CN106905624A - A kind of quantum dot film of water oxygen obstructing capacity high and preparation method thereof - Google Patents

A kind of quantum dot film of water oxygen obstructing capacity high and preparation method thereof Download PDF

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CN106905624A
CN106905624A CN201710167714.5A CN201710167714A CN106905624A CN 106905624 A CN106905624 A CN 106905624A CN 201710167714 A CN201710167714 A CN 201710167714A CN 106905624 A CN106905624 A CN 106905624A
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quantum dot
water oxygen
layer
dot film
film
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CN106905624B (en
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陈凯武
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Xiamen Bohr Technology Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • C08L23/02Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L23/18Homopolymers or copolymers of hydrocarbons having four or more carbon atoms
    • C08L23/20Homopolymers or copolymers of hydrocarbons having four or more carbon atoms having four to nine carbon atoms
    • C08L23/22Copolymers of isobutene; Butyl rubber ; Homo- or copolymers of other iso-olefins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/04Oxygen-containing compounds
    • C08K5/09Carboxylic acids; Metal salts thereof; Anhydrides thereof
    • C08K5/098Metal salts of carboxylic acids
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/04Oxygen-containing compounds
    • C08K5/10Esters; Ether-esters
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/16Nitrogen-containing compounds
    • C08K5/20Carboxylic acid amides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/49Phosphorus-containing compounds
    • C08K5/51Phosphorus bound to oxygen
    • C08K5/52Phosphorus bound to oxygen only
    • C08K5/521Esters of phosphoric acids, e.g. of H3PO4
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L75/00Compositions of polyureas or polyurethanes; Compositions of derivatives of such polymers
    • C08L75/04Polyurethanes
    • C08L75/06Polyurethanes from polyesters
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/02Diffusing elements; Afocal elements
    • G02B5/0205Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/0236Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element
    • G02B5/0242Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element by means of dispersed particles
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00Applications
    • C08L2203/16Applications used for films
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/24Crystallisation aids

Abstract

The present invention provides a kind of quantum dot film of water oxygen obstructing capacity high and preparation method thereof, the quantum dot film of water oxygen obstructing capacity wherein high includes quantum dot layer and water oxygen barrier layer, the water oxygen barrier layer is arranged on the upper and lower surface of the quantum dot layer, and the quantum dot layer includes:Quantum dot, diffusion particle, linear resin, nucleator and coalescents.The quantum dot film of the water oxygen barrier high that the present invention is provided, can effectively prevent vapor and oxygen from the end face of quantum dot film into quantum dot film inside the quantum dot inside quantum dot film is damaged, with water oxygen obstructing capacity is high, long service life, constitutionally stable advantage, and low production cost, it is adaptable to large batch of production.

Description

A kind of quantum dot film of water oxygen obstructing capacity high and preparation method thereof
Technical field
The present invention relates to quantum dot film field, the quantum dot film of more particularly to a kind of water oxygen obstructing capacity high and its preparation side Method.
Background technology
Quantum dot film is used in the middle of LCD backlight module, and the colour gamut of liquid crystal display can be made to bring up to 100% More than NTSC.Quantum dot has the characteristics of to vapor and oxygen sensitive, so that quantum dot and external environment are completely cut off.
General method is the upper and lower surface one layer of water oxygen barrier layer of each setting in quantum dot film, but the end of quantum dot film Face causes vapor and oxygen to enter inside quantum dot film from the end face of quantum dot film but without barrier layer, and quantum dot is caused Destruction, makes the quantum dot fluorescence strength retrogression of film edge part, and the color of film edge part changes.
In order to solve the above problems, quantum dot is scattered in the middle of the resin with water oxygen barrier properties and is made thin by people Film, patent CN104459845, date of publication is on 03 25th, 2015, discloses a kind of quantum dot light diffusion barrier, and it is used will measure Son point is dispersed in the method in polyvinylidene chloride to improve barrier property of the quantum dot film end face to water oxygen.However, this side The shortcoming of method is:(1) quantum dot needs to mix with the polyvinylidene chloride of molten condition, and the melt temperature of polyvinylidene chloride It is very high, generally 198 DEG C~205 DEG C, at these elevated temperatures quantum dot be easy to and water oxygen reaction;(2) polyvinylidene chloride It is expensive.In addition to polyvinylidene chloride, other such as ethylene vinyl alcohol copolymers of the resin with water oxygen barrier properties Thing, polyamide, polyimides etc. are equally difficult to be dissolved in organic solvent, it is impossible to using the method masking of coating resin solution, and only The method masking of melting extrusion can be used, quantum dot is easy to and water oxygen is reacted at high temperature.
