CN106953018A - Translucent perovskite solar cell and its manufacture method - Google Patents

Translucent perovskite solar cell and its manufacture method Download PDF

Info

Publication number
CN106953018A
CN106953018A CN201710258429.4A CN201710258429A CN106953018A CN 106953018 A CN106953018 A CN 106953018A CN 201710258429 A CN201710258429 A CN 201710258429A CN 106953018 A CN106953018 A CN 106953018A
Authority
CN
China
Prior art keywords
pbi
layer
type layer
module
conductive glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710258429.4A
Other languages
Chinese (zh)
Inventor
周德明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN201710258429.4A priority Critical patent/CN106953018A/en
Publication of CN106953018A publication Critical patent/CN106953018A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The present invention relates to optoelectronic device technology field, there is provided a kind of translucent perovskite solar cell and its manufacture method.Perovskite photovoltaic cell manufacture of the present invention includes step：S1, on one piece of ITO electro-conductive glass it is sequentially depositing P-type layer and PbI2, obtain module 1；S2, on another piece of electro-conductive glass it is sequentially depositing N-type layer and CH3NH3I, obtains module 2；S3, module 1 and module 2 PbI2With CH3NH3I3Opposite laminating, and fixed with fixture；S4, heating anneal, complete device and prepare.Translucent perovskite method for manufacturing solar battery produced by the present invention is extremely simple, has glass-encapsulated effect by oneself, and device stability is good.

