CN106910520A - The wiring method of storage device, storage device, storage control and storage system - Google Patents
The wiring method of storage device, storage device, storage control and storage system Download PDFInfo
- Publication number
- CN106910520A CN106910520A CN201610048582.XA CN201610048582A CN106910520A CN 106910520 A CN106910520 A CN 106910520A CN 201610048582 A CN201610048582 A CN 201610048582A CN 106910520 A CN106910520 A CN 106910520A
- Authority
- CN
- China
- Prior art keywords
- write
- voltage
- storage device
- storage
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
Abstract
The invention discloses a kind of wiring method of storage device, storage device, storage control and storage system, it is related to field of data storage.Invented to solve the problems, such as the service life of prior art influence storage device.Technical scheme includes disclosed in the embodiment of the present invention：First operation (S10)：By the selected memory cell in the basic read-write cell for presetting the first program voltage program storage；Second operation (S20)：Each memory cell in the basic read-write cell is read according to default first calibration voltage, the first reading result is obtained；3rd operation (S30)：The first quantity of the memory cell with correct dbjective state in the basic read-write cell is determined based on the described first reading result；4th operation (S40)：If the first quantity of the memory cell with correct dbjective state is more than preset first threshold value, terminate write operation.
Description
Technical field
The present invention relates to field of data storage, more particularly it relates to a kind of wiring method of storage device, deposit
Storage device, storage control and storage system.
Background technology
During using electronic equipment, electronic equipment constantly can be wiped and write to storage device.For tool
The storage device for limiting erasable number of times is had, in data writing process, storage device is applied to by program voltage first
Basic read-write cell whole memory cell；Then verify whether whole memory cell are all written correctly into and reach mesh
Mark state；When whole memory cell are all written correctly into and reach dbjective state, this write-in is just completed；Otherwise,
Need to write whole memory cell again after incremental voltage changes write-in voltage, until whole memory cell are all correct
Write and reach dbjective state.
However, due to requiring that whole memory cell are written into and reach dbjective state, therefore " write-in " that write operation needs
" checking " number of times is more, so cause write operation time is more long, time delay is larger, and to the infringement of storage device
It is larger, influence the service life of storage device.
The content of the invention
Time it is an object of the invention to shorten write operation, time delay is reduced, so as to reduce write operation to storage device
Infringement, and then extend the service life of storage device.
According to the first aspect of the invention, there is provided a kind of wiring method of storage device, including：First operation (S10)：
By the selected memory cell in the basic read-write cell for presetting the first program voltage program storage；Second behaviour
Make (S20)：Each memory cell in the basic read-write cell is read according to default first calibration voltage, is obtained
First reads result；3rd operation (S30)：Determined in the basic read-write cell based on the described first reading result
The memory cell with correct dbjective state the first quantity；4th operation (S40)：If had correct
First quantity of the memory cell of dbjective state is more than preset first threshold value, terminates write operation.
An implementation method according to a first aspect of the present invention, further, if the tool in the basic read-write cell
There is the first quantity no more than preset first threshold value of the memory cell of correct dbjective state, also include：5th operation
(S50)：First increment write-in voltage is obtained according to default first incremental voltage, and is write by first increment
Selected memory cell in the basic read-write cell of voltage-programming storage device；Re-execute second operation
(S20), until write operation terminates.
An implementation method according to a first aspect of the present invention, further, before the described first operation (S10),
Also include：Judge operation (S00)：Judge to store write mode or the second storage write mode using first；Such as
Fruit is, using the first storage write mode, to perform first operation (S10).
An implementation method according to a first aspect of the present invention, further, if the judged result is to use second
Storage write mode, also includes：6th operation (S60)：By presetting the second program voltage program storage
Selected memory cell in basic read-write cell；7th operation (S70)：Read by default first calibration voltage
Each memory cell gone out in the basic read-write cell, obtains the second reading result；8th operation (S80)：Base
Determine the of the memory cell with correct dbjective state in the basic read-write cell in the described second reading result
Two quantity；9th operation (S90)：If the second quantity of the memory cell with correct dbjective state is more than default
Second Threshold, terminates write operation；Tenth operation (S100)：If the number of the memory cell with correct dbjective state
Amount is not more than default Second Threshold, and the second increment write-in voltage is obtained according to default second incremental voltage, and by described
Selected memory cell in the basic read-write cell of the second increment write-in voltage-programming storage device；Re-execute institute
The 7th operation (S70) is stated, until write operation terminates；Wherein described second program voltage is more than the described first programming electricity
Pressure, and/or the Second Threshold is more than the first threshold, and/or first incremental voltage increases more than described second
Amount voltage.
An implementation method according to a first aspect of the present invention, further, the 7th operation (S70) is replaced with
By presetting each memory cell in the second calibration voltage reading basic read-write cell；Second calibration voltage
More than first calibration voltage.
An implementation method according to a first aspect of the present invention, it is further, described to judge that operation (S00) includes：
According to the writing commands for indicating different write modes, judge to store write mode or the second storage write-in mould using first
Formula；Or, the selection of the write mode according to user input is indicated, and judges to store write mode or the using first
Two storage write modes；Or, according to the status information of the storage device, judge to store write mode using first
Or the second storage write mode；Or, according to the instruction that default storage control sends, judge to be stored using first
Write mode or the second storage write mode.
An implementation method according to a first aspect of the present invention, further, also includes：Modification operation (S21)：
Setting according to user input indicates modification preset first threshold value, the first program voltage, the first incremental voltage and/or first
Calibration voltage；Or preset first threshold value, the first program voltage, the first increasing are changed according to the status information of storage device
Amount voltage and/or the first calibration voltage.
An implementation method according to a first aspect of the present invention, further, also includes：Modification operation (S22)：
Setting according to user input indicates modification default Second Threshold, the second program voltage, the second incremental voltage and/or second
Calibration voltage；Or increased according to the default Second Threshold of the status information of storage device modification, the second program voltage, second
Amount voltage and/or the second calibration voltage.
