CN106917065A - A kind of method for changing high-temp solid surface drop wellability - Google Patents
A kind of method for changing high-temp solid surface drop wellability Download PDFInfo
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- CN106917065A CN106917065A CN201710128272.3A CN201710128272A CN106917065A CN 106917065 A CN106917065 A CN 106917065A CN 201710128272 A CN201710128272 A CN 201710128272A CN 106917065 A CN106917065 A CN 106917065A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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Abstract
The present invention provides a kind of method for changing high-temp solid surface drop wellability, such that it is able to realize the regulation and control of high-temp solid surface droplet morphology, effectively increases heat transfer efficiency, heat transfer enhancement technology.The method economy is simple, and environmentally friendly.
Description
Technical field
The present invention relates to a kind of method for changing high-temp solid surface drop wellability, can effectively improve heat transfer efficiency,
Heat transfer enhancement technology, energy saving utilization rate.
Background technology
The process that drop clashes into high-temp solid surface is closely related with numerous industrial process, is present in combustion in IC engine, spray
Drench during cooling, inkjet printing, plasma sputtering etc..Drop is clashed into directly to be determined with the mechanism of action of solid wall surface
State the heat transfer implementation result of process.Therefore the heat transfer efficiency between solid-liquid is strengthened, for energy-conserving and environment-protective in adaptation nowadays economic development
New direction have important positive effect.
It is known that in solid-liquid diabatic process, coolant is generally in high-temp solid surface spreading.Heat transfer efficiency between solid-liquid
Comparatively fast, it may occur that the transformation of liquid phase so as to take away the heat on high-temp solid surface, so as to realize the quick cooling of high-temperature service.
If continuing to increase the temperature to during up to the transition boiling stage, maximum heat flux is just reached between solid and liquid.If temperature is further
Raise, then due to air bubble growth excessive velocities, connection can be mutually merged before the surface of solids is fled from, be restricted heat transfer,
Finally continuous vapor film is formed in the surface of solids.Steam blanket keeps apart liquid with high temperature surface, and drop can be suspended in this
On vapor film.Now, drop does not infiltrate completely with the surface of solids, and the change (the going infiltration of drop) of wet face state occurs, this
Plant phenomenon and be referred to as Leidenfrost effects, now corresponding temperature is referred to as Leidenfrost temperature, is also the leaching of drop
Profit transition temperature.Because the thermal conductivity of steam blanket at this temperature is very poor, the evaporation process of drop will be very slow, and heat transfer efficiency also can
Reduce, the heat for ultimately resulting in the surface of solids can not be taken away in time, and high-temperature service may be burned because of overheat.Therefore,
In actual production, in order to improve the heat transfer efficiency in diabatic process, on the premise of we will avoid film boiling, improve as far as possible
Solid-liquid heat transfer efficiency.
But the essence of boiling heat transfer, it is when boiling point of the surface of solids temperature higher than water, between the surface of solids and water
It is a series of to infiltrate and go infiltration behavior, therefore, the chemical composition and microstructure of the surface of solids, inevitable strong influence it and are consolidated
Liquid heat transfer property.And so far, but not yet manned system comprehensively proposes high-temp solid surface texture and chemical composition to its high temperature
The influence of lower infiltration behavior.
Additionally, behavior of the heat transfer medium to drop high-temp solid surface plays critically important effect.The heat transfer medium of deposition
The wellability of the surface of solids, even roughness, infiltration transition temperature of the influence drop on high-temp solid surface can be changed.
The present invention provides a kind of method for changing high-temp solid surface drop wellability, by the microstructure for coordinating interface
With chemical composition and the physicochemical properties of change work drop, augmentation of heat transfer, drag reduction etc. can be effectively realized, improve the energy
Utilization rate, economizes on resources.
The content of the invention
Problems of the prior art are directed to it is an object of the invention to provide one kind, the present invention is the existing height of solution
The efficient heat transfer requirement of load, the present invention provides a kind of method for changing high-temp solid surface drop wellability, by coordinating
The microstructure and chemical composition of solid interface and the physicochemical properties of change work drop, method are relatively easy, economical
Environmental protection, with good exploitativeness.
The method that the regulation and control high-temp solid surface drop that the present invention is provided infiltrates sex reversal, specifically includes：
The first step, the selection of the drop that works；
Second step, the cleaning of silicon chip；
3rd step, the preparation of surface texture；
4th step, the structure of hydrophobic surface.
