CN106972075B - multi-layer graphene photoelectric sensor - Google Patents
multi-layer graphene photoelectric sensor Download PDFInfo
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- CN106972075B CN106972075B CN201710184440.0A CN201710184440A CN106972075B CN 106972075 B CN106972075 B CN 106972075B CN 201710184440 A CN201710184440 A CN 201710184440A CN 106972075 B CN106972075 B CN 106972075B
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 140
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 135
- IWTIUUVUEKAHRM-UHFFFAOYSA-N germanium tin Chemical compound [Ge].[Sn] IWTIUUVUEKAHRM-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000002096 quantum dot Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 238000005286 illumination Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 111
- 150000001336 alkenes Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
The present invention discloses a kind of multi-layer graphene photoelectric sensor, tin germanium layer and germanium silicide layer are alternately respectively formed between graphene layer, due to the electric conductivity of graphene layer, the carrier generated in tin germanium layer and germanium silicide layer is conducted by graphene to metal electrode immediately, and the tin germanium layer and germanium silicide layer being arranged alternately can produce built in field through illumination in the structure, the collection of carrier is further speeded up, in addition multilayered structure can more make full use of the light being irradiated to, so that the sensitivity of sensor is greatly improved.
Description
Technical field
The present invention relates to a kind of sensors, and in particular to a kind of multi-layer graphene photoelectric sensor.
Background technique
Photoelectric sensor is the sensor using photoelectric device as conversion element.It, which can be used for detecting, directly causes light quantity to become
The non-electrical physical quantity of change, such as light intensity, illuminance, radiation temperature measurement, gas composition analysis；Can also be used to detection can be converted into light quantity
Other non electrical quantities of variation, such as diameter of part, surface roughness, strain, displacement, vibration, speed, acceleration and object
Shape, identification of working condition etc..Photoelectric sensor has the characteristics that non-contact, response is fast, reliable performance, thus industry from
Dynamic makeup is set to be widely applied in robot.New photoelectric device continues to bring out, for further applying for photoelectric sensor
New page is started.
Graphene is a kind of honeycomb flat film formed by carbon atom, is a kind of standard of only one atomic layer level thickness
Two-dimensional material does monoatomic layer graphite so being called.Its thickness is about 0.335nm, is deposited according to the difference of preparation method
It is the basic knot of all carbon crystals in addition to diamond usually in height about 1nm of vertical direction or so in different fluctuatings
Structure unit.Graphene most potential application at present is the substitute as silicon, ultra micro transistor npn npn is manufactured, for producing future
Supercomputer.Replace silicon with graphene, the speed of service of computer processor will be hundreds times fast.In addition, graphene is several
It is fully transparent, the light of absorption 2.3%.On the other hand, it is very fine and close, even the smallest gas molecule can not yet
It penetrates.These features make it be highly suitable as the raw material of transparent electron product.
The application of graphene on the photosensor at present has been widely studied, but there is no complete for potentiality therein
It excavates, therefore the photoelectric sensor based on graphene, there are also very for the photoelectric sensor especially combined with other materials
Big development space, in the photoelectric transfer of various structures or structure and combination of materials that the field must find and find there are also number of values
Sensor.
Summary of the invention
The present invention provides a kind of new structural based on multi-layer graphene photoelectric sensor, it can speed up the receipts of carrier
Collection, makes full use of the light being irradiated to, so that the sensitivity of sensor is greatly improved.
The technical scheme adopted by the invention is that: a kind of multi-layer graphene photoelectric sensor is, characterized by comprising: base
Plate, the substrate are insulative substrate；Multiple graphene layers, the multiple graphene layer are divided into multiple odd-level graphenes and more
A even level graphene, wherein it is formed with tin germanium layer between the even level graphene and next layer of odd-level graphene,
Germanium silicide layer is formed between the even level graphene and upper one layer of odd-level graphene；The multiple odd-level graphene
Position project overlapping in vertical direction, the also projection overlapping in vertical direction of the position of the multiple even level graphene,
The odd-level graphene and even level graphene are staggered in the horizontal direction, and the tin germanium layer and the germanium silicide
Layer is only formed on intervening portion；Noninterlace position part difference in the odd-level graphene and the even level graphene
Form metal electrode.
