CN107039415A - Self-balancing diode device - Google Patents
Self-balancing diode device Download PDFInfo
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- CN107039415A CN107039415A CN201610969374.3A CN201610969374A CN107039415A CN 107039415 A CN107039415 A CN 107039415A CN 201610969374 A CN201610969374 A CN 201610969374A CN 107039415 A CN107039415 A CN 107039415A
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- 230000003068 static effect Effects 0.000 claims description 17
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- 230000005669 field effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
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- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
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Abstract
The invention discloses a self-balanced diode device, which comprises a substrate, a doped well region, at least one first conductive heavily doped fin and at least two second conductive heavily doped fins. The doped well region is arranged in the substrate, and the first conductive type heavily doped fin is arranged in the doped well region and arranged along the first direction and protrudes from the surface of the substrate. The second conductive type heavily doped fin is arranged in the doped well region and arranged along a second direction, and the second direction is intersected with the first direction. The second conductive heavily doped fins are respectively positioned on two different sides of the first conductive heavily doped fin and protrude from the surface of the substrate, and each second conductive heavily doped fin and the first conductive heavily doped fin are separated by a fixed distance.
Description
Technical field
The present invention relates to a kind of diode apparatus, and more particularly to a kind of self-balanced type diode apparatus.
Background technology
With the integrated level (integration of various electronic components (such as transistor, diode, resistance, electric capacity)
Density) gradually step up, semi-conductor industry has been subjected to Fast Growth.And it is minimum spy that integrated level, which improves topmost reason,
Size (minimum feature size) lasting reduction is levied, more elements just can be so integrated in a specific region.
However, smaller characteristic size may more cause more leakage currents occur.With smaller electronic component demand gradually
Increase, just needs to reduce the probability that leakage current occurs for semiconductor element.
With the progress of semiconductor technology, fin field-effect transistor (FinFET) has turned into leak electricity in reduction semiconductor element
A kind of effective scheme of stream.In fin field-effect transistor, its active region, which includes, protrudes from this fin field-effect transistor place
A drain, a channel region and a source electrode for the semiconductor substrate surface at place.The active region of fin field-effect transistor is a fin-shaped type
State (fin), its section may be a rectangle.In addition, for example same U-shaped (upside- of the brake structure of fin field-effect transistor
Down U), thus it has surround three sides of active region.In this way, the channel control for brake structure just can be strengthened.Therefore just may be used
Reduce the short channel effect of conventional planar transistor npn npn.Therefore, when fin field-effect transistor is when closing, its brake structure can be preferable
Ground control passage, to reduce leakage current.Semiconductor device including fin field-effect transistor is for the instantaneous (ESD of such as static discharge
Transient extra-high voltage pulse (high voltage spikes)) is extremely sensitive.Static discharge is due to electrostatic charge
Accumulation and produce along the repid discharge phenomenon between two objects.Because repid discharge will cause a relatively large electric current,
Therefore static discharge may destroy this semiconductor device.Led for example, U.S. Patent Publication No. US20070045736 discloses half
Body device, it includes a gate electrode, a first transistor and a second transistor, wherein the first transistor and second transistor
There is one first active region and one second active region respectively.First active region is perpendicular to gate electrode, the direction of the second active region
Favour gate electrode.First active region and the second active region can increase electronics and electronic mobility (mobility).However,
In this semiconductor device, any static discharge (ESD) protection device is not installed, this United States Patent (USP) does not also refer to ESD
Protection technique.
Therefore, the present invention is directed to above-mentioned puzzlement, a kind of self-balanced type diode apparatus is proposed, to solve the above problems.
The content of the invention
The main object of the present invention, is to provide a kind of self-balanced type diode apparatus, and it leads using at least 1 first
Electric type heavy doping fin and at least two second conductivity type heavy doping fins set up at least two diodes, wherein the first conductivity type is heavily doped
Miscellaneous fin is set in the first direction, and second direction of the second conductivity type heavy doping fin along intersecting first direction is set, and makes these two poles
Pipe discharges uniform static discharge (ESD) electric current, to reduce because semiconductor device is damaged caused by static discharge.
