CN107004738A - Active layer structure, semiconductor light-emitting elements and display device - Google Patents
Active layer structure, semiconductor light-emitting elements and display device Download PDFInfo
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- CN107004738A CN107004738A CN201580067072.0A CN201580067072A CN107004738A CN 107004738 A CN107004738 A CN 107004738A CN 201580067072 A CN201580067072 A CN 201580067072A CN 107004738 A CN107004738 A CN 107004738A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/02—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes by tracing or scanning a light beam on a screen
- G09G3/025—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes by tracing or scanning a light beam on a screen with scanning or deflecting the beams in two directions or dimensions
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0233—Improving the luminance or brightness uniformity across the screen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Abstract
The semiconductor light-emitting elements have：First conductive layer, the second conductive layer and the active layer being arranged between the first conductive layer and the second conductive layer.First conductive layer has current blocking structure, and narrow current injection area domain is formed in current blocking structure.Active layer has multiple quantum well layers and is formed so that the first emission wavelength corresponding with the luminous combination level energy gap of the first quantum well layer in multiple quantum well layers is included in the wave-length coverage of the intensity peak of whole luminescent spectrum, and the first quantum well layer is arranged on closest at the position of the current blocking structure.
Description
Technical field
This technology is related to semiconductor light-emitting elements, its active layer structure and the display dress including the semiconductor light-emitting elements
Put.
Background technology
As semiconductor light-emitting elements, superluminescent diode (SLD) has characteristics that：It, which has, is relatively close to
The light of the wide luminescent spectrum width of light emitting diode and transmitting with narrow radiation angle and high intensity, such as semiconductor laser
Luminance.
SLD described in patent document 1 is included perpendicular to seen cleaved facets (cleavage end in plan view
Surface wire ridge waveguide formed by), and it is arranged along the curve guiding active layer of ridge waveguide bending.At cleavage end
On face, AR (antireflection) film is formed sometimes.It is active immediately below straight line ridge waveguide in the SLD with this structure
The major part of the light produced in layer advances to curve guiding active layer.The light of active layer is guided to be divided into due to bending towards curve
And leak light, be directed on end face (end face on the opposite side of cleaved facets) and in reflected light thereon and in quilt
Absorbed light while guiding.Using this structure, because the light leaked due to bending and the opposite side in cleaved facets
On end face on the light that reflects can not return to linear active layer, so inhibiting zlasing mode vibration (see, for example, the right side of page 2
Lower column to the upper left column of page 3, and Fig. 1).
In short, SLD without wherein light by the speculum being arranged on two end faces by the structure of resonance, and
It is that, by being transmitted via one-way waveguide and exaggerated structure (carry out stimulated emission), this is different from conventional with wherein light
Laser diode (LD).Difference between them is that the spectral width of the wavelength of SLD output light is much larger than LD output
The spectral width of the wavelength of light.
Patent document 2 discloses that what is used in fibre optic gyroscope, optical communication apparatus, optical application measurement apparatus etc. partly leads
Body light-emitting component (for example, SLD).The active layer (luminescent layer) of the semiconductor light-emitting elements is formed by InGaAs, and including bag
Multiple SQWs containing multiple barrier layers (barrier layers) and multiple well layer (well layers).It is known by many
At least one is set to strain well layer to improve luminous quantum efficiency in individual well layer.Specifically, partly leading disclosed in patent document 1
The different multiple well layer (the first well layer and the second well layer) of ratio of components of the active layer of body light-emitting component including wherein material.Cause
This, the structure of active layer has different band gap between the first well layer and the second well layer.Therefore, the element, Ke Yishi are utilized
Now the wide luminosity spectral characteristic of the centre wavelength with about 800nm to about 850nm is (see, for example, paragraph 0082,0091
To 0098, and 0207, and Fig. 3 A).
Prior art literature
Patent document
Patent document 1：Unexamined Patent 2-310975 publications
Patent document 2：International Publication No. 2006/075759
The content of the invention
Technical problem
Incidentally, in order to expand the applications of this semiconductor light-emitting elements, it is not intended merely to realize wide spectral width
Degree, and it is desirable that realize high output.
In view of above-mentioned situation, the purpose of this technology be to provide a kind of semiconductor light-emitting elements, its active layer structure and
Display device including the semiconductor light-emitting elements, they can realize wide luminescent spectrum width and increase output.
The solution of problem
To achieve these goals, the first conductive layer, the second conductive layer are included according to the semiconductor light-emitting elements of this technology
And active layer.
First conductive layer has current blocking structure (current constriction structure), current injection area
Domain narrows in current blocking structure.
Active layer is arranged between the first conductive layer and the second conductive layer, and active layer includes multiple quantum well layers, the first hair
Optical wavelength is in the wave-length coverage of the intensity peak of whole luminescent spectrum, and the first emission wavelength corresponds to the multiple quantum well layer
In the first quantum well layer luminous combination level energy gap (light emission recombination level energy
Gap), first quantum well layer is arranged near the position of the current blocking structure.
Due to being supplied to the first of the position that current blocking structure is located most closely in multiple quantum well layers of active layer
The first corresponding emission wavelength of the luminous combination level energy gap of quantum well layer is in the ripple of the intensity peak of whole luminescent spectrum
In long scope, it is possible to achieve wide luminescent spectrum width and height output.
