CN106910580A - A kind of insulator surface plasma hydrophobicity is modified integral treatment method - Google Patents
A kind of insulator surface plasma hydrophobicity is modified integral treatment method Download PDFInfo
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- CN106910580A CN106910580A CN201710294910.9A CN201710294910A CN106910580A CN 106910580 A CN106910580 A CN 106910580A CN 201710294910 A CN201710294910 A CN 201710294910A CN 106910580 A CN106910580 A CN 106910580A
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- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 7
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- 239000000460 chlorine Substances 0.000 claims description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- -1 tetramethyl alkane Chemical class 0.000 claims description 5
- 229910014472 Ca—O Inorganic materials 0.000 claims description 3
- 229910018557 Si O Inorganic materials 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 3
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- 239000005052 trichlorosilane Substances 0.000 claims description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims 1
- 239000005049 silicon tetrachloride Substances 0.000 claims 1
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 16
- 239000004926 polymethyl methacrylate Substances 0.000 description 16
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- 229920000647 polyepoxide Polymers 0.000 description 15
- 238000012545 processing Methods 0.000 description 15
- 230000005284 excitation Effects 0.000 description 12
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
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- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
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- 238000005530 etching Methods 0.000 description 4
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000005416 organic matter Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229940058401 polytetrafluoroethylene Drugs 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 4
- 230000003373 anti-fouling effect Effects 0.000 description 3
- 230000000975 bioactive effect Effects 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
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- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B19/00—Apparatus or processes specially adapted for manufacturing insulators or insulating bodies
- H01B19/04—Treating the surfaces, e.g. applying coatings
Landscapes
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
Proposed by the present invention is a kind of modified integral treatment method of insulator surface plasma hydrophobicity, it is characterized in that comprising the following steps：（1）The treatment of insulator surface plasma cleaning；（2）Insulator surface plasma hydrophobicity modification.Advantages of the present invention：1）Improve insulator surface hydrophobic modified treatment effeciency and treatment effect；2）Quick insulator surface dry cleaning is realized, the bond strength of hydrophobic ingredients and insulator surface is improve；3）Improve insulator surface hydrophobicity performance, especially in highfield and photoenvironment surface hydrophobicity stability and persistence；4）Meet the hydrophobic modified process demand of insulator surface of integration；Improve continuity, stability and the uniformity of insulator surface plasma hydrophobicity modified technique；Improve the environment friendly of integrated artistic.
Description
Technical field
The present invention relates to a kind of modified integral treatment method of insulator surface plasma hydrophobicity, belong to electric power
Insulator process field in system.
Background technology
The resistance to pollution flashover of insulator surface and moisture-proof dodge the overall operation performance of capacity power system, in lifting power system
The stability that associate power equipment operation in power system can be improved along the wet lightning pressure in face and along face pollution flashover voltage of insulator
And security；The method of the lifting resistance to pollution flashover of insulator surface and wet lightning pressure includes at present：Regularly schedule inspection and clean, increase
Coverage, the hydrophobicity of raising insulator surface and exploitation of the volume or surface area of insulator to improve surface insulation are new
Isolator material.
The method of raising insulator surface hydrophobicity is mainly and is prevented using greenhouse vulcanization type silicon rubber in current power system
Pollution flashover coating（Referred to as RTV antifouling flush paints）, a kind of antifouling flush paint is disclosed in such as patent CN 104277529A, utilize
The antistatic adsorptivity and hydrophobicity of fluoride materials, and the hydrophobicity of organosilicon material can reduce insulating materials surface pair
The globule, dust and the adsorption effect with point particulate；But the weatherability of RTV antifouling flush paints is poor, be chronically exposed to highfield,
Easily occur aging in the environment of the factors such as illumination, high humility, surface hydrophobicity declines therewith.And for example patent CN
A kind of method for improving insulator surface hydrophobicity is disclosed in 103500621A, first a strata tetrafluoro is sprayed in insulator surface
Vinyl material, then solidifies the hot environment high temperature that insulator is placed in 200 degrees Celsius 5 minutes, finally in insulator surface
Poly tetrafluoroethylene of a layer thickness not less than 0.1 millimeter is formed, can relatively low polytetrafluoroethylene (PTFE) on surface using moisture and filth
The poor characteristic of film surface adhesion force, improves the hydrophobicity and resistance to pollution flashover and the ability of wet sudden strain of a muscle of insulator surface；But poly- four
Fluoride surface water droplet angle is about 110 °, and the hydrophobic effect on its surface has certain compared to the water contact angle of 120 ° of RTV coating
Gap；Insulator is different with the coefficient of expansion of surface polytetrafluoroethylmaterial material simultaneously, in the running environment of highfield and high temperature,
Easily cracking comes off the polytetrafluoroethylene film of formation so that insulator surface hydrophobicity performance declines；Therefore, how efficiently, ring
Protect, improve long duration and keep isolator material surface hydrophobic performance, have extensively in power system technical field of high voltage
General practical application request.
