltage half-cycle, although several diodes D1 and D2 are alternately illuminated, the effect of a more concentrated continuous light source can be simulated due to the closely-spaced light sources.
Fig. 10 is a schematic diagram of a light-emitting device 1000 according to an embodiment of the invention. Referring to fig. 10, the light emitting device 1000 includes a current stabilizing unit 110 and 111, a power source 120, and at least one diode D1, at least one diode D2, at least one diode D3, at least one diode D4, and at least one diode D5. This embodiment may also be referred to as the embodiment of fig. 8, where like reference numerals designate like or similar elements. The current stabilizing unit 110 may include transistors M1 and M2, and the current stabilizing unit 111 may include transistors M3 and M4. Here, the gate electrodes of the transistors M1 and M3 are coupled to the source electrodes of the transistors M1 and M3, respectively, the drain electrodes of the transistors M2 and M4 are coupled to the source electrodes of the transistors M1 and M3, respectively, and the gate electrodes of the transistors M2 and M4 are coupled to the drain electrodes of the transistors M2 and M4, respectively.
To be further described, the diode D2 is electrically connected between the diode D1 and the current stabilizing unit 110, the anode electrode of the diode D2 is coupled to the cathode electrode of the diode D1, and the cathode electrode of the diode D2 is coupled to the drain electrode of the transistor M1. An anode electrode of the diode D3 is coupled to an anode electrode of the diode D2, and a cathode electrode of the diode D3 is coupled to a drain electrode of the transistor M3. The diode D4 is electrically connected between the diode D1 and the power source 120, the anode of the diode D4 is coupled to the 1 st terminal of the power source 120, and the cathode of the diode D4 is coupled to the anode of the diode D1. In addition, the anode of the diode D5 is coupled to the 2 nd terminal of the power source 120, and the cathode of the diode D5 is coupled to the anode of the diode D1.
In an embodiment of the invention, the diodes D2, D3, D4 and D5 may be light emitting diodes or schottky diodes, and are formed on the substrate 10 as in the embodiment of fig. 1. In the present embodiment, the power source 120 is an ac power source, and the power source 120 forms a current path of the current ID from the 1 st terminal of the power source 120, through the diodes D4, D1 and D2, and through the current stabilizing unit 110 to the 2 nd terminal of the power source 120 during the positive voltage half-cycle. Similarly, the power supply 120 forms another current path for the current ID during the negative voltage half-cycle from the 2 nd terminal of the power supply 120, through the diodes D5, D1, and D3, through the current stabilization unit 111, to the 1 st terminal of the power supply 120. Since there are several groups of diodes on the current path in this embodiment, the light emitting device 1000 can be applied to high voltage. In addition, the coupling modes of D2-D5, which are illustrated in fig. 6 and 7B, can be formed by the mosfet of the embodiment of fig. 1, and are not repeated herein.
Fig. 11 is a schematic diagram of a light-emitting device 1100 according to an embodiment of the invention. Referring to fig. 11, the light emitting device 1100 includes the current stabilizing units 110, 111, 112, 113, and 114, the power source 120, and a diode D1, a diode D2, a diode D3, a diode D4, and a diode D5. The light emitting device 1100 is similar to the light emitting device 1000 of the embodiment of fig. 10, and the same reference numerals denote the same or similar components. Unlike the embodiment of fig. 10, the light emitting device 1100 further includes current stabilizing units 112, 113, and 114. The current stabilizing unit 112 is electrically connected between the diode D4 and the diode D1, the current stabilizing unit 113 is electrically connected between the diode D5 and the diode D1, and the current stabilizing unit 114 is electrically connected between the diode D1 and the diode D2.
