CN106953145A - Based on four mould defects formula resonator three passband filter structures - Google Patents
Based on four mould defects formula resonator three passband filter structures Download PDFInfo
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- CN106953145A CN106953145A CN201710162719.9A CN201710162719A CN106953145A CN 106953145 A CN106953145 A CN 106953145A CN 201710162719 A CN201710162719 A CN 201710162719A CN 106953145 A CN106953145 A CN 106953145A
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- slabs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/20327—Electromagnetic interstage coupling
- H01P1/20354—Non-comb or non-interdigital filters
- H01P1/20381—Special shape resonators
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- Electromagnetism (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The present invention disclose it is a kind of based on four mould defects formula resonator three passband filter structures, including PCB dielectric-slabs, four mould defects ground formula resonator and two microstrip feed lines;Four mould defects formula resonator include the first resonant element and four the second resonant elements;One end of four the second resonant elements connects four ends of the first resonant element respectively;The front end of microstrip feed line extends respectively into the edge of PCB dielectric-slabs, the end of two microstrip feed lines extends to the first central axis and terminated from the remaining silent of the second resonant element from positioned at two article of the 4th line of rabbet joint of the first line of rabbet joint homonymy respectively, two microstrip feed lines are symmetrical on the first central axis, two microstrip feed line end spacing are close, so as to form the feed structure that source carries coupling, four transmission zero three passband filter structures of formation of feed structure formation.The three passband filter structures of the present invention produce three basic transmission passbands, with higher passband selectivity, it is not necessary to increase extra resonance body, reduce physical dimension.
Description
Technical field
The present invention relates to frequency microwave communication technical field, more particularly to it is a kind of based on four mould defects formula resonator three
Passband filter structure.
Background technology
In modern microwave communication system, bandpass filter (BPF) need to have good selectivity, and Out-of-band rejection degree is wide
Stopband and miniaturization structure.Although traditional multimode BPF based on loaded type resonator has preferable selectivity, deposit
In many parasitic passbands.Multimode resonator can produce multiple modes of resonance by single resonant body, therefore, humorous with multimode
The device that shakes design microwave device can effectively reduce device size.The passband selectivity of bandpass filter of the prior art is not high,
The demand of modern microwave communication system can not be fully met.Although multimode resonator has been suggested, simply apply to broadband
The design of wave filter.And the present invention employs new source based on QMDGSR and carries couple feed method, propose be based on first
The QMDGSR less three passbands filter structure of size.Give simultaneously and demonstrate its equivalent-circuit model, be deduced this
The zero point computational methods of three passband filter structures.
The content of the invention
The main object of the present invention provide it is a kind of based on four mould defects formula resonator three passband filter structures, not only plus
Work is simply with low cost, and produces three basic transmission passbands, with higher passband selectivity, it is not necessary to which increase is extra humorous
Vibration body, reduces physical dimension.
To achieve the above object, the invention provides it is a kind of based on four mould defects formula resonator three passbands filter knot
Structure, including PCB dielectric-slabs, four mould defects ground formula resonator and two microstrip feed lines, the four moulds defect formula resonator carve
Erosion is on a surface of PCB dielectric-slabs, and two microstrip feed lines are separately positioned on another surface of PCB dielectric-slabs, the four moulds defect
The shape of ground formula resonator on the four moulds defect formula resonator the first central axis it is symmetrical, and on the four moulds defect
Second central axis of ground formula resonator is symmetrical, and the first central axis is mutually perpendicular to the second central axis;
The four moulds defect formula resonator include the first resonant element and four the second resonant elements, the first resonant element
It is made up of first line of rabbet joint, second line of rabbet joint and third slot line, the second resonant element is by the 4th line of rabbet joint, the 5th line of rabbet joint and the 6th line of rabbet joint structure
Into, wherein, the first resonant element is shaped as H-shaped or the H-shaped that is defined, and the second resonant element is shaped as L-shaped, quasi- L-shaped, U
Shape or the U-shaped that is defined;One end of four the second resonant elements connects four ends of the first resonant element respectively, and each is second humorous
The unit that shakes extend to the first central axis and to four mould defects formula resonator center bend;Positioned at the first central axis homonymy
Two the second resonant elements between be separated with interval;
The front end of two microstrip feed lines extends respectively into edge two ports of formation of PCB dielectric-slabs, two microstrip feed lines
End extend respectively from two article of the 4th line of rabbet joint positioned at the first line of rabbet joint homonymy to the first central axis and terminate close to second humorous
Shake the place of remaining silent of unit, and two microstrip feed lines are symmetrical on the first central axis, and the spacing between two microstrip feed line ends is leaned on
Closely, two microstrip feed line formation sources carry the feed structure of coupling, four transmission zero formation three passbands filters of feed structure formation
Wave structure.
It is preferred that, one end of first line of rabbet joint connects the middle part of second line of rabbet joint, the other end connection the 3rd of first line of rabbet joint
The middle part of the line of rabbet joint, second line of rabbet joint and third slot line are parallel and vertical with first line of rabbet joint;One end of 4th line of rabbet joint connects the second groove
The other end of line or third slot line, and to the first central axis to extension, the other end of the 4th line of rabbet joint connects the 5th line of rabbet joint
One end, one end that the other end of the 5th line of rabbet joint connects the 6th line of rabbet joint simultaneously extends to the second central axis, the 4th line of rabbet joint and the 6th
The line of rabbet joint is parallel and vertical with the 5th line of rabbet joint.
