CN106981541B - A kind of coating process of crystal silicon solar energy battery - Google Patents
A kind of coating process of crystal silicon solar energy battery Download PDFInfo
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- CN106981541B CN106981541B CN201710192931.XA CN201710192931A CN106981541B CN 106981541 B CN106981541 B CN 106981541B CN 201710192931 A CN201710192931 A CN 201710192931A CN 106981541 B CN106981541 B CN 106981541B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 45
- 239000010703 silicon Substances 0.000 title claims abstract description 45
- 239000013078 crystal Substances 0.000 title claims abstract description 33
- 238000000576 coating method Methods 0.000 title claims abstract description 27
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 24
- 150000001875 compounds Chemical class 0.000 claims abstract description 20
- 229910052796 boron Inorganic materials 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 15
- 238000004544 sputter deposition Methods 0.000 claims abstract description 15
- -1 boron hydrogen alkane Chemical class 0.000 claims abstract description 14
- 239000001257 hydrogen Substances 0.000 claims abstract description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 13
- 239000002356 single layer Substances 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- 239000011261 inert gas Substances 0.000 claims abstract description 8
- 239000008246 gaseous mixture Substances 0.000 claims abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 239000007864 aqueous solution Substances 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 229910052724 xenon Inorganic materials 0.000 claims description 5
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000013077 target material Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 210000004027 cell Anatomy 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 238000006392 deoxygenation reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000006210 lotion Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/067—Borides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of coating process of crystal silicon solar energy battery, sputter single layer B-Al compound antireflective coating using on crystalline silicon substrates surface；Sputtering method: prerinse is carried out to crystalline silicon substrates surface；Operation will be performed etching by prewashed surface of crystalline silicon；Crystalline silicon through over-etching operation is transferred in magnetron sputtering room, as substrate, using pure aluminum as target, the gaseous mixture for being filled with boron hydrogen alkane and inert gas applies back bias voltage to substrate, sputtered, obtain B-Al compound antireflective coating.Coating Materials of the present invention is novel, can be effectively improved the photoelectric conversion efficiency of crystal silicon solar energy battery.
Description
Technical field
The present invention relates to the plating fields of sputtering method, and in particular to a kind of coating process of crystal silicon solar energy battery.
Background technique
Crystalline silicon is to prepare one of important source material of solar cell material.It is single in silicon systems column solar cell material
Crystal silicon material undoubtedly has highest photoelectric conversion efficiency, and corresponding technology development is also relatively more comprehensive.However due to monocrystalline
Silion cell has complicated composition mechanism and high manufacturing cost, and the monocrystalline silicon series limited to a certain extent is too
The application of positive energy battery material.And polysilicon membrane series solar battery supplements monocrystalline silicon battery not to a certain extent
Foot occupies one of the application direction that the certain market share and people put forth effort development.Polysilicon membrane series solar battery
Film is prepared on cheap elementary silicon substrate material by the methods of chemical vapor deposition, magnetron sputtering method, then using electricity
Pond manufacturing technology manufactures multi-crystal silicon film solar battery.The photoelectric conversion efficiency of this kind of battery can satisfy actual demand,
And cost is acceptable, therefore favored by people.
How two driving factors for promoting multi-crystal silicon film solar battery further to develop mainly reduce on a large scale
Cost and how to improve photoelectric conversion efficiency.Focus on reducing the manufacturing cost and material of silicon class substrate material for the former
Material is recycled and is regenerated, and for the latter, new thin film system is developed, new coating process is researched and developed, is all to improve photoelectricity
The feasible program of transfer efficiency.
Chinese patent CN201510878685.4 discloses a kind of technique for vacuum coating, the invention using electron beam evaporation plating,
The method of sputtering plating or thermal current vapor deposition forms SiO in product surface2Film layer improves the corrosion resistance of product.But it should
The standby SiO of patent system2Uneven film thickness is even and crystal structure is complicated.
Therefore, for the problem present on, need to invent a kind of coating process of the film of new material type, to reach
To the purpose for the photoelectric conversion efficiency for improving crystal silicon solar energy battery.
Summary of the invention
The present invention is in view of the above-mentioned problems, provide a kind of coating process of crystal silicon solar energy battery.
