CN106992806B - Double-output S-band relay power amplifier integrated structure - Google Patents
Double-output S-band relay power amplifier integrated structure Download PDFInfo
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- CN106992806B CN106992806B CN201710221690.7A CN201710221690A CN106992806B CN 106992806 B CN106992806 B CN 106992806B CN 201710221690 A CN201710221690 A CN 201710221690A CN 106992806 B CN106992806 B CN 106992806B
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- power
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- microwave
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/14—Relay systems
- H04B7/15—Active relay systems
- H04B7/155—Ground-based stations
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/14—Relay systems
- H04B7/15—Active relay systems
- H04B7/155—Ground-based stations
- H04B7/15528—Control of operation parameters of a relay station to exploit the physical medium
- H04B7/15535—Control of relay amplifier gain
Abstract
The invention discloses a double-output S-band relay power amplifier integrated structure, wherein a splitter divides signals at an input end into two paths and respectively sends the two paths to a 13W microwave amplification link and a 2W microwave amplification link, the 13W microwave amplification link is connected with a output end to output S-band 13W power, the 2W microwave amplification link is connected with a second output end to output S-band 2W power, a DC/DC power supply conversion circuit is connected with a -time power supply through a power interface circuit and converts the voltage of the -time power supply into secondary voltage matched with the 13W microwave amplification link and the 2W microwave amplification link, the 13W microwave amplification link and the 2W microwave amplification link are respectively connected with a DC/DC power supply conversion circuit to supply power independently, a power switch control circuit is respectively connected with two DC/DC power supply conversion circuits corresponding to the 13W microwave amplification link and the 2W microwave amplification link, and the power switch control circuit controls the DC/DC power supply conversion circuit to selectively supply power to the 13W microwave amplification link and/or the 2W amplification link.
Description
Technical Field
The invention designs a microwave radio frequency circuit design technology, in particular to a integrated structure of double-output S-band relay power amplifiers.
Background
The solid-state power amplifier is a key device in electronic systems such as satellite communication, radar, measurement and control, navigation and countermeasure, and has the advantages of stable and reliable performance, convenient maintenance and low energy consumption, and is widely applied to the field of transmission and launch .
The conventional solid-state power amplifier is mainly a single-channel solid-state power amplifier, namely port microwave input and port microwave output, a microwave amplifier device is mainly formed by cascading gallium arsenide field effect transistors, and with the integration requirement of a product, a solid-state product with port input and two port output is also provided.
In general, when a two-port output solid-state discharge product is to implement two-way signal switching, the more common methods are to use the same power supply circuit for two microwave link devices and use commands to switch microwave links to achieve the purpose of signal switching, and the main problem of the method is that sets of DC/DC power supply conversion circuits are used, and the power supply circuit has no backup, thereby reducing the reliability of solid-state discharge.
In addition, methods are also commonly used, wherein a -path microwave link is adopted, a microwave switch is added at a signal output end of the microwave link, and the purpose of signal switching is achieved by switching the microwave switch.
Therefore, how to miniaturize the power amplifier and improve the reliability thereof has become a technical problem to be solved in the industry.
Disclosure of Invention
The invention aims to provide an -integrated structure of a double-output S-band relay power amplifier, so as to achieve the purposes of miniaturization and high reliability.
In order to achieve the purpose, the invention provides a double-output S-band relay power amplifier integrated structure, which comprises an installation layer, a splitter, a DC/DC power conversion circuit, a power switch control circuit, a 13W microwave amplification link, a 2W microwave amplification link and a power interface circuit, wherein the installation layer is provided with an input end, a output end and a second output end;
the splitter divides the signal at the input end into two paths which are respectively sent to a 13W microwave amplification link and a 2W microwave amplification link;
the 13W microwave amplification link is connected with the th output end to output 13W power in an S frequency band, and the 2W microwave amplification link is connected with the second output end to output 2W power in the S frequency band;
the DC/DC power supply conversion circuit is connected with times of power supplies through a power supply interface circuit, and converts the voltage of the times of power supplies into secondary voltage matched with the 13W microwave amplification link and the 2W microwave amplification link, wherein the 13W microwave amplification link and the 2W microwave amplification link are respectively connected with , and the DC/DC power supply conversion circuit supplies power independently;
the power switch control circuit is respectively connected with the two DC/DC power conversion circuits corresponding to the 13W microwave amplification link and the 2W microwave amplification link, and the power switch control circuit controls the DC/DC power conversion circuits to selectively supply power to the 13W microwave amplification link and/or the 2W microwave amplification link.