Wherein, the first step can select deionized water, the aqueous solution of surfactant sodium dodecyl base sodium sulfonate SDS,
SiO2Nano-fluid and colloid of iron oxide etc. are used as work drop.
Wherein, the second step is further specially smooth silicon chip (p-type, crystal orientation 100) and silicon with micrometer structure
Piece (being obtained using mask plate etching P, the smooth silicon of crystal orientation 100 using mask plate Beijing University micro-nano technology laboratory) is soaked successively respectively
Enter ultrasound 15min in acetone, ethanol, after being rushed with water, it is 3 to be then immersed in 98% sulfuric acid with dioxygen water volume ratio：In 1 solution,
30min is heated at 80 DEG C, is taken out and is rinsed with a large amount of water, now silicon chip is hydrophilic.
Wherein, nano-wire array surface texture or micro-nano composite array surface texture can be built in the 3rd step
Silicon chip.
Wherein, the 3rd step is further specially：
Prepare silicon nanowire array：The mixed reaction solution of configuration HF and silver nitrate, is poured into ptfe autoclave,
The smooth silicon of second step cleaning is added, is added a cover and is placed in heating response 20min in 50 DEG C of baking ovens.Because polytetrafluoro reactor kettle wall compared with
, to ensure reaction effect, before silicon chip is added, should be put into reaction solution in 50 DEG C of baking ovens in advance and preheat 10min by thickness.Reaction
Silicon chip is taken out after 20min, with nitric acid dousing 15s or so to remove the silver-colored film of the grey that sample surfaces are covered, then with a large amount of
Water is rinsed, high pure nitrogen drying,
Prepare micron and nanometer composite structure：The mixed reaction solution of configuration HF and silver nitrate, is poured into ptfe autoclave
In, the silicon micron post piece of second step cleaning is added, add a cover and be placed in heating response 20min in 50 DEG C of baking ovens.Because of polytetrafluoro reactor
Kettle wall is thicker, to ensure reaction effect, before silicon chip is added, reaction solution should be put into 50 DEG C of baking ovens in advance and preheat 10min.Instead
Answer time control hydrogen for 10min, otherwise etching time is long, micron post can be etched away.Silicon chip is taken out, nitric acid dousing is used
15s or so with remove sample surfaces covering grey silver-colored film, then with a large amount of water rinse, high pure nitrogen dry up.
Wherein, the concentration of HF is 5mol/L in mixed reaction solution, and the concentration of silver nitrate is 0.02mol/L, mixed reaction solution
Specific preparation method be：Weigh silver nitrate 0.1699g to be put into plastic beaker, draw 10ml hydrofluoric acid with syringe, then add
Water is made into 50ml mixed solutions.
Wherein, the 4th step can prepare hydrophobic surface by vapour deposition.
4th step is further specially the silicon chip that cleans up second step and prepared by the 3rd step with surface texture
Silicon chip, dried up with high pure nitrogen, silicon chip is put into vacuum desiccator at once, instill one and drip silicon fluoride, vacuumize, keep true
Empty condition 2h, hydroxylated silicon chip forms the monolayer of silicon fluoride under silicon fluoride steam atmosphere on surface, so as to form thin
Water surface.When super hydrophobic surface is prepared, the time for vacuumizing and keeping is 12h.
The present invention is by above-mentioned work drop (first step selection) and the hydrophobic substrate (second and third step be obtained) for preparing, thin
Water base bottom (the 4th step is obtained) is applied to change the technical of high-temp solid surface drop wellability.
First, the work drop of various concentrations is dropped in high temperature water-wetted surface and hydrophobic surface from level altitude.
Second, infiltrated under the high temperature conditions using high-speed camera record drop and remove impregnation process.
3rd, the infiltration behaviorism theory process of relatively more above-mentioned each drop.
Beneficial effects of the present invention:
The method that the present invention provides a kind of regulation and control high-temp solid surface drop wellability, effectively improves the biography in diabatic process
The thermal efficiency, realizes augmentation of heat transfer, and then energy saving；And preparation method is simple and practical, cost of manufacture relatively economical will not increase
Production cost.
