CN106992673A - A kind of low-power consumption short-circuit protection circuit - Google Patents
A kind of low-power consumption short-circuit protection circuit Download PDFInfo
- Publication number
- CN106992673A CN106992673A CN201710299714.0A CN201710299714A CN106992673A CN 106992673 A CN106992673 A CN 106992673A CN 201710299714 A CN201710299714 A CN 201710299714A CN 106992673 A CN106992673 A CN 106992673A
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- China
- Prior art keywords
- voltage
- resistance
- pwm
- protection circuit
- mosfet
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention discloses a kind of low-power consumption short-circuit protection circuit, including power conversion section A and protection circuit part B；Wherein power conversion section includes pulse width modulator PWM, metal-oxide half field effect transistor MOSFET and power transformer T1；Protection circuit B includes current transformer T2, rectifying tube V4, filter capacitor C2, triode V6, voltage-stabiliser tube V5 and the 5th resistance R5, the 7th resistance R7；T2 primary is connected with T1 secondary output end, T2 secondary Same Name of Ends connection rectifying tube V4 positive pole, V4 negative pole connects filter capacitor C2 positive pole and voltage-stabiliser tube V5 negative pole respectively, C2 negative pole connects T2 secondary different name end, the base stage that V5 positive pole passes through the 6th resistance R6 connecting triodes V6, V6 colelctor electrode is connected to PWM reference voltage end i.e. vref ports, and V6 emitting stage is connected to PWM voltage sample end i.e. vfb ports；5th resistance R5 is connected in parallel on T2 secondary, is used as T2 load resistance；7th resistance R7 is connected between V6 base stage and emitting stage.
Description
Technical field
The invention belongs to electric and electronic technical field, a kind of low-power consumption short-circuit protection circuit is related generally to.
Background technology
DC-DC converter plays the role that a busbar voltage is transformed to secondary voltage, is inside spacecraft
Energy user and the interface unit of payload energy provider, its Performance And Reliability are directly connected to the safety of spacecraft
Operation.DC-DC converter, as power processing unit, is the weak link of system reliability design, wherein, excessively stream and short
Road is two kinds of common anomalous operating modes.When DC-DC converter is operated in excessively stream or short-circuit condition, if can not be timely
Correct processing, not only results in DC-DC converter damaged themselves, goes back the prime or late-class circuit of entail dangers to converter.
It is big, over-current protection point not fine cut scarce to there is short-circuit dissipation in the DC-DC converter used both at home and abroad at present
Point, (power output is different, short circuit between 1.2W~30W for the short-circuit dissipation of the thick film converter of Interpiont and IR companies
Power consumption is variant), the short-circuit dissipation of home products is more slightly lower than external product, but above 1W.Therefore, to reliability requirement
In high aerospace system, using the DC-DC converter with high accuracy, low-power consumption excessively stream/short-circuit protection circuit, favorably
In raising system reliability.
The content of the invention
In view of this, the invention provides a kind of low-power consumption short-circuit protection circuit, possess while short-circuit protection is realized
The characteristics of low-power consumption.
In order to achieve the above object, the technical scheme is that：A kind of low-power consumption short-circuit protection circuit, including power turn
Change part A and protection circuit part B；Wherein power conversion section includes pulse width modulator PWM, metal-oxide half field effect transistor
MOSFET and power transformer T1.
Pulse width modulator PWM reference voltage end vref receives the reference voltage of input, voltage sample end vfb and receives input
Voltage sample value, the voltage sample value of input is carried out after pulsewidth modulation according to reference voltage, broad-adjustable square wave is exported
Voltage is to MOSFET.
Metal-oxide half field effect transistor MOSFET is under the driving of square-wave voltage, on off state, wherein in square-wave voltage
High level when state to open, in the low level of square-wave voltage, state is closes.
Power transformer T1 receives output voltages of the MOSFET under open state, and power and voltage are carried out to the output voltage
Conversion, obtain final output voltage.
Protection circuit B includes current transformer T2, rectifying tube V4, filter capacitor C2, triode V6, voltage-stabiliser tube V5 and the
Five resistance R5, the 7th resistance R7；Wherein T2 primary is connected with T1 secondary output end, and T2 secondary Same Name of Ends is designated as pp
End, different name end are pm ends, and pp ends connection rectifying tube V4 anode, V4 negative electrode connects filter capacitor C2 positive pole and voltage stabilizing respectively
Pipe V5 negative electrode, C2 negative pole connection pm ends, V5 anode passes through the 6th resistance R6 connecting triodes V6 base stage, V6 current collection
Pole is connected to PWM reference voltage end i.e. vref ports, and V6 emitting stage and PWM vfb ports, C2 negative pole and pm ends are equal
It is connected；5th resistance R5 is connected in parallel on T2 secondary, is used as T2 load resistance；7th resistance R7 is connected to V6 base stage and transmitting
Between level.
