CN106941325A - One kind improves carborundum H bridge inverters stability with dropping low-loss method - Google Patents
One kind improves carborundum H bridge inverters stability with dropping low-loss method Download PDFInfo
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- CN106941325A CN106941325A CN201710135294.2A CN201710135294A CN106941325A CN 106941325 A CN106941325 A CN 106941325A CN 201710135294 A CN201710135294 A CN 201710135294A CN 106941325 A CN106941325 A CN 106941325A
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- Prior art keywords
- stability
- mosfet
- ferrite bean
- loss
- phase
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0064—Magnetic structures combining different functions, e.g. storage, filtering or transformation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
Add ferrite bean to improve the stability of a system and drop low-loss method in the single-phase H bridge inverters of SiC MOSFET the invention discloses one kind, including：The riding position system of selection of ferrite bean；The number choosing method of ferrite bean.The single-phase H-bridge circuits of SiC MOSFET include：Dc source, DC side filter capacitor, drive signal generation circuit, switch mosfet pipe, ferrite bean, load inductance.Because the unreliable and system parasitic parametric interaction of control panel output signal can make system produce vibration, using magnetic bead very high resistivity and magnetic conductivity, the principle that high frequency electric is distributed with form of heat wherein can effectively suppress vibration.By present invention inhibits unreliable, the wild effect occurred during speed-sensitive switch of the influence due to system parasitic parameter and control panel output signal, obtaining the stability of a system and the preferable balance of loss.
Description
Technical field:
The present invention relates to field of power electronics, more particularly to ferrite bean improves stability in single-phase H bridge inverters
With dropping low-loss method.
Background technology:
At present, the main flow of power electronic devices is the devices such as MOSFET, IGBT and IGCT based on silicon materials, by 60
Development for many years, silicon-based devices have been achieved for significant progress, and Step wise approximation is determined its performance by physical characteristics of materials
Theoretical limit.And SiC MOSFET because switching speed, pressure voltage, conducting resistance, capability of resistance to radiation, heat-resisting ability,
The outstanding performance acquisition extensive concern in terms of system loss is reduced, is the key technology core that China's development new energy is urgently solved
The heart, to meet the requirement of energy-saving and emission-reduction and the development of new-energy grid-connected technology to the Performance And Reliability of power electronic devices.SiC
MOSFET is very sensitive to parasitic parameter as a high speed device, and high-voltage variable rate and current changing rate easily cause string
Disturb it is unstable with system, so influence of the research parasitic parameter to device performance is very necessary.
System parasitic parameter and the unreliable of control panel output signal can be such that SiC MOSFET are produced not in opening process
Stabilization.Modern technologies method is relied primarily on makes system stable by increasing the method for driving resistance, but this method is real
Existing system steady potential must increase the switching loss of system, therefore solve this problem and be particularly important --- improve single-phase H
The stability of bridge inverter is lost with reduction.
The content of the invention:
The purpose of the present invention is exactly to solve the above problems, it is proposed that a kind of ferrite bean is in single-phase H-bridge circuit
Stability is improved with dropping low-loss method.
To achieve these goals, the present invention is adopted the following technical scheme that：
1. ferrite bean is added in a kind of single-phase H bridge inverters of SiC MOSFET improves stability with dropping low-loss side
Method, it is characterised in that the raising stability includes with dropping low-loss method：
The optimal riding position of ferrite bean is chosen, the stability and loss for making radio frequency system are optimized；
It is determined that improving radio frequency system stability and dropping the optimal number of low-loss ferrite bean.
A kind of ferrite bean of the single-phase H bridge inverters of SiC MOSFET is determined 2. in one embodiment, further including
The step of optimal riding position.
3. a kind of ferrite bean improves stability with dropping low-loss method, it is adaptable to a kind of single-phase H of SiC MOSFET
Bridge inverter.The circuit, it is characterised in that including：Direct voltage source, DC side filter capacitor, the first magnetic bead, the second magnetic bead,
3rd magnetic bead, the 4th magnetic bead, the first MOSFET, the 2nd MOSFET, the 3rd MOSFET, the 4th MOSFET, load inductance.
