CN106992165B - Semiconductor substrate and preparation method thereof - Google Patents
Semiconductor substrate and preparation method thereof Download PDFInfo
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- CN106992165B CN106992165B CN201610035986.5A CN201610035986A CN106992165B CN 106992165 B CN106992165 B CN 106992165B CN 201610035986 A CN201610035986 A CN 201610035986A CN 106992165 B CN106992165 B CN 106992165B
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- 239000000758 substrate Substances 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000003989 dielectric material Substances 0.000 claims abstract description 92
- 239000004020 conductor Substances 0.000 claims abstract description 87
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims description 29
- 150000001875 compounds Chemical class 0.000 claims description 20
- 238000005266 casting Methods 0.000 claims description 19
- 229920005989 resin Polymers 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- 239000004593 Epoxy Substances 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 229920001296 polysiloxane Polymers 0.000 claims description 7
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 161
- 238000010586 diagram Methods 0.000 description 13
- 239000011241 protective layer Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- -1 phenolic aldehyde Chemical class 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
A kind of semiconductor substrate and preparation method thereof.Semiconductor substrate structure includes a metal support plate, a dielectric materials layer, a conductor layer No.1, one second conductor layer and a conductive posts.Conductor layer No.1 is set to a surface of metal support plate.Dielectric materials layer is set to a surface of conductor layer No.1.Conductive posts are set in dielectric materials layer and are set between conductor layer No.1 and the second conductor layer, have an at least conductive column.Conductor layer No.1 and the second conductor layer are electrically connected by an at least conductive column.
Description
Technical field
The present invention is about a kind of substrate and preparation method thereof.In more detail, the present invention about a kind of semiconductor substrate and
Its production method.
Background technique
In the electronic product of a new generation, user not only pursue it is more light and short, more require it with multi-functional and
High-performance.Therefore, electronics manufacturer must be in integrated circuit (integrated circuit；IC limited region)
In, more electronic components are accommodated to reach the requirement of high density and micromation.Accordingly, electronics manufacturer develops differently
Novel encapsulated technology.For example, one is by printed circuit board (printed circuit board；) and soft board PCB
(flex board) is with pressing mode is combined and forms the encapsulation technology of a Rigid Flex；It is another then be respectively will print
After printed circuit board and soft board complete, then with juncture is combined and forms the encapsulation technology of a soft or hard joint plate.
Since the processing procedure of Rigid Flex is miscellaneous and conducting wire layer number is more, cause its route production complexity with
And all quite high defect of thickness.Although soft or hard joint plate improves the defect of Rigid Flex, and reduces route production
Complexity and thickness；But engagement is carried out or by different since soft or hard joint plate needs to melt tin (hot bar) welding with hot pressing
Side's property conducting resinl (anisotropic conductive film；ACF it) is engaged, while being limited to the shadow of the rigidity of material
It rings, and then it is caused to make the rather low defect of yield.
In addition, in Rigid Flex or the bottom of soft or hard joint plate, it is also necessary to the gold-plated processing of suitable large area is carried out,
Has the function of the purpose for being grounded and radiating to reach Rigid Flex or soft or hard joint plate；Meanwhile Rigid Flex or soft
When hard joint plate and main circuit board are assembled, Rigid Flex or soft or hard joint plate must be by conductive glue slice (EMI film)
It is bonded on main circuit board.Accordingly, aforementioned processing process and material all greatly improved using Rigid Flex or soft or hard engagement
Cost of manufacture of the plate as encapsulation technology.
In view of this, how to provide a kind of have rigidity and thermal diffusivity and meets fine and closely woven route spacing, high density, slim
Change, cost effective and highly conductive characteristic semiconductor substrate structure, is industry urgent problem to be solved.
Summary of the invention
A purpose of the present invention is that providing a kind of semiconductor substrate structure.
