CN107026581A - electrostatic energy collector and preparation method thereof - Google Patents
electrostatic energy collector and preparation method thereof Download PDFInfo
- Publication number
- CN107026581A CN107026581A CN201710295412.6A CN201710295412A CN107026581A CN 107026581 A CN107026581 A CN 107026581A CN 201710295412 A CN201710295412 A CN 201710295412A CN 107026581 A CN107026581 A CN 107026581A
- Authority
- CN
- China
- Prior art keywords
- polar plate
- fixed polar
- electrode layer
- etching
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 239000003990 capacitor Substances 0.000 claims abstract description 19
- 230000005684 electric field Effects 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 80
- 238000005530 etching Methods 0.000 claims description 55
- 239000011159 matrix material Substances 0.000 claims description 48
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 230000003647 oxidation Effects 0.000 claims description 22
- 238000007254 oxidation reaction Methods 0.000 claims description 22
- 238000001259 photo etching Methods 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 230000002441 reversible effect Effects 0.000 claims description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 14
- 238000009826 distribution Methods 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 230000003319 supportive effect Effects 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 description 24
- 229920002120 photoresistant polymer Polymers 0.000 description 23
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 15
- 235000012239 silicon dioxide Nutrition 0.000 description 14
- 239000000126 substance Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 8
- 238000012360 testing method Methods 0.000 description 7
- 230000001133 acceleration Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 229910003978 SiClx Inorganic materials 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 230000010358 mechanical oscillation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/06—Influence generators
- H02N1/08—Influence generators with conductive charge carrier, i.e. capacitor machines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/01—Details
- H01G5/011—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
Abstract
The invention relates to an electrostatic energy collector and a preparation method thereof. An electrostatic energy harvester includes a variable capacitance structure and a bias voltage generating device; the variable capacitor structure comprises a first fixed polar plate, a second fixed polar plate and a moving polar plate; the first fixed polar plate comprises a first substrate and a first electrode layer; the second fixed polar plate is oppositely arranged towards the first fixed polar plate; the second fixed electrode plate includes a second base and a third electrode layer. The moving polar plate is arranged between the first fixed polar plate and the second fixed polar plate; the moving polar plate comprises a supporting member, a mass block and a second electrode layer; the bias voltage generating device is used for generating a bias voltage to form a fixed electric field among the first fixed polar plate, the second fixed polar plate and the moving polar plate. The electrostatic energy collector comprises two variable capacitors, and the output power of the electrostatic energy collector can be effectively improved. Two fixed polar plates in the electrostatic energy collector encapsulate the moving polar plate structure in the collector, thereby improving the stability of the collector.
Description
Technical field
The present invention relates to energy acquisition technical field, more particularly to a kind of electrostatic energy collector and preparation method thereof.
Background technology
Energy acquisition technology, will be being seen everywhere, renewable by energy collecting device as a kind of new power supply mode
The energy, such as mechanical oscillation, wind energy, solar energy, heat energy, nuclear energy change into electric energy, and the electric power management circuit that combination matches,
Electric energy is provided for load.Vibration energy collector is one kind in energy collecting device, and it can be by generally existing in nature
Mechanical vibrational energy is converted into electric energy, and then realizes to be that various low power dissipation electron elements or micro-system are powered incessantly, institute
There is good research and application prospect with the micro battery of this type.Electrostatic type vibration energy collector construction is to be based on variable capacitance knot
What structure was designed, compared to piezoelectric type and electromagnetic vibration energy harvester, the advantage of electrostatic type vibration energy collector construction exists
It is easy to that silicon-base miniature energy collecting device is made by MEMS micro fabrications in it, so as to be able to large-scale low-cost production.
But, the power output of current electrostatic energy collecting device is low, and stability is poor, is unfavorable for the popularization and application of energy collecting device.
The content of the invention
Based on this, it is necessary to provide a kind of power output height and the good electrostatic energy collector of stability and its making side
Method.
A kind of electrostatic energy collector, including variable capacitor structure and bias voltage generating means；The variable capacitance
Structure includes the first fixed polar plate, the second fixed polar plate and motion pole plate；First fixed polar plate includes the first matrix and the
One electrode layer；The first groove is offered on first matrix；The first electrode layer is formed on first matrix and opened up
There is the one side of the first groove；Second fixed polar plate is oppositely arranged towards first fixed polar plate；Second fixed pole
Plate includes the second matrix and the 3rd electrode layer；The one side relative with first fixed polar plate is provided with second matrix
Two grooves；3rd electrode layer is formed at the one side that the second groove is offered on second matrix；The motion pole plate is set
Between first fixed polar plate and the second fixed polar plate；The motion pole plate includes supporting member, mass and second
Electrode layer；The supporting member is connected with first matrix and second matrix；The supporting member is used to support institute
Mass is stated, and the mass is located between first groove and second groove；Second matrix and institute
State supporting member connection；The second electrode lay is formed at the surface of the motion pole plate；The second electrode lay is included at least
One sub- electrode layer；Wherein, the bias voltage generating means are used to generate bias voltage with first fixed polar plate, institute
State and form stationary electric field between the second fixed polar plate and the motion pole plate.
In one of the embodiments, the second electrode lay includes a sub- electrode layer；The sub-electrode layer is formed at
The one side relative with first fixed polar plate on the motion pole plate.
In one of the embodiments, one side relative with first groove on the mass and/or described first
Salient point is provided with groove；Set on the mass in the one side relative with second groove and/or second groove
There is salient point.
In one of the embodiments, it is provided with salient point in first groove and second groove.
In one of the embodiments, the bias voltage generating means are electret；There is electric charge on the electret
Distribution；The electret is at least covered on two electrode layers in the variable capacitor structure.
In one of the embodiments, the electret is covered in the first electrode layer surface and the 3rd electrode layer
Surface；There is xenogenesis distribution of charges on the electret.