Brief description of the drawings
Fig. 1 Experimental equipments；
Fig. 2 electromicroscopic photographs：(a) smooth silicon；(b) nano thread structure；
The contact angle of the water of the smooth silicon of Fig. 3 and nano thread structure before and after silicon fluoride modification；
Infiltration transition process of Fig. 4 surfactant SDSs drop in water-wetted surface；
Fig. 5 surfactant SDSs drop is in the infiltration transition temperature of hydrophobic surface and the relation of solution concentration；
Fig. 6 SiO2Relation curve between nano-fluid concentration and Leidenfrost temperature:(a) hydrophilic silicon face, (b) parent
Water silicon face；
Specific embodiment
Below in conjunction with the accompanying drawings and specific embodiment, the present invention is expanded on further.It should be understood that these embodiments are merely to illustrate
The present invention rather than limit the scope of the invention.In addition, it is to be understood that after the content that the present invention is lectured is read, ability
Field technique personnel can make various changes or modification to the present invention, and these equivalent form of values also belong to the application appended claims
Book limited range.
The present invention provides a kind of method for changing high-temp solid surface drop wellability, effectively improves the heat transfer effect between solid-liquid
Rate, heat transfer enhancement technology.The substrate uses smooth silicon chip and mask plate etches the silicon micron post that smooth silicon chip is obtained
Substrate.
Specific method includes：
The first step, the selection of the drop that works；
Second step, the cleaning of silicon chip；
3rd step, the preparation of surface texture；
4th step, the structure of hydrophobic surface.
Wherein, the first step can select deionized water, the aqueous solution of surfactant sodium dodecyl base sodium sulfonate SDS,
SiO2Nano-fluid and colloid of iron oxide etc. are used as work drop.
Wherein, the second step is further specially smooth silicon chip (p-type, crystal orientation 100) and silicon with micrometer structure
Piece (being obtained using mask plate etching P, the smooth silicon of crystal orientation 100 using mask plate Beijing University micro-nano technology laboratory) is soaked successively respectively
Enter ultrasound 15min in acetone, ethanol, after being rushed with water, it is 3 to be then immersed in 98% sulfuric acid with dioxygen water volume ratio：In 1 solution,
30min is heated at 80 DEG C, is taken out and is rinsed with a large amount of water, now silicon chip is hydrophilic.
Wherein, nano-wire array surface texture or micro-nano composite array surface texture can be built in the 3rd step
Silicon chip.
Wherein, the 3rd step is further specially：
Prepare silicon nanowire array：The mixed reaction solution of configuration HF and silver nitrate, is poured into ptfe autoclave,
The smooth silicon of second step cleaning is added, is added a cover and is placed in heating response 20min in 50 DEG C of baking ovens.Because polytetrafluoro reactor kettle wall compared with
, to ensure reaction effect, before silicon chip is added, should be put into reaction solution in 50 DEG C of baking ovens in advance and preheat 10min by thickness.Reaction
Silicon chip is taken out after 20min, with nitric acid dousing 15s or so to remove the silver-colored film of the grey that sample surfaces are covered, then with a large amount of
Water is rinsed, high pure nitrogen drying,
Prepare micron and nanometer composite structure：The mixed reaction solution of configuration HF and silver nitrate, is poured into ptfe autoclave
In, the silicon micron post piece of second step cleaning is added, add a cover and be placed in heating response 20min in 50 DEG C of baking ovens.Because of polytetrafluoro reactor
Kettle wall is thicker, to ensure reaction effect, before silicon chip is added, reaction solution should be put into 50 DEG C of baking ovens in advance and preheat 10min.Instead
Answer time control hydrogen for 10min, otherwise etching time is long, micron post can be etched away.Silicon chip is taken out, nitric acid dousing is used
15s or so with remove sample surfaces covering grey silver-colored film, then with a large amount of water rinse, high pure nitrogen dry up.
Wherein, the concentration of HF is 5mol/L in mixed reaction solution, and the concentration of silver nitrate is 0.02mol/L, mixed reaction solution
Specific preparation method be：Weigh silver nitrate 0.1699g to be put into plastic beaker, draw 10ml hydrofluoric acid with syringe, then add
Water is made into 50ml mixed solutions.
Wherein, the 4th step can prepare hydrophobic surface by vapour deposition.
4th step is further specially the silicon chip that cleans up second step and prepared by the 3rd step with surface texture
Silicon chip, dried up with high pure nitrogen, silicon chip is put into vacuum desiccator at once, instill one and drip silicon fluoride, vacuumize, keep true
Empty condition 2h, hydroxylated silicon chip forms the monolayer of silicon fluoride under silicon fluoride steam atmosphere on surface, so as to form thin
Water surface.When super hydrophobic surface is prepared, the time for vacuumizing and keeping is 12h.
