CN106932105A - A kind of Infrared Detectors and preparation method thereof - Google Patents
A kind of Infrared Detectors and preparation method thereof Download PDFInfo
- Publication number
- CN106932105A CN106932105A CN201511031614.7A CN201511031614A CN106932105A CN 106932105 A CN106932105 A CN 106932105A CN 201511031614 A CN201511031614 A CN 201511031614A CN 106932105 A CN106932105 A CN 106932105A
- Authority
- CN
- China
- Prior art keywords
- layer
- contact line
- thermal resistor
- sacrifice
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 238000010521 absorption reaction Methods 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims description 19
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- 229920000620 organic polymer Polymers 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 208000002925 dental caries Diseases 0.000 abstract description 5
- 238000012938 design process Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000007787 solid Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 243
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 208000005189 Embolism Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
In Infrared Detectors that the present invention is provided and preparation method thereof, including：A substrate is provided, substrate surface has reflecting layer；Sacrifice layer, contact line, thermal resistor layer and infrared absorption layer are formed, sacrifice layer is located at multiple holes are formed between reflecting layer and contact line, between contact line and thermal resistor layer and between thermal resistor layer and infrared absorption layer, and in contact line respectively；Removal sacrifice layer, cavity is formed between contact line and reflecting layer, between thermal resistor layer and contact line and between infrared absorption layer and thermal resistor layer respectively.In the present invention, multiple cavitys are formed in Infrared Detectors respectively, increased the area of thermal resistor layer so that the resistance in Infrared Detectors is adjustable, increased the area of infrared absorption layer, reduce the thermal capacitance loss of Infrared Detectors, improve the overall performance of device.Also, multiple holes are formed in contact line so that the structure of Infrared Detectors is more solid and reliable, more facilitated in design and manufacturing process.
Description
Technical field
The present invention relates to Infrared Detectors technical field, more particularly to a kind of Infrared Detectors and preparation method thereof.
Background technology
Infrared Detectors using MEMS (Microelectro Mechanical Systems, abbreviation MEMS) includes infrared focal plane array and temperature sensor, and its operation principle is：Infrared focal plane array absorbs infra-red radiation causes own temperature to change, cause the temperature of the thermo-sensitive material of temperature sensor that corresponding change occurs, temperature change causes that the electronic movement velocity in thermo-sensitive material is accelerated, the resistivity of thermo-sensitive material is caused to become big, so as to detect the change of temperature, the power of infra-red radiation is finally given.According to market orientation and the development of new technology, following infrared focal plane array will develop towards small size and big array direction, and this requires to be done on the area of very little with high-resolution MEMS.
The content of the invention
It is an object of the invention to provide a kind of Infrared Detectors and preparation method thereof, make the resistance in Infrared Detectors adjustable by the area for increasing thermo-sensitive material.
In order to solve the above technical problems, the present invention provides a kind of preparation method of Infrared Detectors, including：
A substrate is provided, the substrate surface has reflecting layer；
Form sacrifice layer, contact line, thermal resistor layer and infrared absorption layer, the sacrifice layer is located at multiple holes are formed between the reflecting layer and the contact line, between the contact line and the thermal resistor layer and between the thermal resistor layer and the infrared absorption layer, and in the contact line respectively；
The sacrifice layer is removed, cavity is formed respectively between the contact line and the reflecting layer, between the thermal resistor layer and the contact line and between the infrared absorption layer and the thermal resistor layer.
Optionally, the step of forming the sacrifice layer, the contact line, the thermal resistor layer and the infrared absorption layer includes：
The substrate also includes the first interconnection structure and the second interconnection structure positioned at the reflecting layer both sides, and the first sacrifice layer is formed on the reflecting layer；
Form the first contact line and the second contact line, first contact line is electrically connected with first interconnection structure, second contact line is electrically connected with second interconnection structure, and all extend to the first sacrifice layer top, and the first contact window is formed in first contact line, form the second contact window in second contact line；
The second sacrifice layer is formed, second sacrifice layer covers first sacrifice layer, first contact line and second contact line, and exposes first contact window and second contact window；
Thermal resistor layer is formed, the thermal resistor layer covers first contact window, second contact window and second sacrifice layer；
Formation 3rd sacrifice layer, thermal resistor layer described in the 3rd sacrifice layer covering part, the exposed thermal resistor layer is used as sensing window；
Infrared absorption layer is formed, the infrared absorption layer covers the bottom wall and side wall of the 3rd sacrifice layer and the sensing window.
