CN106952977B - 一种太阳能电池封装结构 - Google Patents

一种太阳能电池封装结构 Download PDF

Info

Publication number
CN106952977B
CN106952977B CN201710215162.0A CN201710215162A CN106952977B CN 106952977 B CN106952977 B CN 106952977B CN 201710215162 A CN201710215162 A CN 201710215162A CN 106952977 B CN106952977 B CN 106952977B
Authority
CN
China
Prior art keywords
electrode
photoelectric conversion
electrode group
convex lens
conversion material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710215162.0A
Other languages
English (en)
Other versions
CN106952977A (zh
Inventor
韩少茹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Noel Construction Group Co.,Ltd.
Original Assignee
Yangzhou Lighting Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yangzhou Lighting Group Co Ltd filed Critical Yangzhou Lighting Group Co Ltd
Priority to CN201710215162.0A priority Critical patent/CN106952977B/zh
Priority to CN201810943581.0A priority patent/CN109087959B/zh
Publication of CN106952977A publication Critical patent/CN106952977A/zh
Application granted granted Critical
Publication of CN106952977B publication Critical patent/CN106952977B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

一种太阳能电池封装结构，包括：光入射层，用于太阳光的入射；光电转换材料，用于接受太阳光的照射生成载流子；密封材料，设置于光入射层与光电转换材料之间；上电极，其设置于光电转换材料上表面；下电极，设置于光电转换材料下表面；上电极包括位于上端的第一电极组以及位于下端的第二电极组；第一电电极组与第二电极组相对设置，中间形成间隔；密封材料内部设置多个凸透聚光结构，凸透聚光结构设置于上电极正上方，其YZ竖截面最长边与光电转换材料Y轴长度相等；设置所述凸透聚光结构距离上电极的高度，使其焦点位于所述间隔内。

