CN106940503A - Display device - Google Patents
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- CN106940503A CN106940503A CN201710004406.0A CN201710004406A CN106940503A CN 106940503 A CN106940503 A CN 106940503A CN 201710004406 A CN201710004406 A CN 201710004406A CN 106940503 A CN106940503 A CN 106940503A
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- integration value
- luminance integration
- display device
- semiconductor layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
Abstract
The present invention provides a kind of display device, including：One substrate；Semi-conductor layer, on substrate；One the second electrode lay, positioned at semiconductor layer, and includes the first data wire extended along a second direction；And multiple pixel regions, between two adjacent first data wires；Wherein, in having one first section and one second section in a pixel region therein, substantial parallel second direction respectively, and the first section is overlapping with semiconductor layer and the second section is not overlapping with semiconductor layer；Wherein, when a light is by display device, the first section of measurement can obtain one first luminance integration value, and the second section of measurement can obtain one second luminance integration value, and the first luminance integration value is more than 0.4 and less than 1 with the ratio of the second luminance integration value.
Description
Technical field
The present invention is on a kind of display device, espespecially a kind of display device for lifting penetrance or contrast.
Background technology
As display technology constantly improves, all display panels are sent out towards the trend such as small volume, thickness of thin, lightweight
Exhibition, therefore the display equipment of main flow develops into thin display, such as liquid crystal by conventional cathode-ray tube on the market at present
Show panel, organic LED display panel or inorganic light-emitting diode display panel etc..Wherein, thin display can be applied
Field it is quite a lot of, the mobile phone that is used such as in daily life, notebook computer, video camera, camera, music player, OK
The display panels such as dynamic guider, TV, it is most of to use those display panels.
Wherein, the technology of liquid crystal display panel is even more quite ripe, and is one of display panel common on the market；So
And, as display panel is continued to develop, display quality requirement of the consumer to display panel is improved increasingly, therefore Ge Jia manufacturers are invariably
Strongly develop the display panel with more high display quality.
In the evolution of liquid crystal display panel, with the arriving of high-resolution display panel generation, panel is penetrated
Rate and contrast are one of key factor of display quality of relation display panel.Therefore, Ge Jia manufacturers actively improve aobvious invariably
Show the penetrance and contrast of panel, and its display quality can be lifted.
In view of this, a kind of display device of development is needed badly at present, it can lift penetrance or contrast, it is right at present to meet
In the requirement of high display quality.
The content of the invention
The main object of the present invention is adjusted in a kind of display device of offer, the light transmittance in wherein active layers region,
To lift the penetrance or contrast of display device, and lift the display quality of display device.
Include in the display device of a wherein embodiment of the invention：One substrate；Semi-conductor layer, on the substrate；
One first insulating barrier, on the semiconductor layer；One first electrode layer, on first insulating barrier, the first electrode layer bag
Containing the multiple first grid polar curves extended along a first direction；One second insulating barrier, in the first electrode layer；One second electrode
Layer, on second insulating barrier, the second electrode lay includes multiple first data wires extended along a second direction, and this first
Direction is different from the second direction；Multiple pixel regions, are defined by by those first grid polar curves and those first data wires
Region；Wherein, in defining one first dummy line and one second dummy line in a pixel region therein, first dummy line and
Second dummy line distinguishes the substantial parallel second direction；Wherein, defining first dummy line has and the semiconductor layer weight
One first folded section, and second dummy line is defined with not having one second overlapping section with the semiconductor layer, this first
Section has a same distance with the first grid polar curve respectively with second section, and the length of first section is equal to second section
Length；Wherein, when a light passes through the display device, first section, one first section brightness of correspondence, second section pair
One second section brightness is answered, the first section brightness has one first luminance integration value, the second section brightness has one second
Luminance integration value, the first luminance integration value is more than 0.4 and less than 1 with the ratio of the second luminance integration value.
The display device of another embodiment of the present invention includes：One substrate；Semi-conductor layer, on the substrate；One
First insulating barrier, on the semiconductor layer；One first electrode layer, on first insulating barrier, the first electrode layer is included
The multiple first grid polar curves extended along a first direction；One second insulating barrier, in the first electrode layer；One second electrode
Layer, on second insulating barrier, the second electrode lay includes multiple first data wires extended along a second direction, and this first
Direction is different from the second direction；And multiple pixel regions, determined by by those first grid polar curves and those first data wires
The region that justice goes out；Wherein, defining has one first section and one second section in a pixel region therein, first section is real
Parallel second direction and overlapping with the semiconductor layer in matter, and the substantial parallel second direction of second section and with this half
Conductor layer does not have overlapping, and first section has a same distance with the first grid polar curve respectively with second section, firstth area
The length of section is equal to the length of second section；Wherein, when a light passes through the display device, first section correspondence one first
Section brightness, second section, one second section brightness of correspondence, the first section brightness has one first luminance integration value, and this
Two section brightness have one second luminance integration value, and the ratio of the first luminance integration value and the second luminance integration value is more than
0.4 and less than 1.
