CN106958011B - Dynamic controls the control device and control method of sputtering target material utilization rate - Google Patents
Dynamic controls the control device and control method of sputtering target material utilization rate Download PDFInfo
- Publication number
- CN106958011B CN106958011B CN201710346133.8A CN201710346133A CN106958011B CN 106958011 B CN106958011 B CN 106958011B CN 201710346133 A CN201710346133 A CN 201710346133A CN 106958011 B CN106958011 B CN 106958011B
- Authority
- CN
- China
- Prior art keywords
- sputtering target
- target material
- magnetic
- unit
- control unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to magnetron sputtering fields, and provide the control device and control method of a kind of dynamic control sputtering target material utilization rate.Control device includes: sputtering target material Shape measure unit；Control unit；The detection information of wireless communication unit, sputtering target material Shape measure unit is transmitted to external system through control unit and wireless communication unit；Magnetic sensor, it detects resultant magnetic field locating for sputtering target material, the resultant magnetic field that is connected to control unit and will test through control unit and wireless communication unit real-time delivery to external system, and the analysis and processing result of external system returns to control unit through wireless communication unit；Magnetic material controller, it is connected to control unit, control instruction is sent to magnetic material controller according to the analysis and processing result from external system by control unit, thus the magnetic field strength of magnetic material controller control magnetic material and the finally magnetic field strength of control resultant magnetic field.According to the present invention it is possible to understand in real time and improve target utilization.
Description
Technical field
The present invention relates to magnetron sputtering fields, more particularly to a kind of control of dynamic control sputtering target material utilization rate
Device and control method.
Background technique
Currently in magnetron sputtering field, the utilization rate of planar targets only has 20%-45%, and the utilization rate of rotary target material only has
30%-50%, to cause the very big wasting of resources.Moreover, the device and method of detection target utilization are in target at present
It is carried out after material use by using weighing, with ruler and calliper to measure deepest point or with 3D scanning target pattern.
These methods all cannot achieve On-line sampling system, both waste the time in this way, also can not dynamically control target utilization.
It is then desired to a kind of control device and control method of following dynamic control sputtering target material utilization rates: it can be with
Some or all of solve or at least mitigate in the presence of the above-mentioned prior art disadvantage.
Summary of the invention
Technical problem to be solved by the present invention lies in: provide one kind aim to solve the problem that or at least mitigate it is above-mentioned in the prior art
The control device and control method of the dynamic control sputtering target material utilization rate of some or all of existing disadvantage.
The technical solution adopted in the present invention is as described below.
According to an aspect of the present invention, a kind of control device of dynamic control sputtering target material utilization rate is provided, wherein described
Control device includes:
Sputtering target material Shape measure unit, the etching table of the sputtering target material Shape measure unit real-time detection sputtering target material
Face pattern；
Control unit, described control unit is connected to the sputtering target material Shape measure unit and receives splashes from described
It shoots at the target the testing result of material Shape measure unit；
Wireless communication unit, the wireless communication unit, which is connected to, detects knot described in described control unit and real-time reception
Fruit, the wireless communication unit are connected to external system and are divided the testing result real-time delivery to the external system
Analysis processing；
Magnetic sensor, the first magnetic field of the magnetic sensor detection sputtering equipment and the table for adjusting the sputtering target material
The resultant magnetic field that second magnetic field of the magnetic material of face magnetic field strength is formed, the magnetic sensor are connected to described control unit
And the resultant magnetic field that will test through described control unit and the wireless communication unit real-time delivery to the external system with
It is analyzed and processed, the analysis and processing result of the external system returns to described control unit through the wireless communication unit；
Magnetic material controller, the magnetic material controller are connected to described control unit, described control unit according to
Control instruction is sent to the magnetic material controller by the analysis and processing result from the external system, thus the magnetism
Control of material device controls the second magnetic field strength of the magnetic material and finally controls the magnetic field strength of resultant magnetic field.
Preferably, the magnetic material is set to the inside, described of the outer surface of the sputtering target material, the sputtering target material
The non-soldering face of backboard/penstock of the soldering layer or the sputtering target material of sputtering target material, the magnetic material be selected from solder,
Spacing body or additive, the distributed areas point of the magnetic material include one or more subregions, and the control device includes one
Or multiple magnetic sensors and one or more magnetic material controller, the resultant magnetic field of each subregion is correspondingly
Second magnetic field of the magnetic material of detection and each subregion is carried out correspondingly by one by a magnetic sensor
The magnetic material controller control.