Description

一种太阳能电池封装结构
技术领域
本发明涉及一种封装结构，尤其是涉及一种太阳能电池的封装结构。
背景技术
随着人类不断开发新能源，太阳能逐渐被人类应用到多个领域当中，太阳能发电是一种新型能源，具有环保、节能、取之不尽用之不竭等特点，太阳能电池组件是太阳能发电系统中的核心部分，也是太阳能发电系统中价值最高的部分，其作用是将太阳能转化为电能，而太阳能电池组件封装工艺好坏直接影响太阳能电池的使用寿命。
随着人类的科技进步全球对于石油、天然气等自然能源资源的依赖日益加重，而全球能源需求的不断增长，能源、环境和气候变暖等问题日益突出。开发和加大可再生的绿色能源的使用已经刻不容缓。太阳能光伏、生物能和风能等绿色能源已经或正在成为传统能源最好的替代技术。
太阳能光伏技术是基于半导体的光生伏特效应原理，利用太阳能电池将太阳光能直接转化为电能。其最核心器件为太阳能电池。当太阳光照射到太阳能电池上时， 电池吸收光子能量，产生电子-空穴对。在电池内建电场作用下，光生电子和空穴被分离， 电池两端出现异号电荷的积累，即产生“光生电压”，在内建电场的两侧引出电极并接上负载，则负载就有“光生”电流通过，从而获得功率输出。
提高太阳能电池的工业转化效率，是太阳能产业一直不变的追求。太阳能电池的性能是由该电池的光电特性来确定的，而电池性能的损失主要来源于光学损失和电学损失。太阳能电池光学损失主要包括电池前表面反射损失、以及电极阻挡导致的接触栅线的阴影损失。其中，通过绒面和减反射膜技术可获得相当低的光反射，减小电池前表面的反射损失。
对于太阳能电池的电极阻挡导致的光学损失，现有技术主要通过将入射到电极的光线折射或者散射到电极以外的区域，从而增加有效光。但是，部分折射或者散射的光线仍可能照射到电极上。为了解决上述问题，在先申请提出了在电极宽度方向设置间隔结构，通过在封装材料中设置聚焦结构将由照射到电极的光线聚焦到间隔内，避免光线照射电极导致的损失。但是，由于电极的宽度通常都是设置为很窄的结构，在其中间设置间隔对于制作工艺的要求较高。
发明内容
本发明提供了一种改进的太阳能电池封装结构以及太阳能电池，能够降低对于制作工艺的要求。
作为本发明的一个方面，提供了一种太阳能电池封装结构，包括：光入射层，用于太阳光的入射；光电转换材料，其用于接受太阳光的照射生成载流子；密封材料，其设置于光入射层与光电转换材料之间；上电极，其设置于光电转换材料上表面；下电极，其设置于光电转换材料下表面；其特征在于：所述上电极包括位于上端的第一电极组以及位于下端的第二电极组；所述第一电电极组与第二电极组对应设置，中间形成间隔；密封材料内部设置多个凸透聚光结构，凸透聚光结构设置于上电极正上方，其YZ竖截面最长边与光电转换材料Y轴长度相等；设置所述凸透聚光结构距离上电极的高度，使其焦点位于所述间隔内。
优选的，所述密封材料为乙烯-乙酸乙烯脂共聚物(EVA)、聚乙烯醇缩丁醛(PVB)、聚碳酸酯(PC)、聚甲基丙烯酸甲酯(PMMA)、聚氯乙烯(PVC)、低密度聚乙烯(LDPE)、聚丙烯(PP)、聚苯乙 烯(PS)、TPU、硅酮、离子交联聚合物、光固树脂中的一种或者几种。
优选的，所述凸透聚光结构的材料为乙烯-乙酸乙烯脂共聚物(EVA)、聚乙烯醇缩丁醛(PVB)、聚碳酸酯(PC)、聚甲基丙烯酸甲酯(PMMA)、聚氯乙烯(PVC)、低密度聚乙烯(LDPE)、聚丙烯(PP)、聚苯乙 烯(PS)、TPU、硅酮、离子交联聚合物、光固树脂中的一种或者几种。
优选的，所述凸透聚光结构材料的折射率大于密封材料的折射率。
优选的，还包括设置于底部的光反射层。
优选的，上电极以及下电极的材料包括TCO材料或导电金属材料。
优选的，所述光入射面层的内表面设置表面纹理。
优选的，所述间隔中点位于凸透镜主光轴的延长线上，使所述凸透聚光结构的汇聚光照射到所述间隔中。
优选的，包括设置于凸透聚光结构与上电极之间的散射结构，所述散射结构具有中间设置第二间隔，所述第二间隔宽度设置为所述凸透聚光结构的聚焦面与该散射结构横截面重叠部分的宽度。
优选的，所述光入射层为玻璃。
优选的，所述光电转换材料为晶体硅。
作为本发明的另外一个方面，提供一种太阳能电池，其包括上述之一的太阳能电池封装结构。
附图说明
图1是本发明实施例的太阳能电池封装结构正面示意图。
图2是本发明实施例的太阳能电池封装结构的电极结构的俯视图。
图3是本发明优选实施例的太阳能电池封装结构的局部侧视图。
具体实施方式
为了更清楚地说明本发明的技术方案，下面将使用实施例对本发明进行简单地介绍，显而易见地，下面描述中的仅仅是本发明的一个实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些实施例获取其他的技术方案，也属于本发明的公开范围。