In one of the embodiments, the supporting member includes supportive body and cantilever beam structure；The supportive body
For hollow structure, for placing the mass；The cantilever beam structure connects with the supportive body, the mass respectively
Connect.
A kind of preparation method of electrostatic energy collector, including prepare the first fixed polar plate, prepare the second fixed polar plate, system
Received shipment movable plate electrode and the step of prepare bias voltage generating means；The step of the first fixed polar plate of the preparation, includes：There is provided
Positive and negative are all formed with the first chip of silicon oxide film；By photoetching and etching by the partial oxidation of first front wafer surface
Silicon fiml is removed；Using the not removed silicon oxide film of first front wafer surface as mask, the front of first chip is carried out
Etching forms the first matrix, and the position being etched away forms the first groove；Metal level is formed in the front of first chip to make
For first electrode layer；The step of the second fixed polar plate of the preparation, includes：Positive and negative are provided and are all formed with the second of silicon oxide film
Chip；The partial oxidation silicon fiml of second front wafer surface is removed by photoetching and etching；With second front wafer surface not
Removed silicon oxide film is mask, the front of second chip is performed etching to form the second matrix, the position being etched away
Put to form the second groove；Metal level, which is formed, in the front of second chip is used as the 3rd electrode layer；It is described to prepare motion pole plate
The step of include：The third wafer that positive and negative are all formed with silicon oxide film is provided；By photoetching and etching by the third wafer
Positive partial oxidation silicon fiml is removed, and the position of not removed silicon oxide film is the position for the mass for moving pole plate；With
The not removed silicon oxide film in the third wafer front is mask, and the front of the third wafer is performed etching, is etched
Locate the thickness of cantilever beam in the supporting member that remaining wafer thickness is the motion pole plate twice；Will by photoetching and etching
The partial oxidation silicon fiml of the third wafer reverse side is removed, and the position of not removed silicon oxide film is the position of the cantilever beam
Put；Using the not removed silicon oxide film of the third wafer obverse and reverse as mask, to the positive and anti-of the third wafer
Face is etched simultaneously, and stops etching when cutting through the third wafer, forms the cantilever beam；In the reverse side of the third wafer
Form metal level and be used as the second electrode lay；It is described be included in the step of prepare bias voltage generating means the first electrode layer and
3rd electrode layer forms electrically charged electret.
In one of the embodiments, it is described by photoetching and etching by the partial oxidation silicon fiml of first front wafer surface
In the step of removal, retain the partial oxidation silicon fiml above first groove and be used as the first salient point shaped alumina film；The system
The step of standby first fixed polar plate, also includes：Etching is formed before the first matrix, using silicon oxide film as the chip of mask etching first,
In the first salient point shaped alumina film first salient point formed below, etching depth is the object height of first salient point, and
Etching removes the first salient point shaped alumina film；It is described by photoetching and etching by the partial oxidation of second front wafer surface
In the step of silicon fiml is removed, retain the partial oxidation silicon fiml above second groove and be used as the second salient point shaped alumina film；Institute
The step of stating the second fixed polar plate of preparation also includes：Etching is formed before the second matrix, using silicon oxide film as mask etching second
Chip, in the second salient point shaped alumina film second salient point formed below, etching depth is high for the target of second salient point
Degree, and etch removal the second salient point shaped alumina film.
In one of the embodiments, it is described to form electrically charged stay in the first electrode layer and the 3rd electrode layer
The step of polar body, includes：Respectively electret is formed on the surface of the first electrode layer and the 3rd electrode layer；Respectively to institute
The electret for stating first electrode layer and the 3rd electrode layer carries out being charged such that the electret has distribution of charges.
Above-mentioned electrostatic energy collector, forms a variable capacitance between the first fixed polar plate and motion pole plate, second consolidates
Another variable capacitance is formed between fixed plate and motion pole plate, that is to say that electrostatic energy collector can power transformation including two
Hold, therefore the power output of electrostatic collector can be effectively improved.Also, two pieces of fixed polar plates in electrostatic energy collector will
Motion electrode plate structure is encapsulated in the inside of collector, so as to improve the stability of collector.
Brief description of the drawings
Fig. 1 be an embodiment in electrostatic energy collector structure chart；
Fig. 2 be Fig. 1 in electrostatic energy collector sectional view；
Fig. 3 A be an embodiment in electrostatic energy collector shaft side figure；
Fig. 3 B are the axle sectional side view of Fig. 3 A electrostatic energy collector；
Fig. 4 A~4E is respectively charge pattern on electret in the variable capacitor structure in five embodiments；
Fig. 5 be an embodiment in electret surface corona charging mode schematic diagram；
The flow chart for the step of Fig. 6 is prepares the first fixed polar plate in an embodiment；
The flow chart for the step of Fig. 7 is prepares the first fixed polar plate in another embodiment；
Fig. 8 A~8H is the structural representation of device corresponding with the preparation flow in Fig. 7；
The flow chart for the step of Fig. 9 is prepares the second fixed polar plate in an embodiment；
Figure 10 is the flow chart of preparation motion pole plate step in an embodiment；
The flow chart of Figure 11 is prepares motion pole plate in another embodiment the step of；
Figure 12 A~12H is the structural representation of device corresponding with the preparation flow in Figure 11；
Figure 13 A are the schematic diagram of upper structure devices test circuit；
Figure 13 B are the schematic diagram of lower structure devices test circuit；
Figure 13 C be an embodiment in electrostatic energy collector device integrated testability circuit schematic diagram；
Figure 14 A~14C is corresponding diagram 13A~13C three kinds of connected modes in the case of three kinds of different driving acceleration
External power output with drive frequency variations schematic diagram；
Figure 15 be electrostatic energy collector in an embodiment when outside drive signal is random signal, test band logical
Power output variation diagram in the case of (135 ± 25Hz)；
Figure 16 is that the electrostatic energy collector in an embodiment fills under random vibration environment to 47 μ F capacitor
Charger voltage when electric with the charging interval change curve.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
A kind of electrostatic energy collector, vibrational energy can be converted to electric energy stored or outwards powered.Fig. 1 is
The structure chart of electrostatic energy collector in one embodiment.As shown in figure 1, the electrostatic energy collector includes the first fixed polar plate
100th, the second fixed polar plate 200, motion pole plate 300 and bias voltage generating means (not showing in Fig. 1).First fixed polar plate
100th, the second fixed polar plate 200 and motion pole plate 300 constitute and become space type variable capacitor structure.Bias voltage generating means are used for
Bias voltage is generated to form stationary electric field between the first fixed polar plate 100, the second fixed polar plate 200 and motion pole plate 300.