According to the second aspect of the invention, there is provided the wiring method of another storage device, including：First operation (S01)：
Obtain the stage of the life cycle residing for storage device；Second operation (S02)：When the life residing for the storage device
When the stage correspondence first in life cycle stores write mode, the storage device is indicated according to the first program voltage, first
Incremental voltage, the first calibration voltage and first threshold are programmed operation；When the life cycle residing for the storage device
Stage correspondence second when storing write mode, indicate the storage device according to the second program voltage, the second increment electricity
Pressure, the second calibration voltage and Second Threshold are programmed operation.
According to the second aspect of the invention, further, first program voltage is less than second program voltage,
And/or the first threshold is less than the Second Threshold.
According to the second aspect of the invention, further, first incremental voltage is more than second incremental voltage.
An implementation method according to the second aspect of the invention, further, the basis preset the first program voltage,
First incremental voltage, the first calibration voltage and first threshold are programmed operation to be included：By presetting the first program voltage
Selected memory cell in the basic read-write cell of program storage；Institute is read according to default first calibration voltage
Each memory cell in basic read-write cell is stated, the first reading result is obtained；Result is read based on described first to determine
First quantity of the memory cell with correct dbjective state in the basic read-write cell；If had correct
First quantity of the memory cell of dbjective state is more than preset first threshold value, terminates write operation；
The basis is preset the second program voltage, the second incremental voltage, the second calibration voltage and Second Threshold and is compiled
Journey operation includes：By the selected storage in the basic read-write cell for presetting the second program voltage program storage
Unit；By presetting each memory cell in the second calibration voltage reading basic read-write cell, the second reading is obtained
Go out result；Storage with correct dbjective state in the basic read-write cell is determined based on the described second reading result
Second quantity of unit；If the second quantity of the memory cell with correct dbjective state is more than default Second Threshold,
Terminate write operation.
An implementation method according to the second aspect of the invention, further, the basis preset the first program voltage,
First incremental voltage, the first calibration voltage and first threshold are programmed operation to be included：By presetting the first program voltage
Selected memory cell in the basic read-write cell of program storage；Institute is read according to default first calibration voltage
Each memory cell in basic read-write cell is stated, the first reading result is obtained；Result is read based on described first to determine
First quantity of the memory cell with correct dbjective state in the basic read-write cell；If had correct
First quantity of the memory cell of dbjective state is not more than preset first threshold value, and the is obtained according to default first incremental voltage
One increment writes voltage, and writes the institute in the basic read-write cell of voltage-programming storage device by first increment
The memory cell of selection；Re-execute and memory cell operation is read according to default first calibration voltage, until write operation knot
Beam；
The basis is preset the second program voltage, the second incremental voltage, the second calibration voltage and Second Threshold and is compiled
Journey operation includes：By the selected storage in the basic read-write cell for presetting the second program voltage program storage
Unit；By presetting each memory cell in the second calibration voltage reading basic read-write cell, the second reading is obtained
Go out result；Storage with correct dbjective state in the basic read-write cell is determined based on the described second reading result
Second quantity of unit；If the second quantity of the memory cell with correct dbjective state is not more than default Second Threshold,
Second increment write-in voltage is obtained according to default second incremental voltage, and voltage-programming is write by second increment and deposited
Selected memory cell in the basic read-write cell of storage device；Re-execute and read by default second calibration voltage
Memory cell is operated, until write operation terminates.
An implementation method according to the second aspect of the invention, further, first calibration voltage is with described
Two calibration voltages are identical.
An implementation method according to the second aspect of the invention, further, first calibration voltage is less than described
Second calibration voltage.
An implementation method according to the second aspect of the invention, further, methods described also includes：Deposited when described
When the stage correspondence first of the life cycle residing for storage device stores write mode, the storage device is set to first
Storage write mode；And when the stage correspondence second of the life cycle residing for the storage device stores write mode,
The storage device is set to the second storage write mode.
An implementation method according to the second aspect of the invention, further, methods described also includes：Indicate described
Storage device sets first program voltage, the second program voltage, the first calibration voltage, the second calibration voltage, the
One or more in one incremental voltage, the second incremental voltage, first threshold and Second Threshold.
An implementation method according to the second aspect of the invention, further, first operation (S01) includes：
The time of making the product, operating mistake number of times, read operation number of times, write operation number of times, the erasing experienced according to the storage device
The life cycle for determining residing for the storage device for one or more in number of operations and integral age.
According to the third aspect of the invention we, there is provided a kind of storage device, including：
Memory cell array, input and output control unit and logic control element comprising at least one memory cell；
The memory cell array, for data storage；
The input and output control unit, for carrying out data exchange between memory cell array and external device (ED)；
The logic control element, for the first control signal provided based on external device (ED), according to the first program voltage,
First incremental voltage, the first calibration voltage and first threshold are programmed operation to the memory cell array.
An implementation method according to the third aspect of the invention we, further, the logic control element is additionally operable to
Based on the second control signal that external device (ED) is provided, according to the second program voltage, the second incremental voltage, the first verification electricity
Pressure and Second Threshold are programmed operation to the memory cell array.
An implementation method according to the third aspect of the invention we, further, first program voltage is less than described
Second program voltage, and/or the first threshold is less than the Second Threshold.
An implementation method according to the third aspect of the invention we, further, first incremental voltage is more than described
Second incremental voltage.
An implementation method according to the third aspect of the invention we, further, the logic control element is additionally operable to
Based on the 3rd control signal that external device (ED) is provided, the storage device is set to the second write mode；And institute
In stating the second write mode, based on second control signal, according to the second program voltage, the second incremental voltage,
One calibration voltage and Second Threshold are programmed operation to the memory cell array；Wherein described first program voltage is small
The Second Threshold, and/or first increment electricity are less than in second program voltage, and/or the first threshold
Pressure is more than second incremental voltage.
An implementation method according to the third aspect of the invention we, further, the logic control element is additionally operable to
The time of making the product, operating mistake number of times, read operation number of times, write operation number of times, the erasing experienced according to the storage device
One or more in number of operations and integral age, the storage device is set to the second write mode；And
In second write mode, based on second control signal, according to two program voltages, the first calibration voltage and
Two threshold values are programmed operation to the memory cell array；Wherein described first program voltage is less than the described second programming
Voltage, and/or the first threshold is less than the Second Threshold.
