CN106887392A - The preparation method of semi-insulating polysilicon film - Google Patents
The preparation method of semi-insulating polysilicon film Download PDFInfo
- Publication number
- CN106887392A CN106887392A CN201710169837.2A CN201710169837A CN106887392A CN 106887392 A CN106887392 A CN 106887392A CN 201710169837 A CN201710169837 A CN 201710169837A CN 106887392 A CN106887392 A CN 106887392A
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- China
- Prior art keywords
- semi
- preparation
- insulating polysilicon
- sih
- polysilicon film
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 21
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000010408 film Substances 0.000 claims abstract description 23
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims abstract description 11
- 238000000427 thin-film deposition Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 17
- 239000012495 reaction gas Substances 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract description 11
- 239000000126 substance Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000000377 silicon dioxide Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910001415 sodium ion Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/298—Semiconductor material, e.g. amorphous silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention provides a kind of preparation method of semi-insulating polysilicon film, comprise the following steps：With SiH4And N2O is used as reacting gas, N2As gas is carried, semi-insulating polysilicon thin film deposition is carried out in LPCVD systems, described reaction condition is as follows：1）Temperature：620‑650℃；2）Air pressure：66.5 Pa；3）SiH4Gas flow is 100sccm -120sccm；4）SiH4With N2The flow-rate ratio of O is 24：1.The preparation method of semi-insulating polysilicon film of the invention, the semi-insulating polysilicon film chemical stability of preparation very well, is particularly suitable for device passivation.
Description
Technical field
The present invention relates to a kind of preparation method of semi-insulating polysilicon film, belong to technical field of semiconductors.
Background technology
Nineteen fifty-nine, American M.M. A Tala have studied silicon device surface exposure instability problem in an atmosphere, carry
Going out heat growth silicon dioxide (SiO2) film has good surface passivation effect.Hereafter, silicon dioxide film is used widely.60
Mid-nineties 90, it has been found that silicon dioxide film can not completely diffusion from blocking harmful impurity (such as sodium ion) to silicon (Si) surface,
Have a strong impact on the stability of MOS device.Kinds of surface passivating film growth technique is worked out later, wherein with phosphorosilicate glass
(PSG), low temperature deposition silica, chemical gaseous phase deposition of silicon nitride (Si3N4), alundum (Al2O3) (Al2O3) and polyimides
Deng the most applicable.
Directly the first passivation layer is commonly referred to the deielectric-coating of semiconductor contact.Typical media is thermally grown silica
Film.Before metal layer is formed, the passivation layer of regrowth second on the first passivation layer, mainly by phosphorosilicate glass, low temperature deposition
Silica etc. is constituted, and can absorb and stop that sodium ion spreads to silicon substrate.To make surface passivation protective effect more preferably and making gold
Categoryization layer does not receive mechanical abrasion, in metallization layer regrowth third layer passivation layer.This third layer deielectric-coating can be phosphorus silicon
Glass, low temperature deposition silica, chemical vapor deposition silicon nitride, alundum (Al2O3) or polyimides.This sandwich construction is blunt
Change, be widely used mode in modern microelectronic technology.
Basic demand for passivation layer is：Contamination of the objectionable impurities to device surface can for a long time be prevented；Thermal coefficient of expansion
Matched with silicon substrate；The growth temperature of film is low；The component and thickness evenness of passivating film are good；Pinhold density is relatively low and photoetching after
Readily available gradual step.
Existing semiconductor passivation film is substantially all and belongs to dielectric film, and doing passivation layer with them is difficult to avoid that extra electric field
Influence and the interference of movable charge, it is impossible to make semiconductor devices steady operation, partly led particularly with breakdown reverse voltage is higher
Body device, problem is more prominent.
The content of the invention
The purpose of the present invention is to overcome the deficiencies in the prior art, there is provided a kind of preparation method of semi-insulating polysilicon film.
The preparation method of semi-insulating polysilicon film of the invention is as follows：With SiH4And N2O is used as reacting gas, N2As
Gas is carried, semi-insulating polysilicon thin film deposition is carried out in LPCVD systems,
Described reaction condition is as follows：
1）Temperature：620-650℃；
2）Air pressure：66.5 Pa；
3）SiH4Gas flow is 100sccm -120sccm；
4）SiH4With N2The flow-rate ratio of O is 2-4：1.