Patent CN 106257697, date of publication is on December 28th, 2016, a kind of quantum dot film is disclosed, using cured layer Water oxygen barrier layer is encapsulated to strengthen the water oxygen barrier of quantum dot film, there is complex structure, preparation technology is cumbersome, and prepare The shortcomings of quantum dot film thickness is thicker.
The content of the invention
To solve to mention problem in background above technology, the present invention provide a kind of water oxygen obstructing capacity high quantum dot film and Its preparation method, wherein, a kind of quantum dot film of water oxygen obstructing capacity high, including quantum dot layer and water oxygen barrier layer, the water Oxygen barrier layer is arranged on the upper and lower surface of the quantum dot layer, and the quantum dot layer includes:Quantum dot, diffusion particle, linear tree Fat, nucleator and coalescents.
Further, the quantum dot layer includes the raw material of following weight:
Further, the linear resin include the linear polyolefin of crystallinity or hemicrystalline, linear polyether dihydroxylic alcohols, One or more in linear polyester dihydroxylic alcohols, linear diisocyanate, linear polyester, linear polyureas.
Further, the nucleator includes organic carboxylate, organic phosphate, disproportionated rosin salt, aromatic amides One or more in compound, aliphatic or aromatic carboxylic acid esters' compound, polyethylene glycol.
Further, the coalescents include in levelling agent, substrate wetting agents, crosslinking accelerator, organic solvent Plant or various.
Further, the diffusion particle includes one or more in organic filler, inorganic particulate.
Further, the diffusion particle is polymethyl methacrylate particle or organic silicon particle.
The preparation method of the quantum dot film of a kind of as above any described water oxygen obstructing capacity high, including following preparation walks Suddenly:
S010, at room temperature, quantum dot, diffusion particle, linear resin, nucleator and coalescents is uniformly mixed, shape Into liquefied mixture;
S020, the liquefied mixture in S010 steps is coated on mould release membrance surface, is then heated at 80 DEG C~110 DEG C 5min~30min, makes liquefied mixture be solidified into quantum dot film, then just obtains quantum dot layer after mould release membrance is removed;
S030, by S020 steps prepare quantum dot layer be heated to 110 DEG C~150 DEG C and quantum dot layer carried out unidirectionally Stretching;
S040, after carrying out simple tension the upper and lower surface of quantum dot layer respectively laminating one layer of water oxygen barrier layer after, that is, obtain The quantum dot film of water oxygen obstructing capacity high.
The quantum dot film of the water oxygen barrier high that the present invention is provided, the overall density of quantum dot layer is larger, can effectively prevent Sealing steam and oxygen from the end face of quantum dot film into quantum dot film inside the quantum dot inside quantum dot film is damaged, With long service life, constitutionally stable advantage, and low production cost, it is adaptable to produce in enormous quantities.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are this hairs Some bright embodiments, for those of ordinary skill in the art, without having to pay creative labor, can be with Other accompanying drawings are obtained according to these accompanying drawings.
The quantum dot membrane structure schematic diagram of the water oxygen obstructing capacity high that Fig. 1 is provided for the present invention.
Reference:
The quantum dot of 10 water oxygen barrier layer, 20 quantum dot layer 21
22 diffusion particles
Specific embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is A part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art The every other embodiment obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
A kind of quantum dot film of water oxygen obstructing capacity high, including quantum dot layer and water oxygen barrier layer, the water oxygen barrier layer The upper and lower surface of the quantum dot layer is arranged on, the quantum dot layer includes:Quantum dot, diffusion particle, linear resin, nucleation Agent and coalescents.
Preferably, the quantum dot layer includes the raw material of following weight:
Preferably, the linear resin includes linear polyolefin, linear polyether dihydroxylic alcohols, the line of crystallinity or hemicrystalline One or more in property polyester diol, linear diisocyanate, linear polyester, linear polyureas.According to specifically used Linear resin, can selectively increase and use curing agent, for example, using linear polyether dihydroxylic alcohols, linear polyester dihydroxylic alcohols, line Property the liquid such as polyureas and can increase during the less linear resin of molecular weight and use curing agent, the curing agent for being used is linear two different Cyanate, such as hexamethylene diisocyanate, linear diisocyanate can be reacted with linear resin, big point of generation Son, is conducive to carrying out film forming curing reaction.