Further, the current stabilizing units 112, 113 and 114 respectively include transistors M5, M7 and M9. The drain electrodes of the transistors M5 and M7 are coupled to the cathode electrodes of the diode D4 and the diode D5, respectively, and the drain electrode of the transistor M9 is coupled to the cathode electrode of the diode D1. In addition, the current stabilizing units 112, 113 and 114 may respectively include transistors M6, M8 and M10, source electrodes of the transistors M6 and M8 are commonly coupled to the anode electrode of the transistor D1, and a source electrode of the transistor M10 is coupled to the anode electrodes of the transistors D2 and D3. Like the current stabilization unit 110 of the embodiment of FIG. 4, the gate electrodes of the transistors M5, M7, and M9 are coupled to the source electrodes of the transistors M5, M7, and M9, respectively. The drain electrodes of the transistors M6, M8, and M10 are coupled to the source electrodes of the transistors M5, M7, and M9, respectively, and the gate electrodes of the transistors M6, M8, and M10 are coupled to the drain electrodes of the transistors M6, M8, and M10, respectively.
In the present embodiment, the diode D1 is a light emitting diode, and the diodes D2-D5 may be schottky diodes. Accordingly, the light emitting device 1100 can be applied to high voltage situations, and the light emitting position can be more concentrated on the region where the diode D1 is disposed. In addition, the coupling modes of D2-D5, which are illustrated in fig. 6 and 7B, can be formed by the mosfet of the embodiment of fig. 1, and are not repeated herein.
Further, the transistors M2 to M4 in the embodiments of fig. 8, 9 and 10 and the transistors M2 to M10 in the embodiment of fig. 11 may be metal semiconductor field effect transistors as the transistors M1 in the embodiment of fig. 1, and are formed on the substrate 10 in the embodiment of fig. 1. In addition, the transistors M2 and M4 of the embodiment in FIGS. 8, 9 and 10, and the transistors M2, M4, M6, M8 and M10 of the embodiment in FIG. 11 may be replaced by Schottky diodes, which are coupled in a manner similar to that described with respect to the Schottky diodes of the embodiment in FIG. 5, and thus, a description thereof will not be repeated.
In addition, the transistors M1 and M3 of the current stabilizing units 110 and 111 in the embodiments of fig. 8, 9 and 10 and M1, M3, M5, M7 and M9 of the current stabilizing units 112 to 114 in the embodiment of fig. 11 can receive the control voltage directly through the gate electrodes thereof to control the current passing through the light emitting diodes of the light emitting device as in the embodiment of fig. 3B. In addition, the current stabilizing units 110 to 114 of the above embodiments may include only one transistor or several stacked transistors in other embodiments according to the requirements of practical applications, wherein the number of the transistors M1, M3, M5, M7 and M9 may include only one transistor.
In addition, the current stabilizing units 110 to 114 of the above embodiments may also be based on the requirements of practical applications, wherein the transistors M2, M4, M6, M8 and M10 for resisting electrostatic discharge may not be provided in other embodiments, or in other embodiments, for example, a plurality of transistors M2, M4, M6, M8 and M10 may be provided to be overlapped in the current stabilizing units 110 to 114.
In summary, the present invention provides a light emitting device, which includes a light emitting diode and a current stabilizing unit coupled to the light emitting diode, wherein the current stabilizing unit includes the above-mentioned mosfet. The gate voltage of the metal semiconductor field effect transistor is controlled through the circuit pattern, or the gate electrode of the metal semiconductor field effect transistor is coupled to the source electrode of the metal semiconductor field effect transistor, so that the current flowing through the light emitting diode can be controlled, the light emitting diode is prevented from being overheated, the service life of the light emitting diode is shortened, and the cost required by heat dissipation of the light emitting device is reduced; if the gate electrode of the metal semiconductor field effect transistor is coupled to the drain electrode, a Schottky diode can be formed, and the effects of rectification, electrostatic discharge resistance and the like can be achieved. On the other hand, the metal semiconductor field effect transistor and the light emitting diode can be formed on the same substrate; in this way, the cost of manufacturing a light emitting device having characteristics to control the current through the light emitting diode is also saved. In addition, the invention can also integrate the components forming the direct current power supply on the substrate. Thus, the purpose of saving the cost for manufacturing the light-emitting device can be achieved.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.