The display device of a further embodiment of the present invention includes：One substrate；One shielding pattern layer, on the substrate；
Semi-conductor layer, in the shielding pattern layer, and the semiconductor layer partly overlaps with the shielding pattern layer；One first insulation
Layer, on the semiconductor layer；One first electrode layer, on first insulating barrier, the first electrode layer is included along one first
Multiple first grid polar curves of direction extension；One second insulating barrier, in the first electrode layer；One the second electrode lay, positioned at this
On second insulating barrier, the second electrode lay includes multiple first data wires extended along a second direction, and the first direction is different
In the second direction；Multiple pixel regions, are the region defined by those first grid polar curves and those first data wires；Its
In, in one first dummy line of definition and one second dummy line in a pixel region therein, first dummy line and second void
Intend line and distinguish the substantial parallel second direction；Wherein, define first dummy line have with the semiconductor layer it is overlapping and not with
One first overlapping section of the shielding pattern layer, and define second dummy line have with the semiconductor layer do not have it is overlapping and not with
One second overlapping section of the shielding pattern layer, first section and second section have one identical with the first grid polar curve respectively
Distance, the length of first section is equal to the length of second section；Wherein, when a light is by the display device, this first
Section one first section brightness of correspondence, second section, one second section brightness of correspondence, the first section brightness has one first
Luminance integration value, the second section brightness has one second luminance integration value, and the first luminance integration value is accumulated with second brightness
The ratio of score value is more than 0.4 and less than 1.
The display device of the more embodiment of the present invention includes：One substrate；One shielding pattern layer, on the substrate；
Semi-conductor layer, in the shielding pattern layer, and the semiconductor layer partly overlaps with the shielding pattern layer；One first insulation
Layer, on the semiconductor layer；One first electrode layer, on first insulating barrier, the first electrode layer is included along one first
Multiple first grid polar curves of direction extension；One second insulating barrier, in the first electrode layer；One the second electrode lay, positioned at this
On second insulating barrier, the second electrode lay includes multiple first data wires extended along a second direction, and the first direction is different
In the second direction；And multiple pixel regions, it is the area defined by those first grid polar curves and those first data wires
Domain；Wherein, defining has one first section and one second section in a pixel region therein, first section is substantial parallel
The second direction is simultaneously overlapping with the semiconductor layer and not overlapping with the shielding pattern layer, and second section it is substantial parallel this
Two directions are not simultaneously overlapping with the semiconductor layer and not overlapping with the shielding pattern layer, and first section is distinguished with second section
There is a same distance with the first grid polar curve, the length of first section is equal to the length of second section；Wherein, when a light
By the display device, first section, one first section brightness of correspondence, second section, one second section brightness of correspondence, this
One section brightness has one first luminance integration value, and the second section brightness has one second luminance integration value, first brightness
Integrated value is more than 0.4 and less than 1 with the ratio of the second luminance integration value.
In the display device of the present invention, first section overlapping with semiconductor layer has one first luminance integration value, and
The second not overlapping with semiconductor layer section has one second luminance integration value, is less than second by the first luminance integration value is made
Luminance integration value, particularly, the first luminance integration value are more than 0.4 and less than 1 with the ratio of the second luminance integration value, thus, can
In the range of the decline of tolerable contrast, penetrance is faced in lifting, and then lifts the display quality of display device.
Brief description of the drawings
Fig. 1 is the diagrammatic cross-section of the display device of one embodiment of the invention 1.
Fig. 2 is the top view of element on the substrate of the display device of one embodiment of the invention 1.
Fig. 3 is the top view of element on the substrate of the display device of one embodiment of the invention 1.
Fig. 4 is element on the substrate of the display device of one embodiment of the invention 1 and the black-matrix layer on offside substrate
Top view.
Fig. 5 is the top view of element on the substrate of the display device of one embodiment of the invention 2.
Fig. 6 is the top view of element on the substrate of the display device of one embodiment of the invention 2.
Fig. 7 is element on the substrate of the display device of one embodiment of the invention 2 and the black-matrix layer on offside substrate
Top view.
Fig. 8 is the top view of element on the substrate of the display device of one embodiment of the invention 3.
Fig. 9 is the top view of element on the substrate of the display device of one embodiment of the invention 3.
Figure 10 is element on the substrate of the display device of one embodiment of the invention 3 and the black-matrix layer on offside substrate
Top view.
Figure 11 is the brightness measurement result figure of test case 1.
Figure 12 is the brightness measurement result figure of test case 2.
Figure 13 A to 13C are respectively the brightness measurement result figure of test case 3.
Figure 14 A to 14C are respectively the brightness measurement result figure of test case 4.
Figure 15 A to 15C are respectively the brightness measurement result figure of test case 5.
First luminance integration value of Figure 16 test cases 3 to 5 is relatively schemed with the odds ratio of the second luminance integration value.
Figure 17 is the transparency and the graph of a relation of white point position of semiconductor layer in different colours pixel region.