Preferably, the external system is control host, cloud, hand-held detection unit or the wearable inspection of sputtering equipment
Unit is surveyed, the external system is analyzed and processed using big data, and the analysis and processing result of the external system forms correspondence
Model, the corresponding model return to described control unit through the wireless communication unit, and described control unit is according to the correspondence
Corresponding control instruction is sent to the magnetic material controller by model, and the wireless communication unit utilizes loT communication association
View is communicated.
Preferably, the target Shape measure unit is set to the outer surface of the sputtering target material, the sputtering target material
The non-soldering face of backboard/penstock of the soldering layer or the sputtering target material of internal, the described sputtering target material, the sputtering equipment
The inside of reaction chamber or the outside of the reaction chamber, the magnetic sensor and the magnetic material controller are set to institute
State the outer surface of sputtering target material, the inside of the sputtering target material, the soldering layer of the sputtering target material or the sputtering target material
The non-soldering face of backboard/penstock.
It is highly preferred that the magnetic sensor subregion distribution and subregion detection resultant magnetic field.
Preferably, the control device further includes weight sensor, sputtering target described in the weight sensor real-time detection
The current weight of material, described control unit are connected to the weight sensor and receive the letter from the weight sensor
Number, the signal from the weight sensor is through described control unit and the wireless communication unit real-time delivery to the outside
System is analyzed and processed, and the external system acquires sputtering target material utilization rate using following formula: sputtering target material utilization rate=
Sputtering target material current weight/sputtering target material initial weight X100%, obtained sputtering target material utilization rate is through the wireless telecommunications
Unit returns to described control unit.
Preferably, the weight sensor is set to the outer surface of the sputtering target material, the inside of the sputtering target material, institute
It states on the non-soldering face of backboard/penstock of the soldering layer or the sputtering target material of sputtering target material.
It is highly preferred that the weight sensor detects the current weight of the sputtering target material according to area distribution and subregion
Amount.
Preferably, the control device further includes battery and generator unit, and the battery connects and supplies electricity to the weight
Sensor, the sputtering target material Shape measure unit, the wireless communication unit and the magnetic material, the generator unit
Connect and supply electricity to the weight sensor, the sputtering target material Shape measure unit, the wireless communication unit, the magnetism
Material and battery.
It is highly preferred that the generator unit is that thermoelectric power generation unit or plasma charge collect converting unit, the heat
Electric generator unit collects the heat generated in target as sputter technique to produce electricl energy, and the plasma charge collects conversion
Unit collects the energy of plasma generated in sputtering technology and energy of plasma is converted into electric energy.
According to another aspect of the present invention, a kind of control method of dynamic control sputtering target material utilization rate, the control are provided
Method processed the following steps are included:
Pass through the etching surface pattern of sputtering target material Shape measure unit real-time detection sputtering target material；
Control unit receives the testing result from the sputtering target material Shape measure unit；
The testing result is simultaneously transmitted to institute by testing result of the wireless communication unit real-time reception from described control unit
External system is stated to be analyzed and processed；
Magnetic sensor detects the first magnetic field of sputtering equipment and adjusts the magnetic of the Surface field intensity of the sputtering target material
The resultant magnetic field in the second magnetic field of property material, and the resultant magnetic field that will test is through described control unit and the wireless telecommunications list
First real-time delivery is to the external system to be analyzed and processed；
The external system will be to the detection knot from the sputtering target material Shape measure unit and the magnetic sensor
The analysis and processing result of fruit returns to described control unit through the wireless communication unit；And
Control instruction is sent to magnetic material according to the analysis and processing result from the external system by described control unit
Controller is expected, so that the magnetic material controller controls the second magnetic field strength of magnetic material and finally controls resultant magnetic field.
Preferably, the control method is further comprising the steps of:
The current weight of sputtering target material described in weight sensor real-time detection；
Described control unit receives the testing result from the weight sensor；
The testing result is simultaneously transmitted to institute by testing result of the wireless communication unit real-time reception from described control unit
External system is stated, the external system acquires sputtering target material utilization rate: sputtering target material utilization rate=sputtering target using following formula
Material current weight/sputtering target material initial weight X100%；And
Obtained sputtering target material utilization rate is returned to the control list through the wireless communication unit by the external system
Member.
One or more embodiment according to the present invention, can be realized beneficial effect as described below.
According to the present invention, control device can dynamically control sputtering target material utilization rate, it is thus possible to improve to the maximum extent
Sputtering target material utilization rate, specifically, using this control device and control method may make utilization ratio of planar targets reach 50% with
On, and rotary target material utilization rate is made to reach 80% or more.