Direct voltage source positive pole passes through the first ferrite bean upper end, the first MOSFET drain electrode, the second ferrite bean
Upper end, the 2nd MOSFET drain electrodes, are then attached to direct voltage source negative pole.Direct voltage source positive pole passes through the 3rd ferrite bean
Upper end, the 3rd MOSFET drain electrode, the 4th ferrite bean upper end, the 4th MOSFET drain electrode filter, are then attached to direct current
Potential source negative pole.One end of load inductance is connected between the first MOSFET source electrode and the upper end of the second ferrite bean, another
End is connected between the 3rd MOSFET source electrode and the upper end of the 4th ferrite bean.The signal that drive circuit is produced is connected respectively
First MOSFET, the 2nd MOSFET, the 3rd MOSFET and the 4th MOSFET grid.
The beneficial effects of the invention are as follows：
Suitable position adds a certain size ferrite bean and coordinates itself and driving resistance in major loop, can be with
Do not slow down open speed in the case of make that system is stable not to produce oscillatory occurences, and switching loss significantly reduces, and realizes
The balance of the stability of a system and switching speed.
Below in conjunction with the drawings and specific embodiments, the present invention will be described in detail, but not as a limitation of the invention.
Brief description of the drawings：
Fig. 1 is the SPWM control signal waveforms of the single-phase H bridge inverters of SiC MOSFET of the present invention；
Fig. 2 is that the present invention improves the stability of a system and drops the devices switch process that low-loss method is applied to high-frequency circuit
Current direction；
Fig. 3 is the impedance operator of ferrite bean of the present invention；
Fig. 4 is the position that ferrite bean of the present invention is laid in embodiment；
Fig. 5 is the drive signal waveform contrast that ferrite bean of the present invention is sealed in embodiment before and after magnetic bead.
Fig. 6 is specific riding position of the ferrite bean of the present invention in the single-phase H bridge inverters systems of SiC MOSFET.
Wherein reference
UdMain circuit direct current power source voltage, C1DC bus capacitor；
LdcBus inductance, L inductive loads；
M1、M2、M3、M4SiC MOSFET。
Specific implementation method：
Describe the embodiment of the present invention in detail below in conjunction with accompanying drawing.Identical symbology has identical or class
Like the component or device of function.
Referring to Fig. 1, being the SPWM control signal waveforms of the single-phase H bridge inverters of SiC MOSFET of the present invention.It is by frequency
fcTriangle carrier signal ucDirectly with fundamental frequency sine wave modulated signal usIt is compared, it is possible to generate four tunnel control signals, it is raw
Into control signal amplify through drive circuit after, the grid of four switching devices of single-phase H bridge inverters is added in respectively so that
Turning on and off for main circuit switch device can just be controlled.Wherein signal uGS1With signal uGS2Complementation, to drive same half
The switching tube of bridge：First MOSFET and the 2nd MOSFET；Synchronous signal uGS3And uGS4Also it is complementary, two to drive another half-bridge
Individual switching tube：3rd MOSFET and the 4th MOSFET；And signal uGS1And uGS4、uGS2And uGS3Also it is identical two-by-two.Work as modulating wave
During more than triangular carrier, output drive signal is positive pulse, i.e. high level；When modulating wave is less than triangular carrier, output driving
Signal is negative pulse, i.e. low level, now obtains the output voltage waveforms of single-phase full-bridge inverter as shown in figure 1, u in figureoFor
Full-bridge output voltage (without wave filter), voltage magnitude is DC side busbar voltage Ud。
Referring to Fig. 2, being that the present invention improves the stability of a system and drops low-loss method suitable for the single-phase H of SiC MOSFET
The current direction of bridge inverter switching process.Because the effect of first, fourth magnetic bead is identical with the effect of second and third magnetic bead, now only
It is introduced by taking the placement of first, fourth magnetic bead as an example.When the first MOSFET and the 4th MOSFET are turned on, now output voltage Uo
For high level, and amplitude is DC bus-bar voltage Ud, load current ioFlow direction such as Fig. 2 (a) shown in.
