CN106910792A - 一种多晶硅薄膜太阳能电池 - Google Patents

一种多晶硅薄膜太阳能电池 Download PDF

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CN106910792A
CN106910792A CN201710320537.XA CN201710320537A CN106910792A CN 106910792 A CN106910792 A CN 106910792A CN 201710320537 A CN201710320537 A CN 201710320537A CN 106910792 A CN106910792 A CN 106910792A
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蒋建宝
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WUXI SAIJING SOLAR Co Ltd
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Abstract

本发明公开了一种多晶硅薄膜太阳能电池，包括设置在底部的硅片，在所述硅片上依次设有背面ZnO基薄膜层、背面氮化硅钝化层、p+/n+型多晶硅籽晶层、p‑/n‑型多晶硅吸收层、n+/p+型a‑Si：H发射层、TCO玻璃、正面ZnO基薄膜层、正面氮化硅钝化层以及多个电极。本发明工艺简单，光电转换效率显著增加，电池性能和稳定性高，使用寿命长。

Description

一种多晶硅薄膜太阳能电池
技术领域
本发明属于太阳能能源利用技术领域，特别是指一种多晶硅薄膜太阳能电池。
背景技术
能源短缺和环境污染是世纪人类所面临的两个重大问题，成为国际社会经济发展的瓶颈。太阳能作为清洁无污染的可再生能源提供了解决这两个问题的最好方案。目前，如何研制出光电转换效率高、寿命长、性能稳定以及成本低廉的太阳电池已经引起了全世界的广泛关注。因此，基于时代发展的需要，太阳电池具有广阔的发展空间。
太阳能光伏发电市场正蓬勃发展，在过去10年间，太阳电池市场每年以40%的比例迅速增长，其中晶体硅太阳电池占据了太阳电池近90%的市场份额。晶体硅太阳电池组件中硅晶片的成本约占太阳电池总成本的50%，即使生产技术不断精进与发展!进一步大幅降低晶体硅太阳电池的制备成本也已经达到极限；因此，薄膜化或薄层化成为降低太阳电池成本的主要手段和发展趋势。薄膜太阳电池（TFSC）较晶体硅太阳电池，具有弱光性能优良、原材料消耗大幅降低和成本低等优势。并且，TFSC还可在柔性衬底上制备，具有韧性好、可折叠、可卷曲以及可大面积生产等优点，未来可应用于衣服、汽车玻璃、飞机以及建筑物等表面。
但是传统的薄膜太阳电池存在能量转换效率较低的问题，并且制备工艺复杂，薄膜厚度还有待进一步压缩。
电池背面的工艺十分简单，直接将铝浆印刷在整个背面，烧结后形成电池背电极。由于电池背面的硅片表面没有钝化，有大量缺陷态存在，因此电子 – 空穴对复合率很高，降低了电池的光电转换效率，成为影响电池性能的重要瓶颈之一。背面钝化层对于增加电池效率、提升电池性能有着非常重要的作用。传统上热氧化SiO2可对硅表面进行钝化，但热氧化SiO2难以进行单面生长，会对电池正面产生影响，降低器件性能。SiNx薄膜可以用于对硅的钝化，但是将这种薄膜应用到背面钝化时，由于存在“寄生效应”（Parasitic Effect），会降低太阳能电池的性能。也有人研究用 Al2O3 薄膜进行背面钝化，但依然存在“寄生效应”。而且，SiO2、SiNx、Al2O3 都是绝缘材料，不能导电，从而会增加电池的串联电阻，限制了其钝化作用。因而，电池背面钝化层技术至今依然是一个悬而未决的问题。
发明内容
本发明的目的是提供一种能量转化高、制造工艺简单、结构简单、薄膜厚度低，电池的光转化率高的多晶硅薄膜太阳能电池。
本发明所述的一种多晶硅薄膜太阳能电池，包括设置在底部的硅片，在所述硅片上依次设有背面ZnO基薄膜层、背面氮化硅钝化层、p+/n+ 型多晶硅籽晶层、p-/n-型多晶硅吸收层、n+/p+型a-Si：H发射层、TCO玻璃、正面ZnO基薄膜层、正面氮化硅钝化层以及多个电极。
进一步改进，所述的背面ZnO基薄膜层的厚度为40-100纳米。
进一步改进，所述的正面ZnO基薄膜层的厚度为80-200纳米。
进一步改进，所述的TCO玻璃由平板玻璃表面通过均匀镀上一层透明的导电氧化物薄膜而成。
本发明的有益效果在于：
本发明与传统的n/p型同质结电池结构不同，采用n+/p-/p+型的基本结构单元，在发射区使用了重掺杂工艺，发射区重掺杂能够形成顶层浅结重掺杂，大大提高了太阳能电池的能量转换效率，节约了成本；该电池还具有结构简单，制造工艺简单等优点。含TCO的多晶硅薄膜电池结构可极大提高光生载流子的收集率。
TCO玻璃直接沉积正面 ZnO 基薄膜层，为透明导电薄膜，可同时作为电池前电极、减反射层和钝化层。其一，正面 ZnO 基薄膜层作为电池前电极，替代现有的金属栅网电极，从而使整个电池的正面均成为有效受光面积，达到入射光利用率最大化，同时光生载流子无须再在 p-n 结表层作横向运动，大大提高其收集效率，这一方案完全解决了栅网金属前电极的缺点，可大幅增加电池转换效率；其二，正面 ZnO 基薄膜层作为减反射膜，并具有显著的硅表面钝化和体钝化作用，从而可作为减反射层和钝化层，完全替代SiNx薄膜，其减反射性能和钝化性能均优于SiNx薄膜，可提高电池的短路电流和开路电压，提升电池性能；其三，采用正面 ZnO 基薄膜层替代目前制备流程中减反射膜 SiNx 与正面电极两步工艺，可以达到减反射膜和前电极的一体化，显著降低产品成本。
在硅片上直接沉积背面ZnO基薄膜层，可作为钝化层。其一，ZnO基薄膜用于背面钝化层，能够有效消除电池背面的硅表面态和体缺陷态，钝化效果好，工艺简单，可以大幅度降低电子 – 空穴复合率，增加电池转换效率；其二，由于 ZnO 基薄膜背面钝化层的引入，电池背面硅表面具有清晰的界面，可以提高光的内部反射率，形成二次吸收，进一步增加电池的光电转换效率；其三，ZnO 基薄膜层具有高的电导率，导电性能好，不会增加电池的串联电阻，有利于提升电池性能。
与现有晶体硅太阳能电池相比，该晶体硅太阳能电池工艺简单，光电转换效率显著增加，电池性能和稳定性高，使用寿命长。
附图说明
图1是本发明的结构示意图。
具体实施方式
如图1所示，本发明所述的一种多晶硅薄膜太阳能电池，包括设置在底部的硅片1，在所述硅片上依次设有背面ZnO基薄膜层2、背面氮化硅钝化层3、p+/n+ 型多晶硅籽晶层4、p-/n-型多晶硅吸收层5、n+/p+型a-Si：H发射层6、TCO玻璃7、正面ZnO基薄膜层8、正面氮化硅钝化层9以及多个电极10。
所述的背面ZnO基薄膜层的厚度为40-100纳米，所述的正面ZnO基薄膜层的厚度为80-200纳米。
所述的TCO玻璃7由平板玻璃表面通过均匀镀上一层透明的导电氧化物薄膜而成。
本发明采用n+/p-/p+型的基本结构单元，在发射区使用了重掺杂工艺，发射区重掺杂能够形成顶层浅结重掺杂，大大提高了太阳能电池的能量转换效率，节约了成本；该电池还具有结构简单，制造工艺简单等优点。使用玻璃衬底，不但具有成本低廉、无毒害、透光性优良、化学稳定以及容易回收等优点，还具有一定的耐热性和机械强度；制备工艺简单，能进一步发展成更大的主动矩阵显示屏；含TCO的多晶硅薄膜电池结构可极大提高光生载流子的收集率。
本发明提供了一种多晶硅薄膜太阳能电池，以上所述仅是本发明的优选实施方法，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以作出若干改进，这些改进也应视为本发明的保护范围。