本发明实施例的太阳能电池封装结构，如图1、图2、图3所示，从下至上依次包括背板100，密封材料200，下电极300，光电转换材料400，上电极500，密封材料600，光入射层700。
背板100位于太阳能电池非受光一侧的表面，用于向太阳能电池提供结构支持。光入射层700设置于太阳能电池的受光侧，用于太阳光的入射。可以使用现有的常规背板和前板材料，例如可以是玻璃、塑料、金属等材料。在优选的实施例中，使用玻璃作为太阳能电池板的背板100以及光入射层700的材料。
密封材料为太阳能电池线路装备提供结构支撑和定位，同时隔绝环境以及外界因素对于光电转换材料以及线路的影响。密封材料的位置处在太阳能电池组件的中间，与光入射层700及背板100相互黏接，包裹住光电转换材料400，其包括位于光电装换材料400下方的密封材料200以及光电转换材料400上方的密封材料600。密封材料可以使用乙烯-乙酸乙烯脂共聚物(EVA)、聚乙烯醇缩丁醛(PVB)、聚碳酸酯(PC)、聚甲基丙烯酸甲酯(PMMA)、聚氯乙烯(PVC)、低密度聚乙烯(LDPE)、聚丙烯(PP)、聚苯乙 烯(PS)、TPU、硅酮、离子交联聚合物、光固树脂中的一种或者几种。
光电转换材料400是利用光电转换效应把光能直接转变为电能的半导体器件，太阳能照射到光电转换材料400后产生电子—空穴对，电子—空穴对在空间电荷区中产生后，立即被内建电场分离，光生电子被推进n区，光生空穴被推进P区。故此，在p-n结两侧产生了正、负电荷的积累，形成与内建电场相反的光生电场，在PN结开路的情况下，光生电流和正向电流相等时，PN结两端建立起稳定的电势差，成为开路电压，从而使PN结起到电源的作用。可以使用现有的晶硅材料作为光电转换材料400，例如单晶硅，多晶硅，薄膜硅和非晶硅等。
太阳能电池的电极包括下电极300以及上电极500，其中，下电极300设置于光电转换材料400下表面，上电极500设置于光电转换材料400上表面，收集来自光电转换材料400的光生成载流子。上电极500以及下电极300可以是包含导电性材料的单层结构，也可以为多层结构。
电极材料可以是导电金属材料由包含银或铝、铜、镍、锡、 金等或它们的合金等的导电性材料制成，也可以是例如TCO材料。除了包含这些导电性材料的层以外，还可以具有包含透光性导电氧化物的层，例如氧化锌，氧化锡等。
如图2所示，上电极500包括相对设置的第一电极组501以及第二电极组502。第一电极组501设置于光电转换材料400上表面的上端，第二电极组501设置于光电转换材料400上表面的下端，其X轴座标相同，长度小于光电转换材料400Y轴长度的一半，从而第一电极组501和第二电极组502之间形成间隔503。
密封材料600内部设置与上电极500对应的多个凸透聚光结构601，凸透聚光结构601设置于上电极500的正上方，其YZ竖截面为凸透镜结构，YZ竖截面最长边与光电转换材料400Y轴长度相等。凸透聚光结构601的材料可以是乙烯-乙酸乙烯脂共聚物(EVA)、聚乙烯醇缩丁醛(PVB)、聚碳酸酯(PC)、聚甲基丙烯酸甲酯(PMMA)、聚氯乙烯(PVC)、低密度聚乙烯(LDPE)、聚丙烯(PP)、聚苯乙 烯(PS)、TPU、硅酮、离子交联聚合物、光固树脂中的一种或者几种。选择凸透聚光结构601的材料时，使其折射率大于密封材料600的材料，从而能够形成聚焦，例如当使用EVA或者PVB作为密封材料600时，可以使用PVC作为凸透聚光结构601的材料。
设置凸透聚光结构601距离上电极500的高度，使其凸透聚光结构601的焦点与上电极500位于同一平面，间隔503的中点位于凸透聚光结构601主光轴的延长线上，使凸透聚光结构601的汇聚光照射到间隔503中，从而将照射到上电极500的光线聚焦，避免折射或者散射时，光线照射到上电极500导致的光学损失。
通过本发明的实施例，通过凸透聚光结构601和上电极500的设置，在上电极500的长度方向上设置间隔，将照射到电极的光线，通过聚焦结构聚焦到上电极500的长度方向，一方面避免了避免光线照射电极导致的损失，同时由于电极长度方向设置间隔相对简单，对于工艺要求相对较低。
优选的实施例中，可以如图3所示，在凸透聚光结构601与组电极501之间设置散射结构602，散射结构602中间设置第二间隔603，第二间隔603的宽度设置为凸透聚光结构601的聚焦面与该散射结构602横截面重叠部分的宽度，从而能够进一步将聚焦面之外的光线散射到光电转换材料中。
本发明中描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。凡在本发明的精神和原则之内所作的任何修改、等同替换、改进等，均包含在本发明的保护范围内。