Preferably, the nucleator includes organic carboxylate, organic phosphate, disproportionated rosin salt, aromatic amides chemical combination One or more in thing, aliphatic or aromatic carboxylic acid ester compound, polyethylene glycol.
Preferably, the coalescents include the one kind in levelling agent, substrate wetting agents, crosslinking accelerator, organic solvent Or it is various.Specifically, the organic solvent can have for hexamethylene, methyl iso-butyl ketone (MIBK), toluene, butyl acetate, dimethylbenzene etc. One or more in machine solvent.
Preferably, the diffusion particle includes one or more in organic filler, inorganic particulate.
Preferably, the diffusion particle includes polymethyl methacrylate particle or organic silicon particle, contributes to light in amount The diffusion inside of son point film, can further improve the optical effect of quantum dot film.
The preparation method of the quantum dot film of a kind of as above any described water oxygen obstructing capacity a kind of high, including following preparation Step:
S010, quantum dot, diffusion particle, linear resin and coalescents are uniformly mixed at room temperature, form liquid and mix Compound;
S020, the liquefied mixture in S010 steps is coated on mould release membrance surface, then heats 5min~30min, made Solvent is volatilized or small molecule is reacted generation macromolecular, and liquefied mixture is solidified into quantum dot film, and mould release membrance is removed Quantum dot layer is just obtained afterwards;
S030, by S020 steps prepare quantum dot layer be heated to 110 DEG C~150 DEG C and quantum dot layer carried out unidirectionally Stretching;
S040, after carrying out simple tension the upper and lower surface of quantum dot layer respectively laminating one layer of water oxygen barrier layer after, that is, obtain The quantum dot film of water oxygen obstructing capacity high.
The quantum dot membrane structure of the water oxygen obstructing capacity high for preparing as shown in figure 1, wherein, the amount of being attached to of water oxygen barrier layer 10 The upper and lower surface of son point layer 20, includes quantum dot 21 and diffusion particle 22 inside quantum dot layer.
The quantum dot film of water oxygen obstructing capacity high that the present invention is provided proposed first, and quantum dot is scattered in into crystallinity or half Crystalline linear resin is central and is made film, because the linear resin of crystallinity or hemicrystalline has (1) strand Cheng Zhi Chain, it is easy to close-packed arrays;(2) molecule chain rigidity is not high, does not have huge side base, and steric hindrance is small, and strand is be easily moved The characteristics of.After linear resin film forming after the part as quantum dot layer, now linear resin molecule is still within amorphous state, Quantum dot layer is heated to more than the glass transition temperature of resin, below melt temperature, the now volumetric expansion of linear resin, Strand has enough kinergety and the free space to carry out the adjustment of Molecular connectivity indices, and strand is uniform in quantum dot layer The nucleator of distribution is that lattice-site generation initial orientation is arranged in crystallite, and this phenomenon is that heterogeneous nucleation is crystallized.Wherein, meeting is crystallized The transparency of quantum dot film is being influenceed to a certain degree, and the nucleator of addition can not only improve the crystalline rate of linear resin, also The size of spherocrystal in resin can be reduced so that linear resin remains to keep the high grade of transparency after crystallizing, and does not interfere with liquid Light in brilliant backlight module makes the optical effect of quantum dot film be guaranteed by quantum dot film.
Meanwhile, in the preparation technology of quantum dot film, direction that simple tension makes the strand of resin is carried out to film again Orderly structure is arranged in, this phenomenon contributes to the homogeneous nucleation of resin to crystallize.
Under the collective effect of above two principle, the crystalline rate of linear resin molecule is greatly improved.Resin crystallization with Afterwards, because strand makees regular tightly packed, the free volume of resin reduces, density increase, and then makes quantum dot layer entirety Density increases, and vapor and oxygen molecule are difficult to pass through, even if the end face of quantum dot film is not covered with water oxygen barrier layer and can also prevent Sealing steam and oxygen molecule enter the inside of quantum dot film, so as to play the protective effect to quantum dot.
The quantum dot film of the water oxygen obstructing capacity high that the present invention is provided avoids high temperature preparation method of the prior art, prevents Destruction of the water oxygen to quantum dot in preparation process is stopped, there is the quantum dot film of the water oxygen obstructing capacity high being prepared into water oxygen to hinder Every property is high, long service life, constitutionally stable advantage.In addition, the method avoids using prior art conventional and expensive Polyvinylidene chloride, has the advantages that preparation cost is relatively low.