The present invention is by above-mentioned work drop (first step selection) and the hydrophobic substrate (second and third step be obtained) for preparing, thin
Water base bottom (the 4th step is obtained) is applied to change the technical of high-temp solid surface drop wellability.
First, the work drop of various concentrations is dropped in high temperature water-wetted surface and hydrophobic surface from level altitude.
Second, using the infiltration under the high temperature conditions of camera record drop with remove impregnation process
3rd, the infiltration behaviorism theory process of relatively more above-mentioned each drop.
The principle that the present invention changes high-temp solid surface drop wellability is mainly：
The chemical composition and roughness of the surface of solids can significantly affect the infiltration transition process of drop.When falling parent under drop
During water surface, coarse structure helps to increase the Maximum Contact area of drop, maximum evaporation area and infiltration transition temperature.In fluorine
Hydride modified coarse structure, at room temperature, drop is unable to complete wetting rough surface, can be formed between the surface of solids and drop
One layer of air pad, helps to reduce infiltration transition temperature.Heat transfer medium can change the wellability for changing the surface of solids, make solid
When surface becomes more hydrophilic, liquid increases with effective contact area of solid, it can be promoted to seethe with excitement, so as to accelerate solid-liquid
Between diabatic process.The heat transfer medium particle of deposition increased the roughness of the surface of solids in addition, increased the core of vaporizing liquid
The heart, accelerates the boiling of liquid.
The present invention provides a kind of method of the wellability for changing high-temp solid surface drop, and it uses prepared by the above method
Solid interface and modified work drop with microstructure and chemical composition.
It is applied to change the drop infiltration behavior of high-temp solid surface present invention also offers above-mentioned interface and work drop
Process.
Describe embodiments of the present invention in detail using embodiment below, whereby to the present invention how application technology means
To solve technical problem, and reach the implementation process of technique effect and can fully understand and implement according to this.
Embodiment 1：
In the present embodiment, work drop uses surfactant sodium dodecyl base sodium sulfonate SDS solution, and base material is smooth
Silicon chip.
The first step, the selection of the drop that works；
First step selection surfactant sodium dodecyl base sodium sulfonate SDS solution as work drop, configuration 0mol/L,
1.0×10-3mol/L、4.0×10-3mol/L、9.0×10-3mol/L、1.0×10-2The water of the dodecyl sodium sulfate of mol/L
Solution.
Second step, the cleaning of silicon chip；
The second step is further specially and immerses in acetone, ethanol smooth silicon chip (p-type, crystal orientation 100) successively respectively
Ultrasonic 15min, after being rushed with water, it is 3 to be then immersed in 98% sulfuric acid with dioxygen water volume ratio：In 1 solution, heated at 80 DEG C
30min, takes out and is rinsed with a large amount of water, and now silicon chip is hydrophilic.
3rd step, the structure of hydrophobic surface.3rd step is further specially the silicon chip that cleans up second step and the
Silicon chip with surface texture prepared by two steps, is dried up with high pure nitrogen, and silicon chip is put into vacuum desiccator at once, instills one
Drop silicon fluoride, vacuumizes, and keeps vacuum condition 2h, hydroxylated silicon chip to form silicon fluoride on surface under silicon fluoride steam atmosphere
Monolayer, so as to form hydrophobic surface.
As shown in figure 1, building experimental provision.Experiment needs first to adjust the position of light source, high-speed camera, substrate before starting
Put, it is ensured that three on the same line, while shown substrate side on camera control display will be clear that.
After adjusting light path, after regulating light path, substrate is heated using thermal station, and with thermocouple assay substrate
Temperature, after temperature is increased to assigned temperature, the injection of drop is carried out using syringe pump, and injection speed is 0.01mL/min, liquid
The height of drop of drop is 3.5mm.When falling since the drop, the video cameras of OLYMPUS i-SPEED 3 are used with 1000frame/s
Speed record the whole dropping process of drop, wherein the temperature range tested is 50~300 DEG C.
Shown in surface topography such as Fig. 2 (a) of wherein smooth silicon, the contact angle of water of the smooth silicon before and after through silicon fluoride modification
As shown in Figure 3.