When the first MOSFET and the 4th MOSFET are turned off, and the 2nd MOSFET and the 3rd MOSFET when not opening completely
(this time includes opening for the 2nd MOSFET and the 3rd MOSFET and postponed and Dead Time), the electricity in being loaded due to resistance sense
Flow ioIt can not be mutated, so load current ioBy the 2nd MOSFET and the 3rd MOSFET body diode afterflow, electricity is now loaded
Stream flow direction is as shown in Fig. 2 (b).
When the first MOSFET and the 4th MOSFET shut-offs, when the 2nd MOSFET and the 3rd MOSFET are opened, and upper one
Individual on off state terminates, load current ioStill be on the occasion of when, in loop the flow direction of electric current by power supply through bus inductance and second
MOSFET and the 3rd MOSFET.By didc/dt≈iL/tonUnderstand, open that speed is faster or load current is bigger, curent change
Rate is bigger.Vertiginous electric current on serious EMI problems, bus can be produced when rate of change is excessive can cause larger common mode
Voltage and electric current, can make the drive signal of switching tube complementary on same bridge arm produce the higher-order of oscillation, and common-mode voltage is logical
Overdrive chip and opto-coupler chip is coupled to control panel.Because the switch that control panel sends drive signal can be produced in opening process
Mechanical oscillation is given birth to, now common-mode signal influences each other with mechanical oscillation, and the drive waveforms for causing control panel to send are unreliable, entirely
System just starts vibration, it is impossible to normal work.Certainly, same situation also occurs when load current is negative value.
Referring to Fig. 3, being the impedance operator of the ferrite bean selected by the present invention.The magnetic bead is high current ferrite magnetic
Pearl, magnetic bead design 3.5 Ω/100MHz, magnetic bead impedance operator is non-linear, and frequency is higher, and resistance is bigger.
Referring to Fig. 4, being the position that ferrite bean of the present invention is laid in embodiment.In the 2nd MOSFET and the 3rd
In MOSFET opening processes, ferrite bean is placed in same bridge arm by high frequency oscillation circuit as shown in red solid line in figure
Complementary switch pipe can be with the drain electrode end of the effective damping higher-order of oscillation, i.e. the first MOSFET drain electrode end and the 4th MOSFET.Should
High current magnetic bead magnetic saturation risk is minimum, can preferably damp the higher-order of oscillation.
Referring to Fig. 5, being the drive signal waveform contrast that ferrite bean of the present invention is sealed in embodiment before and after magnetic bead.
In high frequency it is increased suppress noise ability in some cases it is not anticipated that it is good, at this time need carry out connection in series-parallel magnetic bead
With the inhibition being optimal.Magnetic bead is sealed in P position, under certain DC voltage, by the way that magnetic bead connection in series-parallel is caused
Untill no longer the higher-order of oscillation occurs for the drive signal waveform of the switching tube in Fig. 5, the magnetic bead impedance now sealed in is optimum value, from
And the stabilization and the balance of loss of whole system are ensure that in the case where not increasing raster data model resistance.
In embodiments of the invention, because the addition of ferrite bean, open stable in guarantee and shut-off vibration is less
In the case of total losses about have dropped 24%.Realize the balance of stability and switching loss.
Certainly, the present invention can also have other various embodiments, ripe in the case of without departing substantially from spirit of the invention and its essence
Corresponding change and waveform can be made according to the present invention by knowing those skilled in the art, but these corresponding changes and deformation all should
Belong to scope of the claims of the present invention.
Claims (3)
1. one kind improves the single-phase H bridge inverters stability of SiC MOSFET with dropping low-loss method, it is characterised in that the raising
Stability includes with dropping low-loss method：
The optimal riding position of ferrite bean is chosen, radio frequency system stability and loss is optimized；
Choose the optimal number for improving radio frequency system stability and dropping low-loss ferrite bean.
2. the optimal riding position of ferrite bean as claimed in claim 1, it is characterised in that including：Press close to SiC
MOSFET drain electrode ends.