For up to above-mentioned purpose, the present invention provides a kind of self-balanced type diode apparatus, and it includes a substrate, an impure well
Area, at least one first conductivity type heavy doping fin, at least two second conductivity type heavy doping fins and an insulating barrier, this substrate are partly to lead
Structure base board, doped well zone is p-type doped well zone or n-type doping wellblock.Doped well zone is located in substrate, the first conductivity type heavy doping
Fin is located in doped well zone and set in the first direction, and is protruded above from the surface of substrate.Second conductivity type heavy doping fin is located at
Set in doped well zone and in a second direction, second direction intersects with first direction.Second conductivity type heavy doping fin is located at respectively
The different both sides of first conductivity type heavy doping fin, and protruded above from the surface of substrate.For example, second direction is perpendicular to first
Direction.Every one second conductivity type heavy doping fin and the first conductivity type heavy doping fin are separated by a fixed range, and doped well zone, first are led
Electric type heavy doping fin and the second conductivity type heavy doping fin-shaped are at least two diodes.Insulating barrier is located on the surface of substrate, and
Between the first conductivity type heavy doping fin and every one second conductivity type heavy doping fin.First conductivity type heavy doping fin is electrically connected with
First voltage end, the second conductivity type heavy doping fin is electrically connected with second voltage end, the voltage at first voltage end and second voltage end
Forward bias voltage drop diode, to produce at least two-way uniform electrostatic electric discharge (ESD) electric current and pass through diode.When the first conductivity type weight
When the fin that adulterates is N-type heavy doping fin, the second conductivity type heavy doping fin is p-type heavy doping fin, and first voltage end and second voltage
End is respectively low-voltage end and high voltage end.Or, when the first conductivity type heavy doping fin is p-type heavy doping fin, second is conductive
Type heavy doping fin is N-type heavy doping fin, and first voltage end and second voltage end are respectively high voltage end and low-voltage end.
In the first embodiment, the quantity of the second conductivity type heavy doping fin is more than 2, and insulating barrier is led between adjacent second
Between electric type heavy doping fin, and the quantity of the way of diode and static discharge current is all more than 2.Multiple first contact electrodes are set
In the top of the first conductivity type heavy doping fin with setting on side wall and insulating barrier and in a second direction, and it is electrically connected with first voltage
End.Two second contact electrodes are respectively arranged on the second conductivity type heavy doping positioned at the different both sides of the first conductivity type heavy doping fin
On the top of fin and side wall and on insulating barrier, and the second contact electrode is set in the first direction, and the second electricity is electrically connected with again
Pressure side.The quantity of first contact electrode is equal to the second conductivity type heavy doping fin positioned at every side of the first conductivity type heavy doping fin
Quantity.
Compared with first embodiment, second embodiment further clamps fin comprising one first heavy doping, and it is conductive with second
Type heavy doping fin belongs to same conductivity.First heavy doping clamp fin is located in doped well zone and set in a second direction, and with
First conductivity type heavy doping fin is from and from the rat of substrate.First conductivity type heavy doping fin has first end and second
End, the first heavy doping clamp fin adjacent first end and its immediate two the second conductivity type heavy doping fins.Insulating barrier is between
Between one heavy doping clamp fin the second conductivity type heavy doping fin adjacent thereto, and led between the first heavy doping clamp fin with first
Between electric type heavy doping fin, the second contact electrode is on top and the side wall that the first heavy doping clamps fin.
Compared with second embodiment, 3rd embodiment further clamps fin comprising one second heavy doping, and it is conductive with second
Type heavy doping fin belongs to same conductivity.Second heavy doping clamp fin is located in doped well zone and set in a second direction, and with
First conductivity type heavy doping fin is from and from the rat of substrate.Second heavy doping clamps adjacent second end of fin and its most connect
Two near the second conductivity type heavy doping fins.It is heavily doped that insulating barrier clamps fin the second conductivity type adjacent thereto between the second heavy doping
Between miscellaneous fin, and clamped between the second heavy doping between fin and the first conductivity type heavy doping fin, the second contact electrode is located at second
On the top and side wall of heavy doping clamp fin.
