CN106920864A - A kind of screen type surface wool manufacturing processing method of polysilicon chip - Google Patents
A kind of screen type surface wool manufacturing processing method of polysilicon chip Download PDFInfo
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- CN106920864A CN106920864A CN201710201574.9A CN201710201574A CN106920864A CN 106920864 A CN106920864 A CN 106920864A CN 201710201574 A CN201710201574 A CN 201710201574A CN 106920864 A CN106920864 A CN 106920864A
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- emulsion
- polysilicon chip
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- wool
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 76
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 73
- 210000002268 wool Anatomy 0.000 title claims abstract description 50
- 238000003672 processing method Methods 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000839 emulsion Substances 0.000 claims abstract description 103
- 239000002245 particle Substances 0.000 claims abstract description 43
- 235000008216 herbs Nutrition 0.000 claims abstract description 31
- 239000002253 acid Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000012530 fluid Substances 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 239000002270 dispersing agent Substances 0.000 claims description 9
- 239000000178 monomer Substances 0.000 claims description 7
- 239000004094 surface-active agent Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 210000000481 breast Anatomy 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 claims description 2
- 239000003999 initiator Substances 0.000 claims description 2
- 239000002960 lipid emulsion Substances 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000003786 synthesis reaction Methods 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 abstract description 12
- 239000010432 diamond Substances 0.000 abstract description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 5
- 238000005530 etching Methods 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 239000013078 crystal Substances 0.000 description 11
- 238000005520 cutting process Methods 0.000 description 11
- 238000001035 drying Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 239000004570 mortar (masonry) Substances 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 4
- 239000012188 paraffin wax Substances 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 229920001909 styrene-acrylic polymer Polymers 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 239000004816 latex Substances 0.000 description 3
- 229920000126 latex Polymers 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 238000007596 consolidation process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000004945 emulsification Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000002262 irrigation Effects 0.000 description 2
- 238000003973 irrigation Methods 0.000 description 2
- 229940057995 liquid paraffin Drugs 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 235000013871 bee wax Nutrition 0.000 description 1
- 239000012166 beeswax Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 230000001804 emulsifying effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002480 mineral oil Substances 0.000 description 1
- 235000010446 mineral oil Nutrition 0.000 description 1
- 239000012184 mineral wax Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 235000019198 oils Nutrition 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000012165 plant wax Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- ODGAOXROABLFNM-UHFFFAOYSA-N polynoxylin Chemical compound O=C.NC(N)=O ODGAOXROABLFNM-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 235000015112 vegetable and seed oil Nutrition 0.000 description 1
- 239000008158 vegetable oil Substances 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention belongs to polycrystalline silicon used for solar battery piece technical field of surface, and in particular to a kind of screen type surface wool manufacturing processing method of polysilicon chip of diamond wire saw.The method is comprised the following steps：1) one layer of emulsion is uniformly coated on the surface of polysilicon chip；2) emulsion particle is made to be fixedly arranged at the surface of polysilicon chip after dried process；3) surface is consolidated with into the polysilicon chip of emulsion particle being placed in acid making herbs into wool treatment fluid carries out making herbs into wool treatment；4) after the completion of making herbs into wool, cleaning removes the emulsion particle on polysilicon chip surface.The polysilicon chip matte obtained using the present invention is the light absorbs face being made up of numerous conic tower types, and the surface of this conic tower type structure is close with the surface of the pyramid structure of monocrystalline silicon piece, the absorptivity of polysilicon chip is further enhanced.
Description
Technical field
The invention belongs to polycrystalline silicon used for solar battery piece technical field of surface, and in particular to a kind of diamond wire is cut
The screen type surface wool manufacturing processing method of the polysilicon chip for cutting.
Background technology
With developing rapidly for photovoltaic industry, the demand for making the crystal silicon chip of solar cell is also increasing year by year.
At present, the cutting processing of crystal silicon chip mainly uses two kinds of techniques of mortar line cutting technology or diamond wire saw technology.