The content of the invention
Proposed by the present invention is a kind of modified integral treatment method of insulator surface plasma hydrophobicity, its purpose purport
Improving and keeping isolator material surface hydrophobic performance, meeting the application demand in power system technical field of high voltage.
Technical solution of the invention：A kind of insulator surface plasma hydrophobicity is modified integral treatment method,
The method is comprised the following steps：
（1）The treatment of insulator surface plasma cleaning；
（2）Insulator surface plasma hydrophobicity modification.
Advantages of the present invention：
1）Using low temperature plasma material surface hydrophobicity modification technology, the hydrophobic modified treatment effect of insulator surface is improve
Rate and treatment effect；
2）Employ and produce high activity, the method for the low temperature plasma cleaning and activated material surface of large area, realize quick
Insulator surface dry cleaning, the hydrophobic modified treatment effeciency of insulator plasma can be improved, be conducive to improve hydrophobic
Property composition and insulator surface bond strength；
3）Hydrophobicity is directly carried out to insulator surface using the low temperature plasma containing hydrophobic ingredients to be modified, can be in insulator
Surface introduces the hydrophobicity active group of fluorine-containing, silicon and chlorine, improves insulator surface hydrophobicity performance, especially in highfield and
The stability and persistence of surface hydrophobicity in photoenvironment；
4）By the way of insulator plasma surface cleaning and the treatment of insulator plasma surface hydrophobicity are combined,
Two kinds of functions of material surface cleaning and material surface modifying can be realized using plasma, is occurred using identical plasma
Device, only changes the condition of work of plasma, can produce the plasma of different qualities（First mentioned in this method etc.
Gas ions and the second plasma）, meet the hydrophobic modified process demand of insulator surface of integration；The insulation sublist of integration
The degree of participation that the modified pilot process operating personnel of insulator can be reduced with modified technique is cleaned in face, improves insulator surface etc.
The continuity of gas ions hydrophobicity modified technique, stability and uniformity, have ensured that insulator surface plasma hydrophobicity changes
The qualification rate of property；Enclosed processing method can reduce pollution of the insulator processing procedure to environment from source, improve whole
The environment friendly of body technology.
Brief description of the drawings
Accompanying drawing 1 is a kind of fundamental diagram of the modified integral treatment method of insulator surface plasma hydrophobicity.
Accompanying drawing 2 be insulator surface that the hydrophobic modified integral treatment method of insulator surface plasma is used etc. from
The hydrophobic modified processing device structure diagram of daughter.
Accompanying drawing 3 is a kind of workflow diagram of the modified integral treatment method of insulator surface plasma hydrophobicity.
Accompanying drawing 4 is the contrast images to the modified front and rear surfaces water contact of PMMA formula insulator surfaces hydrophobicity in embodiment 1.
Accompanying drawing 5 is PMMA formula insulator before processings surface FTIR analysis charts in embodiment 1.
Accompanying drawing 6 is surface FTIR analysis charts after PMMA formulas insulation subprocessing in embodiment 1.
Accompanying drawing 7 is the scan image of before processing PMMA formula insulator surface electronic scanner microscopes in embodiment 1.
Accompanying drawing 8 is the scan image of PMMA formula insulator surface electronic scanner microscopes after processing in embodiment 1.
Accompanying drawing 9 is the contrast to the modified front and rear surfaces water contact of epoxy resin formula insulator surface hydrophobicity in embodiment 2
Image.
Accompanying drawing 10 is the epoxy resin formula insulator before processing surface FTIR analysis charts of embodiment 2.
Accompanying drawing 11 is surface FTIR analysis charts after the epoxy resin formula of embodiment 2 insulation subprocessing.
Accompanying drawing 12 is the scan image of before processing epoxy resin formula insulator surface electronic scanner microscope in embodiment 2.
Accompanying drawing 13 is the scan image of epoxy resin formula insulator surface electronic scanner microscope after processing in embodiment 2.
1-1 is that main airway regulating valve, 1-2 are that time air flue regulating valve, 1-3 are that gas mixing chamber, 1-4 are gas-liquids two in accompanying drawing
It is that one-level flow divider, 1-6 are that two level shunt regulating valves, 1-7 are that two level shunt valves, 1-8 are anti-plasmas to mix chamber, 1-5
It is that insulator, 1-10 are that mechanical chuck, 1-11 are high voltage power supplies to answer device, 1-9.
Specific embodiment
A kind of insulator surface plasma hydrophobicity is modified integral treatment method, and the method is comprised the following steps：
（1）The treatment of insulator surface plasma cleaning；
（2）Insulator surface plasma hydrophobicity modification.