In the fourth embodiment, the quantity of the first conductivity type heavy doping fin is multiple, and insulating barrier is led between adjacent first
Between electric type heavy doping fin, and the quantity of diode and static discharge current is all more than 2.One first contact electrode is led located at first
The top of electric type heavy doping fin is electrically connected with first voltage end with setting on side wall and insulating barrier and in a second direction.It is multiple
Second contact electrode is uniformly arranged on the second conductivity type heavy doping fin positioned at the different both sides of the first conductivity type heavy doping fin
On top and side wall and on insulating barrier, and set in the first direction, and be electrically connected with second voltage end.First conductivity type weight
The quantity that the quantity of fin of adulterating contacts electrode equal to the second of the every side for being located at the first conductivity type heavy doping fin.
To make auditor more have further understanding and understanding, careful assistant to the architectural feature of the present invention and the effect reached
With preferred embodiment figure and cooperation detailed description, illustrate as after：
Brief description of the drawings
The circuit layout schematic diagram of the first embodiment for the self-balanced type diode apparatus that Fig. 1 provides for the present invention；
The structure sectional view of the A-A ' lines along Fig. 1 for the self-balanced type diode apparatus that Fig. 2 provides for the present invention；
The circuit layout schematic diagram of the second embodiment for the self-balanced type diode apparatus that Fig. 3 provides for the present invention；
The structure sectional view of the B-B ' lines along Fig. 3 for the self-balanced type diode apparatus that Fig. 4 provides for the present invention；
The circuit layout schematic diagram of the 3rd embodiment for the self-balanced type diode apparatus that Fig. 5 provides for the present invention；
The structure sectional view of the C-C ' lines along Fig. 5 for the self-balanced type diode apparatus that Fig. 6 provides for the present invention；
The circuit layout schematic diagram of the fourth embodiment for the self-balanced type diode apparatus that Fig. 7 provides for the present invention；
The structure sectional view of the D-D ' lines along Fig. 7 for the self-balanced type diode apparatus that Fig. 8 provides for the present invention.
Description of reference numerals：10- substrates；12- doped well zones；14- the first conductivity type heavy doping fins；The conductivity types of 16- second
Heavy doping fin；18- insulating barriers；20- first contacts electrode；22- second contacts electrode；The heavy doping of 24- first clamps fin；26-
Two heavy doping clamp fin.
Embodiment
The self-balanced type diode apparatus that the present invention is provided is as the ESD-protection structure needed in integrated circuit.
During electrostatic discharge (ESD) protection, in close at integrated circuit end points, for example, at output end and input endpoint, and power supply is supplied
An ESD protection circuit is formed at end.This ESD protection circuit provide a current discharge passage, with reduce due to
Semiconductor device is damaged caused by static discharge.
As shown in Figures 1 and 2.The first embodiment for the self-balanced type diode apparatus that the present invention is provided is described below.
First embodiment is led comprising a substrate 10, a doped well zone 12, at least one first conductivity type heavy doping fin 14, at least two second
Electric type heavy doping fin 16, an insulating barrier 18, multiple first contact electrodes 20 contact electrode 22 with two second.Doped well zone 12,
First conductivity type heavy doping fin 14 and the second conductivity type heavy doping fin 16 at least two diodes of formation, it is equal to discharge at least two-way
Even static discharge current.In the first embodiment, the quantity of the first conductivity type heavy doping fin 14 is 1, the second conductivity type heavy doping
The quantity of fin 16, diode and static discharge current is all more than 2.