Fig. 2 be Fig. 1 in electrostatic energy collector sectional view.As shown in Fig. 2 the first fixed polar plate 100 includes first
Matrix 110 and first electrode layer 130.The first groove is offered on first matrix 110.First electrode layer 130 is formed at the first base
The one side of the first groove is offered on body 110.Motion pole plate 300 is oppositely arranged with the first fixed polar plate 100.Second fixed polar plate
200 are oppositely arranged towards the first fixed polar plate 100.Second fixed polar plate 200 includes the second matrix 210 and the 3rd electrode layer 230.
The one side relative with the first fixed polar plate 100 is provided with the second groove on second matrix 210.3rd electrode layer 230 is formed at
The one side of the second groove is offered on two matrixes 210.Move pole plate 300 and be located at the first fixed polar plate 100 and the second fixed polar plate
Between 200.Moving pole plate 300 includes supporting member 310 (as shown in Figure 1), mass 330 and the second electrode lay.Support structure
Part 310 is connected with the first matrix 110 and the second matrix 210 respectively.Supporting member 310 is used to support mass 330, and causes
Mass 330 is located between the first groove and the second groove.Supporting member 310 includes supportive body 311 and cantilever beam structure
313.Supportive body 311 is hollow structure, for placing mass 330.Cantilever beam structure 313 respectively with supportive body 311 with
And mass 330 is connected, to realize the supporting role to mass 330.The second electrode lay is formed at the surface of motion pole plate；The
Two electrode layers include at least one sub-electrode layer.In the present embodiment, the second electrode lay only one of which sub-electrode layer 350.Sub- electricity
Pole layer 350 moves one side relative with the first fixed polar plate 100 on pole plate 300 to be formed at.Second fixed polar plate 200 and motion
The one side in opposite being oppositely arranged on pole plate 300 with the first fixed polar plate 100 is oppositely arranged.
Above-mentioned electrostatic energy collector, a variable capacitance is formed between the first fixed polar plate 100 and motion pole plate 300,
Another variable capacitance is formed between second fixed polar plate 200 and motion pole plate 300, that is to say that electrostatic energy collector includes
Two variable capacitances, therefore the power output of electrostatic collector can be effectively improved.Also, two pieces in electrostatic energy collector
Fixed polar plate will move the construction packages of pole plate 300 in the inside of collector, so as to improve the stability of collector.
Fig. 1 schematically describes the electrostatic energy collector in the present embodiment.The electrostatic energy collector is solid by two
Fixed plate component and a four cantilever beams-centroplasm gauge block move the electrostatic energy of the sandwich structure after pole plate component is bonded
Collector.The electrostatic energy collector includes two change space type variable capacitor structures, therefore can effectively improve electrostatic energy
Measure the power output of collector.Fig. 3 A are the shaft side figures of the electrostatic energy collector of the present embodiment.Fig. 3 B are the quiet of the present embodiment
The axle sectional side view of electric energy collect and acquisition.
In the present embodiment, bias voltage generating means are there is distribution of charges on electret, electret.Electret is at least
It is covered on two electrode layers in the variable capacitor structure of electrostatic energy collector.Specifically, in electrostatic energy collector
Electret is coated in variable capacitor structure on electrode layer, and electret is carried out corona charging to cause variable capacitance
There is distribution of charges in the electrode layer in structure.Electret includes inorganic electret material or organic electret material.Electrostatic
In the variable capacitor structure of energy collecting device, on electrode layer by coating electret with cause electrode layer exist distribution of charges bag
Five kinds are included, referring specifically to Fig. 4 A to Fig. 4 E.As shown in Figure 4 A, the inner surface of the 3rd electrode layer 230 of the second fixed polar plate 200 point
It is furnished with positive charge.Negative electrical charge is distributed with the inner surface of the first electrode layer 130 of first fixed polar plate 100.As shown in Figure 4 B, move
Surface distributed negative electrical charge of the pole plate 300 relative to the second fixed polar plate 200.The first electrode layer 130 of first fixed polar plate 100
Negative electrical charge is distributed with inner surface.As shown in Figure 4 C, surface distributed positive electricity of the motion pole plate 300 relative to the second fixed polar plate 200
Lotus.Positive charge is distributed with the inner surface of the first electrode layer 130 of first fixed polar plate 100.As shown in Figure 4 D, pole plate 300 is moved
Relative to the surface distributed negative electrical charge of the second fixed polar plate 200.Move surface of the pole plate 300 relative to the first fixed polar plate 100
It is distributed positive charge.As shown in Figure 4 E, positive charge is distributed with the inner surface of the 3rd electrode layer 230 of the second fixed polar plate 200.First
Negative electrical charge is distributed with the inner surface of the first electrode layer 130 of fixed polar plate 100.Pole plate 300 is moved relative to the second fixed polar plate
200 surface distributed negative electrical charge.Move surface distributed positive charge of the pole plate 300 relative to the first fixed polar plate 100.In Fig. 2 institutes
In the embodiment shown, electret 150 and electret 250 are respectively overlay in the inner surface and the 3rd electrode layer of first electrode layer 130
230 inner surface.Distribution of charges on the electrode layer 230 of first electrode layer 130 and the 3rd is as shown in Figure 4 A.First electrode layer 130
Xenogenesis electric charge is filled respectively with the 3rd electrode layer 230, is two variable capacitor structures (the first fixed polar plate 100 and motion pole plate 300
Second variable capacitor structure of the first variable capacitor structure formed, the second fixed polar plate 200 and the motion formation of pole plate 300) carry
For bias.Wherein, it is as shown in Figure 5 to electret 150 (250) surface progress corona charging mode in the present embodiment.During charging,
First fixed polar plate 100 or the second fixed polar plate 200 are grounded, corona charging tip 501 apply high voltage (can positive voltage, can bear
Voltage), electric charge can move to electret 150 (250) surface and inside in the presence of highfield, form stable high density and consolidate
Determine distribution of charges (polarity of this electric charge depends on the polarity of corona charging tip voltage), the stable fixed charge of this high density is
Variable capacitor structure provides bias voltage.The voltage of aperture plate 503 can adjust control electret 150 (250) surface potential with
And ensure surface charge distribution uniformity.
