CN106950415B - Current measurement method and sensor system - Google Patents
Current measurement method and sensor system Download PDFInfo
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- CN106950415B CN106950415B CN201710186032.9A CN201710186032A CN106950415B CN 106950415 B CN106950415 B CN 106950415B CN 201710186032 A CN201710186032 A CN 201710186032A CN 106950415 B CN106950415 B CN 106950415B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
Abstract
The invention relates to the field of current sensors, in particular to a current measurement sensor system which can effectively solve the problem of poor anti-interference performance in the traditional method.
Description
Technical Field
The invention relates to the field of current sensors, in particular to a current measurement method and a sensor system.
Background
The hall effect defines the relationship between a magnetic field and an induced voltage, and when a current is passed through a conductor in the magnetic field, the magnetic field generates a force on electrons in the conductor perpendicular to the direction of electron movement, thereby generating a potential difference in two directions perpendicular to the conductor and the magnetic induction line. The magnetic sensor can be used for monitoring and measuring various parameters such as position, displacement, angle, angular velocity, rotating speed and the like by detecting magnetic field changes, converting the magnetic field changes into electric signal outputs, and can be used for carrying out secondary transformation on the variables to measure pressure, quality, liquid level, flow rate and the like. Meanwhile, the output quantity of the magnetic sensor is directly connected with the electric control unit, so that automatic detection can be realized.
The core structure of the conventional current detection integrated circuit is shown in fig. 1, 11 is a transmission conductor of the current IT to be detected, and the current passing through the conductor according to maxwell magnetic field theory can generate vortex magnetic force lines, and the magnetic force lines are shown as B. The magnetic sensor 10 senses magnetic force lines and generates an electric signal, which is amplified by the amplifier 12 and output to a next stage circuit for processing. The conventional structure is simple but has the problem of poor anti-interference performance, and particularly when a charged wire (generating an induced magnetic field) or a permanent magnet appears near a detection circuit, the magnetic sensor cannot distinguish the current I to be detected T The induced magnetic field and interference generatedA magnetic field.
Disclosure of Invention
In order to solve the above problems, the present invention provides a current measurement method and a sensor system, which can effectively solve the problem of poor anti-interference performance in the conventional method.
The technical scheme is as follows: a current measurement method is characterized in that a conductor is led with a current I to be measured T For the lower layer, a silicon wafer piece with four magnetic sensors is placed above a conductor to form an upper layer, two symmetrical U-shaped grooves are formed in front of the conductor, a first magnetic sensor is placed at the position which is vertically mapped to the upper layer in an opening of the U-shaped groove, a second magnetic sensor is placed at the position which is vertically mapped to the upper layer in an opening of the U-shaped groove, a third magnetic sensor and a fourth magnetic sensor are placed between the first magnetic sensor and the second magnetic sensor and are positioned at the position which is vertically mapped to the upper layer above the conductor, B is set as magnetic flux to be processed T For the current I to be measured in the magnetic flux B to be treated T Through the conductor generating part, B N External sources of interference I in the magnetic flux B to be treated N The generation part is used for calculating the magnetic flux B to be processed through an algorithm and attenuating an interference signal caused by a magnetic field generated by an external interference source, and obtaining the current I to be detected according to the magnetic flux B to be processed T Is of a size of (a) and (b).
It is further characterized in that,
the derivation formula for calculating the magnetic flux B to be processed is as follows: current I to be measured T For the magnetic flux of four magnetic sensors, B is used respectively Ta 、B Tb 、B Tc 、B Td B for indicating the magnetic flux of the interference source to the magnetic sensor Na 、B Nb 、B Nc 、B Nd The total magnetic flux of the four magnetic sensors is shown as B a 、B b 、B c 、B d Represented, then b=b a +B b -(B c +B d )
＝(B Ta +B Na )+(B Tb +B Nb )–(B Tc +B Nc )–(B Td +B Nd )
≈B Ta +B Na +B Nb -B Nc -B Nd (B Tc 、B Td Far less than other components
＝B Ta +B Tb +(B Na +B Nb -B Nc -B Nd )
＝B T +B N 。
A sensor system for current measurement, comprising a conductor with a U-shaped groove at a lower layer and a silicon wafer with four magnetic sensors at an upper layer, wherein two symmetrical U-shaped grooves are arranged in front of the conductor, a first magnetic sensor is arranged at a position vertically mapped to the upper layer in an opening of the U-shaped groove, a second magnetic sensor is arranged at a position vertically mapped to the upper layer in an opening of the U-shaped groove, and a third magnetic sensor and a fourth magnetic sensor are arranged between the first magnetic sensor and the second magnetic sensor and are arranged at positions vertically mapped to the upper layer above the conductor.