In some embodiments, since external system can calculate in real time according to the current weight that weight sensor measures
Sputtering target material utilization rate out, such user no longer need as in the prior art after sputtering technology completion by sputtering target material
Zai Qing supplier is removed by modes such as weighings to calculate sputtering target material utilization rate, sputtering equipment convenient for users.And
And user can be allowed to understand cost information in real time, such as how many cost reduced, user has been further facilitated to sputtering equipment
It uses.
In other embodiments, control device according to the present invention further includes thermoelectric power generation unit and/or plasma
Volume charge collects converting unit, can use the energy that generates in sputtering technology in this way to produce electricl energy supply battery, again
Quantity sensor and control unit, to avoid energy dissipation.
Detailed description of the invention
It with reference to the accompanying drawings will be to the feature, advantage of invention and the technical of illustrative embodiments and industrial meaning
Justice is described, and in the accompanying drawings, identical appended drawing reference indicates identical element, and wherein:
Fig. 1 shows the control device of the dynamic control sputtering target material utilization rate of illustrative embodiments according to the present invention
Schematic illustration；
Fig. 2 (a), 2 (b) schematically illustrate the magnetic material, magnetic transducing of illustrative embodiments according to the present invention
A kind of set-up mode of device and magnetic material controller；
Fig. 3 (a), 3 (b) schematically illustrate the magnetic material, magnetic transducing of illustrative embodiments according to the present invention
Another set-up mode of device and magnetic material controller；
Fig. 4 shows the control dress of the dynamic control sputtering target material utilization rate of another exemplary embodiment according to the present invention
The schematic illustration set；
Fig. 5 (a), 5 (b), 5 (c), 5 (d), 5 (e) schematically illustrate the weight of illustrative embodiments according to the present invention
Several set-up modes of the quantity sensor in plane sputtering target material.
Specific embodiment
Exemplary embodiment of the invention is described in detail with reference to the accompanying drawings.Description to illustrative embodiments
It merely for the sake of demonstration purpose, and is definitely not to the present invention and its application or the limitation of usage.Moreover, in figure each component size
It is also only schematically, not exactly correspond to actual product with ratio.
Control device to the dynamic control sputtering target material utilization rate for including illustrative embodiments according to the present invention below
It is illustrated with control method.Fig. 1 shows the dynamic control sputtering target material utilization rate of illustrative embodiments according to the present invention
Control device schematic illustration.Fig. 2 (a), 3 (2) schematically illustrate the magnetic of illustrative embodiments according to the present invention
A kind of set-up mode of property material, magnetic sensor and magnetic material controller.Fig. 3 (a), 3 (b) schematically illustrate root
According to another setting side of the magnetic material of exemplary embodiment of the invention, magnetic sensor and magnetic material controller
Formula.Fig. 4 shows the control device of the dynamic control sputtering target material utilization rate of another exemplary embodiment according to the present invention
Schematic illustration.Fig. 5 (a), 5 (b), 5 (c), 5 (d), 5 (e) schematically illustrate illustrative embodiments according to the present invention
Several set-up modes of the weight sensor in plane sputtering target material.
As shown in Figure 1, the dynamic of illustrative embodiments controls the control device of sputtering target material utilization rate according to the present invention
Including sputtering target material Shape measure unit, control unit, wireless communication unit, magnetic sensor, magnetic material controller and
Magnetic material.
Firstly the need of explanation, in sputtering equipment according to the present invention, magnetic field locating for sputtering target material is synthesis magnetic
?.Specifically, the first magnetic field is that sputtering equipment itself has included magnetic field, that is, the magnet of cathode is set and is formed by
Magnetic field；Second magnetic field is that the magnetic material in the present invention is formed by magnetic field.Magnetic field locating for sputtering target material is exactly the first magnetic field
Resultant magnetic field is formed by with the second magnetic field.
Since usually sputtering equipment first included magnetic field after debugging itself would not change again, and sputtering target
The utilization rate of material is again and magnetic field locating for sputtering target material has certain relationship, thus the design of the present inventor is magnetic by increasing
Material influences the first magnetic field to form resultant magnetic field with the first magnetic field, most by the second magnetic field to form the second magnetic field
The corrosion rate namely sputtering target material of sputtering target material are influenced using the intensity distribution of resultant magnetic field locating for sputtering target material eventually
Utilization rate.