An implementation method according to the third aspect of the invention we, further, the logic control element is according to default
First program voltage, the first incremental voltage, the first calibration voltage and first threshold are programmed operation to be included：By pre-
If the selected memory cell in the basic read-write cell of the first program voltage program storage；According to default first
Calibration voltage reads each memory cell in the basic read-write cell, obtains the first reading result；Based on described
One reading result determines the first quantity of the memory cell with correct dbjective state in the basic read-write cell；
If the first quantity of the memory cell with correct dbjective state is more than preset first threshold value, terminate write operation.
An implementation method according to the third aspect of the invention we, further, the logic control element is according to default
First program voltage, the first incremental voltage, the first calibration voltage and first threshold are programmed operation to be included：By pre-
If the selected memory cell in the basic read-write cell of the first program voltage program storage；According to default first
Calibration voltage reads each memory cell in the basic read-write cell, obtains the first reading result；Based on described
One reading result determines the first quantity of the memory cell with correct dbjective state in the basic read-write cell；
If the first quantity of the memory cell with correct dbjective state is not more than preset first threshold value, according to default first
Incremental voltage obtains the first increment write-in voltage, and writes the basic of voltage-programming storage device by first increment
Selected memory cell in read-write cell；Re-execute and memory cell operation read according to default first calibration voltage,
Until write operation terminates.
An implementation method according to the third aspect of the invention we, further, the logic control element is according to default
Second program voltage, the second incremental voltage, the first calibration voltage and Second Threshold are programmed operation to be included：Pass through
Selected memory cell in the basic read-write cell of default second program voltage program storage；By default the
One calibration voltage reads each memory cell in the basic read-write cell, obtains the second reading result；Based on described
Second reading result determines the second quantity of the memory cell with correct dbjective state in the basic read-write cell；
If the second quantity of the memory cell with correct dbjective state is more than default Second Threshold, terminate write operation.
An implementation method according to the third aspect of the invention we, further, the logic control element is according to default
Second program voltage, the second incremental voltage, the first calibration voltage and Second Threshold are programmed operation to be included：Pass through
Selected memory cell in the basic read-write cell of default second program voltage program storage；By default the
One calibration voltage reads each memory cell in the basic read-write cell, obtains the second reading result；Based on described
Second reading result determines the second quantity of the memory cell with correct dbjective state in the basic read-write cell；
If the second quantity of the memory cell with correct dbjective state is not more than default Second Threshold, increase according to default second
Amount voltage obtains the second increment write-in voltage, and the basic reading of voltage-programming storage device is write by second increment
Selected memory cell in r/w cell；Re-execute and memory cell operation read by default first calibration voltage,
Until write operation terminates.
According to the fourth aspect of the invention, there is provided a kind of storage control, including：
First module for obtaining the stage of the life cycle residing for storage device；
For when the stage correspondence first of the life cycle residing for the storage device stores write mode, indicating described
Storage device is programmed operation according to the first program voltage, the first calibration voltage and first threshold；When the storage dress
When the stage correspondence second for putting residing life cycle stores write mode, the storage device is indicated according to the second programming
Voltage, the second calibration voltage and Second Threshold are programmed the second unit of operation；
Wherein described first program voltage is less than second program voltage, and/or the first threshold is less than described second
Threshold value.
According to the fifth aspect of the invention, there is provided a kind of storage system, including：
Storage device and storage control according to the fourth aspect of the invention according to the third aspect of the invention we, it is described
Storage device is connected with the storage control.
By technical scheme, early stage the life cycle of storage device, error correcting capability is made full use of,
While ensureing the accuracy of data storage, " write-in " and " checking " number of times is reduced, shortens the time of write operation,
Time delay is reduced, so as to reduce infringement of the write operation to storage device, and then extends the service life of storage device.And,
The presence of the memory cell by allowing not being written correctly into, reduces the control accuracy requirement to programming and verification process,
Design is reduced with manufacture complexity.
Brief description of the drawings
Fig. 1 is the flow chart of the wiring method of the storage device that the embodiment of the present invention 1 is provided；
Fig. 2 is the flow chart of the wiring method of the storage device that the embodiment of the present invention 2 is provided；
Fig. 3 is the flow chart of the wiring method of the storage device that the embodiment of the present invention 3 is provided；
Fig. 4 is the flow chart of the wiring method of the storage device that the embodiment of the present invention 4 is provided；
Fig. 5 is the flow chart of the writing mode method to set up of the storage device that the embodiment of the present invention 5 is provided；
Fig. 6 is the flow chart of the writing mode method to set up of the storage device that the embodiment of the present invention 6 is provided；
Fig. 7 is the flow chart of the writing mode method to set up of the storage device that the embodiment of the present invention 7 is provided；
Fig. 8 is the flow chart of the writing mode method to set up of the storage device that the embodiment of the present invention 8 is provided；
Fig. 9 is the flow chart of the writing mode method to set up of the storage device that the embodiment of the present invention 9 is provided；
The flow chart of the writing mode method to set up of the storage device that Figure 10 embodiment of the present invention 10 is provided；
Figure 11 is the flow chart of the writing mode method to set up of the storage device that the embodiment of the present invention 11 is provided；
Figure 12 is the structural representation of the storage device that the embodiment of the present invention 12 is provided；
Figure 13 is the structural representation of the storage control that the embodiment of the present invention 13 is provided；
Figure 14 is the structural representation of the storage system that the embodiment of the present invention 14 is provided.
Specific embodiment
Specific embodiment of the invention is described below in conjunction with the accompanying drawings.
Embodiment 1
As shown in figure 1, the embodiment of the present invention provides a kind of wiring method of storage device.
Operation 101, by selected depositing in the basic read-write cell for presetting the first program voltage program storage
Storage unit.
In an embodiment according to the present invention, the basic read-write cell of storage device, be storage device it is minimum read,
Writing unit.The example of basic read-write cell can be " page ", its size can for 512 bytes, 2K bytes,
4K bytes, 8K bytes, 16K bytes etc., are not limited herein.
Operation 102, each memory cell in basic read-write cell is read according to default first calibration voltage, obtains the
One reads result.
