CN106953602A - A kind of broadband turns single-ended amplifier - Google Patents
A kind of broadband turns single-ended amplifier Download PDFInfo
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- CN106953602A CN106953602A CN201710176476.4A CN201710176476A CN106953602A CN 106953602 A CN106953602 A CN 106953602A CN 201710176476 A CN201710176476 A CN 201710176476A CN 106953602 A CN106953602 A CN 106953602A
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- nmos tube
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- electric capacity
- amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45031—Indexing scheme relating to differential amplifiers the differential amplifier amplifying transistors are compositions of multiple transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45034—One or more added reactive elements, capacitive or inductive elements, to the amplifying transistors in the differential amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45084—Indexing scheme relating to differential amplifiers the common mode signal circuit comprising one or more inductive or capacitive elements, e.g. filter circuitry
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45156—At least one capacitor being added at the input of a dif amp
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45201—Indexing scheme relating to differential amplifiers the differential amplifier contains one or more reactive elements, i.e. capacitive or inductive elements, in the load
Abstract
A kind of broadband turns single-ended amplifier, overcome the shortcomings of traditional common gate structure amplifier and LC baluns, including input block, chokes unit, filter unit, amplifying unit and balun unit, the positive and negative two ends of differential radio frequency input signal connect the positive input terminal Vin+ and negative input end Vin of input block respectively, the input connection chokes unit of input block, the output end of input block connects the input of filter unit, the output end of filter unit connects the input of amplifying unit, the output end connection balun unit of amplifying unit, balun unit exports single-ended radio frequency output signal；The present invention can be on the basis of broadband character be ensured, the power consumption of step-down amplifier improves gain, isolation and the phase balance of amplifier.
Description
Technical field
The present invention relates to amplifier, and in particular to a kind of broadband turns single-ended amplifier.
Background technology
In all kinds of radio transmitters, the amplifier of radio-frequency front-end is generally single-ended structure, i.e. radiofrequency signal from single-ended
Input enters, sent out from Single-end output end.But the amplifier of single-ended structure is easily influenceed by bonding line, causes gain
Attenuation problem, therefore radio transmitter can be solved the above problems using differential configuration.And the output end connection of emitter is
Single ended antenna, so the radio-frequency front-end of emitter needs a difference and turns single-ended amplifier, and it is desirable that the amplifier has one
Fixed gain, wider bandwidth and preferable phase balance.
Common gate structure amplifier is widely used in the design of broad band amplifier, and main cause is that it has broadband input
With characteristic, traditional common gate structure amplifier circuit is as shown in Figure 1.Signal is inputted by transistor M1, M2 source electrode, by adjusting M1
With M2 breadth length ratio and gate bias voltage, the size of current for flowing through M1 and M2 can be adjusted, and then change M1 and M2 mutual conductance
gm, its input impedance is matched with 50 ohm antennas.By adjusting load resistance R1 and R2 resistance size, difference can be obtained
Voltage gain.The structure has wider input bandwidth and gain bandwidth.But, traditional common gate structure amplifier have with
Lower shortcoming：
First is that power consumption is big, and the input impedance of traditional common gate structure amplifier is approximately 1/ (gm+gmb), wherein gmTo be defeated
Enter transistor transconductance, gmbThe corresponding equivalent transconductance of bulk effect come for input transistors substrate to source potential difference band.For reality
Existing input impedance is matched with 50 ohm antennas, it is necessary to by increasing operating current to improve the mutual conductance of input pipe, make above formula near
Approximately equal to 50 ohm.
Second is that gain is low, and the gain of traditional common gate structure amplifier is heavily dependent on load impedance size,
But big ohmic load can bring excessive pressure drop, reduction voltage remaining and the linearity；And big inductance value load inductance was both added
Chip area can cause circuit that narrowband gain characteristic is presented again.
3rd is that isolation is poor, and because the isolation of traditional common gate structure amplifier is poor, this will cause output end to be believed
Number return to input, it is difficult to meet requirement of the system to isolation index.
