CN107039309A - Chuck pin, the method and substrate board treatment for manufacturing chuck pin - Google Patents
Chuck pin, the method and substrate board treatment for manufacturing chuck pin Download PDFInfo
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- CN107039309A CN107039309A CN201611027478.9A CN201611027478A CN107039309A CN 107039309 A CN107039309 A CN 107039309A CN 201611027478 A CN201611027478 A CN 201611027478A CN 107039309 A CN107039309 A CN 107039309A
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- film
- chuck pin
- substrate
- fluoride
- support unit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The present invention relates to chuck pin, the method for manufacture chuck pin and substrate board treatment.According to the embodiment of the present invention, the substrate board treatment includes：Container, the container has processing space on the inside of it；Support unit, the support unit is in substrate described in the inner support of the processing space；And liquid supplying unit, supporting substrate from the liquid supplying unit to the support unit provide solution.The support unit includes placing the supporting plate of the substrate thereon and is arranged in the supporting plate with the chuck pin for the side for supporting the substrate.The chuck pin includes body and the first film on the surface of the body, and first film is arranged to carbofrax material.
Description
Technical field
The present invention disclosed herein is related to chuck pin, the method for manufacture chuck pin and processing substrate dress for supporting substrate
Put.
Background technology
Generally, in the method for manufacturing flat-panel monitor or semiconductor devices, in processing glass substrate or chip phase
Between carry out various techniques, such as photoresist coating processes, developing process, etch process and cineration technics.
Especially, as semiconductor devices becomes with high density, high integration and high-performance, the miniaturization of circuit pattern
Rapidly occur, therefore be present in pollutant particle, organic pollution, metal pollutant of substrate surface etc. leveraging
Productivity ratio and device property.Therefore so that the cleaning for removing the various pollutants for being attached to substrate surface turns into half
Important process in conductor manufacturing process, and carry out base before and after each cell processes of semiconductor fabrication process
Plate is cleaned.
Meanwhile, cleaning procedure uses the treatment fluid of chemicals etc..But, chemicals frequently directly contacts processing substrate
The part of device.When repeating manufacturing process, the part of substrate board treatment is damaged by chemicals and needs periodic replacement.
Especially, the chuck pin of supporting substrate is directly contacted with substrate, thus during substrate processing process directly with change
Product are contacted.Therefore, chuck pin has faster chemicals spoilage than other parts.When chuck pin is damaged, it is necessary to change
Chuck pin, and because chuck pin is frequently damaged, therefore the replacement cycle accelerates.
The content of the invention
Embodiments of the present invention provide the chuck pin with good corrosion resistance and durability, manufacture chuck pin
Method and substrate board treatment.
In addition, embodiments of the present invention provide a kind of chuck pin, it can be by strengthening its corrosion resistance and durable
Property and the factor for minimizing the particle produced during substrate processing process；Manufacture the method and processing substrate dress of chuck pin
Put.
Embodiments of the present invention are not limited to hereafter, and those skilled in the art are appreciated that the present invention from following description
Other purposes.
Embodiments of the present invention provide a kind of substrate board treatment.
According to the embodiment of the present invention, substrate board treatment includes：Container, the container has processing empty on the inside of it
Between；Support unit, support unit supporting substrate in the processing space；And liquid supplying unit, the liquid supply
Unit provides solution to by the substrate of the support unit supports, wherein the support unit includes placing the base thereon
The supporting plate of plate and it is arranged on the chuck pin that the support unit sentences the side for supporting the substrate, and wherein described chuck
Pin includes body and the first film set on the surface of the body with carbofrax material.
According to embodiment, first film passes through chemical vapor deposition (CVD) formation.
According to embodiment, the solution is hydrofluoric acid, sulfuric acid, phosphoric acid or its mixture.
According to embodiment, the chuck pin also includes forming the second film on the surface of first film, and
And wherein described second film is arranged to fluoride film.
According to the embodiment of the present invention, a kind of chuck pin of the side of supporting substrate includes：Body；With the first film,
First film is arranged to carbofrax material on the surface of the body.
According to embodiment, first film passes through chemical vapor deposition (CVD) formation.
According to embodiment, the chuck pin is additionally included in the second film on the surface of first film, and its
Described in the second film be arranged to fluoride film.