Description

Translucent perovskite solar cell and its manufacture method
Technical field
The present invention relates to translucent perovskite method for manufacturing solar battery, belong to optoelectronic device technology field.
Background technology
Translucent solar cell is while generating electricity, it is ensured that daylighting requirement within doors, it is adaptable to mansion window, outer The building structure such as wall, skylight and roof.Mg, Al, Ag or their conjunction being used the translucent perovskite solar cell of tradition more Gold is transparent due to needing electrode to need as transparency electrode, so the very thin thickness of metal electrode, typically more than ten or tens of Between nanometer.But it is due to CH3NH3PbI3The precipitation of calcium titanium ore bed iodine under water oxygen effect, easily causes thin metal electrode Corrosion, so as to cause destructive destruction to device performance, reduces the life-span of battery.
On the other hand, the CH of traditional organic inorganic hybridization perovskite solar cell3NH3PbI3Perovskite light-absorption layer Manufacture is prepared using single hot evaporation or whole soln method.The problem of being prepared using thermal evaporation deposition be mainly manifested in due to CH3NH3I molecular weight is smaller, CH during hot evaporation3NH3The I directions of growth are poor, be difficult to control, while easily cause material and The pollution of plated film cavity, the making per primary cell is required for using new CH3NH3I materials, waste of material is more.And whole soln method Perovskite photosensitive layer is made, the problem of photosensitive layer thickness is difficult accurate monitoring is there is, and photosensitive layer thickness is for the property of battery It can influence most important.Photosensitive layer thickness can ensure enough light absorbs when big, but too thick photosensitive layer can also influence electricity The collection of lotus.Particularly in translucent field of solar energy, more need to be accurately controlled the thickness of photosensitive layer so that translucent electricity Balance between pond light transmittance and the energy conversion efficiency of battery is optimal.
The content of the invention
The problem of in order to solve in the translucent perovskite photovoltaic cell described in background technology, the present invention provides a kind of new Translucent perovskite solar cell and its manufacture method.
To achieve the above object, the technical solution adopted in the present invention is:
A kind of translucent perovskite solar cell, it is characterised in that battery is by two layers of ITO electro-conductive glass and is clipped in ITO and leads P-type layer, CH between electric glass3NH3PbI3Light-absorption layer and N layers of composition, described P-type layer is polyTPD, PEDOT:PSS、 One kind in NiO, CuI, described N-type layer is TiO2、ZnO、SnO2In one kind, described CH3NH3PbI3Light-absorption layer is semi-transparent Bright structure, thickness is in 50-200 nm.
The preparation of device includes step：
S1, on one piece of ITO electro-conductive glass it is sequentially depositing P-type layer and PbI2, obtain module 1, wherein PbI2Thickness is in 50-100 nm；
S2, on another piece of electro-conductive glass it is sequentially depositing N-type layer and CH3NH3I, obtains module 2；
S3, module 1 and module 2 PbI2Face and CH3NH3I fits in face in opposite directions, and with being fixedly clamped above and below fixture；
S4, heating anneal, complete device and prepare；
Further, the preparation of module 1 includes step in s1 steps：
(1) ITO electro-conductive glass is cleaned；
(2) one layer of P-type layer is grown on ITO electro-conductive glass, P-type layer thickness is in 10-50 nm；
(3) PbI is deposited in P-type layer2Layer：PbI is deposited using the method for vacuum thermal evaporation2Layer；In vacuum coating equipment, 10-4 Pa Under vacuum condition, one layer of PbI is grown in P-type layer by the method for thermal evaporation2Layer, PbI2Sedimentation rate is controlled in 0.05-0.1 Nm/s, deposit thickness is 50-100 nm, and evaporation rate and thickness are monitored using quartz crystal；
Further, the preparation of module 2 includes step in s2 steps：
(1) ITO electro-conductive glass is cleaned；
(2) one layer of N-type layer is grown on ITO electro-conductive glass, N-type layer thickness is in 20-50 nm；
(3) one layer of CH is deposited in N-type layer3NH3I：Configure CH3NH3I precursor solution, the solvent used is dimethyl formyl One kind in amine (DMF) or dimethyl sulfoxide (DMSO) (DMSO), solution concentration is 1-3 M；Under glove box inert gas shielding, use Sol evenning machine rotary coating CH3NH3I precursor solution, rotating speed be vulgar 500 rpm, 5 seconds time, high speed 1000-3000 rpm, Time 30-50 second；
Further, step s3 and step s4 include：By the PbI of module 1 and module 22Face and CH3NH3I is opposite in glove box Laminating, after being fixed with fixture, puts and anneals on hot plate, promotes PbI2And CH3NH3I phase counterdiffusion, is formed homogeneous Perovskite thin film, and complete the making of device.
Further, heating-up temperature is 90-110 DEG C in step s4, and annealing time is 30-120 minutes.