On the basis of common gate structure amplifier, typically it can realize that difference turns single using load resistance is substituted for into LC baluns
The function at end, but LC baluns have frequency-selective filtering characteristic, and bandwidth can be caused to narrow, phase balance is deteriorated, LC baluns in addition
Decay it is larger, therefore the difference of the structure turns the poor-performing of single-ended amplifier, is not suitable for before radio transmitter radio frequency
End.
The content of the invention
The purpose of the present invention is that there is provided a kind of low work(to overcome the shortcomings of traditional common gate structure amplifier and LC baluns
Consumption high-gain broadband difference turns single-ended amplifier, can be on the basis of broadband character is ensured, the power consumption of step-down amplifier improves amplification
Gain, isolation and the phase balance of device.
The technical scheme that the present invention takes is as follows：
A kind of Low-power-consumptiohigh-gain high-gain broadband difference turns single-ended amplifier, including input block, chokes unit, filter unit,
Amplifying unit and balun unit, the positive and negative two ends of differential radio frequency input signal connect the positive input terminal Vin+ of input block respectively
And negative input end Vin-, input block input connection chokes unit, input block output end connection filter unit it is defeated
Enter end, the output end of filter unit connects the input of amplifying unit, the output end connection balun unit of amplifying unit, balun list
Member output single-ended radio frequency output signal；Wherein：
Input block includes NMOS tube M1, NMOS tube M2, first, second two resistance, first, second, third, fourth 4
Individual electric capacity, NMOS tube M1 and NMOS tube M2 grid to be connected be all connected with the first biased electrical after first resistor and second resistance respectively
Connection NMOS tube M2 source electrode after pressure, the NMOS tube M1 electric capacity of gate series second, and it is defeated by the 4th electric capacity and differential radio frequency
Enter the negative input end connection of signal, connection NMOS tube M1 source electrode after the NMOS tube M2 electric capacity of gate series first, and pass through the
Three electric capacity are connected with the positive input terminal of differential radio frequency input signal；
Chokes unit includes first, second two inductance, and one end of first, second inductance is connected in input block respectively
NMOS tube M1 and NMOS tube M2 source class, the other end of first, second inductance are grounded.
Further, filter unit includes the five, the 6th two electric capacity and the three, the 4th two inductance, the five, the 6th electricity
One end of appearance connects the drain electrode of the NMOS tube M1 and NMOS tube M2 in input block, the other end point of the five, the 6th electric capacity respectively
NMOS tube M3 that Lian Jie be in amplifying unit and NMOS tube M4 grid level, it is single that one end of the three, the 4th inductance connects input respectively
The drain electrode of NMOS tube M1 and NMOS tube M2 in member, the other end of the three, the 4th inductance connect the NMOS in amplifying unit respectively
Pipe M3 and NMOS tube M4 source class.
Further, amplifying unit include NMOS tube M3, NMOS tube M4, the three, the 4th two resistance, the 7th, the 8th liang
Individual electric capacity, NMOS tube M3 and NMOS tube M4 grid to be connected be all connected with the second biased electrical after 3rd resistor and the 4th resistance respectively
Pressure, NMOS tube M3 and NMOS tube M4 source electrode are respectively through the seven, the 8th capacitance connections to ground.
Further, balun unit includes primary coil LPWith secondary coil LS, primary coil LPOne end connection amplification it is single
The drain electrode of NMOS tube M3 in member, primary coil LPThe other end connection amplifying unit in NMOS tube M4 drain electrode, primary line
Enclose LPCentre cap connection power supply, secondary coil LSOne end connection ground, secondary coil LSThe other end be amplifier output
End, exports single-ended radio frequency signal, primary coil LPWith secondary coil LSBy symmetrical mutually around composition transformer Balun.
Advantages of the present invention and remarkable result：
(1) low-power consumption.In the case where realizing that the matching of 50 ohm input impedances is required, work(can be greatly lowered using the present invention
Operating current, 6.8mA (supply voltage 3.3V) can be reduced to by transistors cross couple and current multiplexing technology by consumption, and
Using traditional common gate structure amplifier, it is necessary to about 13.5mA operating current (supply voltage 3.3V).
(2) high-gain.The operating current of the present invention is relatively low, and uses transformer Balun as the load of amplifier, so that
Excessive pressure drop will not be produced.Cross-coupling technique can improve the equivalent mutual conductance g of metal-oxide-semiconductor simultaneouslymAnd gmb, voltage can also increased
Benefit increase.