The semiconductor substrate structure includes a metal support plate, a dielectric materials layer, a conductor layer No.1, one second conductor layer
And conductive posts.The conductor layer No.1 is set to a surface of the metal support plate.The dielectric materials layer be set to this first
One surface of conductor layer.The conductive posts are set in the dielectric materials layer and are set to the conductor layer No.1 and this second is led
Between line layer, there is an at least conductive column.The conductor layer No.1 and second conductor layer are then by an at least conductive column
It is electrically connected.
Another object of the present invention is to provide a kind of production methods of semiconductor substrate structure.
The production method includes the following steps: to provide a metal support plate；A conductor layer No.1 is formed in the metal support plate
One surface；A conductive posts are formed in a surface of the conductor layer No.1；A dielectric materials layer is formed, so that it is coated this and first leads
Line layer and the conductive posts, and expose one end of the conductive posts；And one second conductor layer is formed in the conduction of exposing
One end of column layer and a surface of the dielectric materials layer, make the conductor layer No.1 and second conductor layer by the conductive posts
It is electrically connected.
In conclusion board structure of the semiconductor substrate structure of the invention and preparation method thereof using metal support plate production
To replace existing Rigid Flex or soft or hard joint plate；Meanwhile conductor layer, conductive posts are formed with more easy production process
With dielectric materials layer.Accordingly, semiconductor substrate structure and preparation method thereof of the invention may achieve the requirement of substrate slimming, together
When meet highly conductive characteristic, and have both rigidity and thermal diffusivity.In this way, which process time of board structure and substantially will can be shortened
Reduce cost of manufacture.
After referring to the drawings and the subsequently described embodiments, technical field those of ordinary skill can understand this hair
Bright other purposes, advantage and technological means and state sample implementation of the invention.
Detailed description of the invention
Fig. 1 is the schematic diagram of the semiconductor substrate structure of the first embodiment of the present invention.
Fig. 2 is the schematic diagram of the semiconductor substrate structure of the second embodiment of the present invention.
Fig. 3 is the schematic diagram of the semiconductor substrate structure of the third embodiment of the present invention.
Fig. 4 is the schematic diagram of the semiconductor substrate structure of the fourth embodiment of the present invention.
Fig. 5 is the schematic diagram of the semiconductor substrate structure of the fifth embodiment of the present invention.
Fig. 6 is the flow chart of the production method of the semiconductor substrate structure of the sixth embodiment of the present invention.
Fig. 7 A to Fig. 7 F is the production schematic diagram of the semiconductor substrate structure of the sixth embodiment of the present invention.
Fig. 8 is the flow chart of the production method of the semiconductor substrate structure of the seventh embodiment of the present invention.
Fig. 9 A to Fig. 9 B is the production schematic diagram of the semiconductor substrate structure of the seventh embodiment of the present invention.
Figure 10 is the flow chart of the production method of the semiconductor substrate structure of the eighth embodiment of the present invention.
Figure 11 A to Figure 11 D is the production schematic diagram of the semiconductor substrate structure of the eighth embodiment of the present invention.
Figure 12 is the flow chart to form dielectric materials layer.
[description of symbols]
1,2,3,4,5 board structure
101 metal support plates
103 conductor layer No.1s
105 conductive posts
107 dielectric materials layers
109 second conductor layers
111,303 insulating protective layer
201,501 first conductive posts
203,503 first dielectric materials layer
205,505 second dielectric materials layer
207 second conductive posts
301,511 privates layer
401 third dielectric materials layers
403 third conductive posts
507 flexible circuit boards
509A, 509B, 509C conductive column
1011、1031、1091、2031、2051、3011、5031、5051
5071 flexible circuit board conductor layers.
Specific embodiment
It will explain the content of present invention by embodiment below, the embodiment of the present invention is not intended to limit the invention must be
Any specific environment, application or particular form as described embodiments can be implemented.Explanation accordingly, with respect to embodiment is only
The purpose of the present invention is illustrated, rather than to limit the present invention.It must illustrate, it is indirect with the present invention in following embodiment and schema
Relevant element has been omitted from and is not painted；And the size relationship of each interelement is only to ask to be readily understood by schema, it is non-to limit
Actual ratio.