It is preferred that, part first line of rabbet joint, second line of rabbet joint or third slot line positioned at the first line of rabbet joint side, positioned at
The PCB medium plate shapes that the 4th line of rabbet joint, the 5th line of rabbet joint and the 6th line of rabbet joint in same second resonant element of one line of rabbet joint side are surrounded
Into the first pole plate, first pole plate is shaped as L-shaped, and the quantity of the first pole plate is two, and two the first pole plates are in first
Heart axis for axis symmetry.
It is preferred that, part first line of rabbet joint, second line of rabbet joint or third slot line positioned at the first line of rabbet joint opposite side, it is located at
The PCB media that the 4th line of rabbet joint, the 5th line of rabbet joint and the 6th line of rabbet joint in same second resonant element of first line of rabbet joint opposite side are surrounded
Plate shape is into the second pole plate, and the second pole plate is shaped as L-shaped, and the quantity of the second pole plate is two, and two the second pole plates are on first
Central axis axial symmetry.
It is preferred that, the length of first line of rabbet joint is L1=23.5mm, width are W1=0.68mm;Second line of rabbet joint and the 3rd
The length of the line of rabbet joint is L2=12mm;Second line of rabbet joint and the width of third slot line are W2=0.3mm;The length of 4th line of rabbet joint is
L3=11.05mm, width are W3=0.3mm;The length of 5th line of rabbet joint is L4=2.8mm, width are W3=0.3mm;6th line of rabbet joint
Length be L5=7.3mm, width are W3=0.3mm;The distance between two article of the 5th line of rabbet joint positioned at the first line of rabbet joint homonymy is S1
=0.8mm, the distance between first line of rabbet joint and the 6th line of rabbet joint are S2=2.27mm.
It is preferred that, the first inductance L of part PCB dielectric-slabs formation between first line of rabbet joint and the 6th line of rabbet jointS, the first electricity
Feel LSQuantity be four, positioned at two the first inductance L of formation respectively of the first line of rabbet joint homonymySTwo PCB dielectric-slabs connection,
Positioned at the first inductance of formation L of the first central axis homonymySPCB dielectric-slabs with formed the first pole plate PCB dielectric-slabs connect,
Positioned at the first inductance of formation L of the first central axis homonymySPCB dielectric-slabs with formed the second pole plate PCB dielectric-slabs connect;
The second inductance L of PCB dielectric-slabs formation between two article of the 5th line of rabbet joint of the first line of rabbet joint homonymyP, the second inductance LP
Quantity be two, positioned at the second inductance of formation L of the first line of rabbet joint homonymyPPCB dielectric-slabs and respectively formed two first electricity
Feel LSTwo PCB dielectric-slabs connect and form the shape of T-shaped.
It is preferred that, the four moulds defect formula resonator periphery PCB dielectric-slabs formation radio frequency ground level, form radio frequency
The second inductance L of PCB dielectric-slabs and formation of planePPCB dielectric-slabs connection, positioned at the first pole plate of the first central axis homonymy
With the first electric capacity C of the second pole plate formationM, the second electric capacity C is formed between the first pole plate or the second pole plate and metal groundC。
It is preferred that, the PCB dielectric-slabs formation source between the space from end of two microstrip feed lines carries coupled capacitor CS, often
PCB dielectric-slab formation feed coupled capacitor C of a piece microstrip feed line and four mould the defects ground between formula resonatorP, feed coupling electricity
Hold CPQuantity be two, positioned at PCB dielectric-slabs and formation two respectively on the downside of first line of rabbet joint of each microstrip feed line
Individual first inductance LSPCB dielectric-slabs connection.
It is preferred that, two microstrip feed lines are corresponding with the position of two article of the 4th line of rabbet joint of the first line of rabbet joint homonymy respectively and close
Symmetrical in the first central axis, the width of microstrip feed line is wider than the width of the 4th line of rabbet joint, and the end of the microstrip feed line is terminated at
At the 5th line of rabbet joint, the edge close to the second central axis to remote second center of the 4th line of rabbet joint of each microstrip feed line
The distance at the edge of axis is d1=1.35mm.
It is preferred that, the spacing d between two microstrip feed line ends2For 1.6mm, the width W of each microstrip feed line0
2.34mm is, the impedance of each microstrip feed line is 50 Ω.
Compared to prior art, it is of the present invention based on four mould defects three passband filter structures of formula resonator realize
Not only process simple with low cost, and three basic transmission passbands can be produced, form three passband filter structures, thus it is wide
It is general to be applied in broadband and multi-frequency band radio-frequency microwave communication.Due to four mould defects formula resonator be to slot to obtain on feeding plane
, therefore need not increase extra resonance body, with reduce it is of the present invention based on four mould defects formula resonator three passbands
The function of filter structure size.
Brief description of the drawings
Fig. 1 be the present invention based on four mould defects formula resonator three passband filter structures overall structure diagram;
Fig. 2 be four mould defects in three passbands filter structure of the invention formula resonator etch in PCB dielectric-slab bottom surfaces
Structural representation;
Fig. 3 be four mould defects the first resonant element in formula resonator structure chart;
Fig. 4 be four mould defects the second resonant element in formula resonator structure chart;
Fig. 5 is structure of the two microstrip feed lines etching in three passbands filter structure of the invention in PCB dielectric-slabs upper surface
Schematic diagram;
Fig. 6 be the present invention based on four mould defects formula resonator three passband filter structures equivalent-circuit model;
Fig. 7 be the present invention based on four mould defects formula resonator three passband filter structures parity mode equivalent circuit;
Fig. 8 be the present invention based on four mould defects formula resonator three passband filter structures PCB emulation and circuit simulation
Result schematic diagram;
Fig. 9 is that influences of the spacing d2 to four transmission zeros TZ1, TZ2, TZ3, TZ4 between two microstrip feed lines is illustrated
Figure;
Figure 10 be four mould defects formula resonator parity mode equivalent-circuit model;
Figure 11 is the first electric capacity CMInfluence and four mould defects to four transmission zeros formula resonator in fTZ1And fTZ4
CURRENT DISTRIBUTION during frequency;
Figure 12 is the simplification circuit model and its corresponding parity mode equivalent circuit diagram of three passband filter structures.
