CN106919010A - One kind peels off photoetching adhesive dispenser for semiconductor wafer - Google Patents
One kind peels off photoetching adhesive dispenser for semiconductor wafer Download PDFInfo
- Publication number
- CN106919010A CN106919010A CN201510985459.6A CN201510985459A CN106919010A CN 106919010 A CN106919010 A CN 106919010A CN 201510985459 A CN201510985459 A CN 201510985459A CN 106919010 A CN106919010 A CN 106919010A
- Authority
- CN
- China
- Prior art keywords
- processing chamber
- chip
- transfer gate
- vacuum
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses one kind photoetching adhesive dispenser is peelled off for semiconductor wafer, heater is set above processing chamber, processing chamber is connected with vacuum sample cavity, while ensuring that transmission cavity can be mutually communicated with processing chamber, vacuum sample cavity and etch chamber respectively, the transmission of chip is realized.Peelling off photoetching adhesive dispenser provided by the present invention for semiconductor wafer can avoid wasting the time of chip transfer, improve the output of chip.In the present invention, when carrying out chip and going photoresist to process, heater is set above processing chamber, because wafer surface accumulates smaller, wafer surface is directly heated using lamp heater can effectively realize photoresist and process, while energy saving.
Description
Technical field
The present invention relates to semiconductor etching process field, and in particular to one kind peels off photoetching adhesive dispenser for semiconductor wafer.
Background technology
In semiconductor etching process field, in many cases, need to perform etching chip post processing after etching technics, namely go photoresist to process.In system equipment of the prior art, only with etching function, after etched semiconductor wafer needs to be moved out of said system equipment, being put into be additionally useful for peelling off photoetching colloid system carries out photoresist and processes.The process equipment and method of prior art, due to needing to complete to go photoresist to process after the chip after etching is shifted, waste the substantial amounts of time, the strong influence output of chip.Removing photoresist process simultaneously needs in hot environment（More than 200 degree）Under carry out, otherwise reaction speed does not reach economic requirement, so going in photoresist reaction chamber in the board for install chip also to also need to set a heater, the wafer of plasma etching industrial is just completed to heat.But conventional heater is heated due to transmitting heat from bottom to top to chip, so needing to cause that wafer surface temperature reaches requirement every a period of time, and substantial amounts of heat in transmittance process not up to chip, but downwards or to surrounding is by transmission or has been radiated the other parts of photoresist reaction chamber, so traditional resistance heater service efficiency is low and the reaction time is slow in photoresist reaction chamber.
The content of the invention
It is an object of the invention to provide one kind photoetching adhesive dispenser is peelled off for semiconductor wafer, heater is set above processing chamber, processing chamber is connected with vacuum sample cavity, while ensuring that transmission cavity can be mutually communicated with processing chamber, vacuum sample cavity and etch chamber respectively, the transmission of chip is realized.Peelling off photoetching adhesive dispenser provided by the present invention for semiconductor wafer can avoid wasting the time of chip transfer, improve the output of chip.In the present invention, when carrying out chip and going photoresist to process, heater is set above processing chamber, because wafer surface accumulates smaller, wafer surface is directly heated using lamp heater can effectively realize photoresist and process, while energy saving.
In order to achieve the above object, the present invention is achieved through the following technical solutions：
One kind peels off photoetching adhesive dispenser for semiconductor wafer, comprising support frame；It is characterized in, the device is included：
At least one processing chamber, is arranged on support frame as described above；
At least one vacuum sample cavity, is connected with least one processing chamber；
At least one heater, is arranged on the top of correspondence at least one processing chamber, and at least one heater is pharoid；
At least one etch chamber, is arranged on support frame as described above；
Transmission cavity, is arranged on support frame as described above, and causes that chip is transmitted between at least one processing chamber, at least one vacuum sample cavity and at least one etch chamber.
Operating power >=the 10Kw of at least one heater so that the wafer surface reaches 200 DEG C -270 DEG C of temperature to the chip in 10s under the irradiation of lamp heater.