The first embodiment of the present invention is as shown in Figure 1, be the schematic diagram of a board structure 1.Board structure 1 includes a metal
Support plate 101, a conductor layer No.1 103, a conductive posts 105, a dielectric materials layer 107, one second conductor layer 109 and one are exhausted
Edge protective layer 111.Conductive posts 105 have several conductive columns.Dielectric materials layer 107 is a casting die compound (Molding
Compound) layer, with phenolic group resin (Novolac-based Resin), epoxy (Epoxy-based
Resin), silicone (Silicone-based Resin) or other casting die compounds appropriate, but not limited to this.At this
In embodiment, conductive posts 105 have two conductive columns.However, in other embodiments, different according to board structure 1 are used
Way and type, conductive posts 105 can be respectively provided with any number of conductive column, not with the number of conductive column described in the present embodiment
Amount is limited.
Metal support plate 101 has a surface 1011.Conductor layer No.1 103 has a surface 1031.Conductor layer No.1 103 is set
It is placed in the surface 1011 of metal support plate 101.Dielectric materials layer 107 is set to the surface 1031 of conductor layer No.1 103.Second conducting wire
Layer 109 is set on dielectric materials layer 107；Meanwhile second conductor layer 109 partly cover dielectric materials layer 107.Conductive posts
105 are set in dielectric materials layer 107, and are set between conductor layer No.1 103 and the second conductor layer 109；Meanwhile it is conductive
Column layer 105 is electrically connected conductor layer No.1 103 and the second conductor layer 109.Insulating protective layer 111 is set to dielectric materials layer
107 and second on conductor layer 109；Meanwhile insulating protective layer 111 partly covers dielectric materials layer 107 and the second conducting wire
Layer 109.
The second embodiment of the present invention is as shown in Fig. 2, be the schematic diagram of a board structure 2.One structure class of board structure 2
It is similar to the structure of board structure 1 described in the first embodiment of the present invention, difference is board structure 2 with one first conductive column
Layer 201 replaces conductive posts 105, and replaces dielectric materials layer 107 with one first dielectric materials layer 203；Meanwhile board structure 2
Further include one second dielectric materials layer 205 and one second conductive posts 207.First conductive posts 201 have several conductive columns.
Similarly, the second conductive posts 207 also have several conductive columns.
First dielectric materials layer 203 or the second dielectric materials layer 205 are a conductive film, with phenolic aldehyde Ji Shu
Rouge, epoxy, silicone or other casting die compounds appropriate, but not limited to this.In the present embodiment, it first leads
Electric column layer 201 has two conductive columns；There are three conductive columns for second conductive posts 207 tool.However, in other embodiments, according to
According to the different purposes and type of board structure 2, the first conductive posts 201 and the second conductive posts 207 can be respectively provided with arbitrarily
The conductive column of number is not limited with the quantity of conductive column described in the present embodiment.
First dielectric materials layer 203 has a surface 2031.Second conductor layer 109 has a surface 1091.Second dielectric
Material layer 205 is set to the surface 1091 of the second conductor layer 109 and the surface 2031 of the first dielectric materials layer 203.Second leads
Electric column layer 207 is set in the second dielectric materials layer 205, and is partially electrically connected the second conductor layer 109.In detail,
The conductive column of two conductive posts 207 has a first end and the second end relative to first end, the second conductive posts 207
The first end of conductive column is electrically connected the second conductor layer 109；The second end of the conductive column of second conductive posts 207 is exposed to second
Outside dielectric materials layer 205.
The third embodiment of the present invention is as shown in figure 3, be the schematic diagram of a board structure 3.One structure class of board structure 3
It is similar to the structure of board structure 2 described in the second embodiment of the present invention, difference is that board structure 3 further includes a third and leads
Line layer 301 and an insulating protective layer 303.
