CN106998522B - Micro-capacitance ultrasonic sensor - Google Patents
Micro-capacitance ultrasonic sensor Download PDFInfo
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- CN106998522B CN106998522B CN201610048961.9A CN201610048961A CN106998522B CN 106998522 B CN106998522 B CN 106998522B CN 201610048961 A CN201610048961 A CN 201610048961A CN 106998522 B CN106998522 B CN 106998522B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
Abstract
The invention discloses a micro-capacitance ultrasonic sensor, which comprises: the upper surface of the substrate is also provided with a lower sealing coil which is used for sealing and encircling the lower electrode assembly, the lower surface of the upper film is concavely provided with a containing cavity used for containing the lower electrode assembly and an upper sealing coil which is used for sealing and encircling the containing cavity, and the upper film and the substrate are in butt joint sealing with the containing cavity at least through the upper sealing coil and the lower sealing coil. The micro-capacitance ultrasonic sensor not only improves the tightness, but also blocks the exchange between the accommodating cavity in the micro-capacitance ultrasonic sensor and the external environment, and realizes the self-sealing function simply and with low cost; and the dissipation of parasitic capacitance to energy efficiency is avoided, and the conversion efficiency is enhanced.
Description
Technical Field
The invention belongs to the technical field of sensors, and particularly relates to a micro-capacitance ultrasonic sensor.
Background
Devices that convert electrical, mechanical, or acoustic energy from one form of energy to another are referred to as ultrasonic transducers. The ultrasonic sensor is a core component of an ultrasonic ranging, imaging and sonar system, and is widely applied to the fields of vehicle obstacle avoidance, medical diagnosis and treatment, ocean morphology detection, military target identification and the like. With the development of Micro Electro Mechanical System (MEMS) technology, micro Capacitive Ultrasonic Sensors (CMUTs) have been developed. Compared with the piezoelectric ultrasonic transducer in the prior art, the CMUT has the characteristics of small volume, light weight, low cost, low power consumption, capability of being arrayed, easiness in circuit integration and the like, and therefore has very important practical value in the fields of ultrasonic ranging, imaging, sonar systems and the like.
Conversion efficiency, which is a very important parameter of the CMUT, is the ratio of the transferred mechanical energy to the total stored energy of the sensor. The conversion efficiency has a decisive influence on the bandwidth of the CMUT, which in turn has a great influence on the performance of the CMUT. In the prior art, since the CMUT adopts a heavily doped common bottom electrode or upper electrode and a conductive film, a large amount of stray parasitic capacitance exists in the CMUT. However, the parasitic capacitance, especially the parallel parasitic capacitance, may reduce the conversion efficiency of the CMUT, narrow the bandwidth, and further reduce the performance of the CMUT. In addition, in the prior art, the cavity sealing means of the CMUT are mainly divided into two types, namely, sealing and filling of the corrosion hole is adopted, and direct sealing by silicon-silicon bonding is adopted. However, both of these methods still have drawbacks: firstly, unnecessary additional materials are introduced, secondly, the processing cost is increased due to complex process, and the Gao Chengpin yield is difficult to ensure. Whereas CMUTs with unsealed cavities are difficult to meet the requirements of in vivo, underwater etc. immersion applications; at the same time, the air damping of the unsealed cavity consumes the effective electric energy, mechanical energy or acoustic energy of the CMUT, reduces the conversion efficiency of the CMUT, and causes the performance of the CMUT to be reduced.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a micro-capacitance ultrasonic sensor which can realize self-sealing effect and improve tightness; and the dissipation of parasitic capacitance to energy efficiency is avoided, and the conversion efficiency is enhanced.