Optionally, the step of removing the sacrifice layer includes：Using plasma technique removes first sacrifice layer, second sacrifice layer and the 3rd sacrifice layer；The first cavity is formed between first contact line and second contact line and the reflecting layer；The second cavity is formed between the thermal resistor layer and first contact line and second contact line；The 3rd cavity is formed between the infrared absorption layer and the thermal resistor layer.
Optionally, the step of forming first contact line and second contact line includes：
Forming first supports film layer, the first support film layer to cover first sacrifice layer and the part substrate；
Form electrode film layer, electrode film layer covering the first support film layer, first interconnection structure and second interconnection structure；
The electrode film layer and the first support film layer are etched, first contact line and second contact line is formed.
Optionally, also include：
Forming second supports film layer, the second support film layer to cover the electrode film layer；
The second support film layer is also etched while etching the electrode film layer and the first support film layer, and the second support film layer of the part in the first contact electrode wires and second contact line is etched respectively, the electrode film layer is exposed, first contact window and second contact window are formed respectively.
Optionally, also include：Etch the second support film layer and the electrode film layer forms the multiple hole, the multiple hole exposure the first support film layer.
Optionally, first contact line is broken line, pectination or helical form, and second contact line is broken line, pectination or helical form.
Optionally, the material of first sacrifice layer is amorphous carbon, organic polymer, oxide, germanium or germanide, and thickness is 200nm~1000nm；The material of second sacrifice layer is amorphous carbon, organic polymer, oxide, germanium or germanide, and thickness is 300nm~2000nm；The material of the 3rd sacrifice layer is amorphous carbon, organic polymer, oxide, germanium or germanide, and thickness is 200nm~1000nm.
Optionally, the material of the thermal resistor layer is non-crystalline silicon, and thickness is 100nm~300nm；The infrared absorption layer includes the silicon nitride, titanium coating and the titanium nitride metal layer that are sequentially depositing, or silicon nitride, titanium nitride metal layer and the silicon nitride being sequentially depositing.
Accordingly, the present invention also provides a kind of Infrared Detectors, including：
Substrate, the substrate surface has reflecting layer；
Contact line, thermal resistor layer and infrared absorption layer, it is respectively formed between the contact line and the reflecting layer, between the thermal resistor layer and the contact line and between the infrared absorption layer and the thermal resistor layer in cavity, and the contact line and is formed with multiple holes.
Compared with prior art, Infrared Detectors that the present invention is provided and preparation method thereof has advantages below：
In described Infrared Detectors and preparation method thereof, using multilayer sacrifice layer, most multilayer sacrifice layer removal at last, multiple cavitys are formed in Infrared Detectors respectively, the area of thermal resistor layer is increased so that the resistance in Infrared Detectors is adjustable, simultaneously, the area of infrared absorption layer is increased, reduces the thermal capacitance loss of Infrared Detectors, improve the overall performance of device.Also, multiple holes are formed in contact line so that the structure of Infrared Detectors is more solid and reliable, more facilitated in design and manufacturing process.
Brief description of the drawings
Fig. 1 is the flow chart of the preparation method of Infrared Detectors in one embodiment of the invention；
Fig. 2 is the generalized section of substrate in one embodiment of the invention；
Fig. 3 is to form the generalized section of the first sacrifice layer in one embodiment of the invention；
Fig. 4 is to form the top view of the first contact line and the second contact line in one embodiment of the invention；
Fig. 5 is the generalized section of the support film layer of formation second in one embodiment of the invention；
Fig. 6 is to form the generalized section of the first contact line and the second contact line in one embodiment of the invention；
Fig. 7 is to form the top view of the first contact line and the second contact line in another embodiment of the present invention；
Fig. 8 is to form the generalized section of the second sacrifice layer in one embodiment of the invention；
Fig. 9 is the generalized section of formation thermal resistor layer in one embodiment of the invention；
Figure 10 is the generalized section of formation 3rd sacrifice layer in one embodiment of the invention；
Figure 11 is the generalized section of formation infrared absorption layer in one embodiment of the invention；
Figure 12 is the generalized section of Infrared Detectors in one embodiment of the invention.