Further, an odd-level graphene, the tin germanium layer on the odd-level graphene, on the tin germanium layer
Even level graphene and the even level graphene on germanium silicide layer as a cycle unit, the period of the periodic unit
Number is 5-50.
Further, the thickness range of the tin germanium layer is 20-150nm, and the thickness range of the germanium silicide layer is 30-
120nm。
Further, the number of plies of the graphene layer is 1-5 layers.
Further, the surface of the graphene layer is also formed with silicon quantum dot or carbon quantum dot.
Further, the substrate is flexible substrate.
Further, the graphene layer can also be the graphene of nitrogen, phosphorus or arsenic doping.
Further, the metal material of the metal electrode is selected from llowing group of materials: silver, copper, palladium, zinc, platinum or gold.
The beneficial effects of the present invention are: the present invention provides a kind of novel photoelectric sensor based on graphene,
It alternately is respectively formed tin germanium layer and germanium silicide layer between graphene layer, due to the electric conductivity of graphene layer, so that tin germanium layer
The tin germanium that can be conducted by graphene to metal electrode with the carrier generated in germanium silicide layer, and be arranged alternately immediately
Layer and germanium silicide layer can produce built in field through illumination in the structure, further speed up the collection of carrier, in addition more
Layer structure can more make full use of the light being irradiated to, so that the sensitivity of sensor is greatly improved.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of multi-layer graphene photoelectric sensor of the present invention；Fig. 2 is the knot of one embodiment of the invention
Structure schematic diagram；Fig. 3 is the structural schematic diagram of another embodiment of the present invention.
Specific embodiment
Invention is further described in detail below in conjunction with the accompanying drawings and the specific embodiments.
It should be noted that in order to clearly embody specific structure, although each layer is point in figure in the accompanying drawings
From, but this is used for the purpose of more intuitively showing the relationship between each layer, and those skilled in the art understand that the present invention
Final state.
Referring to Fig. 1, the present invention provides a kind of multi-layer graphene photoelectric sensor 10, includes: substrate 1, the substrate are exhausted
Edge substrate；Multiple graphene layers, the multiple graphene layer are divided into multiple odd-level graphenes 2 and multiple even level graphenes
3, wherein being formed with tin germanium layer 4, the even level between the even level graphene 3 and next layer of odd-level graphene 2
Germanium silicide layer 5 is formed between graphene 3 and upper one layer of odd-level graphene 2；The position of the multiple odd-level graphene 2
Projection overlapping in vertical direction, the also projection overlapping in vertical direction of the position of the multiple even level graphene 3, the surprise
Several layers of graphene 2 and even level graphene 3 are staggered in the horizontal direction, and the tin germanium layer 4 and the germanium silicide layer 5
Only formed on intervening portion；Noninterlace position part difference in the odd-level graphene 2 and the even level graphene 3
Metal electrode 6 is formed, i.e., multiple odd-level graphenes 2 do not form the place of tin germanium layer 4 or germanium silicide layer 6 for connecting a gold medal
Belong to electrode 6, similarly multiple even level graphenes 3 are also connected to metal electrode 6, tin germanium layer in the place for not forming functional layer
Or germanium silicide layer is deposited by mask means, and graphene layer can then be prepared on copper-based bottom in advance and be completed, and then be shifted
On to corresponding layer.
One odd-level graphene 2, the tin germanium layer 4 on the odd-level graphene, the even number on the tin germanium layer 4
Germanium silicide layer 6 on layer graphene 3 and the even level graphene 3 is used as a cycle unit, the periodicity of the periodic unit
For 5-50, the multi-layer graphene photoelectric sensor that the periodicity of periodic unit is 5 is shown in Fig. 1.
The thickness range of the tin germanium layer is 20-150nm, and the thickness range of the germanium silicide layer is 30-120nm, is led to
Cross specific experiment discovery, the thickness of tin germanium layer or germanium silicide layer cannot it is too thick can not be too thin, photoelectricity when too thin turns
It is extremely low to change rate, and it is too thick when, the present invention used in photoelectric sensor relative to single germanium silicide or tin germanium photoelectric sensing
There is no special advantages for device.