In the present embodiment, the read-out voltage that operation 102 can be after obtain write operation corresponding to each memory cell
Value, obtains the first reading result.
Operation 103, the storage list with correct dbjective state in basic read-write cell is determined based on the first reading result
First quantity of unit.
Operation 104, if the first quantity of the memory cell with correct dbjective state is more than preset first threshold value,
Terminate write operation.
In the present embodiment, in operation 104 there be the error correcting capability of the storage control that first threshold is connected with storage device
Close.For example：N memory cell is included in basic read-write cell, when error correcting capability is m memory cell, as long as
The quantity of the memory cell being written correctly into is more than n-m-1, it is possible to correct the number read from the basic read-write cell
According to；Now, the span of first threshold T is n-m-1<T<n.
The first threshold can also set according to the instruction of the instruction of user, the status information of storage device, storage control
Put, be not limited herein.The quantity of the memory cell with correct dbjective state in basic read-write cell, full
In the case of the error correcting capability of sufficient storage control, the performance of error-correction operation is also affected.In some error correcting systems,
The lower error-correcting performance of more error unit correspondences.First threshold can be reasonably set, make entangling for storage control
Mistake operation is not significantly affected by performance during its reading data.
In an embodiment according to the present invention, storage device is nonvolatile storage, including but not limited to nand flash memory,
Phase transition storage, ferroelectric memory, Memister, magnetoresistive memory etc..
Embodiment 2
As shown in Fig. 2 the invention discloses a kind of wiring method of storage device.
Operation 201 is selected in the basic read-write cell by the first program voltage program storage to operation 204
Memory cell, according to default first calibration voltage obtain first read result；And determine result is read based on first
The memory cell with correct dbjective state the first quantity be more than preset first threshold value when, terminate write operation.Should
Process is similar to operation 104 to the operation 101 shown in Fig. 1, and this is no longer going to repeat them.
Operation 205, if the first quantity of the memory cell with correct dbjective state in basic read-write cell is not
More than preset first threshold value, the first increment write-in voltage is obtained according to default first incremental voltage, and first increased by this
Selected memory cell in the basic read-write cell of amount write-in voltage-programming storage device.
In the present embodiment, the first increment write-in voltage can be equal to the first incremental voltage and a preceding write operation is used
Voltage sum；After performing operation 205, this is obtained according to the first calibration voltage and reads result, the process and operation
202 is similar, until write operation terminates.
In the present embodiment, modification preset first threshold value, the first programming electricity can also be indicated according to the setting of user input
Pressure, the first incremental voltage and/or the first calibration voltage；Or according to default first threshold of the status information of storage device modification
Value, the first program voltage, the first incremental voltage and/or the first calibration voltage.
Embodiment 3
As shown in figure 3, the present embodiment provides a kind of wiring method of storage device.
Operation 301, judges to store write mode or the second storage write mode using first.
In the present embodiment, operation 301 can use first according to the writing commands for indicating different write modes, judgement
Storage write mode or the second storage write mode；Can also be indicated according to the selection of the write mode of user input,
Judge to store write mode or the second storage write mode using first；Can also according to the status information of storage device,
Judge to store write mode or the second storage write mode using first；The finger that can also be sent according to storage control
Show, judge to store write mode or the second storage write mode using first.Wherein, the status information of storage device,
Can include：It is the time of making the product, operating mistake number of times, read operation number of times, write operation number of times, erasing operation number of times, tired
One or more in the meter life-span.
In the present embodiment, storage medium life cycle initial stage, in order to make full use of the error correction of storage control
Ability, it is possible to use the first storage write mode is that operation 101 to the operation 104 shown in Fig. 1 performs write operation；
The use of the second storage write mode is that existing write mode performs write-in behaviour in the later stage of the life cycle of storage medium
Make.
If determine to store write mode using first by operation 301, operation 302 to operation 305 is performed.
Operation 302 is selected in the basic read-write cell by the first program voltage program storage to operation 305
Memory cell, according to default first calibration voltage obtain first read result；And determine result is read based on first
The memory cell with correct dbjective state the first quantity be more than preset first threshold value when, terminate write operation.Should
Process is similar to operation 104 to the operation 101 shown in Fig. 1, and this is no longer going to repeat them.
In the present embodiment, if being written of the quantity no more than preset first threshold value of memory cell, can also basis
Default first incremental voltage obtains increment write-in voltage, and after increment write-in voltage writes whole memory cell, again
Obtained by the first calibration voltage and read result.The process is similar to operation 205 to the operation 201 shown in Fig. 2,
This is no longer repeated one by one.
Embodiment 4
As shown in figure 4, the present embodiment provides a kind of wiring method of storage device.
Operation 401, judges to store write mode or the second storage write mode using first.The process and Fig. 3 institutes
The operation 301 shown is similar, and this is no longer going to repeat them.
In the present embodiment, in the present embodiment, storage medium life cycle initial stage, deposited to make full use of
Store up the error correcting capability of controller, it is possible to use the first storage write mode is operation 101 shown in Fig. 1 to operation 104
Perform write operation；The use of the second storage write mode is by operation 402 in the later stage of the life cycle of storage medium
Perform write operation.
Operation 402, by selected depositing in the basic read-write cell for presetting the second program voltage program storage
Storage unit.
In the present embodiment, the first program voltage and the second storage write mode that the first storage write mode is used are used
The second program voltage it is different, the first program voltage is less than the second program voltage, so as to be obtained in the second programming mode
More preferable programing effect, but infringement to storage medium is bigger..In another embodiment, the first storage write-in
The second program voltage that the first program voltage and the second storage write mode that pattern is used are used is identical, and is deposited first
In storage write mode and the second storage write mode, using different calibration voltages, so that the first storage write-in mould
The data error rate of programmed result is higher than the second storage write mode in formula.
Operation 403, each memory cell in basic read-write cell is read by presetting the first calibration voltage, obtains the
Two read result.
In the present embodiment, operation 403 could alternatively be and be read in basic read-write cell by default second calibration voltage
Each memory cell, second calibration voltage be more than the first calibration voltage.