Substrate 10 is semiconductor substrate, and doped well zone 12 is p-type doped well zone or n-type doping wellblock.Doped well zone 12 is set
In substrate 10, the first conductivity type heavy doping fin 14 is located in doped well zone 12 and set in the first direction, and from substrate 10
Surface is protruded above.Second conductivity type heavy doping fin 16 is located in doped well zone 12, and is set in a second direction, second direction and the
Intersect in one direction.Second conductivity type heavy doping fin 16 is located at the different both sides of the first conductivity type heavy doping fin 14 respectively, and from base
The surface of plate 10 is protruded above.For example, second direction is perpendicular to first direction.Every one second conductivity type heavy doping fin 16 and
One conductivity type heavy doping fin 14 is separated by a fixed range.Insulating barrier 18 is located on the surface of substrate 10, and between the first conductivity type
Between heavy doping fin 14 and every one second conductivity type heavy doping fin 16, and between the second adjacent conductivity type heavy doping fin 16 it
Between.First contact electrode 20 is on top and the side wall and insulating barrier 18 of the first conductivity type heavy doping fin 14, and along second party
To setting, and it is electrically connected with first voltage end V1.First conductivity type heavy doping fin 14 is electrically connected with by the first contact electrode 20
First voltage end V1.Second contact electrode 22 is respectively arranged on leads positioned at the second of the different both sides of the first conductivity type heavy doping fin 14
On the top of electric type heavy doping fin 16 and side wall, and on insulating barrier 18, and the second contact electrode 22 is set in the first direction,
Second voltage end V2 is electrically connected with again.Second conductivity type heavy doping fin 16 is electrically connected with second voltage by the second contact electrode 22
Hold V2.The quantity of the first contact electrode 20 is equal to the second conductivity type weight positioned at every side of the first conductivity type heavy doping fin 14 again
The quantity of doping fin 16.
First voltage end V1 and second voltage end V2 voltage forward bias voltage drop diode, to produce uniform electrostatic electric discharge
(ESD) electric current is by diode, and then reduces because semiconductor device is damaged caused by static discharge.Therefore, first is conductive
When type heavy doping fin 14 is N-type heavy doping fin, the second conductivity type heavy doping fin 16 is p-type heavy doping fin, and first voltage end V1
It is respectively low-voltage end and high voltage end with second voltage end V2.Or, the first conductivity type heavy doping fin 14 is p-type heavy doping fin
When, the second conductivity type heavy doping fin 16 is N-type heavy doping fin, and first voltage end V1 and second voltage end V2 is respectively high voltage
End and low-voltage end.
As shown in Figure 3 and Figure 4.The second embodiment for the self-balanced type diode apparatus that the present invention is provided is described below.
Compared with first embodiment, second embodiment further clamps fin 24 comprising one first heavy doping, and it is heavily doped with the second conductivity type
Miscellaneous fin 16 belongs to same conductivity.First heavy doping clamp fin 24 is located in doped well zone 12, and sets in a second direction, and with
First conductivity type heavy doping fin 14 is from and from the rat of substrate 10.First conductivity type heavy doping fin 14 has first end
With the second end, the first heavy doping clamp adjacent first end of fin 24 and its immediate two the second conductivity type heavy doping fins 16.Absolutely
Edge layer 18 is clamped between the first heavy doping between the second conductivity type heavy doping fin 16 adjacent thereto of fin 24, and heavily doped between first
Between the miscellaneous clamp conductivity type heavy doping fin 14 of fin 24 and first, the second contact electrode 22 clamps the top of fin 24 located at the first heavy doping
In portion and side wall.First heavy doping clamps fin 24 and is electrically connected with second voltage end V2 by the second contact electrode 22.It is real second
Apply in example, doped well zone 12, the first conductivity type heavy doping fin 14, the second conductivity type heavy doping fin 16 and the first heavy doping clamp fin
24 form multiple diodes, to discharge multichannel uniform electrostatic discharge current, to reduce due to semiconductor caused by static discharge
Device is damaged.
As shown in figs. 5 and 6.The 3rd embodiment for the self-balanced type diode apparatus that the present invention is provided is described below.