The number of plies of the graphene layer is 1-5 layers, and the thickness of graphene layer has preferable efficiency when being maintained at 1-5 layers, this
It may be 1-5 layers of graphene carrier conduction efficiency highest.
The surface of the graphene layer is also formed with silicon quantum dot or carbon quantum dot, is compared by experiment using silicon quantum
Efficiency can be increased whether the addition of point or carbon quantum dot, finally found that addition silicon quantum dot or carbon quantum dot can be further
The efficiency of photoelectric sensor is promoted, this is the possible reason is silicon quantum dot or the energy level of carbon quantum dot broadening gathering convenient for carrier
Collection, to improve collection efficiency.
The substrate is flexible substrate, and flexible substrate includes PET substrate or PI substrate can by using flexible substrate
Keep the scope of application of multi-layer graphene photoelectric sensor of the invention wider, and combines the flexibility of graphene that can make the present invention
Photoelectric sensor become flexible sensor.
The graphene layer can also be the graphene of nitrogen, phosphorus or arsenic doping.
Embodiment 1: referring to fig. 2, the present embodiment provides a kind of multi-layer graphene photoelectric sensors, include: substrate, the base
Plate is insulative substrate, selects PET substrate；Multiple nitrogen-doped graphene layers, the multiple graphene layer are divided into multiple odd-levels
Nitrogen-doped graphene 21 and multiple even level graphenes 31, wherein the even level nitrogen-doped graphene 31 and next layer of odd number
Tin germanium layer 4, the even level nitrogen-doped graphene 31 and upper one layer of odd-level are formed between layer nitrogen-doped graphene 21
Germanium silicide layer 5 is formed between nitrogen-doped graphene 21；One odd-level nitrogen-doped graphene 21, the odd-level N doping
Tin germanium layer 4 on graphene 21, the even level nitrogen-doped graphene 31 on the tin germanium layer 4 and the even level N doping graphite
Germanium silicide layer 5 on alkene 31 is used as a cycle unit, and the periodicity of the periodic unit is 10.
The tin germanium layer 4 with a thickness of 20nm, the germanium silicide layer 5 with a thickness of 30nm.
The number of plies of the graphene layer is single-layer graphene, and the surface of the graphene layer is also formed with silicon quantum dot (figure
In be not shown).
Embodiment 2: referring to Fig. 3, the present embodiment provides a kind of multi-layer graphene photoelectric sensors, include: the multiple stone
Black alkene layer is divided into multiple odd-level graphenes 2 and multiple even level graphenes 3, wherein the even level graphene 3 and next layer
Odd-level graphene 2 between be formed with tin germanium layer 4, the even level graphene 3 and upper one layer of odd-level graphene 2 it
Between be formed with germanium silicide layer 5；The position of the multiple odd-level graphene 2 projects overlapping, the multiple idol in vertical direction
The also projection overlapping in vertical direction of the position of several layers of graphene 3, the odd-level graphene 2 and even level graphene 3 are in water
It square is staggered upwards, and the tin germanium layer 4 and the germanium silicide layer 5 are only formed on intervening portion；One surprise
Several layers of graphene 2, the tin germanium layer 4 on the odd-level graphene, even level graphene 3 and the even number on the tin germanium layer 4
Germanium silicide layer 6 on layer graphene 3 is used as a cycle unit, and the periodicity of the periodic unit is 8.
The tin germanium layer 4 with a thickness of 150nm, the germanium silicide layer 5 with a thickness of 120nm.
The number of plies of the graphene layer is 5 layers, and the surface of the graphene layer is also formed with carbon quantum dot and (does not show in figure
Out).
The substrate 1 is flexible substrate, and selection uses PI substrate.
The graphene layer is selected as the graphene of phosphorus doping, and phosphorus doping graphene can be by preparing graphite in PECVD
Phosphorus source is introduced when alkene to being doped, be also possible to preparation complete to carry out under phosphorus atmosphere after graphene corona treatment from
And it is doped.
The metal material of the metal electrode is selected from llowing group of materials: silver, copper, palladium, zinc, platinum or gold.