Sputtering target material Shape measure unit according to the present invention can be with the etching surface pattern of real-time detection sputtering target material, example
It such as can be with the surplus of the etching deepest point of real-time detection sputtering target material, to obtain the real-time corrosion information of sputtering target material.It splashes
Material Shape measure unit of shooting at the target can for example be set to the weldering of the outer surface of sputtering target material, the inside of sputtering target material, sputtering target material
Close the non-soldering face of backboard/penstock of layer or the sputtering target material, the inside of the reaction chamber of sputtering equipment or reaction chamber
It is external.Magnetic material can be set the outer surface in sputtering target material, the inside of sputtering target material, sputtering target material soldering layer or splash
It shoots at the target the non-soldering face of backboard/penstock of material, magnetic material can be selected from solder, spacer or additive, as long as can be real
Existing above-mentioned function.The present invention is suitable for integral type sputtering target material and welding type sputtering target material, and integral type sputtering target material includes
Integral type planar targets and integrated rotating target, welding type sputtering target material include welding type planar targets and welding type rotary target
Material.For example, welding type planar targets include target plate, backboard and the weldering by target plate together with backboard soldering
Close layer, welding type rotary target material includes target tube body, is coaxially set in penstock in target tube body and by target tube body and back
The soldering layer of pipe soldering together.
Sputtering target material Shape measure unit is connected to control unit, and control unit is received by sputtering target material Shape measure unit
The real-time corrosion information of the sputtering target material detected.Control unit is connected to wireless communication unit again, can be to wireless telecommunications list
Member transmission information can also receive information from wireless communication unit.Wireless communication unit is additionally coupled to external system and can be with
Information is sent to external system, also can receive the information from external system.External system for example can be sputtering equipment
Host, cloud, hand-held detection unit or wearable detection unit are controlled, external system has analysis processing function, and
Analysis and processing result can be returned again to wireless communication unit.That is, in this illustrative embodiments, from sputtering
The testing result of target Shape measure unit is analyzed through control unit and wireless communication unit real-time delivery to external system
Processing.
Magnetic sensor detects the distribution situation of resultant magnetic field locating for sputtering target material, and it is single that magnetic sensor is connected to control
Member and the resultant magnetic field that will test are through control unit and wireless communication unit real-time delivery to external system to carry out at analysis
Reason, the analysis and processing result of external system return to control unit through wireless communication unit.Magnetic sensor can be for example set to
The outer surface of sputtering target material, the inside of sputtering target material, the soldering layer of sputtering target material or the sputtering target material backboard/penstock
Non- soldering face.
Control instruction is sent to control unit and is connected by control unit according to the analysis and processing result from external system
Magnetic material controller.Magnetic material controller controls the second magnetic field strength of magnetic material simultaneously after receiving control instruction
Resultant magnetic field is finally controlled and adjusts, so that sputtering target material can be etched uniformly, to improve the utilization rate of sputtering target material.Reason
The resultant magnetic field thought should be uniformly distributed within the scope of entire target material surface, thus it is an object of the invention to improve target as far as possible
Magnetic field homogeneity in surface range everywhere.For example, outer if the corrosion rate at some position of sputtering target material is slower
The current shape at the position of the current resultant magnetic field and sputtering target material at the position that portion's system is detected according to magnetic sensor
Looks information sends the information for needing to improve resultant magnetic field intensity at this position to control unit, control unit according to this information again
It sends control instruction and gives magnetic material controller, to make magnetic material controller control the resultant magnetic field intensity at this position and to make
The resultant magnetic field intensity increases.Certainly, magnetic sensor can such as subregion distribution and subregion detection resultant magnetic field point
Cloth situation；Magnetic material can also be with subregion distribution and by the control of magnetic material controller subregion.Specifically, magnetic material
Such as dividing N number of subregion, then control device may include N number of magnetic sensor and N number of magnetic material controller, and each subregion is corresponding
Ground detect by a magnetic sensor and correspondingly be controlled by a magnetic material controller.For example, the conjunction of the first subregion
It is detected at magnetic field by the first magnetic sensor, the second magnetic field of the magnetic material of the first subregion is by the first magnetic material controller control
System.Similar with magnetic sensor, magnetic material controller can also for example be set to the outer surface of sputtering target material, sputtering target material
The non-soldering face of backboard/penstock of internal, sputtering target material soldering layer or the sputtering target material, as long as it is above-mentioned that its may be implemented
Function.