According to the embodiment of the present invention, a kind of method of the chuck pin for the side for manufacturing supporting substrate, including：In body
Surface on form the first film set with carbofrax material, wherein first film passes through chemical vapor deposition (CVD)
Formed.
According to embodiment, methods described, which is additionally included in be formed on the surface of first film, is set to fluoride film
The second film.
According to embodiment, the fluoride film by the surface of the fluoride and first film it
Between formed covalent bond and formed.
According to embodiment, methods described is additionally included in form the fluoride film before first film institute
State and defect is formed on surface.
According to embodiment, the defect is shape by using the surface of the first film described in acid or alkaline solution treatment
Into, and wherein described fluoride film is to supply fluoride and shape by the surface of the first film after this treatment
Into.
The purpose of present inventive concept is not limited to the effect above.Those skilled in the art can be with from following explanation and the application
Understand other purposes of present inventive concept.
Brief description of the drawings
Fig. 1 is the plan of substrate board treatment according to the embodiment of the present invention.
Fig. 2 is the cross section of the substrate board treatment being arranged in Fig. 1 process chamber according to the embodiment of the present invention
Figure.
Fig. 3 is the front view of Fig. 2 chuck pin.
Fig. 4 is the cross-sectional view of the chuck pin of Fig. 3 from A-A directions.
Fig. 5 is the front view of another embodiment of Fig. 3 chuck pin.
Fig. 6 is the cross-sectional view of the chuck pin of Fig. 5 from B-B directions.
Fig. 7 is schematically illustrated in the formation of fluoride film on Fig. 5 chuck pin.
Fig. 8 diagrammatically illustrates the surface bond in fluoride and Fig. 7 fluoride film.
Embodiment
It will be hereinafter described more fully with reference to the accompanying drawing that illustrated therein is some example embodiments various exemplary
Embodiment.However, the present invention can be implemented in different forms, and it should not be construed as limited to implementation described in this paper
Mode.And these embodiments are to provide with so that the disclosure will be thoroughly and completely, and will be to people in the art
Member fully passes on the scope of the present invention.Therefore, exaggerate the feature of accompanying drawing clearly to explain with prominent.
Fig. 1 is the plan of substrate board treatment according to the embodiment of the present invention.With reference to Fig. 1, substrate board treatment 1
Including indexable module 10 and process handling module 20.Indexable module 10 has load port 120 and delivery framework 140.Load terminal
Mouth 120, delivery framework 140 and process handling module 20 are sequentially arranged and embarked on journey.Hereinafter, by load port 120, delivery framework
140 and the direction that is set of process handling module be referred to as first direction 12.When overlooking, the direction of first direction 12 will be perpendicular to
Referred to as second direction 14, and the direction vertical with the plane including first direction 12 and second direction 14 is referred to as third direction
16。
Storing substrate W carrier 130 is located on load port 120.Load port 120 is arranged to multiple, and they
14 it is arranged in line in a second direction.In Fig. 1, describe and be provided with four load ports 120.However, being imitated according to such as technique
The requirement of the duty of rate and process handling module 20, can increase or decrease the quantity of load port 120.In carrier 130, carry
Multiple groove (not shown) are provided with supporting substrate W edge.Third direction 16 is provided with multiple grooves, and multiple substrate W edges
Third direction 16 is stackably placed in carrier vertically each other.Front openings standard container (FOUP) may be used as carrier 130.
Process handling module 20 includes buffer cell 220, transfer chamber 240 and process chamber 260.Transfer chamber 240 is configured to
So that its longitudinal direction is parallel with first direction 12.14 side for being arranged on transfer chamber 240 in a second direction respectively of process chamber 260
And opposite side.Process chamber 260 is symmetrically disposed in side and the opposite side of transfer chamber 240.Some edge transmission in process chamber 260
The longitudinal direction of room 240 is set.In addition, some in process chamber 260 are stackably placed vertically each other.That is, in transmission
The side of room 240, process chamber 260 can be arranged to A × B (A and B are 1 or bigger natural number) array.Here, A is along first
The number for the process chamber 260 that direction 12 is set, B is the number of the process chamber 260 set along third direction 16.When in transfer chamber
When 240 side sets four or six process chambers 260, process chamber 260 can be arranged to 2 × 2 arrays or 3 × 2 arrays.Processing
The number of room 260 can be increased or decreased.With above-mentioned difference, process chamber 260 can be provided only on the side of transfer chamber 240.This
Outside, with above-mentioned difference, process chamber 260 can be arranged to individual layer in the both sides of transfer chamber 240.