Active layer can include one or more second quantum well layers and one or more 3rd quantum well layers.
One or more second quantum well layers have corresponding to the luminous of second emission wavelength longer than the first emission wavelength
Combination level energy gap.
One or more 3rd quantum well layers have corresponding to the luminous of threeth emission wavelength shorter than the first emission wavelength
Combination level energy gap.
Using the structure, luminescent spectrum width can be increased centered on the first emission wavelength, while realizing high output.
Active layer can include respectively as one or more second quantum well layers and one or more 3rd quantum well layers
Multiple second quantum well layers and multiple 3rd SQWs, multiple second quantum well layers have multiple different luminous combination levels
Energy gap, the multiple 3rd SQW has multiple different luminous combination level energy gaps.
Second quantum well layer and the 3rd quantum well layer can replace along the direction away from the first quantum well layer as described below
Ground is arranged.That is, emission wavelength corresponding with the luminous combination level energy gap of multiple second quantum well layers can represented
In the spectrogram of relation between emission wavelength and output from the first emission wavelength in ascending order, and with the multiple the
The corresponding emission wavelength of the luminous combination level energy gaps of three quantum well layers can in spectrogram from the first emission wavelength according to
Descending is arranged.
Using this construction, luminescent spectrum width can be increased while height output is realized.
Multiple quantum well layers can be configured with different compositions.
Multiple quantum well layers can be configured with different trap width.
It is such active layer structure according to the active layer structure of this technology, including：First with current blocking structure
Conductive layer, current injection area domain narrows in current blocking structure；Second conductive layer；And it is arranged on the first conductive layer and second
Active layer between conductive layer.
Active layer includes multiple quantum well layers, wave-length coverage of first emission wavelength in the intensity peak of whole luminescent spectrum
Interior, the first emission wavelength corresponds to the luminous combination level energy gap of the first quantum well layer of multiple quantum well layers, first amount
Sub- well layer is arranged on the position closest to the current blocking structure.
Above-mentioned semiconductor light-emitting elements are included according to the display device of this technology；And image generation unit, it can two
The light that the scanning of dimension ground is launched from the semiconductor light-emitting elements, and the brightness of the projection light is controlled based on view data.
The beneficial effect of invention
As described above, according to this technology, it is possible to achieve wide spectrum width and height output.
It should be noted that effect described herein is not necessarily restricted, and can be any described in the disclosure
Effect.
Brief description of the drawings
[Fig. 1] Fig. 1 part A is showing for the SLD for the semiconductor light-emitting elements for being shown as the embodiment according to this technology
Meaning property perspective view, and Fig. 1 part B is its plan.
It is the sectional view along the line C-C interceptions in Fig. 1 part B on the left of [Fig. 2] Fig. 2.
[Fig. 3] Fig. 3 schematically shows the first amount that wherein most carrier injections are located most closely to the position of spine
State in sub- well layer
[Fig. 4] Fig. 4 shows the shape of the shape of SLD whole luminescent spectrum and the luminescent spectrum of each quantum well layer.
[Fig. 5] Fig. 5 part A, which is shown, includes the active layer structure of five or more quantum well layers, and Fig. 5 portion
B is divided to show its luminescent spectrum.
[Fig. 6] Fig. 6 shows the analog result of the improvement of the output depending on Injection Current.
[Fig. 7] Fig. 7 shows the analog result of the improvement of spectral width.
[Fig. 8] Fig. 8 is the meter for showing to correspond in the case where changing the composition of active layer film the emission wavelength of band gap
Calculate the figure of result.
[Fig. 9] Fig. 9 part A, which is shown, is configured such that the trap of the quantum well layer corresponding to multiple active layer films is wide
The band structure of the different active layer structure of degree.Fig. 9 part B is shown in the case where the trap width of quantum well layer changes
The figure of the result of calculation of gain maximum wavelength.
[Figure 10] Figure 10 is schematically shown to be made using the semiconductor light-emitting elements of any one in above-described embodiment
For the construction of the display device of light source.
[Figure 11] Figure 11 is the figure for describing the difference between energy gap and luminous combination level energy gap.
Embodiment
Hereinafter, the embodiment of this technology is described with reference to the accompanying drawings.In the following description, using such as representing direction
The term of " on ", " under ", " right side " and " left side " make the description simple, and do not limit the device or element according to the present embodiment.
1. according to the general principle of the semiconductor light-emitting elements of the present embodiment
(overall structures of semiconductor light-emitting elements)
Fig. 1 part A is the perspective schematic view for the semiconductor light-emitting elements for showing the embodiment according to this technology, and
Fig. 1 part B is its plan.It is the sectional view along the line C-C interceptions in Fig. 1 part B on the left of Fig. 2.The semiconductor is sent out
Optical element is, for example, to include the ridge superluminescent diode (SLD) of the spine 10 as p-type or n-type conductive layer.
From the point of view of at the top of Fig. 2 left side, SLD 100 includes：P-type electrode layer 11 (or with contacting that p-type electrode layer is contacted
Layer (not shown))；It is used as the first conductive layer 13 of p-type semiconductor layer；Active layer 20；It is conductive as the second of n-type semiconductor layer
Layer 14；N-type semiconductor substrate 15；N-type electrode layer 12 (or the contact layer (not shown) contacted with n-type electrode layer).