Compared with second embodiment, 3rd embodiment further clamps fin 26 comprising one second heavy doping, and it is heavily doped with the second conductivity type
Miscellaneous fin 16 belongs to same conductivity.Second heavy doping clamps 26 fins and is located in doped well zone 12, and sets in a second direction, and with
First conductivity type heavy doping fin 14 is from and from the rat of substrate 10.Second heavy doping adjacent second end of clamp fin 26 and
Its immediate two second conductivity type heavy doping fin 16.Insulating barrier 18 clamps adjacent thereto the of fin 26 between the second heavy doping
Between two conductivity type heavy doping fins 16, and between the second heavy doping clamp conductivity type heavy doping fin 14 of fin 26 and first, the
Two contact electrodes 22 are on top and the side wall that the second heavy doping clamps fin 26.Second heavy doping clamp fin 26 connects by second
Touched electrode 22 is electrically connected with second voltage end V2.In the third embodiment, doped well zone 12, the first conductivity type heavy doping fin 14,
Second conductivity type heavy doping fin 16, the first heavy doping clamp fin 24 and second heavy doping clamp fin 26 form multiple diodes, with
Multichannel uniform electrostatic discharge current is discharged, to reduce because semiconductor device is damaged caused by static discharge.
As illustrated in figs. 7 and 8.The fourth embodiment for the self-balanced type diode apparatus that the present invention is provided is described below.
Fourth embodiment includes a substrate 10, a doped well zone 12, multiple first conductivity type heavy doping fins 14, two the second conductivity type weights
Doping fin 16, an insulating barrier 18, one first contact electrode 20 contact electrode 22 with multiple second.Doped well zone 12, first is conductive
Type heavy doping fin 14 and the second conductivity type heavy doping fin 16 form multiple diodes, to discharge multichannel uniform electrostatic discharge current.
Substrate 10 is semiconductor substrate, and doped well zone 12 is p-type doped well zone or n-type doping wellblock.Doped well zone 12 is set
In substrate 10, the first conductivity type heavy doping fin 14 is located in doped well zone 12, and is set in the first direction, and from substrate 10
Surface is protruded above.Second conductivity type heavy doping fin 16 is located in doped well zone 12, and is set in a second direction, second direction and the
Intersect in one direction.Second conductivity type heavy doping fin 16 is located at the different both sides of the first conductivity type heavy doping fin 14 respectively, and from base
The surface of plate 10 is protruded above.For example, second direction is perpendicular to first direction.Every one second conductivity type heavy doping fin 16 and
One conductivity type heavy doping fin 14 is separated by a fixed range.Insulating barrier 18 is led on the surface of substrate 10 between every 1 first
Between electric type heavy doping fin 14 and every one second conductivity type heavy doping fin 16, and between the first adjacent conductivity type heavy doping fin 14
Between.First contact electrode 20 is on top and the side wall and insulating barrier 18 of the first conductivity type heavy doping fin 14, and along second
Direction is set, and is electrically connected with first voltage end V1.First conductivity type heavy doping fin 14 contacts electrode 20 through first and electrically connected
Meet first voltage end V1.Second contact electrode 22 is uniformly located at second positioned at the different both sides of the first conductivity type heavy doping fin 14
On the top of conductivity type heavy doping fin 16 and side wall, and on insulating barrier 18, and the second contact electrode 22 is set in the first direction
Put, second voltage end V2 is electrically connected with again.Second conductivity type heavy doping fin 16 contacts electrode 22 through second and is electrically connected with second
Voltage end V2.The quantity of the first conductivity type heavy doping fin 14 is equal to the positioned at every side of the first conductivity type heavy doping fin 14 again
The quantity of two contact electrodes 22.