Specific embodiment
Infrared Detectors of the invention and preparation method thereof is described in more detail below in conjunction with schematic diagram, which show the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change invention described herein, and still realize advantageous effects of the invention.Therefore, description below is appreciated that widely known for those skilled in the art, and is not intended as limitation of the present invention.
For clarity, not describing whole features of practical embodiments.In the following description, known function and structure is not described in detail, because they can make the present invention chaotic due to unnecessary details.It will be understood that in the exploitation of any practical embodiments, it is necessary to make a large amount of implementation details to realize the specific objective of developer, such as, according to about system or the limitation about business, another embodiment is changed into by one embodiment.Additionally, it should think that this development is probably complicated and time-consuming, but it is only to those skilled in the art routine work.
The present invention is more specifically described by way of example referring to the drawings in the following passage.According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing in the form of simplifying very much and uses non-accurately ratio, is only used to conveniently, lucidly aid in illustrating the purpose of the embodiment of the present invention.
Core concept of the invention is, in described Infrared Detectors and preparation method thereof, including：A substrate is provided, substrate surface has reflecting layer；Sacrifice layer, contact line, thermal resistor layer and infrared absorption layer are formed, sacrifice layer is located at multiple holes are formed between reflecting layer and contact line, between contact line and thermal resistor layer and between thermal resistor layer and infrared absorption layer, and in contact line respectively；Removal sacrifice layer, cavity is formed between contact line and reflecting layer, between thermal resistor layer and contact line and between infrared absorption layer and thermal resistor layer respectively.In the present invention, multiple cavitys are formed in Infrared Detectors respectively, increased the area of thermal resistor layer so that the resistance in Infrared Detectors is adjustable, increased the area of infrared absorption layer, reduce the thermal capacitance loss of Infrared Detectors, improve the overall performance of device.Also, multiple holes are formed in contact line so that the structure of Infrared Detectors is more solid and reliable, more facilitated in design and manufacturing process.
The flow chart of the preparation method of the Infrared Detectors provided according to above-mentioned core concept, the present invention is as shown in figure 1, specifically include following steps：
Step S11：A substrate is provided, the substrate surface has reflecting layer；
Step S12：Form sacrifice layer, contact line, thermal resistor layer and infrared absorption layer, the sacrifice layer is located at multiple holes are formed between the reflecting layer and the contact line, between the contact line and the thermal resistor layer and between the thermal resistor layer and the infrared absorption layer, and in the contact line respectively；
Step S13：The sacrifice layer is removed, cavity is formed respectively between the contact line and the reflecting layer, between the thermal resistor layer and the contact line and between the infrared absorption layer and the thermal resistor layer.
The preparation method of Infrared Detectors is illustrated below in conjunction with Fig. 2 to Figure 12, Fig. 2 to Figure 12 is the schematic diagram of device architecture in the preparation method of Infrared Detectors in one embodiment of the invention.
First, perform step S11, as shown in Figure 3, one substrate 100 is provided, the substrate 100 includes the substrate 110 and the interlayer dielectric layer 120 on the substrate 110 with control circuit (to show in figure), there is the first interconnection structure 121, the second interconnection structure 122 and reflecting layer 123, the first interconnection structure 121 and the second interconnection structure 122 are respectively positioned at the both sides in reflecting layer 123 in the interlayer dielectric layer 120.The interconnection structure 122 of first interconnection structure 121 and second respectively includes the electric plug of multilayer interconnection line and connection adjacent layer interconnection line.In addition, other device architectures can also be formed with substrate 100, such as amplifier, D/A converter, analog processing circuit and/or digital processing circuit, interface circuit etc., the method for forming these device architectures can be CMOS technology, be not described in detail herein.Wherein, first interconnection structure 121 and the first interconnection structure 122 can include embolism and interconnection line, its specific structure needs to be determined according to actual conditions, and the material in reflecting layer 123 is selected from one of aluminium, titanium, zinc, silver, gold, copper, tungsten, cobalt, nickel, tantalum, platinum these metals or their any combination.