After the system and the method are adopted, the four magnetic sensors sense the current I to be measured simultaneously T The magnetic field is calculated and effectively eliminates external interference, so that the efficiency is improved, the signal-to-noise ratio is increased, and the anti-interference capability is improved.
Drawings
FIG. 1 is a schematic diagram of the prior art;
FIG. 2 is a schematic diagram of the present invention;
FIG. 3 is a left side view of FIG. 2;
FIG. 4 is a graph of conductor magnetic field patterns;
fig. 5 is a graph of normalization processing.
Detailed Description
See fig. 2 to 5: a current sensing system for current detection has a system structure divided into two layers, as shown in FIG. 3, a lower layer comprising a conductor 11 and a second layer being a silicon wafer 20 with four magnetic sensors. Two symmetrical U-shaped grooves are formed in front of the conductor 11, a strip-shaped groove can be formed in the rear of the conductor or the conductor can be formed in the rear of the conductor, a first magnetic sensor is placed at a position which is vertically mapped to the upper layer in an opening of the U-shaped groove, a second magnetic sensor is placed at a position which is vertically mapped to the upper layer in an opening of the U-shaped groove, and a third magnetic sensor and a fourth magnetic sensor are placed between the first magnetic sensor and the second magnetic sensor and are located at positions which are vertically mapped to the upper layer above the conductor. The measurement method is as follows:
current I to be measured T Through the conductor 11 of special shape, there are two U-shaped recesses on the conductor 11, there is a strip type recess two U-shaped recesses top also can need not the strip type recess, and the main function of U-shaped recess is the intensity of magnetic field in the strengthening U type inslot, and the main purpose of strip type recess is to make the electric current flow down to strip type recess as far as possible, is favorable to strengthening the magnetic field of U-shaped recess. Four magnetic sensors are arranged right above the conductor 11, and the first magnetic sensor 10a and the second magnetic sensor 10b are mainly used for inducing the current I to be measured T A magnetic field generated; the third magnetic sensor 10c and the fourth magnetic sensor 10d are positioned at a point below the strip-shaped groove, the four magnetic sensors are on the same plane, and the third magnetic sensor 10c and the fourth magnetic sensor 10d are mainly used for eliminating external interference. According to the algorithm described by the invention, an interference magnetic field formed by an interference current source in any direction outside the chip can be effectively attenuated, but the attenuation effect is different. Taking the case where the attenuation effect is the worst as an example (refer to the position of the interference source in fig. 2): external magnetic field interference can use live wire I N Instead, the interference source 12 is perpendicular to the magnetic sensor horizontal line, interference source I N When flowing through the external conductor 12, an interfering magnetic field B' is generated.
When the current I to be measured T The magnetic field generated when flowing through the conductor 11 is shown in fig. 4. The magnetic field strength of the conductor 11 is represented by a gray signal, and the darker the gray, the stronger the magnetic field. The magnetic field near the U-shaped groove of the conductor 11 is strongest, while the magnetic field below the winding-up groove of the conductor is weak, and the magnetic fluxes induced by the third magnetic sensor 10c and the fourth magnetic sensor 10d can be very small relative to the first magnetic sensor 10a and the second magnetic sensor 10b, and can be regarded as zero. Current I to be measured T B for magnetic flux of magnetic sensor Ta 、B Tb 、B Tc 、B Td And (3) representing. Interference current source I N B for magnetic flux of magnetic sensor Na 、B Nb 、B Nc 、B Nd And (3) representing. Total magnetic flux usage B of four magnetic sensors a 、B b 、B c 、B d The distance between the first magnetic sensor 10a and the second magnetic sensor 10b is L ab The distance between the third magnetic sensor 10c and the fourth magnetic sensor 10d is L cd The distance L between the interference source conductor 13 and the nearest magnetic sensor 1 And (3) representing. The magnetic flux B to be processed is calculated by the formula:
B＝B a +B b -(B c +B d )
＝(B Ta +B Na )+(B Tb +B Nb )–(B Tc +B Nc )–(B Td +B Nd )
＝B Ta +B Na +B Tb +B Nb -B Nc -B Nd (B Tc 、B Td far less than other components
＝(B Ta +B Tb )+(B Na +B Nb -B Nc -B Nd )
＝B T +B N (B T And B is connected with N Respectively is I T 、I N Influence on the magnetic sensor
The induced electric signal generated by the magnetic flux B to be processed can be processed by a post-stage circuit to monitor the current I to be detected in real time T 。B a 、B b 、B c 、B d Intensity and L ab 、L cd In the related, the magnitude of the magnetic flux of the induced magnetic field generated by the energized conductor is inversely proportional to the distance, B N The method comprises the following steps:
because the structure of algorithm declaration is packaged in the chip, in practical application L 1 Far greater than L ab Consider now the more extreme case L 1 ＝L ab The interference is stronger at this time.