Mortar line cutting technology be driven by the steel wire of high-speed motion the silicon-carbide particle in mortar roll grinding so as to
Sliced crystal silicon chip, the defect that this cutting mode generally existing cutting speed is slow, efficiency in blocks is low is on this basis, new
Diamond wire saw technology just arise at the historic moment.Diamond wire saw technology is that tiny diamond particles are passed through into gluing, electricity
The technique such as plating or soldering is fixed on steel wire, the diamond in the high speed motions of steel wire by being attached on steel wire
Grain carries out grinding cutting to crystal silicon chip.Compared to mortar wire cutting, the cutting speed of diamond wire saw technology can be improved
More than twice, and the crystal silicon chip for cutting is thin, efficiency high in blocks, therefore is more suitable for large-scale batch production.
What diamond wire saw technology was utilized is the reciprocating motion of diamond wire, the usual surface of crystal silicon chip for processing
Light, roughness is relatively low, and that thus brings is the reflectivity rising on crystal silicon chip surface, and then influences battery efficiency.In order to carry
The roughness on crystal silicon chip surface high, existing processing method is the acid with deep-etching ability using different component and concentration
Property solution, alkaline solution or sour gas perform etching making herbs into wool to crystal silicon chip surface (such as disclosed in 16 days March in 2016
Disclosed in 11, CN105405930A and 2016 on Mays disclosed in CN105405755A, 16 days March in 2016
CN105576080A)。
Due to the anisotropy of monocrystalline silicon piece, making herbs into wool is etched using alkaline solution for monocrystalline silicon piece, be obtained in that very
The surface of good pyramid structure, significantly reduces reflection, increases the absorption of light.
Polysilicon chip can only etch making herbs into wool because of the particularity of its immanent structure using acid solution, and using acid molten
The optical absorption of the polysilicon chip of the diamond wire saw of liquid etching making herbs into wool is far from using acid solution etching making herbs into wool
The effect of the polysilicon chip of mortar wire cutting is good.It is acid when directly making herbs into wool is performed etching to polysilicon chip using acid solution
Solution will uniformly be etched on polysilicon chip surface with close etching speed.At the same time, due on polysilicon chip surface
Defective locations, etching speed will be greater than other positions.In addition, the transient difference of solution concentration also results in the quarter of different loci
Erosion speed is slightly different.Therefore, polysilicon chip surface can only obtain the structure of pitfall shape as shown in Figure 1.It is additionally, since sudden and violent
Show up long-pending difference, the etching speed at the top of pitfall will be greater than the etching speed of pitfall bottom, many with the extension of etch period
The surface of crystal silicon chip will integrally tend to uniform.Although some recent schemes can make the surface roughness of polysilicon chip certain
Increased in degree, but it is still not ideal enough for the reducing effect of reflectivity.
The content of the invention
In order to solve the technical problem of existing polysilicon chip surface treatment making herbs into wool effect difference, the present invention provides a kind of polycrystalline
The screen type surface wool manufacturing processing method of silicon chip, improves the light absorpting ability on polysilicon chip surface.
Technical solution of the invention is：A kind of screen type surface wool manufacturing processing method of polysilicon chip, its it is special it
Place is to comprise the following steps：
1) one layer of emulsion is uniformly coated on the surface of polysilicon chip；
2) emulsion particle is made to be fixedly arranged at the surface of polysilicon chip after dried process；
3) surface is consolidated with into the polysilicon chip of emulsion particle being placed in acid making herbs into wool treatment fluid carries out making herbs into wool treatment；
4) after the completion of making herbs into wool, cleaning removes the emulsion particle on polysilicon chip surface.
Further, step 1) in the preparation method of emulsion be：By monomer or organism, initiator, surfactant
(emulsifying agent) is added in dispersant, and stirring and emulsifying, obtains finely dispersed emulsion.
Further, the emulsion particle average grain diameter of above-mentioned emulsion is less than 10 microns.
Further, the emulsion particle average grain diameter of above-mentioned emulsion is less than 1 micron.
Further, the emulsion particle average grain diameter of above-mentioned emulsion is less than 0.5 micron.
Further, the mass concentration of above-mentioned emulsion is 5-40%.
It is preferred that above-mentioned emulsion is to be disperseed in dispersant to be formed by a kind of monomer or organism, or by various lists
Body and organism are polymerized what is formed in dispersant.