First conductive layer 13 includes the p-type cladding layer (cladding layer) 131 sequentially formed from the side of p-type electrode layer 11
With p-type guide layer 132.Second conductive layer 14 includes n-type and guides layer by layer 141 and the shape successively from the side of substrate 15 of n-type cladding layer 142
Into.For example, p-type electrode layer 11 and p-type cladding layer 131 constitute spine 10.It can be carried between the conductive layer 14 of substrate 15 and second
For N-type buffer layer.
For example, spine 10 is formed along the dimension linear perpendicular to light emitting end face 33.First conductive layer 13 has electricity
Flow narrow structures 32.Specifically, using the structure of spine 10, form and be configured such that from p-type electrode layer 11 to active layer
The current blocking structure 32 that 20 current injection area domain narrows.Therefore, near the spine 10 in active layer 20, formed along ridge
Longitudinal fiber waveguide in portion 10.
On p-type guide layer 132 or around spine 10, insulating barrier (not shown) is formed.
Note, although the lower end of p-type cladding layer 131 corresponds to the lower end of spine 10, it is not necessarily required to right with it
Should, and the lower end of spine 10 can include the p-type guide layer 132 of part.
As shown in Fig. 1 part B, low mirror coating 18 is set on SLD 100 light emitting end face 33, in its opposite side
End face 35 on set high reflection mirror film 19.In the light spontaneously launched from active layer 20, towards the side of high reflection mirror film 19
Light is reflected on high reflection mirror film 19, is exaggerated in the way for reaching light emission surface side, and via low mirror coating 18
It is launched.
(structure of active layer)
Next, will describe according to the active layer structure of the present embodiment.Active layer 20 is schematically shown on the right side of Fig. 2
Band structure.Horizontal direction represents energy, and energy is higher towards left side.Vertical direction represents to constitute SLD 100 layer
Stacked direction.The energy band of the low side of energy is valence band (valence band), and the energy band of the high side of energy is conductance band
(conductance band)。
The active layer 20 includes multiple quantum well layer 20a, is multiple quantum well active layer 20.Specifically, active layer 20 is wrapped
Include multiple quantum well layer 20a and the multiple barrier layer 20b being disposed there between.Multiple quantum well layer 20a actually include many
Individual active layer film (film for corresponding to quantum well layer).In Fig. 2 left side, multiple active layer films are not shown, and represent
For an active layer 20.
Quantum well layer 20a width t (hereinafter referred to as trap width) corresponds to the thickness of active layer film.In addition, one
Or multiple barrier layer 20b actually include one or more block films.Each quantum well layer 20a trap width is essentially identical.
One in the multiple quantum well layer 20a set at the position near current blocking structure 32 (i.e. at spine 10)
Individual quantum well layer 20a is referred to below as the first quantum well layer 201.Active layer 20 is configured such that and the first quantum well layer 201
The corresponding emission wavelength (hereinafter referred to as the first emission wavelength) of luminous combination level energy gap be in SLD 100 luminescent spectrum
In the wave-length coverage of the intensity peak of (SLD 100 whole luminescent spectrum).
Specifically, active layer 20 include having in multiple quantum well layer 20a correspond to it is longer than the first emission wavelength by the
One or more quantum well layers 202 (hereinafter referred to as the second quantum well layer) of the luminous combination level energy gap of two emission wavelengths.This
Outside, active layer 20 includes having corresponding to second emission wavelength shorter than the first emission wavelength in multiple quantum well layer 20a
One or more quantum well layers 203 (hereinafter referred to as the 3rd quantum well layer) of luminous combination level energy gap.Specifically, each second
The luminous combination level energy gap of quantum well layer 202 is less than the luminous combination level energy gap of the first quantum well layer 201, and each the
The luminous combination level energy gap of three quantum well layers 203 is more than the luminous combination level energy gap quantum well layer of the first quantum well layer 203
201.Note, on Fig. 2 right side, be shown in which to be provided with second quantum well layer 202 and the 3rd quantum well layer 203
Active layer band structure so that description is simple.
As shown in figure 3, being located most closely to the position of spine 10 in the presence of most carrier (being electron hole here) injections
The first quantum well layer 201 in characteristic.It is whole that active layer is configured such that the emission wavelength of the first quantum well layer 201 corresponds to
The wave-length coverage of the intensity peak of individual luminescent spectrum.It is thereby achieved that height output as far as possible is luminous.
Note, although figure 3 illustrates from conduction band (conduction band) inject electron hole, this be in order that
Figure is simple, and electron hole is initially from valence band injection.
Fig. 4 shows the shape of the shape of the whole luminescent spectrum of active layer 20 and each quantum well layer 20a luminescent spectrum
Shape.In Fig. 4, vertical direction shows to export (it can be intensity or gain).With the characteristic represented by reference 251
Just there is the light of the first emission wavelength in the wave-length coverage of intensity peak.With the characteristic represented by reference 252
Just have second emission wavelength longer than the first emission wavelength light.Light with the characteristic represented by reference 253
It is the light with threeth emission wavelength shorter than the first emission wavelength.SLD 100 active layer 20 can for example be launched with bag
Include the light of the optical emission spectroscopy of these three wave-length coverages.
As described above, in the active layer structure according to the present embodiment, it is possible to achieve wide luminescent spectrum width and height is defeated
Go out (high-gain).