The modified integral treatment method of the insulator surface plasma hydrophobicity employs insulator surface plasma
Body hydrophobicity modification device, the insulator surface plasma hydrophobicity modification device includes main airway regulating valve 1-
1st, secondary air flue regulating valve 1-2, gas mixing chamber 1-3, gas-liquid two-phase hybrid chamber 1-4, one-level flow divider 1-5, the regulation of two level shunts
Valve 1-6, two level shunt valve 1-7, plasma reactor 1-8, mechanical chuck 1-10, high voltage power supply 1-11；Wherein, main airway is adjusted
Section valve 1-1 is located on main airway, and secondary air flue regulating valve 1-2 is, with secondary air flue, gas-liquid two-phase hybrid chamber to be serially connected with secondary air flue
1-4, main airway connects with gas mixing chamber 1-3 respectively with secondary air flue, gas mixing chamber 1-3 pass sequentially through one-level flow divider 1-5,
Connect with plasma reactor 1-8 after two level shunt regulating valve 1-6, two level shunt valve 1-7, outside plasma reactor 1-8
High voltage power supply 1-11 is met, the jet on plasma reactor 1-8 is corresponding with mechanical chuck 1-10 to be placed.
The step（1）Insulator surface plasma cleaning treatment, the process is comprised the following steps：
1）Insulator is fixed in mechanical chuck；
2）Regulation mechanical chuck rotating speed；
3）Open main airway regulating valve；
4）Open two level shunt regulating valves；
5）Apply high pressure and produce the first plasma；
6）Stalling mechanical chuck removes high pressure；
7）Check insulator surface clean-up performance.
The insulator is fixed in maximum gauge in the mechanical chuck of 400mm.
The step（1）It is middle regulation mechanical chuck rotating speed make insulator in insulator surface plasma cleaning procedures with
Mechanical chuck is with 1 ° to 10 ° per second of angular speed uniform rotation.
The step（1）The middle type for applying high pressure includes applying high-frequency and high-voltage or high voltage pulse, wherein high-frequency and high-voltage
Between 20000 hertz to 30000 hertz, voltage magnitude is between 8000 volts to 12000 volts for frequency；The weight of high voltage pulse
Between 300 hertz to 2000 hertz, voltage magnitude is between 15000 volts to 20000 volts for complex frequency.
After two level shunt regulating valves of the opening main airway regulating valve and opening, inertia is passed through in plasma reactor
The mixed gas of any one or two kinds of or two or more mixed gas in gas, specially helium, neon, argon gas, xenon；
High pressure is applied to the inert gas being passed through in plasma reactor and produces the first plasma；Applying electrion mistake
Excitation state and metastable helium of the excitation state, metastable atom played a major role in journey including the generation of these inert gases are former
Son, ar atmo, neon atom, xenon atom；There is oxygen atom, hydroxyl of strong oxidizing property and dirt-removing power etc. in first plasma
Active particle is that oxygen and water vapour molecule ionization by collision are produced by high energy electron and excitation state, metastable atom and in surrounding air
Raw.
Due to there is substantial amounts of electronics, cation, free radical, metastable molecule and atom in the first plasma, when
When plasma plume acts on the material surface being cleaned, physical etchings, chemical modification and surface-crosslinked physico can be produced
Process, so as to decompose or clear the pollution off；The final clean-up performance of insulator surface depends on the first produced plasma
The activity and absolute quantity of various active particles in body；The first plasma for producing belongs to low temperature plasma, will not damage
Insulator base material.
High energy electron and excitation state and metastable atomic collision insulating materials surface in first plasma, exhausted
Edge material surface carries out physical etchings, and it is small block organic matter fragment that the organic matter that bulk links is disassembled；First plasma
Highly reactive form of oxygen atom and hydroxyl in body can be acted on the organic pollutant of insulator surface, by the organic of remained on surface
Thing is decomposed into carbon dioxide and hydrone, realizes the disengaging that organic pollution shows from insulating materials；While the first plasma
In active particle also clash into insulator surface, there is physical etchings and chemical modification, increase the degree of roughness of insulator surface,
Insulator surface energy is improved, is that the insulator surface hydrophobicity of next step is modified and provides high-cleanness, high, high surface energy and change
Property substrate surface
After first corona treatment insulator surface 2 minutes to 5 minutes, mechanical chuck is stalled, remove high pressure and check insulation
Sub- surface cleanness degree, if insulating materials surface still remains impurity particle, the step of repeat S102 to S107, until surface
Residual without impurity such as dust, dirt and greases, can enter the modified S2 of the second main process insulator surface hydrophobicity.