Description of reference numerals：
The semiconductor layer of 1 substrate 11
The shading edge of 111,112 semiconductor layer edge 121
The first grid polar curve of 12 shielding pattern layer 13
The electronic pads of 141 first data wire 143
The slit of 15 pixel electrode 151
2 offside substrates 21 are open
The backlight module of 3 display layer 4
D1, D2, D3 are apart from P pixel regions
P1, P2, P1 ', P2 ' point the first sections of S1
S2 the second section X first directions
Y second directions
Embodiment
Illustrate embodiments of the present invention by particular specific embodiment below, those skilled in the art can be by this explanation
Content disclosed in book understands other advantages and effect of the present invention easily.The present invention also can be by other different specific realities
Apply example to be implemented or applied, the various details in this specification also can not depart from the present invention for different viewpoints and application
Spirit under carry out it is various modification with change.
Furthermore, word of the specification with the ordinal number used in claim such as " first ", " second ", with the power of modifying
Profit require element, itself and unexpectedly contain and represent the request element have it is any before ordinal number, a certain request is not represented yet
Element and the order in the order or manufacture method of another request element, the use of those ordinal numbers are only used for making have certain life
One request element of name is able to that with another request element with identical name clear differentiation can be made.
Embodiment 1
Fig. 1 is the diagrammatic cross-section of the display device of the present embodiment.Wherein, the display device of the present embodiment includes：One base
Plate 1；A pair of side base plates 2, are oppositely arranged with substrate 1；And a display layer 3, between offside substrate 2 and substrate 1；And one the back of the body
Optical module 4, is arranged at the lower section of substrate 1 of the display device.In the present embodiment, it is brilliant that substrate 1 can be provided with thin-film electro for top
The thin film transistor base plate of structure (not shown), and offside substrate 2 can be provided with chromatic filter layer (not shown) and black for top
The colored filter substrate of color matrix layer (not shown).However, in the other embodiment of the present invention, (figure is not for chromatic filter layer
Show) also it can be set on substrate 1, now, substrate 1 is then the thin film transistor base plate (color of an integral color filter array
Filter on array, COA)；Or black-matrix layer (not shown) also can be set on substrate 1, now, substrate 1 is then whole for one
Close the thin film transistor base plate (black matrx on array, BOA) of black matrix".In addition, the display device of the present embodiment
In display layer 3 be a liquid crystal layer.Next, will be described in the architectural feature of the set element of the top of substrate 1.
Fig. 2 is the top view of element on the substrate of the display device of the present embodiment.Refer to Fig. 1 and 2, the present embodiment it is aobvious
Show that equipment is included：One substrate 1；One shielding pattern layer 12, on substrate 1；Semi-conductor layer 11, positioned at shielding pattern layer 12
On, and semiconductor layer 11 partly overlaps with shielding pattern layer 12；One first insulating barrier (because being formed in the whole surface of substrate 1, and
There is no border in top view, therefore not shown), on semiconductor layer 11；One first electrode layer, positioned at the first insulating barrier (figure
Do not show) on, first electrode layer includes the multiple first grid polar curves 13 extended along a first direction X；One second insulating barrier is (because forming
In in the whole surface of substrate 1, and there is no border in top view, therefore not shown), in first electrode layer；One second electrode
Layer, in the second insulating barrier (not shown), the second electrode lay includes multiple first data wires extended along a second direction Y
141 and multiple electrodes pad 143, first direction X are different from second direction Y；And multiple pixel region P, it is by first grid polar curve
13 and first region that is defined of data wire 141.Wherein, semiconductor layer 11 has semi-conductor layer edge 111, light-shielding pattern
Layer 12 have a shading edge 121, and between semiconductor layer edge 111 and shading edge 121 can be between 2 μm to 10 μm apart from D1
Between.In addition, semiconductor layer 11, the first data wire 141 and first grid polar curve 13 constitute multiple film crystal pipe units, (figure is not
Show).
Here, made by its usable substrate material such as glass, plastics, flexible materials, film of substrate 1.Work as base
Plate 1 its as made by plastics, flexible materials or film, the display device of the present embodiment can be a bendable display device.Half
Conductor layer 11 can be low-temperature polysilicon silicon semiconductor layer.First insulating barrier and the second insulating barrier can be used as oxide, nitride or
The insulating layer materials such as nitrogen oxides make.Conductive material can be used in shielding pattern layer 12, first electrode layer and the second electrode lay, such as
Made by metal, alloy, metal oxide, metal oxynitride or other electrode materials.However, in other realities of the present invention
Apply in example, the material of aforementioned components is not limited to that.
Fig. 3 is another top view of element on the substrate of the display device of the present embodiment；Here, in order to clearly show that, with
The filling line of Fig. 2 similar elements is not depicted in Fig. 3.As seen in figures 2 and 3, in the display device of the present embodiment, each pixel
Region P is correspondingly arranged on a pixel electrode 15, and pixel electrode 15 is electrically connected with electronic pads 143；Wherein pixel electrode 15 has
There are multiple slits 151 and a pectinate texture is presented.Here, such as ITO, IZO or ITZO electrically conducting transparent can be used in pixel electrode 15
Made by electrode material；However, in the other embodiment of the present invention, the material of pixel electrode 15 is not limited to that.