Operation 404, the storage list with correct dbjective state in basic read-write cell is determined based on the second reading result
Second quantity of unit.
Operation 405, if the second quantity of the memory cell with correct dbjective state is more than default Second Threshold,
Terminate write operation.
In the present embodiment, Second Threshold stores the first threshold (referring to Fig. 3) in write mode more than first, from
And cause the data error rate of programmed result in the first storage write mode higher than the second storage write mode.According to this
In another embodiment of invention, first threshold is identical with Second Threshold, and the used in storing write mode first
One program voltage is less than the second program voltage, so as to the infringement to storage medium in the first storage write mode is smaller.
Operation 406, if the quantity of the memory cell with correct dbjective state is not more than default Second Threshold, according to
Default second incremental voltage obtains the second increment write-in voltage, and writes voltage-programming storage device by second increment
Basic read-write cell in selected memory cell.
In the present embodiment, the second increment write-in voltage can be equal to the second incremental voltage and a preceding write operation is used
Voltage sum；After performing operation 405, this is obtained according to the first calibration voltage and reads result, the process and operation
403 is similar, until write operation terminates.
The second program voltage in the present embodiment is more than the first program voltage, and/or Second Threshold is more than first threshold, and
/ or first incremental voltage be more than second incremental voltage.Small program voltage, make infringement to storage medium compared with
It is small, and program speed is fast；And big Second Threshold, the bit error rate can be reduced；Using larger incremental voltage, help
Number of times is programmed in reducing, but the infringement to storage medium may be increased
In the present embodiment, the default Second Threshold of modification, the second programming electricity can also be indicated according to the setting of user input
Pressure, the second incremental voltage and/or the second calibration voltage；Or according to default second threshold of the status information of storage device modification
Value, the second program voltage, the second incremental voltage and/or the second calibration voltage.
Embodiment 5
As shown in figure 5, the embodiment of the present invention provides a kind of writing mode method to set up of storage device, including：
Operation 501, obtains the stage of the life cycle residing for storage device.
In the present embodiment, life cycle phase that can be according to residing for various ways determine storage device.In an example
In son, the mistake that error checking and correction (Error Correcting Code, ECC) part according to read operation are provided
Number judges the stage of life cycle；The error number can pre-set with the corresponding relation in stage.In another example,
The time of making the product, operating mistake number of times, read operation number of times, write operation number of times, erasing operation number of times according to storage device,
Determine the life cycle residing for storage device one or more in integral age.
In the present embodiment, both only the stage of life cycle can be set to early and late；Can also be by Life Cycle
The stage of phase is set to first stage, second stage, phase III etc., is not limited herein；Each stage can set
Put the different storage write mode of correspondence.
Operation 502, when the stage correspondence first that storage device is in residing life cycle stores write mode, refers to
Show that storage device is programmed behaviour according to the first program voltage, the first incremental voltage, the first calibration voltage and first threshold
Make；When the life cycle residing for storage device stage correspondence second store write mode when, indicate storage device according to
Second program voltage, the second incremental voltage, the second calibration voltage and Second Threshold are programmed operation.
In the present embodiment, when the stage correspondence first of the life cycle residing for storage device stores write mode, refer to
Show that storage device enters row write behaviour according to default first program voltage, first the first calibration voltage of incremental voltage and first threshold
Make, the write operation process is similar to shown in Fig. 3, and this is no longer going to repeat them.When the Life Cycle residing for storage device
When the stage correspondence second of phase stores write mode, the process of the write operation is similar to shown in Fig. 4, not another herein
One repeats.
In the present embodiment, the first program voltage is less than the second program voltage, and/or first threshold is less than Second Threshold,
And/or first incremental voltage be more than the second incremental voltage.
In the present embodiment, the first calibration voltage can be identical with the second calibration voltage, and the first calibration voltage can also be small
In the second calibration voltage.
Embodiment 6
As shown in fig. 6, the embodiment of the present invention provides a kind of writing mode method to set up of storage device, including：
Operation 601, obtains the stage of the life cycle residing for storage device.The process and the operation 501 shown in Fig. 5
Similar, this is no longer going to repeat them.
Operation 602, when the stage correspondence first of the life cycle residing for storage device stores write mode, by pre-
If selected memory cell in the basic read-write cell of the first program voltage program storage；According to default first school
Electrical verification pressure reads each memory cell in basic read-write cell, obtains the first reading result；Result is read based on first
It is determined that the first quantity of the memory cell with correct dbjective state in basic read-write cell；If had correct
First quantity of the memory cell of dbjective state is more than preset first threshold value, terminates write operation.
In the present embodiment, the processes that are write of operation 602, with the operation 101 shown in Fig. 1 to operating 104 phases
Seemingly, this is no longer going to repeat them.
Embodiment 7
As shown in fig. 7, the embodiment of the present invention provides a kind of wiring method of storage device, including：
Operation 701, obtains the stage of the life cycle residing for storage device.The process and the operation 501 shown in Fig. 5
Similar, this is no longer going to repeat them.
Operation 702, when the stage correspondence first of the life cycle residing for storage device stores write mode, by pre-
If selected memory cell in the basic read-write cell of the first program voltage program storage；According to default first school
Electrical verification pressure reads each memory cell in basic read-write cell, obtains the first reading result；Result is read based on first
It is determined that the first quantity of the memory cell with correct dbjective state in basic read-write cell；If had correct
First quantity of the memory cell of dbjective state is not more than preset first threshold value, and the is obtained according to default first incremental voltage
One increment is write selected by voltage, and the basic read-write cell for passing through the first increment write-in voltage-programming storage device
Memory cell；Re-execute and memory cell operation is read according to default first calibration voltage, until write operation terminates.
In the present embodiment, the processes that are write of operation 702, with the operation 201 shown in Fig. 2 to operating 205 phases
Seemingly, this is no longer going to repeat them.
Embodiment 8
As shown in figure 8, the embodiment of the present invention provides a kind of writing mode method to set up of storage device.
Operation 801, obtains the stage of the life cycle residing for storage device.The process and the operation 501 shown in Fig. 5
Similar, this is no longer going to repeat them.