The object of the invention is realized, functional characteristics and advantage will will in the lump join in embodiment part in conjunction with the embodiments
It is described further according to accompanying drawing.
Embodiment
Further to illustrate the present invention to reach the technological means and effect that above-mentioned purpose is taken, below in conjunction with accompanying drawing
And preferred embodiment, embodiment, structure, feature and its effect to the present invention are described in detail.It should be appreciated that this
The specific embodiment of place description is not intended to limit the present invention only to explain the present invention.
Shown in reference picture 1, Fig. 1 be the present invention based on four mould defects formula resonator three passband filter structures overall knot
Structure schematic diagram.In the present embodiment, three passbands filter structure proposed by the present invention includes four mould defects ground formula resonator
(QMDGSR) 1, radio frequency ground level 2 and two microstrip feed lines 3.The four moulds defect formula resonator 1 etch in PCB dielectric-slabs
10 surface (such as lower surface, with reference to shown in Fig. 2), the remainder of the surface with not etching four mould defects formula resonator 1
Point be referred to as radio frequency ground level 2, two microstrip feed lines 3 be separately positioned on PCB dielectric-slabs 10 another surface (such as upper surface,
With reference to shown in Fig. 5).The PCB dielectric-slabs 10 are a kind of metal medium plate, and the thickness of the PCB dielectric-slabs 10 is 0.79mm, dielectric
Constant is 2.34.
With reference to shown in Fig. 2, Fig. 2 be four mould defects formula resonator etching PCB dielectric-slab bottom surfaces structural representation.
In the present embodiment, the four moulds defect formula resonator 1 have up and down and left and right be symmetrical structure so that four mould lack
Fall into ground formula resonator 1 has four modes of resonance simultaneously, and the resonant frequency of each mode of resonance has good adjustability.It is described
Four mould defects formula resonator 1 shape and structure be described in detail below:The four moulds defect formula resonator 1 shape on
The four moulds defect formula resonator 1 the first central axis ab it is symmetrical, and on the four moulds defect formula resonator 1 second
Central axis cd is symmetrical, and the first central axis ab is mutually perpendicular to the second central axis cd.In the present embodiment, four mould lacks
Falling into ground formula resonator 1 includes the first resonant element 11 and four the second resonant elements 12.Wherein, the shape of the first resonant element 11
For H-shaped or the H-shaped that is defined, the quasi- H-shaped defined in the present embodiment is the shape for being similar to H-shaped on the whole.Second resonant element 12
Be shaped as L-shaped, quasi- L-shaped, U-shaped or the U-shaped that is defined, the quasi- L-shaped defined in the present embodiment is is similar to L-shaped on the whole, for example
Bent less one section an of free end (one end not being connected with the first resonant element 11) for L-shaped, this is very small one section
Length length on side where the free end for it is shorter.Quasi- U-shaped defined in this implementation is to be similar to U-shaped on the whole
A free end (one end not being connected with the first resonant element 11) can bend again at least one times, it is curved after each bending
The length for rolling over end is shorter for the length on side where the free end, so that still it is similar to U-shaped on the whole, will not
Significantly affect the performance of the second resonant element 12.One end of four the second resonant elements 12 connects the first resonant element 11 respectively
Four ends.Each second resonant element 12 extend to the first central axis ab and to four mould defects formula resonator 1 center it is curved
Folding, the number of times of the bending is twice.The equal direction of the L-shaped of four the second resonant elements 12, quasi- L-shaped, the opening of U-shaped or quasi- U-shaped
Four mould defects formula resonator 1 surrounding.Positioned at two second of the first central axis ab or the second central axis cd homonymies
Interval is separated between resonant element 12.
With reference to as shown in figure 3, Fig. 3 be four mould defects the first resonant element in formula resonator structure chart.In this reality
Apply in example, first resonant element 11 is made up of first line of rabbet joint 111, second line of rabbet joint 112 and third slot line 113.First groove
One end of line 111 connects the middle part of second line of rabbet joint 112, and the other end of first line of rabbet joint 111 connects the middle part of third slot line 113.The
Two line of rabbet joint 112 and third slot line 113 are parallel and vertical with first line of rabbet joint 111, therefore, first line of rabbet joint 111, second line of rabbet joint 112
H-shaped or quasi- H-shaped are constituted with third slot line 113.