Then, step S12 is performed, sacrifice layer, contact line, thermal resistor layer and infrared absorption layer is formed, with reference to the specific steps that Fig. 3~Figure 11 illustrates to form sacrifice layer, contact line, thermal resistor layer and infrared absorption layer：
First, with reference to shown in Fig. 3, a sacrifice layer is formed on the substrate 100, in the present embodiment, the sacrifice layer is, for example, amorphous carbon, organic polymer, oxide, germanium or germanide, thickness is 200nm~1000nm, and afterwards using photoetching and etching technics removal part amorphous carbon, the amorphous carbon on residual reflection layer 123 and part substrate 100 is the first sacrifice layer 210.The method for forming amorphous carbon is plasma enhanced chemical vapor deposition (PECVD) technique, and the parameter of plasma reinforced chemical vapour deposition technique is：Temperature range is 250 DEG C~420 DEG C, and air pressure range is 1torr~20torr, and RF power brackets are 800W~2000W, and reacting gas includes：C3H6And He, reaction gas flow is 1000sccm~4200sccm, wherein C3H6：The volume ratio scope of He is 2：1~10：1.It should be appreciated that above-mentioned technological parameter is only preferred example, and it is not used to the limitation present invention.
Then, with reference to shown in Fig. 4~Fig. 7, the first contact line 301 and the second contact line 302 are formed on the substrate 100, first contact line 301 is electrically connected with first interconnection structure 121, second contact line 302 is electrically connected with second interconnection structure 122, first contact line 301 and the second contact line 302 extend to the top of first sacrifice layer 210, and first form the first contact window 3011 in contact line 301, the second contact window 3021 is formed in second contact line 302.Specifically included in the present embodiment, the step of form first contact line 301, the second contact line 302, the first contact window 3011 and the second contact window 3021：
First, with reference to shown in Fig. 5, form first and support film layer 310, the first support film layer 310 to cover first sacrifice layer 310 and the part substrate 110, the material of the first support film layer 310 is, for example, silicon nitride, and thickness is, for example, 200nm~600nm；Afterwards, sequentially form the support film layer 330 of electrode film layer 320 and second, the electrode film layer 320 covers the first support film layer 310, first interconnection structure 121 and second interconnection structure 122 and the part substrate 100, the material of the electrode film layer 320 is, for example, Titanium, thickness is, for example, 10nm~100nm, the second support film layer 330 covers the electrode film layer 320, and the material of the second support film layer 330 is, for example, silicon nitride, and thickness is, for example, 10nm~100nm.In the present embodiment, the first support film layer 310 and second support film layer 330 is used for guard electrode film layer 320, it is ensured that electrical contact performance is good；
Secondly, the second support film layer 330, the electrode film layer 320 and the first support film layer 310 are sequentially etched, first contact line 301 and second contact line 302 is formed.As can be seen from Figure 4, first contact line 301 and second contact line 302 are broken line, etch the second support film layer 330, when the electrode film layer 320 and the first support film layer 310, so that electrode film layer 320 forms meander line structure, with reference to shown in Fig. 6, electrode film layer 320 is electrically connected with the first interconnection structure 121 and the second interconnection structure 122, so that the first contact line 301 and the second contact line 302 reduce the area of contact line while electric connection with the first interconnection structure 121 and the second interconnection structure 122 respectively, so as to can subsequently increase the area of the thermal resistor layer of formation.Additionally, in other embodiment of the invention, with reference to shown in Fig. 7, first contact line 301 can also be pectination, or can also form helical form, likewise, second contact line 302 can also be pectination, or can also form helical form；
It should be noted that, while etching forms the first contact line 301 and the second contact line 302, also etch the second support film layer 330 and the electrode film layer 320, multiple holes 311,321 are formed in the contact line 302 of first contact line 301 and second, the multiple hole 311,321 exposes the first support film layer 310.In the present embodiment, forming multiple holes 311,321 can further reduce the area of contact line, so as to increase the area of thermal resistor layer, and cause that the structure of Infrared Detectors is more solid and reliable, more facilitate in design and manufacturing process.Additionally, in other embodiment of the invention, with reference to shown in Fig. 7, first contact line 301 can also be pectination, or can also form helical form, likewise, second contact line 302 can also be pectination, or can also form helical form.Also, there are multiple holes 311,321 in the first contact line 301 and the second contact line 302.
Again, with continued reference to shown in Fig. 6, etch part the second support film layer 330 in the first contact electrode wires 301 and second contact line 302 respectively again, expose the part electrode film layer 320, form first contact window 3011 and second contact window 3021 respectively, the window of the first contact window 3011 and the second contact window 3021 respectively as the electric connection of follow-up thermal resistor layer and the first contact line 301 and the second contact line 302.