Further, voltage-stabiliser tube V5 is avalanche breakdown pipe, and its temperature coefficient is positive temperature coefficient.
Further, PWM is UC3845, UC3825, UC3525 or UC1846.
Further, the 6th resistance R6 is also included in protection circuit B, the 6th resistance R6 is being connected to V6 base stage and V5 just
Between pole, current-limiting resistance is used as.
Further, pulse width modulator PWM, metal-oxide half field effect transistor MOSFET and power transformer T1 connection are closed
It is to be：Power port VCC and setting voltage port VC ends are connected to external power source by first resistor R1 again after being joined directly together in PWM
VIN, PWM output port by the source class of second resistance R2 connections MOSFET grid, MOSFET with connecting power supply VING,
The 4th resistance R4 is connected between MOSFET grid and source class, MOSFET drain connects T1 primary different name end, and T1 primary is same
Name termination external power source VIN；T1 secondary Same Name of Ends connects the first diode V2 anode, the first diode V2 negative electrode connection
Second diode V3 negative electrode, the second diode V3 negative electrode is connected to filter capacitor C1 positive pole, the 3rd electricity by inductance L1
Resistance R3 is in parallel with C1, C1 negative poles connection diode V3 negative electrode and the secondary different name end extraction pin B- for drawing pin B+, T1；
Wherein B+ and B- as T1 secondary output end and T2 primary series.
Beneficial effect：
1st, when pulse width modulator pwm circuit of the present invention exports the turn-on and turn-off of broad-adjustable square wave driving triode
Between, carry out realizing output voltage stabilizing after isolation and power conversion by transformer.Current transformer is adopted to output pulse current
Sample, and current signal is transformed into voltage signal control triode, triode controls pulse width modulator after voltage signal is amplified
Voltage sample end vfb so that pulse width modulator exports pulse narrowing, converter output voltage declines, and power consumption diminishes.Tradition
Being carried out triode V6 in short-circuit protection, the present invention in circuit in the form of emitter follower, by its periphery circuit design, is made
It is in plus and blowup state.Set by R6 resistances, adjust V6 multiplication factor, multiplication factor is bigger, and short-circuit dissipation is got over
It is small, experiments verify that, below 0.9W short-circuit dissipation can be reached.
2nd, when short circuit elimination, the automatic resume speed of circuit of the present invention is very fast, and traditional circuit uses the form of emitter follower,
Using larger RC values, cause short-circuit condition release after recovery time it is longer, the present invention in triode V6 be in plus and blowup
State, can be achieved, after short circuit is eliminated, circuit can return to normal operating conditions quickly using less RC values.
3rd, voltage-stabiliser tube V5 is temperature-compensating voltage-stabiliser tube in the present invention, should select the avalanche breakdown pipe more than 6V, its temperature system
Number should be positive temperature coefficient, the temperature drift to compensate rectifying tube V4 and V6.So that the drift of this circuit temperature is small, protection
Accurately.
4th, the simple cost of circuit of the present invention is low.
5th, current transformer isolation sampling, it is adaptable to which PWM is placed in two kinds of circuits of primary and secondary；
6th, suitable for the various chips based on PWM such as UC3845 series, UC3825, UC3525 and UC1846.
Brief description of the drawings
Fig. 1 is composition schematic diagram of the invention.
Embodiment
The present invention will now be described in detail with reference to the accompanying drawings and examples.
A kind of low-power consumption short-circuit protection circuit, including power conversion section A and protection circuit part B；Wherein power is changed
Part includes pulse width modulator PWM, metal-oxide half field effect transistor MOSFET and power transformer T1；Wherein PWM exports square wave
Drive MOSFET conductings so that MOSFET is on off state, carry out the conversion of power and voltage by and by T1, obtain output electricity
Pressure.
Pulse width modulator PWM reference voltage end vref receives the reference voltage of input, voltage sample end vfb and receives input
Voltage sample value, the voltage sample value of input is carried out after pulsewidth modulation according to reference voltage, broad-adjustable square wave is exported
Voltage is to MOSFET.
Metal-oxide half field effect transistor MOSFET is under the driving of square-wave voltage, on off state, wherein in square-wave voltage
High level when state to open, in the low level of square-wave voltage, state is closes.
Power transformer T1 receives output voltages of the MOSFET under open state, and power and voltage are carried out to the output voltage
Conversion, obtain final output voltage.