The vacuum sample cavity is interconnected with the processing chamber.
The vacuum sample cavity is provided with the first vacuum transfer gate near the side of the transmission cavity；The opposite side of the vacuum sample cavity is provided with chip feeding door；Mounting table is provided with the vacuum sample cavity, for placing chip.
Included in the processing chamber：
Reaction window and baffle assembly, are arranged on the processing chamber top；The heater is heated through the reaction window and baffle assembly to the chip being put into the processing chamber；
Ion shower, is arranged on outside the processing chamber, to the processing chamber internal spray plasma reaction gas；
Base station, is arranged in the processing chamber；Chip is arranged on the base station；
Second vacuum transfer gate, is arranged on the processing chamber and is close on the side wall of the transmission cavity；The transmission cavity is sent on the base station of the processing chamber chip by the second vacuum transfer gate.
At least one etch chamber is provided with the 3rd vacuum transfer gate；The transmission cavity carries out chip transmission by the first vacuum transfer gate with the vacuum sample cavity, the transmission cavity carries out chip transmission by the second vacuum transfer gate and the processing chamber, and the transmission cavity carries out chip transmission by the 3rd vacuum transfer gate and at least one etch chamber.
The vacuum sample cavity is separately positioned between processing chamber described in a pair.
The vacuum sample cavity is provided with the first vacuum transfer gate near the side of the transmission cavity；The opposite side of the vacuum sample cavity is provided with chip feeding door；A pair of mounting tables are provided with the vacuum sample cavity, the pair of mounting table is stacked setting up and down, each described mounting table is used to place chip.
Included in each described processing chamber：
Reaction window and baffle assembly, are arranged on the processing chamber top；The heater is heated through the reaction window and baffle assembly to the chip being put into the processing chamber；
Ion shower, is arranged on outside the processing chamber, to the processing chamber internal spray plasma reaction gas；
Base station, is arranged in the processing chamber；Chip is arranged on the base station；
Second vacuum transfer gate, is arranged on the processing chamber and is close on the side wall of the transmission cavity；The transmission cavity is sent on the base station of the processing chamber chip by the second vacuum transfer gate.
At least one etch chamber is provided with the 3rd vacuum transfer gate；The transmission cavity carries out chip transmission by the first vacuum transfer gate with the vacuum sample cavity, the transmission cavity carries out chip transmission by the second vacuum transfer gate and the processing chamber, and the transmission cavity carries out chip transmission by the 3rd vacuum transfer gate and at least one etch chamber.
The present invention has advantages below compared with prior art：
One kind disclosed by the invention peels off photoetching adhesive dispenser for semiconductor wafer, heater is set above processing chamber, processing chamber is connected with vacuum sample cavity, while ensuring that transmission cavity can be mutually communicated with processing chamber, vacuum sample cavity and etch chamber respectively, the transmission of chip is realized.Peelling off photoetching adhesive dispenser provided by the present invention for semiconductor wafer can avoid wasting the time of chip transfer, improve the output of chip.In the present invention, when carrying out chip and going photoresist to process, heater is set above processing chamber, because wafer surface accumulates smaller, wafer surface is directly heated using lamp heater can effectively realize photoresist and process, while energy saving.Meanwhile, in the present invention, mounting table symmetrical above and below can be set in vacuum sample cavity, two wafers can be processed simultaneously, improve the operating efficiency of the device.
Brief description of the drawings
Fig. 1 is that the present invention is a kind of peels off one of overall structure diagram of photoetching adhesive dispenser for semiconductor wafer.
Fig. 2 is the two of a kind of overall structure diagram that photoetching adhesive dispenser is peelled off for semiconductor wafer of the present invention.
Fig. 3 is that the present invention is a kind of peels off one of overall structure diagram of photoetching adhesive dispenser for semiconductor wafer.