The optimization schemes further comprise a telemetering signal acquisition interface circuit, wherein the telemetering signal acquisition interface circuit acquires and acquires telemetering feedback signals by connecting the output end and the second output end and sends the telemetering feedback signals to a ground control center.
As an optimization, the power switching circuit includes a dual load relay.
As an optimization, the power switching circuit includes a magnetic latching relay TL 26.
As optimized solutions, the 13W microwave amplification link and the 2W microwave amplification link both include GaAs field effect transistor power amplification devices.
As optimization schemes, the 13W microwave amplification link and the 2W microwave amplification link respectively comprise an isolator, a multistage driving amplification circuit, a power amplifier and a cavity filter which are sequentially connected, wherein the isolator is connected with the shunt, and the cavity filter is connected with the output end or the second output end.
The optimization scheme further comprises a remote control receiving circuit, wherein the power switch control circuit receives a remote control signal sent by a ground control center through the remote control receiving circuit and controls the DC/DC power conversion circuit in response to the remote control signal.
Due to the adoption of the technical scheme, compared with the prior art, the invention has the following advantages and positive effects:
1) according to the double-output S-band relay power amplifier integrated structure, the method is characterized in that two DC/DC power switching circuits are respectively applied to two microwave amplification links, the reliability is improved compared with a common power supply mode, and meanwhile, the volume of solid amplification is reduced by adopting a laminated structure design.
2) The double-output S-band relay power amplifier integrated structure provided by the invention has the characteristics of simple circuit and easiness in implementation, has the universality of , and can be widely applied to electronic systems such as satellite communication, radar, measurement and control, navigation and countermeasure, and the like, by .
Drawings
Fig. 1 is a design block diagram of an -based structure of a two-way output S-band relay power amplifier.
Detailed Description
The invention is further illustrated with reference to the figures and the specific embodiments.
As shown in figure 1, the invention provides a double-output S-band relay power amplifier integrated structure, which comprises an installation layer, a splitter, a DC/DC power conversion circuit, a power switch control circuit, a 13W microwave amplification link, a 2W microwave amplification link and a power interface circuit, wherein the installation layer is provided with an input end, a output end and a second output end;
the splitter divides the signal at the input end into two paths which are respectively sent to a 13W microwave amplification link and a 2W microwave amplification link;
the 13W microwave amplification link is connected with the th output end to output 13W power in an S frequency band, and the 2W microwave amplification link is connected with the second output end to output 2W power in the S frequency band;
the DC/DC power supply conversion circuit is connected with times of power supplies through a power supply interface circuit, and converts the voltage of the times of power supplies into secondary voltage matched with the 13W microwave amplification link and the 2W microwave amplification link, wherein the 13W microwave amplification link and the 2W microwave amplification link are respectively connected with , and the DC/DC power supply conversion circuit supplies power independently;
the power switch control circuit is respectively connected with the two DC/DC power conversion circuits corresponding to the 13W microwave amplification link and the 2W microwave amplification link, and the power switch control circuit controls the DC/DC power conversion circuits to selectively supply power to the 13W microwave amplification link and/or the 2W microwave amplification link.
The optional embodiments further comprise a telemetry signal acquisition interface circuit, wherein the telemetry signal acquisition interface circuit acquires and acquires a telemetry feedback signal by connecting the output end and the second output end and sends the telemetry feedback signal to a ground control center.
The invention realizes the backup of the power supply line by the independent power supply of the two independent power supply conversion circuits, thereby improving the reliability of the system.
As embodiments, the DC/DC power conversion circuit and the power switch control circuit are disposed in a power disposing layer which is separated from the mounting layer, thereby forming a laminated structure which can effectively reduce the mounting area occupied by the system.
As an alternative embodiment of , the power switching circuit includes a dual load relay.