The example of the material of active layer 20 includes following material.In bracket, wave-length coverage (including intensity peak is shown
Or the wave-length coverage of centre wavelength).
AlGaN (ultraviolet regions400nm)
InGaN(4001000nm, practical region is 400550nm, bluish violetGreen)
AlGaInP(550900nm, practical region is 630680nm, red)
AlGaAs(750850nm, region of ultra-red)
InGaAs(800980nm, region of ultra-red)
InGaAsP(1.21.6 μm, region of ultra-red)
(difficulty of wide spectral width and height output on realizing)
In order to realize the light of height output, such as following means：1) substantial amounts of electric current is injected into SLD；2) fiber waveguide is increased
Length；It is contemplated that with 3) increase ridge width.However, these means have the following problems.
In the case where 1) injecting a large amount of electric currents, in order to realize the burden increase of the heat dissipation in height output, SLD encapsulation,
The reason for this is cost increase, because the upper limit is limited by the hot saturation exported.In addition, injecting the situation of a large amount of electric currents
Under, because SLD is also easy to vibration in the case of slight end face reflection, it is therefore desirable to make SLD with significantly lower than above-mentioned
The current work of the temporal electric current of hot saturation.
2) increase fiber waveguide length in the case of, due to light before light is fetched to outside in longer path
It is exaggerated, so the intensity increase of light, but have the following disadvantages.
One has the disadvantage that promotion passes through the amplification of the light of stimulated emission, and it influences the shape of optical emission spectroscopy.Specifically, with
The length of fiber waveguide, you can with the length increase in the path for amplifying light, luminescent spectrum width reduces.Therefore, low coherence drops
Low (easily disturbing).In other words, low coherence and output are in balance (trade-off) relation.
Another has the disadvantage the size increase of semiconductor light-emitting elements, and this size for being unsuitable for encapsulation reduces, and entirely
Waveguide loss increase, this may reduce light conversion efficiency.
In the case of 3) increase ridge width, the density of electric current can be concentrated by reducing and increase photoemissive area come
Increase output.However, the width for the light beam to be exported adds corresponding amount, and light source is difficult to use in application.
Therefore, ridge width also has the upper limit.In addition, also existing, by increasing, the quantity for the pattern that ridge width can be guided is increased to ask
Topic.
4) as another method for the light for realizing height output, it is contemplated that when spontaneously launching light before light is exaggerated
Increase the method for spectral width.However, in order to achieve this it is needed changing design, for example, separating in corresponding light-emitting zone
Injecting electrode, or only change the region that will be made up of different active layer materials or with different active layer structures.
In the previous case, it is necessary to separate electrode and drive them with single driver, and structure is uneconomical.In latter feelings
Under condition, because structure is very difficult to manufacture, for example, crystal needs regrowth, so cost is very high.First, in both approaches
In, because the electric current to be consumed may substantially increase, so the efficiency of light source is further reduced.
(summary)
Using the SLD100 according to the present embodiment, by by the first quantum well layer with highest Carrier Injection Efficiency
201 the first emission wavelength is placed in the center of SLD100 luminescent spectrum width, it can be ensured that height output.In addition, by making it
Its quantum well layer plays a part of increasing spectral width, it is possible to achieve wide spectral width and high output.This expression overcomes
The problem of above-mentioned " trade-off relationship between low coherence and output ".
In addition, being included according to the active layer 20 of the present embodiment：With luminous corresponding to longer than the first emission wavelength second
Second quantum well layer 202 of the luminous combination level energy gap of wavelength；With corresponding to than luminous multiple with the first quantum well layer 201
Close the 3rd quantum well layer of the luminous combination level energy gap of the 3rd short emission wavelength of the corresponding emission wavelength of energy level energy gap
203.It is thus possible to increase the luminescent spectrum width centered on the first emission wavelength, while realizing height output.
Self-evident, the quantum well layer 20a of active layer 20 quantity is not limited to three, and can be four or more
It is individual.Specifically, three or more quantum well layers in addition to the first quantum well layer 201 can be set.For example, can set
Multiple second quantum well layers 202 and multiple 3rd quantum well layers 203.As shown in Fig. 5 part A, except near current blocking
Outside first quantum well layer 201 of structure 32 (referring to Fig. 2 left side), quantum well layer 20a-2,20a-3,20a-4,20a-
5 ... quantity, preferably more than 4.Quantum well layer 20a sum is 5 to 30, preferably 10 to 20.
Specifically, quantum well layer 20a-2,20a-4 ... away from the first quantum well layer 201 direction on be alternately arranged,
With to be longer than the emission wavelength of the first emission wavelength from the first emission wavelength in the spectrogram shown in Fig. 5 part B with
Ascending order is arranged.In Fig. 5 part B, the luminescent spectrum of the first quantum well layer 201 (20a-1) is represented by reference a.Quantum
Well layer 20a-2 luminescent spectrum is represented that quantum well layer 20a-4 luminescent spectrum is represented by reference d by reference b.
On the other hand, quantum well layer 20a-3,20a-5 ... along away from the first quantum well layer 201 direction replace cloth
Put, be arranged in decreasing order with to be shorter than the emission wavelength of the first emission wavelength from the first emission wavelength.In Fig. 5 part B,
Quantum well layer 20a-3 luminescent spectrum is represented that quantum well layer 20a-5 luminescent spectrum is by reference e tables by reference c
Show.