Fig. 2 (a), 2 (b) schematically illustrate the magnetic material, magnetic transducing of illustrative embodiments according to the present invention
The set-up mode of device and magnetic material controller.For example, showing the top view of welding type planar targets, Fig. 2 in Fig. 2 (a)
(b) layering shows the schematic side view of welding type planar targets in, wherein it is clear in order to show, by soldering layer 3 and magnetism
Layer where sensor 4, magnetic material and magnetic material controller 5 amplifies.Welding type planar targets include that target is flat
Plate 1, backboard 2 and the soldering layer 3 by target plate 1 together with 2 soldering of backboard.Magnetic sensor 4, magnetic material and magnetic
Property control of material device 5 be arranged between soldering layer 3 and target plate 1.Fig. 3 (a), 3 (b) schematically illustrate according to the present invention
Another set-up mode of the magnetic materials of illustrative embodiments, magnetic sensor and magnetic material controller.Wherein, scheme
The longitudinal sectional view of welding type rotary target material is shown in 3 (a), layering shows the side view of welding type rotary target material in Fig. 3 (b)
Schematic diagram, wherein it is clear in order to show, by magnetic sensor 4, magnetic material and magnetic material controller 5 and waterproof protective layer
Layer where 6 amplifies.Welding type rotary target material includes target plate 1, penstock 2 ' and by target plate 1 and penstock 2 '
The soldering layer of soldering together.Magnetic sensor 4, magnetic material and magnetic material controller 5, waterproof protective layer 6 are successively set
It sets in the inside of penstock 2 '.
Since the control device of the illustrative embodiments can dynamically control sputtering target material utilization rate, it is thus possible to maximum
Improve to limit sputtering target material utilization rate.Utilization ratio of planar targets may make to reach 50% using this control device and control method
More than, and rotary target material utilization rate is made to reach 80% or more.
Fig. 4 is the control device of the dynamic control sputtering target material utilization rate of another exemplary embodiment according to the present invention
Schematic illustration.Only focusing between illustrative embodiments shown in description and above-mentioned Fig. 1 in the illustrative embodiments not
Same place, for details are not described herein with illustrative embodiments something in common shown in above-mentioned Fig. 1.
The control device of Fig. 4 further includes the weight sensor of the current weight of real-time detection sputtering target material.Weight sensor
It is connected to control unit.The signal of related sputtering target material current weight of the control unit reception from weight sensor.The signal
It is analyzed and processed again through wireless communication unit real-time delivery to external system, external system acquires sputtering target using following formula
Material utilization rate: sputtering target material utilization rate=sputtering target material current weight/sputtering target material initial weight X100%, obtained sputtering
Target utilization returns again to control unit through wireless communication unit.
The weldering of the outer surface in sputtering target material, the inside of sputtering target material, sputtering target material for example can be set in weight sensor
Close the non-soldering face of backboard/penstock of layer or the sputtering target material.Similar with magnetic sensor, weight sensor is according to region
It is distributed the current weight of simultaneously subregion detection sputtering target material.
As shown in Fig. 5 (a), 5 (b), 5 (c), 5 (d), 5 (e), the weight in plane sputtering target material is given by way of example
Several set-up modes of quantity sensor.For example, showing one of weight sensor in welding type planar targets in Fig. 5 (a)
Kind set-up mode, wherein target plate 1 is together with backboard 2 is by 3 soldering of soldering layer, and weight sensor 7 is arranged in target
Between plate 1 and soldering layer 3.Another setting side of the weight sensor in welding type planar targets is shown in Fig. 5 (b)
Formula, wherein target plate 1 and backboard 2 are by together with 3 soldering of soldering layer, and weight sensor 7 is arranged in backboard 2 and weldering
Close the opposite side of layer 3.Another set-up mode of weight sensor in welding type planar targets is shown in Fig. 5 (c),
Wherein, target plate 1 is together with backboard 2 is by 3 soldering of soldering layer, and a side of backboard 2 is arranged in weight sensor 7
On.Weight sensor is all illustrated in Fig. 5 (d), 5 (e) in one of integral type planar targets set-up mode, wherein weight
Quantity sensor 7 is arranged on one of side of target 12.
Control device advantageous effects obtained in addition to that can obtain Fig. 1, the control device of Fig. 2 can also obtain
Following advantageous effects: since the current weight that external system can be measured according to weight sensor calculates sputtering target in real time
Material utilization rate, such user no longer need as in the prior art removing sputtering target material again after sputtering technology completion
Please supplier by modes such as weighings calculate sputtering target material utilization rate, sputtering equipment convenient for users.Moreover, for
For family, sputtering target material utilization rate means cost, and sputtering target material utilization rate is higher, and cost is lower, and sputtering target material utilization rate is got over
Low, cost is higher.Thus, sputtering target material utilization rate is grasped in real time, user can be allowed to understand cost information in real time, such as reduce
How many costs have further facilitated use of the user to sputtering equipment.
In some preferred embodiments, control device according to the present invention can also include battery.Battery can connect
To weight sensor, sputtering target material Shape measure unit, wireless communication unit and magnetic material, and to weight sensor, splash
Shoot at the target material Shape measure unit, wireless communication unit and magnetic material power supply.