Claims (1)

1.一种太阳能电池封装结构，包括：光入射层，用于太阳光的入射；光电转换材料，其用于接受太阳光的照射生成载流子；密封材料，其设置于光入射层与光电转换材料之间；上电极，其设置于光电转换材料上表面；下电极，其设置于光电转换材料下表面；其特征在于：所述上电极包括位于上端的第一电极组以及位于下端的第二电极组；所述第一电极组的各电极之间存在间隔，所述第二电极组的各电极之间存在间隔；所述第一电极组与第二电极组相对设置，中间形成间隔，第一电极组与第二电极组之间的间隔位于上电极的长度方向上；密封材料内部设置多个凸透聚光结构，凸透聚光结构设置于上电极正上方，其长度方向平行于上电极的长度方向；在YZ平面最长边与光电转换材料Y轴长度相等，将照射到上电极的光线，通过凸透聚光结构聚焦到上电极的长度方向；设置所述凸透聚光结构距离上电极的高度，使其焦点位于所述第一电极组与第二电极组之间的间隔内；在凸透聚光结构与上电极之间设置散射结构，散射结构中间设置间隔，所述散射结构中间的间隔的宽度设置为凸透聚光结构的聚焦面与该散射结构横截面重叠部分的宽度。
CN201710215162.0A 2017-04-02 2017-04-02 一种太阳能电池封装结构 Active CN106952977B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201710215162.0A CN106952977B (zh) 2017-04-02 2017-04-02 一种太阳能电池封装结构
CN201810943581.0A CN109087959B (zh) 2017-04-02 2017-04-02 太阳能电池封装结构

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710215162.0A CN106952977B (zh) 2017-04-02 2017-04-02 一种太阳能电池封装结构

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201810943581.0A Division CN109087959B (zh) 2017-04-02 2017-04-02 太阳能电池封装结构

Publications (2)

Publication Number Publication Date
CN106952977A CN106952977A (zh) 2017-07-14
CN106952977B true CN106952977B (zh) 2019-05-10

Family

ID=59474188

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201810943581.0A Expired - Fee Related CN109087959B (zh) 2017-04-02 2017-04-02 太阳能电池封装结构
CN201710215162.0A Active CN106952977B (zh) 2017-04-02 2017-04-02 一种太阳能电池封装结构

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201810943581.0A Expired - Fee Related CN109087959B (zh) 2017-04-02 2017-04-02 太阳能电池封装结构

Country Status (1)

Country Link
CN (2) CN109087959B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107731934A (zh) * 2017-11-22 2018-02-23 国家纳米科学中心 一种光电转换器及其转换方法
CN114975666A (zh) * 2022-05-20 2022-08-30 中能创光电科技(常州)有限公司 图案化的光伏组件

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4834805A (en) * 1987-09-24 1989-05-30 Wattsun, Inc. Photovoltaic power modules and methods for making same
GB0227718D0 (en) * 2002-11-28 2003-01-08 Eastman Kodak Co A photovoltaic device and a manufacturing method hereof
JP5326731B2 (ja) * 2009-03-26 2013-10-30 大日本印刷株式会社 有機薄膜太陽電池
CN102034932B (zh) * 2010-10-27 2012-02-15 浙江大学 一种自聚光的聚合物太阳能电池
KR101429106B1 (ko) * 2012-02-29 2014-08-14 아주대학교산학협력단 집광용 마이크로렌즈 어레이를 구비한 태양전지
CN203013770U (zh) * 2012-07-05 2013-06-19 夏普 一种具有增大受光面积的光伏组件
CN103646982B (zh) * 2013-12-11 2016-07-06 中国科学院光电技术研究所 一种用于薄膜太阳能电池的陷光结构及制作方法
CN203871344U (zh) * 2014-01-28 2014-10-08 桂林吉阳新能源有限公司 太阳能电池片
CN204167328U (zh) * 2014-10-30 2015-02-18 晶澳太阳能有限公司 一种具有次主栅线的太阳能电池正面栅极结构
CN204991723U (zh) * 2015-08-18 2016-01-20 广东爱康太阳能科技有限公司 一种太阳能电池电极
CN205439551U (zh) * 2016-02-26 2016-08-10 山西潞安太阳能科技有限责任公司 一种太阳能电池用印刷网版
CN205406534U (zh) * 2016-03-23 2016-07-27 锦州华昌光伏科技有限公司 太阳能电池片
CN106206758B (zh) * 2016-08-31 2017-08-01 九州方园新能源股份有限公司 一种太阳能电池板组件及加工工艺

