CN106898661B - 一种应力应变辅助的热释电复合材料及其应用 - Google Patents
一种应力应变辅助的热释电复合材料及其应用 Download PDFInfo
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- CN106898661B CN106898661B CN201510967476.7A CN201510967476A CN106898661B CN 106898661 B CN106898661 B CN 106898661B CN 201510967476 A CN201510967476 A CN 201510967476A CN 106898661 B CN106898661 B CN 106898661B
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- 230000003750 conditioning effect Effects 0.000 claims abstract description 5
- 238000001514 detection method Methods 0.000 claims abstract description 5
- 229910002353 SrRuO3 Inorganic materials 0.000 claims description 14
- 230000000694 effects Effects 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 230000002708 enhancing effect Effects 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 6
- 239000007772 electrode material Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910002966 CaCu3Ti4O12 Inorganic materials 0.000 claims description 5
- 239000002033 PVDF binder Substances 0.000 claims description 5
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910012463 LiTaO3 Inorganic materials 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 229910002518 CoFe2O4 Inorganic materials 0.000 claims description 2
- 229910003781 PbTiO3 Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical class [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910018281 LaSrMnO3 Inorganic materials 0.000 claims 2
- 239000002131 composite material Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 84
- 239000010408 film Substances 0.000 description 33
- 229910002113 barium titanate Inorganic materials 0.000 description 14
- 239000000758 substrate Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910004121 SrRuO Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910018279 LaSrMnO Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 210000001367 artery Anatomy 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005621 ferroelectricity Effects 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000035772 mutation Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 210000003462 vein Anatomy 0.000 description 2
- -1 Ba (SrTi) O3 Substances 0.000 description 1
- 229910002902 BiFeO3 Inorganic materials 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
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- 231100000219 mutagenic Toxicity 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
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Claims (11)
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CN201510967476.7A CN106898661B (zh) | 2015-12-18 | 2015-12-18 | 一种应力应变辅助的热释电复合材料及其应用 |
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CN201510967476.7A CN106898661B (zh) | 2015-12-18 | 2015-12-18 | 一种应力应变辅助的热释电复合材料及其应用 |
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CN106898661A CN106898661A (zh) | 2017-06-27 |
CN106898661B true CN106898661B (zh) | 2018-10-19 |
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CN110511411B (zh) * | 2019-09-04 | 2021-02-26 | 电子科技大学 | 一种温度敏感的柔性膜、传感器及柔性膜的制备方法 |
CN111319319B (zh) * | 2020-03-20 | 2021-03-02 | 中国地质大学(北京) | 一种rGO-PEI/PVDF热释电薄膜及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101867011A (zh) * | 2009-04-14 | 2010-10-20 | 中国科学院物理研究所 | 一种热释电薄膜材料及其制备方法 |
CN102830086A (zh) * | 2012-08-31 | 2012-12-19 | 中北大学 | 基于黑硅吸收层及多层组合膜结构的红外探测器敏感元件 |
CN102903789A (zh) * | 2012-07-09 | 2013-01-30 | 电子科技大学 | 复合材料红外探测器制备方法 |
CN104458006A (zh) * | 2014-11-28 | 2015-03-25 | 电子科技大学 | 一种热释电红外探测器敏感元件及其制造方法 |
CN104716255A (zh) * | 2015-03-13 | 2015-06-17 | 电子科技大学 | 一种厚膜热释电敏感元及其制备方法 |
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- 2015-12-18 CN CN201510967476.7A patent/CN106898661B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101867011A (zh) * | 2009-04-14 | 2010-10-20 | 中国科学院物理研究所 | 一种热释电薄膜材料及其制备方法 |
CN102903789A (zh) * | 2012-07-09 | 2013-01-30 | 电子科技大学 | 复合材料红外探测器制备方法 |
CN102830086A (zh) * | 2012-08-31 | 2012-12-19 | 中北大学 | 基于黑硅吸收层及多层组合膜结构的红外探测器敏感元件 |
CN104458006A (zh) * | 2014-11-28 | 2015-03-25 | 电子科技大学 | 一种热释电红外探测器敏感元件及其制造方法 |
CN104716255A (zh) * | 2015-03-13 | 2015-06-17 | 电子科技大学 | 一种厚膜热释电敏感元及其制备方法 |
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Effective date of registration: 20221012 Address after: No. 189 Guangming Road, Zhuangshi street, Zhenhai District, Ningbo City, Zhejiang Province Patentee after: Ningbo magnetic materials Application Technology Innovation Center Co.,Ltd. Address before: 315201, No. 519, Zhuang Avenue, Zhenhai District, Zhejiang, Ningbo Patentee before: NINGBO INSTITUTE OF MATERIALS TECHNOLOGY & ENGINEERING, CHINESE ACADEMY OF SCIENCES |
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