With reference to as shown in figure 4, Fig. 4 be four mould defects the second resonant element in formula resonator structure chart.In this reality
Apply in example, when the second resonant element 12 is U-shaped or quasi- U-shaped, second resonant element 12 is by the 4th line of rabbet joint 124, the 5th line of rabbet joint
125 and the 6th the line of rabbet joint 126 constitute.One end of 4th line of rabbet joint 124 connects second line of rabbet joint 112 or the other end of third slot line 113,
And extend to the first central axis to ab, the other end of the 4th line of rabbet joint 124 connects one end of the 5th line of rabbet joint 125, the 5th line of rabbet joint
125 other end connects one end of the 6th line of rabbet joint 126 and extended to the second central axis cd.4th line of rabbet joint 124 and the 6th line of rabbet joint
126 is parallel and vertical with the 5th line of rabbet joint 125.Wherein, the length of the 6th line of rabbet joint 126 is shorter than the length of the 4th line of rabbet joint 224.Therefore,
4th line of rabbet joint 124, the 5th line of rabbet joint 125 and the 6th line of rabbet joint 126 constitute U-shaped or quasi- U-shaped.When the second resonant element 12 be L-shaped,
Quasi- L-shaped, second resonant element 12 can also pass through corresponding line of rabbet joint formation L-shaped or quasi- L-shaped structure.
Referring again to shown in Fig. 2, first line of rabbet joint of part 111, second line of rabbet joint 112 positioned at the side of first line of rabbet joint 111 or
Third slot line 113, the 4th line of rabbet joint 124 in same second resonant element 12 of the side of first line of rabbet joint 111, the 5th line of rabbet joint 125
PCB dielectric-slabs the first pole plate 31 of formation surrounded with the 6th line of rabbet joint 126, first pole plate 31 is shaped as L-shaped.First pole plate 31
Quantity for two (be respectively the PCB dielectric-slabs surrounded with second line of rabbet joint 112 and the PCB media surrounded with third slot line 113
Plate), two the first pole plates 31 are on the first central axis ab axial symmetry.It is first line of rabbet joint of part 111, another positioned at first line of rabbet joint 111
Second line of rabbet joint 112 or third slot line 113 of side, in same second resonant element 12 of the opposite side of first line of rabbet joint 111
The 4th line of rabbet joint 124, PCB dielectric-slabs the second pole plate 32 of formation for surrounding of the 5th line of rabbet joint 125 and the 6th line of rabbet joint 126, the second pole plate
32 are shaped as L-shaped.It (is respectively the PCB dielectric-slabs that are surrounded with second line of rabbet joint 112 and with that the quantity of second pole plate 32, which is two,
The PCB dielectric-slabs that third slot line 113 is surrounded), two the second pole plates 32 are on the first central axis ab axial symmetry.
Referring again to shown in Fig. 1, the length of first line of rabbet joint 111 is L1=23.5mm, width are W1=0.68mm;Second line of rabbet joint
112 and the equal length of third slot line 113, it is L2=12mm;Second line of rabbet joint 112 and the width of third slot line 113 are equal,
For W2=0.3mm;The length of 4th line of rabbet joint 124 is L3=11.05mm, width are W3=0.3mm;The length of 5th line of rabbet joint 125 is
L4=2.8mm, width are W3=0.3mm;The length of 6th line of rabbet joint is L5=7.3mm, width are W3=0.3mm;Positioned at the first groove
The distance between two article of the 5th line of rabbet joint 125 of the homonymy of line 111 is S1=0.8mm, between first line of rabbet joint 111 and the 6th line of rabbet joint 126
Distance be S2=2.27mm;
Etched as shown in figure 5, Fig. 5 is two microstrip feed lines in three passbands filter structure of the invention on PCB dielectric-slabs
The structural representation on surface.Due to two microstrip feed lines 3 be separately positioned on relative to four mould defects formula resonator 1 set
On another surface of PCB dielectric-slabs 10, thus two microstrip feed lines 3 on another surface of PCB dielectric-slabs 10 to four mould defects
Ground formula resonator 1 is fed.In the present embodiment, the front end of two microstrip feed lines 3 extends respectively into the side of PCB dielectric-slabs 10
Two port (first port P of edge formation1With second port P2), the end of microstrip feed line 3 is respectively from same positioned at first line of rabbet joint 111
Two article of the 4th line of rabbet joint 124 of side extends to the first central axis ab and terminates the L-shaped, quasi- L-shaped, U close to the second resonant element 12
The place of remaining silent of shape or quasi- U-shaped, two microstrip feed lines 3 are symmetrical on the first central axis ab.It is emphasized that two micro-strips
Feeder line 3 is simultaneously same positioned at first line of rabbet joint 111 on two article of the 4th line of rabbet joint 124 of the same upside of first line of rabbet joint 111, or simultaneously
One downside two article of the 4th line of rabbet joint 124 on, rather than positioned at four mould defects formula resonator 1 diagonal on two article of the 4th groove
On line 124.