The first of the one side relative with the first groove of the first matrix 110 and/or the first matrix 110 is recessed on mass 330
Salient point is provided with groove.The one side relative with the second groove of the second matrix 210 and/or the second matrix 210 on mass 330
Salient point is provided with second groove.In the embodiment shown in Figure 2, it is provided with salient point in the first groove of the first matrix 110
170.Salient point 170 can obstruct motion the fixed polar plate 100 of pole plate 300 and first between due to the surface of electret 150 electrostatic inhale
The adhesion that contacts with each other of the motion fixed polar plate 100 of pole plate 300 and first caused by attached power.In second groove of the second matrix 210
It is provided with salient point 270.Salient point 270 can obstruct motion the fixed polar plate 200 of pole plate 300 and second between due to the table of electret 250
The adhesion that contacts with each other of the motion fixed polar plate 200 of pole plate 300 and second caused by the electrostatic adsorption force in face.
Present invention also offers a kind of preparation method of electrostatic energy collector, for preparing above-mentioned electrostatic energy collection
Device.A kind of preparation method of electrostatic energy collector include prepare the first fixed polar plate, prepare the second fixed polar plate and, prepare fortune
Movable plate electrode and the step of prepare bias voltage generating means.In the present embodiment, the preparation method uses MEMS micro Process works
It is prepared by skill.
In the present embodiment, the first fixed polar plate is prepared according to the topology requirement of the first fixed polar plate.First fixed polar plate
Including the first matrix and first electrode layer.First matrix is silica-base material, and first electrode layer is metal level.As shown in fig. 6, preparing
The step of first fixed polar plate, includes：
S611 is formed with the first chip of silicon oxide film there is provided positive and negative.
S613, is removed the partial oxidation silicon fiml of first front wafer surface by photoetching and etching.
S615, using the not removed silicon oxide film of first front wafer surface as mask, to the front of first chip
Perform etching to form the first matrix, the position being etched away forms the first groove.
S617, forms metal level in the front of first chip and is used as first electrode layer.
In the present embodiment, the partial oxidation silicon fiml above the first groove is retained in step S613 to be molded as the first salient point
Oxide-film.Step S615 is before etching forms the first matrix, in addition to using silicon oxide film as the chip of mask etching first, the
One salient point shaped alumina film the first salient point formed below, etching depth is the object height of the first salient point, and etches removal first
Salient point shaped alumina film.
Specifically, the preparation flow of the first fixed polar plate is as shown in fig. 7, comprises following steps：
There is provided the two-sided chip for being formed with silicon dioxide layer by S710.
Silicon (100) chip of one piece of two-sided oxidizing polishing is carried out to the cleaning of standard, the chip of cleaning is obtained, such as Fig. 8 A institutes
Show.
S720, carries out photoetching to obtain structure graph in the two-sided formation photoresist of chip, and to the photoresist of front wafer surface.
In the present embodiment, using the one side of chip as front, then opposite face is reverse side.In front wafer surface spin coating photoresist,
And photoetching process is used, obtain the microstructure graph formed by photoresist.In crystal wafer back face spin coating photoresist to protect reverse side
Silicon dioxide layer.Prepare the structure completed as shown in Figure 8 B.
S730, using photoresist as mask layer, wet-chemical chamber is carried out to the structure graph of gained, naked to remove front wafer surface
The silicon dioxide layer of dew simultaneously removes photoresist, forms the structure graph being made up of silica.
Using photoresist as mask layer, BOE is carried out to the microstructure graph of gained, and (Buffered Oxide Etchant delay
Rush etching solution) wet-chemical chamber, photoresist is removed after removing the exposed silicon dioxide layer of front wafer surface, so as to be formed by dioxy
The microstructure graph of SiClx composition, as shown in Figure 8 C.
S740, using silica as mask layer, carries out wet-chemical chamber, etching monocrystalline silicon is obtained to the structure graph of gained
Salient point.
Using silica as mask layer, KOH (potassium hydroxide) wet-chemical chamber is carried out to obtained microstructure graph, carved
The monocrystalline silicon of certain depth is lost, the microscopic bumps for the level altitude that design needs are obtained.When salient point can avoid the collector from working,
Can not separately it be damaged because the electrostatic adsorption of electret surface causes the two-plate for becoming space type variable capacitance to adhere to each other
Bad device.Fig. 8 D are the schematic diagrames after the completion of step S740.
S750, using plasma dry etch process removes the silicon dioxide layer of bump surface.