As shown in figure 1, in the present embodiment, the top of offside substrate 2 is provided with chromatic filter layer (not shown) and black square
The colored filter substrate of battle array layer (not shown).After the substrate 1 and 2 pairs of groups of offside substrate of the present embodiment, black-matrix layer with
The relative configuration of the element of the top of substrate 1 is as shown in Figure 4.Fig. 4 is element and offside on the substrate of the display device of the present embodiment
The top view of black-matrix layer on substrate；Wherein, black-matrix layer has multiple openings 21, and each pixel region is corresponded to respectively
P, to appear pixel electrode 15.
Embodiment 2
Fig. 5 and 6 is the top view of element on the substrate of the display device of the present embodiment；And Fig. 7 is the display of the present embodiment
Element and the top view of the black-matrix layer on offside substrate on the substrate of equipment.Here, the figures of Fig. 5 to 7 respectively with embodiment 1
2 to 4 be identical view.
Fig. 5 of Fig. 2 of comparing embodiment 1 to 4 and the present embodiment to 7, the display device of the present embodiment and embodiment 1 and aobvious
Show that equipment is similar, except the bearing of trend (i.e. second direction Y) and first grid polar curve 13 of the first data wire 141 of embodiment 1
Bearing of trend (i.e. first direction X) is vertical, and the bearing of trend (i.e. second direction Y) of first data wire 141 of the present embodiment and
The bearing of trend (i.e. first direction X) of first grid polar curve 13 is simultaneously non-perpendicular.Particularly, in the present embodiment, as shown in fig. 6, the
Two direction Y are the length direction of the slit 151 of pixel electrode 15.
Embodiment 3
Fig. 8 and 9 is the top view of element on the substrate of the display device of the present embodiment；And Figure 10 is the display of the present embodiment
Element and the top view of the black-matrix layer on offside substrate on the substrate of equipment.Here, Fig. 8 to 10 respectively with embodiment 2
Fig. 5 to 7 is identical view.
Fig. 8 of Fig. 5 of comparing embodiment 2 to 7 and the present embodiment to 10, the display device of the present embodiment and embodiment 2 and
Display device is similar, except the display device of the present embodiment is not provided with the shielding pattern layer 12 (as shown in Figure 5) of embodiment 2.
In addition, in the present embodiment, as shown in figure 8, the minimum range D2 between semiconductor layer edge 111,112 can be between 2 μm to 10 μm
Between.
Test case 1
In this test case, tested with the display device of embodiment 1.Here, as shown in figure 4, in the feelings of full GTG
There is provided a light by display device under shape, and measure by any point in black-matrix layer opening 21 to the most edge of opening 21 in
Brightness on first direction X bearing of trends.Here, so-called " full GTG ", which refers to, can bestow a ceiling voltage so that pixel region P
The state of all light.
More specifically, as shown in figure 4, in defining point P1, point P1 ', point P2 and point P2 ' in pixel region P；Wherein, point
P1 and point P1 ' is located on the pixel electrode 15 in opening 21, and point P2 and point P2 ' is located at the edge of opening 21.However, point P1, point
P1 ', point P2 and point P2 ' position are simultaneously not particularly limited, only will point P1 to point P2 lines the first dummy line and point P1 ' to point
Second dummy line of P2 ' lines meets following situations.
Wherein, the first dummy line of point P1 to point P2 lines is located in pixel region P and substantial parallel second direction Y.
First dummy line of point P1 to point P2 lines has the one first section S1 overlapping with semiconductor layer 11.Point P1 ' extremely point P2 ' lines
The second dummy line be located in pixel region P and substantial parallel second direction Y.Second dummy line of point P1 ' extremely point P2 ' lines
With with semiconductor layer 11 without one second overlapping section S2.First section S1 and the second section S2 respectively with first grid polar curve
13 have a same distance D3, and the first section S1 length of the length equal to the second section S2.
In the present invention, the neighborhood pixels region P of first grid polar curve 13, first grid polar curve 13 can it is overlapping with pixel region P or
Person is not overlapping.Second section S2 is located between the data wire 141 of semiconductor layer 111 and first, or the numbers of the second section S2 and first
According to line 141 apart from can be between 1 μm -10 μm.
In the present invention, " the substantial parallel second direction Y " of first/second dummy line refers to first/second dummy line and the
Two direction Y are substantially parallel, or the angle between first/second dummy line and second direction Y is between 0 degree to ± 5 degree.
Here, measuring in the bright of extremely point P2 ' the second virtual online of the first dummy line and point P1 ' by point P1 to point P2
Degree.Wherein, second direction Y is the length direction of the slit 151 of pixel electrode 15；And the transparency of semiconductor layer 11 is 60%.