Technical solution used by the present invention solves the above problems is: a kind of coating process of crystal silicon solar energy battery,
Single layer B-Al compound antireflective coating is sputtered using on crystalline silicon substrates surface；The sputtering side of single layer B-Al compound antireflective coating
Method, comprising the following steps:
Step S1 carries out prerinse to crystalline silicon substrates surface；
Step S2 will perform etching operation by prewashed surface of crystalline silicon；
Crystalline silicon through over-etching operation is transferred in magnetron sputtering room by step S3, as substrate, is made using pure aluminum
It is 10 in vacuum degree for target-4Pa~5 × 10-3Pa, target temperature are 200 DEG C~250 DEG C, and sputtering current is 12A~14A's
Under the conditions of, with 150g/cm3~200g/cm3Air inflow be filled with the gaseous mixture of boron hydrogen alkane and inert gas, until in magnetron sputtering room
Pressure stablize 10-2Pa~10-3Pa applies back bias voltage 120V~150V to substrate, sputters 10min~15min, obtain boron
Aluminium compound antireflective coating.
Further, in step S1, prerinse specifically: cleaned using the ultrasonic wave of addition cleansing medium, ultrasound
Wave frequency rate is 50kHz~200kHz, and temperature is 40 DEG C~60 DEG C, power density 0.1W/cm2~0.8W/cm2。
Further, cleansing medium are as follows: RBS25 type, 740 type liquid of RBS35 type, 940 type of RBS IND or RBS IND
Any one of body cleaning agent.
Further, in step S2, etching operation specifically: the HNO for the use of volumetric concentration being first 10%~30%3It is water-soluble
Liquid aoxidizes surface of crystalline silicon, reuses the HF aqueous solution that volumetric concentration is 2%~5% and removes silicon.
Further, crystalline silicon are as follows: the N-type silicon containing phosphorus impurities.
Further, in step S3, the heating temperature of substrate are as follows: 150 DEG C~180 DEG C.
Further, in step S3, the mixed proportion of boron hydrogen alkane and inert gas are as follows: 5%/95%~10%/90%.
Further, inert gas includes: any one of argon gas, xenon.
Further, in step S3, the thickness of B-Al compound antireflective coating are as follows: 20nm~70nm.
The invention has the advantages that
1. the present invention carries out plated film to silicon chip substrate material using magnetron sputtering method, there is reliable and stable technological parameter,
Controlled level is high, high production efficiency；
2. the present invention is doped silicon wafer with boron element and aluminium element, there is preferable hole launching efficiency, performance is steady
Transfer efficiency that is fixed and improving hull cell；
3. the present invention plates single antireflection film on crystal silicon cell surface, that is, the transmitance of sunlight is increased, is improved
The working efficiency of solar battery, and reduce the defect of antireflective coating coating, improve the service efficiency of antireflective coating；
4. the obtained film thickness of the present invention is uniform, good product quality, it is convenient to operate, and is suitable for producing preparation in enormous quantities.
Specific embodiment
The embodiment of the present invention is described in detail below, but what the present invention can be defined by the claims and cover
Multitude of different ways is implemented.
Embodiment 1
A kind of coating process of crystal silicon solar energy battery sputters single layer B-Al compound using on crystalline silicon substrates surface
Antireflective coating；The sputtering method of single layer B-Al compound antireflective coating, comprising the following steps:
Step S1 carries out prerinse to crystalline silicon substrates surface, specifically: using in addition RBS25 type liquid ceanser
The ultrasonic wave of medium is cleaned, ultrasonic frequency 50kHz, and temperature is 40 DEG C, power density 0.1W/cm2；
Step S2 will perform etching operation by prewashed surface of crystalline silicon, specifically: be first using volumetric concentration
10% HNO3Aqueous solution aoxidizes the N-type silicon containing phosphorus impurities, reuses the HF aqueous solution removal oxidation that volumetric concentration is 2%
Silicon.
Crystalline silicon through over-etching operation is transferred in magnetron sputtering room by step S3, as substrate, i.e., hot to 150 DEG C；
It is 10 in vacuum degree using pure aluminum as target-4Pa, target temperature are 200 DEG C, under conditions of sputtering current is 12A, with
150g/cm3Air inflow be filled with the gaseous mixture of boron hydrogen alkane and argon gas, until the pressure in magnetron sputtering room is stablized 10-2Pa, to base
Material applies back bias voltage 120V, sputters 10min, obtains the B-Al compound antireflective coating with a thickness of 20nm；Wherein, boron hydrogen alkane and argon
The mixed proportion of gas is 5%/95%.