First voltage end V1 and second voltage end V2 voltage forward bias voltage drop diode, to produce uniform electrostatic discharge current
By diode, and then reduce because semiconductor device is damaged caused by static discharge.Therefore, the first conductivity type heavy doping fin
14 when being N-type heavy doping fin, and the second conductivity type heavy doping fin 16 is p-type heavy doping fin, and first voltage end V1 and second voltage
It is respectively low-voltage end and high voltage end to hold V2.Or, when the first conductivity type heavy doping fin 14 is p-type heavy doping fin, second leads
Electric type heavy doping fin 16 is N-type heavy doping fin, and first voltage end V1 and second voltage end V2 is respectively high voltage end and low electricity
Pressure side.
In summary, the present invention sets up uniform quiet using the first conductivity type heavy doping fin and the second conductivity type heavy doping fin
Discharge of electricity electric current, wherein the first conductivity type heavy doping fin is set in the first direction, the second conductivity type heavy doping fin edge intersecting first
The second direction in direction is set, to reduce because semiconductor device is damaged caused by static discharge.
A preferred embodiment of the present invention is the foregoing is only, not for limiting the scope that the present invention is implemented, therefore is lifted
Equivalent changes and modifications carried out by all shape, construction, feature and spirit according to described in scope of the invention as claimed, all should include
In in protection scope of the present invention.
Claims (14)
1. a kind of self-balanced type diode apparatus, it is characterised in that include：
One substrate；
One doped well zone, in the substrate；
At least one first conductivity type heavy doping fin, is set in the doped well zone and in the first direction, and from the table of the substrate
Face is protruded above；And
At least two second conductivity type heavy doping fins, are set in the doped well zone and in a second direction, the second direction with
The first direction intersects, and the plurality of second conductivity type heavy doping fin is located at the different both sides of the first conductivity type heavy doping fin respectively
And protruded above from the surface of the substrate, each second conductivity type heavy doping fin is separated by one with the first conductivity type heavy doping fin
Fixed range, the doped well zone, the first conductivity type heavy doping fin and the plurality of second conductivity type heavy doping fin-shaped are at least two
Individual diode, the first conductivity type heavy doping fin is electrically connected with first voltage end, and the plurality of second conductivity type heavy doping fin is electrical
Connect second voltage end, the plurality of diode of voltage forward bias voltage drop at the first voltage end and the second voltage end, to produce extremely
Few two-way uniform electrostatic discharge current simultaneously passes through the plurality of diode.
2. self-balanced type diode apparatus according to claim 1, it is characterised in that adulterated for p-type the doped well zone
Wellblock or n-type doping wellblock.
3. self-balanced type diode apparatus according to claim 1, it is characterised in that when the first conductivity type heavy doping
When fin is N-type heavy doping fin, the plurality of second conductivity type heavy doping fin is p-type heavy doping fin, and the first voltage end with this
Two voltage ends are respectively low-voltage end and high voltage end；It is the plurality of when the first conductivity type heavy doping fin is p-type heavy doping fin
Second conductivity type heavy doping fin is N-type heavy doping fin, and the first voltage end and the second voltage end be respectively high voltage end with
Low-voltage end.
4. self-balanced type diode apparatus according to claim 1, it is characterised in that the first direction perpendicular to this
Two directions.
5. self-balanced type diode apparatus according to claim 1, it is characterised in that also comprising an insulating barrier, it sets
In on the surface of the substrate and between the first conductivity type heavy doping fin and each second conductivity type heavy doping fin.
6. self-balanced type diode apparatus according to claim 5, it is characterised in that the second conductivity type heavy doping fin
Quantity be more than two, and the insulating barrier is between adjacent the plurality of second conductivity type heavy doping fin, the diode with should
The quantity of the way of static discharge current is all more than 2.
7. self-balanced type diode apparatus according to claim 6, it is characterised in that also include：
Multiple first contacts electrodes, on the top of the first conductivity type heavy doping fin and side wall and the insulating barrier, and along this
Second direction is set, and is electrically connected with the first voltage end；And
Two second contact electrodes, be respectively arranged on the top of the plurality of second conductivity type heavy doping fin positioned at the different both sides with
On the wall of side, and on the insulating barrier, and the plurality of second contact electrode set along the first direction and be electrically connected with this second
Voltage end.