However, the transparency of semiconductor layer 11 is not limited to this.
Figure 11 is the brightness measurement result figure of this test case, and wherein transverse axis is respectively the first dummy line (point P1 to point P2
Line) and the second dummy line (point P1 ' to point P2 ' line) the relative position in apparatus measures, rather than actual range.More
Specifically, in the measurement process for obtaining Figure 11 results, point P1 to point P2 lines the first dummy line is divided into 60 deciles,
To measure by point P1 to point P2 gray-scale intensity；As for point P1 ' to point P2 ' lines the second dummy line measurement process with it is foregoing
It is identical, therefore will not be repeated here；Then, it will be done by point P1 to point P2 gray-scale intensity and by point P1 ' to point P2 ' gray-scale intensity
Integration, then obtain result as shown in figure 11, wherein, the region shown between two dotted lines parallel with the longitudinal axis, then to be as shown in Figure 4
The first section S1 and the second section S2.However, point P1, P2, P1 ' and P2 ' position be not limited to position shown in Fig. 4, can
As measuring instrument and means change, as long as the first section S1 and the second section S2 meet aforementioned definitions；For example, point P1 and
P1 ' can be located at the centre of opening 21, and point P2 and P2 ' can be located at the edge of opening 21；However, the present invention is not limited to this.
As Figure 11 result show, the first section S1 institutes of the first dummy line (point P1 extremely point P2 lines) shown in Fig. 4
The first luminance integration value, hence it is evident that less than the obtained by the second section S2 of the second dummy line (point P1 ' extremely point P2 ' line)
Two luminance integration values.In addition, when by the obtained by the first section S1 of the first dummy line in Figure 11 (point P1 extremely point P2 line)
One luminance integration value is represented with A1, and second obtained by the second section S2 of the second dummy line (point P1 ' to point P2 ' line) is bright
Degree integrated value is represented with A2, after being calculated through following formula (1)：
(A2-A1)/A2 ≈ 60% (1)
Can learn, formula (1) calculated result be 60%, with this test case display device in semiconductor layer 11 it is transparent
Spend 60% numerical value almost consistent.By the transparency of adjustment semiconductor layer 11, it can change the first section S1's and the second section S2
Luminance integration value relativeness.
Test case 2
In this test case, tested with the display device of embodiment 1, and in test chart 4 semiconductor layer 11 it is transparent
Spend and penetrance and contrast are faced by the whole pixel region under 0% to 100%；Wherein, neighbouring pixel region is
Homochromy pixel cell.In addition, when the transparency of semiconductor layer 11 is 0%, representing light can not be by semiconductor layer 11, and works as half
The transparency of conductor layer 11 is 100%, and representing light can be completely by semiconductor layer 11.Here, can be by adjustment semiconductor layer
The fabrication steps of 11 annealing lasers, adjustment uses the Energy distribution of laser beam, and then adjusts the crystalline arrangement of semiconductor layer 11
State, and obtain the semiconductor layer 11 with different transparencies.
The test result of this test case is as shown in figure 12, wherein, as transparency increases, although face penetrance increase,
But contrast also with decline.As shown in figure 4, the near zone of semiconductor layer 11 is more irregular because of liquid crystal arrangement, easily there is dark line
Situation occur；If therefore semiconductor layer 11 can cover the dark line in part, contrast can be lifted, but penetrate while sacrificing to face
Rate.Here, if the transparency of semiconductor layer 11 is between complete shading (transparency is 0%) and complete printing opacity, (transparency is
100%), can be in the range of the tolerable that contrast is reduced when between, penetrance is faced in lifting.Here, for example, contrast
The tolerable scope of reduction is 1%.
Therefore, shown by Figure 12 result, be while energy when the transparency of semiconductor layer 11 is more than 0% and is less than 60%
Take into account contrast and face the situation of penetrance.In addition, being shown by the result of test case 1, the calculated numerical value of (A2-A1)/A2
It is almost consistent with the numerical value of transparency 60% of semiconductor layer 11.Therefore, take into account contrast in order to reach simultaneously and face penetrance
Situation, display device of the invention must meet following formula (2)：
0 ＜ (A2-A1)/A2 ＜ 0.6 (2)
After conversion, following formula (3) can obtain：
0.4 ＜ A1/A2 ＜ 1 (3)
Shown by the result of formula (3), in order to reach the situation taken into account contrast and face penetrance simultaneously, of the invention is aobvious
0.4 need to be more than and less than 1 by showing equipment the first luminance integration value A1 and the second luminance integration value A2 ratio (A1/A2)；Citing and
Speech, the first luminance integration value A1 and the second luminance integration value A2 ratio (A1/A2) are more than 0.6 and less than 0.8.
Test case 3
Figure 13 A to 13C are respectively the brightness measurement result figure of this test case, and it is respectively with the display device of embodiment 1
Red, green and blue pixel area measurement result figure, wherein the semiconductor layer of red, green and blue pixel area is saturating
Lightness respectively may be about 29%, 30% and 26%, and neighbouring pixel region is homochromy pixel cell.The test of this test case
Mode is identical with test case 1.In Figure 13 A into 13C, transverse axis definition is identical with Figure 11, therefore will not be repeated here；And the ash of the longitudinal axis
Rank brightness is brightness relative value.
It is virtual by the first of point P1 to point P2 lines in the measurement process for obtaining Figure 13 A results please refer to Fig. 4
Line divides into digital decile as shown in transverse axis, to measure by point P2 to point P1 gray-scale intensity；As for point P2 ' to point P1 ' even
Second dummy line of line and Figure 13 B and 13C measurement process as hereinbefore, therefore will not be repeated here.In addition, in Figure 13 A extremely
In 13C, the region shown between two dotted lines parallel with the longitudinal axis, then be the first section S1 and the second section S2 as shown in Figure 4.
As shown in Figure 13 A to 13C, either in red, green and blue pixel area, the first section S1 the first brightness
Integrated value A1 is respectively less than the second section S2 the second luminance integration value A2.In addition, in red, green and blue pixel area,
First luminance integration value A1 and the second luminance integration value A2 difference respectively may be about 29.78%, 30.86% and 26.32%；Its with
Semiconductor layer transparency in red, green and blue pixel area is almost consistent.
Test case 4
Figure 14 A to 14C are respectively the brightness measurement result figure of this test case, and it is respectively with the display device of embodiment 2
Red, green and blue pixel area measurement result figure, wherein the semiconductor layer of red, green and blue pixel area is saturating
Lightness respectively may be about 18%, 19% and 19%, and neighbouring pixel region is homochromy pixel cell.The test of this test case
Mode is identical with test case 1.In Figure 14 A into 14C, transverse axis definition is identical with Figure 11, therefore will not be repeated here；And the ash of the longitudinal axis
Rank brightness is brightness relative value.
It is virtual by the first of point P1 to point P2 lines in the measurement process for obtaining Figure 14 A results please refer to Fig. 7
Line divides into digital decile as shown in transverse axis, to measure by point P1 to point P2 gray-scale intensity；As for point P1 ' to point P2 ' even
Second dummy line of line and Figure 14 B and 14C measurement process as hereinbefore, therefore will not be repeated here.In addition, in Figure 14 A extremely
In 14C, the region shown between two dotted lines parallel with the longitudinal axis, then be the first section S1 and the second section S2 as shown in Figure 7.
As shown in Figure 14 A to 14C, either in red, green and blue pixel area, the first section S1 the first brightness
Integrated value A1 is respectively less than the second section S2 the second luminance integration value A2.In addition, in red, green and blue pixel area,
First luminance integration value A1 and the second luminance integration value A2 difference respectively may be about 18.98%, 19.79% and 19.15%；Its with
Semiconductor layer transparency in red, green and blue pixel area is almost consistent.
Test case 5
Figure 15 A to 15C are respectively the brightness measurement result figure of this test case, and it is respectively with the display device of embodiment 3
Red, green and blue pixel area measurement result figure, wherein the semiconductor layer of red, green and blue pixel area is saturating
Lightness respectively may be about 27%, 50% and 31%, and neighbouring pixel region is homochromy pixel cell.The test of this test case
Mode is identical with test case 1.In Figure 15 A into 15C, transverse axis definition is identical with Figure 11, therefore will not be repeated here；And the ash of the longitudinal axis
Rank brightness is brightness relative value.
It is virtual by the first of point P1 to point P2 lines in the measurement process for obtaining Figure 15 A results please refer to Figure 10
Line divides into digital decile as shown in transverse axis, to measure by point P1 to point P2 gray-scale intensity；As for point P1 ' to point P2 ' even
Second dummy line of line and Figure 15 B and 15C measurement process as hereinbefore, therefore will not be repeated here.In addition, in Figure 15 A extremely
In 15C, the region shown between two dotted lines parallel with the longitudinal axis, then be the first section S1 and the second section S2 as shown in Figure 10.
As shown in Figure 15 A to 15C, either in red, green and blue pixel area, the first section S1 the first brightness
Integrated value A1 is respectively less than the second section S2 the second luminance integration value A2.In addition, in red, green and blue pixel area,
First luminance integration value A1 and the second luminance integration value A2 difference respectively may be about 27.32%, 50.20% and 31.53%；Its with
Semiconductor layer transparency in red, green and blue pixel area is almost consistent.
Here, Figure 13 A to 15C of test case 3 to 5 measurement result more is calculated into the first section S1 luminance integration value
(second i.e. described in test case 1 is bright for (the first luminance integration value A1 i.e. described in test case 1) second section S2 luminance integration value
Spend integrated value A2), and calculate the first luminance integration value A1 and the second luminance integration value A2 ratio (A1/A2).In test case 3
In display device, in red, green and blue pixel area, the first luminance integration value A1 and the second luminance integration value A2 difference
It is different to respectively may be about 29.78%, 30.86% and 26.32%.In the display device of test case 4, in red, green and blue picture
In plain region, the first luminance integration value A1 and the second luminance integration value A2 difference respectively may be about 18.98%, 19.79% and
19.15%.In the display device of test case 5, in red, green and blue pixel area, the first luminance integration value A1 with
Second luminance integration value A2 difference respectively may be about 27.32%, 50.20% and 31.53%.Aforementioned result is arranged in Figure 16.
As shown in figure 16, in test case 3 to 5, by the semiconductor layer in adjustment red, green and blue pixel area
Transparency, the semiconductor layer for making the semiconductor layer transparency in green pixel area be more than in red and blue pixel area is transparent
Degree, can make A1/A2 ratios in green pixel area be more than A1/A2 ratios in red and blue pixel area.
Because human eye is most strong to the brightness susceptibility of green, therefore, in test case 3 to 5, by making green pixel area
In semiconductor layer transparency it is maximum, and the brightness of green pixel area can be lifted.In addition, result can in test case 3 to 5
Know, by the transparency of the semiconductor layer in adjustment pixel region, the brightness of the pixel region of different colours can be changed, and then adjust
The position of whole white point, as shown in figure 17；Especially since the adjustable cool colour color dot demand of blueness, but simultaneously not all shows and set
For the demand for having cool colour, therefore the transparency of the semiconductor layer in blue pixel area is compared with the semiconductor in green pixel area
Layer transparency is low.
In the present invention, display device further includes a display medium, and the display medium is on substrate.Display medium can be
One liquid crystal layer, an organic luminous layer or micro- light emitting diode.When display medium is a liquid crystal layer, display device is a liquid crystal
Display device (LCD).When display medium is an organic luminous layer, display device is an oganic light-emitting display device (OLED).
When display medium is micro- light emitting diode, display device is a micro- emitting diode display device (micro-LED
display)。
In addition, in the present invention, when substrate used in display device is plastics, flexible materials or film, display
Equipment can be a bendable display device, for example, bendable liquid crystal display, bendable oganic light-emitting display device or flexible
Decline emitting diode display device.
In the present invention, the display device obtained by previous embodiment can merge with contact panel and use, and be touched as one
Control display device.Meanwhile, display device or touch control display device obtained by present invention can be applied to this technology
Known to field on the electronic installation of any required display screen, such as display, mobile phone, notebook computer, video camera, photograph
Machine, music player, action navigation device, TV etc. need to show on the electronic installation of image.
Above-described embodiment is illustrated only for conveniently explanation, and the interest field that the present invention is advocated should be wanted with right certainly
Ask and be defined described in book, rather than be only limitted to above-described embodiment.
Claims (19)
1. a kind of display device, it is characterised in that include：
One substrate；
Semi-conductor layer, on the substrate；
One first insulating barrier, on the semiconductor layer；
One first electrode layer, on first insulating barrier, the first electrode layer includes multiple the extended along a first direction
One gate line；
One second insulating barrier, in the first electrode layer；
One the second electrode lay, on second insulating barrier, the second electrode lay includes multiple the extended along a second direction
One data wire, the first direction is different from the second direction；And
Multiple pixel regions, are the region defined by those first grid polar curves and those first data wires；
Wherein, in defining one first dummy line and one second dummy line in a pixel region therein, first dummy line and should
Second dummy line distinguishes the substantial parallel second direction；
Wherein, first dummy line is defined with one first section overlapping with the semiconductor layer, and defines second dummy line
With there is no an one second overlapping section with the semiconductor layer, first section and second section respectively with the first grid polar curve
There is a same distance, the length of first section is equal to the length of second section；
Wherein, when a light passes through the display device, first section, one first section brightness of correspondence, second section correspondence one
Second section brightness, the first section brightness has one first luminance integration value, and the second section brightness has one second brightness
Integrated value, the first luminance integration value is more than 0.4 and less than 1 with the ratio of the second luminance integration value.
2. display device according to claim 1, wherein, those pixel regions include a green pixel area and a blueness
Pixel region, and the ratio of the first luminance integration value and the second luminance integration value in the green pixel area is more than this
The ratio of the first luminance integration value and the second luminance integration value in blue pixel area.
3. display device according to claim 1, wherein, those pixel regions include a green pixel area and a red
Pixel region, and the ratio of the first luminance integration value and the second luminance integration value in the green pixel area is more than this
The ratio of the first luminance integration value and the second luminance integration value in red pixel area.
4. display device according to claim 1, wherein the first luminance integration value and the ratio of the second luminance integration value
Value is more than 0.6 and less than 0.8.
5. display device according to claim 1, further includes a shielding pattern layer, the shielding pattern layer is arranged at the substrate
Between the semiconductor layer.
6. display device according to claim 5, the wherein shielding pattern layer are overlapping with the semiconductor layer part.
7. display device according to claim 6, the wherein semiconductor layer have semi-conductor layer edge, the light-shielding pattern
Layer has the distance between a shading edge, and the semiconductor layer edge and the shading edge between 2 μm to 10 μm.