Using this structure of active layer 20, it can further increase luminescent spectrum width, while realizing height output.
In addition, using the active layer structure according to the present embodiment, the electric current of current blocking structure 32 can be linearly formed
Injection region (being in the present embodiment spine 10).Specifically, it need not form the bending described in above-mentioned patent document 1
Spine, and may insure to design and the easiness that manufactures and reduce cost.In addition it is also possible to which existing design is used for except having
The design of layer outside active layer 20.
At least two in multiple quantum well layer 20a can have the luminous combination level energy gap of identical.This is also applied for
It is arranged on closest to the first quantum well layer 201 at the position of current blocking structure 32.That is, it is closest to be arranged on second
The luminous combination level energy gap 32 of quantum well layer at the position of current blocking structure can have near current blocking knot
The luminous combination level energy gap of quantum well layer identical set at the position of structure 32.
In addition, according to this embodiment, it can using " thin quantum well layer " with high quantum effect, and being conducive to current-carrying
The effective of son uses.Therefore, above-mentioned height output and wide spectral width can be not only realized, and temperature characterisitic can be realized
Improve." temperature characterisitic " is somebody's turn to do to will be described later.
(according to the example of more specifically checking and the effect of the active layer of the present embodiment)
Fig. 6 shows the analog result of the improvement of the output depending on Injection Current.As shown in fig. 6, by solid line table
The curve map shown according to the active layer structure of the present embodiment by obtaining, and the material of wherein active layer is AlGaInP, and active
Rotating fields include three quantum well layers with thin trap width T1.The gap of luminous combination level energy gap is from centre wavelength ± several
nm.On the other hand, the curve map being illustrated by the broken lines passes through according to the active layer structure acquisition with reference to example, the wherein material of fiber waveguide
Material and length and identical in the case of being represented by solid line, and active layer structure includes having the one of thickness trap width (3 × T1)
Individual quantum well layer.
The output in high current injection zone, which is can be seen that, from the result improves 20% to 30%, and according to this reality
Quantum effect can be efficiently used by applying the SLD 100 of example.Although defeated in the case of according to the active layer structure with reference to example
Go out and start saturation in the region of maximum current, but exported in the active layer structure according to the present embodiment unsaturated.Therefore,
Expect to exist according to the output of the active layer structure of the present embodiment and according to the difference between the output with reference to the active layer structure of example
More than further increasing in the galvanic areas of the maximum current.Specifically, in the present embodiment, because in semiconductor light-emitting elements
High current operation when is in the condition of high temperature itself also improves, and high-temperature operation is also superior to referring to example.Specifically, as described above,
Improve " temperature characterisitic ".
Fig. 7 shows the analog result of the improvement of spectral width.On the vertical axis of figure, output is standardization.
Dotted line and solid line all represent the curve map of the active layer structure according to the present embodiment.Dotted line represents to show with waveguide lengths L1
Active layer structure characteristic curve map.Solid line represents to show the two double-length (light that the length in only fiber waveguide is said reference
2 × L1 of waveguide length) in the case of active layer structure characteristic curve map.Even if can be seen that fiber waveguide from the result
Length doubles to increase output, can also keep with full width at half maximum (a full width at half maximum)
83% spectral width.
On the other hand, on according to the active layer structure (including one with 3 × T1nm of above-mentioned trap width with reference to example
Quantum well layer), by compare the active layer structure (refer to example 1) with waveguide lengths L1 with waveguide lengths 2 ×
L1 (refer to example 2) active layer structure and the result that obtains is as described below.Specifically, with the active layer according to reference example 1
Structure is compared, and is reduced by as much as 55% according to the spectral width of the active layer structure with reference to example 2 with full width at half maximum.It therefore, it can
Find out, the light in the wherein active layer structure according to the present embodiment of 85% spectral width with full width at half maximum can be kept
The improvement of spectral width is very high.
On the other hand, when poor excessive between the emission wavelength of multiple quantum well layers, there is peak value and be divided or waveguide
The affected worry of pattern.However, it is believed that for example when difference is about a few nm, it is computed, and will not occur
So the problem of.Result, it is believed that for example by further increasing the quantity of quantum well layer, even if when the entirety of luminescent spectrum width
During for more than 10nm, the problem of also no practical.
In order to further improve the characteristic of active layer 20, the thickness for being expected that by further reducing active layer film comes effective
Ground uses carrier, and the thickness of active layer film is reduced to unfertile land as far as possible and reaches that crystallinity will not be damaged on epitaxy technique
The level of mistake.
Can be the product with the reliability equal with LD reliability according to the SLD 100 of the present embodiment, because SLD
100 using the multi-quantum pit structure also used in LD.In addition, the raising using the luminous efficiency of multi-quantum pit structure is also resulted in
The raising of energy efficiency.
In the present embodiment, as long as low output is subjected in the application, by suitably arranging that quantum well layer is possible to
Realized with higher efficiency with luminous compared with low coherence.For example, can easily realize that about 10nm luminescent spectrum is wide
Degree, the length without greatly reducing fiber waveguide.
In addition, in the image intensifer with the operation principle similar with SLD operation principle, it is contemplated that realize similar effect
Really.That is, in the image intensifer with the structure equivalent with active layer structure according to the present embodiment, expecting to increase
It is big to amplify wave-length coverage and amplification efficiency be improved.
