CN106972103B - The method for preparing PEDOT:PSS/Si heterojunction solar battery - Google Patents
The method for preparing PEDOT:PSS/Si heterojunction solar battery Download PDFInfo
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- 229920000144 PEDOT:PSS Polymers 0.000 title claims abstract description 139
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000000137 annealing Methods 0.000 claims abstract description 122
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 102
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 102
- 239000010703 silicon Substances 0.000 claims abstract description 102
- 238000004528 spin coating Methods 0.000 claims abstract description 41
- 239000004094 surface-active agent Substances 0.000 claims abstract description 41
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 claims abstract description 38
- 229910000024 caesium carbonate Inorganic materials 0.000 claims abstract description 38
- 238000002360 preparation method Methods 0.000 claims abstract description 31
- 239000013504 Triton X-100 Substances 0.000 claims abstract description 20
- 229920004890 Triton X-100 Polymers 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 19
- 230000015572 biosynthetic process Effects 0.000 claims abstract 3
- 239000003292 glue Substances 0.000 claims abstract 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 3
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims description 3
- 229960002796 polystyrene sulfonate Drugs 0.000 claims description 2
- 239000011970 polystyrene sulfonate Substances 0.000 claims description 2
- 239000013543 active substance Substances 0.000 claims 1
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 17
- -1 alkene sulfonate Chemical class 0.000 description 17
- 229920006389 polyphenyl polymer Polymers 0.000 description 17
- 238000005086 pumping Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 230000001976 improved effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Manufacturing & Machinery (AREA)
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- Electromagnetism (AREA)
- Hybrid Cells (AREA)
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Abstract
一种制备PEDOT:PSS/Si异质结太阳电池的方法，在PEDOT:PSS溶液中掺入Triton X‑100表面活性剂，掺杂的Triton X‑100表面活性剂的质量分数为0.75％‑2％，纯度为98％；将得到的PEDOT:PSS溶液涂覆在硅片表面，放入真空器皿中抽气，使真空室内的气压达到1‑100Pa，保持该气压3min，以去除PEDOT:PSS溶液中的气泡；取出涂覆有PEDOT:PSS溶液的硅片，用匀胶机旋涂PEDOT:PSS溶液成膜，旋涂时间60s，转速6000rpm；成膜后将硅片置于热板上进行退火处理，退火时间3‑30min，退火温度80‑200℃；在硅片的背面旋涂碳酸铯溶液，成膜后将硅片再次置于热板上退火，退火时间15min，退火温度150℃；退火后，采用热蒸发设备在PEDOT:PSS膜上面蒸金属Ag栅线，在碳酸铯的膜上面蒸全Al背电极；在制备过程中控制密闭的制备环境的湿度为15‑40％。
A method for preparing a PEDOT:PSS/Si heterojunction solar cell, the PEDOT:PSS solution is doped with Triton X-100 surfactant, and the mass fraction of the doped Triton X-100 surfactant is 0.75%-2 %, the purity is 98%; the obtained PEDOT:PSS solution is coated on the surface of the silicon wafer, put into a vacuum vessel and pumped to make the air pressure in the vacuum chamber reach 1-100Pa, and the air pressure is maintained for 3min to remove the PEDOT:PSS solution air bubbles in the film; take out the silicon wafer coated with the PEDOT:PSS solution, spin the PEDOT:PSS solution with a glue spinner to form a film, spin coating time 60s, and rotate at 6000rpm; after film formation, place the silicon wafer on a hot plate for annealing Treatment, annealing time 3-30min, annealing temperature 80-200 ℃; spin-coat cesium carbonate solution on the back of the silicon wafer, after film formation, place the silicon wafer on the hot plate again for annealing, annealing time 15min, annealing temperature 150 ℃; annealing Then, use thermal evaporation equipment to evaporate metal Ag grid lines on the PEDOT:PSS film, and evaporate all Al back electrodes on the cesium carbonate film; during the preparation process, control the humidity of the closed preparation environment to be 15-40%.
Description
Technical field
The present invention relates to a kind of preparation methods of PEDOT:PSS/Si heterojunction solar battery.