Fig. 4 is the two of a kind of embodiment schematic diagram that photoetching adhesive dispenser is peelled off for semiconductor wafer of the present invention.
Fig. 5 is the three of a kind of embodiment schematic diagram that photoetching adhesive dispenser is peelled off for semiconductor wafer of the present invention.
Fig. 6 is a kind of whole implementation schematic flow sheet that photoetching adhesive dispenser is peelled off for semiconductor wafer of the present invention.
Fig. 7 is a kind of embodiment vertical cut-away schematic view that photoetching adhesive dispenser is peelled off for semiconductor wafer of the present invention.
Specific embodiment
Below in conjunction with accompanying drawing, by describing a preferably specific embodiment in detail, the present invention is further elaborated.
One kind peels off photoetching adhesive dispenser for semiconductor wafer, and the device is included：Include at least one mechanical arm for being used to transmit wafer in support frame, at least one processing chamber 1, at least one vacuum sample cavity 2, at least one heater 3, at least one etch chamber 4 and transmission cavity 5, transmission cavity 5.
Wherein, at least one processing chamber 1 is arranged on support frame；At least one vacuum sample cavity 2 is connected with least one processing chamber 1；At least one heater 3 is arranged on the top of at least one processing chamber 1 of correspondence；At least one etch chamber 4 is arranged on support frame；Transmission cavity 5 is arranged on support frame, and is communicated with least one processing chamber 1, at least one vacuum sample cavity 2 and at least one etch chamber 4 respectively.
In the present invention, at least one heater 3 is pharoid, typical such as lamp heater 3, pharoid of the invention includes one or more lamp groups or the reflection focusing arrangement matched with lamp group, most of visible ray or infrared heat is aimed downwardly on pending chip.Operating power >=the 10Kw of at least one heater 3.Required in the present embodiment, irradiation of the lamp heater 3 to chip requires to cause the temperature that the wafer surface reaches 200 DEG C -270 DEG C in 10s.
Embodiment one
As Figure 1 and Figure 4, one kind is included in peelling off photoetching adhesive dispenser for semiconductor wafer：One processing chamber 1, vacuum sample cavity 2, heater 3, etch chamber 4 and transmission cavity 5.
Wherein, processing chamber 1 is arranged on support frame, and vacuum sample cavity 2 is connected with processing chamber 1, heater 3 is arranged on the top of processing chamber 1, etch chamber 4 is arranged on support frame, and transmission cavity 5 is arranged on support frame, and is communicated with processing chamber 1, vacuum sample cavity 2 and etch chamber 4 respectively.Vacuum sample cavity 2 is interconnected with processing chamber 1.Wherein, etch chamber 4 is provided with the 3rd vacuum transfer gate 41.Processing chamber 1 is connected to transmission cavity except may be located at the side of vacuum sample cavity 2 in the present invention, it can also be the structure shown in the vertical cut-away schematic view for peelling off photoetching adhesive dispenser such as Fig. 7 semiconductor wafers, both processing chamber and vacuum sample cavity are mutually stacked in figure, processing chamber 1 is arranged on vacuum sample cavity top, and the space availability ratio of whole wafer processing system is improved with save space.By vacuum transfer gate 22 ' and the UNICOM of vacuum sample cavity 2, the other end of vacuum sample cavity 2 is stored and Transmission system wherein transmission cavity 5 by transfer gate 21 ' with the substrate in atmosphere outside, and processing chamber 1 is connected by transfer gate 11 ' with transmission cavity 5.Horizontal cavity wall between processing chamber 1 and vacuum sample cavity 2 by sharing is integrated.
Vacuum sample cavity 2 is provided with the first vacuum transfer gate 22 near the side of transmission cavity 5；The opposite side of vacuum sample cavity 2 is provided with chip feeding door 21；Mounting table 23 is provided with the vacuum sample cavity 2, for placing chip.
As shown in figure 3, being included in processing chamber 1：Reaction window and baffle assembly 12, ion shower 13, the vacuum transfer gate 11 of base station 14 and second.