3. the single-phase H bridge inverters stability of SiC MOSFET is improved as claimed in claim 1 and drops low-loss ferrite magnetic
The optimal number of pearl, it is characterised in that under certain DC voltage, the drive waveforms of switching tube do not have the higher-order of oscillation, that is, are
System circuit ferrite bean number resulting when reaching stable is optimal solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710135294.2A CN106941325A (en) | 2017-03-08 | 2017-03-08 | One kind improves carborundum H bridge inverters stability with dropping low-loss method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710135294.2A CN106941325A (en) | 2017-03-08 | 2017-03-08 | One kind improves carborundum H bridge inverters stability with dropping low-loss method |
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| CN106941325A true CN106941325A (en) | 2017-07-11 |
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| CN201710135294.2A Pending CN106941325A (en) | 2017-03-08 | 2017-03-08 | One kind improves carborundum H bridge inverters stability with dropping low-loss method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111313733A (en) * | 2020-04-01 | 2020-06-19 | 南通大学 | Low-parasitic-oscillation two-level SiC MOSFET H-bridge main circuit topology |
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| JPH04355675A (en) * | 1991-05-31 | 1992-12-09 | Matsushita Electric Works Ltd | Inverter |
| CN103312212A (en) * | 2012-03-16 | 2013-09-18 | 上海利思电气有限公司 | Photovoltaic inverter |
| CN103475253A (en) * | 2013-09-06 | 2013-12-25 | 西安电子科技大学 | Single-phase inverter |
| CN103607007A (en) * | 2013-11-18 | 2014-02-26 | 奇瑞汽车股份有限公司 | Wireless charging emission circuit |
| CN103619089A (en) * | 2013-09-11 | 2014-03-05 | 杭州电子科技大学 | EMI inhibiting method of LED driving power supply |
| CN203522544U (en) * | 2013-11-01 | 2014-04-02 | 广州市爱浦电子科技有限公司 | Low-noise self-excited push-pull converter |
| CN204559381U (en) * | 2015-03-30 | 2015-08-12 | 广东美的制冷设备有限公司 | There are the filter circuit of electromagnetic interference inhibit feature, Switching Power Supply and household electrical appliance |
| CN105141162A (en) * | 2015-10-22 | 2015-12-09 | 保定四方三伊电气有限公司 | Series resonant inverter based on silicon carbide MOSFETs |
| US20160006428A1 (en) * | 2014-07-03 | 2016-01-07 | Transphorm Inc. | Switching circuits having ferrite beads |
| CN205792291U (en) * | 2016-05-31 | 2016-12-07 | 华北电力大学（保定） | A kind of non-isolated photovoltaic grid-connected inverter |
-
2017
- 2017-03-08 CN CN201710135294.2A patent/CN106941325A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04355675A (en) * | 1991-05-31 | 1992-12-09 | Matsushita Electric Works Ltd | Inverter |
| CN103312212A (en) * | 2012-03-16 | 2013-09-18 | 上海利思电气有限公司 | Photovoltaic inverter |
| CN103475253A (en) * | 2013-09-06 | 2013-12-25 | 西安电子科技大学 | Single-phase inverter |
| CN103619089A (en) * | 2013-09-11 | 2014-03-05 | 杭州电子科技大学 | EMI inhibiting method of LED driving power supply |
| CN203522544U (en) * | 2013-11-01 | 2014-04-02 | 广州市爱浦电子科技有限公司 | Low-noise self-excited push-pull converter |
| CN103607007A (en) * | 2013-11-18 | 2014-02-26 | 奇瑞汽车股份有限公司 | Wireless charging emission circuit |
| US20160006428A1 (en) * | 2014-07-03 | 2016-01-07 | Transphorm Inc. | Switching circuits having ferrite beads |
| CN204559381U (en) * | 2015-03-30 | 2015-08-12 | 广东美的制冷设备有限公司 | There are the filter circuit of electromagnetic interference inhibit feature, Switching Power Supply and household electrical appliance |
| CN105141162A (en) * | 2015-10-22 | 2015-12-09 | 保定四方三伊电气有限公司 | Series resonant inverter based on silicon carbide MOSFETs |
| CN205792291U (en) * | 2016-05-31 | 2016-12-07 | 华北电力大学（保定） | A kind of non-isolated photovoltaic grid-connected inverter |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111313733A (en) * | 2020-04-01 | 2020-06-19 | 南通大学 | Low-parasitic-oscillation two-level SiC MOSFET H-bridge main circuit topology |
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