The present invention provides a kind of novel photoelectric sensors based on graphene, replace shape respectively between graphene layer
Cheng Xihua germanium layer and germanium silicide layer, due to the electric conductivity of graphene layer, so that the current-carrying generated in tin germanium layer and germanium silicide layer
Son can be conducted by graphene to metal electrode immediately, and the tin germanium layer and germanium silicide layer that are arranged alternately can through illumination
Built in field is produced in the structure, has further speeded up the collection of carrier, and in addition multilayered structure can more make full use of irradiation
The light arrived, so that the sensitivity of sensor is greatly improved.
Described in attached drawing positional relationship for only for illustration, should not be understood as the limitation to this patent, show
So, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be to reality of the invention
Apply the restriction of mode.For those of ordinary skill in the art, it can also make on the basis of the above description other
Various forms of variations or variation.There is no necessity and possibility to exhaust all the enbodiments.It is all in spirit of the invention
With any modifications, equivalent replacements, and improvements made within principle etc., the protection scope of the claims in the present invention should be included in
Within.
Claims (6)
1. a kind of multi-layer graphene photoelectric sensor is, characterized by comprising: substrate, the substrate are insulative substrate；It is more
A graphene layer, the multiple graphene layer is divided into multiple odd-level graphenes and multiple even level graphenes, wherein the idol
Be formed with tin germanium layer between several layers of graphene and next layer of odd-level graphene, the even level graphene with upper one layer
Germanium silicide layer is formed between odd-level graphene；The position of the multiple odd-level graphene projects weight in vertical direction
Folded, also projection is overlapped in vertical direction for the position of the multiple even level graphene, the odd-level graphene and even level
Graphene is staggered in the horizontal direction, and the tin germanium layer and the germanium silicide layer are only formed on intervening portion；Institute
The noninterlace position part stated in odd-level graphene and the even level graphene is respectively formed metal electrode；The graphene
The surface of layer is also formed with silicon quantum dot or carbon quantum dot；The substrate is flexible substrate.
2. multi-layer graphene photoelectric sensor as described in claim 1, which is characterized in that an odd-level graphene,
Tin germanium layer on the odd-level graphene, the even level graphene on the tin germanium layer and the silication on the even level graphene
Germanium layer is 5-50 as a cycle unit, the periodicity of the periodic unit.
3. multi-layer graphene photoelectric sensor as claimed in claim 2, which is characterized in that the thickness range of the tin germanium layer
For 20-150nm, the thickness range of the germanium silicide layer is 30-120nm.
4. multi-layer graphene photoelectric sensor as claimed in claim 3, which is characterized in that the number of plies of the graphene layer is 1-
5 layers.
5. multi-layer graphene photoelectric sensor as described in claim 1, which is characterized in that the graphene layer can also be
The graphene that nitrogen, phosphorus or arsenic are adulterated.
6. multi-layer graphene photoelectric sensor as described in claim 1, which is characterized in that the metal material of the metal electrode
Selected from llowing group of materials: silver, copper, palladium, zinc, platinum or gold.
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| CN107748192A (en) * | 2017-10-12 | 2018-03-02 | 黄晓敏 | A kind of multi-layer graphene gas sensor |
| CN111180546B (en) * | 2019-12-30 | 2021-07-13 | 浙江大学 | Multilayer monocrystalline silicon nano-film/graphene photoelectric detector and preparation method thereof |
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| CN105489652A (en) * | 2014-09-19 | 2016-04-13 | 中国科学院微电子研究所 | Semiconductor device and method for manufacturing the same |
| CN206574730U (en) * | 2017-03-24 | 2017-10-20 | 山东鸿荣电子有限公司 | multi-layer graphene photoelectric sensor |
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| CN105489652A (en) * | 2014-09-19 | 2016-04-13 | 中国科学院微电子研究所 | Semiconductor device and method for manufacturing the same |
| CN206574730U (en) * | 2017-03-24 | 2017-10-20 | 山东鸿荣电子有限公司 | multi-layer graphene photoelectric sensor |
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| Effect of graphene on photoluminescence properties of grapheneGeSi quantum dot hybrid structures;YL Chen et al;《Applied Physics Letter》;20140615;全文 * |
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