Wherein, reaction window and baffle assembly 12 are arranged on the top of processing chamber 1；Ion shower 13 is arranged on outside processing chamber 1, to the internal spray reactive ion of processing chamber 1；Base station 14 is arranged in processing chamber 1；Second vacuum transfer gate 11 is arranged on processing chamber 1 on the side wall of transmission cavity 5.
In the present embodiment, chip is arranged on base station 14 carries out photoresist treatment of delustering.Heater 3 can be heated through reaction 12 pairs of chips being put into processing chamber 1 of window and baffle assembly.
Transmission cavity 5 carries out chip transmission by the first vacuum transfer gate 22 with vacuum sample cavity 2, transmission cavity 5 carries out chip transmission by the second vacuum transfer gate 11 with processing chamber 1, and will be taken out on the base station 14 of chip feeding processing chamber 1 or from base station 14, transmission cavity 5 carries out chip transmission by the 3rd vacuum transfer gate 41 and at least one etch chamber 4.
As shown in fig. 6, disclosed by the invention, a kind of to peel off photoetching gluing method for semiconductor wafer as follows in the concrete application of the present embodiment：
S1, chip is sent into door 21 and is sent into vacuum sample cavity 2 by the chip of vacuum sample cavity 2, air in the vacuum sample cavity 2 is extracted out, and when keeping vacuum state in the vacuum sample cavity 2, above-mentioned chip is sent into transmission cavity 5 by the first vacuum transfer gate 22.
After processed chip sends into the feeding vacuum of door 21 sample cavity 2 by chip from ambient atmosphere environment, chip feeding door 21 is closed, while air in the vacuum sample cavity 2 is extracted out, and vacuum state in the vacuum sample cavity 2 is kept, the first vacuum transfer gate 22 is opened, transmission cavity 5 is shifted chip.
S2, chip is sent into etch chamber 4 by the 3rd vacuum transfer gate 41 and performed etching under the drive of transmission cavity 5.
S3, will etch the chip for completing and is fed again into transmission cavity 5 by the 3rd vacuum transfer gate 41, under the drive of the transmission cavity 5, be sent into corresponding processing chamber 1 by the second vacuum transfer gate 11, and above-mentioned chip is peelled off into photoresist.In step S3：
S3.1, the lamp heater 3 at the top of processing chamber 1 passes through the reaction window and baffle assembly 12 of the processing chamber 1, and the chip to being placed on base station 14 is irradiated heating.
The chip for completing etching is placed on base station 14 by the transmission cavity 5 of the second vacuum transfer gate 11, because wafer surface accumulates smaller, irradiation of the lamp heater 3 to chip requires to cause the temperature that the wafer surface reaches 200 DEG C -270 DEG C in 10s.
S3.2, ion shower 13 carries out photoresist peeling by plasma to its surface at high temperature to jet plasma in the processing chamber 1, above-mentioned chip.
S4, after above-mentioned chip completes to peel off photoresist in processing chamber 1, again by the feeding transmission cavity 5 of the second vacuum transfer gate 11, under the drive of the transmission cavity 5, vacuum sample cavity 2 is sent into by the first vacuum transfer gate 22.
After chip completion is processed, door 21 is sent into by chip the chip for completing treatment is taken out from said system.
Embodiment two
As shown in Fig. 2, Fig. 5, one kind is peelled off photoetching adhesive dispenser and is included for semiconductor wafer：A pair of processing chambers, 1, vacuum sample cavity 2, a pair of heaters 3, at least one etch chamber 4 and transmission cavities 5.
Wherein, a pair of processing chambers 1 are arranged on support frame, vacuum sample cavity 2 is separately positioned between a pair of processing chambers 1, each heater 3 is arranged on the top in alignment processing chamber 1, and it is overlapped mutually setting with corresponding processing chamber 1, etch chamber 4 is arranged on support frame, and transmission cavity 5 is arranged on support frame, and is communicated with a pair of processing chambers 1, vacuum sample cavity 2 and etch chambers 4 respectively.Wherein, etch chamber 4 is provided with the 3rd vacuum transfer gate 41.