Insulator surface plasma cleaning procedures Main Function is using the first plasma without hydrophobic substance
The impurity such as dust, dirt and the grease of insulator surface are removed, the cleannes on surface is improved, while the height in the first plasma
Can electronics and active heavy particle clash into material surface and cause that material surface occurs physical etchings, increase the coarse of insulator surface
Degree, improves the surface energy of insulator, and material surface after activation is easier to introduce hydrophobicity active group, carries out surface hydrophobic
Property it is modified.
Step (2) the insulator surface plasma hydrophobicity modification, the process is comprised the following steps：
1）To adding hydrophobic substance in gas-liquid two-phase blender；
2）Open time air flue regulating valve；
3）Regulation mechanical chuck rotating speed；
4）Apply high pressure and produce the second plasma；
5）The hydrophobic modified treatment of insulator surface.
The hydrophobic substance added in hydrophobic substance S201 is added in the blender to gas-liquid two-phase includes four chlorinations
One or more in silicon, hexamethyldisiloxane, tetramethyl alkane, trichlorosilane；These hydrophobic substances can change second etc.
The action activity of gas ions.
It is described to open time air flue regulating valve, be passed through in secondary air flue with main airway identical inert gas, in secondary air flue
Inert gas is flowed through and enters gas mixing chamber after gas-liquid two-phase blender, inert gas in time air flue in gas mixing chamber and
Inert gas in main airway is mixed to form working gas, and inert gas is by gas in adjusting valve regulation time air flue by secondary air flue
The proportional amount of hydrophobic substance in the amount of hydrophobic substance, and then the final working gas of control is taken away during liquid two-phase mixtures device,
The volume content of hydrophobic substance is controlled between 0.01% to 0.2% in working gas.
The speed of the regulation mechanical chuck rotational speed regulation Surface Modification of Insulating Material, the machinery in hydrophobicity modifying process
The rotating speed of chuck is between 1 ° to 4 ° of each second.
The applying high pressure produces the second plasma, is that the working gas to being passed through in plasma reactor is applied
Add high pressure the second plasma of generation, except containing electronics, cation, free radical, metastable state in the second plasma of generation
Molecule and atom outside, also touched containing electronics, cation, free radical, metastable molecule and atom and hydrophobic substance molecule
Hit the free group of the fluorine-containing of ionization generation, silicon and chlorine；Control and adjust the working gas stream for producing the second plasma
Speed, hydrophobic substance content, operating voltage and the action time with isolator material and operating distance, can reach regulation insulation
The purpose of sub- hydrophobic treatment effect, and then optimize the hydrophobic modified effect of insulator plasma；Press close to the height of insulator surface
The surface of energy electronics, cation, free radical, metastable molecule and atomic collision isolator material, opens isolator material table
Si-O, Al-O and Ca-O key in face, and the active group of fluorine-containing, silicon and chlorine is introduced on the surface of isolator material, reach raising
The purpose of isolator material surface hydrophobicity.
Second plasma by the jet on plasma reactor 1-8 formed a kind of grade of pattern from
Daughter source；Described jet be single tube jet jet or by some single tube jet injection port groups into it is one-dimensional or two-dimentional or three
Dimension Jet stream array plumage jet；Described single tube jet is needle ring structure or ring ring structure or ring-plane structure；This plasma
Source can effectively clean the surface of insulator with complex shape, improve the tidiness and surface energy on insulating materials surface.
Insulator surface plasma hydrophobicity modifying process Main Function be to adding hydrophobic substance in working gas,
By adjusting applied voltage species and intensity, the composition of hydrophobic substance and content, the flow velocity of working gas and ratio and
Treatment distance between two plasmas and insulating materials, be equably modified insulating materials surface.
The applying high pressure is produced in the second plasma and the hydrophobic modified processing procedure of insulator surface, applies high pressure class
Type include high-frequency and high-voltage and high voltage pulse, the wherein frequency of high-frequency and high-voltage between 20000 hertz to 30000 hertz, voltage amplitude
Value between 8000 volts to 12000 volts, the repetition rate of high voltage pulse between 300 hertz to 2000 hertz, Voltage Peak
Value is between 15000 volts to 20000 volts；It is modified 4 minutes to 10 that second corona treatment carries out material surface hydrophobicity
Stop after minute.
Apply high pressure to produce the second plasma is the hydrophobic modified key of insulator surface；Second plasma
Working gas is that a small amount of siliceous, chloride and fluorine-containing material is added on the basis of the working gas of the first plasma；The
In two plasmas except comprising the high energy electron, excitation state that contain in the first plasma and metastable active atomic and point
Son, also including siliceous, chloride and fluorine-containing active group；High energy electron, excitation state in second plasma and metastable
Atom and bioactive molecule first clash into the surface of insulating materials, open Ca-O, Al-O and Si-O key on insulating materials surface, second etc.