In the present embodiment, using ICP (inductively coupled plasma, inductively coupled plasma) etc. from
Daughter dry etching method, removes the silicon dioxide layer of bump surface.Complete the device architecture such as Fig. 8 E obtained after step S750
It is shown.
S760, using silicon dioxide layer as mask layer, etching monocrystalline silicon formation groove.
Using silica as mask layer, KOH wet-chemical chambers are carried out, the monocrystalline silicon of certain depth is etched, obtaining design needs
The groove for the constant depth wanted, as shown in Figure 8 F.
Face where S770, the groove in chip forms layer of metal layer and is used as first electrode layer.
Face where groove in chip, namely the front of chip use magnetron sputtering layer of metal, are used as fixed polar plate
Electrode, as shown in fig. 8g.In the present embodiment, metal level is aluminium/chromium metal conducting layer.In other examples, can also
Prepared using the mode such as evaporation and plating.
Complete the preparation that step S770 then completes the first fixed polar plate.In the present embodiment, because bias voltage is generated
The structure of device electret built in, therefore also may proceed to prepare bias voltage generating means, i.e. S780 after S770 is completed
~S790.In other examples, if bias voltage generating means use external device, S780~S790 need not be performed.
S780, in first electrode layer surface one layer of electret of formation.
One layer of electret, and reserved part bare electrode are formed in first electrode layer namely layer on surface of metal.Electret is extremely
Groove region is completely covered less, as illustrated in figure 8h.Electret is inorganic electret material or organic electret material.
In the present embodiment, electret is CYTOP (clear fluoropolymer) electret.
S790, charges to electret.
Charged by way of corona charging for the electret on the first fixed polar plate surface so that exist on electret
Distribution of charges, so as to form stationary electric field.
In the present embodiment, the second fixed polar plate is prepared according to the topology requirement of the second fixed polar plate.Second fixed polar plate
Including the second matrix and the 3rd electrode layer.Second matrix is silica-base material, and the 3rd electrode layer is metal level.As shown in figure 9, preparing
The step of second fixed polar plate, includes：
S621 is formed with the second chip of silicon oxide film there is provided positive and negative.
S623, is removed the partial oxidation silicon fiml of second front wafer surface by photoetching and etching.
S625, using the not removed silicon oxide film of second front wafer surface as mask, to the front of second chip
Perform etching to form the second matrix, the position being etched away forms the second groove.
S627, forms metal level in the front of second chip and is used as the 3rd electrode layer.
In the present embodiment, the partial oxidation silicon fiml above the second groove is retained in step S623 to be molded as the second salient point
Oxide-film.Step S625 is before etching forms the second matrix, in addition to using silicon oxide film as the chip of mask etching second, the
Two salient point shaped alumina film the second salient points formed below, etching depth is the object height of the second salient point, and etches removal second
Salient point shaped alumina film.
Specifically, the preparation flow of the second fixed polar plate is identical with the preparation flow of the first fixed polar plate, no longer does herein
Further instruction.
In the present embodiment, according to the structure graph of motion pole plate move the preparation of pole plate.Moving pole plate includes branch
Support component, mass and the second electrode lay.As shown in Figure 10, the step of preparing motion pole plate includes：
S631 is formed with the third wafer of silicon oxide film there is provided positive and negative.
S633, is removed the positive partial oxidation silicon fiml of the third wafer by photoetching and etching, not removed oxygen
The position of SiClx film is the position for the mass for moving pole plate.
S635, using the not removed silicon oxide film in third wafer front as mask, to the front of the third wafer
Perform etching, the remaining wafer thickness in place that is etched is twice of the thickness of cantilever beam in the supporting member for moving pole plate.
S637, is removed the partial oxidation silicon fiml of the third wafer reverse side by photoetching and etching, not removed oxygen
The position of SiClx film is the position of the cantilever beam.
S638, using the not removed silicon oxide film of the third wafer obverse and reverse as mask, to the third wafer
Obverse and reverse etch simultaneously, and stop etching when cutting through the third wafer, form the cantilever beam.
S639, the second electrode lay is used as in the reverse side formation metal level of the third wafer.
Specific preparation flow is as shown in figure 11.Figure 11 is the preparation flow for moving pole plate in an embodiment, including with
Lower sub-step.
There is provided the two-sided chip for being formed with silicon dioxide layer by S910.
Silicon (100) chip of one piece of two-sided oxidizing polishing is carried out to the cleaning of standard, the chip of cleaning, such as Figure 12 A is obtained
It is shown.
S920, carries out photoetching to obtain structure graph in the two-sided formation photoresist of chip, and to the photoresist of front wafer surface.
In the present embodiment, using the one side of chip as front, then opposite face is reverse side.In front wafer surface spin coating photoresist,
And photoetching process is used, obtain the microstructure graph formed by photoresist.In crystal wafer back face spin coating photoresist to protect reverse side
Silicon dioxide layer.Prepare the structure completed as shown in Figure 12 B.
S930, using photoresist as mask layer, wet-chemical chamber is carried out to the structure graph of gained, naked to remove front wafer surface
The silicon dioxide layer of dew simultaneously removes photoresist, forms the structure graph being made up of silica.
Using photoresist as mask layer, BOE wet-chemical chambers are carried out to the microstructure graph of gained, front wafer surface are removed exposed
Silicon dioxide layer after photoresist is removed, so as to form the microstructure graph being made up of silica, as indicated in fig. 12 c.
S940, using silica as mask layer, wet-chemical chamber, etching monocrystalline silicon are carried out to the structure graph of gained until
The thickness of remaining monocrystalline silicon reaches target thickness.
Using silica as mask layer, KOH wet-chemical chambers are carried out to the microstructure graph of gained, etching certain depth
Monocrystalline silicon.Etching depth is relevant with the thickness of the cantilever beam of supporting member, and the thickness of the monocrystalline silicon generally left after etching is outstanding
Twice of arm cantilever thickness.Figure 12 D are the structural representation for completing device after S940.
