CN106960650A - 自由形式显示器 - Google Patents

自由形式显示器 Download PDF

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Publication number
CN106960650A
CN106960650A CN201610972012.XA CN201610972012A CN106960650A CN 106960650 A CN106960650 A CN 106960650A CN 201610972012 A CN201610972012 A CN 201610972012A CN 106960650 A CN106960650 A CN 106960650A
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Prior art keywords
pixel
free form
opening
form display
light blocking
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朴赞洙
李世应
柳昇锡
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LG Display Co Ltd
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LG Display Co Ltd
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Priority to CN202210881170.XA priority Critical patent/CN115188275A/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
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    • G02—OPTICS
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    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G09G2300/0465—Improved aperture ratio, e.g. by size reduction of the pixel circuit, e.g. for improving the pixel density or the maximum displayable luminance or brightness

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Abstract

本发明涉及一种使得自由形式部上的台阶状图案较不可见的自由形式显示器。该自由形式显示器具有有源区和边框区，并且有源区与边框区之间的边界的至少一部分具有自由形式部。自由形式部包括子像素电极和阻光部。多个子像素电极布置在由彼此交叉的多个栅极线和多个数据线限定的区中。阻光部具有分别使子像素电极露出的开口，并且布置成交叠栅极线和数据线。有源区包括布置有子像素电极的像素区，以及没有布置子像素电极的非像素区。阻光部的相邻于非像素区的开口被制成具有不同尺寸。