Then, with reference to shown in Fig. 8, form the second sacrifice layer 220, second sacrifice layer 220 covers first sacrifice layer 210, first contact line 301 and second contact line 302, and removes second sacrifice layer 320 on first contact window 3011 and second contact window 3021.In the present embodiment, the material of second sacrifice layer 220 is amorphous carbon, organic polymer, oxide, germanium or germanide, the thickness of the second sacrifice layer 220 is 300nm~2000nm, and the process for forming the second sacrifice layer 220 is identical with the process of the first sacrifice layer 210, and therefore not to repeat here.
With reference to shown in Fig. 9, thermal resistor layer 400 is formed, the thermal resistor layer 400 covers first contact window 3011, second contact window 3021 and second sacrifice layer 220.In the present embodiment, the thermo-sensitive material that thermal resistor layer 400 changes as temperature sensor, the thermal resistor layer 400 is non-crystalline silicon, and the thickness of the thermal resistor layer 400 is 100nm~300nm.
Afterwards, with reference to shown in Figure 10, form 3rd sacrifice layer 230, the 3rd sacrifice layer 230 covers the thermal resistor layer 400, remove part 3rd sacrifice layer 230 again the part thermal resistor layer 400 is exposed, the exposed thermal resistor layer 400 is connected as sensing window 231 with the infrared absorption layer being subsequently formed.In the present embodiment, the material of the 3rd sacrifice layer 230 is amorphous carbon, organic polymer, oxide, germanium or germanide, and the thickness of 3rd sacrifice layer 230 is 200nm~1000nm.
In addition, sensing window 231 shown in Figure 10 is located in the middle of thermal resistor layer 400, then, in other embodiments of the invention, sensing window can also be arranged at the two ends in thermal resistor layer 400, or simultaneously in the centre and two ends of thermal resistor layer 400, so as to increase the contact area between infrared absorption layer and thermal resistor layer 400.
With reference to shown in Figure 11, infrared absorption layer 500 is formed, the infrared absorption layer 500 covers the bottom wall and side wall of the 3rd sacrifice layer 230 and the sensing window 231.In the present embodiment, the infrared absorption layer 500 includes the silicon nitride 510, titanium coating 520 and the titanium nitride metal layer 530 that are sequentially depositing, and thickness is respectively 5nm~100nm, 5nm~50nm, 5nm~50nm.Additionally, the infrared absorption layer 500 can also be silicon nitride, titanium nitride metal layer and the silicon nitride layer being sequentially depositing.
Finally, step S13 is performed, with reference to shown in Figure 12, first sacrifice layer 210, second sacrifice layer 220 and the 3rd sacrifice layer 230 is removed.In the present embodiment, first sacrifice layer 210, second sacrifice layer 220 and the 3rd sacrifice layer 230 are etched using oxygen plasma body technology, amorphous carbon generates carbon dioxide with oxygen plasma precursor reactant, and is ashed removal.The first cavity 610 is formed between first contact line 301 and second contact line 302 and the reflecting layer 123, the second cavity 620 is formed between the thermal resistor layer 400 and first contact line 301 and second contact line 302, the 3rd cavity 630 is formed between the infrared absorption layer 500 and the thermal resistor layer 400.In the present invention, using three layers of sacrifice layer, most three layers of sacrifice layer removal at last, three cavitys are formed in Infrared Detectors respectively, the area of thermal resistor layer is increased so that the resistance in Infrared Detectors is adjustable, simultaneously, the area of infrared absorption layer is increased, reduces the thermal capacitance loss of Infrared Detectors, improve the overall performance of device.
Accordingly, with reference to shown in Figure 12, the present invention also provides a kind of Infrared Detectors, including：
Substrate 100, the substrate 100 includes the substrate 110 and the interlayer dielectric layer 120 on the substrate 110 with control circuit, and reflecting layer 123 and respectively position are formed with the interlayer dielectric layer 120
In first interconnection structure 121 and the second interconnection structure 122 of the both sides of the reflecting layer 123；
First contact line and the second contact line, first contact line is electrically connected with first interconnection structure 121, second contact line is electrically connected with second interconnection structure 122, and the first contact window 3011 is formed in first contact line, the second contact window 3012 is formed in second contact line, the first cavity 610 is formed between first contact line and second contact line and the reflecting layer 123；
Thermal resistor layer 400, the thermal resistor layer 400 covers first contact window 3011 and second contact window 3012, and the second cavity 620 is formed between the thermal resistor layer 400 and first contact line and second contact line；
Infrared absorption layer 500, the infrared absorption layer 500 is connected with the part thermal resistor layer 400, and the 3rd cavity 630 is formed between the thermal resistor layer 400.