In order to achieve the aim of the invention, the invention adopts the following technical scheme:
a micro-capacitive ultrasonic sensor comprising: the electrode assembly comprises a substrate, a lower electrode assembly arranged on the upper surface of the substrate, an upper membrane and an upper electrode assembly arranged on the upper surface of the upper membrane, wherein the upper surface of the substrate is also provided with a lower sealing coil which is used for enclosing and encircling the lower electrode assembly, an accommodating cavity used for accommodating the lower electrode assembly and an upper sealing coil which is used for enclosing and encircling the accommodating cavity are concavely arranged on the lower surface of the upper membrane, and the upper membrane and the substrate are in butt joint sealing with the accommodating cavity at least through the upper sealing coil and the lower sealing coil.
Further, a lower bonding pad connected with the lower electrode assembly through a lower bonding pad lead is further arranged on the upper surface of the substrate, a lower bonding pad window corresponding to the lower bonding pad is formed in the upper film, the lower bonding pad window is located outside the area surrounded by the upper sealing coil in a sealing mode, and the lower bonding pad is exposed through the lower bonding pad window; the upper surface of the upper film is further provided with an upper pad connected with the upper electrode assembly through an upper pad lead.
Further, the lower pad window corresponds to the shape of the lower pad, and a gap is formed between an inner sidewall of the lower pad window and the lower pad.
Further, the micro-capacitance ultrasonic sensor further comprises an insulating layer sandwiched between the upper membrane and the upper electrode assembly.
Further, the upper electrode assembly includes an upper electrode interconnection lead and a plurality of upper electrodes connected to each other through the upper electrode interconnection lead, and the lower electrode assembly includes a lower electrode interconnection lead and a plurality of lower electrodes connected to each other through the lower electrode interconnection lead; and in the direction perpendicular to the substrate, the projections of the plurality of upper electrodes and the plurality of lower electrodes are correspondingly overlapped, and the projections of the corresponding upper electrode interconnection leads between the upper electrodes and the corresponding lower electrode interconnection leads between the lower electrodes are mutually intersected.
Further, the lower surface of the upper film is also concavely provided with an interconnection channel which penetrates through a plurality of accommodating cavities; the interconnection channels correspond to the lower electrode interconnection leads, and the depth of the interconnection channels is equal to that of the accommodating cavity.
Further, in the direction perpendicular to the substrate, the projections of the plurality of upper electrodes and the plurality of lower electrodes are within the projections of the corresponding accommodating cavities; and the depth of the accommodating cavity is larger than the thickness of the lower electrode corresponding to the accommodating cavity.
Further, the upper seal coil and the lower seal coil are annular coils connected end to end, and the upper seal coil is matched with the lower seal coil in shape.
Further, the upper seal coil and the lower seal coil are both metal coils.
Further, the substrate is made of glass, the upper film is made of silicon, and/or the upper film and the substrate are sealed in the accommodating cavity through anodic bonding.
The invention has the beneficial effects that:
(1) According to the micro-capacitance ultrasonic sensor, the lower sealing coil and the upper sealing coil which are identical in shape and opposite in position are arranged, and meanwhile, the lower sealing coil and the upper sealing coil are tightly butted and form metal bonding, so that the sealing performance is improved, the exchange between an accommodating cavity in the micro-capacitance ultrasonic sensor and an external environment is blocked, the self-sealing effect is realized simply and at low cost, and the problem of high immersion application cost caused by difficult sealing of a cavity in the micro-capacitance ultrasonic sensor in the prior art is avoided;
(2) According to the micro-capacitance ultrasonic sensor, the insulating substrate is adopted, and the patterned lower electrode and upper electrode, and the lower electrode interconnection lead and the upper electrode interconnection lead which are distributed in a crossing manner are combined, so that the parasitic capacitance is prevented from dissipating energy efficiency, the conversion efficiency is enhanced, and the problem of low conversion efficiency caused by high parasitic capacitance in the micro-capacitance ultrasonic sensor in the prior art is avoided.