Embodiment 2
A kind of coating process of crystal silicon solar energy battery sputters single layer B-Al compound using on crystalline silicon substrates surface
Antireflective coating；The sputtering method of single layer B-Al compound antireflective coating, comprising the following steps:
Step S1 carries out prerinse to crystalline silicon substrates surface, specifically: it is situated between using addition RBS35 type liquid ceanser
The ultrasonic wave of matter is cleaned, ultrasonic frequency 200kHz, and temperature is 60 DEG C, power density 0.8W/cm2；
Step S2 will perform etching operation by prewashed surface of crystalline silicon, specifically: be first using volumetric concentration
30% HNO3Aqueous solution aoxidizes the N-type silicon containing phosphorus impurities, reuses the HF aqueous solution removal oxidation that volumetric concentration is 5%
Silicon.
Crystalline silicon through over-etching operation is transferred in magnetron sputtering room by step S3, as substrate, i.e., hot to 180 DEG C；
It is 5 × 10 in vacuum degree using pure aluminum as target-3Pa, target temperature are 250 DEG C, under conditions of sputtering current is 14A,
With 200g/cm3Air inflow be filled with the gaseous mixture of boron hydrogen alkane and xenon, until the pressure in magnetron sputtering room is stablized 10-3Pa is right
Substrate applies back bias voltage 150V, sputters 15min, obtains the B-Al compound antireflective coating with a thickness of 70nm；Wherein, boron hydrogen alkane and
The mixed proportion of xenon is 10%/90%.
Embodiment 3
A kind of coating process of crystal silicon solar energy battery sputters single layer B-Al compound using on crystalline silicon substrates surface
Antireflective coating；The sputtering method of single layer B-Al compound antireflective coating, comprising the following steps:
Step S1 carries out prerinse to crystalline silicon substrates surface, specifically: it is clear using addition 940 type liquid of RBS IND
The ultrasonic wave of lotion medium is cleaned, ultrasonic frequency 125kHz, and temperature is 50 DEG C, power density 0.4W/cm2；
Step S2 will perform etching operation by prewashed surface of crystalline silicon, specifically: be first using volumetric concentration
20% HNO3Aqueous solution aoxidizes the N-type silicon containing phosphorus impurities, reuses the HF aqueous solution that volumetric concentration is 3.5% and goes deoxygenation
SiClx.
Crystalline silicon through over-etching operation is transferred in magnetron sputtering room by step S3, as substrate, i.e., hot to 165 DEG C；
It is 2.5 × 10 in vacuum degree using pure aluminum as target-3Pa, target temperature are 225 DEG C, and sputtering current is the condition of 13A
Under, with 175g/cm3Air inflow be filled with the gaseous mixture of boron hydrogen alkane and argon gas, until the pressure in magnetron sputtering room is stablized 5 × 10-3Pa applies back bias voltage 135V to substrate, sputters 13min, obtain the B-Al compound antireflective coating with a thickness of 45nm；Wherein, boron
The mixed proportion of hydrogen alkane and argon gas are as follows: 7.5%/92.5%.
Embodiment 4
A kind of coating process of crystal silicon solar energy battery sputters single layer B-Al compound using on crystalline silicon substrates surface
Antireflective coating；The sputtering method of single layer B-Al compound antireflective coating, comprising the following steps:
Step S1 carries out prerinse to crystalline silicon substrates surface, specifically: it is clear using addition 740 type liquid of RBS IND
The ultrasonic wave of lotion medium is cleaned, ultrasonic frequency 150kHz, and temperature is 55 DEG C, power density 0.7W/cm2；
Step S2 will perform etching operation by prewashed surface of crystalline silicon, specifically: be first using volumetric concentration
25% HNO3Aqueous solution aoxidizes the N-type silicon containing phosphorus impurities, reuses the HF aqueous solution that volumetric concentration is 4.5% and goes deoxygenation
SiClx.