Buffer cell 220 is arranged between delivery framework 140 and transfer chamber 240.Buffer cell is provided in transfer chamber
Make the space of substrate W temporal persistences before transmitting substrate W between 240 and delivery framework 140.In the inside (example of buffer cell 220
Such as, inwall) it is provided with the groove (not shown) for placing substrate, and groove (not shown) is equipped with multiple, and they are along third direction
16 are spaced apart from each other.Buffer cell 220 towards the side of delivery framework 140 and buffer cell 220 towards delivery framework
140 opposite side is opening.
The transmission substrate W between buffer cell 220 and carrier 130 on load port 120 of delivery framework 140.
In delivery framework 140, indexable track 142 and position rotating mechanical hand 144 are provided with.Indexable track 142 is arranged to make its longitudinal direction side
To parallel to second direction 14.Position rotating mechanical hand 144 is arranged on indexable track 142, and along indexable track 142 in second party
Linearly moved on to 14.Position rotating mechanical hand 144 includes pedestal 144a, body 144b and indexable arm 144c.Pedestal 144a edges turn
Position track 142 is moveably mounted.Body 144b couples with pedestal 144a.Body 144b is movably disposed along third direction 16
On pedestal 144a.In addition, body 144b can be rotatably set on pedestal 144a.Indexable arm 144c couples with body 144b,
And it is configured to move forward and backward relative to body 144b.Indexable arm 144c is provided with multiple, and they are separately driven.
Indexable arm 144c is arranged vertically, i.e., be spaced apart from each other along third direction 16.When substrate W is sent into load from process handling module 20
When having 130, some in indexable arm 144c can be used, and when substrate W is sent into process handling module from carrier 130
Some in indexable arm 144c can be used when 130.By this way, substrate W phase is loaded into or set out in position rotating mechanical hand 144
Between, it can prevent that the particle from substrate is attached to the substrate after handling process before handling process.
Transfer chamber 240 transmits substrate W between process chamber 260 and buffer cell 220 and between process chamber 260.
Guide rail 242 and master manipulator 244 are provided with transfer chamber 240.Guide rail 242 is placed such that its longitudinal direction and first direction
12 is parallel.Master manipulator 244 is arranged on guide rail 242, and 12 is linearly moved in the first direction on guide rail 242.Main mechanical
Hand 244 includes pedestal 244a, body 244b and principal arm 244c.Pedestal 244a is moveably mounted along guide rail 242.Body 244b with
Pedestal 244a couples.Body 244b is movably disposed on pedestal 244a along third direction 16.In addition, body 244b is rotatable
Ground is arranged on pedestal 244a.Principal arm 244c couples with body 244b, and is configured to move forward and backward relative to body 244b.
Principal arm 244c is provided with multiple, and they are configured to be operated alone.Principal arm 244c is vertically provided, i.e. along third direction
16 are spaced apart from each other.When substrate W is sent into process chamber 260 from buffer cell 220, used principal arm 244c is with working as base
Plate W from process chamber 260 be sent to buffer cell 220 when used principal arm 244c can be different.
In process chamber 260, the substrate board treatment 300 that cleaning is carried out to substrate W is provided with.It is arranged at each
Manage substrate board treatment 300 in room 240 can the type based on cleaning procedure and with different structures.It is arranged at each
Substrate board treatment 300 in reason room 240 can have identical structure.In one embodiment, process chamber 260 can be by
It is divided into multiple groups, and the substrate board treatment 300 being arranged in same group of process chamber 260 can have identical structure, and
And be arranged on the substrate board treatment 300 in different groups of process chambers 260 and can have different structures.For example, when process chamber 260
When being divided into two groups, first group of process chamber 260 is arranged on the side of transfer chamber 240, and second group of process chamber 260 is arranged on transmission
The opposite side of room 240.In one embodiment, first group of process chamber 260 and second group of process chamber 260 are sequentially being transmitted with this
The side of room 240 and opposite side are stacked.Process chamber 260 can be according to the species or the type of cleaning procedure of used chemicals
And it is divided into multiple groups.