S950, in crystal wafer back face formation photoresist, and performs etching to obtain structure graph.
In crystal wafer back face spin coating photoresist, using photoetching process, the microstructure graph formed by photoresist is obtained, is such as schemed
Shown in 12E.
S960, using photoresist as mask layer, the method for using plasma dry etching, remove crystal wafer back face it is exposed two
Silicon oxide layer.
In the present embodiment, using photoresist as mask layer, using ICP (inductively coupled plasma, sense
Answer coupled plasma) plasma dry etching method, remove the exposed silicon dioxide layer of crystal wafer back face.Figure 12 F are step
Structural representation after the completion of S960.
S970, using silica as mask layer, wet-chemical chamber is carried out to front wafer surface and reverse side simultaneously, cut through chip from
And form supporting member and mass.
Mask layer is done with silica, KOH wet-chemical chambers are carried out simultaneously to chip tow sides, chip is cut through, is discharged
Cantilever beam structure, completes the processing of four cantilever beams-exercise quality block.
S980, wet-chemical chamber is carried out to remove the silicon dioxide layer on surface to the surface of mass, naked on mass
Dew silicon face formation metal level, metal level as mass electrode layer.
In the present embodiment, structure obtained in the previous step is removed into superficial silicon dioxide layer using BOE, then exposed
Silicon face magnetron sputtering layer of metal, the electrode of pole plate component is moved as four cantilever beams-centroplasm gauge block.In others implementation
In example, it would however also be possible to employ prepared by the mode such as evaporation and plating.Figure 12 G are the structural representation for completing device after S980.
In the present embodiment.Salient point need not be set on mass, therefore reduce the difficulty of processing technology.In other embodiments, also may be used
With on mass with setting salient point on the position of the salient point of corresponding fixed polar plate, with strengthen antistatic absorption effect.Figure 12 H
To complete the structural representation of device after S970.
It is the preparation for completing motion pole plate to complete S980.
In the present embodiment, because bias voltage generating means complete system simultaneously in fixed polar plate preparation process
It is standby, therefore can be by the motion pole plate prepared attaching relative with the first fixed polar plate, and be attached by key and technology, so that
Form first capacitance structure.Then the another side of the second fixed polar plate and motion pole plate is subjected to relative attaching, and passes through key
It is attached with technology, so as to form second capacitance structure.The electrostatic energy collector is to be monolithically fabricated sandwich structure
Device.After pole plate connection, supporting member is connected with the first matrix and the second matrix, and mass is the next in the support of supporting member
In the top (below the groove of the second fixed polar plate) of the groove of the first fixed polar plate, as shown in Fig. 3 A~3B.
Illustrate the service behaviour of the electrostatic energy collector in the present embodiment for progressive one, with reference to a specific implementation
Example is illustrated.The key structural parameters of electrostatic energy collector selected by the present embodiment are as follows：First fixed polar plate and
The depth of groove of second fixed polar plate is 350 μm, cantilever beam size is that 7mm*0.2mm*0.06mm, mass size are
Electret surface potential absolute value about 600V on 9.5mm*9.5mm*0.5mm, the first fixed polar plate and the second fixed polar plate~
650V。
Figure 13 A~13C describes the test circuit schematic diagram of the present embodiment electrostatic energy collector.Test philosophy：Electrostatic
When energy collecting device works, by recording resistance R0The magnitude of voltage at two ends, then by calculating resistance R1+R0It is upper to be consumed
Power, the performance number that as electrostatic energy collector is externally exported.According to this test mode, the electrostatic in the present embodiment is contrasted
The power output of energy collecting device and the power output of the electrostatic energy collector of two single capacitance structures up and down.
Sinusoidal vibration additional first, by adjusting variable resistor R1, find when electrostatic energy collector power output is maximum
When, optimal load resistance R1+R0, then dead load resistance, electrostatic energy collector is carried out sweep check and certain frequency range with
Machine is tested.Test result is illustrated below in conjunction with accompanying drawing.
Figure 14 A~14C is sinusoidal drive signals frequency liter from 100Hz to 170Hz when external loading resistance is 20M Ω
Frequency changes, and measures the corresponding device output power change curve of three kinds of connected modes.Three kinds of vibration accelerations are have chosen respectively：
4.99m/s2 (0.5g), 9.98m/s2 (1g), 19.96m/s2 (2g).Accompanying drawing result is shown, no matter under which kind of acceleration, this
The power output of electrostatic energy collector in embodiment is all higher than upper structure devices or the single output work of lower structure devices
Rate.Simultaneously when acceleration, which increases to, make it that the film-air damping between mass and fixed polar plate is significantly raised (Figure 14 B), or
Person make it that output band can be to low frequency Directional Extension when mass collides with fixed polar plate (Figure 14 C).As shown in Figure 14 C,
The maximum power output of electrostatic energy collector in the present embodiment alreadys exceed 20 μ W, this mainly with electret surface high potential
Sandwich structure design with the electrostatic energy collector in the present embodiment is relevant.