Calculation by normalization，B N And L is equal to ab 、L cd The relationship approximates FIG. 5, and it can be seen from FIG. 5 that as L cd Monotonically decreasing in increasing function, that is to say L cd The larger B N The smaller the signal-to-noise ratio number of the system is, the better. When B is N When small enough, the magnetic flux B is substantially only B T Influence, B T And the current I to be measured T Proportional to the ratio. The magnetic flux to be processed can generate an electric signal on the magnetic sensor, and the current I to be detected can be obtained by collecting the electric signal T Is a function of the magnitude of (a).
The system uses a special structure formed by a special-shaped conductor and a plurality of magnetic sensors, and the influence of external magnetic interference on a current signal to be detected is effectively attenuated by operating the induction signals of the plurality of magnetic sensors, so that the signal-to-noise ratio of the system is improved, and the system has great practical value in the design of integrated circuits.
Claims (1)
1. A current measurement method is characterized in that a conductor is led with a current I to be measured T For the lower layer, a silicon wafer piece with four magnetic sensors is placed above a conductor to form an upper layer, two symmetrical U-shaped grooves are formed in front of the conductor, a first magnetic sensor is placed in one U-shaped groove opening and is vertically mapped to the position of the upper layer, a second magnetic sensor is placed in the other U-shaped groove opening and is vertically mapped to the position of the upper layer, a third magnetic sensor and a fourth magnetic sensor are placed between the first magnetic sensor and the second magnetic sensor and are positioned above the conductor and are vertically mapped to the position of the upper layer, B is set as magnetic flux to be processed T For the current I to be measured in the magnetic flux B to be treated T Through the conductor generating part, B N External sources of interference I in the magnetic flux B to be treated N The generation part is used for calculating the magnetic flux B to be processed through an algorithm and attenuating an interference signal caused by a magnetic field generated by an external interference source, and obtaining the current I to be detected according to the magnetic flux B to be processed T Is of a size of (2); the derivation formula for calculating the magnetic flux B to be processed is as follows: current I to be measured T For the magnetic flux of four magnetic sensors, B is used respectively Ta 、B Tb 、B Tc 、B Td B for indicating the magnetic flux of the interference source to the magnetic sensor Na 、B Nb 、B Nc 、B Nd The total magnetic flux of the four magnetic sensors is shown as B a 、B b 、B c 、B d Representation, then
B＝B a +B b -(B c +B d )
＝(B Ta +B Na )+(B Tb +B Nb )–(B Tc +B Nc )–(B Td +B Nd )
≈B Ta +B Tb +B Na +B Nb -B Nc -B Nd (B Tc 、B Td Far less than other components
＝B Ta +B Tb +(B Na +B Nb -B Nc -B Nd )
＝B T +B N 。
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102162819A (en) * | 2010-02-12 | 2011-08-24 | 阿尔卑斯绿色器件株式会社 | Current measuring device |
| CN102830265A (en) * | 2012-09-04 | 2012-12-19 | 上海舜宇海逸光电技术有限公司 | Current measurement device |
| CN105021864A (en) * | 2014-04-25 | 2015-11-04 | 英飞凌科技股份有限公司 | Magnetic field current sensors, sensor systems and methods |
| CN207036928U (en) * | 2017-03-24 | 2018-02-23 | 无锡思泰迪半导体有限公司 | A kind of sensing system of current measurement |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102162819A (en) * | 2010-02-12 | 2011-08-24 | 阿尔卑斯绿色器件株式会社 | Current measuring device |
| CN102830265A (en) * | 2012-09-04 | 2012-12-19 | 上海舜宇海逸光电技术有限公司 | Current measurement device |
| CN105021864A (en) * | 2014-04-25 | 2015-11-04 | 英飞凌科技股份有限公司 | Magnetic field current sensors, sensor systems and methods |
| CN207036928U (en) * | 2017-03-24 | 2018-02-23 | 无锡思泰迪半导体有限公司 | A kind of sensing system of current measurement |
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