The present invention provides following examples:
Embodiment 1,
At room temperature, by 0.6 part of green quantum dot, 0.06 part of red quantum dot, 27 parts of diffusion particle, 10 parts Linear polyisobutene, 0.03 part of polyethylene glycol nucleator, 0.3 part of levelling agent, 20 parts of hexamethylene are well mixed to form liquid State mixture;
The liquefied mixture of preparation is coated on mould release membrance surface, 5min is heated at 80 DEG C~90 DEG C waves hexamethylene Hair, makes liquefied mixture be solidified into quantum dot film, then after mould release membrance is removed, that is, obtains quantum dot layer;
The quantum dot layer that will be obtained carries out simple tension at 110 DEG C, the upper and lower surface of the quantum dot layer after stretched Respectively after one layer of water oxygen barrier layer of laminating, that is, obtain the quantum dot film of water oxygen obstructing capacity high.
Embodiment 2,
At room temperature, by 1.1 parts of green quantum dot, 0.1 part of red quantum dot, 10 parts of diffusion particle, 20 parts Linear syndiotactic polystyrene, 0.05 part of organic phosphate nucleating agent, 40 parts of methyl iso-butyl ketone (MIBK), 0.1 part of levelling Agent is well mixed to form liquefied mixture;
The liquefied mixture of preparation is coated on mould release membrance surface, 10min is heated at 90 DEG C~100 DEG C makes methyl tert-butyl After the volatilization of base ketone, liquefied mixture is solidified into quantum dot film, then after mould release membrance is removed, that is, obtain quantum dot layer;
The quantum dot layer that will be obtained carries out simple tension at 120 DEG C, the upper and lower surface of the quantum dot layer after stretched Respectively after one layer of water oxygen barrier layer of laminating, that is, obtain the quantum dot film of water oxygen obstructing capacity high.
Embodiment 3,
At room temperature, by 1.5 parts of green quantum dot, 0.14 part of red quantum dot, 15 parts of diffusion particle, 40 parts Linear polyester dihydroxylic alcohols, 5 parts of hexamethylene diisocyanate, 0.1 part of disproportionated rosin salt nucleator, 0.06 part of crosslinking promote Enter agent, 20 parts of toluene and be formed uniformly liquefied mixture
The liquefied mixture of preparation is coated on mould release membrance surface, 15min is heated at 100 DEG C~110 DEG C waves toluene After sending out and making resin solidification film forming, after mould release membrance is removed, that is, quantum dot layer is obtained;
The quantum dot layer that will be obtained carries out simple tension at 130 DEG C, the upper and lower surface of the quantum dot layer after stretched Respectively after one layer of water oxygen barrier layer of laminating, that is, obtain the quantum dot film of water oxygen obstructing capacity high.
Embodiment 4,
At room temperature, by 2 parts of green quantum dot, 0.2 part of red quantum dot, 16 parts of diffusion particle, 45 parts of line Property polyurethane, 0.13 part of aromatic amides compound nucleartion agent, 0.1 part of substrate wetting agents, 50 parts butyl acetate mixing It is formed uniformly liquefied mixture;
The liquefied mixture of preparation is coated on mould release membrance surface, 20min is heated at 90 DEG C~100 DEG C makes butyl acetate After volatilization, liquefied mixture is solidified into quantum dot film, then after mould release membrance is removed, that is, obtain quantum dot layer;
The quantum dot layer that will be obtained carries out simple tension at 135 DEG C, the upper and lower surface of the quantum dot layer after stretched Respectively after one layer of water oxygen barrier layer of laminating, that is, obtain the quantum dot film of water oxygen obstructing capacity high.
Embodiment 5,
At room temperature, by 2.5 parts of green quantum dot, 0.25 part of red quantum dot, 19 parts of diffusion particle, 30 parts Linear polyether dihydroxylic alcohols, 30 parts of linear polyester dihydroxylic alcohols, 9 parts of hexamethylene diisocyanate, 0.17 part of aromatic series carboxylic Acid esters compound nucleator, 0.08 part of crosslinking accelerator, 25 parts of dimethylbenzene are well mixed to form liquefied mixture;
The liquefied mixture of preparation is coated on mould release membrance surface, 25min is heated at 100 DEG C~110 DEG C makes dimethylbenzene After volatilizing and making resin solidification film forming, after mould release membrance is removed, that is, quantum dot layer is obtained;
The quantum dot layer that will be obtained carries out simple tension at 140 DEG C, the upper and lower surface of the quantum dot layer after stretched Respectively after one layer of water oxygen barrier layer of laminating, that is, obtain the quantum dot film of water oxygen obstructing capacity high.