Drawings
The above and other aspects, features and advantages of embodiments of the present invention will become more apparent from the following description when taken in conjunction with the accompanying drawings in which:
fig. 1 is a schematic structural view of a micro-capacitive ultrasonic sensor according to embodiment 1 of the present invention;
fig. 2 is a schematic view of the structure of a micro-capacitive ultrasonic sensor according to embodiment 1 of the present invention after removing an upper film;
FIG. 3 is a bottom view of the micro-capacitive ultrasonic sensor according to embodiment 1 of the present invention with the lower seal coil and substrate removed;
fig. 4 is a schematic structural view of a micro-capacitive ultrasonic sensor according to embodiment 2 of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and its practical application so that others skilled in the art will be able to understand the invention for various embodiments and with various modifications as are suited to the particular use contemplated. In the drawings, the shape and size of elements may be exaggerated for clarity, and the same reference numerals will be used throughout to designate the same or similar elements.
Example 1
Fig. 1 is a schematic structural view of a micro-capacitive ultrasonic sensor according to embodiment 1 of the present invention, fig. 2 is a schematic structural view of the micro-capacitive ultrasonic sensor according to embodiment 1 of the present invention after removing an upper film, and fig. 3 is a bottom view of the micro-capacitive ultrasonic sensor according to embodiment 1 of the present invention after removing a lower seal coil and a substrate.
Referring to fig. 1 to 3, the micro-capacitive ultrasonic sensor according to the present embodiment includes a substrate 1, an upper film 2, a lower seal coil 3, an upper seal coil 4, a lower electrode assembly 5, and an upper electrode assembly 6. The upper surface of the substrate 1 is provided with a lower electrode assembly 5 and a lower sealing coil 3 which surrounds the lower electrode assembly 5 in a sealing way, the upper surface of the upper film 2 is provided with an upper electrode assembly 6, and the lower surface of the upper film 2 is concavely provided with a containing cavity 21 for containing the lower electrode assembly 5, an interconnection channel 22 for communicating a plurality of containing cavities 21 and an upper sealing coil 4 which surrounds the containing cavities 21 in a sealing way. Wherein, the substrate 1 and the upper film 2 seal the accommodating cavity 21 through the butt joint action between the lower sealing coil 3 and the upper sealing coil 4; at the same time, the upper surface of the substrate 1 not covered by the lower seal coil 3 and the lower surface of the upper film 2 not covered by the upper seal coil 4 are also bonded together to further seal the housing chamber 21.
The lower sealing coil 3 and the upper sealing coil 4 are annular closed coils connected end to end, and the shape and the size of the lower sealing coil and the upper sealing coil are the same; in this embodiment, the lower seal coil 3 and the upper seal coil 4 are rectangular in shape, and both are made of metal, so that when they are butted together, a metal bond can be formed to perform the function of primarily sealing the accommodating cavity 21. Of course, the shapes of the lower seal coil 3 and the upper seal coil 4 are not limited to the rectangular shape described in the embodiment, but may be any annular closed coil such as a circular shape, a square shape, etc., and only the effect of the primary seal accommodating cavity 21 is required to be ensured by completely abutting the lower seal coil 3 and the upper seal coil 4.
In this embodiment, the substrate 1 is an insulating glass substrate, and the upper film 2 is silicon, so that an anodic bond can be formed between the upper surface of the substrate 1 not covered by the lower seal coil 3 and the lower surface of the upper film 2 not covered by the upper seal coil 4.
In this way, the micro-capacitance ultrasonic sensor according to the present embodiment seals the housing cavity 21 through the double bonding effect of the metal bonding between the lower seal coil 3 and the upper seal coil 4 and the anodic bonding between the upper membrane 2 and the substrate 1, thereby realizing self-sealing effect, blocking the exchange between the housing cavity 21 and the external environment, and improving the sealing performance of the micro-capacitance ultrasonic sensor.
Referring specifically to fig. 2, the lower electrode assembly 5 includes a lower electrode 51 and a lower electrode interconnection lead 52 connecting a plurality of the lower electrodes 51 to each other; referring specifically to fig. 1, the upper electrode assembly 6 includes an upper electrode 61 and an upper electrode interconnection lead 62 connecting a plurality of the upper electrodes 61 to each other.