In sum, in Infrared Detectors of the invention and preparation method thereof, including：A substrate is provided, substrate surface has reflecting layer；Sacrifice layer, contact line, thermal resistor layer and infrared absorption layer are formed, sacrifice layer is located at multiple holes are formed between reflecting layer and contact line, between contact line and thermal resistor layer and between thermal resistor layer and infrared absorption layer, and in contact line respectively；Removal sacrifice layer, cavity is formed between contact line and reflecting layer, between thermal resistor layer and contact line and between infrared absorption layer and thermal resistor layer respectively.In the present invention, multiple cavitys are formed in Infrared Detectors respectively, increased the area of thermal resistor layer so that the resistance in Infrared Detectors is adjustable, increased the area of infrared absorption layer, reduce the thermal capacitance loss of Infrared Detectors, improve the overall performance of device.Also, multiple holes are formed in contact line so that the structure of Infrared Detectors is more solid and reliable, more facilitated in design and manufacturing process.
Obviously, those skilled in the art can carry out various changes and modification without departing from the spirit and scope of the present invention to the present invention.So, if these modifications of the invention and modification belong within the scope of the claims in the present invention and its equivalent technologies, then the present invention is also intended to comprising these changes and modification.
Claims (10)
1. a kind of preparation method of Infrared Detectors, it is characterised in that including：
A substrate is provided, the substrate surface has reflecting layer；
Sacrifice layer, contact line, thermal resistor layer and infrared absorption layer are formed, the sacrifice layer is located at respectively
Between the reflecting layer and the contact line, between the contact line and the thermal resistor layer and the heat
Multiple holes are formed between quick resistive layer and the infrared absorption layer, and in the contact line；
The sacrifice layer is removed, between the contact line and the reflecting layer, the thermal resistor layer and institute
State between contact line and form cavity respectively between the infrared absorption layer and the thermal resistor layer.
2. the preparation method of Infrared Detectors as claimed in claim 1, it is characterised in that formed described sacrificial
The step of domestic animal layer, the contact line, the thermal resistor layer and infrared absorption layer, includes：
The substrate also includes the first interconnection structure and the second interconnection structure positioned at the reflecting layer both sides,
The first sacrifice layer is formed on the reflecting layer；
The first contact line and the second contact line are formed, first contact line is electrical with first interconnection structure
Connection, second contact line is electrically connected with second interconnection structure, and it is sacrificial to all extend to described first
Domestic animal layer top, and forms the first contact window in first contact line, the is formed in second contact line
Two contact windows；
The second sacrifice layer is formed, second sacrifice layer covers first sacrifice layer, first contact line
With second contact line, and first contact window and second contact window are exposed；
Thermal resistor layer is formed, the thermal resistor layer covers first contact window, second contact
Window and second sacrifice layer；
3rd sacrifice layer is formed, thermal resistor layer described in the 3rd sacrifice layer covering part is exposed described
Thermal resistor layer is used as sensing window；
Infrared absorption layer is formed, the infrared absorption layer covers the 3rd sacrifice layer and the sensing window
Bottom wall and side wall.
3. the preparation method of Infrared Detectors as claimed in claim 2, it is characterised in that removal is described sacrificial
The step of domestic animal layer, includes：Using plasma technique remove first sacrifice layer, second sacrifice layer with
And the 3rd sacrifice layer；Formed between first contact line and second contact line and the reflecting layer
First cavity；Second is formed between the thermal resistor layer and first contact line and second contact line
Cavity；The 3rd cavity is formed between the infrared absorption layer and the thermal resistor layer.
4. the preparation method of Infrared Detectors as claimed in claim 2, it is characterised in that form described the
The step of one contact line and second contact line, includes：
Form first and support film layer, the first support film layer covers first sacrifice layer and part is described
Substrate；
Form electrode film layer, electrode film layer covering the first support film layer, first interconnection structure
And second interconnection structure；
The electrode film layer and the first support film layer are etched, first contact line and described second is formed
Contact line.