Operation 802, when the stage correspondence second of the life cycle residing for storage device stores write mode, by pre-
If the selected memory cell in the basic read-write cell of the second program voltage program storage；By presetting first
Calibration voltage reads each memory cell in basic read-write cell, obtains the second reading result；Knot is read based on second
Fruit determines the second quantity of the memory cell with correct dbjective state in basic read-write cell；If having correct mesh
Second quantity of the memory cell of mark state is more than default Second Threshold, terminates write operation.
In the present embodiment, the process of write operation is performed by operation 802, with the operation 402 shown in Fig. 4 to operation
406 is similar, and this is no longer going to repeat them.
Embodiment 9
As shown in figure 9, the embodiment of the present invention provides a kind of writing mode method to set up of storage device.
Operation 901, obtains the stage of the life cycle residing for storage device.The process and the operation 501 shown in Fig. 5
Similar, this is no longer going to repeat them.
Operation 902, when the stage correspondence second of the life cycle residing for storage device stores write mode, by pre-
If the selected memory cell in the basic read-write cell of the second program voltage program storage；By presetting first
Calibration voltage reads each memory cell in basic read-write cell, obtains the second reading result；Knot is read based on second
Fruit determines the second quantity of the memory cell with correct dbjective state in basic read-write cell；If having correct mesh
Second quantity of the memory cell of mark state is not more than default Second Threshold, and second is obtained according to default second incremental voltage
Increment is write selected by voltage, and the basic read-write cell for passing through second increment write-in voltage-programming storage device
The memory cell selected；Re-execute and memory cell operation is read by default first calibration voltage, until write operation terminates.
In the present embodiment, the process of write operation is performed by operation 902, with the operation 402 shown in Fig. 4 to operation
406 is similar, and this is no longer going to repeat them.
Embodiment 10
As shown in Figure 10, the embodiment of the present invention provides a kind of writing mode method to set up of storage device.
Operation 1001 obtains the stage of the life cycle residing for storage device to operation 1002.And according to storage device
The stage of residing life cycle performs corresponding write operation.The process and the operation 501 shown in Fig. 5 to operation 502
Similar, this is no longer going to repeat them.
Operation 1003, when the stage correspondence first of the life cycle residing for storage device stores write mode, will store
Device is set to the first storage write mode；And when the stage correspondence second of the life cycle residing for storage device is stored
During write mode, storage device is set to the second storage write mode.
Embodiment 11
As shown in figure 11, the embodiment of the present invention provides a kind of writing mode method to set up of storage device.
Operation 1101 obtains the stage of the life cycle residing for storage device to operation 1102.And according to storage device
The stage of residing life cycle performs corresponding write operation.The process and the operation 501 shown in Fig. 5 to operation 502
Similar, this is no longer going to repeat them.
Operation 1103, indicates storage device to set the first program voltage, the second program voltage, the first calibration voltage, the
One or more in two calibration voltages, the first incremental voltage, the second incremental voltage, first threshold and Second Threshold.
In the present embodiment, can indicate to set before write operation is performed every time, it is also possible to performing write operation process
It is middle to indicate to set.
Embodiment 12
As shown in figure 12, the embodiment of the present invention provides a kind of storage device, including：
Memory cell array 1201, input and output control unit 1202 and logic control comprising at least one memory cell
Unit processed 1203；
Wherein, memory cell array, for data storage；
Input and output control unit, for carrying out data exchange between memory cell array and external device (ED)；
Logic control element, for the first control signal provided based on external device (ED), according to the first program voltage,
One incremental voltage, the first calibration voltage and first threshold are programmed operation to memory cell array.
In the present embodiment, realize writing by memory cell array, input and output control unit and logic control element
Process, to the embodiment of the present invention 1 provide it is similar, this is no longer going to repeat them.
Further, logic control element provided in an embodiment of the present invention, is additionally operable to second provided based on external device (ED)
Control signal, according to the second program voltage, the second incremental voltage, the first calibration voltage and Second Threshold to memory cell
Array is programmed operation；Wherein the first program voltage is less than the second program voltage, and/or first threshold is less than the second threshold
Value；First incremental voltage is more than the second incremental voltage.
Logic control element, is additionally operable to the 3rd control signal provided based on external device (ED), and the storage device is set
It is the second write mode；And in second write mode, based on second control signal, compiled according to second
Journey voltage, the second incremental voltage, the first calibration voltage and Second Threshold are programmed operation to the memory cell array；
Wherein the first program voltage is less than the second program voltage, and/or first threshold is less than Second Threshold.
The logic control element, is additionally operable to the time of making the product, operating mistake number of times, the reading experienced according to the storage device
One or more in number of operations, write operation number of times, erasing operation number of times and integral age, by the storage device
It is set to the second write mode；And in second write mode, based on second control signal, according to two
Program voltage, the first calibration voltage and Second Threshold are programmed operation to the memory cell array；
Wherein the first program voltage is less than the second program voltage, and/or first threshold is less than Second Threshold.
Said process is similar to what the embodiment of the present invention 2 to 4 was provided, and this is no longer going to repeat them.
In the present embodiment, logic control element is according to default first program voltage, the first incremental voltage, the first verification
Voltage and first threshold are programmed operation to be included：By the basic read-write for presetting the first program voltage program storage
Selected memory cell in unit；Each storage in basic read-write cell is read according to default first calibration voltage
Unit, obtains the first reading result；Based on first reading result determine in basic read-write cell with correct target
First quantity of the memory cell of state；If the first quantity of the memory cell with correct dbjective state is more than pre-
If first threshold, terminate write operation.
In the present embodiment, logic control element is according to default first program voltage, the first incremental voltage, the first verification
Voltage and first threshold are programmed operation to be included：By the basic read-write for presetting the first program voltage program storage
Selected memory cell in unit；Each storage in basic read-write cell is read according to default first calibration voltage
Unit, obtains the first reading result；Based on first reading result determine in basic read-write cell with correct target
First quantity of the memory cell of state；If the first quantity of the memory cell with correct dbjective state is not more than
Preset first threshold value, obtains the first increment write-in voltage, and write by the first increment according to default first incremental voltage
Selected memory cell in the basic read-write cell of voltage-programming storage device；Re-execute according to default first school
Electrical verification pressure reads memory cell operation, until write operation terminates.