Hereinafter, as an example, description to be come to cleaning base plate W substrate board treatment 300 using treatment fluid.Fig. 2 is
According to the plan of the substrate board treatment of presently filed embodiment.With reference to Fig. 2, substrate board treatment 300 includes housing
310th, container 320, support unit 330, lifting unit 340, liquid supplying unit 360 and dissolved gas removal unit 400.
Housing 310 provides space on the inside of it.Container 320 is placed on the inside of housing 310.
Container 320 provides the processing space for carrying out substrate processing process.Container 320 has the upside of opening.Container includes
Interior collection vessel 322, intermediate collection vessel 324 and outer collection vessel 326.Each collection vessel 322,324,326 is collected in work
Treatment fluid different from each other in the treatment fluid used in skill.Interior collection vessel 322 is arranged to surround the ring of support unit 330
Shape.Intermediate collection vessel 324 is arranged to surround the annular of interior collection vessel 322.During outer collection vessel 326 is arranged to surround
Between collection vessel 324 annular.Inner space 322a, interior collection vessel 322 and the intermediate collection vessel of interior collection vessel 322
The gap 326a between gap 324a and intermediate collection vessel 324 and outer collection vessel 326 between 324 can be used separately as
Treatment fluid is flowed into the entrance in interior collection vessel 322, intermediate collection vessel 324 and outer collection vessel 326.In collection vessel
322nd, in 324,326, collection line 322b, 324b, the 326b for extending vertically downward to bottom are connected to.Collection line 322b,
324b, 326b discharge the treatment fluid flowed into by collection vessel 322,324,326 respectively.The treatment fluid of discharge can pass through outside
Treatment fluid regenerative system (not shown) be reused.
Support unit 330 is arranged on the inside of container 320.The supporting substrate W of support unit 330 and in the substrate processing process phase
Between rotary plate W.Support unit 330 includes supporting plate 332, supporting pin 334, chuck pin 400 and support shaft 338.When overlooking,
Supporting plate 332 has the upper surface for being usually arranged as circle.In the bottom of supporting plate 332, being fixedly connected with can by motor 339
The support shaft 338 of rotation.Supporting pin 334 is provided with multiple.On the edge of upper surface of multiple supporting pins 334 in supporting plate 332
It is spaced apart from each other and is projected upwards from supporting plate 332.Supporting pin 334 is usually disposed as having annular.334 support groups of supporting pin
Plate W dorsal part is so that it is spaced apart with the upper surface of supporting plate 332.
Chuck pin 400 is set to multiple.Chuck pin 400 is arranged to than supporting pin 334 further from supporting plate 332
The heart.Chuck pin 400 is configured to project upwards from supporting plate 332.The supporting substrate W of chuck pin 400 sidepiece (side) so that when
Substrate W will not be from correct position to lateral deviation when support unit 330 rotates.Chuck pin 400 is configured to along supporting plate 332
Radial direction linear movement between standby position and Support Position.Standby position is than Support Position further from supporting plate 332
Center.When substrate W is loaded on support unit 330 and unloads substrate W from support unit 330, and as processing substrate W
When, chuck pin 400 is placed in Support Position.Chuck pin 400 in Support Position is contacted with the sidepiece of substrate.
Fig. 3 is the front view of Fig. 2 chuck pin.Fig. 4 is the cross-sectional view of the Fig. 3 intercepted along line A-A chuck pin.Under
Wen Zhong, with reference to Fig. 3 and Fig. 4, chuck pin 400 includes the film 430 of body 410 and first.
First film 430 is formed on the surface in body 410.First film 430 is arranged to surround the table of chuck pin 400
Face.When chuck pin 400 is set to multiple, the first film 430 can be provided to multiple chuck pins 400.In this example, first
Film 430 can be configured to carborundum (SiC) material.First film 430 can be formed by chemical vapor deposition (CVD).