5. the preparation method of Infrared Detectors as claimed in claim 4, it is characterised in that also include：
Forming second supports film layer, the second support film layer to cover the electrode film layer；
The second support film layer is also etched while etching the electrode film layer and the first support film layer,
And etch respectively it is described first contact electrode wires and second contact line on part it is described second support film layer,
The electrode film layer is exposed, first contact window and second contact window are formed respectively.
6. the preparation method of Infrared Detectors as claimed in claim 4, it is characterised in that also include：Carve
Lose the second support film layer and the electrode film layer forms the multiple hole, the multiple hole exposure is described
First support film layer.
7. the preparation method of the Infrared Detectors as described in claim 2~6, it is characterised in that described first
Contact line is broken line, pectination or helical form, and second contact line is broken line, pectination or helical form.
8. the preparation method of the Infrared Detectors as described in claim 2~6, it is characterised in that described first
The material of sacrifice layer is amorphous carbon, organic polymer, oxide, germanium or germanide, and thickness is
200nm~1000nm；The material of second sacrifice layer be amorphous carbon, organic polymer, oxide, germanium or
Germanide, thickness is 300nm~2000nm；The material of the 3rd sacrifice layer be amorphous carbon, organic polymer,
Oxide, germanium or germanide, thickness are 200nm~1000nm.
9. the preparation method of Infrared Detectors as claimed in claim 1, it is characterised in that the temperature-sensitive electricity
The material of resistance layer is non-crystalline silicon, and thickness is 100nm~300nm；The infrared absorption layer includes what is be sequentially depositing
Silicon nitride, titanium coating and titanium nitride metal layer, or be sequentially depositing silicon nitride, titanium nitride metal layer and
Silicon nitride.
10. a kind of Infrared Detectors, it is characterised in that including：
Substrate, the substrate surface has reflecting layer；
Contact line, thermal resistor layer and infrared absorption layer, between the contact line and the reflecting layer, institute
State between thermal resistor layer and the contact line and divide between the infrared absorption layer and the thermal resistor layer
It is not formed with cavity, and the contact line and is formed with multiple holes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511031614.7A CN106932105A (en) | 2015-12-31 | 2015-12-31 | A kind of Infrared Detectors and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511031614.7A CN106932105A (en) | 2015-12-31 | 2015-12-31 | A kind of Infrared Detectors and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106932105A true CN106932105A (en) | 2017-07-07 |
Family
ID=59444728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201511031614.7A Pending CN106932105A (en) | 2015-12-31 | 2015-12-31 | A kind of Infrared Detectors and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106932105A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113594193A (en) * | 2021-09-30 | 2021-11-02 | 西安中科立德红外科技有限公司 | Hybrid imaging detector chip based on semiconductor integrated circuit and preparation method |
| CN113720480A (en) * | 2021-03-26 | 2021-11-30 | 北京北方高业科技有限公司 | Infrared detector mirror image element based on CMOS (complementary metal oxide semiconductor) process and infrared detector |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005034248A1 (en) * | 2003-10-09 | 2005-04-14 | Ocas Corp. | Bolometric infrared sensor having two layer structure and method for manufacturing the same |
| CN101713688A (en) * | 2009-12-11 | 2010-05-26 | 中国电子科技集团公司第十三研究所 | MEMS non-refrigerated two-band infrared detector and preparation method thereof |
| US20110248374A1 (en) * | 2010-04-12 | 2011-10-13 | Tayfun Akin | Uncooled infrared detector and methods for manufacturing the same |
| CN102692276A (en) * | 2011-03-21 | 2012-09-26 | 浙江大立科技股份有限公司 | Non-refrigeration infrared detector |
| CN103715307A (en) * | 2013-12-31 | 2014-04-09 | 烟台睿创微纳技术有限公司 | Non-refrigeration infrared detector and preparation method thereof |
