CN107039179A - A kind of chip capacitor element electrode manufacture method - Google Patents

A kind of chip capacitor element electrode manufacture method Download PDF

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Publication number
CN107039179A
CN107039179A CN201610079706.0A CN201610079706A CN107039179A CN 107039179 A CN107039179 A CN 107039179A CN 201610079706 A CN201610079706 A CN 201610079706A CN 107039179 A CN107039179 A CN 107039179A
Authority
CN
China
Prior art keywords
chip capacitor
capacitor element
manufacture method
element electrode
electrode manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610079706.0A
Other languages
Chinese (zh)
Inventor
倪学锋
林浩
姜胜宝
黄林
国江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
State Grid Corp of China SGCC
China Electric Power Research Institute Co Ltd CEPRI
Original Assignee
State Grid Corp of China SGCC
China Electric Power Research Institute Co Ltd CEPRI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by State Grid Corp of China SGCC, China Electric Power Research Institute Co Ltd CEPRI filed Critical State Grid Corp of China SGCC
Priority to CN201610079706.0A priority Critical patent/CN107039179A/en
Publication of CN107039179A publication Critical patent/CN107039179A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/228Terminals
    • H01G4/232Terminals electrically connecting two or more layers of a stacked or rolled capacitor

Abstract

The present invention provides a kind of chip capacitor element electrode manufacture method, and methods described includes:I, shaping;II, the reserved blank tape on molding part;III, generation electrode film.The present invention stays insulating isolation belt one direction opening mode to carry out electrode spraying or evaporation coating technique using one side;The string of noninductive different capacitors element, parallel-connection structure can be obtained by different laminating method and welding method;Effectively reach engineer applied, the particularly suitable pulsed discharge occasion for requiring the low inductance of capacitor makes chip capacitor have an easy design, compact conformation, take up an area the outstanding advantages such as small, easy to use, power characteristic is good.