From Fig. 4 and Fig. 5 it is observed that after hydrophilic smooth silicon face is fallen under drop, surfactant can change
Become the wellability of substrate, thus the temperature of infiltration transformation can be reduced.With the increase of the concentration of the surfactant for adding, liquid
The temperature that drop starts spring is gradually reduced；When critical micelle concentration is reached, even if being further added by the concentration of surfactant, drop
The temperature for starting spring will keep constant.And hydrophobic surface helps to reduce infiltration transition temperature.
Embodiment 2：
In the present embodiment, work drop uses SiO2Nano-fluid, base material is silicon nanowire structure.
The first step, the selection of the drop that works；
The first step selects SiO2Nano-fluid is used as work drop.Configuration 0g/L, 0.05g/L, 0.1g/L, 0.2g/
The nano-fluid of L, 0.3g/L, but saved backup in being respectively placed in the volumetric flask of 100mL.Due to nano-particle exist it is small
Dimensional effect, is susceptible to reunite, therefore ultrasonic disperse is carried out in ultrasonic machine in process for preparation, and ultrasonic time is 10h.Treat
Next time also first will carry out ultrasonic disperse using preceding in ultrasonic machine, it is to avoid the reunion of nano-particle occur, influence experiment effect
Second step, the cleaning of silicon chip；
Smooth silicon chip (p-type, crystal orientation 100) is immersed into ultrasound 15min in acetone, ethanol successively respectively, after being rushed with water, then
It is 3 to immerse 98% sulfuric acid with dioxygen water volume ratio：In 1 solution, 30min is heated at 80 DEG C, take out and rinsed with a large amount of water, this
When silicon chip for hydrophilic.
3rd step, the preparation of surface texture；
Wherein, nano-wire array surface texture can be built in the 3rd step.3rd step is further specially：
Prepare silicon nanowire array：The mixed reaction solution of configuration HF and silver nitrate, is poured into ptfe autoclave,
The smooth silicon of first step cleaning is added, is added a cover and is placed in heating response 20min in 50 DEG C of baking ovens.Because polytetrafluoro reactor kettle wall compared with
, to ensure reaction effect, before silicon chip is added, should be put into reaction solution in 50 DEG C of baking ovens in advance and preheat 10min by thickness.Reaction
Silicon chip is taken out after 20min, with nitric acid dousing 15s or so to remove the silver-colored film of the grey that sample surfaces are covered, then with a large amount of
Water is rinsed, high pure nitrogen drying.
4th step, the structure of hydrophobic surface.
Silicon chip with nanostructured structure prepared by the 3rd step, is dried up with high pure nitrogen, and silicon chip is put into vacuum at once
In drier, instill one and drip silicon fluoride, vacuumize, keep vacuum condition 2h, hydroxylated silicon chip is under silicon fluoride steam atmosphere
The monolayer of silicon fluoride is formed on surface, so as to form hydrophobic surface.
As shown in figure 1, building experimental provision.Experiment needs first to adjust the position of light source, high-speed camera, substrate before starting
Put, it is ensured that three on the same line, while shown substrate side on camera control display will be clear that.
After adjusting light path, after regulating light path, substrate is heated using thermal station, and with thermocouple assay substrate
Temperature, after temperature is increased to assigned temperature, the injection of drop is carried out using syringe pump, and injection speed is 0.01mL/min, liquid
The height of drop of drop is 3.5mm.When falling since the drop, the video cameras of OLYMPUS i-SPEED 3 are used with 1000frame/s
Speed record the whole dropping process of drop.
It can be seen that, wherein shown in the surface topography of the nanostructured for preparing such as Fig. 2 (b), nanostructured is modified through silicon fluoride
Front and rear contact angle is as shown in Figure 3.
From Fig. 6 SiO2Relation curve between nano-fluid concentration and Leidenfrost temperature is it is observed that in hydrophilic silicon
In nano thread structure substrate, with the increase of nano-fluid concentration, the Leidenfrost temperature of drop is all constantly to raise
's.Because after pyrometric scale face is fallen under nano-fluid drop, nano-particle can be deposited on the surface of solids, so as to change
The roughness and wellability of the surface of solids, and the nano-particle for depositing can turn into the core of vaporizing liquid, accelerate liquid
Boiling, promotes the heat transfer between solid-liquid so that the infiltration transition temperature of drop is improved.In hydrophobic surface of silicon nanowires, drop
Leidenfrost temperature be all to reduce with the increase of nanoparticle concentration.Because the nanostructured on surface can be
Bubble nucleating provides more sites, therefore, thicker steam layer can be just formed under low temperature, and then may be prevented from drop in height
The extension on warm surface.