Fig. 5 is the front view of another embodiment of Fig. 3 chuck pin.Fig. 6 is the Fig. 5 intercepted along line B-B chuck pin
Cross-sectional view.Hereinafter, with reference to Fig. 5 and Fig. 6, chuck pin 400 includes body 410, the first film 430 and the second film
450。
First film 430 is formed on the surface in body 410.First film 430 is arranged to surround the table of chuck pin 400
Face.In this example, the first film 430 can be configured to carborundum (SiC) material.First film 430 can pass through chemical gas
Mutually deposition (CVD) formation.
Second film 450 is formed on the surface in the first film 430.Second film 450 is arranged to surround the first film
430 surface.In this example, the second film 450 can be configured to fluoride film.In this example, fluoride film can be with
Formed by making fluorine be covalently bound to the surface of the first film 430.Hereinafter, description fluoride film is arranged to the
Two films 450.
Fig. 7 is schematically illustrated in the formation of fluoride film on Fig. 5 chuck pin.Fig. 8 diagrammatically illustrates fluoride
With the surface bond in Fig. 7 fluoride film.Hereinafter, with reference to Fig. 7 and Fig. 8, forming the method for fluoride film includes
It is chemically treated on the surface of the first film 430.The first film 430 being made up of carbofrax material is chemically stable.
Accordingly, it may be desirable to be chemically treated to the surface of the first film 430.When on the surface of the first film 430 without chemistry
When processing ground provides fluoride, fluoride film may not be formed.
Chemical treatment to surface forms defect on the surface of carborundum.In this example, defect is formed on the surface
Chemical treatment to surface is included with acid or alkaline solution treatment surface.There is provided fluoride and via fluorine after processing surface
Compound covalent bond forms fluoride film on the surface.Fluoride passes through covalent bonding to the surface of the first film.
Referring again to Fig. 2, lifting unit 340 makes the linear movement along the vertical direction of container 320.As container is transported about 320
It is dynamic, Level Change of the container 320 relative to support unit 330.Lifting unit 320 includes support 342, kinematic axis 344 and driving
Device 346.
Support 342 is fixedly mounted on the outer wall of container 320.The kinematic axis 344 moved up and down by driver 346 with
Support 342 is fixedly connected.When substrate W is placed on support unit 330 or when substrate W is lifted from support unit 330, hold
Device 320, which declines, causes support unit 330 to be projected upwards from container 320.In addition, during processing, the height of control container 320,
So that making treatment fluid flow into predetermined collection vessel 322,324,326 according to the species for the treatment fluid being fed in substrate W.
In this example, during substrate W is handled with the first treatment fluid, substrate W is placed on and interior collection vessel 322
In height corresponding inner space 322a.In addition, when handling substrate W with second processing liquid and the 3rd treatment fluid, W points of substrate
The gap 324a that is not placed between interior collection vessel 322 and intermediate collection vessel 324 and in intermediate collection vessel 324
In the corresponding height of gap 326a between outer collection vessel 326.With above-mentioned difference, lifting unit 340 can make support list
Member 330 rather than container 320 are moved in the vertical direction.
When carrying out substrate W processing, liquid supplying unit 360 is to substrate W providing chemical liquids.
Liquid supplying unit 360 includes nozzle support portion 362, nozzle 364, support shaft 366 and driver 368.
Support shaft 366 is configured such that its longitudinal direction is parallel with third direction 16, and driver 368 and support shaft
366 bottom connection.Driver 368 makes the rotation of support shaft 366 and oscilaltion.Nozzle support portion 362 with the institute of driver 368
The relative end of the other end that is connected to is vertical with support shaft 366 to be coupled.Nozzle 364 is being connected to support shaft 366
The relative end of the other end is installed on the bottom in nozzle support portion 362.Nozzle 364 is moved to by driver 368 to be added
Station is put and standby position.Working position is the position for the vertical top that nozzle 364 is located at container 320, and standby position is spray
Mouth 364 is not at the position of the vertical top of container 320.Nozzle 364 to substrate W from outside supply liquid by supplying liquid
Body.
Liquid supplying unit 320 can be provided with one or more., can when liquid supplying unit 320 is provided with multiple
To pass through different the supplying chemical product of liquid supplying unit 360, flushing liquor or organic solvent.When liquid is provided as chemical liquid
During body, chemicals can be hydrofluoric acid, sulfuric acid, phosphoric acid or their mixture.Flushing liquor can be deionized water, You Jirong
Agent can be the mixed solution of inert gas and isopropanol gas or isopropanol liquid.