8. self-balanced type diode apparatus according to claim 7, it is characterised in that the plurality of first contact electrode
Quantity is equal to the quantity of the second conductivity type heavy doping fin positioned at each side of the first conductivity type heavy doping fin.
9. self-balanced type diode apparatus according to claim 7, it is characterised in that also comprising one first heavy doping pincers
Position fin, it belongs to same conductivity with the second conductivity type heavy doping fin, and first heavy doping clamp fin is located at the doped well zone
In and set along the second direction, and with the first conductivity type heavy doping fin from and from the rat of the substrate, this
One conductivity type heavy doping fin has first end and the second end, and first heavy doping clamps the adjacent first end of fin and its immediate
Two the second conductivity type heavy doping fins, the insulating barrier clamps fin second conductivity type adjacent thereto between first heavy doping
Clamped between heavy doping fin and between first heavy doping between fin and the first conductivity type heavy doping fin, the plurality of second contact
Electrode is on top and the side wall that first heavy doping clamps fin.
10. self-balanced type diode apparatus according to claim 9, it is characterised in that also comprising one second heavy doping
Fin is clamped, it belongs to same conductivity with the second conductivity type heavy doping fin, second heavy doping clamp fin is located at the impure well
Set in area and along the second direction, and with the first conductivity type heavy doping fin from, and from the rat of the substrate, this
Second heavy doping clamps adjacent second end of fin and its immediate two the second conductivity type heavy doping fins, the insulating barrier between
Between second heavy doping clamp fin the second conductivity type heavy doping fin adjacent thereto and clamp fin between second heavy doping
Between the first conductivity type heavy doping fin, the plurality of second contact electrode clamps the top and side of fin located at second heavy doping
On wall.
11. self-balanced type diode apparatus according to claim 5, it is characterised in that the first conductivity type heavy doping
The quantity of fin is multiple, and the insulating barrier is between adjacent the first conductivity type heavy doping fin, and the diode and the electrostatic
The quantity of the way of discharge current is all more than 2.
12. self-balanced type diode apparatus according to claim 11, it is characterised in that also include：
One first contact electrode, on the top of the plurality of first conductivity type heavy doping fin and side wall and the insulating barrier and along this
Second direction is set, and is electrically connected with the first voltage end；
Multiple second contact electrodes, are uniformly arranged on the top and side of the second conductivity type heavy doping fin positioned at the different both sides
On wall and on the insulating barrier, and set along the first direction, and be electrically connected with the second voltage end.
13. self-balanced type diode apparatus according to claim 12, it is characterised in that the plurality of first conductivity type weight
The quantity of doping fin is equal to the plurality of second contact electrode positioned at each side of the plurality of first conductivity type heavy doping fin
Quantity.
14. self-balanced type diode apparatus according to claim 1, it is characterised in that the substrate is semiconductor substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105126150 | 2016-08-16 | ||
| TW105126150A TWI614873B (en) | 2016-08-16 | 2016-08-16 | Self-balanced diode device |
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| Publication Number | Publication Date |
|---|---|
| CN107039415A true CN107039415A (en) | 2017-08-11 |
| CN107039415B CN107039415B (en) | 2019-08-30 |
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|---|---|---|---|
| CN201610969374.3A Active CN107039415B (en) | 2016-08-16 | 2016-10-27 | self-balancing diode device |
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| TW (1) | TWI614873B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11742342B2 (en) | 2020-06-09 | 2023-08-29 | Samsung Electronics Co., Ltd. | FinFET ESD device with fin-cut isolation region |
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| US11742342B2 (en) | 2020-06-09 | 2023-08-29 | Samsung Electronics Co., Ltd. | FinFET ESD device with fin-cut isolation region |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI614873B (en) | 2018-02-11 |
| TW201807800A (en) | 2018-03-01 |
| CN107039415B (en) | 2019-08-30 |
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