As an alternative embodiment to , the power switching circuit includes a magnetically held relay TL 26.
As alternative embodiments, the 13W microwave amplification chain and the 2W microwave amplification chain both include GaAs field effect transistor power amplification devices.
As optional embodiments, the 13W microwave amplification link and the 2W microwave amplification link both include an isolator, a multi-stage driving amplification circuit, a power amplifier, and a cavity filter, which are connected in sequence, wherein the isolator is connected to the splitter, and the cavity filter is connected to the output terminal or the second output terminal.
optional embodiments, the power switch control circuit further comprises a remote control receiving circuit, and the power switch control circuit receives a remote control signal from a ground control center through the remote control receiving circuit and controls the DC/DC power conversion circuit in response to the remote control signal.
The invention discloses a integrated structure of a double-output S-band relay power amplifier, and provides a design method of a integrated power amplifier which is suitable for small-size and high-integration, and the structure is applied to solid-state power amplifier design, and can effectively reduce the weight and the size of the solid-state power amplifier.
The structure of a dual-output S-band relay power amplifier provided in a preferred embodiment of the present invention comprises an input terminal, a 13W output terminal, a 2W output terminal, a splitter, a DC/DC power conversion circuit, a power switch control circuit, and a microwave amplification circuit, wherein the microwave amplification circuit uses GaAs fet power amplification devices, and includes two microwave amplification links, namely, a 13W microwave amplification link and a 2W microwave amplification link, the splitter divides signals at the input terminal into two paths, and sends the two paths to the 13W microwave amplification link and the 2W microwave amplification link, the DC/DC power conversion circuit converts times of power into a secondary power source matching the voltage required by the microwave amplification circuit, the power control circuit uses a magnetic retention relay TL26, which can control a secondary power switch to supply power to the 13W microwave amplification link and/or the 2W microwave amplification link, the 13W microwave amplification link is connected to the 13W output terminal, the 2W microwave amplification link is connected to the 2W output terminal, the two microwave amplification links can be independently powered, the GaAs field effect power devices in the power amplification circuit are used for reducing the GaAs chip working temperature of the GaAs chip according to meet the requirements of the dual-level of the load relay 26.
In conclusion, the invention has the characteristics of simple circuit and easy realization, has -specified universality, and can be widely applied to electronic systems such as satellite communication, radar, measurement and control, navigation, countermeasure and the like in .
The above disclosure is only for the specific embodiment of the present invention, which is used for the purpose of more clearly illustrating the present invention, and is not to be construed as limiting the present invention, and any variations that can be made by those skilled in the art are within the scope of protection.
Claims (7)
1. The double-output S-band relay power amplifier integrated structure is characterized by comprising an installation layer, a splitter, a DC/DC power conversion circuit, a power switch control circuit, a 13W microwave amplification link, a 2W microwave amplification link and a power interface circuit, wherein the installation layer is provided with an input end, a th output end and a second output end;
the splitter divides the signal at the input end into two paths which are respectively sent to a 13W microwave amplification link and a 2W microwave amplification link;
the 13W microwave amplification link is connected with the th output end to output 13W power in an S frequency band, and the 2W microwave amplification link is connected with the second output end to output 2W power in the S frequency band;
the DC/DC power supply conversion circuit is connected with times of power supplies through a power supply interface circuit, and converts the voltage of the times of power supplies into secondary voltage matched with the 13W microwave amplification link and the 2W microwave amplification link, wherein the 13W microwave amplification link and the 2W microwave amplification link are respectively connected with , and the DC/DC power supply conversion circuit supplies power independently;
the power switch control circuit is respectively connected with the two DC/DC power conversion circuits corresponding to the 13W microwave amplification link and the 2W microwave amplification link, and the power switch control circuit controls the DC/DC power conversion circuits to selectively supply power to the 13W microwave amplification link and/or the 2W microwave amplification link.
2. The dual-output S-band repeater structure of claim 1, further comprising a telemetry signal acquisition interface circuit, wherein the telemetry signal acquisition interface circuit acquires a telemetry feedback signal by connecting the output terminal and the second output terminal and transmits the telemetry feedback signal to a ground control center.