Second dielectric materials layer 205 has a surface 2051.Conductor layer No.1 103 is set to the surface of metal support plate 101
1011.Privates layer 301 is set to the surface 2051 of the second dielectric materials layer 205；Meanwhile privates layer 301 is partly
Cover the second dielectric materials layer 205.Second conductive posts 207 are set in the second dielectric materials layer 205, and are set to second and are led
Between line layer 109 and privates layer 301；Meanwhile second conductive posts 207 be electrically connected the second conductor layer 109 and the
Three wires layer 301.Insulating protective layer 303 is set on the second dielectric materials layer 205 and privates layer 301；Meanwhile it insulating
Protective layer 303 partly covers the second dielectric materials layer 205 and privates layer 301.
The fourth embodiment of the present invention is as shown in figure 4, be the schematic diagram of a board structure 4.One structure class of board structure 4
It is similar to the structure of board structure 3 described in the third embodiment of the present invention, difference is that board structure 4 further includes third Jie
Material layer 401 and a third conductive posts 403.Third conductive posts 403 have several conductive columns.
Third dielectric materials layer 401 is a conductive film, with phenolic group resin, epoxy, silicon substrate tree
Rouge or other casting die compounds appropriate, but not limited to this.In the present embodiment, there are four lead the tool of third conductive posts 403
Electric column.However, in other embodiments, according to the different purposes and type of board structure 4, third conductive posts 403 can be distinguished
With any number of conductive column, it is not limited with the quantity of conductive column described in the present embodiment.
Privates layer 301 has a surface 3011.Third dielectric materials layer 401 is set to the table of privates layer 301
Face 3011 and the surface 2051 of the second dielectric materials layer 205.Third conductive posts 403 are set to third dielectric materials layer 401
It is interior, and partially it is electrically connected privates layer 301.In detail, the conductive column of third conductive posts 403 has a first end
And the second end relative to first end, the first end of the conductive column of third conductive posts 403 are electrically connected privates layer
301；The second end of the conductive column of third conductive posts 403 is exposed to outside third dielectric materials layer 401.
The fifth embodiment of the present invention is as shown in figure 5, be the schematic diagram of a board structure 5.One structure class of board structure 5
It is similar to the structure of board structure 1 described in the first embodiment of the present invention, difference is board structure 5 with one first conductive column
Layer 501 replaces conductive posts 105, and replaces dielectric materials layer 107 with one first dielectric materials layer 503；Meanwhile board structure 5
Further include one second dielectric materials layer 505, a flexible circuit board 507, one second conductive posts and a privates layer 511.
First conductive posts 501 have several conductive columns.Similarly, the second conductive posts also have several conductive column 509A, 509B,
509C。
First dielectric materials layer 503 or the second dielectric materials layer 505 are a conductive film, with phenolic aldehyde Ji Shu
Rouge, epoxy, silicone or other casting die compounds appropriate, but not limited to this.In the present embodiment, it first leads
Electric column layer 501 has two conductive columns；There are five conductive column 509A, 509B, 509C for second conductive posts tool.However, other
In embodiment, according to the different purposes and type of board structure 5, the first conductive posts 501 and the second conductive posts can be distinguished
With any number of conductive column, it is not limited with the quantity of conductive column described in the present embodiment.
First dielectric materials layer 503 has a surface 5031.Second conductor layer 109 has a surface 1091.Second dielectric
Material layer 505 has a surface 5051.Flexible circuit board 507 has a flexible circuit board conductor layer 5071.Second dielectric material
Layer 505 is set to the surface 1091 of the second conductor layer 109 and the surface 5031 of the first dielectric materials layer 503.Flexible circuit board
507 are set to the surface 5051 of the second dielectric materials layer 505.Privates layer 511 is set on flexible circuit board 507.Second
Conductive posts are set in the second dielectric materials layer 505 and flexible circuit board 507, and be set to the second conductor layer 109 and
Between privates layer 511；Meanwhile second conductive posts via flexible circuit board 507 be electrically connected the second conductor layer 109 and
Privates layer 511.