Compared with conventional art, the positive effect of the present invention with：
1st, the present invention prepares PbI using thermal evaporation deposition2, the PbI prepared with solwution method2Film is compared, the heat steaming that the present invention is used PbI prepared by plating method2The smooth densification of film, to form the CH of good quality3NH3PbI3Perovskite thin film provides the foundation；Simultaneously It is easier to realize PbI2And CH3NH3PbI3The precise control of the thickness of perovskite thin film, is conducive to adjusting the light of translucent battery Transmitance and energy conversion efficiency.2nd, the present invention prepares CH using solution process3NH3I layers, CH is prepared with thermal evaporation deposition3NH3I layers Compare, saved the use of material, it is to avoid the pollution of vacuum coating equipment cavity.3rd, the translucent perovskite for preparing of the present invention is too The upper/lower electrode of positive energy battery is ITO, and light transmission is good, and corrosion resistance is good, and without additionally prepare semitransparent electrode, favorably In the light transmittance and life-span that improve translucent battery.4th, translucent perovskite solar cell prepared by the present invention is equal up and down Glass-encapsulated effect is carried, the life-span of battery is improved.
Brief description of the drawings
Fig. 1 is the device architecture schematic diagram of the perovskite photovoltaic cell of the present invention.
Fig. 2 is perovskite photovoltaic cell making step schematic diagram of the invention.
Embodiment
Embodiment one
As shown in Figure 1, more specifically, device architecture is ITO/ PEDOT to the structure of translucent perovskite solar cell:PSS (40nm)/CH3NH3PbI3(200 nm)/TiO2(10 nm)/ITO.The preparation process of device is as shown in Fig. 2 including following step Suddenly：
(1) ITO electro-conductive glass is cleaned successively using acetone, glass cleaner, in acetone, deionized water, isopropanol at each ultrasound Reason 10 minutes, ultra violet lamp is handled 10 minutes after nitrogen drying；
(2) the rotary coating PEDOT on one piece of ITO electro-conductive glass:PSS is used as P-type layer；The revolution per second of rotary coating rotating speed 3500, Rotation 30 seconds, then anneals 20 minutes in 120 DEG C of heating plates；
(3) in PEDOT:PbI is deposited on PSS2Layer；In vacuum coating equipment, 10-4Under Pa vacuum conditions, pass through the method for thermal evaporation One layer of PbI is grown in P-type layer2Layer, PbI2Sedimentation rate control is in 0.1 nm/s, and deposit thickness is 100 nm, evaporation rate and Thickness is monitored using quartz crystal；
(4) one layer of 10 nm TiO is grown by technique for atomic layer deposition on another piece of electro-conductive glass2It is used as N-type layer；
(5) one layer of CH is deposited in N-type layer3NH3I：Under glove box inert gas shielding, the M of sol evenning machine rotary coating 1 is used CH3NH3I DMF precursor solutions, rotating speed is the rpm of low speed 500, is rotated 5 seconds, at a high speed 1000 rpm, is rotated 30 seconds；
(6) by the PbI of module 1 and module 22Face and CH3NH3I fits in opposite directions in glove box, and with fixture by module 1 and mould Block is fixedly clamped about 2, is placed in 100 DEG C of heating plate and anneals, promotes PbI2And CH3NH3I phase counterdiffusion, anneals 90 minutes Afterwards, homogeneous perovskite thin film is formed, and completes the making of device.
Embodiment two
The structure of translucent perovskite solar cell is ITO/NiO (20 nm)/CH3NH3PbI3(100 nm)/ZnO(30 nm)/ITO(100 nm).The preparation of device includes procedure below：
(1) ITO electro-conductive glass is cleaned successively using acetone, glass cleaner, in acetone, deionized water, isopropanol at each ultrasound Reason 10 minutes, ultra violet lamp is handled 10 minutes after nitrogen drying；
(2) one layer of 20 nm of technique for atomic layer deposition growth NiO is used as P-type layer on one piece of ITO electro-conductive glass；
(3) PbI is deposited on NiO2Layer：In vacuum coating equipment, 10-4Under Pa vacuum conditions, by the method for thermal evaporation in P-type layer One layer of PbI of upper growth2Layer, PbI2Sedimentation rate control is 50 nm in 0.05 nm/s, deposit thickness, and evaporation rate and thickness make It is monitored with quartz crystal；
(4) 30 nm ZnO is obtained by equal glue machine rotary coating ZnO precursor solution on another piece of ITO electro-conductive glass It is used as N-type layer；
(5) one layer of CH is deposited in N-type layer3NH3I：Under glove box inert gas shielding, sol evenning machine rotary coating is used CH3NH3I concentration be 3 M DMSO precursor solutions, rotating speed be vulgar 500 rpm, 5 seconds time, at a high speed 3000 rpm, when Between 50 seconds；
(6) by the PbI of module 1 and module 22Face and CH3NH3I fits in opposite directions in glove box, and with fixture by module 1 and mould Block is fixedly clamped about 2, is placed in 90 DEG C of heating plate and anneals, promotes PbI2And CH3NH3I phase counterdiffusion, anneals 60 minutes Afterwards, homogeneous perovskite thin film is formed, and completes the making of device.