Description

自由形式显示器
本申请按照35U.S.C.§119(a)要求2015年10月30日提交的韩国专利申请第10-2015-0151794号的优先权权益，其全部内容通过引用并入本文中，就好像在本文中完全阐述一样。
技术领域
本发明涉及显示器及其制造方法，并且更具体地，涉及一种自由形式显示器。
背景技术
随着信息社会的发展，对于用于显示图像的显示装置的各种需求在上升。在显示装置的领域中，轻薄并且可以覆盖大面积的平板显示器(FPD)已经快速取代大体积的阴极射线管(CRT)。例如，已经开发并且使用各种平板显示器，包括液晶显示器(LCD)、等离子体显示面板(PDP)、有机发光显示器(OLED)、场发射显示装置(FED)、电泳显示器(ED)等。
然而，已经开发出的这些平板显示器用于大屏幕，具有用于显示图像的矩形显示面板，并且因此不适合用于具有特定形状或自由形式形状的显示器。例如，矩形显示器通常不适合用于具有各种形状如圆形、椭圆形、或斜形的壁钟、腕表、以及仪表盘的显示器。为了跟上消费者需求，近年来已经在开发诸如圆形显示器、椭圆形显示器、或斜形显示器的自由形式显示器。
参照图1和图2，将描述根据相关技术的矩形显示器以及具有与该矩形显示器相同像素布置的圆形显示器。
图1是示意性地示出了相关技术的矩形显示器的一些区的结构的顶部平面图。图2是示出了具有相关技术的像素布置的圆形显示器的边缘结构的顶部平面图。
参照图1，相关技术的显示装置包括以矩阵形式布置在矩形基板SUB上的矩形单元像素P，每个单元像素P包括多个子像素SP。为了生成红色、绿色、以及蓝色的原色以实现全色，单元像素P可以包括红色子像素(R)、绿色子像素(G)、以及蓝色子像素(B)。
对于圆形显示器、椭圆形显示器、或斜形显示器，其外框为圆形、椭圆形、或斜形。如图2中所示，具有圆形、椭圆形、或斜形外框的自由形式显示器使用与相关技术的矩形显示器相同的像素结构。
参照图2，圆形显示器具有圆的、盘形基板SUB。矩形单元像素P以矩阵形式布置在盘形基板SUB上。然而，该矩形单元像素P沿基板的圆形边缘布置成台阶形状。即，在数据显示区的最外面的像素P与基板SUB的外框之间没有布置像素，这导致没有图像显示的死区。由于这样的死区，黑矩阵BM的台阶式外框可能对用户而言是可见的。
因此，需要开发出其中由例如死区造成的台阶状图案对于用户来说较不可见而具有高显示质量的自由形式显示器。
发明内容
因此，本发明涉及自由形式显示器及其驱动方法，所述自由形式显示器及其驱动方法显著地解决了由于相关技术的限制和缺点导致的一个或更多个问题。
本发明的优点为提供一种具有较不可见台阶状图案的自由形式显示器。
本发明的另外的特征和优点将被阐述于下面的描述中，并且从以下的描述中本发明的另外的特征和优点部分地是明显的，或者可以从本发明的实践中获知本发明的另外的特征和优点。通过在书面描述及其权利要求以及附图中所具体指出的结构可以实现和得到本发明的这些和其他的目的和优点。
为了根据本发明的目的实现这些和其他优点，如实施和广泛描述的，具有有源区和边框区、有源区与边框区之间的边界的至少一部分具有自由形式部的自由形式显示器，该自由形式显示器包括在由彼此交叉的多个栅极线和多个数据线限定的区中的多个子像素电极；以及阻光部，其具有使多个子像素电极露出的开口，并且布置成交叠多个栅极线和多个数据线，其中有源区包括设置有子像素电极的子像素区，以及没有设置子像素电极的非像素区，并且其中阻光部的相邻于非像素区的开口被制成具有不同尺寸。
随着非像素区的最外侧与像素区的最外侧之间的最短距离减小，黑矩阵的相邻于非显示区的开口尺寸变小。
阻光部中的相邻于非像素区的开口在尺寸上成比例改变。
阻光部中的相邻于非像素区的开口在尺寸上根据伽马特性成比例改变。
子像素电极构成产生全色的包括预定数量的子像素电极的单个单元像素电极，并且对于每个单元像素电极，开口具有相同尺寸。
自由形式部包括圆形形状、椭圆形形状、弯曲形状、以及斜形形状中的至少之一。
根据本发明一个示例性实施方案的本发明的自由形式显示器，由于阻光部的相邻于非像素区的开口被制得具有不同尺寸并且尺寸成比例地改变，所以阻光部上的台阶状线可以被制得较不可见。
应当理解的是，前述概述的描述和以下详细的描述是示例性和解释性的，其目的是对如要求保护的本发明提供进一步的解释。
附图说明
本申请包括附图以提供本发明的进一步理解，附图并入并构成该申请的一部分，附图示出了本发明的实施方案并且与描述一起用于说明本发明的原理。在附图中：
图1是示意性地示出了相关技术的矩形显示器的一些区的结构的顶部平面图；
图2是示出了具有相关技术的像素布置的圆形显示器的边缘结构的顶部平面图；
图3是示意性地示出了根据本发明的示例性实施方案的自由形式显示器的顶部平面图；
图4是示出了图3的区域R1的放大的顶部平面图；
图5A是示出了图4的像素电极的顶部平面图；
图5B是示出了图4的黑矩阵的顶部平面图；
图6是示出了根据本发明的示例性实施方案的自由形式显示器的伽马特性曲线的图；
图7A是示出了当开口率随着像素区与非像素区之间的距离线性变化时黑矩阵的设计的视图；
图7B是示出了当应用伽马特性曲线时黑矩阵的设计的视图；
图8A是概念性地示出了在相关技术的自由形式显示器上黑矩阵的边界线可见的视图；以及
图8B是概念性地示出了一个示例性实施方案的自由形式显示器上黑矩阵的边界线较不可见的视图。
具体实施方式
下文中，将参照附图详细描述本发明的示例性实施方案。遍及说明书，相同的附图标记基本上指代相同的部件。在描述本发明时，当认为已知功能或构造的详细描述可能不必要地模糊本发明的主题时，将省略该详细描述。
下文中，将参照图3至图5B描述根据本发明的示例性实施方案的自由形式显示器。
图3是示意性地示出根据本发明的一个示例性实施方案的自由形式显示器和自由形式部的顶部平面图。图4是示出了图3的区域R1的放大的顶部平面图。图5A是示出了图4的像素电极的顶部平面图。图5B是示出了图4的黑矩阵的顶部平面图。
参照图3至图5B，根据本发明的一个示例性实施方案的自由形式显示器DP包括有源区AA和边框区BA。
在本发明的示例性实施方案中，通过示例的方式，有源区AA与边框区BA之间的边界的一部分包括斜形自由形式部，但本发明不限于此。例如，本发明适用于包括例如至少为圆形、椭圆形、弯曲的或斜形的自由形式部的自由形式显示器。
有源区AA是数据显示区，其包括布置有像素的像素区PA和没有布置像素的非像素区NPA。
可以在边框区BA、非像素区NPA、以及像素区PA中布置阻光部。阻光部具有使布置在像素区中的像素露出的开口。虽然将描述作为阻光部的一个示例的黑矩阵，但是本发明的阻光部不限于此，并且其可以是任何物体，只要其具有使显示装置的像素露出的开口即可。