In the present embodiment, the position pair of two article of the 4th line of rabbet joint 124 of two homonymies of 3 and first line of rabbet joint of microstrip feed line 111
Should, and it is symmetrical on the first central axis ab.The width of microstrip feed line 3 is wider than the width of the 4th line of rabbet joint 124 so that microstrip feed line
4th line of rabbet joint 124 of 3 covering parts.The width W of every microstrip feed line 30Preferably 2.34mm, the other end of microstrip feed line 3 is whole
Terminate at the 5th line of rabbet joint 125, do not touch the 5th line of rabbet joint 125.It is preferred that, the impedance of each microstrip feed line 3 is
50 Ω, the close second central axis cd of each microstrip feed line 3 edge are to the 4th line of rabbet joint 124 away from the second central axis
The distance at cd edge is d1, the spacing between two microstrip feed lines 3 is close, and the spacing defined between two microstrip feed lines 3 is
d2, the spacing is d2It is preferably d in the present embodiment less than 5mm (i.e. value in the range of 0-5mm)2=1.6mm;Due to two micro-strips
Spacing between feeder line 3 is d2It is determined that, once the length of PCB dielectric-slabs 10 determines (such as L0), therefore each microstrip feed line 3
Length then be d0=(L0-d2)/2.In the present embodiment, table 1 below for the present invention based on four mould defects formula resonator threeway
Band filter structure dimensional parameters:
Table 1:Based on four mould defects formula resonator three passband filter structure dimensional parameters
Parameter | mm | Parameter | mm | Parameter | mm | Parameter | mm |
W0 | 2.34 | W1 | 0.68 | W2 | 0.3 | W3 | 0.3 |
d1 | 1.35 | d2 | 1.6 | S1 | 0.8 | S2 | 2.27 |
In the present invention, due to the end distance of two microstrip feed lines 3 lean on it is close (between two microstrip feed lines 3
Away from d2For 0-5mm), therefore form the feed structure that source carries coupling.Because the source carries the formation of coupling, the feed structure can
Four transmission zeros are produced, so as to form three passbands filter structure of the present invention.As long as it should be noted that two micro-
The end distance of ribbon feeder 3 is less than 5mm, can form three pass-band performances.The specific embodiment d of the present invention2Preferably 1.6mm,
Preferable three pass-band performance can be obtained.
As shown in fig. 6, Fig. 6 be the present invention based on four mould defects formula resonator three passband filter structures equivalent circuit
Model.By above-mentioned structure design, the present invention use odd even film theory come for four mould defects formula resonator 1 extract it is equivalent
Circuit model, the three specific equivalent-circuit models of passband filter structure are described as follows:
The first inductance L of part PCB dielectric-slabs formation between first line of rabbet joint 111 and the 6th line of rabbet joint 126S, due to there is four
Second resonant element 12, therefore the first inductance LSQuantity be four.Positioned at the formation respectively two of the homonymy of first line of rabbet joint 111
One inductance LSTwo PCB dielectric-slabs connection.Positioned at the first inductance of formation L of the first central axis ab homonymiesSPCB dielectric-slabs
Connected with the PCB dielectric-slabs for forming the first pole plate.Positioned at the first inductance of formation L of the first central axis ab homonymiesSPCB media
Plate is connected with the PCB dielectric-slabs for forming the second pole plate 32.
The second inductance L of PCB dielectric-slabs formation between two article of the 5th line of rabbet joint 125 of the homonymy of first line of rabbet joint 111P.By
Respectively there are two article of the 5th line of rabbet joint 125, therefore the second inductance L in the both sides of first line of rabbet joint 111PQuantity be two.Positioned at the first groove
The second inductance of formation L of the homonymy of line 111PPCB dielectric-slabs and respectively formed two the first inductance LSTwo PCB dielectric-slabs connect
Lead to and formed the shape of T-shaped.
The four moulds defect the periphery of formula resonator 1 PCB dielectric-slabs formation radio frequency ground level 2, form radio frequency ground level 2
PCB dielectric-slabs and formed the second inductance LPPCB dielectric-slabs connection.Positioned at the first pole plate 31 of the first central axis ab homonymies
With the first electric capacity C of the second pole plate 32 formationM, second is formed between the first pole plate 31 or the second pole plate 32 and metal ground 11
Electric capacity CC。
PCB dielectric-slabs formation source between two space from ends of microstrip feed line 3 carries coupled capacitor CS, each microstrip feed line
3 and four PCB dielectric-slab formation feed coupled capacitor C of the mould defect ground between formula resonator (QMDGSR) 1P.Due to have two it is micro-
Ribbon feeder 3, therefore form two feed coupled capacitor CP.PCB dielectric-slabs positioned at each microstrip feed line 3 are with being located at the first groove
Two the first inductance L of formation respectively of the downside of line 111STwo PCB dielectric-slabs connection.
As shown in fig. 7, being the parity mode equivalent circuit of three passband filter structures of the present invention based on three passband filter structures.
Wherein, Fig. 7 (a) is the strange mould equivalent circuit of three passband filter structures, and Fig. 7 (b) is the even mould equivalent electric of three passband filter structures
Road.Wherein, the first central axis ab can be regarded as a virtual ground plane equivalent to short circuit in strange mould.In first
When heart axis ab is equivalent to short circuit, then electric current will not pass through the second inductance LP, then the second inductance LPIt is invalid.First central axis ab
Equivalent to open circuit in even mould.When the first central axis ab is equivalent to open circuit, then the second inductance L is formedPPCB dielectric-slab phases
When in being cut into two halves.Because the size of inductance and the thickness of metal are relevant, therefore the first central axis ab is equivalent to open circuit
When the second inductance LPTwice of size, i.e., now the second inductance LPSize be 2LP.Similarly, the second central axis cd is short
Equivalent to short circuit in Lu Qi moulds, a virtual ground plane can be regarded as.When the second central axis cd is short-circuit, then first
Electric capacity CMThe distance between two-stage plate equivalent to shortening half.The distance between size and pole plate due to electric capacity are relevant,
Therefore the first electric capacity C when the second central axis cd is equivalent to short circuitMSize be the first original electric capacity CMSize two
Times, i.e., now the first electric capacity CMSize be 2CM.When the second central axis cd in even mould equivalent to open circuit when, then the first electric capacity
CMIn there is no electric charge, the first electric capacity CM=0.