Claims (4)

1. translucent perovskite solar cell, it is characterised in that battery is by two layers of ITO electro-conductive glass and is clipped in ITO conductions P-type layer, CH between glass3NH3PbI3Light-absorption layer and N layers of composition, described P-type layer is polyTPD, PEDOT:PSS、NiO、 One kind in CuI, described N-type layer is TiO2、ZnO、SnO2In one kind, described CH3NH3PbI3Light-absorption layer is translucent knot Structure, thickness is in 50-200 nm.
2. translucent perovskite method for manufacturing solar battery as claimed in claim 1, it is characterised in that the preparation bag of device Include step：
S1, on one piece of ITO electro-conductive glass it is sequentially depositing P-type layer and PbI2, obtain module 1, wherein PbI2Thickness is in 50-100 nm；
S2, on another piece of electro-conductive glass it is sequentially depositing N-type layer and CH3NH3I, obtains module 2；
S3, module 1 and module 2 PbI2Face and CH3NH3I fits in face in opposite directions, and is clamped module 1 and module about 2 with fixture It is fixed；
S4, heating anneal, complete device and prepare.
3. the manufacture method of translucent perovskite solar cell as claimed in claim 2, it is characterised in that mould in s1 steps The preparation of block 1 includes step：
(1) ITO electro-conductive glass is cleaned；
(2) one layer of P-type layer is grown on ITO electro-conductive glass, P-type layer thickness is in 10-50 nm；
(3) PbI is deposited in P-type layer2Layer：PbI is deposited using the method for vacuum thermal evaporation2Layer；In vacuum coating equipment, 10-4 Pa Under vacuum condition, one layer of PbI is grown in P-type layer by the method for thermal evaporation2Layer, PbI2Sedimentation rate is controlled in 0.05-0.1 Nm/s, deposit thickness is 50-100 nm, and evaporation rate and thickness are monitored using quartz crystal.
4. the manufacture method of translucent perovskite solar cell as claimed in claim 2, it is characterised in that mould in s2 steps The preparation of block 2 includes step：
(1) ITO electro-conductive glass is cleaned；
(2) one layer of N-type layer is grown on ITO electro-conductive glass, N-type layer thickness is in 20-50 nm；
(3) one layer of CH is deposited in N-type layer3NH3I：Configure CH3NH3I precursor solution, the solvent used is dimethyl formyl One kind in amine (DMF) or dimethyl sulfoxide (DMSO) (DMSO), solution concentration is 1-3 M；Under glove box inert gas shielding, use Sol evenning machine rotary coating CH3NH3I precursor solution, rotating speed be vulgar 500 rpm, 5 seconds time, high speed 1000-3000 rpm, Time 30-50 second；
Translucent perovskite method for manufacturing solar battery as claimed in claim 2, it is characterised in that step s3 and step s4 Including：By module 1 and the PbI2 faces of module 2 and CH3NH3I fits in opposite directions in glove box, after being fixed with fixture, is placed on heating plate Upper annealing, promotes PbI2And CH3NH3I3Phase counterdiffusion, form homogeneous perovskite thin film, and complete the making of device； Described heating anneal temperature is 90-110 DEG C, and annealing time is 30-120 minutes.
CN201710258429.4A 2017-04-19 2017-04-19 Translucent perovskite solar cell and its manufacture method Pending CN106953018A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710258429.4A CN106953018A (en) 2017-04-19 2017-04-19 Translucent perovskite solar cell and its manufacture method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710258429.4A CN106953018A (en) 2017-04-19 2017-04-19 Translucent perovskite solar cell and its manufacture method

Publications (1)

Publication Number Publication Date
CN106953018A true CN106953018A (en) 2017-07-14

Family

ID=59477657

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710258429.4A Pending CN106953018A (en) 2017-04-19 2017-04-19 Translucent perovskite solar cell and its manufacture method

Country Status (1)