In this embodiment, the lower electrode 51 corresponds to the accommodating cavity 21, the lower electrode interconnection lead 52 corresponds to the interconnection channel 22, and when the substrate 1 is attached to the upper film 2, the lower electrode 51 and the lower electrode interconnection lead 52 can be just and respectively clamped inside the accommodating cavity 21 and the interconnection channel 22, so that the size of the lower electrode 51 is required to be smaller than that of the accommodating cavity 21, and the size of the lower electrode interconnection lead 52 is also required to be smaller than that of the interconnection channel 22; that is, it is required that the projection of the lower electrode 51 is within the projection of the corresponding housing chamber 21 in the direction perpendicular to the substrate 1.
In this embodiment, the depth of the interconnecting channel 22 is consistent with the depth of the receiving cavity 21.
When the substrate 1 and the upper film 2 are butted together to form the micro-capacitance ultrasonic sensor, it should be ensured that the upper film 2 disposed above the substrate 1 can vibrate up and down within a certain range, so that it is required that the depth of the receiving cavity 21 for receiving the lower electrode assembly 5 should be greater than the thickness of the lower electrode 51.
Preferably, the upper electrode 61 and the lower electrode 51 are identical in shape and size and are circular. Meanwhile, the shapes of the upper electrode interconnection lead 62 connecting the upper electrodes 61 to each other and the lower electrode interconnection lead 52 connecting the lower electrodes 51 to each other are the same, and in this embodiment, both are chevron-shaped, and the upper electrode interconnection lead 62 and the lower electrode interconnection lead 52 are turned 180 ° around; that is, in the direction perpendicular to the substrate 1, the projections of the plurality of upper electrodes 61 and the plurality of lower electrodes 51 are correspondingly overlapped, and the projections of the upper electrode interconnection leads 62 between the corresponding upper electrodes 61 and the lower electrode interconnection leads 52 between the lower electrodes 51 are mutually intersected. In this way, the insulating substrate 1 is adopted, and the patterned lower electrode 51 and upper electrode 61, and the lower electrode interconnection lead 52 and upper electrode interconnection lead 62 which are distributed in a crossed manner are combined, so that the dissipation of parasitic capacitance to energy efficiency is avoided, and the conversion efficiency of the micro-capacitance ultrasonic sensor is enhanced.
Of course, the shapes of the lower electrode 51 and the upper electrode 61 are not limited to the circular shape described in the present embodiment, but may be any of other polygonal shapes such as square, rectangular, diamond, oval, triangular, and regular or irregular; meanwhile, the shapes of the lower electrode interconnection lead 52 and the upper electrode interconnection lead 62 are not limited to the chevron shape described in the present embodiment, and may be a cross shape or the like, as long as it is ensured that the two do not completely overlap in the vertical direction and that there is a crossover.
In order to more conveniently draw out the lower electrode assembly 5 and the upper electrode assembly 6, a lower pad assembly 7 and an upper pad assembly 8 are also provided on the upper surface of the substrate 1 and the upper surface of the upper film 2, respectively.
Specifically, the lower pad assembly 7 includes a lower pad 71 and a lower pad lead 72, and the upper pad assembly 8 includes an upper pad 81 and an upper pad lead 82; wherein the lower pad lead 72 horizontally penetrates the lower seal coil 3 and connects the lower electrode interconnection lead 52 with the lower pad 71, and the upper pad lead 82 connects the upper electrode interconnection lead 62 with the upper pad 81. Correspondingly, the upper film 2 is provided with a lower pad window 23 which is penetrated up and down and corresponds to the lower pad 71, the lower pad window 23 is positioned outside the area enclosed and surrounded by the upper sealing coil 4, and the lower pad 71 can be exposed through the lower pad window 23, so that the lower pad 71 can be led out from the upper surface of the upper film 2.
The lower pad window 23 corresponds to the shape of the lower pad 71, and a gap is further provided between the inner sidewall of the lower pad window 23 and the lower pad 71.