In detail, the conductive column 509A of the second conductive posts is electrically connected the second conductor layer 109 and privates layer
511；The conductive column 509B of second conductive posts is electrically connected the second conductor layer 109, privates layer 511 and flexible circuit board
Conductor layer 5071；The conductive column 509C of second conductive posts is electrically connected privates layer 511 and flexible circuit board conductor layer
5071。
It should be noted that the metal support plate 101 of board structure 1,2,3,4,5 described in leading portion by aluminium, copper, stainless steel or its
A metal plate made of combining.Meanwhile board structure 1,2,3,4,5 separately includes two or three conductor layers, and its conductor layer point
Not electricity Xing Lianjie conductive posts conductive column.However, in other embodiments, board structure 1,2,3,4,5 may include arbitrary number
Purpose conductor layer and conductive posts, and its conductor layer is electrically connected the conductive column of conductive posts.The common skill of technical field
Art personnel can be led by the quantity and conductor layer electric connection of the conductor layer above-mentioned for illustrating to understand board structure 1,2,3,4,5
The mode of the conductive column of electric column layer, therefore details are not described herein.
The sixth embodiment of the present invention is as shown in fig. 6, it is a kind of flow chart of the production method of semiconductor substrate structure.
Production method described in the present embodiment can be used for making semiconductor board structure, such as: board structure described in first embodiment
1.The step of the production method of the semiconductor substrate structure of the present embodiment will be further illustrated by Fig. 6 and Fig. 7 A to Fig. 7 F below
Suddenly.
Firstly, providing the metal support plate 101 being painted such as Fig. 7 A in step 601.Wherein, metal support plate 101 by aluminium,
A metal plate made of copper, stainless steel or combinations thereof.Then, in step 603, as shown in Figure 7 B, a conductor layer No.1 is formed
103 in a surface 1011 of metal support plate 101.
In step 605, as seen in figure 7 c, a conductive posts 105 are formed in a surface 1031 of conductor layer No.1 103.
In step 607, as illustrated in fig. 7d, a dielectric materials layer 107 is formed, it is made to coat conductor layer No.1 103 and conductive posts
105, and expose one end of conductive posts 105.Then, in step 609, as seen in figure 7e, formed one second conductor layer 109 in
On one end of the conductive posts 105 of exposing and dielectric materials layer 107.Finally, as shown in Figure 7 F, forming one absolutely in step 611
Edge protective layer 111 on dielectric materials layer 107 and the second conductor layer 109, make its partly cover dielectric materials layer 107 and
Second conductor layer 109.
The seventh embodiment of the present invention is as shown in figure 8, it is a kind of flow chart of the production method of semiconductor substrate structure.
Production method described in the present embodiment can be used for making semiconductor board structure, such as: board structure described in second embodiment
2.Wherein, the step 801 of the 7th embodiment shown in Fig. 8 is to the step 601 of step 809 and the sixth embodiment of the present invention to step
Rapid 609 is identical, therefore details are not described herein.
It should be noted that the step 805 of the 7th embodiment forms the conductive posts 105 with the step 605 of sixth embodiment
Identical first conductive posts 201；The step 807 of 7th embodiment forms the dielectric material with the step 607 of sixth embodiment
107 identical first dielectric materials layer 203 of layer.Hereinafter the present embodiment will be further illustrated by Fig. 8 and Fig. 9 A to Fig. 9 B
The subsequent step of the production method of semiconductor substrate structure.
In step 811, as shown in Figure 9 A, one second conductive posts 207 are formed in a surface of the second conductor layer 109
1091.Finally, as shown in Figure 9 B, forming one second dielectric materials layer 205 in step 813, it being made to coat the second conductor layer
109 and second conductive posts 207, and expose one end of the second conductive posts 207.
The eighth embodiment of the present invention is as shown in Figure 10, is a kind of process of the production method of semiconductor substrate structure
Figure.Production method described in the present embodiment can be used for making semiconductor board structure, such as: substrate knot described in the 5th embodiment
Structure 5.Wherein, the step of step 1001 to step 1009 and the sixth embodiment of the present invention of the 8th embodiment shown in Fig. 10
601 is identical to step 609, therefore details are not described herein.