Siliceous, the chloride and fluorine-containing active group carried in gas ions and the chemical bonds of fracture, divide into insulating materials surface
In sublayer, the purpose of Surface Modification of Insulating Material is reached；The type and amplitude, primary and secondary air flue of control and regulation applied voltage are adjusted
The process time that the flow velocity of the inert gas flowed through in section valve, the content of addition hydrophobic substance and insulator hydrophobicity are modified
With treatment spacing, thus it is possible to vary the modified effect of insulator surface hydrophobicity.
It is critical only that for whole processing method applies the first plasma of high pressure generation, applies high pressure the second plasma of generation
Body and realize the first plasma and the second plasma integration plasma-generating technologies.
The key problem in technology for realizing producing the second plasma integrated treatment of the first plasma and generation is different spies
Property low temperature plasma generation, control and adjust；In the method for the present invention, change the kind of the working gas in plasma
The component of class and mixed gas, adjusts the gas flow rate of different plasma unit in plasma producing apparatus and applies electricity outward
Pressure amplitude value produces the plasma of different activities characteristic；In the method, the characteristic of applied voltage and the spy of working gas are changed
Property can produce respectively for insulator surface cleaning the first plasma and for insulator surface it is hydrophobic modified second
Plasma, whole process need not additionally increase chemically or physically means, realize that insulator surface plasma is hydrophobic modified
Integrated treatment.
The apparatus and method that this method is related to be adapted to treatment insulator diameter between in 140 millimeters to 200 millimeters, height
Between between 100 millimeters to 500 millimeters, porcelain class insulator, toughened glass insulator and composite class insulator can be processed.
With reference to embodiment, the present invention will be further described.
Embodiment 1
The PMMA being processed in the present embodiment（Polymethyl methacrylate）150 millimeters of formula insulator diameter, 300 millimeters of height.
1）PMMA formula insulators are fixed on maximum gauge in the mechanical chuck of 400mm, and with mechanical chuck with per second
1 ° to 10 ° of angular speed uniform rotation, in installation process, it is necessary to ensure the axis of the insulator of column in vertical direction with water
Flat drift angle is no more than 4 °；
2）Controlled at 5 liters/min to 10 liters/min to argon gas, gas flow is passed through in plasma reactor by main airway
In interval；
3）, for 8kV ~ 12kV, power supply is frequently for outer high frequency voltage amplitude of applying on the high-field electrode and earth electrode of plasma reactor
Rate is 22kHz ~ 30kHz, the jet of the plasma jet array plumage of generation apart from the distance of insulator process face be 5mm extremely
8mm, process time is 4 minutes；Treatment closes main airway regulating valve 1-1 after terminating；
4）Inert argon gas ionizes generate electronics, metastable state Ar atoms in the electric field, these electronics, metastable state Ar atoms with week
Enclose oxygen and oxygen atom, the nitrogen molecule of excitation state, the hydroxyl particle of the generation of vapor ionization by collision in air；The electricity of generation
The spot of sub and metastable Ar atomic collisions material surface, the spot fragment for making it be cracked into fritter；Ionization by collision is produced simultaneously
Raw oxygen atom and hydroxyl particle decompose the organic matter in spot, and the oxidation operation in spot is resolved into carbon dioxide
And water vapour molecule；
5）After the completion of insulator surface cleaning process, main airway regulating valve 1-1 is again turned on, gas flow is controlled at 7 liters/min
To 12 liters/min of intervals, time air flue regulating valve 1-2 is opened, separately by the small of one 200 ml/min to 400 ml/mins
Flow argon gas, using secondary air flue by a gas-liquid two-phase hybrid chamber 1-4 for filling hexamethyldisiloxane, is mixed with containing hexamethyl two
Gas in the low discharge argon gas and main airway of silicon ether is passed through in the reaction chamber of plasma after being sufficiently mixed as working gas；
The content of taken out of hexamethyldisiloxane is relevant with small-flow gas flow velocity, by the flow velocity of regulation time air flue medium-small flow argon gas
To adjust the content of hexamethyldisiloxane, the gas flow rate of low discharge argon gas is higher, is mixed into the silicon of hexamethyl two in working gas
Ether content is higher；
6）Regulation mechanical chuck is with 6 ° per second of angular speed uniform rotation；
7）The outer frequency that applies is for 22kHz, amplitude are 8kV's on the high-field electrode and earth electrode of plasma reactor 1-8
High-frequency and high-voltage, produces the jet opening distance treatment material bottom 5mm of plasma plume, plasma treated material surface hydrophobicity to change
Property 4 minutes to 10 minutes after stop.
Except comprising the high energy electron, excitation state that contain in the first plasma and metastable argon in second plasma
Atom, also including siliceous and methylic active group；High energy electron, excitation state and metastable original in second plasma
Son and bioactive molecule first clash into the surface of insulating materials, C-C the and C=C keys on insulating materials surface are opened, in the second plasma
The siliceous and methylic active group for carrying and the chemical bonds of fracture, into insulating materials superficial molecular, reach
The purpose of Surface Modification of Insulating Material.
