CN106896400A - Silicon photomultiplier operating voltage method to set up in a kind of gamma detection system - Google Patents

Silicon photomultiplier operating voltage method to set up in a kind of gamma detection system Download PDF

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Publication number
CN106896400A
CN106896400A CN201710155974.0A CN201710155974A CN106896400A CN 106896400 A CN106896400 A CN 106896400A CN 201710155974 A CN201710155974 A CN 201710155974A CN 106896400 A CN106896400 A CN 106896400A
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China
Prior art keywords
detection system
operating voltage
gamma
gamma detection
silicon photomultiplier
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CN201710155974.0A
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Inventor
黄立华
荀爱兵
李顺
郭凯
黄惠杰
沈百飞
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Shanghai Institute of Optics and Fine Mechanics of CAS
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Shanghai Institute of Optics and Fine Mechanics of CAS
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Priority to CN201710155974.0A priority Critical patent/CN106896400A/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T7/00—Details of radiation-measuring instruments

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)

Abstract

Silicon photomultiplier operating voltage method to set up in a kind of gamma detection system, including：Gamma detection system is placed in the environment of constant temperature and humidity；Selection gamma emitter；Operating voltage V is added to silicon photomultiplier；Selected gamma emitter is placed in gamma detection system front at L, the output with the multi-channel acquisition system of gamma detection system to silicon photomultiplier is gathered m times；Signal to noise ratio Y when evaluation work voltage is Vk；Search the greatest member Y in signal to noise ratio array Ymax, corresponding VmaxIt is exactly the optimum operating voltage of silicon photomultiplier in gamma detection system.The present invention can find out optimal operating voltage from the breakdown voltage of manufacturer's offer and overvoltage region, for gamma detection system provides optimal detectivity.