As shown in figure 3, being included in each processing chamber 1：Reaction window and baffle assembly 12, ion shower 13, the vacuum transfer gate 11 of base station 14 and second.
Wherein, reaction window and baffle assembly 12 are arranged on the top of processing chamber 1；Ion shower 13 is arranged on outside processing chamber 1, to the internal spray reactive ion of processing chamber 1；Base station 14 is arranged in processing chamber 1；Second vacuum transfer gate 11 is arranged on processing chamber 1 on the side wall of transmission cavity 5.
In the present embodiment, chip is arranged on base station 14；Transmission cavity 5 is sent on the base station 14 of processing chamber 1 chip by the second vacuum transfer gate 11.Each heater 3 is heated through corresponding reaction 12 pairs of chips being put into processing chamber 1 of window and baffle assembly.
As shown in Fig. 2 vacuum sample cavity 2 is provided with the first vacuum transfer gate 22 near the side of transmission cavity 5；The opposite side of vacuum sample cavity 2 is provided with chip feeding door 21；Etch chamber 4 is provided with the 3rd vacuum transfer gate 41.
As shown in figure 5, being provided with a pair of mounting tables 23 in vacuum sample cavity 2, a pair of mounting tables are stacked setting about 23, and each mounting table 23 is used to place chip.Two mounting tables can be mutually isolated by division board and can also communicated with one another in vacuum sample cavity 2.
Transmission cavity 5 carries out a piece of or a pair of chips and transmits by the 3rd vacuum transfer gate and vacuum sample cavity 2, transmission cavity 5 carries out chip transmission by the 4th vacuum transfer gate and processing chamber 1, and transmission cavity 5 carries out chip transmission by the 3rd vacuum transfer gate 41 and at least one etch chamber 4.
As shown in fig. 6, disclosed by the invention, a kind of to peel off photoetching gluing method for semiconductor wafer as follows in the concrete application of the present embodiment：
S1, chip is sent into door 21 and is sent into vacuum sample cavity 2 by the chip of vacuum sample cavity 2, air in the vacuum sample cavity 2 is extracted out, and when keeping vacuum state in the vacuum sample cavity 2, above-mentioned chip is sent into transmission cavity 5 by the first vacuum transfer gate 22.
In the present embodiment, when a pair of chips send into door 21 by the chip of vacuum sample cavity 2 sends into vacuum sample cavity 2, air in the vacuum sample cavity 2 is extracted out, and is kept in the vacuum sample cavity 2 after vacuum state, shifted a pair of chips simultaneously by the transmission cavity 5 of the first vacuum transfer gate 22.
After a processed chip sends into door 21 from ambient atmosphere environment by chip sends into vacuum sample cavity 2, chip feeding door 21 is closed, air in the vacuum sample cavity 2 is extracted out simultaneously, and keep vacuum state in the vacuum sample cavity 2, the first vacuum transfer gate 22 is opened, transmission cavity 5 is shifted chip.
S2, chip is sent into etch chamber 4 by the 3rd vacuum transfer gate 41 and performed etching under the drive of transmission cavity 5.
In the present embodiment, when transmission cavity 5 drives a pair of chips to be shifted, then a pair of chips are sequentially sent to by the 3rd vacuum transfer gate 41 be performed etching in etch chamber 4.Namely wherein after chip completes etching, then another chip is put into etch chamber 4 performs etching.Or a pair of chips are transferred to different etch chambers 4 respectively perform etching.
S3, will etch the chip for completing and is fed again into transmission cavity 5 by the 3rd vacuum transfer gate 41, under the drive of the transmission cavity 5, be sent into corresponding processing chamber 1 by the second vacuum transfer gate 11, and above-mentioned chip is peelled off into photoresist.In step S3：
S3.1, the lamp heater 3 at the top of processing chamber 1 passes through the reaction window and baffle assembly 12 of the processing chamber 1, and the chip to being placed on base station 14 is irradiated heating.