像素区PA包括通过黑矩阵BM的开口BO11至BO63而露出的子像素区。在子像素区中布置有子像素电极P11至P63。预定数量的子像素电极构成单个单元像素电极。例如，R(红色)、G(绿色)、以及B(蓝色)的三个子像素电极可以形成可以实现全色彩的单个单元像素电极。即，第一子像素电极P11至P13可以构成第一单元像素电极P1，第二子像素电极P21至P23可以构成第二单元像素电极P2，第三子像素电极P31至P33可以构成第三单元像素电极P3，第四子像素电极P41至P43可以构成第四单元像素电极P4，第五子像素电极P51至P53可以构成第五单元像素电极P5，并且第六子像素电极P61至P63可以构成第六单元像素电极P6。
非像素区NPA是在像素区PA与边框区BA之间的区。非像素区NPA是在显示装置具有圆形部、椭圆形部、弯曲部、或斜形部的情况下无法布置单元像素电极的区。
本发明的黑矩阵BM布置成包围子像素电极P11至P63，使得黑矩阵BM覆盖非像素区NPA并且使得子像素电极P11至P63彼此隔开。
参照图4至图5B，子像素电极P11至P63布置在由在第一方向上(例如，如附图中水平地)布置的栅极线GL和在垂直于第一方向的第二方向上(例如，如附图中垂直地)布置的数据线DL限定的区中。子像素电极P11至P63的尺寸相同。
黑矩阵BM包括使子像素电极P11至P63中的每个的至少一部分露出的多个开口BO11至BO63。另外，黑矩阵BM布置成覆盖栅极线GL和数据线DL。通过黑矩阵BM的开口BO11至BO63，光被发射至对应于像素区的子像素电极P11至P63的部分，由此数据被显示。
黑矩阵BM的开口BO11至BO63在一些区中尺寸相同而在其他区中尺寸不同。例如，像素区PA中的开口BO11至BO63被构造成如果其以与非像素区NPA隔开特定距离而进一步布置在像素区PA内部则使子像素电极的100％露出(即，具有使全部子像素电极露出的开口率)，并且像素区PA中的开口BO11至BO63可以构造成如果其位于相邻于非像素区NPA则使至少子像素电极P11至P63中的仅一部分露出。黑矩阵BM的开口率可以通过考虑黑矩阵BM的开口的位置以及其距非像素区的距离来如在附图中水平地或垂直地调整。
图5B示出了像素区PA中的黑矩阵BM的相邻于非像素区的开口BO11至BO63，即对应于单元像素电极的开口BO11至BO63。
如图5B中所示，随着非像素区NPA的最外侧与像素区PA的最外侧之间的最短距离减小，黑矩阵BM的相邻于非像素区NPA的开口BO11至BO63的尺寸变小。
例如，对应于位于区域R1顶部处的单元像素电极的开口BO11至BO13的第一宽度a1和第二宽度a2分别与对应于位于区域R1底部处的单元像素电极的开口BO61至BO63的第一宽度f1和第二宽度f2不同。
具体地，如果对应于布置在区域R1的对应于自由形式部的顶行(下文中，“第一行”)中的单元像素电极的开口BO11至BO13构造成具有第(1-1)宽度a1和第(1-2)宽度a2，则对应于布置在区域R1的第二行中的单元像素电极的开口BO31至BO33构造成具有小于第(1-1)宽度a1和第(1-2)宽度a2的第(2-1)宽度b1和第(2-2)宽度b2。
另外，如果对应于布置在区域R1的第三行中的单元像素电极的开口BO31至BO33构造成具有第(3-1)宽度c1和第(3-2)宽度c2，则对应于布置在区域R1的第四行中的单元像素电极的开口BO41至BO43构造成具有小于第(3-1)宽度c1和第(3-2)宽度c2的第(4-1)宽度d1和第(4-2)宽度d2。
以此方式，相比于布置在下部中的单元像素电极的开口，对应于布置在上部中的单元像素电极的开口在尺寸上被制得较小。
此外，黑矩阵BM的相邻于非像素区NPA的开口BO11至BO63在尺寸上可以成比例减小。
以此方式，如果黑矩阵BM的开口位于相邻于非像素区NPA，则由于黑矩阵BM的开口被制成具有不同尺寸并且尺寸成比例地变化，所以黑矩阵BM上的台阶状线可以制得较不可见。
虽然已经关于仅如附图中垂直地调整黑矩阵的开口的尺寸描述了上述示例性实施方案，但是开口的尺寸也可以如附图中水平地调整。以此方式，水平地、垂直地、或斜线地形成的台阶状图案可以被制得较不可见。
图6是示出了根据本发明的示例性实施方案的自由形式显示器的伽马特性曲线的图。
如图6中所示，由于透光率不总是与灰度成线性比例，所以有利地考虑该非线性。在根据本发明的示例性实施方案的自由形式显示器中，可以考虑该非线性(线性)来调整自由形式部中的黑矩阵的开口的开口率(即，尺寸)。
接下来，将参照图7A和图7B描述通过考虑线性和非线性来设置黑矩阵的开口的开口率的示例。
图7A是示出了当开口率相对于像素区与非像素区之间的距离而线性改变时黑矩阵的开口率的设计的视图。图7B是示出了当应用伽马特性曲线时黑矩阵的开口率的设计的视图。
参照图7A，如果布置在像素区PA中的黑矩阵BM的开口位于相邻于非像素区NPA，则布置在像素区PA中的黑矩阵BM的开口的尺寸线性变化。即，从非像素区NPA与边框区BA之间的边界至黑矩阵BM的位于像素区PA中的同一垂直线上的开口的距离越长，黑矩阵BM的开口的开口率就越高。例如，当开口在位置①时开口率可以为12.6％，当开口在位置②时开口率可以为25.2％，当开口在位置③时开口率可以为37.6％，当开口在位置④时开口率可以为50.0％，当开口在位置⑤时开口率可以为62.8％，当开口在位置⑥时开口率可以为75.6％，当开口在位置⑦时开口率可以为88.2％，并且在下一位置处为100％。
参照图7B，如果布置在像素区PA中的黑矩阵BM的开口位于相邻于非像素区NPA，则布置在像素区PA中的黑矩阵BM的开口的尺寸沿伽马特性曲线非线性变化。即，黑矩阵BM的开口的开口率沿伽马特性曲线非线性变化。例如，当开口位于位置①时开口率可以是2.2％，当开口位于位置②时开口率可以是6.8％，当开口位于位置③时开口率可以是14.2％，当开口位于位置④时开口率可以是24.7％，当开口位于位置⑤时开口率可以为38.5％，当开口位于位置⑥时开口率可以为55.5％，当开口位于位置⑦时开口率可以为76.2％，并且在下一位置处为100％。
接下来，将参照图8A和图8B来描述从根据本发明的一个示例性实施方案的自由形式显示器中获得的一些益处。
图8A是概念性示出黑矩阵的边界线在相关技术的自由形式显示器上可见的视图。图8B是概念性示出黑矩阵的边界线在本发明的自由形式显示器上较不可见的视图。
参照图8A，由于在有源区AA的非像素区NPA中没有布置像素电极，所以在相关技术的自由形式显示器的情况下，当显示装置工作时，像素区PA与非像素区NPA之间的边界清晰可见。
参照图8B，可以看出，通过使对应于像素区的黑矩阵的位于相邻于有源区AA的非像素区NPA的开口水平地或垂直地放大或缩小，黑矩阵的边界线变得较不清晰可见。
根据本发明的示例性实施方案的自由形式显示器可以适用于使用黑矩阵或具有用于调整像素开口面积的开口调整部的各种平板显示器，包括液晶显示器(LCD)、等离子体显示面板(PDP)、有机发光显示器(OLED)、场发射显示装置(FED)、电致发光显示器(ED)等。
通过该说明，本领域技术人员应理解，在不脱离本发明的技术原理的情况下可以进行各种变型和修改。因此，本发明的技术范围不限于本说明书中的具体描述，但应受到所附权利要求的范围的限定。