With reference to shown in Fig. 8, Fig. 8 for the present invention based on four mould defects formula resonator 1 three passband filter structures PCB imitate
Very with Simulation results schematic diagram.Wherein, the former device value of circuit simulation is CM=0.6pF, CC=1.62pF, CP=1.5pF,
CS=0.2pF, LP=1.1nH, LS=1.27nH.Wherein S11Represent two port P1And P2Reflectance factor, S21Represent two ends
Mouth P1And P2Between transmission coefficient.As can be seen from Figure 8, PCB emulation has very high registration with circuit simulation, therefore
The equivalent-circuit model of three passband filter structures of the invention has higher accuracy.Because feed structure is using source load coupling side
Formula, the three passbands filter structure generates four transmission zeros, i.e. TZ1, TZ2, TZ3, TZ4, so as to form three passbands.
As shown in figure 9, Fig. 9 is the spacing d between two microstrip feed lines 32To four transmission zeros TZ1, TZ2, TZ3, TZ4
Influence schematic diagram.In the present embodiment, in using the spacing d2 between two microstrip feed lines 3 and being 0-5mm, the present embodiment
D2Four transmission zeros TZ1, TZ2, TZ3, TZ4 influence are separately verified using 1.8mm, 0.7mm and 0.2mm.From Fig. 9
As can be seen that the spacing d between two microstrip feed lines 32TZ1 and TZ4 is only influenceed, without influenceing TZ2 and TZ3, therefore can be true
It is to carry coupling by source to produce to determine TZ1 and TZ4, and TZ2 and TZ3 are the internal circuit generations by three passband filter structures.
In order to calculate TZ2 and TZ3, the present invention analyzes the equivalent electric of the three passbands filter structure with even odd mode theory
Road.As shown in Figure 1, four mould defects formula resonator 1 there is the axisymmetric feed structure in left and right, and on the first central axis ab
Symmetrically, therefore four mould defects can be obtained the parity mode equivalent-circuit model of formula resonator 1, shown in such as Figure 10 (a) and (b).Its
In, 10 (a) be four mould defects formula resonator 1 strange mould equivalent-circuit model;10 (b) is four mould defects ground formula resonator 1
Even mould equivalent-circuit model.From four mould defects the CURRENT DISTRIBUTION of formula resonator 1 can be seen that in fTZ2During frequency, electric current can be by
Four mould defects the upper end of formula resonator 1 flow into radio frequency ground level 2, form a grounded circuit, cause electric current cannot flow into another
Port, so as to produce TZ2.In fTZ3During frequency, four mould defects the top of formula resonator 1 form second or so transmission
Radio frequency path, and this structure four mould defects the latter half of formula resonator 1 there is radio frequency transmission path in itself, because
This two path forms signal cancellation, so as to produce TZ3.Admittance computing formula of the structure under the conditions of even mould and Qi Mo
(Yine1,Yino1) respectively as shown in (1) and (2) formula:
Wherein, Yine1 represents even mould admittance, and Yino1 represents Qi Mo admittance, by solving equation Yine1=Yino1, can obtain
TZ2 resonant frequency fTZ2With TZ3 resonant frequency fTZ3, as shown in (3) formula.
In order to calculate TZ1 and TZ4 resonant frequency fTZ1And fTZ4, three-passband filter of the present invention is under the conditions of parity mode
Equivalent circuit such as Fig. 7 (a) and (b) are shown, similarly, can be by solving equation Yine2=Yino2To obtain corresponding resonant frequency.But
Now circuit is very complicated, therefore the present invention proposes an efficient computational methods.It is the first electric capacity C as shown in figure 11MTo four
The influence of individual transmission zero and four mould defects formula resonator 1 in fTZ1And fTZ4CURRENT DISTRIBUTION during frequency.It can be seen that the
One electric capacity CMHave little influence on fTZ1And fTZ4, and in fTZ1And fTZ4Electric current with being mainly distributed on four mould defects formula resonance during frequency
The latter half of device 1.Therefore, in fTZ1And fTZ4During frequency, the circuit model of the three passbands filter structure can be reduced to such as figure
Shown in 12 (a), shown in its corresponding parity mode equivalent circuit such as Figure 12 (b).Parity mode equivalent circuit now has obtained significantly simple
Change, can be by solving equation Yine3=Yino3To obtain TZ1 resonant frequency fTZ1With TZ4 resonant frequency fTZ4, such as (4) formula
It is shown:
In order to verify fTZ1And fTZ4Accuracy, table 2 below lists fTZ1And fTZ4Calculated value is in different capacitance CSCondition
The contrast of lower and simulation value, it can be seen that result of calculation has very high registration with simulation result, so as to demonstrate fTZ1With
fTZ4Accuracy.
The f of table 2TZ1And fTZ4Simulation result and result of calculation contrast table
Wherein, Sim.fTZ1Represent fTZ1Simulation result, Cal.fTZ1Represent fTZ1Result of calculation, Sim.fTZ4Represent fTZ4
Simulation result, Cal.fTZ4Represent fTZ4Result of calculation.
It is of the present invention based on four mould defects three passband filter structures of formula resonator not only process simple with low cost,
And three basic transmission passbands can be produced, and three passband filter structures are formed, it is selective with higher passband therefore wide
It is general to be applied in broadband and multi-frequency band radio-frequency microwave communication.Due to four mould defects formula resonator be to slot to obtain on feeding plane
, therefore need not increase extra resonance body, with reduce it is of the present invention based on four mould defects formula resonator three passbands
The function of filter structure size.