In the present embodiment, the shape of the lower pad 71 is square, and the shape of the upper pad 81 is circular, but the present invention is not limited thereto, and other shapes such as rectangle, diamond, ellipse, triangle, or other regular or irregular polygons may be used, and the shapes and sizes of the lower pad 71 and the upper pad 81 may not correspond; but corresponding to the lower pad 71, the shape of the lower pad window 23 should be identical to the lower pad 71, and the size of the lower pad 71 is required not to exceed the size of the lower pad window 23, so that when the substrate 1 and the upper film 2 are sealed to each other, the lower pad 71 located on the upper surface of the substrate 1 may be caught in the lower pad window 23, thereby drawing the lower pad 71 out through the top surface of the upper film 2.
Therefore, the micro-capacitance ultrasonic sensor of the embodiment not only can realize self-sealing effect, but also improves the tightness; and the dissipation of parasitic capacitance to energy efficiency is avoided, and the conversion efficiency is enhanced.
Example 2
In the description of embodiment 2, the same points as those of embodiment 1 are not described here again, and only the differences from embodiment 1 are described. Referring specifically to fig. 4, embodiment 2 differs from embodiment 1 in that: in the micro-capacitance ultrasonic sensor of embodiment 2, an insulating layer 9 interposed between the upper film 2 and the upper electrode assembly 6 is further included. The insulating layer 9 is arranged, so that the micro-capacitance ultrasonic sensor can be protected from short circuit when the micro-capacitance ultrasonic sensor is in an unconventional working mode (namely a collapse working mode); and the micro-capacitance ultrasonic sensor can be kept in a normal working mode without collapsing through setting the thickness of the insulating layer 9; in addition, the insulating layer 9 also increases the movable range of the upper film 2, thereby further improving the conversion efficiency of the micro-capacitive ultrasonic sensor.
In the present embodiment, the insulating layer 9 has a through hole 91 penetrating up and down at a position opposite to the lower pad window 23 in correspondence with the lower pad window 23, so that the lower pad 53 can be led out through the lower pad window 23 and the through hole 91. However, the present invention is not limited thereto, and if the insulating layer 9 is reduced in size so that the insulating layer 9 avoids the lower pad window 23, the insulating layer 9 does not need to be provided with the through hole 91.
Therefore, the micro-capacitance ultrasonic sensor of the embodiment not only can realize self-sealing effect, but also improves the tightness; and the dissipation of parasitic capacitance to energy efficiency is avoided, and the conversion efficiency is enhanced.
According to the micro-capacitance ultrasonic sensor provided by the embodiment of the invention, on one hand, the lower sealing coil 3 and the upper sealing coil 4 which are identical in shape and opposite in position are arranged, meanwhile, the lower sealing coil 3 and the upper sealing coil 4 are tightly butted together to form metal bonding, and the accommodating cavity 21 is sealed through double bonding action by combining the anode bonding between the substrate 1 and the upper film 2, so that the sealing performance is improved, the exchange between the accommodating cavity 21 inside the micro-capacitance ultrasonic sensor and the external environment is blocked, and the self-sealing action of the micro-capacitance ultrasonic sensor is realized simply and at low cost; on the other hand, by adopting the insulating substrate 1 and combining the patterned upper electrode 61 and lower electrode 51 and the upper electrode interconnection lead 62 and lower electrode interconnection lead 52 which are distributed in a crossed manner, the dissipation of parasitic capacitance to energy efficiency is avoided, and the conversion efficiency of the micro-capacitance ultrasonic sensor is enhanced.
While the invention has been shown and described with reference to certain embodiments, those skilled in the art will appreciate that: various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims and their equivalents.
Claims (9)
1. A micro-capacitive ultrasonic sensor, comprising: the electrode assembly comprises a substrate, a lower electrode assembly arranged on the upper surface of the substrate, an upper membrane and an upper electrode assembly arranged on the upper surface of the upper membrane, wherein the upper surface of the substrate is also provided with a lower sealing coil which is used for enclosing and encircling the lower electrode assembly, an accommodating cavity for accommodating the lower electrode assembly and an upper sealing coil which is used for enclosing and encircling the accommodating cavity are concavely arranged on the lower surface of the upper membrane, the upper membrane and the substrate are in butt joint sealing with the accommodating cavity at least through the upper sealing coil and the lower sealing coil, the upper sealing coil and the lower sealing coil are annular coils which are connected end to end, and the shapes of the upper sealing coil and the lower sealing coil are matched.