Fig. 3 is the image of the modified front and rear surfaces water contact of PMMA formula insulator surfaces hydrophobicity, wherein (a) is untreated
When surface water contact image, now water contact angle is 80 °；B () is to carry out insulator surface using the first plasma for producing
Water contact image in surface after cleaning, after being cleaned through the first plasma surface, surface water contact angle drops to 70 °, and now surface is clear
Cleanliness is lifted, and surface can improve；C () is to carry out the hydrophobic modified rear surface water hookup of insulator surface using the second plasma
Picture, now water contact angle reach 120 °, it is untreated before 80 °, water contact angle has and is obviously improved, insulator surface hydrophobicity
Can lifting.
Fig. 4-5 is PMMA formulas insulator treatment front and rear surfaces FTIR analysis charts, it can be found that before processing PMMA tables from figure
C h bond ,-C=O keys, C-O-C keys etc. are contained in face, and introduce Si-O-Si keys, Si- the modified surface of surface hydrophobicity is carried out
CH3And Si -- H bond, after showing to be processed through insulator surface hydrophobicity, material surface is introduced containing Si and containing-CH3Group, surface
Hydrophobicity performance is improved.
Fig. 6-7 is the scan image of PMMA formula insulator surface electronic scanner microscopes after before processing, before processing PMMA tables
Face is amplified in 5000 times of image, microcosmic coplanar flat, and without obvious concavo-convex pattern, this is PMMA before processings in hydrophilic
Main cause；And find PMMA in the electronic scanner microscope surface sweeping figure of 5000 times of the amplification after the treatment of PMMA surface hydrophobicity
Surface forms the crystalline solid of flakes, and the crystal structure of these flakes is made up of coralloid concaveconvex structure, and
These coralloid concaveconvex structures, are formed by the particle packing of micro/nano level.
Embodiment 2
Between 100 millimeters of the epoxy resin formula insulator diameter, 200 millimeters of the height that are processed in the present embodiment.
1）Epoxy resin formula insulator is fixed on maximum gauge in the mechanical chuck of 400mm, and with mechanical chuck with
3 ° to 8 ° per second of angular speed uniform rotation；, it is necessary to ensure the axis of the insulator of column in vertical direction in installation process
2 ° are no more than with horizontal sextant angle；
2）Controlled at 7 liters/min extremely to argon gas, gas flow is passed through in plasma reactor by main airway regulating valve 1-1
In 12 liters/min of intervals；
3）High frequency voltage amplitude is applied outside the high-field electrode of plasma reactor and the two ends of earth electrode for 10kV ~ 12kV,
Supply frequency is 25kHz ~ 30kHz；Distance of the jet of the plasma jet array plumage of generation apart from insulator process face
It is 2mm to 5mm, process time is 4 to 5 minutes；Treatment closes main airway regulating valve 1-1 after terminating；
4）Inert argon gas ionize in the electric field generate electronics, metastable state Ar atoms and with oxygen in surrounding air and vapor
Oxygen atom, the nitrogen molecule of excitation state and hydroxyl particle that ionization by collision is produced；The electronics of generation and metastable Ar atoms
Clash into the spot of material surface, the spot fragment for making it be cracked into fritter；Ionization by collision is produced simultaneously oxygen atom and hydroxyl
Particle decomposes the organic matter in spot, and makes its oxidation Decomposition into carbon dioxide and water vapour molecule；
5）After the completion of insulator surface cleaning process, main airway regulating valve 1-1 is again turned on, gas flow is controlled at 7 liters/min
To 12 liters/min of intervals, time air flue regulating valve 1-2 is opened, separately by the small of one 200 ml/min to 400 ml/mins
Flow argon gas, using secondary air flue by a gas-liquid two-phase hybrid chamber 1-4 for filling carbon tetrafluoride, is mixed with carbon tetrafluoride molecule
Low discharge argon gas is passed through in the reaction chamber of plasma after being sufficiently mixed with main airway air-flow as working gas；Taken out of tetrafluoro
The content for changing carbon is relevant with small-flow gas flow velocity, and carbon tetrafluoride content is adjusted by adjusting the flow velocity of low discharge argon gas, small
The gas flow rate of flow argon gas is higher, and the carbon tetrafluoride content being mixed into working gas is higher.6）Regulation mechanical chuck is with per second
6 ° of angular speed uniform rotation；
7) frequency is applied outside the high-field electrode of plasma reactor 1-8 and the two ends of earth electrode for 22kHz, amplitude are
The high-frequency and high-voltage of 13kV, produces the jet opening distance treatment material bottom 5mm of plasma plume, and plasma treated material surface is hated
Stop after watersoluble modified 4 minutes to 10 minutes.