The preferred embodiments of the present invention are these are only, are not intended to limit the scope of the invention, it is every to utilize this hair
Equivalent structure or the equivalent function conversion that bright specification and accompanying drawing content are made, or directly or indirectly it is used in other related skills
Art field, is included within the scope of the present invention.
Claims (10)
1. it is a kind of based on four mould defects formula resonator three passband filter structures, including PCB dielectric-slabs, four mould defects formula it is humorous
Shake device and two microstrip feed lines, the four moulds defect formula resonator etching on a surface of PCB dielectric-slabs, two micro-strips feedbacks
Line is separately positioned on another surface of PCB dielectric-slabs, it is characterised in that the four moulds defect formula resonator shape on this
Four mould defects formula resonator the first central axis it is symmetrical, and on the four moulds defect formula resonator the second central shaft
Line is symmetrical, and the first central axis is mutually perpendicular to the second central axis;
The four moulds defect formula resonator include the first resonant element and four the second resonant elements, the first resonant element is by the
One line of rabbet joint, second line of rabbet joint and third slot line are constituted, and the second resonant element is made up of the 4th line of rabbet joint, the 5th line of rabbet joint and the 6th line of rabbet joint,
Wherein, the first resonant element is shaped as H-shaped or the H-shaped that is defined, the second resonant element be shaped as L-shaped, quasi- L-shaped, U-shaped or
Person is defined U-shaped;One end of four the second resonant elements connects four ends of the first resonant element respectively, each second resonant element
To the first central axis extend and to four mould defects formula resonator center bend;Positioned at two of the first central axis homonymy
Interval is separated between second resonant element;
The front end of two microstrip feed lines extends respectively into edge two ports of formation of PCB dielectric-slabs, the end of two microstrip feed lines
End extends to the first central axis from two article of the 4th line of rabbet joint positioned at the first line of rabbet joint homonymy and terminated close to the second resonance list respectively
The place of remaining silent of member, two microstrip feed lines are symmetrical on the first central axis, and the spacing between two microstrip feed line ends is close, and two
Root microstrip feed line formation source carries the feed structure of coupling, three passband filter structures of the feed structure four transmission zeros of formation.
2. it is as claimed in claim 1 based on four mould defects formula resonator three passband filter structures, it is characterised in that:
One end of first line of rabbet joint connects the middle part of second line of rabbet joint, and the other end of first line of rabbet joint connects the middle part of third slot line,
Second line of rabbet joint and third slot line are parallel and vertical with first line of rabbet joint;
One end of 4th line of rabbet joint connects second line of rabbet joint or the other end of third slot line, and prolongs to the first central axis to the
Stretch, the other end of the 4th line of rabbet joint connects one end of the 5th line of rabbet joint, the other end of the 5th line of rabbet joint connect one end of the 6th line of rabbet joint and to
Second central axis extends, and the 4th line of rabbet joint and the 6th line of rabbet joint are parallel and vertical with the 5th line of rabbet joint.
3. it is as claimed in claim 1 based on four mould defects formula resonator three passband filter structures, it is characterised in that:Part
First line of rabbet joint, second line of rabbet joint or third slot line positioned at the first line of rabbet joint side, same positioned at the first line of rabbet joint side
PCB dielectric-slabs the first pole plate of formation that the 4th line of rabbet joint, the 5th line of rabbet joint and the 6th line of rabbet joint in two resonant elements are surrounded, first pole
Plate is shaped as L-shaped, and the quantity of the first pole plate is two, two the first pole plates are on the first central axis axial symmetry.
4. it is as claimed in claim 1 based on four mould defects formula resonator three passband filter structures, it is characterised in that part
First line of rabbet joint, second line of rabbet joint or third slot line positioned at the first line of rabbet joint opposite side, positioned at the same of the first line of rabbet joint opposite side
PCB dielectric-slabs the second pole plate of formation that the 4th line of rabbet joint, the 5th line of rabbet joint and the 6th line of rabbet joint in one second resonant element are surrounded, second
Pole plate is shaped as L-shaped, and the quantity of the second pole plate is two, two the second pole plates are on the first central axis axial symmetry.
5. it is as claimed in claim 1 based on four mould defects formula resonator three passband filter structures, it is characterised in that it is described
The length of first line of rabbet joint is L1=23.5mm, width are W1=0.68mm;The length of second line of rabbet joint and third slot line is L2=
12mm;Second line of rabbet joint and the width of third slot line are W2=0.3mm;The length of 4th line of rabbet joint is L3=11.05mm, width are
W3=0.3mm;The length of 5th line of rabbet joint is L4=2.8mm, width are W3=0.3mm;The length of 6th line of rabbet joint is L5=7.3mm,
Width is W3=0.3mm;The distance between two article of the 5th line of rabbet joint positioned at the first line of rabbet joint homonymy is S1=0.8mm, first line of rabbet joint with
The distance between 6th line of rabbet joint is S2=2.27mm.
6. it is as claimed in claim 1 based on four mould defects formula resonator three passband filter structures, it is characterised in that it is described
The first inductance L of part PCB dielectric-slabs formation between first line of rabbet joint and the 6th line of rabbet jointS, the first inductance LSQuantity be four, position
In two the first inductance L of formation respectively of the first line of rabbet joint homonymySTwo PCB dielectric-slabs connection, it is same positioned at the first central axis
The first inductance of formation L of sideSPCB dielectric-slabs with formed the first pole plate PCB dielectric-slabs connect, it is same positioned at the first central axis
The first inductance of formation L of sideSPCB dielectric-slabs with formed the second pole plate PCB dielectric-slabs connect;
The second inductance L of PCB dielectric-slabs formation between two article of the 5th line of rabbet joint of the first line of rabbet joint homonymyP, the second inductance LPNumber
Measure as two, positioned at the second inductance of formation L of the first line of rabbet joint homonymyPPCB dielectric-slabs and respectively formed two the first inductance LS's
Two PCB dielectric-slabs connect and form the shape of T-shaped.