It should be noted that the step 1005 of the 8th embodiment forms the conductive posts 105 with the step 605 of sixth embodiment
Identical first conductive posts 501；The step 1007 of 8th embodiment forms the dielectric material with the step 607 of sixth embodiment
107 identical first dielectric materials layer 503 of layer.Hereinafter the present embodiment will be further illustrated by Figure 10 and Figure 11 A to Figure 11 D
Semiconductor substrate structure production method subsequent step.
In step 1011, as shown in Figure 11 A, one second dielectric materials layer 505 is formed, it is made to coat the second conductor layer
109.Then, in step 1013, as shown in Figure 11 B, by the flexible circuit board with a flexible circuit board conductor layer 5071
507 are set to a surface 5051 of the second dielectric materials layer 505.In step 1015, as shown in Figure 11 C, in the second dielectric material
In the bed of material 505 and flexible circuit board 507, second conductive posts with several conductive column 509A, 509B, 509C are formed, and
Expose one end of conductive column 509A, 509B, 509C.Finally, as shown in Figure 11 D, forming a privates layer in step 1017
511 on one end and flexible circuit board 507 of conductive column 509A, 509B, 509C of exposing.
In addition, further including Figure 12 such as in the step 607, step 813 and step 1011 for forming dielectric materials layer and being painted
The step of.Firstly, providing a casting die compound in step 1201.Wherein, casting die compound can be phenolic group resin, epoxy
Base resin, silicone or other casting die compounds appropriate.In step 1203, heating casting die compound is to one liquid
State.Then, in step 1205, the casting die compound of liquid condition is presented in injection, makes the casting die compound that liquid condition is presented
Coated wire layer or conductive posts.Finally, solidifying the casting die compound that liquid condition is presented in step 1207 to form a casting
Mold compound layer.
In conclusion board structure of the semiconductor substrate structure of the invention and preparation method thereof using metal support plate production
To replace existing Rigid Flex or soft or hard joint plate；Meanwhile conductor layer, conductive posts are formed with more easy production process
With dielectric materials layer.Accordingly, semiconductor substrate structure and preparation method thereof of the invention may achieve the requirement of substrate slimming, together
When meet highly conductive characteristic, and have both rigidity and thermal diffusivity.In this way, which process time of board structure and substantially will can be shortened
Reduce cost of manufacture.
The above embodiments are only used to enumerate state sample implementation of the invention, and illustrate technical characteristic of the invention, not
For limiting protection category of the invention.Any skilled person can the arrangement of unlabored change or equality belong to
The range that the present invention is advocated, the scope of the present invention should be subject to the claims.
Claims (7)
1. a kind of semiconductor substrate, which is characterized in that it includes:
One metal support plate；
One conductor layer No.1 is set to a surface of the metal support plate；
One first dielectric materials layer is set to a surface of the conductor layer No.1；
One second conductor layer；
One first conductive posts are set in first dielectric materials layer and are set to the conductor layer No.1 and second conducting wire
Between layer, there is at least one first conductive column,
Wherein, the conductor layer No.1 and second conductor layer are electrically connected by least one first conductive column；
One second dielectric materials layer is set to a surface of second conductor layer and a surface of first dielectric materials layer；
One flexible circuit board is set to a surface of second dielectric materials layer, has a flexible circuit board conductor layer；
One privates layer；And
One second conductive posts are set in second dielectric materials layer and are set to second conductor layer and the privates
Between layer, there is at least one second conductive column；
Wherein, second conductor layer and the privates layer are electrically connected by least one second conductive column.
2. semiconductor substrate as described in claim 1, which is characterized in that also include:
One third dielectric materials layer is set to a surface of the privates layer and a surface of second dielectric materials layer；
And
One third conductive posts are set in the third dielectric materials layer, have an at least third conductive column；
Wherein, which has a first end and the second end relative to the first end, this at least one
The first end of third conductive column is electrically connected the privates layer, and the second end of an at least third conductive column is exposed to the third
Outside dielectric materials layer.