Embodiment 6,
At room temperature, by 3 parts of green quantum dot, 0.3 part of red quantum dot, 23 parts of diffusion particle, 65 parts of line Property polyureas, 11 parts of hexamethylene diisocyanate, 0.19 part of organic carboxylate nucleator, 0.1 part of crosslinking accelerator mix Conjunction is formed uniformly liquefied mixture;
The liquefied mixture of preparation is coated on mould release membrance surface, 30min is heated at 100 DEG C~110 DEG C consolidates resin After chemical conversion film, after mould release membrance is removed, that is, quantum dot layer is obtained;
The quantum dot layer that will be obtained carries out simple tension at 150 DEG C, the upper and lower surface of the quantum dot layer after stretched Respectively after one layer of water oxygen barrier layer of laminating, that is, obtain the quantum dot film of water oxygen obstructing capacity high.
Comparative example 1,
1.5 parts of green quantum dot, 0.14 part of red quantum dot, 40 parts of acrylic resin, 5 parts of toluene two is different Water is coated on after cyanate tripolymer, 0.06 part of crosslinking accelerator, 15 parts of diffusion particle, 20 parts of toluene are well mixed On oxygen barrier layer, heating makes toluene volatilize and cause resin solidification for 15 minutes, is then intercepted in coating surface one layer of water oxygen of laminating Quantum dot film is obtained after layer.
Above example and comparative example are detected, wherein, comparative example 1 is the quantum dot prepared using prior art Film, the matrix resin for using is non-linear resin;Comparative example 2 is quantum dot film commercially available in the prior art;Inspection method is as follows:
Quantum dot film is cut into a print for 14 chi sizes, 14 cun of liquid crystal displays of Blue backlight are placed on In, quantum dot film is located between light guide plate and blast piece, after liquid crystal display continuously works 500 hours under rated voltage, Quantum dot film is taken out, the width in film edge color change region is detected, as a result as shown in table 1.
Table 1
Because vapor and oxygen enter inside quantum dot film from the end face of quantum dot film, the destruction to quantum dot is caused, So the color of quantum dot film edge can change.As shown in table 1, by the embodiment and comparative example of offer relatively more of the present invention Experimental result can be seen that after degradation, the present invention provide water oxygen obstructing capacity high quantum dot film edge face The width in color change region is significantly less than the quantum dot film of prior art, indicates the water oxygen obstructing capacity high of present invention offer Quantum dot film is intercepted and protective number by the quantum dot film that the degree that vapor and oxygen are destroyed is far smaller than prior art in water oxygen Son point film Internal Quantum point aspect, with significant progressive.
Although more herein used the terms such as water oxygen barrier layer, quantum dot layer, diffusion particle, do not arrange Except the possibility using other terms.It is used for the purpose of more easily describing and explaining essence of the invention using these terms; Any additional limitation is construed as all to be disagreed with spirit of the present invention.
Finally it should be noted that:Various embodiments above is merely illustrative of the technical solution of the present invention, rather than its limitations;To the greatest extent Pipe has been described in detail with reference to foregoing embodiments to the present invention, it will be understood by those within the art that:Its according to The technical scheme described in foregoing embodiments can so be modified, or which part or all technical characteristic are entered Row equivalent;And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology The scope of scheme.

Claims (8)

1. a kind of quantum dot film of water oxygen obstructing capacity high, including quantum dot layer and water oxygen barrier layer, the water oxygen barrier layer set Put on the upper and lower surface of the quantum dot layer, it is characterised in that the quantum dot layer includes:It is quantum dot, diffusion particle, linear Resin, nucleator and coalescents.
2. a kind of quantum dot film of water oxygen obstructing capacity high according to claim 1, it is characterised in that the quantum dot layer Raw material including following weight:
3. the quantum dot film of a kind of water oxygen obstructing capacity high according to claim 1, it is characterised in that:The linear resin Linear polyolefin including crystallinity or hemicrystalline, linear polyether dihydroxylic alcohols, linear polyester dihydroxylic alcohols, linear two isocyanic acid One or more in ester, linear polyester, linear polyureas.
4. the quantum dot film of a kind of water oxygen obstructing capacity high according to claim 1, it is characterised in that:The nucleator bag Include organic carboxylate, organic phosphate, disproportionated rosin salt, aromatic amides compound, aliphatic or aromatic carboxylic acid estersization One or more in compound, polyethylene glycol.
5. the quantum dot film of a kind of water oxygen obstructing capacity high according to claim 1, it is characterised in that:The coalescents Including one or more in levelling agent, substrate wetting agents, crosslinking accelerator, organic solvent.