Figure 15 is that under different average accelerations, the electrostatic energy collector in the present embodiment is in 135 ± 25Hz frequency models
Enclose interior random power output situation.Figure 16 be electrostatic energy collector in the present embodiment in the case of random vibration, to electric capacity
Device charging curve.With reference to the accompanying drawings 15 and accompanying drawing 16 understand, it is quiet in the present embodiment in average acceleration about 1g (10.2m/s2)
Electric energy collect and acquisition can export the μ W of mean power 3.96 (load resistance 20M Ω) in 50Hz wide frequency range.It is quiet using this
Electric energy collect and acquisition charges under this random vibration environment to 47 μ F capacitor, electrostatic energy collector output electric signal
This condenser voltage can be charged to about 5.9v in 10 minutes after over commutation.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses the several embodiments of the present invention, and it describes more specific and detailed, but simultaneously
Can not therefore it be construed as limiting the scope of the patent.It should be pointed out that coming for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of electrostatic energy collector, including variable capacitor structure and bias voltage generating means；Characterized in that, described
Variable capacitor structure includes the first fixed polar plate, the second fixed polar plate and motion pole plate；
First fixed polar plate includes the first matrix and first electrode layer；The first groove is offered on first matrix；Institute
State first electrode layer and be formed at the one side that the first groove is offered on first matrix；
Second fixed polar plate is oppositely arranged towards first fixed polar plate；Second fixed polar plate includes the second matrix
With the 3rd electrode layer；The one side relative with first fixed polar plate is provided with the second groove on second matrix；Described
Three electrode layers are formed at the one side that the second groove is offered on second matrix；
The motion pole plate is located between first fixed polar plate and the second fixed polar plate；The motion pole plate includes support structure
Part, mass and the second electrode lay；The supporting member is connected with first matrix and second matrix；The branch
Support component is used to support the mass, and the mass is located between first groove and second groove；
Second matrix is connected with the supporting member；The second electrode lay is formed at the surface of the motion pole plate；Described
Two electrode layers include at least one sub-electrode layer；Wherein,
The bias voltage generating means are used to generate bias voltage with first fixed polar plate, second fixed polar plate
Stationary electric field is formed between the motion pole plate.
2. electrostatic energy collector according to claim 1, it is characterised in that the second electrode lay includes a son electricity
Pole layer；The sub-electrode layer is formed at one side relative with first fixed polar plate on the motion pole plate.
3. electrostatic energy collector according to claim 1, it is characterised in that with first groove on the mass
Salient point is provided with relative one side and/or first groove；The one side relative with second groove on the mass
And/or it is provided with salient point in second groove.
4. electrostatic energy collector according to claim 3, it is characterised in that first groove and second groove
Inside it is provided with salient point.
5. electrostatic energy collector according to claim 1, it is characterised in that the bias voltage generating means are electret
Body；There is distribution of charges on the electret；The electret is at least covered in two electrodes in the variable capacitor structure
On layer.
6. electrostatic energy collector according to claim 5, it is characterised in that the electret is covered in first electricity
Pole layer surface and the 3rd electrode layer surface；There is xenogenesis distribution of charges on the electret.
7. electrostatic energy collector according to claim 1, it is characterised in that the supporting member include supportive body and
Cantilever beam structure；The supportive body is hollow structure, for placing the mass；The cantilever beam structure respectively with it is described
Supportive body, mass connection.
8. a kind of preparation method of electrostatic energy collector, it is characterised in that consolidate including preparing the first fixed polar plate, preparing second
The step of fixed plate, preparation move pole plate and prepare bias voltage generating means；
The step of the first fixed polar plate of the preparation, includes：The first chip that positive and negative are all formed with silicon oxide film is provided；
The partial oxidation silicon fiml of first front wafer surface is removed by photoetching and etching；
Using the not removed silicon oxide film of first front wafer surface as mask, shape is performed etching to the front of first chip
Into the first matrix, the position being etched away forms the first groove；
Metal level, which is formed, in the front of first chip is used as first electrode layer；
The step of the second fixed polar plate of the preparation, includes：The second chip that positive and negative are all formed with silicon oxide film is provided；
The partial oxidation silicon fiml of second front wafer surface is removed by photoetching and etching；
Using the not removed silicon oxide film of second front wafer surface as mask, shape is performed etching to the front of second chip
Into the second matrix, the position being etched away forms the second groove；
Metal level, which is formed, in the front of second chip is used as the 3rd electrode layer；
The step of preparation motion pole plate, includes：The third wafer that positive and negative are all formed with silicon oxide film is provided；
The positive partial oxidation silicon fiml of the third wafer is removed by photoetching and etching, the position of not removed silicon oxide film
Put the position of the mass as motion pole plate；
Using the not removed silicon oxide film in third wafer front as mask, the front of the third wafer is performed etching,
The remaining wafer thickness in place that is etched is twice of the thickness of cantilever beam in the supporting member for moving pole plate；
The partial oxidation silicon fiml of the third wafer reverse side is removed by photoetching and etching, the position of not removed silicon oxide film
Put as the position of the cantilever beam；
Using the not removed silicon oxide film of the third wafer obverse and reverse as mask, to the positive and anti-of the third wafer
Face is etched simultaneously, and stops etching when cutting through the third wafer, forms the cantilever beam；
The second electrode lay is used as in the reverse side formation metal level of the third wafer；
It is described to be included in the first electrode layer and the 3rd electrode layer formation band the step of prepare bias voltage generating means
The electret of electric charge.
9. the preparation method of electrostatic energy collector according to claim 8, it is characterised in that
It is described the step of by photoetching and etching, the partial oxidation silicon fiml of first front wafer surface is removed in, retain described the
Partial oxidation silicon fiml above one groove is used as the first salient point shaped alumina film；The step of the first fixed polar plate of the preparation, also wraps
Include：
Etching is formed before the first matrix, using silicon oxide film as the chip of mask etching first, in the first salient point shaped alumina
Film the first salient point formed below, etching depth is the object height of first salient point, and etch removal first salient point into
Type oxide-film；
It is described the step of by photoetching and etching, the partial oxidation silicon fiml of second front wafer surface is removed in, retain described the
Partial oxidation silicon fiml above two grooves is used as the second salient point shaped alumina film；The step of the second fixed polar plate of the preparation, also wraps
Include：
Etching is formed before the second matrix, using silicon oxide film as the chip of mask etching second, in the second salient point shaped alumina
Film the second salient point formed below, etching depth is the object height of second salient point, and etch removal second salient point into
Type oxide-film.