3. semiconductor substrate as claimed in claim 2, which is characterized in that the third dielectric materials layer is a casting die compound
Layer, the conductive film have one of phenolic group resin, epoxy and silicone.
4. semiconductor substrate as described in claim 1, which is characterized in that also include:
One second dielectric materials layer is set to a surface of second conductor layer and a surface of first dielectric materials layer；
And
One second conductive posts are set in second dielectric materials layer, have at least one second conductive column；
Wherein, which has a first end and the second end relative to the first end, this at least one
The first end of second conductive column is electrically connected second conductor layer, the second end of at least one second conductive column be exposed to this second
Outside dielectric materials layer.
5. semiconductor substrate as described in claim 1, which is characterized in that first dielectric materials layer or second dielectric material
Layer be respectively a conductive film, the conductive film have phenolic group resin, epoxy and silicone its
One of.
6. a kind of production method of semiconductor substrate, which is characterized in that comprise the steps of
One metal support plate is provided；
A conductor layer No.1 is formed in a surface of the metal support plate；
One first conductive posts are formed in a surface of the conductor layer No.1；
Form one first dielectric materials layer, it made to coat the conductor layer No.1 and first conductive posts, and expose this first
One end of conductive posts；
Formed one second conductor layer in first conductive posts of exposing one end and first dielectric materials layer on,
Wherein, the conductor layer No.1 and second conductor layer are electrically connected by first conductive posts；
One second dielectric materials layer is formed, it is made to coat second conductor layer；
One flexible circuit board is set to a surface of second dielectric materials layer；
In in the second dielectric materials layer and flexible circuit board, one second conductive posts with multiple conductive columns are formed；And
A privates layer is formed on one end and flexible circuit board of the conductive column of exposing.
7. the production method of semiconductor substrate as claimed in claim 6, which is characterized in that form first dielectric materials layer
Step or the step of forming second dielectric materials layer, also comprise the steps of
One casting die compound is provided；
The casting die compound is heated to a liquid condition；
The casting die compound of the liquid condition is presented in injection, and the casting die compound that the liquid condition is presented is made to coat first conducting wire
One of layer, first conductive posts, second conductor layer and second conductive posts；And
Solidify the casting die compound that the liquid condition is presented to form a conductive film.
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| CN201610035986.5A CN106992165B (en) | 2016-01-20 | 2016-01-20 | Semiconductor substrate and preparation method thereof |
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| CN106992165B true CN106992165B (en) | 2019-08-30 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5266746A (en) * | 1990-11-29 | 1993-11-30 | Mitsui Toatsu Chemicals, Inc. | Flexible printed circuit board having a metal substrate |
| CN104952839A (en) * | 2014-03-28 | 2015-09-30 | 恒劲科技股份有限公司 | Packaging device and manufacturing method therefor |
| TW201601227A (en) * | 2014-06-16 | 2016-01-01 | 恆勁科技股份有限公司 | Package method |
| CN105226043A (en) * | 2014-06-16 | 2016-01-06 | 恒劲科技股份有限公司 | Packaging device and manufacturing method thereof |
-
2016
- 2016-01-20 CN CN201610035986.5A patent/CN106992165B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5266746A (en) * | 1990-11-29 | 1993-11-30 | Mitsui Toatsu Chemicals, Inc. | Flexible printed circuit board having a metal substrate |
| CN104952839A (en) * | 2014-03-28 | 2015-09-30 | 恒劲科技股份有限公司 | Packaging device and manufacturing method therefor |
| TW201601227A (en) * | 2014-06-16 | 2016-01-01 | 恆勁科技股份有限公司 | Package method |
| CN105226043A (en) * | 2014-06-16 | 2016-01-06 | 恒劲科技股份有限公司 | Packaging device and manufacturing method thereof |
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| CN106992165A (en) | 2017-07-28 |
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