Description

Silicon photomultiplier operating voltage method to set up in a kind of gamma detection system
Technical field
The present invention relates to gamma ray detection field, silicon photomultiplier work in more particularly to a kind of gamma detection system Make voltage setting method
Background technology
Gamma detection system is generally by scintillation crystal, electrooptical device, follow-up signal processing circuit three parts group Into.Gamma ray first passes around scintillation crystal, and after sedimentary energy in scintillation crystal, scintillation crystal sends can be turned by photoelectricity The optical signal that parallel operation part is detected；Optical signal is by being converted into corresponding electric signal output after electrooptical device；Output Electric signal carry out the treatment such as denoising, smooth by follow-up signal processing circuit after, form corresponding power spectrum.
At present, frequently with photomultiplier (PMT) as electrooptical device, but the operating voltage needed for PMT is high, chi It is very little larger, therefore PMT is not particularly suited for portable gamma detection system.In addition, PMT is easy during work to magnetic-field-sensitive By magnetic interference, therefore it also has certain requirement to working environment.
Silicon photomultiplier (SiPM) as emerging electrooptical device, its gain level and quantum efficiency and PMT Quite, but its required operating voltage is very low, compact dimensions, be highly suitable for portable gamma detection system, while its is right Magnetic field is insensitive, and the requirement to working environment is relatively low, therefore, the gal by the use of SiPM as electrooptical device is occurred in that in recent years Horse detection system.
Generally, SiPM manufacturers can clearly be given every kind of model SiPM breakdown voltage (Vbr) and overvoltage region (VTov-, VTov+).So, the operating voltage of SiPM is breakdown voltage and over-pressed sum.Change the operating voltage of SiPM, i.e., in over-pressed model Interior change overpressure value is enclosed, the key characteristic of SiPM --- photon detection efficiency (PDE), dark counting, gain level can all change Become, and then influence the important performance characteristics such as energy resolution, the sensitivity of gamma radiation detector.So, in gamma detection system It is very crucial that SiPM optimal operating voltages are set in system.
At present, in the document delivered, the method to set up to the optimum operating voltage of SiPM is had no.
The content of the invention
In order to fill up the vacancy of above-mentioned technology, worked the invention provides silicon photomultiplier in a kind of gamma detection system The method to set up of voltage.The present invention can find out optimal work electricity from the breakdown voltage of SiPM manufacturers offer and overvoltage region Pressure, for gamma detection system provides optimal detectivity.
Technical solution of the invention is as follows：
Silicon photomultiplier operating voltage method to set up, comprises the following steps in a kind of gamma detection system：
1) gamma detection system is placed in 12-24 hours in the environment of constant temperature and humidity；
2) a gamma emitter is selected, the gamma emitter has the power spectrum for determining, while only one of which in its power spectrum Full energy peak；
3) operating voltage array V [V are defined0,V1,V2……Vk……Vn-1,Vn], signal to noise ratio array Y [Y0,Y1,Y2…… Yk……Yn-1,Yn], according to given overvoltage region (VTov-, VTov+), evaluation work voltage V, formula is as follows：
Wherein, Vbr is breakdown voltage；N is the number of subdivision overvoltage, can be chosen according to the actual requirements；K represents current experiment Ordinal number；
4) k=0, operating voltage V=V are set0；
5) operating voltage V, V=V are added to silicon photomultiplierk, with the multi-channel acquisition system of gamma detection system to silicon The output of photomultiplier is gathered m times, each continuous T minute, and m dark count numerical value is obtained altogether, and this m dark count numerical value is made even , the dark count numerical value of N of gamma detection system when obtaining operating voltage for Vk *；
6) selected gamma emitter is placed in gamma detection system front at L, it is many with gamma detection system Output of the road acquisition system to silicon photomultiplier is gathered m times, and each continuous T minute obtains m high energy particle signal-count altogether Value, is averaged to this m high energy particle signal-count value, obtains the high energy particle of gamma detection system when operating voltage is V Signal-count Nk；
7) signal to noise ratio Y when evaluation work voltage is Vk, formula is as follows：
Yk=Nk */(Nk-Nk *)；
8) k is worked as<During n, k=k+1, return to step 5 are made)；
As k=n, into step 9)；
9) the greatest member Y in signal to noise ratio array Y is searchedmax, corresponding VmaxIt is exactly silicon photoelectricity in gamma detection system The optimum operating voltage of multiplier tube.
Between 1cm to 5cm, between 3 times to 5 times, T is between 2min to 5min for m for described L.
Compared with prior art, the beneficial effects of the invention are as follows in the breakdown voltage and overvoltage region that can be provided from manufacturer Optimal operating voltage is found out, for gamma detection system provides optimal detectivity.
Brief description of the drawings
Fig. 1 is the flow chart of silicon photomultiplier operating voltage method to set up in gamma detection system of the present invention
Specific embodiment
The invention will be further described with reference to the accompanying drawings and examples, but should not limit protection model of the invention with this Enclose.
Specific implementation steps are as follows：
1) 12-24 hours in the environment of gamma detection system being placed in into constant temperature, constant humidity, gamma radiation detector is made in detection It is preceding to be in a state for stabilization.Gamma radiation detector is typically placed in constant temperature, constant humidity environment lower 18 hours.
2) a gamma emitter is selected, the gamma emitter has the power spectrum for determining, while only one of which in its power spectrum Full energy peak；
Main selection Cs137 gamma emitters, because Cs137 has the power spectrum for determining, while its only one of which 661KeV Full energy peak.
3) operating voltage array V [V are defined0,V1,V2……Vk……Vn-1,Vn], signal to noise ratio array Y [Y0,Y1,Y2…… Yk……Yn-1,Yn], according to given overvoltage region (VTov-, VTov+), evaluation work voltage V, formula is as follows：
Wherein, Vbr is breakdown voltage；N is the number of subdivision overvoltage, can be chosen according to the actual requirements；K represents current experiment Ordinal number；
If the overvoltage region that manufacturer is given is (1V, 5V), the breakdown voltage for being given is 24V, then the selection of operating voltage can To beWherein k minimum values are 0, and maximum is 10.So as to can obtain operating voltage array (25.0V, 25.4V, 25.8V, 26.2V, 26.6V, 27.0V, 27.4V, 27.8V, 28.2V, 28.6V, 29.0V)
4) first, k=0 is set, now operating voltage V=V0；
5) operating voltage V, V=V are added to SiPMk.In the case of no standard gamma radiation source, visited with gamma radiation Survey output of the multi-channel acquisition system of device to SiPM to gather m times, each continuous T minute obtains m dark count numerical value, to this m altogether Dark count numerical value is averaged, the dark count numerical value of N of gamma radiation detector when obtaining operating voltage for Vk *；
6) selected gamma emitter is placed in gamma radiation detector front at L, uses gamma radiation detector Multi-channel acquisition system the output of SiPM is gathered m time, each continuous T minute, m high energy particle count value of acquisition altogether, to this m Individual high energy particle signal-count value is averaged, and obtains the signal-count N of gamma radiation detector when operating voltage is Vk；
Generally, L is set to 1cm, and m takes 3, T and takes 3.
7) signal to noise ratio Y when evaluation work voltage is Vk, formula is as follows：
Yk=Nk */(Nk-Nk *)；
8) k is worked as<During n, k=k+1, return to step 5 are made)；
As k=n, into step 9)；
Thus it is calculated signal to noise ratio array Y.
9) the greatest member Y in signal to noise ratio array Y is searchedmax, max 0 between n, now corresponding VmaxIt is exactly gal The optimum operating voltage of SiPM in horse radiation detector.
As shown in figure 1, the invention mainly comprises the following steps：Step 1 by gamma detection device as constant temperature and humidity ring Under border；Step 2 selects a gamma emitter；Step 3 determines operating voltage array；Step 4 selects initial operating voltage, step During 5 no standard gamma radiation source, dark counting is obtained；When step 6 has standard gamma radiation source, high energy particle signal meter is obtained Number；Step 7 calculates signal to noise ratio；Step 8 selects new operating voltage, and repeat step 5 to step 8, until surveyed being needed Survey operating voltage；Step 9 determines optimal operating voltage.