Claims (13)

1. A semiconductor assembly, comprising:
a substrate;
a1 st transistor formed on the substrate, the 1 st transistor being a normally-on transistor, the 1 st transistor comprising:
a1 st semiconductor layer;
a2 nd semiconductor layer formed on the 1 st semiconductor layer;
a3 rd semiconductor layer formed on the 2 nd semiconductor layer;
a gate electrode, a drain electrode, and a source electrode formed on the 3 rd semiconductor layer; and
a wheatstone bridge rectifier circuit formed on the substrate, the wheatstone bridge rectifier circuit comprising:
a1 st rectifying diode;
a2 nd rectifying diode electrically connected to the 1 st rectifying diode;
a3 rd rectifying diode electrically connected to the 2 nd rectifying diode;
a4 th rectifying diode electrically connected to the 3 rd rectifying diode;
a1 st light emitting diode formed on the substrate and including a2 nd 1 st semiconductor layer; and
a circuit pattern electrically connecting the 1 st transistor as a1 st current stabilization unit and electrically coupling the 1 st current stabilization unit to the 1 st light emitting diode.
2. The semiconductor device of claim 1, wherein the 1 st led further comprises:
an active layer formed on the 2 nd 1 st semiconductor layer; and
a4 th semiconductor layer formed on the active layer.
3. The semiconductor device of claim 1, wherein the gate electrode comprises any one or combination of the group consisting of tungsten, platinum, gold, nickel, aluminum, and/or the source electrode and the drain electrode comprise any one or combination of the group consisting of titanium, aluminum, nickel, gold, chromium.
4. The semiconductor device of claim 1, wherein the circuit pattern is formed on the substrate.
5. The semiconductor device of claim 1, wherein the rectifying diodes 1, 2, 3, and 4 are schottky diodes and are formed on the substrate.
6. The semiconductor device of claim 1, wherein the rectifier diodes 1, 2, 3, and 4 are light emitting diodes and are formed on the substrate.
7. A light-emitting device, comprising:
the semiconductor assembly of claim 1; and
and the power supply is electrically connected with the 1 st light emitting diode and the 1 st current stabilizing unit through the circuit pattern.
8. The light-emitting device according to claim 7, wherein a gate electrode of the 1 st transistor is coupled to a source electrode of the 1 st transistor.
9. The light emitting device of claim 7, wherein the 1 st current stabilization unit further comprises a schottky diode electrically connected between the 1 st transistor and the power source, an anode electrode of the schottky diode being coupled to the source electrode of the 1 st transistor.
10. The light emitting device of claim 9, wherein the schottky diode is formed on the substrate.
11. The light-emitting device according to claim 7, wherein the 1 st current stabilization unit further comprises a2 nd transistor, the 2 nd transistor is electrically connected between the 1 st transistor and the power source, a drain electrode of the 2 nd transistor is coupled to a source electrode of the 1 st transistor, a gate electrode of the 2 nd transistor is coupled to a drain electrode of the 2 nd transistor, and a source electrode of the 2 nd transistor is coupled to the power source.
12. The light-emitting device according to claim 11, wherein a structure of the 2 nd transistor is the same as that of the 1 st transistor, and wherein the 2 nd transistor is formed over the substrate.
13. The light-emitting device according to claim 7, wherein the 1 st rectifying diode is electrically connected between the 1 st terminal of the power supply and the 1 st output terminal of the wheatstone bridge rectifying circuit, and an anode electrode of the 1 st rectifying diode is coupled to the 1 st terminal of the power supply; the 2 nd rectifying diode is electrically connected between the 2 nd end of the power supply and the 1 st output end of the Wheatstone bridge rectifying circuit, and the anode electrode of the 2 nd rectifying diode is coupled with the 2 nd end of the power supply; the 3 rd rectifying diode is electrically connected between the 2 nd output end of the Wheatstone bridge rectifying circuit and the 2 nd end of the power supply, and an anode electrode of the 3 rd rectifying diode is coupled with the 2 nd output end of the Wheatstone bridge rectifying circuit; and the 4 th rectifier diode is electrically connected between the 2 nd output end of the Wheatstone bridge rectifier circuit and the 1 st end of the power supply, and the anode electrode of the 4 th rectifier diode is coupled with the 2 nd output end of the Wheatstone bridge rectifier circuit, wherein the 1 st rectifier diode, the 2 nd rectifier diode, the 3 rd rectifier diode and the 4 th rectifier diode are light emitting diodes or Schottky diodes.
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