Except comprising the high energy electron, excitation state that contain in the first plasma and metastable argon in second plasma
Atom, also including siliceous and chloride active group；High energy electron, excitation state and metastable atom in second plasma
The surface of insulating materials is first clashed into bioactive molecule, C-C the and C=C keys on insulating materials surface are opened, taken in the second plasma
The siliceous and methylic active group of band and the chemical bonds of fracture, into insulating materials superficial molecular, reach absolutely
The purpose of edge material surface modifying.
Fig. 8 is the image of the modified front and rear surfaces water contact of epoxy resin formula insulator surface hydrophobicity, wherein figure (a) is not
Water contact image in surface during treatment, now water contact angle is 85 °；Figure (b) is insulated using the first plasma for producing
Water contact image in surface after sub- surface cleaning, after being cleaned through the first plasma surface, surface water contact angle drops to 75 °, now
Surface cleanness is lifted, and surface can improve；Figure (c) is to carry out the hydrophobic modified rear surface of insulator surface using the second plasma
Water contact image, now water contact angle reach 125 °, contrast it is untreated before 80 °, water contact angle has and is obviously improved, and insulate
The hydrophobicity performance lifting of sublist face.
Fig. 9-10 is epoxy resin formula insulator treatment front and rear surfaces FTIR analysis charts, it can be found that treatment front ring from figure
Oxygen resin surface contains c h bond ,-C=O keys, C-O-C keys etc., and introduces Si-O- the modified surface of surface hydrophobicity is carried out
Si keys, Si-Cl and Si -- H bond, after showing to be processed through insulator surface hydrophobicity, material surface introduces the base containing Si and containing Cl
Group, surface hydrophobic performance is improved.
Figure 11-12 is the scan image of epoxy resin formula insulator surface electronic scanner microscope after before processing, from amplification
It can be found that undressed epoxy resin surface is presented smooth sheet in 5000 times of before processing epoxy resin surface image
Structure, this is that epoxy resin is presented hydrophilic main cause.And amplify 5000 times treatment treatment after epoxy resin electronics
In flying-spot microscope surface sweeping figure find epoxy resin surface form densification network structure, these fine and close network structures be by
The tubular structure of the particle composition of micro/nano level piles up what is formed.
Claims (12)
1. the modified integral treatment method of insulator surface plasma hydrophobicity, it is characterized in that comprising the following steps：
（1）The treatment of insulator surface plasma cleaning；
（2）Insulator surface plasma hydrophobicity modification.
2. the modified integral treatment method of insulator surface plasma hydrophobicity according to claim 1, it is characterized in that
Insulator surface plasma hydrophobicity modification device is employed, the insulator surface plasma hydrophobicity modification
Device includes main airway regulating valve, secondary air flue regulating valve, gas mixing chamber, gas-liquid two-phase hybrid chamber, one-level flow divider, two fractions
Stream regulating valve, two level shunt valves, plasma reactor, mechanical chuck, high voltage power supply；Wherein, main airway regulating valve is located at master
On air flue, secondary air flue regulating valve is and gas-liquid two-phase hybrid chamber, main airway and secondary air flue point on secondary air flue, is serially connected with secondary air flue
Do not connect with gas mixing chamber, gas mixing chamber pass sequentially through after one-level flow divider, two level shunt regulating valves, two level shunt valves with
Plasma reactor connects, plasma reactor external high voltage power supply, the jet on plasma reactor with machinery
Chuck correspondence is placed.
3. the modified integral treatment method of insulator surface plasma hydrophobicity according to claim 1, it is characterized in that
The step（1）The treatment of insulator surface plasma cleaning, comprises the following steps：
1）Insulator is fixed in mechanical chuck；
2）Regulation mechanical chuck rotating speed；
3）Open main airway regulating valve；
4）Open two level shunt regulating valves；
5）Apply high pressure and produce the first plasma；
6）Stalling mechanical chuck removes high pressure；
7）Check insulator surface clean-up performance.
4. the modified integral treatment method of insulator surface plasma hydrophobicity according to claim 3, it is characterized in that
It is described regulation mechanical chuck rotating speed make insulator in insulator surface plasma cleaning procedures with mechanical chuck with 1 ° per second
To 10 ° of angular speed uniform rotation.
5. the modified integral treatment method of insulator surface plasma hydrophobicity according to claim 3, it is characterized in that
After two level shunt regulating valves of the opening main airway regulating valve and opening, inert gas is passed through in plasma reactor；
High pressure is applied to the inert gas being passed through in plasma reactor and produces the first plasma；Contain in first plasma
There are the oxygen atom and hydroxyl active particle of strong oxidizing property and dirt-removing power.