It is preferred that above-mentioned emulsion is acrylic emulsions, such as pure-acrylic emulsion, styrene-acrylic emulsion, silicone acrylic emulsion or vinegar third
Emulsion.
It is preferred that above-mentioned emulsion is natural stone wax class emulsion, such as mineral wax emulsion, plant wax emulsion or beeswax are newborn
Liquid.
It is preferred that above-mentioned emulsion is natural oil lipid emulsion, it is made for example with by the various animal tallows after refining
Emulsion, vegetable oil emulsion or mineral oil emulsion.
It is preferred that above-mentioned emulsion is synthesis of organic substance class emulsion, such as water-soluble alcohol acid emulsion, ureaformaldehyde emulsion or water-soluble
Property epoxy emulsion.
It is preferred that above-mentioned emulsion is mixed to form by various emulsions.
It is preferred that step 1) in emulsion be using spraying, brush or showering by the way of be coated in the surface of silicon chip.
It is preferred that step 4) in the sweep-out method of emulsion particle be to put the polysilicon chip that surface is consolidated with emulsion particle
Enter and soak in water or the water with surfactant and clean.
The beneficial effects of the present invention are：The present invention coats emulsion in advance on the polysilicon chip surface of diamond wire saw,
Along with the evaporation of dispersant in drying process, emulsion particle can gradually be fixedly arranged at many emulsion under the protection of surfactant
The surface of crystal silicon chip, will split off the jag breach for producing irrigation canals and ditches shape between the emulsion particle of consolidation.Afterwards again to polysilicon
Piece carries out making herbs into wool treatment, and the polysilicon chip at jag breach forms etching site in the environment of being exposed to acid making herbs into wool treatment, rotten
Erosion speed is fast, and the other parts of polysilicon chip then making herbs into wool speed is slower under the masking protection of emulsion particle.Therefore in polycrystalline
Silicon chip surface just greatly improves making herbs into wool effect due to the difference of making herbs into wool speed, improves polysilicon chip surface roughness, reduces
Polysilicon chip surface reflectivity.The matte obtained with the method is the light absorbs face being made up of numerous conic tower types, this cone
The surface of pyramidal structure is close with the surface of the pyramid structure of monocrystalline silicon piece, is entered the absorptivity of polysilicon chip
One step is improved.It is relatively easy, stable, reliable using the technique of the method, and the particle of emulsion is easy to control, system when making
The size of the emulsion particle for obtaining is more or less the same, therefore can produce quality polysilicon chip matte higher.
Brief description of the drawings
Fig. 1 is the suede structure of the pitfall shape that acid solution direct etching polysilicon chip surface obtains.
Fig. 2 is distribution schematic diagram of the emulsion particle on polysilicon chip surface.
Fig. 3 is view (micro- enlarged drawing) in the polysilicon chip surface etch for be consolidated with emulsion particle.
Fig. 4 is view before the polysilicon chip surface etch for being consolidated with emulsion particle.
Fig. 5 is in being consolidated with the polysilicon chip surface etch of emulsion particle, rear view.
Fig. 6 is the suede structure of the conic tower type that screen type surface wool manufacturing processing method is obtained.
Wherein, reference is：1- polysilicon chips；2- emulsion particles；3- etches site.
Specific embodiment
The invention provides a kind of screen type surface wool manufacturing processing method of polysilicon chip, the operation of its preferred embodiment is walked
It is rapid as follows：
First, pending polysilicon chip surface uniformly coating one layer of emulsion, painting method can be spray, brush or
Person's showering.The latex particle size of emulsion here should be less than 10 microns, and more preferably, latex particle size is controlled at 1 micron
Hereinafter, especially below 0.5 micron, latex particle size is got over hour, and coating of the emulsion particle on polysilicon chip surface disperses effect
Fruit is better, and the etching site for being formed after the drying is also more.The mass concentration of emulsion can be controlled between 5% to 40%, dense
Degree is too high or too low all unfavorable to screening effect.The species of emulsion can select organic emulsion or inorganic emulsion.Specifically,
Emulsion can be disperseed in dispersant to form (such as paraffin wax emulsions) by a kind of monomer or organism, or can be by various of monomer
Be polymerized formation (such as styrene-acrylic emulsion) with organism in dispersant.Can also be in addition to be mixed to form (for example by various emulsions
The mixture of pure-acrylic emulsion and styrene-acrylic emulsion).Mixing coating is carried out using the emulsion of variety classes different-grain diameter, breast can be improved
Poor dispersion of the liquid particle on polysilicon chip surface is different in nature, and then improves making herbs into wool etching effect.