6. the quantum dot film of a kind of water oxygen obstructing capacity high according to claim 1, it is characterised in that:The diffusion particle Including one or more in organic filler, inorganic particulate.
7. the quantum dot film of a kind of water oxygen obstructing capacity high according to claim 1, it is characterised in that:The diffusion particle It is polymethyl methacrylate particle or organic silicon particle.
8. the preparation method of the quantum dot film of a kind of water oxygen obstructing capacity a kind of high according to any one of claim 1~7, It is characterised in that it includes following preparation process:
S010, at room temperature, quantum dot, diffusion particle, linear resin, nucleator and coalescents are uniformly mixed, and form liquid State mixture;
S020, the liquefied mixture in S010 steps is coated on mould release membrance surface, then heats 5min at 80 DEG C~110 DEG C ~30min, makes liquefied mixture be solidified into quantum dot film, then just obtains quantum dot layer after mould release membrance is removed;
S030, by S020 steps prepare quantum dot layer be heated to 110 DEG C~150 DEG C and quantum dot layer unidirectionally drawn Stretch;
S040, after carrying out simple tension the upper and lower surface of quantum dot layer respectively laminating one layer of water oxygen barrier layer after, that is, obtain Gao Shui The quantum dot film of oxygen obstructing capacity.
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CN111844980A (en) * 2020-07-20 2020-10-30 宁波东旭成新材料科技有限公司 Self-sealed edge quantum dot film
CN112011122A (en) * 2019-05-31 2020-12-01 苏州星烁纳米科技有限公司 Quantum dot film and preparation method thereof
CN112009035A (en) * 2019-05-29 2020-12-01 苏州星烁纳米科技有限公司 Quantum dot film and preparation method thereof
CN112213881A (en) * 2020-10-13 2021-01-12 南通创亿达新材料股份有限公司 Quantum dot luminescent plate and display device
CN113480713A (en) * 2021-06-30 2021-10-08 上海交通大学 Preparation method of polyurea quantum dot fluorescent microspheres
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CN113793891A (en) * 2021-09-15 2021-12-14 合肥福纳科技有限公司 Composite diaphragm, backlight module and display device
CN115257125A (en) * 2022-07-27 2022-11-01 重庆翰博显示科技研发中心有限公司 Novel high-barrier quantum dot film and preparation method thereof

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CN111038034A (en) * 2018-10-14 2020-04-21 南京贝迪电子有限公司 Edge-closed quantum dot reinforced membrane and preparation method thereof
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CN111647224B (en) * 2019-03-04 2023-03-31 苏州星烁纳米科技有限公司 Preparation method of quantum dot-polymer composite
CN111647224A (en) * 2019-03-04 2020-09-11 苏州星烁纳米科技有限公司 Preparation method of quantum dot-polymer composite
CN111665585A (en) * 2019-03-08 2020-09-15 苏州星烁纳米科技有限公司 Quantum dot polaroid and display device
CN112009035A (en) * 2019-05-29 2020-12-01 苏州星烁纳米科技有限公司 Quantum dot film and preparation method thereof
CN112011122A (en) * 2019-05-31 2020-12-01 苏州星烁纳米科技有限公司 Quantum dot film and preparation method thereof
CN110277481A (en) * 2019-07-18 2019-09-24 衡山县佳诚新材料有限公司 A kind of scratch resistant and water resistant oxygen quantum dot film
CN111844980A (en) * 2020-07-20 2020-10-30 宁波东旭成新材料科技有限公司 Self-sealed edge quantum dot film
CN112213881A (en) * 2020-10-13 2021-01-12 南通创亿达新材料股份有限公司 Quantum dot luminescent plate and display device
CN113480713A (en) * 2021-06-30 2021-10-08 上海交通大学 Preparation method of polyurea quantum dot fluorescent microspheres
CN113480713B (en) * 2021-06-30 2023-01-24 上海交通大学 Preparation method of polyurea quantum dot fluorescent microspheres
CN113793891A (en) * 2021-09-15 2021-12-14 合肥福纳科技有限公司 Composite diaphragm, backlight module and display device
CN113625491A (en) * 2021-09-16 2021-11-09 合肥福纳科技有限公司 Quantum dot light conversion and light diffusion composite membrane and backlight module
CN115257125A (en) * 2022-07-27 2022-11-01 重庆翰博显示科技研发中心有限公司 Novel high-barrier quantum dot film and preparation method thereof

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