Protection circuit B includes current transformer T2, rectifying tube V4, filter capacitor C2, triode V6, voltage-stabiliser tube V5 and the
Five resistance R5, the 6th resistance R6, the 7th resistance R7；Wherein T2 primary is connected with T1 secondary output end, and T2's is secondary of the same name
It is pm ends that end, which is designated as pp ends, different name end, and pp ends connection rectifying tube V4 anode, V4 negative pole is connecting filter capacitor C2 just respectively
Pole and voltage-stabiliser tube V5 negative electrode, C2 negative pole connection pm ends, V5 anode by the 6th resistance R6 connecting triodes V6 base stage,
V6 colelctor electrode is connected to PWM reference voltage end i.e. vref ports, V6 emitting stage and PWM vfb ports, C2 negative pole with
And pm ends are connected；5th resistance R5 is connected in parallel on T2 secondary, is used as T2 load resistance；6th resistance is connected to V6 base stage
Between V5 positive pole, current-limiting resistance is used as；7th resistance R7 is connected between V6 base stage and emitting stage.
In the present embodiment, voltage-stabiliser tube V5 is avalanche breakdown pipe, and its temperature coefficient is positive temperature coefficient.
In the present embodiment, PWM is UC3845, UC3825, UC3525 or UC1846.
In the present embodiment, pulse width modulator PWM, metal-oxide half field effect transistor MOSFET and power transformer T1 connection
Relation is：Power port VCC and setting voltage port VC ends are connected to external electrical by first resistor R1 again after being joined directly together in PWM
Source VIN, PWM output port by the source class of second resistance R2 connections MOSFET grid, MOSFET with connecting power supply VING,
The 4th resistance R4 is connected between MOSFET grid and source class, MOSFET drain connects T1 primary different name end, and T1 primary is same
Name termination external power source VIN；T1 secondary Same Name of Ends connects the first diode V2 anode, the first diode V2 negative electrode connection
Second diode V3 negative electrode, the second diode V3 negative electrode is connected to filter capacitor C1 positive pole, the 3rd electricity by inductance L1
Resistance R3 is in parallel with C1, C1 negative poles connection diode V3 negative electrode and the secondary different name end extraction pin B- for drawing pin B+, T1；
Wherein B+ and B- is respectively as T1 secondary output end and T2 primary series.
The function to circuit of the present invention is described below：
With reference to Fig. 1, in power conversion section (A)：When pulse width modulator works, square wave is exported, driving MOSFET conductings make
Metal-oxide-semiconductor works on off state.Transformer completes the conversion of voltage and power, defeated when load changes with input voltage
Going out voltage can also change.Now sample circuit feeds back to the change of output voltage PWM reverse input end, and PWM can root
Change output pulse width, and then regulated output voltage according to the change of output voltage.
Current transformer T2 primary and power transformer T1 secondary tandem, the secondary production when switching tube MOSFET is turned on
Raw induced voltage, induced voltage is by diode V4 rectifications, after driving triode V6, triode to amplify after electric capacity C2 filtering
Reverse input end Vfb of current signal when feeding back to PWM, raise the voltage of reverse input end, PWM output pulse becomes
It is narrow, so that converter output voltage reduces power reduction.
With reference to Fig. 1, in protection circuit (B), resistance R5 is the load resistance of current transformer, and R6 is the limit of transistor base
Leakage resistance, voltage-stabiliser tube V5 is temperature-compensating voltage-stabiliser tube, should select the avalanche breakdown pipe more than 6V, and its temperature coefficient should be positive temperature
Coefficient, the temperature drift to compensate rectifying tube V4 and V6.
Triode V6 in the form of emitter follower, the present invention is used by its periphery circuit design, to make in traditional circuit
It is in plus and blowup state.Set by R6 resistances, adjust V6 multiplication factor, multiplication factor is bigger, and short-circuit dissipation is got over
It is small, experiments verify that, below 0.9W short-circuit dissipation can be reached.
To sum up, presently preferred embodiments of the present invention is these are only, is not intended to limit the scope of the present invention.It is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements made etc. should be included in the protection of the present invention
Within the scope of.
