CN106982042A - A kind of MEMS piezo-electric resonators of novel support structure - Google Patents
A kind of MEMS piezo-electric resonators of novel support structure Download PDFInfo
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- CN106982042A CN106982042A CN201710164136.XA CN201710164136A CN106982042A CN 106982042 A CN106982042 A CN 106982042A CN 201710164136 A CN201710164136 A CN 201710164136A CN 106982042 A CN106982042 A CN 106982042A
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- support beam
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- substrate
- inner support
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- 239000000758 substrate Substances 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 239000012528 membrane Substances 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 238000004891 communication Methods 0.000 abstract description 3
- 230000021715 photosynthesis, light harvesting Effects 0.000 abstract description 3
- 230000000644 propagated effect Effects 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000013016 damping Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000010358 mechanical oscillation Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02338—Suspension means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02433—Means for compensation or elimination of undesired effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02433—Means for compensation or elimination of undesired effects
- H03H2009/0244—Anchor loss
Abstract
The invention belongs to radio communication and MEMS (MEMS) technical field there is provided a kind of MEMS piezo-electric resonators of novel support structure, to overcome the low defect of the Q values of existing MEMS resonator；Increase circular housing and inner support beam in MEMS piezoelectric resonator structures of the present invention, using the connected mode of the circular housing outer support beam substrate of silicon vibrating mass inner support beam, and at the standing wave node that the link position of circular housing and outer support beam is chosen at when mechanical wave is propagated in circular housing, so that two strands of mechanical waves transferring out of inner support beam are anti-phase at node and cancel out each other, it is substantially reduced the energy dissipation caused from resonant body to substrate by support beam conduction, anchor point loss is reduced, so as to lift the quality factor q of resonator.
Description
Technical field
The invention belongs to radio communication and MEMS (MEMS) technical field, it is related to MEMS piezo-electric resonators, specifically
A kind of MEMS piezo-electric resonators of novel support structure are provided.
Background technology
As electronic equipment is to high-performance, the further requirement of microminaturization, electronic component all to high-performance, it is low into
Originally, the direction of low-power consumption is developed；High quality factor (Q values), the resonator of miniaturization turns into be changed on future electronic communication system piece
With the bottleneck of miniaturization.MEMS piezo-electric resonators are the pressures of the high-performance RF based on mechanical oscillation that a kind of use MEMS technology makes
Electrical resonator device, the electrical signal of input is converted into mechanical oscillation by mechanical-electric coupling, and filter function is completed in mechanical domain, it
Mechanical signal is converted into electrical signal output again afterwards, thus with extraordinary frequency selective characteristic.This MEMS resonator
Vibrating mass manufactured mostly using semi-conducting material, the input energy transformational structure of resonator, output energy converting structure all with
Vibrating mass is joined directly together, and the form of multiple kinds of energy loss is physically present, wherein main loss has anchor point loss, thermoelasticity
Damping and air damping.These factors constrain the Q values of MEMS resonator, and the resonator of high q-factor can bring more preferable frequency
Source phase noise specifications；At present, higher phase noise specifications are required to specific application scenarios.Therefore, research high q-factor, easily
Integrated MEMS resonator has great significance to integrated radio-frequency circuit with system.
The content of the invention
It is an object of the invention to the low defect of the Q values for existing MEMS resonator in background technology, there is provided a kind of new
The MEMS piezo-electric resonators of type supporting construction.Increase circular housing and inner support beam in MEMS piezoelectric resonator structures of the present invention,
Using the connected mode of silicon vibrating mass-inner support beam-circle housing-outer support beam-substrate, and by circular housing and outer support beam
Link position be chosen at the standing wave node of outer support beam so that two strands of mechanical waves that inner support beam is transferred out are at node
It is anti-phase and cancel out each other, it is substantially reduced from resonant body to substrate and the energy dissipation caused is conducted by support beam, reduction anchor point is damaged
Consumption, so as to lift the quality factor q of resonator.
To achieve the above object, the technical solution adopted by the present invention is：
A kind of MEMS piezo-electric resonators of novel support structure, including：Silicon vibrating mass (1), piezoelectric membrane 2, input electrode
(3-1), output electrode (3-2), supporting table (15-1,15-2), outer support beam (14-1,14-2), oxidation insulating layer (8-1,8-2,
9-1,9-2,10-1,10-2,11-1,11-2,16-1,16-2), pad (7-1,7-2), conductive membrane layer (4-1,4-2,5-1,
5-2,6-1,6-2) and substrate (17-1,17-2), wherein, the supporting table is arranged in substrate, and the pad is arranged at support
On platform, oxidation insulating layer is respectively provided between pad and supporting table, between supporting table and substrate；Characterized in that, the MEMS pressures
Electrical resonator also includes：Circular housing (13) and inner support beam (12-1,12-2), the silicon vibrating mass are connected by inner support beam
Circular housing, the circular housing is connected as one by outer support beam and supporting table, sets piezoelectricity thin on the silicon vibrating mass
Input electrode and output electrode are set on film, the piezoelectric membrane, and the input electrode, output electrode are by being arranged at inner support
Beam, circular housing, the conductive membrane layer on outer support beam be connecteds with pad, the conductive membrane layer with inner support beam, circle outside
Oxidation insulating layer is set between frame and outer support beam；The link position of the circular housing and outer support beam is mechanical wave in circle
At standing wave node when being propagated in housing.