| CN103776546A (en) * | 2014-01-21 | 2014-05-07 | 武汉高芯科技有限公司 | Non-refrigeration infrared focal plane array detector of double-layer structure |
| CN203721728U (en) * | 2014-01-29 | 2014-07-16 | 上海集成电路研发中心有限公司 | Finished pixel unit structure and semi-finished pixel unit structure |
| CN103940518A (en) * | 2014-04-23 | 2014-07-23 | 电子科技大学 | Microbridge structure of terahertz detection unit with low thermal conductance and preparation method thereof |
-
2015
- 2015-12-31 CN CN201511031614.7A patent/CN106932105A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005034248A1 (en) * | 2003-10-09 | 2005-04-14 | Ocas Corp. | Bolometric infrared sensor having two layer structure and method for manufacturing the same |
| CN101713688A (en) * | 2009-12-11 | 2010-05-26 | 中国电子科技集团公司第十三研究所 | MEMS non-refrigerated two-band infrared detector and preparation method thereof |
| US20110248374A1 (en) * | 2010-04-12 | 2011-10-13 | Tayfun Akin | Uncooled infrared detector and methods for manufacturing the same |
| CN102692276A (en) * | 2011-03-21 | 2012-09-26 | 浙江大立科技股份有限公司 | Non-refrigeration infrared detector |
| CN103715307A (en) * | 2013-12-31 | 2014-04-09 | 烟台睿创微纳技术有限公司 | Non-refrigeration infrared detector and preparation method thereof |
| CN103776546A (en) * | 2014-01-21 | 2014-05-07 | 武汉高芯科技有限公司 | Non-refrigeration infrared focal plane array detector of double-layer structure |
| CN203721728U (en) * | 2014-01-29 | 2014-07-16 | 上海集成电路研发中心有限公司 | Finished pixel unit structure and semi-finished pixel unit structure |
| CN103940518A (en) * | 2014-04-23 | 2014-07-23 | 电子科技大学 | Microbridge structure of terahertz detection unit with low thermal conductance and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113720480A (en) * | 2021-03-26 | 2021-11-30 | 北京北方高业科技有限公司 | Infrared detector mirror image element based on CMOS (complementary metal oxide semiconductor) process and infrared detector |
| CN113594193A (en) * | 2021-09-30 | 2021-11-02 | 西安中科立德红外科技有限公司 | Hybrid imaging detector chip based on semiconductor integrated circuit and preparation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11254564B2 (en) | Semiconductor manufacturing method and structure thereof | |
| CN104237313B (en) | For the nanochannel method and structure of biological detection | |
| TWI476969B (en) | Metal silicide thermal sensor and its preparation method | |
| WO2017205658A1 (en) | Atomic layer etching on microdevices and nanodevices | |
| EP2762866B1 (en) | CMOS gas sensor and method for manufacturing the same | |
| US10236398B2 (en) | Method for manufacturing transparent electrode | |
| US10900841B2 (en) | Radiation detector and method for manufacturing a radiation detector | |
| JP2006024937A (en) | Semiconductor heater and its manufacturing method | |
| CN104659020A (en) | Electronic device incorporating a randomized interconnection layer | |
| US8741774B2 (en) | Method for producing an electrical feedthrough in a substrate, and a substrate having an electrical feedthrough | |
| JPWO2014156071A1 (en) | Semiconductor device and manufacturing method of semiconductor device | |
| CN106932105A (en) | A kind of Infrared Detectors and preparation method thereof | |
| WO2014007603A2 (en) | A method of fabricating a gas sensor | |
| CN108917942A (en) | A kind of non-refrigerated infrared detector and preparation method thereof | |
| CN106935676A (en) | A kind of Infrared Detectors and preparation method thereof | |
| JP5609919B2 (en) | Micro heater element | |
| CN111854976A (en) | Infrared thermopile sensor and manufacturing method thereof | |
| CN106935677A (en) | A kind of Infrared Detectors and preparation method thereof | |
| WO2017044267A1 (en) | Gas sensor platform and the method of making the same | |
| JP5672742B2 (en) | Infrared temperature sensor | |
| KR20140053246A (en) | Coated capacitive sensor | |
| WO2015107597A1 (en) | Infrared sensor and method for manufacturing same | |
| JP5803435B2 (en) | Infrared temperature sensor | |
| CN113932927B (en) | CMOS (complementary Metal oxide semiconductor) process-based infrared detector and preparation method thereof | |
| CN105731368B (en) | The forming method of semiconductor structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170707 |
|
| RJ01 | Rejection of invention patent application after publication |