In the present embodiment, logic control element is according to default second program voltage, the second incremental voltage, the first verification
Voltage and Second Threshold are programmed operation to be included：By the basic reading for presetting the second program voltage program storage
Selected memory cell in r/w cell；Deposited by each in the basic read-write cell of default first calibration voltage reading
Storage unit, obtains the second reading result；Determine that there is correct target in basic read-write cell based on the second reading result
Second quantity of the memory cell of state；If the second quantity of the memory cell with correct dbjective state is more than default
Second Threshold, terminates write operation.
Logic control element is according to default second program voltage, the second incremental voltage, the first calibration voltage and the second threshold
Value is programmed operation to be included：Selected by the basic read-write cell for presetting the second program voltage program storage
The memory cell selected；Each memory cell in basic read-write cell is read by presetting the first calibration voltage, the is obtained
Two read result；Memory cell with correct dbjective state in basic read-write cell is determined based on the second reading result
The second quantity；If the second quantity of the memory cell with correct dbjective state is not more than default Second Threshold, root
The second increment write-in voltage is obtained according to default second incremental voltage, and voltage-programming storage device is write by the second increment
Basic read-write cell in selected memory cell；Re-execute and storage list is read by default first calibration voltage
Atom operation, until write operation terminates.
Embodiment 13
As shown in figure 13, the embodiment of the present invention provides a kind of storage control, including：
First module 1301 for obtaining the stage of the life cycle residing for storage device；
For when the stage correspondence first of the life cycle residing for storage device stores write mode, indicating storage device
Operation is programmed according to the first program voltage, the first calibration voltage and first threshold；When the life residing for storage device
When the stage correspondence second in cycle stores write mode, storage device is indicated according to the second program voltage, the second verification electricity
Pressure and Second Threshold are programmed the second unit 1302 of operation；
Wherein the first program voltage is less than the second program voltage, and/or first threshold is less than Second Threshold.
In the present embodiment, the process of storage control is realized by first module and second unit, with the embodiment of the present invention
5 processes for providing are similar, and this is no longer going to repeat them.
Embodiment 14
As shown in figure 14, the embodiment of the present invention provides a kind of storage system, including：
Storage device 1401 and storage control 1402, storage device is connected with storage control；
In the present embodiment, the structure of storage device and storage control, and by storage device and storage control
The process of write-in is realized, similar to what the embodiment of the present invention 12 and 13 was provided, this is no longer going to repeat them.
In the field that teaching involved by these implementation methods, presenting from the description above and in associated accompanying drawing benefits
Technical staff will be recognized that the of the invention many modifications and other embodiment recorded here.It should therefore be understood that
The invention is not restricted to disclosed specific embodiment, it is intended to which modification and other embodiment are included in appended claims
In the range of book.Although employing specific term herein, it is used only on general significance and describing significance
And not in order to limitation purpose and use.
Claims (10)
1. a kind of wiring method of storage device, it is characterised in that including：
First operation (S10)：By the institute in the basic read-write cell for presetting the first program voltage program storage
The memory cell of selection；
Second operation (S20)：Each storage in the basic read-write cell is read according to default first calibration voltage
Unit, obtains the first reading result；
3rd operation (S30)：Based on described first reading result determine in the basic read-write cell with correct
Dbjective state memory cell the first quantity；
4th operation (S40)：If the first quantity of the memory cell with correct dbjective state is more than default the
One threshold value, terminates write operation.
2. the wiring method of storage device according to claim 1, it is characterised in that if the basic read-write
First quantity of the memory cell with correct dbjective state in unit is not more than preset first threshold value, methods described
Also include：
5th operation (S50)：First increment write-in voltage is obtained according to default first incremental voltage, and by described
Selected memory cell in the basic read-write cell of the first increment write-in voltage-programming storage device；
Second operation (S20) is re-executed, until write operation terminates.
3. the wiring method of storage device according to claim 1 and 2, it is characterised in that in the described first behaviour
Before making (S10), also include：
Judge operation (S00)：Judge to store write mode or the second storage write mode using first；
Write mode is stored if using first, first operation (S10) is performed.
4. the wiring method of storage device according to claim 3, it is characterised in that if the judged result
It is, using the second storage write mode, also to include：
6th operation (S60)：By the institute in the basic read-write cell for presetting the second program voltage program storage
The memory cell of selection；
7th operation (S70)：By presetting each storage in the first calibration voltage reading basic read-write cell
Unit, obtains the second reading result；
8th operation (S80)：Determine have correctly in the basic read-write cell based on the described second reading result
Second quantity of the memory cell of dbjective state；
9th operation (S90)：If the second quantity of the memory cell with correct dbjective state is more than default second
Threshold value, terminates write operation；
Tenth operation (S100)：If the quantity of the memory cell with correct dbjective state is not more than default second threshold
Value, obtains the second increment write-in voltage, and writes voltage by second increment and compile according to default second incremental voltage
Selected memory cell in the basic read-write cell of journey storage device；
The 7th operation (S70) is re-executed, until write operation terminates；
Wherein described second program voltage is more than first program voltage, and/or the Second Threshold is more than described first
Threshold value, and/or first incremental voltage is more than second incremental voltage.
5. the wiring method of the storage device according to any one in claim 3-4, it is characterised in that described
Judge that operation (S00) includes：
According to the writing commands for indicating different write modes, judge to be write using the first storage write mode or the second storage
Enter pattern；Or,
The selection of the write mode according to user input is indicated, and judges to store write mode or the second storage using first
Write mode；Or,
According to the status information of the storage device, judge to store write mode or the second storage write-in mould using first
Formula；Or,
According to the instruction that default storage control sends, judge to store write mode or the second storage write-in using first
Pattern.
6. the wiring method of the storage device according to any one in claim 1-4, it is characterised in that also wrap
Include：
Modification operation (S21)：Setting according to user input indicate modification preset first threshold value, the first program voltage,
First incremental voltage and/or the first calibration voltage；Or according to the status information of storage device change preset first threshold value,
First program voltage, the first incremental voltage and/or the first calibration voltage.