In some more preferable embodiments, control device according to the present invention further includes generator unit, and generator unit can
To be connected to weight sensor, sputtering target material Shape measure unit, wireless communication unit, magnetic material and battery, and to weight
Quantity sensor, sputtering target material Shape measure unit, wireless communication unit and magnetic material power supply, charge the battery.
In some further preferred embodiments, generator unit can be, for example, thermoelectric power generation unit, collect target
The heat generated in sputtering technology is to produce electricl energy supply battery, weight sensor and control unit, to avoid energy
Waste.
In some embodiments still more preferably, control device according to the present invention further includes plasma charge
Converting unit is collected, to collect the energy of plasma generated in sputtering technology and by the power supply battery, again after conversion
Quantity sensor and control unit.
In some embodiments still further preferably, the wireless communication unit of control device according to the present invention is made
Agreement is loT communications protocol, such as NB loT communications protocol, and what is utilized when external system is analyzed and processed is big number
According to analysis and processing result forms corresponding model, and corresponding control instruction is sent to magnetic material according to the correspondence model by control unit
Expect controller.
In the present specification, whenever referring to " illustrative embodiments ", " preferred embodiment ", " embodiment " etc.
When mean for the embodiment description specific feature, structure or feature include at least one embodiment party of the invention
In formula.The appearance of these words different places in the present specification is not necessarily all referring to same embodiment.In addition, appointing when being directed to
When one embodiment/embodiment describes specific feature, structure or feature, it will be understood that those skilled in the art also can be
This feature, structure or feature are realized in other embodiment in all embodiments.
Embodiments of the present invention are described in detail above.However, aspect of the invention is not limited to above embodiment.?
Without departing from the scope of the invention, various remodeling and replacement can be applied in above embodiment.
Claims (10)
1. a kind of control device of dynamic control sputtering target material utilization rate, which is characterized in that the control device includes:
Sputtering target material Shape measure unit, the etching surface shape of the sputtering target material Shape measure unit real-time detection sputtering target material
Looks；
Control unit, described control unit are connected to the sputtering target material Shape measure unit and receive from the sputtering target
The testing result of material Shape measure unit；
Wireless communication unit, the wireless communication unit are connected to testing result described in described control unit and real-time reception,
The wireless communication unit is connected to external system and analyzes the testing result real-time delivery to the external system
Processing；
Magnetic sensor, the first magnetic field of the magnetic sensor detection sputtering equipment and the surface magnetic for adjusting the sputtering target material
The resultant magnetic field that second magnetic field of the magnetic material of field intensity is formed, the magnetic sensor are connected to described control unit and will
The resultant magnetic field detected is through described control unit and the wireless communication unit real-time delivery to the external system to carry out
The analysis and processing result of analysis processing, the external system returns to described control unit through the wireless communication unit；
Magnetic material controller, the magnetic material controller are connected to described control unit, and described control unit is according to coming from
Control instruction is sent to the magnetic material controller by the analysis and processing result of the external system, thus the magnetic material
Controller controls the intensity in the second magnetic field of the magnetic material and finally controls the magnetic field strength of resultant magnetic field.
2. control device according to claim 1, which is characterized in that the magnetic material is set to the sputtering target material
The non-weldering of backboard/penstock of outer surface, the inside of the sputtering target material, the soldering layer of the sputtering target material, the sputtering target material
Conjunction face, the magnetic material are selected from solder, spacer or additive, and the distributed areas point of the magnetic material include one or more
A subregion, the control device include one or more magnetic sensors and one or more magnetic material controls
Device, the resultant magnetic field of each subregion are correspondingly carried out the magnetism of detection and each subregion by a magnetic sensor
Second magnetic field of material is correspondingly controlled by a magnetic material controller.
3. control device according to claim 2, which is characterized in that the external system is the control master of sputtering equipment
Machine, cloud, hand-held detection unit or wearable detection unit, the external system are analyzed and processed using big data,
The analysis and processing result of the external system forms corresponding model, and the corresponding model is through described in wireless communication unit return
Corresponding control instruction is sent to the magnetic material controller according to the corresponding model by control unit, described control unit,
And the wireless communication unit is communicated using loT communications protocol.
4. control device according to claim 3, which is characterized in that the target Shape measure unit is set to described splash
Shoot at the target the outer surface of material, the inside of the sputtering target material, the soldering layer of the sputtering target material, the sputtering target material backboard/back
Non- soldering face, the inside of the reaction chamber of the sputtering equipment or the outside of the reaction chamber of pipe, the magnetic sensor and
The magnetic material controller is set to the outer surface of the sputtering target material, the inside of the sputtering target material, the sputtering target material
Soldering layer or the sputtering target material the non-soldering face of backboard/penstock.