Background technique
Poly- (3,4- ethylenedioxy thiophene): poly styrene sulfonate/silicon (PEDOT:PSS/Si) heterojunction solar battery is
A kind of novel solar cell.The advantages such as simple, low temperature low power consuming, process costs are low with preparation process, thus PEDOT:PSS/
The research of Si heterojunction solar battery has obtained extensive concern and quickly development, and in the short several years, transformation efficiency
Huge promotion is obtained.Although efficiency is improved, it is PEDOT:PSS/Si different that battery open circuit voltage is still lower
One of the main problem of matter connection solar cell.
The main surfactant (0.1%-0.5%) using lower quality score carries out PEDOT:PSS solution at present
Doping, spin coating PEDOT:PSS solution form a film in silicon chip surface.It after spin-coating film, is directly made annealing treatment, then is made on hot plate
Standby positive and negative electrode.Its main problem be do not recognize surfactant content be improve effective minority carrier life time it is main because
Element, part Experiment use higher surface-active contents, do not control effectively experiment damp condition but, do not exist to infiltration
The PEDOT:PSS solution of silicon wafer carries out reduced pressure treatment because without obtaining good effect.
Such as Q.Liu, M.Ono, Z.Tang, R.Ishikawa, K.Ueno, and H.Shirai, " Highly
efficient crystalline silicon/Zonyl fluorosurfactant-treated organic
heterojunction solar cells,"Applied Physics Letters,vol.100,p.183901,
2012.J.P.Thomas and K.T.Leung,"Defect-Minimized PEDOT:PSS/Planar-Si Solar
Cell with Very High Efficiency,"Advanced Functional Materials,vol.24,pp.4978-
4985,Aug 20 2014.M.Yameen,S.K.Srivastava,P.Singh,K.Turan,P.Prathap,Vandana,et
al.,"Low temperature fabrication of PEDOT:PSS/micro-textured silicon-based
heterojunction solar cells,"Journal of Materials Science,vol.50,pp.8046-8056,
Dec 2015. etc.
Above-mentioned process can not obtain high effective minority carrier life time, and then hardly result in high battery open circuit voltage, lead to
Chang Youxiao minority carrier life time is in 50-100 μ s, and the open-circuit voltage of solar cell is in 580-600mV.
Summary of the invention
The purpose of the present invention is overcome existing PEDOT:PSS/Si heterojunction solar battery preparation process open-circuit voltage low
Disadvantage, a kind of method for proposing new preparation high open circuit voltage PEDOT:PSS/Si heterojunction solar battery.
The present invention prepare PEDOT:PSS/Si heterojunction solar battery process the following steps are included:
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 0.75%-2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 1-100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3-30min, annealing
80-200 DEG C of temperature；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 15-40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
The present invention improves the work function of PEDOT:PSS film, work content using the surfactant of doping high quality score
Several increases can improve effective minority carrier life time of silicon wafer, and the raising of effective minority carrier life time then can effectively improve solar cell
Open-circuit voltage.
Compared with the prior art, the advantages of the present invention are as follows: one, by the surface for adulterating 0.75%-2% high quality score
Activating agent makes open-circuit voltage 610mV of solar cell or so；Two, by second step to the processing of film under low vacuum environment,
Bubble in removal solution further increases the sun to obtain quality of forming film more preferably film in subsequent spin coating process
The open-circuit voltage of battery, reaches 620mV or so；Three, pass through the annealing process of PEDOT:PSS film and the humidity ring of preparation
Border, to ensure to obtain high open-circuit voltage.
Detailed description of the invention
Effective minority carrier life time schematic diagram that Fig. 1 present invention process obtains；
The basic structure schematic diagram of Fig. 2 PEDOT:PSS/Si heterojunction solar battery；
Fig. 3 annealing conditions are in 200 DEG C of effective minority carrier life time schematic diagrames of annealing 30min；
Fig. 4 damp condition is the effective minority carrier life time schematic diagram of preparation process 40%；
Fig. 5 demarcates the AFM surface potential curve of golden sample；
Fig. 6 present invention process condition PEDOT:PSS surface potential curve；
Surface potential curve of Fig. 7 annealing conditions in 200 DEG C of annealing 30min；
Fig. 8 damp condition surface potential curve at 40%.