Further, the silicon vibrating mass is rectangle.
From operation principle：
The gross energy E that the present invention is stored in vibrating masssIn the case of certain, passed by reducing from resonant body by support beam
The mechanical vibrational energy for leading substrate dissipates, and reaches dissipation ENERGY E in reduction each vibration perioddPurpose, so as to be lifted humorous
Shake the quality factor q of device：
In the present invention, the input electrode (3-1), output electrode (3-2) are distributed in the different vibration trends of silicon vibrating mass and (squeezed
Pressure is shunk) region on, input/output metal electrode and piezoelectric thin film layer and the common structure of monocrystalline silicon vibrating mass below
Into input/output transducer.Silicon vibrating mass is operated in the laterally expanding of arbitrary order-shrink mode of oscillation, is rectangle, by interior
Support beam-housing-outer support beam-support table structure is connected as one；The vibrating mass that resonant frequency f is adulterated by silicon crystal it is lateral
Length L, Young's modulus E and density of material ρ determine that its relational expression is：
Because Young's modulus E and density of material ρ are certain, therefore, the centre frequency f of resonator design can be by its design
Length L determines, its concrete numerical value can in several microns to hundreds of microns unrestricted choice.
The support beam of above-mentioned circular housing and substrate is arranged on the MEMS piezo-electric resonators at standing wave node, using monocrystalline silicon
Layer makes vibrating mass, support beam, circular frame structure and each electrode structure layer.Circular housing is arranged on machine with outer support beam
At standing wave node when tool ripple is propagated in circular housing, the mechanical wave transferred out from two inner support beams
WithIt is anti-phase at standing wave node, because monocrystalline silicon loss is minimum, it can be assumed that A=B is set up, so that two strands of machines
Tool ripple is cancelled out each other.The calculation formula of standing wave node is as follows：
Then：
Wherein, ω is mechanical angular frequency, and t is the time, and λ is mechanical wave wavelength, d1For node to near-end inner support beam
Distance, d2For the distance of node to distal end inner support beam, A is the amplitude that near-end inner support beam passes to out mechanical wave, and B is in distal end
Support beam passes to out the amplitude of mechanical wave.
The beneficial effects of the present invention are：
The present invention, which is provided, increases circular housing and Nei Zhi in a kind of MEMS piezo-electric resonators of novel support structure, its structure
Beam is supportted, using the connected mode of silicon vibrating mass-inner support beam-circle housing-outer support beam-substrate, and by circular housing and outside
The link position of support beam is chosen at the standing wave node of outer support beam, so that two strands of mechanical waves that inner support beam is transferred out exist
It is anti-phase and cancel out each other at node, it is substantially reduced from resonant body to substrate and the energy dissipation caused, reduction is conducted by support beam
Anchor point is lost, so as to lift the quality factor q of resonator.
Brief description of the drawings
Fig. 1 is the MEMS piezoelectric resonator structures schematic diagram (top view) of novel support structure of the present invention；
Fig. 2 is Fig. 1 left front 45 degree of angle views that incline；
Fig. 3 is Fig. 1 side view；
In figure：1：Silicon vibrating mass, 2：Piezoelectric membrane, 3-1：Input PZT (piezoelectric transducer) Top electrode, 3-2：Output end piezoelectricity
Transducer Top electrode, 4-1,4-2,5-1,5-2,6-1,6-2：Thin conductive metal layer, 7-1,7-2：Metal pad, 8-1,8-2,9-
1、9-2、10-1、10-2、11-1、11-2：Oxidation insulating layer, 12-1,12-2：Inner support beam, 14-1,14-2：Outer support beam,
13：Circular frame structure, 15-1,15-2：Supporting table, 16-1,16-2：SOI Substrate oxide insulating layer, 18：Polysilicon layer is carved
Lose region, 19：Substrate oxide skin(coating) etch areas.
Embodiment
The present invention is described in further details with reference to the accompanying drawings and examples.
The present embodiment provides the MEMS piezo-electric resonators of novel support structure, and its result as shown in Figure 1, Figure 2, Figure 3 shows, is used
SOI Substrate makes, and the SOI Substrate is by 400 μm of polycrystalline silicon substrate, 1 μm of silicon dioxide insulating layer and 10 μm of monocrystalline silicon knot
Structure layer composition.By taking the MEMS piezo-electric resonators of Lateral Vibration Modal as an example：
During element manufacturing, layer of silicon dioxide insulating barrier is grown on the monosilicon first, fluorine is used after smearing photoresist photoetching
Change hydrogen etched shape and go out 8-1,8-2,9-1,9-2,10-1,10-2,11-1,11-2；Then piezoelectricity is obtained using reactive sputtering thin
Film, recycles wet etching to obtain shape 2；Then metallic film is obtained using reactive sputtering, etching obtains input and output transducing
Device Top electrode 3-1,3-2, metal connection cabling 4-1,4-2,5-1,5-2,6-1,6-2；Then reactive ion silicon color sensor is utilized
Technology etches vibration square 1 and housing 13, support beam 12-1,12-2,14-1,14-2 on 10 μm of monocrystalline silicon；Vibration side
Block 1, support beam 12-1,12-2, circular housing 13, support beam 14-1,14-2 and supporting table 15-1,15-2 are connected.Finally
Substrate is etched from bottom using reactive ion silicon color sensor technology to form inner chamber 17, then substrate silicon dioxide insulating layer is etched
Inner chamber 18 is formed, makes total hanging, finally encapsulated.