7. it is as claimed in claim 6 based on four mould defects formula resonator three passband filter structures, it is characterised in that it is described
Four mould defects formula resonator periphery PCB dielectric-slabs formation radio frequency ground level, formed radio frequency ground level PCB dielectric-slabs and shape
Into the second inductance LPPCB dielectric-slabs connection, positioned at the first pole plate of the first central axis homonymy and the second pole plate formation first
Electric capacity CM, the second electric capacity C is formed between the first pole plate or the second pole plate and metal groundC。
8. it is as claimed in claim 6 based on four mould defects formula resonator three passband filter structures, it is characterised in that it is described
PCB dielectric-slabs formation source between the space from end of two microstrip feed lines carries coupled capacitor CS, each microstrip feed line and four moulds
PCB dielectric-slab formation feed coupled capacitor C of the defect ground between formula resonatorP, feed coupled capacitor CPQuantity be two, position
In the PCB dielectric-slabs and two the first inductance L of formation respectively on the downside of first line of rabbet joint of each microstrip feed lineSPCB be situated between
Scutum is connected.
9. it is as claimed in claim 1 based on four mould defects formula resonator three passband filter structures, it is characterised in that it is described
Two microstrip feed lines are corresponding with the position of two article of the 4th line of rabbet joint of the first line of rabbet joint homonymy respectively and symmetrical on the first central axis,
The width of microstrip feed line is wider than the width of the 4th line of rabbet joint, and the end of the microstrip feed line is ended close at the 5th line of rabbet joint, each
The distance at the edge close to the second central axis of root microstrip feed line to the edge of the 4th line of rabbet joint away from the second central axis is
d1=1.35mm.
10. it is as claimed in claim 9 based on four mould defects formula resonator three passband filter structures, it is characterised in that institute
State the spacing d between two microstrip feed line ends2For 1.6mm, the width W of each microstrip feed line0It is 2.34mm, Mei Yigen
The impedance of microstrip feed line is 50 Ω.
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018171183A1 (en) * | 2017-03-18 | 2018-09-27 | 深圳市景程信息科技有限公司 | Quad-mode defected ground structure resonator-based triple-passband filter structure |
WO2018171185A1 (en) * | 2017-03-18 | 2018-09-27 | 深圳市景程信息科技有限公司 | Triple-passband filter structure having four transmission zeros |
CN112840507A (en) * | 2018-10-19 | 2021-05-25 | 双信电机株式会社 | Filter |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105742768A (en) * | 2014-11-28 | 2016-07-06 | 青岛海尔电子有限公司 | Band-pass filter, high-order band-pass filter and performance analysis method |
CN105990632A (en) * | 2015-01-28 | 2016-10-05 | 青岛海尔电子有限公司 | Three-pass band filter |
CN107086347A (en) * | 2016-02-16 | 2017-08-22 | 青岛海尔电子有限公司 | Four mould defects ground formula resonator |
CN206673066U (en) * | 2017-03-18 | 2017-11-24 | 深圳市景程信息科技有限公司 | The passband filter structure of multimode three |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1901274B (en) * | 2006-07-27 | 2010-11-03 | 上海交通大学 | Super wide band plane microstrip filter |
CN107086338B (en) * | 2016-02-16 | 2019-05-21 | 青岛海尔电子有限公司 | Four mould defects ground formula filter |
CN106953145A (en) * | 2017-03-18 | 2017-07-14 | 深圳市景程信息科技有限公司 | Based on four mould defects formula resonator three passband filter structures |
-
2017
- 2017-03-18 CN CN201710162719.9A patent/CN106953145A/en active Pending
- 2017-10-21 WO PCT/CN2017/107205 patent/WO2018171183A1/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105742768A (en) * | 2014-11-28 | 2016-07-06 | 青岛海尔电子有限公司 | Band-pass filter, high-order band-pass filter and performance analysis method |
CN105990632A (en) * | 2015-01-28 | 2016-10-05 | 青岛海尔电子有限公司 | Three-pass band filter |
CN107086347A (en) * | 2016-02-16 | 2017-08-22 | 青岛海尔电子有限公司 | Four mould defects ground formula resonator |
CN206673066U (en) * | 2017-03-18 | 2017-11-24 | 深圳市景程信息科技有限公司 | The passband filter structure of multimode three |
Non-Patent Citations (1)
Title |
---|
BIAO PENG等: ""Compact Quad-Mode Bandpass Filter Based on Quad-Mode DGS Resonator"", 《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018171183A1 (en) * | 2017-03-18 | 2018-09-27 | 深圳市景程信息科技有限公司 | Quad-mode defected ground structure resonator-based triple-passband filter structure |
WO2018171185A1 (en) * | 2017-03-18 | 2018-09-27 | 深圳市景程信息科技有限公司 | Triple-passband filter structure having four transmission zeros |
CN112840507A (en) * | 2018-10-19 | 2021-05-25 | 双信电机株式会社 | Filter |
CN112840507B (en) * | 2018-10-19 | 2022-06-03 | 双信电机株式会社 | Filter |
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