Transmission cavity 5 will complete a pair of chips of etching by a pair of the second vacuum transfer gates 11 of processing chamber 1, it is placed on corresponding base station 14, because wafer surface accumulates smaller, irradiation of the lamp heater 3 to chip requires to cause the temperature that the wafer surface reaches 200 DEG C -270 DEG C in 10s.
S3.2, ion shower 13 carries out photoresist peeling by plasma to its surface at high temperature to jet plasma in the processing chamber 1, above-mentioned chip.
S4, after above-mentioned chip completes to peel off photoresist in processing chamber 1, again by the feeding transmission cavity 5 of the second vacuum transfer gate 11, under the drive of the transmission cavity 5, vacuum sample cavity 2 is sent into by the first vacuum transfer gate 22.
After a pair or a chip completion treatment, door 21 is sent into by chip the chip for completing treatment is taken out from said system.
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that the description above is not considered as limitation of the present invention.After those skilled in the art have read the above, all be will be apparent for various modifications and substitutions of the invention.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. one kind peels off photoetching adhesive dispenser for semiconductor wafer, comprising support frame；Characterized in that, the device is also included：
At least one processing chamber, is arranged on support frame as described above；
At least one vacuum sample cavity, is connected with least one processing chamber；
At least one heater, is arranged on the top of correspondence at least one processing chamber, and at least one heater is pharoid；
At least one etch chamber, is arranged on support frame as described above；
Transmission cavity, is arranged on support frame as described above, and causes that chip is transmitted between at least one processing chamber, at least one vacuum sample cavity and at least one etch chamber.
2. photoetching adhesive dispenser is peelled off for semiconductor wafer as claimed in claim 1, it is characterized in that, operating power >=the 10Kw of at least one heater so that the wafer surface reaches 200 DEG C -270 DEG C of temperature to the chip in 10s under the irradiation of lamp heater.
3. photoetching adhesive dispenser is peelled off for semiconductor wafer as claimed in claim 1, it is characterised in that the vacuum sample cavity is interconnected with the processing chamber.
4. photoetching adhesive dispenser is peelled off for semiconductor wafer as claimed in claim 3, it is characterised in that the vacuum sample cavity is provided with the first vacuum transfer gate near the side of the transmission cavity；The opposite side of the vacuum sample cavity is provided with chip feeding door；Mounting table is provided with the vacuum sample cavity, for placing chip.
5. photoetching adhesive dispenser is peelled off for semiconductor wafer as claimed in claim 4, it is characterised in that included in the processing chamber：
Reaction window and baffle assembly, are arranged on the processing chamber top；The heater is heated through the reaction window and baffle assembly to the chip being put into the processing chamber；
Ion shower, is arranged on outside the processing chamber, to the processing chamber internal spray plasma reaction gas；
Base station, is arranged in the processing chamber；Chip is arranged on the base station；
Second vacuum transfer gate, is arranged on the processing chamber and is close on the side wall of the transmission cavity；The transmission cavity is sent on the base station of the processing chamber chip by the second vacuum transfer gate.
6. photoetching adhesive dispenser is peelled off for semiconductor wafer as claimed in claim 5, it is characterised in that at least one etch chamber is provided with the 3rd vacuum transfer gate；The transmission cavity carries out chip transmission by the first vacuum transfer gate with the vacuum sample cavity, the transmission cavity carries out chip transmission by the second vacuum transfer gate and the processing chamber, and the transmission cavity carries out chip transmission by the 3rd vacuum transfer gate and at least one etch chamber.
7. photoetching adhesive dispenser is peelled off for semiconductor wafer as claimed in claim 1, it is characterised in that the vacuum sample cavity is separately positioned between processing chamber described in a pair.