The foregoing is only a specific embodiment of the invention, any feature disclosed in this specification, except non-specifically
Narration, can alternative features equivalent by other or with similar purpose replaced；Disclosed all features or all sides
Method or during the step of, in addition to mutually exclusive feature and/or step, can be combined in any way.
Claims (2)
1. a kind of MEMS piezo-electric resonators of novel support structure, including：Silicon vibrating mass (1), piezoelectric membrane 2, input electrode (3-
1), output electrode (3-2), supporting table (15-1,15-2), outer support beam (14-1,14-2), oxidation insulating layer (8-1,8-2,9-
1st, 9-2,10-1,10-2,11-1,11-2,16-1,16-2), pad (7-1,7-2), conductive membrane layer (4-1,4-2,5-1,5-
2nd, 6-1,6-2) and substrate (17-1,17-2), wherein, the supporting table is arranged in substrate, and the pad is arranged at supporting table
On, it is respectively provided with oxidation insulating layer between pad and supporting table, between supporting table and substrate；Characterized in that, the MEMS piezoelectricity
Resonator also includes：Circular housing (13) and inner support beam (12-1,12-2), the silicon vibrating mass is connected by inner support beam to be justified
Shape housing, the circular housing is connected as one by outer support beam and supporting table, and piezoelectric membrane is set on the silicon vibrating mass,
Input electrode and output electrode be set on the piezoelectric membrane, the input electrode, output electrode by be arranged at inner support beam,
Conductive membrane layer on circular housing, outer support beam is connected with pad, the conductive membrane layer and inner support beam, circular housing and
Oxidation insulating layer is set between outer support beam；The link position of the circular housing and outer support beam is mechanical wave in circular housing
At standing wave node during middle propagation.
2. the MEMS piezo-electric resonators of novel support structure as described in claim 1, it is characterised in that the silicon vibrating mass is length
It is square.
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| CN201710164136.XA CN106982042B (en) | 2017-03-20 | 2017-03-20 | MEMS piezoelectric resonator with supporting structure |
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| CN201710164136.XA CN106982042B (en) | 2017-03-20 | 2017-03-20 | MEMS piezoelectric resonator with supporting structure |
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| CN106982042B CN106982042B (en) | 2020-06-16 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108306548A (en) * | 2018-04-11 | 2018-07-20 | 中国工程物理研究院电子工程研究所 | A kind of driving structure of traveling wave micro motor |
| CN108896654A (en) * | 2018-05-11 | 2018-11-27 | 电子科技大学 | Energy consumption fact measurement method based on piezoelectric sound wave resonant transducer |
| CN108923765A (en) * | 2018-08-27 | 2018-11-30 | 中国科学院电子学研究所 | MEMS thin film bulk acoustic wave resonator |
| CN111490741A (en) * | 2019-01-29 | 2020-08-04 | 中国科学院半导体研究所 | Arrayed plane shear mode radio frequency micro-electromechanical resonator |
| CN111865249A (en) * | 2019-04-29 | 2020-10-30 | 中国科学院半导体研究所 | Resonant structure and manufacturing method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108306548A (en) * | 2018-04-11 | 2018-07-20 | 中国工程物理研究院电子工程研究所 | A kind of driving structure of traveling wave micro motor |
| CN108306548B (en) * | 2018-04-11 | 2023-07-25 | 中国工程物理研究院电子工程研究所 | Driving structure of traveling wave micromotor |
| CN108896654A (en) * | 2018-05-11 | 2018-11-27 | 电子科技大学 | Energy consumption fact measurement method based on piezoelectric sound wave resonant transducer |
| CN108896654B (en) * | 2018-05-11 | 2021-01-26 | 电子科技大学 | Energy dissipation factor measuring method based on piezoelectric acoustic wave resonant sensor |
| CN108923765A (en) * | 2018-08-27 | 2018-11-30 | 中国科学院电子学研究所 | MEMS thin film bulk acoustic wave resonator |
| CN111490741A (en) * | 2019-01-29 | 2020-08-04 | 中国科学院半导体研究所 | Arrayed plane shear mode radio frequency micro-electromechanical resonator |
| CN111490741B (en) * | 2019-01-29 | 2023-02-28 | 中国科学院半导体研究所 | Arrayed plane shear mode radio frequency micro-electromechanical resonator |
| CN111865249A (en) * | 2019-04-29 | 2020-10-30 | 中国科学院半导体研究所 | Resonant structure and manufacturing method thereof |
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