Specific embodiment
The present invention is further illustrated below in conjunction with the drawings and specific embodiments.
The step of preparation method of the present invention, is as follows:
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 0.75%-2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 1-100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3-30min, annealing
80-200 DEG C of temperature；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 15-40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Fig. 2 is the battery structure of PEDOT:PSS/Si heterojunction solar battery, structure Ag-PEDOT:PSS-Si-
Cs2CO3-Al。
The present invention using highly doped mass fraction surfactant to the pattern of the improved effect of PEDOT:PSS film forming with
And the surface work function of film forming, and then the effect that PEDOT:PSS is passivated silicon chip surface is improved, finally improve preparation
The open-circuit voltage of PEDOT:PSS/Si heterojunction solar battery.PEDOT:PSS solution by uniform fold in silicon chip surface carries out
It is vacuum-treated the bubble removed in solution, to obtain quality of forming film more preferably film in subsequent spin coating process, further
Improve the open-circuit voltage of solar cell.And in preparation process influence solar batteries technique and environmental factor into
Row control, to ensure the acquisition of the higher open-circuit voltage of solar cell.Due to the surface potential and gold of undoped PEDOT:PSS
It is close, from the comparison of Fig. 5 and Fig. 6 it is found that the present invention can obtain higher surface potential, from shown in Fig. 1 seeing as surface
The increase of potential improves effective minority carrier life time.
Embodiment 1
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 0.75%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 30min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 2
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 30min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 3
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 1.2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 30min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 4
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 1Pa, keeps air pressure 3min, to remove the bubble in PEDOT:PSS solution；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 30min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 5
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 0.8%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min to remove the gas in PEDOT:PSS solution
Bubble,；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 30min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 6
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 20Pa, keeps air pressure 3min, to remove the bubble in PEDOT:PSS solution；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 30min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 7
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 1.5%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 30min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Fig. 3 is effective minority carrier life time figure under 7 technique of embodiment, and Fig. 7 is the surface potential figure of 7 process film of embodiment.
As shown in Figure 3 and Figure 7, under 7 process conditions of embodiment, the technique for being compared to optimal experiment parameter, due to surface work function
It reduces (5.2eV) and results in effective minority carrier life time decline (150 μ s), solar batteries reduce.
Embodiment 8
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 9
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 10min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 10
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3min, annealing temperature
80 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 11
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 1.5%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 12
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 1.5%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3min, annealing temperature
150 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 13
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3min, annealing temperature
150 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 15% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 14
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3min, annealing temperature
150 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 25% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 15
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 1.5%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3min, annealing temperature
180 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Fig. 4 is effective minority carrier life time figure of 15 technique of embodiment, and Fig. 8 is the surface potential of film under 15 technique of embodiment
Figure.It can be seen that work function is declined (5.5eV) in the technique of the optimal experiment parameter of the technics comparing, and then cause effectively
Minority carrier life time declines (280 μ s), and battery open circuit voltage reduces.
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| CN108183150B (en) * | 2017-12-29 | 2020-07-24 | 江苏悦阳光伏科技有限公司 | A kind of heterojunction photovoltaic cell and preparation method thereof |
| CN108565341B (en) * | 2018-05-04 | 2021-07-16 | 宝德照明集团有限公司 | A kind of silicon heterojunction solar cell and preparation method thereof |
| CN111092035B (en) * | 2019-12-25 | 2022-05-24 | 西安奕斯伟材料科技有限公司 | System for be used for chemical passivation |
| CN111574735B (en) * | 2020-06-16 | 2022-04-19 | 南昌航空大学 | Polyvinylidene fluoride-based poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonate composite film and preparation and application thereof |
| CN114392362A (en) * | 2022-01-28 | 2022-04-26 | 电子科技大学 | A kind of smear type low impedance electrocardiographic electrode material and preparation and use method thereof |
| CN115275023A (en) * | 2022-06-17 | 2022-11-01 | 华北电力大学 | Method for improving performance of silicon-based hybrid solar cell by water treatment of PEDOT (Polytetrafluoroethylene-styrene) PSS (Polytetrafluoroethylene-styrene) film |
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