After the completion of lotion applicator, treatment is dried to polysilicon chip so that emulsion particle is fixedly arranged at the table of polysilicon chip
Face.Here dried process can be natural drying at room temperature, it is also possible to silicon chip is placed in drying box and is heated
Dry.Along with the evaporation of dispersant in drying process, emulsion particle can gradually be consolidated emulsion under the protection of surfactant
Knot will gradually divide the cracking mouthful that jag produces irrigation canals and ditches shape, such as Fig. 2 between the surface of polysilicon chip, the emulsion particle of consolidation
It is shown, dried emulsion particle 2 polysilicon chip 1 surface random distribution, cracking between each emulsion particle mouthful exposure
Turn into the etching site 3 during next step making herbs into wool outside.Be can see from the micro- enlarged drawing of Fig. 3, at the cracking mouth of part
The position that is as performing etching of bright areas.
Carried out at making herbs into wool next, surface being consolidated with into the polysilicon chip of emulsion particle and being placed in acid making herbs into wool treatment fluid
Reason, specific making herbs into wool processing method can select conventional process for etching of the prior art.As shown in Figure 4 and Figure 5, polysilicon chip
1 proceeds by etching in the direction of the arrow at etching site 3, and gradually gos deep into emulsion particle lower section.With constantly entering for etching
OK, the suede structure of conic tower type as shown in Figure 6 is ultimately formed.Different from the pitfall shape suede structure shown in Fig. 1, this cone
The surface of pyramidal structure is close with the surface of the pyramid structure of monocrystalline silicon piece, there is preferable optical absorption.Again finally
Cleaning removes emulsion particle and can complete surface treatment, obtains the polysilicon chip that surface roughness is high, reflectivity is low.
Technical scheme is elaborated with reference to specific embodiment.
Embodiment one
Solid paraffin is heated to 75-80 DEG C and obtains liquid paraffin, then the hot water by liquid paraffin and temperature higher than 80 DEG C
According to 1:2 mass ratio is mixed, and is then placed into high-speed shearing emulsion machine, according to dosage adds surfactant (emulsification
Agent) after emulsified.Paraffin wax emulsions are obtained after the completion of emulsification.75 DEG C are maintained at uniformly to brush in polysilicon chip paraffin wax emulsions
Surface, is then placed within drying box, dried process 5 minutes at a temperature of 45-60 DEG C.After the completion of drying, by polysilicon chip
Being placed in the acid making herbs into wool treatment fluid prepared complete in advance carries out making herbs into wool etching processing.Finally, polysilicon chip is immersed in temperature
In hot water higher than 90 DEG C, and after being scrubbed, the surface wool manufacturing treatment to polysilicon chip is completed.
Embodiment two
The mass concentration that will be prepared is that 40% styrene-acrylic emulsion is sprayed into silicon chip surface, is then dried at room temperature for treatment
10 minutes.Again insert polysilicon chip after the completion of drying is carried out at making herbs into wool etching in the acid making herbs into wool treatment fluid prepared complete in advance
Reason.Finally, silicon chip is immersed in temperature higher than in 90 DEG C of hot water, and after being cleaned by ultrasonic, completes the table to polysilicon chip
Face making herbs into wool treatment.
Claims (10)
1. the screen type surface wool manufacturing processing method of a kind of polysilicon chip, it is characterised in that comprise the following steps：
1) one layer of emulsion is uniformly coated on the surface of polysilicon chip；
2) emulsion particle is made to be fixedly arranged at the surface of polysilicon chip after dried process；
3) surface is consolidated with into the polysilicon chip of emulsion particle being placed in acid making herbs into wool treatment fluid carries out making herbs into wool treatment；
4) after the completion of making herbs into wool, cleaning removes the emulsion particle on polysilicon chip surface.