7. the wiring method of the storage device according to any one in claim 4-6, it is characterised in that also wrap
Include：
Modification operation (S22)：Setting according to user input indicate the default Second Threshold of modification, the second program voltage,
Second incremental voltage and/or the second calibration voltage；Or according to the default Second Threshold of the status information of storage device modification,
Second program voltage, the second incremental voltage and/or the second calibration voltage.
8. a kind of wiring method of storage device, it is characterised in that including：
First operation (S01)：Obtain the stage of the life cycle residing for storage device；
Second operation (S02)：When stage correspondence the first storage write-in mould of the life cycle residing for the storage device
During formula, the storage device is indicated according to the first program voltage, the first incremental voltage, the first calibration voltage and the first threshold
Value is programmed operation；When the stage correspondence second of the life cycle residing for the storage device stores write mode,
The storage device is indicated to be entered according to the second program voltage, the second incremental voltage, the second calibration voltage and Second Threshold
Row programming operation.
9. a kind of storage device, it is characterised in that including：
Memory cell array, input and output control unit and logic control element comprising at least one memory cell；
The memory cell array, for data storage；
The input and output control unit, for carrying out data exchange between memory cell array and external device (ED)；
The logic control element, for the first control signal provided based on external device (ED), according to the first program voltage,
First incremental voltage, the first calibration voltage and first threshold are programmed operation to the memory cell array.
10. storage device according to claim 9, it is characterised in that：
The logic control element, is additionally operable to the second control signal provided based on external device (ED), according to the second programming electricity
Pressure, the second incremental voltage, the first calibration voltage and Second Threshold are programmed operation to the memory cell array.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510974008 | 2015-12-22 | ||
| CN2015109740082 | 2015-12-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106910520A true CN106910520A (en) | 2017-06-30 |
| CN106910520B CN106910520B (en) | 2021-05-28 |
Family
ID=59207013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610048582.XA Active CN106910520B (en) | 2015-12-22 | 2016-01-25 | Writing method of storage device, storage controller and storage system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106910520B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107766008A (en) * | 2017-12-05 | 2018-03-06 | 珠海格力电器股份有限公司 | Prevent the method, apparatus and electronic equipment that storage medium writes extremely |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120060056A1 (en) * | 2010-09-06 | 2012-03-08 | Hynix Semiconductor Inc. | Semiconductor memory device and method of operating the same |
| CN102483953A (en) * | 2009-06-26 | 2012-05-30 | 桑迪士克技术有限公司 | Detecting the completion of programming for non-volatile storage |
| CN102754164A (en) * | 2009-12-15 | 2012-10-24 | 桑迪士克科技股份有限公司 | Programming non-volatile storage with fast bit detection and verify skip |
| US20130094294A1 (en) * | 2011-10-13 | 2013-04-18 | Donghun Kwak | Nonvolatile memory device, programming method of nonvolatile memory device and memory system including nonvolatile memory device |
-
2016
- 2016-01-25 CN CN201610048582.XA patent/CN106910520B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102483953A (en) * | 2009-06-26 | 2012-05-30 | 桑迪士克技术有限公司 | Detecting the completion of programming for non-volatile storage |
| CN102754164A (en) * | 2009-12-15 | 2012-10-24 | 桑迪士克科技股份有限公司 | Programming non-volatile storage with fast bit detection and verify skip |
| US20120060056A1 (en) * | 2010-09-06 | 2012-03-08 | Hynix Semiconductor Inc. | Semiconductor memory device and method of operating the same |
| US20130094294A1 (en) * | 2011-10-13 | 2013-04-18 | Donghun Kwak | Nonvolatile memory device, programming method of nonvolatile memory device and memory system including nonvolatile memory device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107766008A (en) * | 2017-12-05 | 2018-03-06 | 珠海格力电器股份有限公司 | Prevent the method, apparatus and electronic equipment that storage medium writes extremely |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106910520B (en) | 2021-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5984989B2 (en) | On-chip NAND flash memory and its defective block management method | |
| CN1905070B (en) | Flash memory device capable of storing multi-bit data and single-bit data | |
| JP4280739B2 (en) | How to access memory | |
| CN106448733B (en) | Nonvolatile memory device, program method, and program verification method thereof | |
| CN102132354B (en) | The fast, low-power reading of the data in flash memory | |
| US9213631B2 (en) | Data processing method, and memory controller and memory storage device using the same | |
| KR20140072118A (en) | Flash memory system | |
| CN110400588A (en) | The operating method of memory device and the memory device | |
| CN105913872B (en) | Storage system | |
| CN109815160A (en) | It is ultimately written page search | |
| CN108735253A (en) | non-volatile memory storage system | |
| CN106373610A (en) | Semiconductor memory device and operating method thereof | |
| TW201346918A (en) | System and method of determining a programming step size for a word line of a memory | |
| CN104765569A (en) | Data write-in method, memory control circuit unit and memory storing device | |
| CN107958687B (en) | Memory programming method, memory control circuit unit and memory device thereof | |
| CN109542394A (en) | Controller, semiconductor memory system and the storage system with them | |
| CN104969198B (en) | Memory device and the method for verifying data path integrality | |
| CN105989883B (en) | Memory programming method, memory storage apparatus and memorizer control circuit unit | |
| CN106910520A (en) | The wiring method of storage device, storage device, storage control and storage system | |
| CN115470052B (en) | Bad block detection method and device for memory chip and memory medium | |
| CN110473584B (en) | Method for re-verifying erased block in solid state storage device | |
| JP4936271B2 (en) | Semiconductor memory device | |
| US10181356B2 (en) | Flash memory counter | |
| JP2009032313A (en) | Nonvolatile semiconductor storage device, and test method of nonvolatile semiconductor storage device | |
| US10777240B1 (en) | Efficient control of memory core circuits |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| EC01 | Cancellation of recordation of patent licensing contract |
Assignee: BEIJING MEMBLAZE TECHNOLOGY Co.,Ltd. Assignor: Shanghai Pleiades Microelectronics Co.,Ltd. Contract record no.: 2016110000016 Date of cancellation: 20211026 |
|
| EC01 | Cancellation of recordation of patent licensing contract |