2. The micro-capacitive ultrasonic sensor according to claim 1, wherein a lower pad connected to the lower electrode assembly through a lower pad lead is further provided on the upper surface of the substrate, a lower pad window corresponding to the lower pad is provided on the upper film, the lower pad window is located outside a region surrounded by the upper seal coil in a sealing manner, and the lower pad is exposed through the lower pad window; the upper surface of the upper film is further provided with an upper pad connected with the upper electrode assembly through an upper pad lead.
3. The micro-capacitive ultrasonic sensor of claim 2, wherein the lower pad window corresponds to a shape of the lower pad with a gap between an inner sidewall of the lower pad window and the lower pad.
4. A micro-capacitive ultrasonic transducer according to any one of claims 1 to 3, further comprising an insulating layer sandwiched between the upper membrane and the upper electrode assembly.
5. The micro-capacitive ultrasonic sensor of claim 4, wherein the upper electrode assembly includes an upper electrode interconnection lead and a plurality of upper electrodes connected to each other through the upper electrode interconnection lead, and the lower electrode assembly includes a lower electrode interconnection lead and a plurality of lower electrodes connected to each other through the lower electrode interconnection lead; and in the direction perpendicular to the substrate, the projections of the plurality of upper electrodes and the plurality of lower electrodes are correspondingly overlapped, and the projections of the corresponding upper electrode interconnection leads between the upper electrodes and the corresponding lower electrode interconnection leads between the lower electrodes are mutually intersected.
6. The micro-capacitance ultrasonic sensor according to claim 5, wherein the lower surface of the upper membrane is further concavely provided with interconnection channels penetrating through a plurality of the accommodating cavities; the interconnection channels correspond to the lower electrode interconnection leads, and the depth of the interconnection channels is equal to that of the accommodating cavity.
7. The micro-capacitive ultrasonic sensor of claim 5, wherein projections of the plurality of upper and lower electrodes are within projections of the corresponding receiving cavity in a direction perpendicular to the substrate; and the depth of the accommodating cavity is larger than the thickness of the lower electrode corresponding to the accommodating cavity.
8. The micro-capacitive ultrasonic sensor of claim 1, wherein the upper seal coil and the lower seal coil are both metal coils.
9. The micro-capacitive ultrasonic sensor of claim 1, wherein the substrate is glass, the upper membrane is silicon, and/or the upper membrane and the substrate further seal the receiving cavity by anodic bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610048961.9A CN106998522B (en) | 2016-01-25 | 2016-01-25 | Micro-capacitance ultrasonic sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610048961.9A CN106998522B (en) | 2016-01-25 | 2016-01-25 | Micro-capacitance ultrasonic sensor |
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| Publication Number | Publication Date |
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| CN106998522A CN106998522A (en) | 2017-08-01 |
| CN106998522B true CN106998522B (en) | 2023-07-28 |
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| CN111463175B (en) * | 2020-04-26 | 2022-03-22 | 潍坊歌尔微电子有限公司 | Chip structure and sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| ES2416182T3 (en) * | 2009-03-26 | 2013-07-30 | Norwegian University Of Science And Technology (Ntnu) | CMUT matrix of wave junction with conductive pathways |
| CN102353610A (en) * | 2011-06-10 | 2012-02-15 | 西安交通大学 | Capacitance micro-machining ultrasonic sensor for measuring density and production method thereof |
| CN102520032B (en) * | 2011-12-05 | 2014-08-06 | 西安交通大学 | CMUT (Capacitive Micromachined Ultrasonic Transducer)-based biochemical transducer and manufacturing method thereof |
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