2. the screen type surface wool manufacturing processing method of polysilicon chip according to claim 1, it is characterised in that step 1) in
The preparation method of emulsion be：By monomer or organism and initiator and surfactant added in dispersant, stirring breast
Change obtains finely dispersed emulsion.
3. the screen type surface wool manufacturing processing method of polysilicon chip according to claim 2, it is characterised in that：The emulsion
Emulsion particle average grain diameter be less than 10 microns.
4. the screen type surface wool manufacturing processing method of polysilicon chip according to claim 3, it is characterised in that：The emulsion
Emulsion particle average grain diameter be less than 0.5 micron.
5. the screen type surface wool manufacturing processing method of polysilicon chip according to claim 4, it is characterised in that：The emulsion
Mass concentration be 5-40%.
6. according to the screen type surface wool manufacturing processing method of any described polysilicon chip in claim 1-5, it is characterised in that：
The emulsion is to be disperseed in dispersant to be formed by a kind of monomer or organism, or by various of monomer and organism in dispersion
It is polymerized what is formed in agent.
7. the screen type surface wool manufacturing processing method of polysilicon chip according to claim 6, it is characterised in that：The emulsion
It is acrylic emulsions.
8. the screen type surface wool manufacturing processing method of polysilicon chip according to claim 6, it is characterised in that：The emulsion
It is natural stone wax class emulsion, natural oil lipid emulsion or synthesis of organic substance class emulsion.
9. according to the screen type surface wool manufacturing processing method of any described polysilicon chip in claim 1-5, it is characterised in that：
The emulsion is mixed to form by various emulsions.
10., according to the screen type surface wool manufacturing processing method of any described polysilicon chip in claim 1-5, its feature exists
In：Step 1) in emulsion be using spraying, brush or showering by the way of be coated in the surface of polysilicon chip；Step 4) in
The sweep-out method of emulsion particle is that the polysilicon chip that surface is consolidated with emulsion particle is put into water or with surfactant
Water in soak and clean.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019042088A1 (en) * | 2017-09-04 | 2019-03-07 | 苏州易益新能源科技有限公司 | Method for preparing textured surface on surface of crystalline silicon |
| CN116246947A (en) * | 2023-05-11 | 2023-06-09 | 粤芯半导体技术股份有限公司 | Wafer surface roughening method and preparation method of semiconductor device |
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| CN101613884A (en) * | 2009-04-02 | 2009-12-30 | 常州天合光能有限公司 | Polycrystalline silicon fuzzing process by acid method |
| CN101805929A (en) * | 2010-04-02 | 2010-08-18 | 日强光伏科技有限公司 | Polycrystalline silicon surface wool manufacturing method |
| CN102157628A (en) * | 2011-03-22 | 2011-08-17 | 马鞍山优异光伏有限公司 | Method for manufacturing silicon wafer texture |
| CN102412338A (en) * | 2011-08-23 | 2012-04-11 | 江西瑞晶太阳能科技有限公司 | Polycrystalline silicon optical mask flocking process |
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2017
- 2017-03-30 CN CN201710201574.9A patent/CN106920864A/en active Pending
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|---|---|---|---|---|
| US20030102286A1 (en) * | 2000-03-24 | 2003-06-05 | Koji Takahara | Surface treatment process |
| CN101613884A (en) * | 2009-04-02 | 2009-12-30 | 常州天合光能有限公司 | Polycrystalline silicon fuzzing process by acid method |
| CN101805929A (en) * | 2010-04-02 | 2010-08-18 | 日强光伏科技有限公司 | Polycrystalline silicon surface wool manufacturing method |
| CN102157628A (en) * | 2011-03-22 | 2011-08-17 | 马鞍山优异光伏有限公司 | Method for manufacturing silicon wafer texture |
| CN102412338A (en) * | 2011-08-23 | 2012-04-11 | 江西瑞晶太阳能科技有限公司 | Polycrystalline silicon optical mask flocking process |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2019042088A1 (en) * | 2017-09-04 | 2019-03-07 | 苏州易益新能源科技有限公司 | Method for preparing textured surface on surface of crystalline silicon |
| CN116246947A (en) * | 2023-05-11 | 2023-06-09 | 粤芯半导体技术股份有限公司 | Wafer surface roughening method and preparation method of semiconductor device |
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