10. the preparation method of electrostatic energy collector according to claim 8, it is characterised in that described described first
The step of electrode layer and the 3rd electrode layer form electrically charged electret includes：
Respectively electret is formed on the surface of the first electrode layer and the 3rd electrode layer；
Respectively the electret of the first electrode layer and the 3rd electrode layer is carried out being charged such that the electret is present
Distribution of charges.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710295412.6A CN107026581B (en) | 2017-04-28 | 2017-04-28 | Electrostatic energy collector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710295412.6A CN107026581B (en) | 2017-04-28 | 2017-04-28 | Electrostatic energy collector and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107026581A true CN107026581A (en) | 2017-08-08 |
| CN107026581B CN107026581B (en) | 2023-05-12 |
Family
ID=59527308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710295412.6A Active CN107026581B (en) | 2017-04-28 | 2017-04-28 | Electrostatic energy collector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107026581B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108199617A (en) * | 2017-12-20 | 2018-06-22 | 北京航天控制仪器研究所 | A kind of transverse direction MEMS piezoelectricity-electrostatic coupling energy collecting device and processing method |
| CN108347198A (en) * | 2017-01-25 | 2018-07-31 | 北京纳米能源与系统研究所 | Electret self-generating device and electret self power generation intelligent shoe |
| CN113890410A (en) * | 2021-09-30 | 2022-01-04 | 沈阳七斗星光电科技有限公司 | Electrostatic night vision device and power supply method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013157505A1 (en) * | 2012-04-17 | 2013-10-24 | 国立大学法人 埼玉大学 | Electret structure and method for manufacturing same, and electrostatic induction-type conversion element |
| CN105846711A (en) * | 2016-03-30 | 2016-08-10 | 南方科技大学 | Electrostatic vibration energy collector and preparation method thereof |
| CN106160564A (en) * | 2016-08-11 | 2016-11-23 | 南方科技大学 | Vibration type energy collector and preparation method thereof |
-
2017
- 2017-04-28 CN CN201710295412.6A patent/CN107026581B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013157505A1 (en) * | 2012-04-17 | 2013-10-24 | 国立大学法人 埼玉大学 | Electret structure and method for manufacturing same, and electrostatic induction-type conversion element |
| CN105846711A (en) * | 2016-03-30 | 2016-08-10 | 南方科技大学 | Electrostatic vibration energy collector and preparation method thereof |
| CN106160564A (en) * | 2016-08-11 | 2016-11-23 | 南方科技大学 | Vibration type energy collector and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108347198A (en) * | 2017-01-25 | 2018-07-31 | 北京纳米能源与系统研究所 | Electret self-generating device and electret self power generation intelligent shoe |
| CN108199617A (en) * | 2017-12-20 | 2018-06-22 | 北京航天控制仪器研究所 | A kind of transverse direction MEMS piezoelectricity-electrostatic coupling energy collecting device and processing method |
| CN108199617B (en) * | 2017-12-20 | 2019-07-12 | 北京航天控制仪器研究所 | A kind of transverse direction MEMS piezoelectricity-electrostatic coupling energy collecting device and processing method |
| CN113890410A (en) * | 2021-09-30 | 2022-01-04 | 沈阳七斗星光电科技有限公司 | Electrostatic night vision device and power supply method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107026581B (en) | 2023-05-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Boisseau et al. | Optimization of an electret-based energy harvester | |
| Crovetto et al. | An electret-based energy harvesting device with a wafer-level fabrication process | |
| CN107026581A (en) | electrostatic energy collector and preparation method thereof | |
| KR101906589B1 (en) | Apparatus for Harvesting and Storaging Piezoelectric Energy and Manufacturing Method Thereof | |
| CN104426425A (en) | Inertial power generation device with power generating unit and acceleration direction detection device | |
| CN103217553A (en) | Resonance type micro-mechanic acceleration sensor based on electromagnetic excitation detection mode | |
| CN102931878A (en) | Multi-cantilever broadband MEMS (micro-electromechanical system) piezoelectric energy harvester | |
| Luo et al. | Optimization of MEMS vibration energy harvester with perforated electrode | |
| CN203278696U (en) | Multiple cantilever wideband MEMS piezoelectric energy harvester | |
| CN105846711B (en) | Electrostatic vibration energy collector and preparation method thereof | |
| CN206865373U (en) | Electrostatic Energy Harvester | |
| Yang et al. | A high-performance micro electret power generator based on microball bearings | |
| CN107947633B (en) | Piezoelectric-electrcombinedc combinedc vibrational energy collector and preparation method thereof | |
| CN209358451U (en) | A kind of piezoelectric-electrcombinedc combinedc vibration energy collector responding multi-direction vibration | |
| CN102623184A (en) | Photoresist-diaphragm-based micro super-capacitor and manufacturing method thereof | |
| US8658512B2 (en) | Method for forming MEMS variable capacitors | |
| Li et al. | Electrostatic vibration energy harvester with a self-rechargeable electret | |
| Triches et al. | A MEMS energy harvesting device for vibration with low acceleration | |
| Zhang et al. | Electret-based electrostatic energy harvesting device with the MEMS technology | |
| CN106160564B (en) | Vibration type energy collector and preparation method thereof | |
| CN103580530A (en) | Electrostatic pendulum motion energy collector based on friction microstructure | |
| CN206023615U (en) | Vibration type energy collector | |
| Sterken et al. | Characterisation of an electrostatic vibration harvester | |
| Han et al. | Silicon-chip based electromagnetic vibration energy harvesters rapidly fabricated by wafer-level molten metal micro-casting technique | |
| Crovetto et al. | MEMS fabricated energy harvesting device with 2D resonant structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |