CN106935463B - Bogey and dry etching equipment for dry etching - Google Patents
Bogey and dry etching equipment for dry etching Download PDFInfo
- Publication number
- CN106935463B CN106935463B CN201710107300.3A CN201710107300A CN106935463B CN 106935463 B CN106935463 B CN 106935463B CN 201710107300 A CN201710107300 A CN 201710107300A CN 106935463 B CN106935463 B CN 106935463B
- Authority
- CN
- China
- Prior art keywords
- frame
- substrate
- lower electrode
- dry etching
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001312 dry etching Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 230000003028 elevating effect Effects 0.000 claims description 12
- 230000007423 decrease Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical group O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 229910052573 porcelain Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 13
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000005684 electric field Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000000428 dust Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of bogey and dry etching equipment for dry etching, including the upper electrode and lower electrode being oppositely arranged, and it is set to the substrate to be etched of the one side towards the upper electrode on the lower electrode, the area of the lower electrode is not less than the area of substrate to be etched.The beneficial effects of the invention are as follows：Effective usable floor area of substrate is increased, the validity of substrate edges etching rate is promoted.
Description
Technical field
The present invention relates to technical field of liquid crystal production more particularly to a kind of bogeys for dry etching and dry
Method etching apparatus.
Background technology
In liquid crystal display device production industry, glass substrate is when carrying out dry etching, generally using plasma to glass
Substrate performs etching, as shown in Figure 1, the dry etching equipment in technology, including upper electrode (not shown) and lower part at present
Electrode 2, substrate 1 are carried on lower electrode 2, and the center of substrate 1 is overlapped with the center of lower electrode 2, and the area of substrate 1 is more than
The area of lower electrode 2, and substrate 1 and lower electrode 2 are generally rectangular configurations, substrate 1 exposes to the first of lower electrode 2
Region forms the annular frame structure by the four end to end formation in side, and the width a on each side of frame structure is 15mm, dry method
Etching apparatus further includes being used to support in the support construction of the first area of substrate 1, is formed using upper electrode and lower electrode
Electric field plasma guide and accelerate to realize the purpose performed etching to substrate, but since the area of substrate is big
In the area of lower electrode, cause the edge exposure of substrate in lower electrode, the fringe region of substrate is without electric field effect, to freedom
Base and ionic attraction are smaller, and etching rate is relatively low.
Invention content
In order to solve the above technical problem, the present invention provides a kind of bogeys for dry etching and dry etching to set
It is standby, promote the etching rate of substrate.
In order to achieve the above object, the technical solution adopted by the present invention is：A kind of bogey for dry etching, packet
The upper electrode and lower electrode being oppositely arranged are included, and is set to the one side towards the upper electrode on the lower electrode
Substrate to be etched, the area of the lower electrode is not less than the area of substrate to be etched.
Further, further include when the area of the lower electrode is more than the area of substrate to be etched, enclose set on to be etched
The frame of substrate surrounding is lost, the frame includes be completely covered by the region that the lower electrode does not carry substrate to be etched the
A part.
Further, the frame further includes the second part for covering substrate edge region to be etched.
Further, the second part is the rectangular loop structure by the four end to end formation in side, the width on each side
Degree is 2mm-3mm.
Further, the frame is made of ceramic material.
Further, the surface of the frame is coated with yttrium oxide.
Further, further include the lifting structure lifted for controlling the frame, the frame further includes exposing to institute
The Part III of lower electrode is stated, the lifting structure includes：
Lifting unit can be connect with the Part III；
Driving portion, for driving the lifting unit to convert between the first state and a second state；
The first state is that the lifting unit connect and drives with the Part III under the driving of the driving portion
The frame lifting；Second state is to be contacted with the lower electrode or the frame and the substrate side in the frame
Edge region contact after, the lifting unit continue decline to be detached with the Part III.
Further, the lifting unit is the elevating lever being drivingly connected with the driving portion, and the Part III is under
Portion's electrode is provided with the slot being inserted into for the elevating lever on one side.
Further, the elevating lever is polished rod, and the surface of the polished rod has the metal formed through anodized
Sull.
The present invention also provides a kind of dry etching equipments, including the above-mentioned bogey for dry etching.
The beneficial effects of the invention are as follows：Effective usable floor area of substrate is increased, the effective of substrate edges etching rate is promoted
Property.
Description of the drawings
Fig. 1 shows dry etching equipment structural schematic diagrams in the prior art；
Fig. 2 indicates dry etching equipment structure top view in one embodiment of the invention；
Fig. 3 indicates dry etching equipment structure top view in another embodiment of the present invention；
Fig. 4 indicates dry etching equipment structural schematic diagram when lifting unit is located at first state in another embodiment of the present invention；
Fig. 5 indicates dry etching equipment structural schematic diagram when lifting unit is located at the second state in another embodiment of the present invention；
Fig. 6 indicates border structure vertical view in another embodiment of the present invention；
Fig. 7 indicates border structure side view in another embodiment of the present invention.
Specific implementation mode
The feature and principle of the present invention are described in detail below in conjunction with attached drawing, illustrated embodiment is only used for explaining this hair
It is bright, but do not limit protection scope of the present invention.
As shown in Fig. 2, the present embodiment provides a kind of bogeys for dry etching, including the top electricity being oppositely arranged
Pole and lower electrode 2, and it is set to the substrate 1 to be etched of the one side towards the upper electrode on the lower electrode 2, institute
The area for stating lower electrode 2 is not less than the area of substrate 1 to be etched.
Projection of the substrate 1 to be etched on lower electrode 2 is fallen within completely in lower electrode 2 so that substrate 1 to be etched is whole
It is fully located in the electric field generated between upper electrode and lower electrode 2, to improve the whole etching rate of substrate 1.
In the present embodiment, when the area of the lower electrode 2 is more than the area of substrate 1 to be etched, enclose set on base to be etched
The frame 3 of 1 surrounding of plate, the frame 3 include the region for being completely covered by the lower electrode 2 and not carrying substrate 1 to be etched
First part, as shown in Figure 3.
When the area of the lower electrode 2 is more than substrate 1 to be etched, the lower electrode 2 exists not by base to be etched
The first part that plate 1 covers, in etching, if the first part is exposed domestic in the etched rings full of plasma, institute
First part is stated to be easy to be punctured by plasma, and the setting of frame 3 effectively avoids the generation of above-mentioned phenomenon, protects institute
State lower electrode 2.
Multiple through-holes are evenly arranged on the lower electrode 2, which is used to pass through to treat for cooling gas helium gas
Etch substrate 1 is cooled down, and helium is revealed in order to prevent, and in the present embodiment, the frame 3 further includes covering substrate 1 to be etched
The second part of fringe region.The second part of the frame 3 gently press (no external force, be only the frame 3 gravity) it is to be etched
The fringe region of substrate 1, avoids the leakage of helium, and is effectively guaranteed substrate 1 to be etched on the lower electrode 2
Positional stability.
Further, the second part is the rectangular loop structure by the four end to end formation in side, the width on each side
Degree b is 2mm-3mm.
Substrate 1 to be etched is usually rectangular configuration, and the frame 3 is the loop configuration by the four end to end formation in side,
Include the second part, the first part successively from inside to outside, the second part is covered in the side of substrate 1 to be etched
Edge, the first part is covered in the region for not carrying substrate 1 to be etched of the lower electrode 2, in order to avoid described second
The excessive etching edge rate for influencing substrate 1 to be etched of partial area, the narrower in width on each side of second part, this implementation
The width b on each side is 2mm-3mm in example, but is not limited thereto.
In the present embodiment, the frame is integrally formed, i.e., the described second part, the first part and v are not separable
, but overall structure.
It is in due to the frame 3 in the electric field that the upper electrode and the lower electrode 2 are formed, avoids 3 quilt of frame
Plasma bombardment generates dust or influences the reductions such as direction of an electric field etching quality, and in the present embodiment, the frame 3 is using ceramics
Material is made,
Further, the surface of the frame 3 is coated with yttrium oxide, can effectively reduce the dust of ion bombardment generation and sink
The risk that starch is fallen.
Further include the lifting structure for controlling the lifting of the frame 3 for the ease of picking and placeing for substrate 1 to be etched, it is described
The specific constructive form of lifting structure can there are many, it is described in the present embodiment as long as realizing the lifting of the frame 3
Frame 3 further includes the Part III for exposing to the lower electrode 2, and the lifting structure includes：
Lifting unit can be connect with the Part III；
Driving portion, for driving the lifting unit to convert between the first state and a second state；
The first state is that the lifting unit connect and drives with the Part III under the driving of the driving portion
The frame 3 lifts, as shown in Figure 4；Second state is to be contacted with the lower electrode 2 or the side in the frame 3
Frame 3 contacted with 1 fringe region of the substrate after, the lifting unit continue decline to be detached with the Part III, such as Fig. 5 institutes
Show.
When needing to place substrate 1 to be etched, the lifting unit drives the frame 3 to rise under the driving of the driving portion
To predeterminated position, after substrate 1 to be etched is positioned over the lower electrode 2, the lifting unit drives the frame 3 in the drive
Decline under the driving in dynamic portion, until the frame 3 is contacted with the lower electrode 2 or the frame 3 and 1 marginal zone of the substrate
Domain contact after, the lifting unit continue decline, the lifting unit is detached with the Part III at this time, the lifting unit with it is described
Using such separable connection type between Part III, prevent the lifting unit in the frame 3 and the lower electrode 2
Contact or the frame 3 still decline after being contacted with 1 fringe region of the substrate, are excessive to the pressure of lower electrode 2 or substrate 1
And lower electrode 2 or substrate 1 are caused to damage.