Description

A kind of chip capacitor element electrode manufacture method
Technical field
The present invention relates to a kind of manufacture method of capacitor, in particular to a kind of chip capacitor element electrode manufacturer Method.
Background technology
Chip capacitor is usually ceramic capacitor.Capacitor is welded on electrode film by condenser dielectric piece, electrode film Two lead-out wires and outsourcing insulation constitute (as shown in Figure 1), the structure and manufacture craft of this capacitor simply, But its series-parallel system can only be connected by outside lead and completed;Another is the capacitor shown in Fig. 2, the folded post of circle.
This kind of capacitor is adapted to closed assembly series connection, but can not be in parallel.Because element serial number determines condenser voltage, element is simultaneously Join number and determine condenser capacity, therefore, the capacity of this capacitor is generally done less, if capacity done greatly, just only Can outside multicolumn parallel connection.This not only makes connection complicated, and space hold is big, and wiring inductance is big, and power characteristic is poor.This The occasion that requiring capacitor for some has high voltage, Large Copacity, noninductive, high power characteristic, the small requirement of duty is difficult to It is applicable.
High pulse power technology have developed rapidly, and often require that capacitor line is most short, and inductive impedance is minimum, compact conformation, account for Ground is small, power density is big.Therefore, capacitor element is compact, easily connection method for development, is to reach this requirement most to have The method of effect.
The content of the invention
The invention provides a kind of method for making its electrode of chip capacitor element, allow chip capacitor element simpler Ground carries out connection in series-parallel and connects and composes capacitor module, so as to reach that capacitor arrangement is compact, wiring inductance is minimum, height mould Block, standardize, take up an area the characteristics of small, reliability is high, the power characteristic of capacitor is improved to greatest extent, for up to this Purpose, the present invention uses following technical scheme.
By the compacting of the dielectric material of chip capacitor or quadrangularly or other shapes thin slice are drawn, then in this quadrangle the Three edges in one face, the blank tape of reserved one fixed width is used to be dielectrically separated from, and the width of this blank tape is according to monolithic The height of capacitor unit voltage determines that more greatly, the low then width of voltage is smaller for the high then width of voltage, to improve the profit of material With rate, the cell capacitance amount voltage of chip capacitor is unsuitable too high, thus the width of blank tape for 0.1 to 10 millimeters ( Can be wider).Dielectric surface outside blank tape is deposited or sprayed or adhesive electrode film, and second face of the medium is protected Cleaning is held, Electrode treatment is not done, the electrode of such a chip capacitor element is to complete.For other shapes of Thin slice is also to reserve an electrode in first face to draw side, and the blank tape of the reserved one fixed width in edge on other sides is left no room for manoeuvre Edge isolation strip.The equal electrode evaporation material of other parts in addition to blank tape is the system for completing a chip capacitor element Make.
Multiple capacitor elements are connected in series or in parallel, constitute sheet type modularized capacitor.
Particularly the present invention reserves an electrode in first face of condenser dielectric piece and draws side, and the edge on other sides is pre- The blank tape of one fixed width is stayed to do insulating isolation belt, the width of blank tape changes because of voltage levels, voltage Gao Zekuan is low Then narrow, the thickness of electrode film is 0.5 to 1.0 microns.
Particularly electrode film of the invention is arranged on a face of condenser dielectric.
Particularly electrode of the invention is to make whole evaporations of the unreserved isolation strip in first face by evaporation or electrostatic spraying Upper or electrostatic spraying upper electrode material, is deposited or the thickness of coating electrode then flows through electric current phase with capacitance and capacitor Close, general capacitance is bigger, flow through that electric current is bigger, then electrode requires thicker.
The material of particularly electrode film of the invention is metal material, diamond or graphite.
Particularly metal material of the invention include at least one of titanium, tungsten, platinum, cobalt, copper, nickel, Jin Hexi or it Between at least one alloy for being combined.
Specifically evaporation of the invention uses vacuum evaporation.
Specifically vacuum evaporation of the invention includes:
(1) molding part is subjected to ultrasonic wave cleaning, Ran Hougan in alcohol or any of propyl alcohol or cyclohexanone solvent It is dry;
(2) blank tape is covered with mould;
(3) molding part is put into deposited chamber to be deposited;
(4) molding part after evaporation is carried out being cooled to normal temperature.
Specifically vacuum of the invention is 1 × 102~1 × 10-6Pa。
With immediate prior art ratio, the technical scheme that the present invention is provided has following excellent effect:
1st, the present invention stays insulating isolation belt one direction opening mode to carry out electrode spraying or evaporation coating technique using one side.
2nd, the present invention can by different laminating method and welding method the string for obtaining different capacitors element, and be coupled Structure.
3rd, the present invention is that the voltage and capacity of chip capacitor reach the effective means of engineer applied, makes sheet capacitor utensil There is an easy design, compact conformation, inductance value are minimum, the outstanding advantages such as good that take up an area small, easy to use, power characteristic.
Brief description of the drawings
Fig. 1 is common chip ceramic capacitor structure schematic diagram;
Fig. 2 is the cylindrical lamination schematic diagram of ceramic capacitor;
Fig. 3 is compacting or draws chip capacitor dieelctric sheet schematic diagram;
Fig. 4 is to make three side isolation strip schematic diagrames according to voltage;
Fig. 5 is evaporation or sprays out electrode schematic diagram;
Fig. 6 is the schematic diagram in chip capacitor element B faces;
Fig. 7 is circle chip capacitor element A faces schematic diagram
Fig. 8 is circle chip capacitor element B faces schematic diagram;
Wherein:1- condenser dielectric pieces, 2- electrode coatings, 3- contact conductors, 4- outsourcing insulations, 5- insulating isolation belts.
Embodiment
The preparation method of the present invention is clearly and completely described below in conjunction with accompanying drawing.
First rectangular sheet shown in Fig. 3 is suppressed or be drawn into the material for making condenser dielectric as design requirement, then use mould Or other methods are covered the isolation region on three sides of rectangular sheet by Fig. 4, then to rectangular sheet carry out metal evaporation or Spraying, formed the region-wide overlying in addition to region is isolated cover continuously, extremely close metal electrode layer, and complete Fig. 5 Shown electrode production process.Cleaning state of insulation (such as Fig. 6 is kept for the another side (B) of chip capacitor element It is shown), then chip capacitor element is that announcement completes.
Chip capacitor element media shape of the present invention does not terminate in rectangle, and other shapes can equally be made, such as polygon The condenser dielectric piece of different shapes such as shape figure can according to completing the manufacture of its element the need for difference, such as circle Chip capacitor element can then make print formula capacitor element as shown in Figure 7.
Multiple capacitor elements are connected in series or in parallel, constitute sheet type modularized capacitor.
The electrode surface of multiple capacitor elements is superimposed placement by series connection in the same direction, and the electrode of adjacent elements is drawn Side is oppositely positioned;The electrode surface of multiple capacitor elements is superimposed placement by parallel connection in the same direction, and adjacent elements Electrode is drawn side and placed in the same direction.
Vacuum deposition apparatus used in the vacuum evaporation of the present invention includes evaporation chamber, the evaporation source being arranged in evaporation chamber Device, the baffle plate assembly being arranged between evaporation source and device to be deposited, described evaporation source are arranged on the steaming Plate the central area of chamber;Described baffle plate assembly is with corresponding with the evaporation source position for making evaporation thing The baffle plate assembly opening that matter passes through.
The size and/or shape of described baffle plate assembly opening is adjustable.
Described baffle plate assembly includes the baffle plate of at least two diverse locations for being located at evaporation chamber height direction, described gear Plate has opening, and described baffle plate can be moved in the horizontal direction, and the opening overlapping positions of each baffle plate form the baffle plate Component opening.
Described evaporation source includes at least two moveable point evaporation sources, and described evaporation source is movable to correspondence institute State at baffle plate assembly opening.
Described evaporation source includes the moveable support for being used to carry described evaporation source.
Finally it should be noted that:The above embodiments are merely illustrative of the technical scheme of the present invention and are not intended to be limiting thereof, although The present invention is described in detail with reference to above-described embodiment, those of ordinary skills in the art should understand that:Still The embodiment of the present invention can be modified or equivalent substitution, and appointing without departing from spirit and scope of the invention What modification or equivalent substitution, it all should cover among scope of the presently claimed invention.