(3) high-isolation.The present invention uses current multiplexing technology, equivalent to two-stage amplifying circuit, can greatly improve and put
The isolation of big device, compared to single-stage amplifying circuit, circuit isolation can be improved to 65dB from original 30dB.
(4) the high phase place degree of balance.The present invention realizes that difference turns single-ended function using transformer Balun, and transformer Balun is compared
There is broader bandwidth and more preferable phase balance in LC baluns, transformer Balun is regard as cathode-input amplifier in the present invention
Load, can both obtain wider gain bandwidth and input coupling bandwidth, higher phase balance can also be obtained.
(5) grid difference turns single-ended amplifier to current multiplexing cross-couplings proposed by the present invention altogether, and power consumption can be greatly reduced,
Voltage gain, isolation and phase balance are improved, be can apply in broadband rf front end.
Brief description of the drawings
Fig. 1 is the circuit theory diagrams of traditional common gate structure amplifier；
Fig. 2 is the circuit block diagram that difference of the present invention turns single-ended amplifier；
Fig. 3 is the circuit theory diagrams that difference of the present invention turns single-ended amplifier.
Embodiment
The present invention will be further described below in conjunction with the accompanying drawings：
Such as Fig. 2, the present invention is provided with input block 1, chokes unit 2, filter unit 3, amplifying unit 4 and balun unit 5；
The positive and negative two ends of differential radio frequency input signal connect the positive input terminal Vin+ and negative input end Vin- of input block 1 respectively, input
The input connection chokes unit 2 of unit 1, the output end of input block 1 connects the input of filter unit 3, filter unit 3
Output end connects the input of amplifying unit 4, and the output end connection balun unit of amplifying unit 4, balun unit exports single-ended penetrates
Frequency output signal.
Such as Fig. 3, input block 1 uses common gate structure, and has carried out intersection coupling in the metal-oxide-semiconductor grid and source class of input stage
Close, differential input end realizes 50 ohm input impedances by input block 1.Chokes unit 2 provides DC current path, while right
Input signal carries out chokes；Input block 1 produce signal code by filter unit 3, the amplifying unit 4 through current multiplexing
Amplification, then deliver to balun unit 5, the single-ended radio frequency signal of final output amplification.Wherein：Input block 1 provided with NMOS tube M1,
M2, electric capacity C1, C2, C3, C4 and resistance R1, R2；Chokes unit 2 is provided with inductance L1, L2；Filter unit 3 is provided with electric capacity C5, C6
With inductance L3, L4；Amplifying unit is provided with NMOS tube M3, M4, electric capacity C7, C8 and resistance R3, R4；Balun unit 5 is provided with primary line
Enclose LPWith secondary coil LS；The annexation of circuit is as follows：
The source class of NMOS tube M1, M2 of differential radio frequency Vin+, Vin- signal connection input block 1, while chokes unit 2
Inductance L1, L2 are also connected to the source class of NMOS tube M1, M2 of input block 1.Gate series resistance R1, R2 of NMOS tube M1, M2
After be connected to the source class that M2, M1 are connected respectively to after bias voltage VB1, gate series electric capacity C2, C1 of NMOS tube M1, M2, should
Connected mode connects for cross-couplings.
The drain electrode of NMOS tube M1, M2 connects inductance L3, L4 of filter unit 3 to NMOS tube M3, M4 of amplifying unit 4 respectively
Source class, while NMOS tube M1, M2 drain electrode respectively connection filter unit 3 electric capacity C5, C6 to amplifying unit 4 NMOS tube
M3, M4 grid.The source class of NMOS tube M3, M4 of amplifying unit 4 connects electric capacity C7, C8 to ground, the grid of NMOS tube M3, M4 respectively
Bias voltage VB2 is connected to after series resistance R3, R4 of pole.The drain electrode of NMOS tube M3, M4 of amplifying unit 4 connects balun list respectively
The primary coil L of member 5PTwo ends, primary coil LPCentre cap connection supply voltage VDD, secondary coil LSOne end connection
Ground, secondary coil LSThe other end be amplifier output end, export single-ended radio frequency signal, primary coil LPWith secondary coil LS
By symmetrical mutually around composition transformer Balun.