5. control device described in any one of -4 according to claim 1, which is characterized in that the control device further includes weight
Sensor, the current weight of sputtering target material described in the weight sensor real-time detection, described control unit is connected to described heavy
The signal of quantity sensor and reception from the weight sensor, the signal from the weight sensor are single through the control
The first and described wireless communication unit real-time delivery is analyzed and processed to the external system, and the external system utilizes following public affairs
Formula acquires sputtering target material utilization rate: sputtering target material utilization rate=sputtering target material current weight/sputtering target material initial weight X100%,
Obtained sputtering target material utilization rate returns to described control unit through the wireless communication unit.
6. control device according to claim 5, which is characterized in that the weight sensor is set to the sputtering target material
Outer surface, the inside of the sputtering target material, backboard/penstock of the soldering layer of the sputtering target material or the sputtering target material it is non-
On soldering face.
7. control device according to claim 6, which is characterized in that the control device further includes that battery and power generation are single
Member, the battery connect and supply electricity to the weight sensor, the sputtering target material Shape measure unit, the wireless telecommunications list
The first and described magnetic material, the generator unit connect and supply electricity to the weight sensor, sputtering target material pattern inspection
Survey unit, the wireless communication unit, the magnetic material and battery.
8. control device according to claim 7, which is characterized in that the generator unit be thermoelectric power generation unit or wait from
Daughter charge-trapping converting unit, the thermoelectric power generation unit collect the heat generated in target as sputter technique to generate electricity
Can, the plasma charge collects converting unit and collects the energy of plasma generated in sputtering technology and by plasma energy
Amount is converted into electric energy.
9. a kind of control method of dynamic control sputtering target material utilization rate, which is characterized in that the control method includes following step
It is rapid:
Pass through the etching surface pattern of sputtering target material Shape measure unit real-time detection sputtering target material；
Control unit receives the testing result from the sputtering target material Shape measure unit；
The testing result is simultaneously transmitted to external system by testing result of the wireless communication unit real-time reception from described control unit
System is analyzed and processed；
Magnetic sensor detects the first magnetic field of sputtering equipment and adjusts the magnetic material of the Surface field intensity of the sputtering target material
The resultant magnetic field in the second magnetic field of material, and the resultant magnetic field that will test is real through described control unit and the wireless communication unit
When be transmitted to the external system to be analyzed and processed；
The external system will be to the testing result from the sputtering target material Shape measure unit and the magnetic sensor
Analysis and processing result returns to described control unit through the wireless communication unit；And
Control instruction is sent to magnetic material control according to the analysis and processing result from the external system by described control unit
Device processed, so that the magnetic material controller controls the intensity in the second magnetic field of magnetic material and finally controls resultant magnetic field.
10. control method according to claim 9, which is characterized in that the control method is further comprising the steps of:
The current weight of sputtering target material described in weight sensor real-time detection；
Described control unit receives the testing result from the weight sensor；
The testing result is simultaneously transmitted to described outer by testing result of the wireless communication unit real-time reception from described control unit
Portion's system, the external system acquire sputtering target material utilization rate using following formula: sputtering target material utilization rate=sputtering target material is worked as
Preceding weight/sputtering target material initial weight X100%；And
Obtained sputtering target material utilization rate is returned to described control unit through the wireless communication unit by the external system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710346133.8A CN106958011B (en) | 2017-05-17 | 2017-05-17 | Dynamic controls the control device and control method of sputtering target material utilization rate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710346133.8A CN106958011B (en) | 2017-05-17 | 2017-05-17 | Dynamic controls the control device and control method of sputtering target material utilization rate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106958011A CN106958011A (en) | 2017-07-18 |
| CN106958011B true CN106958011B (en) | 2019-02-22 |
Family