Claims (2)

1. silicon photomultiplier operating voltage method to set up in a kind of gamma detection system, it is characterised in that the method is included such as Lower step：
1) gamma detection system is placed in 12~24 hours in the environment of constant temperature and humidity；
2) a gamma emitter is selected, the gamma emitter has the power spectrum for determining, while only one of which is all-round in its power spectrum Peak；
3) operating voltage array V [V are defined0,V1,V2……Vk……Vn-1,Vn], signal to noise ratio array Y [Y0,Y1,Y2……Yk…… Yn-1,Yn], according to given overvoltage region (VTov-, VTov+), evaluation work voltage V, formula is as follows：
V k = V b r + k &times; ( V T o v + ) - ( V T o v - ) n + V T o v - ,
Wherein, Vbr is breakdown voltage；N is the number of subdivision overvoltage, is chosen according to the actual requirements；K represents current experiment ordinal number；
4) k=0, operating voltage V=V are set0；
5) operating voltage V, V=V are added to silicon photomultiplierk, with the multi-channel acquisition system of gamma detection system to silicon photoelectricity times The output for increasing pipe is gathered m times, each continuous T minute, and m dark count numerical value is obtained altogether, and this m dark count numerical value is averaged, and is obtained The dark count numerical value of N of gamma detection system when operating voltage is Vk *；
6) selected gamma emitter is placed in gamma detection system front at L, is adopted with the multiple tracks of gamma detection system Output of the collecting system to silicon photomultiplier is gathered m times, and each continuous T minute obtains m high energy particle signal-count value altogether, This m high energy particle signal-count value is averaged, the high energy particle signal of gamma detection system when operating voltage is V is obtained Count Nk；
7) signal to noise ratio Y when evaluation work voltage is Vk, formula is as follows：
Yk=Nk */(Nk-Nk *)；
8) k is worked as<During n, k=k+1, return to step 5 are made)；
As k=n, into step 9)；
9) the greatest member Y in signal to noise ratio array Y is searchedmax, corresponding VmaxIt is exactly silicon photomultiplier transit in gamma detection system The optimum operating voltage of pipe.
2. in gamma detection system according to claim 1 silicon photomultiplier operating voltage method to set up, its feature It is that between 1cm to 5cm, between 3 times to 5 times, T is between 2min to 5min for m for described L.
CN201710155974.0A 2017-03-16 2017-03-16 Silicon photomultiplier operating voltage method to set up in a kind of gamma detection system Pending CN106896400A (en)

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN112596096A (en) * 2020-11-24 2021-04-02 中国科学院上海光学精密机械研究所 Ultrafast gamma ray real-time detection device based on SiPM

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CN102341727A (en) * 2009-03-06 2012-02-01 皇家飞利浦电子股份有限公司 Advanced temperature compensation and control circuit for single photon counters

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US20040094693A1 (en) * 2000-05-25 2004-05-20 Andreas Ganghofer Method of adjusting an optronic fuse system
CN102341727A (en) * 2009-03-06 2012-02-01 皇家飞利浦电子股份有限公司 Advanced temperature compensation and control circuit for single photon counters
US20100301192A1 (en) * 2009-05-29 2010-12-02 General Electric Company Solid-state photomultiplier module with improved signal-to-noise ratio

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112596096A (en) * 2020-11-24 2021-04-02 中国科学院上海光学精密机械研究所 Ultrafast gamma ray real-time detection device based on SiPM
CN112596096B (en) * 2020-11-24 2023-04-11 中国科学院上海光学精密机械研究所 Ultrafast gamma ray real-time detection device based on SiPM

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