Crystalline silicon through over-etching operation is transferred in magnetron sputtering room by step S3, as substrate, i.e., hot to 170 DEG C；
It is 4 × 10 in vacuum degree using pure aluminum as target-3Pa, target temperature are 240 DEG C, under conditions of sputtering current is 13A,
With 185g/cm3Air inflow be filled with the gaseous mixture of boron hydrogen alkane and inert gas, until the pressure in magnetron sputtering room stablize 8 ×
10-3Pa applies back bias voltage 140V to substrate, sputters 14min, obtain the B-Al compound antireflective coating with a thickness of 65nm；Wherein,
The mixed proportion of boron hydrogen alkane and xenon are as follows: 9%/91%.
Experimental example 1
To the electricity of crystal silicon solar made from the coating process using 1~embodiment of embodiment, 4 crystal silicon solar energy battery
Pond is labeled as 1~sample of sample 4, tests the performance of 1~sample of sample 4, test result is as shown in table 1.
The performance test results of crystal silicon solar energy battery made from table 1
As a result: using the open circuit of the crystal silicon solar energy battery of the coating process of Examples 1 to 4 crystal silicon solar energy battery
Voltage is 0.58V~0.62V, short circuit current 1.8mA/cm2~1.92mA/cm2, it is seen that light transmittance be 89.4%~
90.6%, the transfer efficiency of solar battery is 17.9%~18.4%.
Conclusion: it is novel using the plated film type of crystal silicon solar energy battery made from the application coating process, it is effectively improved
The photoelectric conversion efficiency of crystal silicon solar energy battery.
These are only the preferred embodiment of the present invention, is not intended to restrict the invention, for those skilled in the art
For member, the invention may be variously modified and varied.All within the spirits and principles of the present invention, it is made it is any modification,
Equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (9)
1. a kind of coating process of crystal silicon solar energy battery, which is characterized in that sputter monolayer of boron aluminium on crystalline silicon substrates surface
Compound antireflective coating；The sputtering method of the single layer B-Al compound antireflective coating, comprising the following steps:
Step S1 carries out prerinse to crystalline silicon substrates surface；
Step S2 will perform etching operation by prewashed surface of crystalline silicon；
Crystalline silicon through over-etching operation is transferred in magnetron sputtering room by step S3, as substrate, using pure aluminum as target
Material is 10 in vacuum degree-4Pa~5 × 10-3Pa, target temperature are 200 DEG C~250 DEG C, and sputtering current is the condition of 12A~14A
Under, with 150g/cm3~200g/cm3Air inflow be filled with the gaseous mixture of boron hydrogen alkane and inert gas, until the pressure in magnetron sputtering room
Power is stablized 10-2Pa~10-3Pa applies back bias voltage 120V~150V to substrate, sputters 10min~15min, obtain boron calorize
Close object antireflective coating.
2. the coating process of crystal silicon solar energy battery according to claim 1, which is characterized in that described in step S1
Prerinse specifically: cleaned using the ultrasonic wave of addition cleansing medium, ultrasonic frequency is 50kHz~200kHz, temperature
It is 40 DEG C~60 DEG C, power density 0.1W/cm2~0.8W/cm2。
3. the coating process of crystal silicon solar energy battery according to claim 2, which is characterized in that the cleansing medium
Are as follows: any one of RBS25 type, 740 type liquid ceanser of RBS35 type, 940 type of RBS IND or RBS IND.
4. the coating process of crystal silicon solar energy battery according to claim 1, which is characterized in that described in step S2
Etching operation specifically: the HNO for the use of volumetric concentration being first 10%~30%3Aqueous solution aoxidizes surface of crystalline silicon, reuses
The HF aqueous solution that volumetric concentration is 2%~5% removes silicon.
5. the coating process of crystal silicon solar energy battery according to claim 4, which is characterized in that the crystalline silicon are as follows:
N-type silicon containing phosphorus impurities.
6. the coating process of crystal silicon solar energy battery according to claim 1, which is characterized in that described in step S3
The heating temperature of substrate are as follows: 150 DEG C~180 DEG C.
7. the coating process of crystal silicon solar energy battery according to claim 1, which is characterized in that described in step S3
The mixed proportion of boron hydrogen alkane and inert gas are as follows: 5%/95%~10%/90%.
8. the coating process of crystal silicon solar energy battery according to claim 7, which is characterized in that the inert gas packet
It includes: any one of argon gas, xenon.
9. the coating process of crystal silicon solar energy battery according to claim 1, which is characterized in that described in step S3
The thickness of B-Al compound antireflective coating are as follows: 20nm~70nm.
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