3. The dual-output S-band repeater implementation according to claim 1, wherein the power switch control circuit comprises a dual-load relay.
4. The dual-output S-band relay power amplifier integrated structure of claim 1 or 3, wherein the power switch control circuit comprises a magnetic latching relay TL 26.
5. The two-way output S-band relay power amplifier body structure of claim 1, wherein the 13W microwave amplification link and the 2W microwave amplification link both comprise GaAs field effect transistor power amplifier devices.
6. The integrated structure of the dual-output S-band relay power amplifier of claim 1, wherein the 13W microwave amplifying chain and the 2W microwave amplifying chain comprise an isolator, a multi-stage driving amplifying circuit, a power amplifier and a cavity filter, which are connected in sequence, wherein the isolator is connected with the splitter, and the cavity filter is connected with the output end or the second output end.
7. The dual-output S-band repeater structure of claim 1, further comprising a remote control receiver circuit, wherein the power switch control circuit receives a remote control signal from a ground control center via the remote control receiver circuit, and controls the DC/DC power conversion circuit in response to the remote control signal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710221690.7A CN106992806B (en) | 2017-04-06 | 2017-04-06 | Double-output S-band relay power amplifier integrated structure |
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| CN201710221690.7A CN106992806B (en) | 2017-04-06 | 2017-04-06 | Double-output S-band relay power amplifier integrated structure |
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| CN106992806A CN106992806A (en) | 2017-07-28 |
| CN106992806B true CN106992806B (en) | 2020-01-31 |
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| CN111010224B (en) * | 2019-12-26 | 2021-02-02 | 中国科学院国家空间科学中心 | S-band satellite communication terminal for offshore mobile platform |
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| CN2419725Y (en) * | 2000-04-18 | 2001-02-14 | 金华市三为电力器材有限公司 | Low voltage reactance compensator |
| CN101540616A (en) * | 2009-05-06 | 2009-09-23 | 中国科学院光电研究院 | Satellite-borne data transmission transmitter using microwave direct modulation technique |
| CN102355207A (en) * | 2011-09-29 | 2012-02-15 | 中国电子科技集团公司第五十四研究所 | Ka frequency-band solid-state power amplifier |
| CN103391058A (en) * | 2013-07-25 | 2013-11-13 | 上海航天测控通信研究所 | Miniature solid-state power amplification device applied to deep-space exploration |
| CN103532503A (en) * | 2013-09-18 | 2014-01-22 | 清华大学 | Power amplifier |
| CN104579201A (en) * | 2014-12-29 | 2015-04-29 | 宁波音王电声股份有限公司 | Power amplifier system |
| JP2015109646A (en) * | 2013-12-03 | 2015-06-11 | フリースケール セミコンダクター インコーポレイテッド | Multiple-state, switch-mode power amplifier systems, and methods of their operation |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6206698B2 (en) * | 2012-12-19 | 2017-10-04 | 株式会社村田製作所 | Power amplifier |
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- 2017-04-06 CN CN201710221690.7A patent/CN106992806B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2419725Y (en) * | 2000-04-18 | 2001-02-14 | 金华市三为电力器材有限公司 | Low voltage reactance compensator |
| CN101540616A (en) * | 2009-05-06 | 2009-09-23 | 中国科学院光电研究院 | Satellite-borne data transmission transmitter using microwave direct modulation technique |
| CN102355207A (en) * | 2011-09-29 | 2012-02-15 | 中国电子科技集团公司第五十四研究所 | Ka frequency-band solid-state power amplifier |
| CN103391058A (en) * | 2013-07-25 | 2013-11-13 | 上海航天测控通信研究所 | Miniature solid-state power amplification device applied to deep-space exploration |
| CN103532503A (en) * | 2013-09-18 | 2014-01-22 | 清华大学 | Power amplifier |
| JP2015109646A (en) * | 2013-12-03 | 2015-06-11 | フリースケール セミコンダクター インコーポレイテッド | Multiple-state, switch-mode power amplifier systems, and methods of their operation |
| CN104579201A (en) * | 2014-12-29 | 2015-04-29 | 宁波音王电声股份有限公司 | Power amplifier system |
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