2. according to the specific device for being used to realize active layer structure of the present embodiment
(example 1 of specific method)
As the means of the said structure for realizing active layer 20, for example, active layer 20 only needs to be configured such that
The composition of the material of each active layer film (film for constituting quantum well layer 20a) is different.Utilize this structure, it is possible to achieve bag
Include the active layer 20 of multiple quantum well layer 20a with different luminous combination level energy gaps.
Fig. 8 is the result of calculation for showing to correspond in the case where changing the composition of active layer film the emission wavelength of band gap
Figure.Transverse axis represents the composition (also referred to as ratio of components) of the In and Al in such as AlGaInP.In trunnion axis, with AlGaInP
Middle Al composition increase, In composition reduces.When Al composition is 0.5, In composition is also 0.5.Note, when Al composition
During not less than 0.7, the band structure with indirect band gap is shown.
As noted previously, as the composition of active layer film is different, therefore it can realize and various luminous combination level energy gaps
Corresponding emission wavelength.
Note, the example shown in Fig. 8 is the Al from the composition for being configured such that the AlGaInP that can launch feux rouges
What the active layer structure different with In composition was obtained.However, in addition to Al and In composition, in AlGaInP composition
The composition of at least one material can be different.This is also applied for the above-mentioned active layer based on GaN and based on GaAs.
Now, the difference of " luminous combination level energy gap " between " band gap (energy gap) " will be described.As shown in figure 1,
Band gap is that across gap generation is combined and launched when active layer has relatively large thickness and there is no quantum effect
The energy gap of light.On the other hand, the combination level energy gap that lights is the energy gap that energy subband is formed in the quantum level shown in Figure 11, when
When quantifying active layer, occur to be combined on the subband, and launch light.Band gap represents mainly to be determined by the material of active layer
Value, and luminous combination level energy gap represents the value that is determined by the material and trap width of active layer.
(embodiment 2 of specific method)
As another means of the structure for realizing above-mentioned active layer, Fig. 9 part A shows the energy of active layer 20
Band structure, the active layer 20 is configured such that the quantum well layer (first quantum well layer) corresponding with multiple active layer films
201st, the second quantum well layer 202 is different with the trap width of the 3rd quantum well layer 203.According to the active layer structure of the present embodiment by with
It is set to so that different from the trap width of the corresponding quantum well layer of each active layer film.Because trap width is different, therefore can be with
Realizing includes the active layer 20 of multiple quantum well layers 201,202 and 203 with different luminous combination level energy gaps.
Fig. 9 part B is the calculating knot for showing the gain maximum wavelength in the case where the trap width of quantum well layer changes
The figure of fruit.As the material of active layer, AlGaInP is used.Note, " gain maximum wavelength " is substantially and luminous combination level
The corresponding emission wavelength of energy gap.
It is can be seen that from Fig. 9 part B because the trap width of quantum well layer is different, therefore can realize and be configured as making
Obtain the different active layer structure of emission wavelength.
Technology in the example can also be applied similarly to by the material in addition to it can launch the AlGaInP of feux rouges
What is be made is above-mentioned based on GaN and based on GaAs active layers.
Note, be not necessarily required to using the structure shown in Fig. 9, and the quantity of quantum well layer can be more than four (examples
Such as 5 to 30, preferably 10 to 20), and wherein at least two can have identical trap width, similar to above-mentioned interior
Hold.
(example of the specific effect of the above-mentioned example 1 and 2 of specific means)
Because only can be manufactured according to the SLD 100 of the present embodiment by changing the partial condition in epitaxial growth, institute
It is barely affected with whole technique.
EDX (energy dispersion X-ray) analyses or WDX (ripples can then be passed through by using TEM (transmission electron microscope)
Long dispersion X-ray) analyzed to detect the composition of active layer.Specifically, it is sufficient to detection warp because the latter has
The detection performance (being not more than 0.1%) of the composition poor (about 1%) of clearly wavelength difference is generated by it, therefore can be divided completely
Analysis.
3. display device
Figure 10, which is schematically shown, uses the SLD as the semiconductor light-emitting elements according to above-described embodiment as light source
Display device configuration.The display device 200 is the projecting apparatus using raster-scan method.
Display device 200 includes image generation unit 70.Image generation unit 70 is configured to from as light source
The light of semiconductor light-emitting elements transmitting carry out two-dimensional scan, for example perform raster scanning, and control based on view data to throw
The brightness for the light penetrated on the irradiation surface 105 of such as screen and wall surface.
Image generation unit 70 for example mainly includes horizontal scanner 103 and orthoscanner 104.From red emission SLD
The light beam that 100R, green emission SLD 100G and blue emission SLD 100B are sent respectively by colour splitting prism 102R, 102G and
102B is gathered into a branch of.The light beam is scanned by horizontal scanner 103 and orthoscanner 104 and projects illuminated surface 105
On, so that display image.
Note, at least one sent in the semiconductor light-emitting elements of RGB color light is only required to be SLD, and other members
Part can be conventional LD.
For example, horizontal scanner 103 and orthoscanner 104 can be respectively by the groups of polygonal mirror and Galvano scanners
Close and constitute.In this case, as the device for controlling brightness, for example, it is injected into using control in semiconductor light-emitting elements
Electric current circuit.