Claims (5)
1. a kind of low-power consumption short-circuit protection circuit, it is characterised in that including power conversion section A and protection circuit part B；Wherein
Power conversion section includes pulse width modulator PWM, metal-oxide half field effect transistor MOSFET and power transformer T1；
The reference voltage end vref of the pulse width modulator PWM receives the reference voltage of input, voltage sample end vfb and receives input
Voltage sample value, the voltage sample value of input is carried out after pulsewidth modulation according to reference voltage, broad-adjustable square wave is exported
Voltage is to MOSFET；
The metal-oxide half field effect transistor MOSFET is under the driving of the square-wave voltage, on off state, wherein in square wave
State is opens during the high level of voltage, and in the low level of square-wave voltage, state is pass；
The power transformer T1 receives output voltages of the MOSFET under open state, and power and voltage are carried out to the output voltage
Conversion, obtain final output voltage；
The protection circuit B includes current transformer T2, rectifying tube V4, filter capacitor C2, triode V6, voltage-stabiliser tube V5 and the
Five resistance R5, the 7th resistance R7；Wherein T2 primary is connected with T1 secondary output end, and T2 secondary Same Name of Ends is designated as pp
End, different name end are pm ends, and pp ends connection rectifying tube V4 anode, V4 negative electrode connects filter capacitor C2 positive pole and voltage stabilizing respectively
Pipe V5 negative electrode, C2 negative pole connection pm ends, V5 anode passes through the 6th resistance R6 connecting triodes V6 base stage, V6 current collection
Pole is connected to PWM reference voltage end i.e. vref ports, and V6 emitting stage and PWM vfb ports, C2 negative pole and pm ends are equal
It is connected；5th resistance R5 is connected in parallel on T2 secondary, is used as T2 load resistance；7th resistance R7 is connected to V6 base stage and transmitting
Between level.
2. low-power consumption short-circuit protection circuit as claimed in claim 1, it is characterised in that the voltage-stabiliser tube V5 is avalanche breakdown
Pipe, its temperature coefficient is positive temperature coefficient.
3. low-power consumption short-circuit protection circuit as claimed in claim 1, it is characterised in that the PWM be UC3845, UC3825,
UC3525 or UC1846.
4. low-power consumption short-circuit protection circuit as described in claim 1 or 2, it is characterised in that also wrapped in the protection circuit B
The 6th resistance R6 is included, the 6th resistance R6 is connected between V6 base stage and V5 positive pole, is used as current-limiting resistance.
5. low-power consumption short-circuit protection circuit as described in claim 1 or 2, it is characterised in that the pulse width modulator PWM,
Metal-oxide half field effect transistor MOSFET and power transformer T1 annexation is：Power port VCC and setting voltage in PWM
Port VC ends pass through second resistance R2 by the first resistor R1 output ports for being connected to external power source VIN, PWM again after being joined directly together
MOSFET grid, MOSFET source class with connecting power supply VING are connected, the 4th electricity is connected between MOSFET grid and source class
R4 is hindered, MOSFET drain connects T1 primary different name end, T1 primary termination external power source VIN of the same name；T1 secondary Same Name of Ends
The first diode V2 anode is connected, the first diode V2 negative electrode connects the second diode V3 negative electrode, the second diode V3
Negative electrode filter capacitor C1 positive pole is connected to by inductance L1,3rd resistor R3 is in parallel with C1, C1 negative poles connection diode V3
Negative electrode and draw pin B+, T1 secondary different name end and draw pin B-；Wherein B+ and B- as T1 secondary output end
With T2 primary series.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710299714.0A CN106992673A (en) | 2017-05-02 | 2017-05-02 | A kind of low-power consumption short-circuit protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710299714.0A CN106992673A (en) | 2017-05-02 | 2017-05-02 | A kind of low-power consumption short-circuit protection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106992673A true CN106992673A (en) | 2017-07-28 |
Family
ID=59418009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710299714.0A Pending CN106992673A (en) | 2017-05-02 | 2017-05-02 | A kind of low-power consumption short-circuit protection circuit |
Country Status (1)
| Country | Link |
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| CN (1) | CN106992673A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101562929A (en) * | 2009-05-15 | 2009-10-21 | 广州金升阳科技有限公司 | Isolated driving power for high-power light emitting diode |
| CN201388158Y (en) * | 2009-02-26 | 2010-01-20 | 佛山市顺德区瑞德电子实业有限公司 | Flyback power supply for semiconductor refrigeration with short-circuit protection |
| US20120074868A1 (en) * | 2010-09-29 | 2012-03-29 | Yang-Tai Tseng | Driving circuit for driving light emitting diodes and short circuit protection circuit applied to a driving circuit for driving light emitting diodes |
-
2017
- 2017-05-02 CN CN201710299714.0A patent/CN106992673A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201388158Y (en) * | 2009-02-26 | 2010-01-20 | 佛山市顺德区瑞德电子实业有限公司 | Flyback power supply for semiconductor refrigeration with short-circuit protection |
| CN101562929A (en) * | 2009-05-15 | 2009-10-21 | 广州金升阳科技有限公司 | Isolated driving power for high-power light emitting diode |
| US20120074868A1 (en) * | 2010-09-29 | 2012-03-29 | Yang-Tai Tseng | Driving circuit for driving light emitting diodes and short circuit protection circuit applied to a driving circuit for driving light emitting diodes |
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Application publication date: 20170728 |