Differential radio frequency input signal is inputted by input block 1, and for the amplifying circuit of common gate structure, its input impedance is about
For 1/ (gm+gmb), herein, gmFor the mutual conductance of common gate transistor, gmbFor common gate transistor substrate B to source S potential difference
The equivalent transconductance brought.
The present embodiment is after input has carried out gate series electric capacity C2, C1 of cross-couplings connection, i.e. NMOS tube M1, M2
M2, M1 source class are connected respectively, and the connected mode connects for cross-couplings.Now, NMOS tube in input block 1 is corresponding etc.
Imitate gmAnd gmbIncrease as 2gmAnd 2gmb.This connected mode causes lower power consumption half.Simultaneously as employing current multiplexing skill
Art, in the case where keeping power consumption constant so that the amplified unit 4 of signal code amplifies again.In summary, compared to tradition
Common gate structure amplifier completes 50 ohm of input matchings, and the power consumption that this patent needs is original 1/2nd.I.e. in identical electricity
Under the voltage of source, operating current is reduced to 1/2nd of traditional common gate structure amplifier.Meanwhile, cross-couplings connected mode and electricity
Stream multiplexing technology can improve the gain of amplifier.
The drain electrode of NMOS tube M1, M2 connects inductance L3, L4 of filter unit 3 to NMOS tube M3, M4 of amplifying unit 4 respectively
Source class, while NMOS tube M1, M2 drain electrode respectively connection filter unit 3 electric capacity C5, C6 to amplifying unit 4 NMOS tube
M3, M4 grid.The source class of NMOS tube M3, M4 of amplifying unit 4 connects electric capacity C7, C8 to ground respectively.This connection method is protected
Secondary amplification can be carried out by amplifying unit 4 by having demonstrate,proved the signal code of the generation of input block 1, thus two-stage amplifying circuit ensure that
Output end is to the preferable isolation performance of input.The electricity for the amplification that signal code after secondary amplification is produced by balun unit 5
It is radio frequency single-end output signal to press signal.
The difference of the present embodiment turns single-ended amplifier operating current about 6.8mA under 3.3V supply voltages.The difference turns
Single-ended amplifier three dB bandwidth is about 1.5GHz, and voltage gain is about 10dB.By contrast, its performance is far superior to using tradition
The difference that common gate structure and LC baluns are realized turns single-ended amplifier.
Embodiment described above is only that the preferred embodiment of the present invention is described, not to the model of the present invention
Enclose and be defined, on the premise of design spirit of the present invention is not departed from, technical side of the those of ordinary skill in the art to the present invention
Various modifications and improvement that case is made, all should fall within the scope of protection of the present invention.
Claims (4)
1. a kind of broadband turns single-ended amplifier, it is characterised in that：It is single including input block (1), chokes unit (2), filtering
First (3), amplifying unit (4) and balun unit (5), wherein,
The positive and negative two ends of differential radio frequency input signal connect the positive input terminal Vin+ and negative input end of input block (1) respectively
Vin-, the signal code that input block (1) is produced is by filter unit (3), the amplification of the amplifying unit (4) through current multiplexing,
Balun unit (5), the single-ended radio frequency signal of final output amplification are delivered to again；
Input block (1) includes NMOS tube M1, NMOS tube M2, first, second two resistance, first, second, third, fourth, four
Individual electric capacity, NMOS tube M1 and NMOS tube M2 grid to be connected be all connected with the first biased electrical after first resistor and second resistance respectively
Connection NMOS tube M2 source electrode after pressure, the NMOS tube M1 electric capacity of gate series second, and it is defeated by the 4th electric capacity and differential radio frequency
Enter the negative input end connection of signal, connection NMOS tube M1 source electrode after the NMOS tube M2 electric capacity of gate series first, and pass through the
Three electric capacity are connected with the positive input terminal of differential radio frequency input signal；
The chokes unit (2) provides DC current path, while carrying out chokes to input signal；Chokes unit (2) includes the
First, the second two inductance, one end of first, second inductance connects NMOS tube M1 and NMOS tube M2 in input block (1) respectively
Source class, the other end of first, second inductance is grounded.