In the embodiment of the invention described above, the first film 340 is arranged on the surface of body 410 of chuck pin 400.
First film 430 forms film using CVD on the surface of body 410.CVD is used for the first film 430, the present invention can be carried
The corrosion resistance of high chuck pin 400.
According to result of the test, the corrosion resistance of the first film 430 formed by reaction sintering technology, which is less than, passes through CVD shapes
Into the first film 430 corrosion resistance.In addition, when by non-pressure sintering technology the first film 430 of formation, corrosion resistance is good
It is good, but manufacturing cost is expensive, and the band electrification of chuck pin 400 is low.Here, the band electrification of chuck pin 400 can be by making
Chuck pin 400 is grounded and electric charge occurred in substrate processing process etc. is transmitted into outside, to improve the effect of substrate processing process
Rate.However, test result indicates that, when by non-pressure sintering technology the first film 430 of formation, the band electrification of chuck pin 400 is low
Band electrification when by CVD the first films 430 of formation.
That is, compared with by reaction sintering technology, when by CVD the first films 430 of formation, corrosion resistance,
Durability and chemical resistance are preferable, and band electrification is more preferable compared with by non-pressure sintering technology.Applied when by CVD formation first
During film 430, it, which meets, is less than 105Ω electric property.The electric property of first film 430 can strengthen antistatic effect.
Therefore, the surface of chuck pin 400 of the invention can provide the first film 430 to improve chuck by using CVD
Corrosion resistance, durability and the chemical resistance of pin 400.In addition, the enhancing of corrosion resistance improves durability, so as to extend more
Change the cycle.
In addition, according to another embodiment of the present invention, the corrosion resistance of chuck pin 400 can be set to fluorine by providing
The second film 450 (being similar to the first film 430) of compound film and further enhance, and durability can also be strengthened.
In addition, the present invention forms the first film 430 or the second film 450 on the surface of chuck pin 400, so that by inciting somebody to action
The appearance for the particle that may be produced using the liquid used during substrate processing process from chuck pin 400 minimizes to improve base
The efficiency of plate handling process.
In the above-described embodiment, as an example, chuck pin is coated with the first film and the second film, but it is to be coated
Object is not limited to chuck pin.In this example, can be on any component for needing to strengthen corrosion resistance, durability and chemical resistance
Form film.
In addition, the material of chuck pin, the first film and the second film is not limited to above-mentioned embodiment.In this example, film can
To be the combination of carbofrax material film or carbofrax material and fluoride films.Here, carbofrax material film can pass through CVD shapes
Into.In addition, carbofrax material film and fluoride materials film can be with covalent bondings.
Aforementioned embodiments are the examples of the present invention.In addition, preferred embodiment only has shown and described in the above, and
And embodiment can include various combinations, change and situation.That is, it will be understood by those skilled in the art that not departing from
, can be in these embodiments in the case of appended claims and its equivalence limited range, principle and spirit
In be replaced, modifications and changes.In addition, being not intended to makes that scope of the present application is limited to these embodiments or its is specific
Feature or benefit.But, it is intended that scope of the present application is only limitted to appended claim and its equivalence.
Claims (12)
1. a kind of substrate board treatment, including：
Container, the container has processing space on the inside of it；
Support unit, support unit supporting substrate in the processing space；With
Liquid supplying unit, the liquid supplying unit provides solution to by the substrate of the support unit supports,
Wherein described support unit includes placing the supporting plate of the substrate thereon and being arranged on the support unit sentencing support
The chuck pin of the side of the substrate,
Wherein described chuck pin includes body and the first film set on the surface of the body with carbofrax material.
2. device according to claim 1, wherein first film passes through chemical vapor deposition (CVD) formation.
3. device according to claim 1, wherein the solution is hydrofluoric acid, sulfuric acid, phosphoric acid or its mixture.
4. device according to claim 1, is formed wherein the chuck pin is additionally included on the surface of first film
The second film, and wherein described second film is arranged to fluoride film.
5. a kind of chuck pin of the side of supporting substrate, including：
Body；With
The first film set on the surface of the body with carbofrax material.