The specific constructive form of the lifting unit and the specific connection type of the lifting unit and the Part III are equal
Can there are many, as long as realizing the lifting of the frame 3, in the present embodiment, the lifting unit be and the driving portion drive
The elevating lever 4 of dynamic connection, the Part III are inserted close to being provided on one side for lower electrode 2 for what the elevating lever 4 was inserted into
Slot 31, as shown in Figure 6 and Figure 7.
In the present embodiment, the elevating lever 4 is polished rod, and the surface of the polished rod has the gold formed through anodized
Belong to sull, avoids electricity of the elevating lever 4 made of simple metal material between the upper electrode, lower electrode 2
Field has an impact and influences etching rate.
The specific constructive form of the driving portion can there are many, as long as realize driving lifting unit lifting to drive the side
Frame 3 lifts, and in the present embodiment, the driving portion includes：
Ball-screw is connect with the elevating lever 4；
Servo motor, for driving the ball screw turns to drive the elevating lever 4 to lift.
The present invention also provides a kind of dry etching equipments, including the above-mentioned bogey for dry etching.
The above is present pre-ferred embodiments, it should be noted that those skilled in the art,
Under the premise of not departing from principle of the present invention, several improvements and modifications can also be made, these improvements and modifications also should be regarded as
The scope of the present invention.
Claims (7)
1. a kind of bogey for dry etching, including the upper electrode and lower electrode that are oppositely arranged, and be set to
The substrate to be etched of one side towards the upper electrode on the lower electrode, which is characterized in that the face of the lower electrode
Area of the product not less than substrate to be etched；
Further include when the area of the lower electrode is more than the area of substrate to be etched, enclose set on the side of substrate surrounding to be etched
Frame, the frame include the first part for being completely covered by the region that the lower electrode does not carry substrate to be etched；
The frame further includes the second part for covering substrate edge region to be etched；
Further include the lifting structure for controlling frame lifting, the frame further includes expose to the lower electrode the
Three parts, the lifting structure include：
Lifting unit can be connect with the Part III；
Driving portion, for driving the lifting unit to convert between the first state and a second state；
The first state is that the lifting unit connect with the Part III under the driving of the driving portion and drives described
Frame lifts；Second state is to be contacted with the lower electrode or the frame and the substrate edges area in the frame
Domain contact after, the lifting unit continue decline to be detached with the Part III.
2. the bogey according to claim 1 for dry etching, which is characterized in that the second part is by four
The width of the rectangular loop structure of a end to end formation in side, each side is 2mm-3mm.
3. the bogey according to claim 1 or 2 for dry etching, which is characterized in that the frame is using pottery
Porcelain material is made.
4. the bogey according to claim 3 for dry etching, which is characterized in that the surface of the frame coats
There is yttrium oxide.
5. the bogey according to claim 1 for dry etching, which is characterized in that the lifting unit be with it is described
The elevating lever that driving portion is drivingly connected, the Part III are inserted into close to being provided on one side for lower electrode for the elevating lever
Slot.
6. the bogey according to claim 5 for dry etching, which is characterized in that the elevating lever is polished rod,
The surface of the polished rod has the metal-oxide film formed through anodized.
7. a kind of dry etching equipment, which is characterized in that including claim 1-6 any one of them holding for dry etching
It carries and sets.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710107300.3A CN106935463B (en) | 2017-02-27 | 2017-02-27 | Bogey and dry etching equipment for dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710107300.3A CN106935463B (en) | 2017-02-27 | 2017-02-27 | Bogey and dry etching equipment for dry etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106935463A CN106935463A (en) | 2017-07-07 |
| CN106935463B true CN106935463B (en) | 2018-09-14 |
Family
ID=59424177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710107300.3A Expired - Fee Related CN106935463B (en) | 2017-02-27 | 2017-02-27 | Bogey and dry etching equipment for dry etching |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106935463B (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05226295A (en) * | 1992-01-31 | 1993-09-03 | Sharp Corp | Dry etching apparatus for tft-lcd |
| JPH08339988A (en) * | 1995-06-09 | 1996-12-24 | Sony Corp | Dry-etching device |
| JP3880896B2 (en) * | 2002-07-16 | 2007-02-14 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
| JP2004119760A (en) * | 2002-09-27 | 2004-04-15 | Nec Kansai Ltd | Dry etching system |
| US20060005771A1 (en) * | 2004-07-12 | 2006-01-12 | Applied Materials, Inc. | Apparatus and method of shaping profiles of large-area PECVD electrodes |
| CN204779797U (en) * | 2015-06-25 | 2015-11-18 | 上海和辉光电有限公司 | CVD film former |
-
2017
- 2017-02-27 CN CN201710107300.3A patent/CN106935463B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN106935463A (en) | 2017-07-07 |
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| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
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Granted publication date: 20180914 |