6. the modified integral treatment method of insulator surface plasma hydrophobicity according to claim 1, it is characterized in that
The step（2）Insulator surface plasma hydrophobicity modification, comprises the following steps：
1）To adding hydrophobic substance in gas-liquid two-phase blender；
2）Open time air flue regulating valve；
3）Regulation mechanical chuck rotating speed；
4）Apply high pressure and produce the second plasma；
5）The hydrophobic modified treatment of insulator surface.
7. the modified integral treatment method of insulator surface plasma hydrophobicity according to claim 6, it is characterized in that
The hydrophobic substance added in hydrophobic substance is added in the blender to gas-liquid two-phase includes silicon tetrachloride, the silicon of hexamethyl two
One or more in ether, tetramethyl alkane, trichlorosilane.
8. the modified integral treatment method of insulator surface plasma hydrophobicity according to claim 6, it is characterized in that
It is described to open time air flue regulating valve, it is passed through in secondary air flue and main airway identical inert gas, the inert gas in secondary air flue
Enter gas mixing chamber after flowing through gas-liquid two-phase blender, in the inert gas and main airway in time air flue in gas mixing chamber
Inert gas be mixed to form working gas, inert gas is mixed by gas-liquid two-phase in adjusting valve regulation time air flue by secondary air flue
The proportional amount of hydrophobic substance in the amount of hydrophobic substance, and then the final working gas of control, working gas are taken away during clutch
The volume content of middle hydrophobic substance is controlled between 0.01% to 0.2%.
9. the modified integral treatment method of insulator surface plasma hydrophobicity according to claim 6, it is characterized in that
The speed of the regulation mechanical chuck rotational speed regulation Surface Modification of Insulating Material, mechanical chuck turns in hydrophobicity modifying process
Speed is between 1 ° to 4 ° of each second.
10. the modified integral treatment method of insulator surface plasma hydrophobicity according to claim 6, it is characterized in that
The applying high pressure produces the second plasma, is that the working gas to being passed through in plasma reactor applies high pressure product
Raw second plasma, in the second plasma of generation except containing electronics, cation, free radical, metastable molecule and
Outside atom, also produced containing electronics, cation, free radical, metastable molecule and atom and the ionization of hydrophobic substance molecular collision
The free group of raw fluorine-containing, silicon and chlorine；Control and adjust working gas flow velocity, the hydrophobicity for producing the second plasma
The content of material, operating voltage and the action time with isolator material and operating distance, reach the hydrophobic treatment of regulation insulator
The purpose of effect, and then optimize the hydrophobic modified effect of insulator plasma；Press close to insulator surface high energy electron, just from
The surface of son, free radical, metastable molecule and atomic collision isolator material, opens Si-O, the Al- on isolator material surface
O and Ca-O keys, and the active group of fluorine-containing, silicon and chlorine is introduced on the surface of isolator material, reach raising isolator material table
The purpose of face hydrophobicity.
11. insulator surface plasma hydrophobicities according to claim 6 are modified integral treatment method, it is characterized in that
Second plasma forms a kind of plasma source of pattern by the jet on plasma reactor 1-8；
Described jet be single tube jet jet or by some single tube jet injection port groups into one-dimensional two-dimentional or three-dimensional jet
Array plumage jet；Described single tube jet is needle ring structure or ring ring structure or ring-plane structure.
The 12. insulator surface plasma hydrophobicity according to claim 3 or 6 is modified integral treatment method, and it is special
It is that the type for applying high pressure includes applying high-frequency and high-voltage or high voltage pulse to levy, and wherein the frequency of high-frequency and high-voltage is at 20000 hertz
Hereby between 30000 hertz, voltage magnitude is between 8000 volts to 12000 volts；The repetition rate of high voltage pulse is at 300 hertz
Hereby between 2000 hertz, voltage magnitude is between 15000 volts to 20000 volts.
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| CN110400663A (en) * | 2019-07-23 | 2019-11-01 | 清华大学深圳研究生院 | A kind of method that fast lifting stains silastic material interface overcoating binding performance |
| CN111029908A (en) * | 2019-12-31 | 2020-04-17 | 南京工业大学 | Plasma surface modification device for improving carbon deposition resistance of spark plug |
| CN111146693A (en) * | 2019-12-31 | 2020-05-12 | 南京工业大学 | Plasma surface modification method for enhancing carbon deposition resistance of spark plug |
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| CN109298006A (en) * | 2018-08-31 | 2019-02-01 | 全球能源互联网研究院有限公司 | A kind of evaluation method and device of Hydrophobicity of Composite Insulator and migration of hydrophobicity |
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| CN111029908B (en) * | 2019-12-31 | 2021-06-15 | 南京工业大学 | Plasma surface modification device for improving carbon deposition resistance of spark plug |
| CN111261347A (en) * | 2020-01-21 | 2020-06-09 | 天津大学 | High-voltage direct-current basin-type insulator surface roughness functional gradient electric field homogenization method |
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