Claims (13)

1. a kind of chip capacitor element electrode manufacture method, it is characterised in that methods described includes:
I, shaping;
II, the reserved blank tape on molding part;
III, generation electrode film.
2. a kind of chip capacitor element electrode manufacture method as claimed in claim 1, it is characterised in that the step I) Including suppressing or drawing flakiness by the dielectric material of chip capacitor;
The molding part is combined into sheet type modularized capacitor in series and/or in parallel.
3. a kind of chip capacitor element electrode manufacture method as claimed in claim 2, it is characterised in that the medium Material includes ceramics, mica, papery and film.
4. a kind of chip capacitor element electrode manufacture method as claimed in claim 1, it is characterised in that the step II) include, in addition to reserved electrode draws side, the blank tape of the reserved setting insulating isolation belt in other edges of the capacitor.
5. a kind of chip capacitor element electrode manufacture method as claimed in claim 4, the width of the blank tape is 0.1 To 10 millimeters.
6. a kind of chip capacitor element electrode manufacture method as claimed in claim 1, it is characterised in that the step III the electrode film) is arranged on a face of condenser dielectric.
7. a kind of chip capacitor element electrode manufacture method as claimed in claim 6, it is characterised in that use evaporation, The generation electrode film is pasted in spraying.
8. a kind of chip capacitor element electrode manufacture method as claimed in claim 7, it is characterised in that the electrode The thickness of film is 0.5 to 1.0 microns.
9. a kind of chip capacitor element electrode manufacture method as claimed in claim 8, it is characterised in that the electrode The material of film is metal material, diamond or graphite.
10. a kind of chip capacitor element electrode manufacture method as claimed in claim 9, it is characterised in that the metal Material includes at least one of titanium, tungsten, platinum, cobalt, copper, nickel, Jin Hexi or be combined between them at least one Plant alloy.
11. a kind of chip capacitor element electrode manufacture method as claimed in claim 7, it is characterised in that the evaporation Use vacuum evaporation.
12. a kind of chip capacitor element electrode manufacture method as claimed in claim 11, it is characterised in that described true Sky evaporation includes:
(1) molding part is subjected to ultrasonic wave cleaning, Ran Hougan in alcohol or any of propyl alcohol or cyclohexanone solvent It is dry;
(2) blank tape is covered with mould;
(3) molding part is put into deposited chamber to be deposited;
(4) molding part after evaporation is carried out being cooled to normal temperature.
13. a kind of chip capacitor element electrode manufacture method as claimed in claim 12, it is characterised in that described true Sky is 1 × 102~1 × 10-6Pa。
CN201610079706.0A 2016-02-04 2016-02-04 A kind of chip capacitor element electrode manufacture method Pending CN107039179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610079706.0A CN107039179A (en) 2016-02-04 2016-02-04 A kind of chip capacitor element electrode manufacture method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610079706.0A CN107039179A (en) 2016-02-04 2016-02-04 A kind of chip capacitor element electrode manufacture method

Publications (1)

Publication Number Publication Date
CN107039179A true CN107039179A (en) 2017-08-11

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Family Applications (1)

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CN201610079706.0A Pending CN107039179A (en) 2016-02-04 2016-02-04 A kind of chip capacitor element electrode manufacture method

Country Status (1)

Country Link
CN (1) CN107039179A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1471116A (en) * 2002-07-03 2004-01-28 太阳诱电株式会社 Laminated capacitor and manufacturing method thereof
CN104143431A (en) * 2013-05-06 2014-11-12 三星电机株式会社 Multilayer ceramic electronic component and board for mounting the same
JP2014216635A (en) * 2013-04-22 2014-11-17 サムソン エレクトロ−メカニックス カンパニーリミテッド. Multi-layered ceramic capacitor and board for mounting the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1471116A (en) * 2002-07-03 2004-01-28 太阳诱电株式会社 Laminated capacitor and manufacturing method thereof
JP2014216635A (en) * 2013-04-22 2014-11-17 サムソン エレクトロ−メカニックス カンパニーリミテッド. Multi-layered ceramic capacitor and board for mounting the same
CN104143431A (en) * 2013-05-06 2014-11-12 三星电机株式会社 Multilayer ceramic electronic component and board for mounting the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
杨爱民,姚婷珍: "《金属材料类专业实践教学指导》", 30 September 2011 *

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Application publication date: 20170811