Also Published As

Publication number Publication date
CN106952977A (zh) 2017-07-14
CN109087959B (zh) 2021-08-17
CN109087959A (zh) 2018-12-25

Similar Documents

Publication Publication Date Title
US8916766B2 (en) Solar concentrator and photoelectric conversion structure
CN202930413U (zh) 太阳能模组装置
US20120176077A1 (en) Solar cell module having white back sheet
US20030029497A1 (en) Solar energy converter using optical concentration through a liquid
CN101923209B (zh) 集光装置
US20130000696A1 (en) Photovoltaic systems and methods
KR20080021652A (ko) 복수의 광발전 영역을 사용하는 통합된 솔라 셀 시스템 및방법
CN110931584A (zh) 一种折板形光伏组件与其使用的正面玻璃以及光伏系统
CN106952977B (zh) 一种太阳能电池封装结构
CN103165711A (zh) 封装结构及具有该封装结构的太阳能电池
EP1407494A1 (en) Solar energy converter using optical concentration through a liquid
AU2002259326A1 (en) Solar energy converter using optical concentration through a liquid
CN201584423U (zh) 新型太阳能电池组件
CN109192803B (zh) 一种太阳能电池组件
CN102157593A (zh) 一种聚光发电系统
CN214152915U (zh) 太阳能电池组件
CN106847961B (zh) 一种太阳能电池封装结构以及太阳能电池
CN102263156A (zh) 一种提高太阳能光伏电池转换效率的技术
CN104952948A (zh) 一种柱形太阳能电池组件
CN205264718U (zh) 一种屋顶应用高效光伏组件
KR101562191B1 (ko) 고효율 태양전지
CN209729927U (zh) 一种高透光柔性光伏组件
CN107146819B (zh) 新型薄膜太阳电池
CN208970536U (zh) 一种双面双玻光伏组件
US20150107649A1 (en) Light Deflecting Layer For Photovoltaic Solar Panels

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20190412

Address after: 225000 No. 99 Guoji West Road, Zaiqiao Town, Gaoyou City, Yangzhou City, Jiangsu Province

Applicant after: Yangzhou Lighting Group Co., Ltd.

Address before: 055550 No. 21, five North Street, Ma Jia Zhuang village, Jia Jia Kou Town, Ningjin, Xingtai, Hebei

Applicant before: Han Shaoru

GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: 225000 Guo Ji Xi Road No. 99, Gaoyou City, Yangzhou City, Jiangsu

Patentee after: Noel Lighting Group Co., Ltd

Address before: 225000 Guo Ji Xi Road No. 99, Gaoyou City, Yangzhou City, Jiangsu

Patentee before: YANGZHOU NUOER LIGHTING GROUP Co.,Ltd.

CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: 225000 No. 99 Guoji West Road, Zaiqiao Town, Gaoyou City, Yangzhou City, Jiangsu Province

Patentee after: Noel Construction Group Co.,Ltd.

Address before: 225000 No. 99 Guoji West Road, Zaiqiao Town, Gaoyou City, Yangzhou City, Jiangsu Province

Patentee before: Noel Lighting Group Co.,Ltd.