8. photoetching adhesive dispenser is peelled off for semiconductor wafer as claimed in claim 7, it is characterised in that the vacuum sample cavity is provided with the first vacuum transfer gate near the side of the transmission cavity；The opposite side of the vacuum sample cavity is provided with chip feeding door；A pair of mounting tables are provided with the vacuum sample cavity, the pair of mounting table is stacked setting up and down, each described mounting table is used to place chip.
9. photoetching adhesive dispenser is peelled off for semiconductor wafer as claimed in claim 8, it is characterised in that included in each described processing chamber：
Reaction window and baffle assembly, are arranged on the processing chamber top；The heater is heated through the reaction window and baffle assembly to the chip being put into the processing chamber；
Ion shower, is arranged on outside the processing chamber, to the processing chamber internal spray plasma reaction gas；
Base station, is arranged in the processing chamber；Chip is arranged on the base station；
Second vacuum transfer gate, is arranged on the processing chamber and is close on the side wall of the transmission cavity；The transmission cavity is sent on the base station of the processing chamber chip by the second vacuum transfer gate.
10. photoetching adhesive dispenser is peelled off for semiconductor wafer as claimed in claim 9, it is characterised in that at least one etch chamber is provided with the 3rd vacuum transfer gate；The transmission cavity carries out chip transmission by the first vacuum transfer gate with the vacuum sample cavity, the transmission cavity carries out chip transmission by the second vacuum transfer gate and the processing chamber, and the transmission cavity carries out chip transmission by the 3rd vacuum transfer gate and at least one etch chamber.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510985459.6A CN106919010A (en) | 2015-12-25 | 2015-12-25 | One kind peels off photoetching adhesive dispenser for semiconductor wafer |
| CN202210580394.7A CN114879456A (en) | 2015-12-25 | 2015-12-25 | Wafer processing system |
| TW105120466A TWI603168B (en) | 2015-12-25 | 2016-06-29 | For semiconductor wafer removal photoresist device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510985459.6A CN106919010A (en) | 2015-12-25 | 2015-12-25 | One kind peels off photoetching adhesive dispenser for semiconductor wafer |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210580394.7A Division CN114879456A (en) | 2015-12-25 | 2015-12-25 | Wafer processing system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106919010A true CN106919010A (en) | 2017-07-04 |
Family
ID=59457584
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510985459.6A Pending CN106919010A (en) | 2015-12-25 | 2015-12-25 | One kind peels off photoetching adhesive dispenser for semiconductor wafer |
| CN202210580394.7A Pending CN114879456A (en) | 2015-12-25 | 2015-12-25 | Wafer processing system |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210580394.7A Pending CN114879456A (en) | 2015-12-25 | 2015-12-25 | Wafer processing system |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN106919010A (en) |
| TW (1) | TWI603168B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493127A (en) * | 2018-03-09 | 2018-09-04 | 宁海利航机电设备设计有限公司 | A kind of semi-finished product integrated chip production equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010068642A (en) * | 2000-01-07 | 2001-07-23 | 윤종용 | Apparatus for removing photoresist film |
| US20060043062A1 (en) * | 2004-08-25 | 2006-03-02 | Campbell Timothy S | Methods of downstream microwave photoresist removal and via clean, particularly following Stop-On TiN etching |
| CN101303537A (en) * | 2007-05-08 | 2008-11-12 | 应用材料股份有限公司 | Process for wafer backside polymer removal and wafer front side photoresist removal |
| CN101473419A (en) * | 2006-06-22 | 2009-07-01 | 东京毅力科创株式会社 | A dry non-plasma treatment system and method of using |