Or, as horizontal scanner and orthoscanner, it can use such as by MEMS (MEMS) technology system
The DMD (DMD) made two-dimentional optical modulation element.
Or, image generation unit 70 can be by the one-dimensional optical modulation element of such as GLV (grating light valve) element and upper
The combination of one-dimensional scanning mirror is stated to configure.
Or, image generation unit 70 can include index modulation type scanner, such as acoustooptical effect scanner and electricity
Luminous effect scanner.
4. other various embodiments
This technology is not limited to above-described embodiment, and can realize other various embodiments.
It is luminous with difference in addition to the structure different with trap width except the composition of wherein active layer film as described above
The semiconductor light-emitting elements of wavelength can also be realized by following active layer structure.For example, active layer structure can be configured
Composition for the material by making each barrier layer between active layer film is different with thickness so that being sent out in quantum well layer
The direction of raw distortion and/or distortion rate are different.
Or, also utilize the concentration of dopant of quantum well layer, it is possible to achieve the active layer structure with multiple emission wavelengths.
Although being three or more according to the quantity of the quantum well layer of the active layer structure of above-described embodiment, it can
To be two.
It is configured so that current blocking structure 32 that current injection area domain narrows is not limited to be formed the structure of ridge part 10.Example
Such as, current blocking structure can be embedded structure or embedded ridge structure.
Although having used n-type substrate in the above-described embodiments as substrate 15, p-type substrate can be used, and
The semiconductor layer for constituting current blocking structure can be n-type substrate.In this case, " first is conductive " is n-type, and " second leads
Electricity " is p-type.
Had a structure in which according to the semiconductor light-emitting elements of above-described embodiment, wherein current blocking structure 32 is located at base
The side opposite with active layer 20 of piece 15.However, current blocking structure can be positioned at (n-type or p-type) substrate and active layer 20
Identical side.Note having compared with semiconductor light-emitting elements in structure according to the semiconductor light-emitting elements of above-described embodiment
There is high-cooling property, there is the semiconductor light-emitting elements wherein current blocking structure to be located at the structure with substrate phase homonymy.
The quantity of the first quantum well layer 201 with the luminous combination level energy gap corresponding to peak light emission wavelength can be with
It is two or more.In this case, these first quantum well layers 201 are opened near the position of current blocking structure 32
Beginning is arranged in order.Similarly, can provide multiple second quantum well layers with identical luminous combination level energy gap and/there is phase
Multiple 3rd quantum well layers of same luminous combination level energy gap.
In the embodiment shown in Fig. 3 and Fig. 4, second near current blocking structure after the first quantum well layer 201
32 quantum well layer has described as the second quantum well layer 202 with the emission wavelength longer than the first emission wavelength.However,
After the first quantum well layer 201 second closest to the quantum well layer of current blocking structure 32 can be that there is ripple more luminous than first
3rd quantum well layer 203 of the emission wavelength of length.
At least two features in the feature of above-described embodiment can be combined.
It should be noted that this technology can take following configuration.
(1) a kind of semiconductor light-emitting elements, including：
The first conductive layer with current blocking structure, the current injection area domain narrowed in the current blocking structure；
Second conductive layer；And
Active layer, is arranged between the first conductive layer and the second conductive layer, and the active layer includes multiple quantum well layers, the
One emission wavelength is in the wave-length coverage of the intensity peak of whole luminescent spectrum, and first emission wavelength corresponds to the multiple
The luminous combination level energy gap of the first quantum well layer in quantum well layer, first quantum well layer is arranged on closest to the electricity
At the position for flowing narrow structures.
(2) semiconductor light-emitting elements according to claim 1, wherein,
The active layer includes
One or more second quantum well layers, one or more of second quantum well layers, which have, to be corresponded to than described first
The luminous combination level energy gap of second emission wavelength of emission wavelength length, and
One or more 3rd quantum well layers, one or more of 3rd quantum well layers, which have, to be corresponded to than described first
The luminous combination level energy gap of the 3rd short emission wavelength of emission wavelength.
(3) semiconductor light-emitting elements according to claim 2, wherein,
The active layer is included respectively as one or more of second quantum well layers and the one or more of 3rd
Multiple second quantum well layers and multiple 3rd SQWs of quantum well layer, the multiple second quantum well layer has multiple different
Luminous combination level energy gap, the multiple 3rd SQW has multiple different luminous combination level energy gaps, and
Second quantum well layer and the 3rd quantum well layer replace on the direction away from first quantum well layer
Arrangement, so that luminous with the multiple second quantum well layer in the spectrogram for representing the relation between emission wavelength and output
The corresponding emission wavelength of combination level energy gap from the first emission wavelength in ascending order, with the multiple 3rd quantum well layer
The corresponding emission wavelength of the combination level that lights energy gap is arranged in decreasing order in the spectrogram from first emission wavelength.
(4) semiconductor light-emitting elements according to any one of claim 1 to 3, wherein,
The multiple quantum well layer is configured with different compositions.
(5) semiconductor light-emitting elements according to any one of claim 1 to 3, wherein,
The multiple quantum well layer is configured with different trap width.