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1.一种自由形式显示器，所述自由形式显示器具有有源区和边框区，所述有源区与所述边框区之间的边界的至少一部分具有自由形式部，所述自由形式显示器包括：
在由彼此交叉的多个栅极线和多个数据线限定的区中的多个子像素电极；以及
阻光部，所述阻光部具有使所述多个子像素电极露出的开口，并且所述阻光部布置成交叠所述多条栅极线和所述多条数据线，
其中所述有源区包括设置有所述子像素电极的子像素区和没有设置子像素电极的非像素区，以及
其中所述阻光部的相邻于所述非像素区的开口被制成具有不同尺寸。
2.根据权利要求1所述的自由形式显示器，其中随着所述非像素区的最外侧与所述子像素区的最外侧之间的最短距离减小，所述阻光部的相邻于所述非像素区的所述开口的尺寸变小。
3.根据权利要求2所述的自由形式显示器，其中所述阻光部的相邻于所述非像素区的所述开口在尺寸上成比例变化。
4.根据权利要求2所述的自由形式显示器，其中所述阻光部的相邻于所述非像素区的所述开口在尺寸上根据伽马特性成比例变化。
5.根据权利要求2所述的自由形式显示器，其中多个单元像素中的每一个包括用于产生全色的预定数量的子像素电极，以及其中对于每个单元像素，所述开口具有相同尺寸。
6.根据权利要求1所述的自由形式显示器，其中所述自由形式显示部具有圆形形状、椭圆形形状、弯曲形状、以及斜形形状中的至少之一。
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