6. chuck pin according to claim 5, wherein first film passes through chemical vapor deposition (CVD) formation.
7. chuck pin according to claim 5, wherein the chuck pin is additionally included on the surface of first film
Second film, and wherein described second film is arranged to fluoride film.
8. a kind of method of the chuck pin for the side for manufacturing supporting substrate, including：
The first film set with carbofrax material is formed on the surface of body；
Wherein described first film passes through chemical vapor deposition (CVD) formation.
9. method according to claim 8, is additionally included in formation on the surface of first film and is arranged to fluoride
Second film of film.
10. method according to claim 9, wherein the fluoride film in the fluoride and described first by applying
Covalent bond is formed between the surface of film and is formed.
11. method according to claim 10, is additionally included in before forming the fluoride film in first film
The surface on form defect.
12. method according to claim 11, wherein the defect is applied by using described in acid or alkaline solution treatment first
Formed by the surface of film, and wherein described fluoride film is the table by the first film after this treatment
Formed by face supply fluoride.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20150161252 | 2015-11-17 | ||
| KR10-2015-0161252 | 2015-11-17 | ||
| KR1020160002728A KR101817217B1 (en) | 2015-11-17 | 2016-01-08 | Chuck pin, Method for manufacturing a chuck pin, Apparatus for treating a substrate |
| KR10-2016-0002728 | 2016-01-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107039309A true CN107039309A (en) | 2017-08-11 |
Family
ID=59050839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611027478.9A Pending CN107039309A (en) | 2015-11-17 | 2016-11-17 | Chuck pin, the method and substrate board treatment for manufacturing chuck pin |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101817217B1 (en) |
| CN (1) | CN107039309A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102096967B1 (en) | 2017-11-24 | 2020-04-03 | (주)신우에이엔티 | Antistatic chuck pin, antistatic chuck body member and wafer handling unit comprising the antistatic chuck pin and the antistatic chuck body member |
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| US20020037801A1 (en) * | 2000-08-02 | 2002-03-28 | Takaomi Sugihara | SiC-formed material and method for manufacturing same |
| CN101395702A (en) * | 2006-03-03 | 2009-03-25 | 朗姆研究公司 | Methods and apparatus for selective pre-coating of a plasma processing chamber |
| KR20110116467A (en) * | 2010-04-19 | 2011-10-26 | 세메스 주식회사 | Spin head, apparatus for treating substrate, and method for treating substrate |
| US20130059987A1 (en) * | 2011-09-06 | 2013-03-07 | Advanced Composite Materials, Llc | Functionalized Silicon Carbide And Functionalized Inorganic Whiskers For Improving Abrasion Resistance Of Polymers |
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| JP2001015477A (en) | 1999-06-28 | 2001-01-19 | Toshiba Corp | Substrate-treating method and apparatus thereof |
| JP2002329694A (en) | 2001-04-26 | 2002-11-15 | Sony Corp | Equipment and method of processing substrate, and rotating member for holding substrate |
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- 2016-01-08 KR KR1020160002728A patent/KR101817217B1/en active IP Right Grant
- 2016-11-17 CN CN201611027478.9A patent/CN107039309A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4839244A (en) * | 1987-04-24 | 1989-06-13 | Nec Corporation | Magnetic recording medium with protective layer using graphite fluoride and method of producing same |
| US20020037801A1 (en) * | 2000-08-02 | 2002-03-28 | Takaomi Sugihara | SiC-formed material and method for manufacturing same |
| CN101395702A (en) * | 2006-03-03 | 2009-03-25 | 朗姆研究公司 | Methods and apparatus for selective pre-coating of a plasma processing chamber |
| KR20110116467A (en) * | 2010-04-19 | 2011-10-26 | 세메스 주식회사 | Spin head, apparatus for treating substrate, and method for treating substrate |
| US20130059987A1 (en) * | 2011-09-06 | 2013-03-07 | Advanced Composite Materials, Llc | Functionalized Silicon Carbide And Functionalized Inorganic Whiskers For Improving Abrasion Resistance Of Polymers |
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| KR20170057804A (en) | 2017-05-25 |
| KR101817217B1 (en) | 2018-01-12 |
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