(6) a kind of active layer structure, including：
The first conductive layer with current blocking structure, the current injection area domain narrowed in the current blocking structure；
Second conductive layer；And
The active layer between first conductive layer and second conductive layer is arranged on, wherein,
The active layer includes multiple quantum well layers, wavelength of first emission wavelength in the intensity peak of whole luminescent spectrum
In the range of, the luminous combination level energy gap for the first quantum well layer that first emission wavelength corresponds in multiple quantum well layers,
First quantum well layer is arranged on closest at the position of the current blocking structure.
(7) a kind of display device, including：
Semiconductor light-emitting elements；And
Image generation unit, it can two-dimensionally scan the light launched from the semiconductor light-emitting elements, and based on figure
As the brightness of the projected light of data control, wherein
The semiconductor light-emitting elements include
First conductive layer, it has current blocking structure, and current injection area domain narrows in the current blocking structure,
Second conductive layer, and
Active layer, is arranged between first conductive layer and second conductive layer, and active layer includes multiple SQWs
Layer, the first emission wavelength is in the wave-length coverage of the intensity peak of whole luminescent spectrum, and first emission wavelength corresponds to institute
The luminous combination level energy gap of the first quantum well layer in multiple quantum well layers is stated, first quantum well layer is arranged on closest
At the position of the current blocking structure.
Reference numerals list
10 spines
11 p-type electrode layers
12 n-type electrode layers
13 first conductive layers
14 second conductive layers
15 substrates
20b barrier layers
20a quantum well layers
20 active layers
20a (201,202,203) quantum well layer
32 current blocking structures
70 image generation units
100 SLD
100G green emissions SLD
100B blue emissions SLD
102R red emissions SLD
200 display devices
201 first quantum well layers
202 second quantum well layers
203 the 3rd quantum well layers
Claims (7)
1. a kind of semiconductor light-emitting elements, including：
The first conductive layer with current blocking structure, current injection area domain narrows in the current blocking structure；
Second conductive layer；And
Active layer, is arranged between first conductive layer and second conductive layer, and the active layer includes multiple SQWs
Layer, the first emission wavelength is in the wave-length coverage of the intensity peak of whole luminescent spectrum, and first emission wavelength corresponds to institute
The luminous combination level energy gap of the first quantum well layer in multiple quantum well layers is stated, first quantum well layer is arranged on closest
At the position of the current blocking structure.
2. semiconductor light-emitting elements according to claim 1, wherein,
The active layer includes
One or more second quantum well layers, one or more of second quantum well layers have with than first emission wavelength
The corresponding luminous combination level energy gap of the second long emission wavelength, and
One or more 3rd quantum well layers, one or more of 3rd quantum well layers have with than first emission wavelength
The corresponding luminous combination level energy gap of the 3rd short emission wavelength.
3. semiconductor light-emitting elements according to claim 2, wherein,
The active layer is included respectively as one or more of second quantum well layers and one or more of 3rd quantum
Multiple second quantum well layers and multiple 3rd SQWs of well layer, the multiple second quantum well layer have multiple different light
Combination level energy gap, the multiple 3rd SQW has multiple different luminous combination level energy gaps, and
Second quantum well layer and the 3rd quantum well layer are alternately arranged on the direction away from first quantum well layer,
It is luminous compound with the multiple second quantum well layer so as in the spectrogram for representing the relation between emission wavelength and output
The corresponding emission wavelength of energy level energy gap from the first emission wavelength in ascending order, it is luminous with the multiple 3rd quantum well layer
The corresponding emission wavelength of combination level energy gap is arranged in decreasing order in the spectrogram from first emission wavelength.
4. semiconductor light-emitting elements according to claim 1, wherein,
The multiple quantum well layer is configured with different compositions.
5. semiconductor light-emitting elements according to claim 1, wherein,
The multiple quantum well layer is configured with different trap width.
6. a kind of active layer structure, including：
The first conductive layer with current blocking structure, current injection area domain narrows in the current blocking structure；
Second conductive layer；And
Active layer, is arranged between first conductive layer and second conductive layer, wherein,
The active layer includes multiple quantum well layers, wave-length coverage of first emission wavelength in the intensity peak of whole luminescent spectrum
Interior, the luminous combination level energy gap for the first quantum well layer that first emission wavelength corresponds in multiple quantum well layers is described
First quantum well layer is arranged on closest at the position of the current blocking structure.
7. a kind of display device, including：
Semiconductor light-emitting elements；And
Image generation unit, can two-dimensionally scan the light launched from the semiconductor light-emitting elements and be based on view data control
The brightness of the projected light of system, wherein
The semiconductor light-emitting elements include
First conductive layer, with current blocking structure, current injection area domain narrows in the current blocking structure,
Second conductive layer, and
Active layer, is arranged between first conductive layer and second conductive layer, and active layer includes multiple quantum well layers, the
One emission wavelength is in the wave-length coverage of the intensity peak of whole luminescent spectrum, and first emission wavelength corresponds to the multiple
The luminous combination level energy gap of the first quantum well layer in quantum well layer, first quantum well layer is arranged on closest to the electricity
At the position for flowing narrow structures.
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| WO2014051137A1 (en) * | 2012-09-28 | 2014-04-03 | Canon Kabushiki Kaisha | Optical semiconductor device, driving method thereof, and optical coherence tomography apparatus having the optical semiconductor device |
| CN104009391A (en) * | 2013-02-25 | 2014-08-27 | 索尼公司 | Semiconductor light-emitting element, method for producing the same, and display apparatus |
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