Described LPCVD systems are horizontal reacting stove.
The preparation method of semi-insulating polysilicon film of the invention, the semi-insulating polysilicon film chemical stability of preparation is very
It is good, it is particularly suitable for device passivation.
Specific embodiment
Embodiment 1
The preparation method of semi-insulating polysilicon film of the invention is as follows：With SiH4And N2O is used as reacting gas, N2As carrying
Gas, carries out semi-insulating polysilicon thin film deposition in LPCVD systems,
Described reaction condition is as follows：
1）Temperature：620℃；
2）Air pressure：66.5 Pa；
3）SiH4Gas flow is 100sccm；
4）N2O gas flows are 50sccm；
Described LPCVD systems are horizontal reacting stove.
Embodiment 2
The preparation method of semi-insulating polysilicon film of the invention is as follows：With SiH4And N2O is used as reacting gas, N2As carrying
Gas, carries out semi-insulating polysilicon thin film deposition in LPCVD systems,
Described reaction condition is as follows：
1）Temperature：640℃；
2）Air pressure：66.5 Pa；
3）SiH4Gas flow is 120sccm；
4）N2O gas flows are 30sccm；
Described LPCVD systems are horizontal reacting stove.
Embodiment 3
The preparation method of semi-insulating polysilicon film of the invention is as follows：With SiH4And N2O is used as reacting gas, N2As carrying
Gas, carries out semi-insulating polysilicon thin film deposition in LPCVD systems,
Described reaction condition is as follows：
1）Temperature：650℃；
2）Air pressure：66.5 Pa；
3）SiH4Gas flow is 105sccm；
4）N2O gas flows are 35sccm；
Described LPCVD systems are horizontal reacting stove.
Claims (2)
1. the preparation method of semi-insulating polysilicon film, it is characterised in that comprise the following steps：With SiH4And N2O is used as reaction gas
Body, N2As gas is carried, semi-insulating polysilicon thin film deposition is carried out in LPCVD systems；
Described reaction condition is as follows：
1）Temperature：620-650℃；
2）Air pressure：66.5 Pa；
3）SiH4Gas flow is 100sccm -120sccm；
4）SiH4With N2The flow-rate ratio of O is 2-4：1.
2. the preparation method of semi-insulating polysilicon film according to claim 1, it is characterised in that described LPCVD systems
It is horizontal reacting stove to unite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710169837.2A CN106887392A (en) | 2017-03-21 | 2017-03-21 | The preparation method of semi-insulating polysilicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710169837.2A CN106887392A (en) | 2017-03-21 | 2017-03-21 | The preparation method of semi-insulating polysilicon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106887392A true CN106887392A (en) | 2017-06-23 |
Family
ID=59182493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710169837.2A Pending CN106887392A (en) | 2017-03-21 | 2017-03-21 | The preparation method of semi-insulating polysilicon film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106887392A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102017085A (en) * | 2008-05-02 | 2011-04-13 | 株式会社Eugene科技 | Method for depositing of ultra fine grain poly silicon thin film |
| CN103540909A (en) * | 2012-07-13 | 2014-01-29 | 无锡华润上华科技有限公司 | LPCVD (Low Pressure Chemical Vapor Deposition) method of polycrystalline silicon |
| CN105568249A (en) * | 2014-11-03 | 2016-05-11 | 气体产品与化学公司 | Silicon-based films and methods of forming the same |
-
2017
- 2017-03-21 CN CN201710169837.2A patent/CN106887392A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102017085A (en) * | 2008-05-02 | 2011-04-13 | 株式会社Eugene科技 | Method for depositing of ultra fine grain poly silicon thin film |
| CN103540909A (en) * | 2012-07-13 | 2014-01-29 | 无锡华润上华科技有限公司 | LPCVD (Low Pressure Chemical Vapor Deposition) method of polycrystalline silicon |
| CN105568249A (en) * | 2014-11-03 | 2016-05-11 | 气体产品与化学公司 | Silicon-based films and methods of forming the same |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 226600, Jiangsu province Nantong city Haian county old dam Town Industrial Park Applicant after: Jiangsu Ming core microelectronic Limited by Share Ltd Address before: 226600 Jiangsu city of Nantong province Haian County Binhai port old dam old dam District Town Industrial Park Applicant before: Nantong Mingxin Microelectronics Co., Ltd. |
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170623 |