All above-mentioned this intellectual properties of primarily implementation, the not this new product of implementation of setting limitation other forms
And/or new method.Those skilled in the art will be using this important information, the above modification, to realize similar execution feelings
Condition.The above, is only presently preferred embodiments of the present invention, is not the limitation for making other forms to the present invention, any ripe
Know the equivalent reality that professional and technical personnel was changed or be modified as equivalent variations possibly also with the technology contents of the disclosure above
Apply example.But it is every without departing from technical solution of the present invention content, above example is made according to technical spirit of the invention
Any simple modification, equivalent variations and remodeling, still fall within the protection domain of technical solution of the present invention.
Claims (10)
1. a kind of method for changing high-temp solid surface drop wellability, it is characterised in that comprise the following steps：
The first step, the selection of the drop that works；
Second step, the cleaning of substrate；
3rd step, the preparation of surface texture；
4th step, the structure of hydrophobic surface.
2. the method for changing high-temp solid surface drop wellability as claimed in claim 1, it is characterised in that：The substrate is adopted
The silicon micron base for post bottom that smooth silicon chip is obtained is etched with smooth silicon chip or mask plate.
3. the method for changing high-temp solid surface drop wellability as claimed in claim 1 or 2, it is characterised in that：Described
One step selection deionized water, the aqueous solution, the SiO of surfactant sodium dodecyl base sodium sulfonate SDS2Nano-fluid and iron oxide glue
One or more conduct work drop in body.
4. the method for changing high-temp solid surface drop wellability as described in any one of claims 1 to 3, it is characterised in that：
The second step is that substrate is immersed into ultrasound 5min in acetone, ethanol successively respectively, is then immersed in 98% sulfuric acid and dioxygen water body
Product is than being 3：30min in 1 solution, rinse, dry up it is standby.
5. the method for changing high-temp solid surface drop wellability as described in any one of Claims 1-4, it is characterised in that：
3rd step is the silicon chip for building nano-wire array surface texture or micro-nano composite array surface texture.
6. the method for changing high-temp solid surface drop wellability as claimed in claim 5, it is characterised in that：3rd step is specific
For, in the mixed solution of silicon chip immersion 5mol/L HF and the 0.02mol/L silver nitrates that second step is cleaned up, 50 DEG C of conditions
Taken out after lower reaction 20min, nitric acid dousing 15s, a large amount of water are rinsed, and are dried up standby.
7. the method for changing high-temp solid surface drop wellability as claimed in claim 6, it is characterised in that：When preparing micro-nano
The silicon chip of rice composite array surface texture, etching time is 10min.
8. the method for changing high-temp solid surface drop wellability as described in any one of claim 1 to 7, it is characterised in that：
4th step can prepare hydrophobic surface by vapour deposition.
9. the method for changing high-temp solid surface drop wellability as claimed in claim 8, it is characterised in that：Second step is clear
Silicon chip with surface texture prepared by the silicon chip of wash clean and the 3rd step, is dried up with high pure nitrogen, is at once put into silicon chip
In vacuum desiccator, instill one and drip silicon fluoride, vacuumize, keep vacuum condition 2h, hydroxylated silicon chip is in silicon fluoride steam atmosphere
The monolayer of silicon fluoride is formed under enclosing on surface, so as to form hydrophobic surface；When super hydrophobic surface is prepared, vacuumize and protect
The time held is 12h.
10. the purposes of the method for changing high-temp solid surface drop wellability described in any one of claim 1-9, its feature exists
In comprising the following steps：
First, the work drop of various concentrations is dropped in high temperature water-wetted surface and hydrophobic surface from level altitude.
Second, infiltrated under the high temperature conditions using high-speed camera record drop and remove impregnation process.
3rd, the infiltration behaviorism theory process of relatively more above-mentioned each drop.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109556445A (en) * | 2018-11-28 | 2019-04-02 | 上海置信节能环保有限公司 | Heat transfer control device and method |
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| CN112033198B (en) * | 2020-08-26 | 2021-07-13 | 西安交通大学 | Gallium-based liquid metal high-speed flowing capillary copper pipe capable of containing oxidation layer and preparation method thereof |
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