Claims (4)

1.一种多晶硅薄膜太阳能电池，其特征在于，包括设置在底部的硅片，在所述硅片上依次设有背面ZnO基薄膜层、背面氮化硅钝化层、p+/n+ 型多晶硅籽晶层、p-/n-型多晶硅吸收层、n+/p+型a-Si：H发射层、TCO玻璃、正面ZnO基薄膜层、正面氮化硅钝化层以及多个电极。
2.根据权利要求1所述的多晶硅薄膜太阳能电池，其特征在于，所述的背面ZnO基薄膜层的厚度为40-100纳米。
3.根据权利要求1所述的多晶硅薄膜太阳能电池，其特征在于，所述的正面ZnO基薄膜层的厚度为80-200纳米。
4.根据权利要求1所述的多晶硅薄膜太阳能电池，其特征在于，所述的TCO玻璃由平板玻璃表面通过均匀镀上一层透明的导电氧化物薄膜而成。
CN201710320537.XA 2017-05-09 2017-05-09 一种多晶硅薄膜太阳能电池 Pending CN106910792A (zh)

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CN111048625A (zh) * 2019-12-26 2020-04-21 浙江晶科能源有限公司 一种钝化接触p型电池的制备方法

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CN104916709A (zh) * 2015-05-29 2015-09-16 中山大学 一种结构为氧化物-金属多层膜/硅基太阳电池
CN206878022U (zh) * 2017-05-09 2018-01-12 无锡赛晶太阳能有限公司 一种多晶硅薄膜太阳能电池

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US20130327395A1 (en) * 2009-11-30 2013-12-12 Sumitomo Metal Mining Co., Ltd. Oxide evaporation material, transparent conducting film, and solar cell
CN102157572A (zh) * 2011-03-09 2011-08-17 浙江大学 晶体硅太阳能电池
CN104022170A (zh) * 2014-05-26 2014-09-03 无锡中能晶科新能源科技有限公司 一种多晶硅薄膜太阳能电池
CN104916709A (zh) * 2015-05-29 2015-09-16 中山大学 一种结构为氧化物-金属多层膜/硅基太阳电池
CN206878022U (zh) * 2017-05-09 2018-01-12 无锡赛晶太阳能有限公司 一种多晶硅薄膜太阳能电池

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111048625A (zh) * 2019-12-26 2020-04-21 浙江晶科能源有限公司 一种钝化接触p型电池的制备方法
CN111048625B (zh) * 2019-12-26 2021-10-22 浙江晶科能源有限公司 一种钝化接触p型电池的制备方法

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Application publication date: 20170630