8. the transparency of display device according to claim 1, the wherein semiconductor layer is more than 0% and less than 60%.
9. a kind of display device, it is characterised in that include：
One substrate；
Semi-conductor layer, on the substrate；
One first insulating barrier, on the semiconductor layer；
One first electrode layer, on first insulating barrier, the first electrode layer includes multiple the extended along a first direction
One gate line；
One second insulating barrier, in the first electrode layer；
One the second electrode lay, on second insulating barrier, the second electrode lay includes multiple the extended along a second direction
One data wire, the first direction is different from the second direction；And
Multiple pixel regions, are the region defined by those first grid polar curves and those first data wires；
Wherein, defining has one first section and one second section in a pixel region therein, first section is substantially put down
Row the second direction simultaneously it is overlapping with the semiconductor layer, and the substantial parallel second direction of second section and with the semiconductor layer
There is no overlapping, first section has a same distance with the first grid polar curve respectively with second section, the length of first section
Length of the degree equal to second section；
Wherein, when a light passes through the display device, first section, one first section brightness of correspondence, second section correspondence one
Second section brightness, the first section brightness has one first luminance integration value, and the second section brightness has one second brightness
Integrated value, the first luminance integration value is more than 0.4 and less than 1 with the ratio of the second luminance integration value.
10. display device according to claim 9, wherein those pixel regions include a green pixel area and a blueness
Pixel region, and the ratio of the first luminance integration value and the second luminance integration value in the green pixel area is more than this
The ratio of the first luminance integration value and the second luminance integration value in blue pixel area.
11. display device according to claim 9, wherein those pixel regions include a green pixel area and a red
Pixel region, and the ratio of the first luminance integration value and the second luminance integration value in the green pixel area is more than this
The ratio of the first luminance integration value and the second luminance integration value in red pixel area.
12. display device according to claim 9, wherein the first luminance integration value and the ratio of the second luminance integration value
Value is more than 0.6 and less than 0.8.
13. the transparency of display device according to claim 9, the wherein semiconductor layer is more than 0% and less than 60%.
14. a kind of display device, it is characterised in that include：
One substrate；
One shielding pattern layer, on the substrate；
Semi-conductor layer, in the shielding pattern layer, and the semiconductor layer partly overlaps with the shielding pattern layer；
One first insulating barrier, on the semiconductor layer；
One first electrode layer, on first insulating barrier, the first electrode layer includes multiple the extended along a first direction
One gate line；
One second insulating barrier, in the first electrode layer；
One the second electrode lay, on second insulating barrier, the second electrode lay includes multiple the extended along a second direction
One data wire, the first direction is different from the second direction；And
Multiple pixel regions, are the region defined by those first grid polar curves and those first data wires；
Wherein, defining has one first section and one second section in a pixel region therein, first section is substantially put down
The row second direction is simultaneously overlapping with the semiconductor layer and not overlapping with the shielding pattern layer, and second section is substantial parallel should
Second direction is not simultaneously overlapping with the semiconductor layer and not overlapping with the shielding pattern layer, first section and second section point
There is not a same distance with the first grid polar curve, the length of first section is equal to the length of second section；
Wherein, when a light passes through the display device, first section, one first section brightness of correspondence, second section correspondence one
Second section brightness, the first section brightness has one first luminance integration value, and the second section brightness has one second brightness
Integrated value, the first luminance integration value is more than 0.4 and less than 1 with the ratio of the second luminance integration value.
15. display device according to claim 14, the wherein first electrode layer extend comprising multiple along the first direction
First grid polar curve, the second electrode lay includes multiple the first data wires extended along the second direction, and the display device bag
Multiple pixel regions are included, those pixel regions correspond respectively to those first grid polar curves and those first data wires and second number
The region defined according to line；Wherein, those pixel regions include a green pixel area and a blue pixel area, and in this
The ratio of the first luminance integration value and the second luminance integration value in green pixel area is more than in the blue pixel area
The first luminance integration value and the second luminance integration value ratio.
16. display device according to claim 14, the wherein first electrode layer extend comprising multiple along the first direction
First grid polar curve, the second electrode lay includes multiple the first data wires extended along the second direction, and the display device bag
Multiple pixel regions are included, those pixel regions correspond respectively to those first grid polar curves and those first data wires and second number
The region defined according to line；Wherein, those pixel regions include a green pixel area and a red pixel area, and in this
The ratio of the first luminance integration value and the second luminance integration value in green pixel area is more than in the red pixel area
The first luminance integration value and the second luminance integration value ratio.
17. display device according to claim 14, wherein the first luminance integration value and the second luminance integration value
Ratio is more than 0.6 and less than 0.8.
18. display device according to claim 14, the wherein semiconductor layer have semi-conductor layer edge, the shading figure
Pattern layer has the distance between a shading edge, and the semiconductor layer edge and the shading edge between 2 μm to 10 μm.
19. the transparency of display device according to claim 14, the wherein semiconductor layer is more than 0% and less than 60%.
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