2. broadband according to claim 1 turns single-ended amplifier, it is characterised in that：The filter unit (3) includes
Five, the 6th two electric capacity and the three, the 4th two inductance, one end of the five, the 6th electric capacity are connected in input block (1) respectively
NMOS tube M1 and NMOS tube M2 drain electrode, the other end of the five, the 6th electric capacity connects the NMOS tube in amplifying unit (4) respectively
M3 and NMOS tube M4 grid level, one end of the three, the 4th inductance connects NMOS tube M1 and NMOS tube in input block (1) respectively
M2 drain electrode, the other end of the three, the 4th inductance connects the source of NMOS tube M3 and NMOS tube M4 in amplifying unit (4) respectively
Level.
3. broadband according to claim 2 turns single-ended amplifier, it is characterised in that：The amplifying unit (4) includes
NMOS tube M3, NMOS tube M4, the three, the 4th two resistance, the seven, the 8th two electric capacity, NMOS tube M3 and NMOS tube M4 grid
Pole being connected the source electrode difference of the second bias voltage of be all connected with after 3rd resistor and the 4th resistance, NMOS tube M3 and NMOS tube M4 respectively
By the seven, the 8th capacitance connections to ground.
4. broadband according to claim 3 turns single-ended amplifier, it is characterised in that：The balun unit (5) includes
Primary coil LPWith secondary coil LS, primary coil LPOne end connection amplifying unit (4) in NMOS tube M3 drain electrode, it is primary
Coil LPOther end connection amplifying unit (4) in NMOS tube M4 drain electrode, primary coil LPCentre cap connection power supply,
Secondary coil LSOne end connection ground, secondary coil LSThe other end be amplifier output end, export single-ended radio frequency signal, just
Level coil LPWith secondary coil LSBy symmetrical mutually around composition transformer Balun.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710176476.4A CN106953602A (en) | 2017-03-23 | 2017-03-23 | A kind of broadband turns single-ended amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710176476.4A CN106953602A (en) | 2017-03-23 | 2017-03-23 | A kind of broadband turns single-ended amplifier |
Publications (1)
| Publication Number | Publication Date |
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| CN106953602A true CN106953602A (en) | 2017-07-14 |
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| CN201710176476.4A Pending CN106953602A (en) | 2017-03-23 | 2017-03-23 | A kind of broadband turns single-ended amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117833842A (en) * | 2024-03-06 | 2024-04-05 | 中国电子科技集团公司第五十八研究所 | Differential cascode structure radio frequency drive amplifier with gain temperature compensation |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007243946A (en) * | 2006-03-06 | 2007-09-20 | Seiko Epson Corp | Low noise amplifiers for low-power impulse radio ultra-wideband receiver |
| CN104935266A (en) * | 2015-06-19 | 2015-09-23 | 华东师范大学 | CMOS fully-integrated pseudo-differential low noise amplifier working at 71 to 76 GHz |
| US9479202B2 (en) * | 2008-02-19 | 2016-10-25 | Infineon Technologies Ag | System and method for burst mode amplifier |
| CN106464210A (en) * | 2014-05-23 | 2017-02-22 | 高通股份有限公司 | Multi-band power amplifier |
-
2017
- 2017-03-23 CN CN201710176476.4A patent/CN106953602A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007243946A (en) * | 2006-03-06 | 2007-09-20 | Seiko Epson Corp | Low noise amplifiers for low-power impulse radio ultra-wideband receiver |
| US9479202B2 (en) * | 2008-02-19 | 2016-10-25 | Infineon Technologies Ag | System and method for burst mode amplifier |
| CN106464210A (en) * | 2014-05-23 | 2017-02-22 | 高通股份有限公司 | Multi-band power amplifier |
| CN104935266A (en) * | 2015-06-19 | 2015-09-23 | 华东师范大学 | CMOS fully-integrated pseudo-differential low noise amplifier working at 71 to 76 GHz |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117833842A (en) * | 2024-03-06 | 2024-04-05 | 中国电子科技集团公司第五十八研究所 | Differential cascode structure radio frequency drive amplifier with gain temperature compensation |
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Application publication date: 20170714 |