Country Link
CN (1) CN106953018A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110473972A (en) * 2019-06-27 2019-11-19 南京工业大学 A kind of preparation method and its photovoltaic applications based on the translucent perovskite thin film of anion exchange
CN112038457A (en) * 2020-09-11 2020-12-04 扬州乾照光电有限公司 Flip red light LED chip and manufacturing method thereof
CN112234146A (en) * 2020-11-05 2021-01-15 华中科技大学 Preparation method of perovskite light absorption layer, perovskite solar cell and preparation method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104600195A (en) * 2014-12-22 2015-05-06 国家纳米科学中心 Perovskite solar battery and preparation method thereof
CN105304821A (en) * 2014-07-15 2016-02-03 中国科学院苏州纳米技术与纳米仿生研究所 Manufacturing method of perovskite film and solar cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105304821A (en) * 2014-07-15 2016-02-03 中国科学院苏州纳米技术与纳米仿生研究所 Manufacturing method of perovskite film and solar cell
CN104600195A (en) * 2014-12-22 2015-05-06 国家纳米科学中心 Perovskite solar battery and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110473972A (en) * 2019-06-27 2019-11-19 南京工业大学 A kind of preparation method and its photovoltaic applications based on the translucent perovskite thin film of anion exchange
CN112038457A (en) * 2020-09-11 2020-12-04 扬州乾照光电有限公司 Flip red light LED chip and manufacturing method thereof
CN112234146A (en) * 2020-11-05 2021-01-15 华中科技大学 Preparation method of perovskite light absorption layer, perovskite solar cell and preparation method

Similar Documents

Publication Publication Date Title
CN108321298B (en) A kind of high efficiency planar heterojunction perovskite thin film solar battery and preparation method
CN109103338B (en) Preparation method of large-area perovskite thin film and battery pack thereof
CN110246967B (en) Method for preparing flexible perovskite solar cell at low temperature
CN105895807A (en) Preparation method of TiO2-dopted film
CN107369764A (en) A kind of perovskite solar cell and preparation method for adulterating lead acetate trihydrate
CN105702864A (en) High quality perovskite thin film, solar cell and preparation method thereof
CN107946464A (en) A kind of perovskite solar cell based on barium titanate interface-modifying layer and preparation method thereof
CN109755394B (en) Method for preparing perovskite solar cell by applying air knife coating
CN112490363B (en) Preparation method of perovskite solar cell based on magnetron sputtering zinc oxide/tin dioxide double electron transmission layer
CN106953018A (en) Translucent perovskite solar cell and its manufacture method
CN106159095A (en) The preparation method of a kind of perovskite solaode and perovskite solaode
CN108321299B (en) A kind of unleaded perovskite thin film of low-dimensional and its unleaded perovskite preparation method of solar battery
CN110176539A (en) A kind of preparation method of the stable efficient perovskite solar battery of full spectrum light
CN105428535A (en) Manufacturing method for thin film crystal silicon perovskite heterojunction solar cell
CN109904330A (en) One kind being based on passivating material Me4The method of NBr preparation tin-lead hydridization perovskite solar battery
CN105810831A (en) Lead-tin hybrid perovskite thin film, and preparation method and application therefor
CN106953014A (en) A kind of hybrid solar cell structure and preparation method using CuPc as hole transmission layer
CN109148697A (en) A kind of preparation method of perovskite solar battery
CN108666424B (en) Perovskite solar cell prepared by taking methylamine acetate room-temperature molten salt as green solvent, and method and application thereof
CN107170894B (en) A kind of perovskite solar battery and preparation method thereof
CN109065719A (en) A kind of method and its application preparing lead halide perovskite thin film
CN109817811B (en) Annealing-free and anti-solvent-free perovskite photovoltaic device and preparation method thereof
CN105449103B (en) A kind of film crystal silicon perovskite heterojunction solar battery and preparation method thereof
CN106848065A (en) A kind of plane perovskite photovoltaic cell using metal phthalocyanine compound as electron transfer layer
CN109755392B (en) Preparation method of organic-inorganic hybrid perovskite solar cell

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20170714