ID=59482545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710346133.8A Expired - Fee Related CN106958011B (en) | 2017-05-17 | 2017-05-17 | Dynamic controls the control device and control method of sputtering target material utilization rate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106958011B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10513432B2 (en) * | 2017-07-31 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Anti-stiction process for MEMS device |
| CN114774877A (en) * | 2022-05-10 | 2022-07-22 | 苏州迈为科技股份有限公司 | Sputtering method and sputtering equipment for improving utilization rate of rotary target |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63317671A (en) * | 1987-06-19 | 1988-12-26 | Shinku Kikai Kogyo Kk | Method and device for sputtering |
| TW573041B (en) * | 2002-02-07 | 2004-01-21 | Hannstar Display Corp | Method for improving performance of sputtering target |
| KR20100006483A (en) * | 2008-07-09 | 2010-01-19 | 삼성모바일디스플레이주식회사 | Unit for controlling magnetic field forming and magnetron sputtering apparatus and magnetron sputtering method using the unit |
| CN102102186A (en) * | 2009-12-16 | 2011-06-22 | 财团法人工业技术研究院 | Structure for promoting utilization rate of target |
| KR102083955B1 (en) * | 2010-06-25 | 2020-03-03 | 캐논 아네르바 가부시키가이샤 | Sputtering apparatus, film deposition method, and control device |
| CN101921989A (en) * | 2010-06-30 | 2010-12-22 | 昆山工研院新型平板显示技术中心有限公司 | Method for improving utilization rate of target of sputtering technology |
| CN102465268B (en) * | 2010-11-08 | 2015-01-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron source, magnetron sputtering equipment and magnetron sputtering method |
| CN102181841B (en) * | 2011-05-18 | 2013-04-24 | 应达利电子(深圳)有限公司 | Metal vacuum sputtering device and method |
| CN202246842U (en) * | 2011-07-25 | 2012-05-30 | 深圳天泽镀膜有限公司 | Magnetic control monitoring and managing device for sputtering target consumption |
| CN103422065B (en) * | 2012-05-16 | 2016-08-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | magnetron sputtering apparatus and magnetron control method |
| EP2778253B1 (en) * | 2013-02-26 | 2018-10-24 | Oerlikon Surface Solutions AG, Pfäffikon | Cylindrical evaporation source |
| CN103556122B (en) * | 2013-10-23 | 2017-01-18 | 苏州矩阵光电有限公司 | Self-adaptive magnetic field adjustment type magnetic-controlled sputter coating device and coating method thereof |
| CN204455278U (en) * | 2014-12-26 | 2015-07-08 | 昆山国显光电有限公司 | Magnetic pole sputter equipment |
| CN205133729U (en) * | 2015-11-30 | 2016-04-06 | 昆山工研院新型平板显示技术中心有限公司 | Device in control target magnetic field |
| CN105951052B (en) * | 2016-06-29 | 2018-10-12 | 昆山国显光电有限公司 | Magnetic control sputtering device |
-
2017
- 2017-05-17 CN CN201710346133.8A patent/CN106958011B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN106958011A (en) | 2017-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105740602B (en) | A kind of test electromagnetic signal environment construction method and system | |
| CN103969560B (en) | A kind of visualization ultrasonic wave detecting system for fault detection of local discharge | |
| CN106958011B (en) | Dynamic controls the control device and control method of sputtering target material utilization rate | |
| CN109143218A (en) | A kind of lightning positioning system and lightning positioning method based on VHF radar | |
| CN102706914B (en) | Measurement system and measurement method of secondary electron emission yield of dielectric material | |
| CN103969561A (en) | Visual ultrasonic detection method for partial discharge failure detection | |
| CN103901273B (en) | Power grid harmonic wave detection method and Harmonic Measuring Equipment | |
| CN107656180A (en) | A kind of shelf depreciation intelligence sensor detection method | |
| Whitelonis et al. | Application of near-field to far-field transformation to Doppler features from wind turbine scattering | |
| US20180306846A1 (en) | Non-contact electricity meters | |
| CN109038861B (en) | A kind of wireless power transfer method and system of wireless common source | |
| KR20170078731A (en) | Position sensor, position measuring device and method for the operation thereof | |
| CN109212467A (en) | Deficient standing wave arrival direction estimating method under amplitude phase error based on partial collimation nested array | |
| CN201594110U (en) | System using power frequency sinusoidal voltage for ion source plasma measurement | |
| CN102799333A (en) | Electromagnetic touch device and control method thereof | |
| Béquin et al. | Modeling plasma loudspeakers | |
| CN105548824A (en) | Positioning device and positioning method of partial discharge source of electrical device | |
| CN105203967A (en) | Power battery deterioration degree test method and test device | |
| CN103943449B (en) | The measuring method of a kind of radio frequency cross talk, equipment and system | |
| Bansemer et al. | Monitoring of a dielectric barrier discharge-based process using the gas gap voltage | |
| CN104077431B (en) | One kind is based on dipole array mutual coupling emulation mode | |
| CN207096430U (en) | Harmonic generator for intelligent electric energy meter detection | |
| CN102759666A (en) | Judgment method for far-field radiation limitation of printed circuit board | |
| CN208596201U (en) | A kind of portable supersonic shelf depreciation inspection device | |
| CN209559972U (en) | A kind of high-frequency harmonic measuring device based on fundamental frequency prediction |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190222 Termination date: 20200517 |