| CN203038898U (en) * | 2012-12-31 | 2013-07-03 | 中微半导体设备(上海)有限公司 | Semiconductor substrate processing system |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4382926B2 (en) * | 1999-09-29 | 2009-12-16 | 東京エレクトロン株式会社 | Plasma processing method |
| TW502301B (en) * | 2001-09-28 | 2002-09-11 | Taiwan Semiconductor Mfg | Chemical agent dispenser system |
| KR20110001273A (en) * | 2009-06-30 | 2011-01-06 | 세메스 주식회사 | Method and apparatus for processing a substrate |
| KR20150141026A (en) * | 2014-06-09 | 2015-12-17 | 삼성전자주식회사 | Systems for removing photoresists and methods of removing photoresists using the same |
-
2015
- 2015-12-25 CN CN201510985459.6A patent/CN106919010A/en active Pending
- 2015-12-25 CN CN202210580394.7A patent/CN114879456A/en active Pending
-
2016
- 2016-06-29 TW TW105120466A patent/TWI603168B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010068642A (en) * | 2000-01-07 | 2001-07-23 | 윤종용 | Apparatus for removing photoresist film |
| US20060043062A1 (en) * | 2004-08-25 | 2006-03-02 | Campbell Timothy S | Methods of downstream microwave photoresist removal and via clean, particularly following Stop-On TiN etching |
| CN101473419A (en) * | 2006-06-22 | 2009-07-01 | 东京毅力科创株式会社 | A dry non-plasma treatment system and method of using |
| CN101303537A (en) * | 2007-05-08 | 2008-11-12 | 应用材料股份有限公司 | Process for wafer backside polymer removal and wafer front side photoresist removal |
| CN203038898U (en) * | 2012-12-31 | 2013-07-03 | 中微半导体设备(上海)有限公司 | Semiconductor substrate processing system |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493127A (en) * | 2018-03-09 | 2018-09-04 | 宁海利航机电设备设计有限公司 | A kind of semi-finished product integrated chip production equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI603168B (en) | 2017-10-21 |
| CN114879456A (en) | 2022-08-09 |
| TW201723681A (en) | 2017-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4089113B2 (en) | Thin film production equipment | |
| CN102057462B (en) | Short thermal profile oven useful for screen printing | |
| WO2005096396A1 (en) | Method for manufacturing solar cell | |
| CN103021907A (en) | Microwave processing apparatus and method for processing object to be processed | |
| CN111354618B (en) | Plasma photoresist removing device | |
| CN103053008B (en) | For the apparatus and method that multiple multilayer bodies are heat-treated | |
| CN103890917A (en) | Thermal management of edge ring in semiconductor processing | |
| CN103199031B (en) | Full-automatic glue film coating, developing apparatus | |
| CN105118801A (en) | Semiconductor chip surface treatment system | |
| CN103137509B (en) | For device and the wafer bonding method of wafer bonding | |
| CN106919010A (en) | One kind peels off photoetching adhesive dispenser for semiconductor wafer | |
| CN102169810B (en) | Laser processing apparatus using vacuum cavity and processing method thereof | |
| CN104746009B (en) | PVD degassing heating chambers | |
| CN102169815B (en) | Vacuum laser processing device with high productivity and processing method | |
| CN109712880A (en) | A kind of method for improving and enhancing system of wafer bonding power | |
| CN210837675U (en) | Semiconductor packaging equipment | |
| KR20200104426A (en) | Bonding tools for bonding machines, bonding machines for bonding semiconductor elements, and related methods | |
| CN109346495A (en) | Wafer bonding method | |
| CN105441876B (en) | A kind of film deposition equipment | |
| CN117238815B (en) | Wafer preheating and cooling device and wafer conveying method | |
| KR101122121B1 (en) | Laminating method for manufacturing solar cell module | |
| JP2010080537A (en) | Substrate treatment apparatus | |
| CN105261576A (en) | Heating chamber and semiconductor processing equipment | |
| CN110660689A (en) | Die bonding method of semiconductor element | |
| CN215615644U (en) | Thing networking baseband data processing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant after: China micro semiconductor equipment (Shanghai) Co.,Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant before: ADVANCED MICRO FABRICATION EQUIPMENT Inc. SHANGHAI |
|
| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170704 |
|
| RJ01 | Rejection of invention patent application after publication |