CN111370282B - Cleaning method of plasma enhanced chemical vapor deposition chamber - Google Patents

Cleaning method of plasma enhanced chemical vapor deposition chamber Download PDF

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Publication number
CN111370282B
CN111370282B CN201811598157.3A CN201811598157A CN111370282B CN 111370282 B CN111370282 B CN 111370282B CN 201811598157 A CN201811598157 A CN 201811598157A CN 111370282 B CN111370282 B CN 111370282B
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cleaning
vapor deposition
chemical vapor
plasma enhanced
enhanced chemical
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CN111370282A (en
Inventor
刘自明
崔虎山
邹志文
蒋中原
车东晨
王珏斌
陈璐
许开东
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Jiangsu Leuven Instruments Co Ltd
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Jiangsu Leuven Instruments Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning

Abstract

The invention discloses a cleaning method of a plasma enhanced chemical vapor deposition chamber, and the adopted cleaning gas comprises CF4And N2And (O). The invention can effectively solve the problem of cleaning the Si-based plasma enhanced chemical vapor deposition chamber used by small research institutions, can avoid the risk of polluting and even blocking the gas circuit, improves the reliability of equipment, prolongs the maintenance period of the equipment, improves the production efficiency, reduces particle pollution and improves the product quality.

Description

Cleaning method of plasma enhanced chemical vapor deposition chamber
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for cleaning a plasma enhanced chemical vapor deposition chamber.
Background
The film coating by adopting the silane-based Plasma Enhanced Chemical Vapor Deposition (PECVD) mode not only can deposit a layer of required film on the surface of a wafer, but also can coat a layer of film or silicon olefin (silene) polymer on the inner wall of a chamber and the surface of a hot table, which is not desirable in the process, and the PECVD process chamber with a cold wall is specially designed for reducing the deposition of the film on the inner wall of the chamber body, and prolonging the maintenance and maintenance period of equipment.
There are many good ways to reduce thin film material in PECVDDeposition of the walls, but the effect is still not ideal. To this end, a cleaning process is introduced, and a fluorine (F) -based gas is generally used for cleaning silicon (Si) -based PECVD because silicon monoxide (SiO) and silicon nitride (SiN) -based thin films react under plasma to form volatile silicon tetrafluoride (SiF)4). Nitrogen trifluoride (NF) is commonly used in the industry3) As an F source. Scientific research institutions such as universities and research institutes are difficult to bear NF due to the restriction of capital and other factors3As a cleaning gas, a fluorocarbon gas is generally used to remove SiO and SiN, and oxygen is used to remove silylene to form SiO, and the two are combined to form a cleaning gas, O2The introduction of (2) solves the problem of carbon contamination deposition, but due to Silane (SiH)4) Easily react with oxygen to form nonvolatile silicon dioxide (SiO)2) The risk of blocking the gas path by silicon oxide is increased.
Disclosure of Invention
In order to solve the above problems, the present invention discloses a method for cleaning a plasma enhanced chemical vapor deposition chamber, wherein the cleaning gas comprises CF4And N2O。
In the cleaning method of the pecvd chamber according to the present invention, it is preferable that the method comprises the steps of: introducing nitrogen for purging; adjusting the distance between the polar plates to be maximum, adjusting relevant parameters of a machine table, and introducing the cleaning gas to finish cleaning the surface of the hot table and the inner wall of the cavity; adjusting the distance between the polar plates to be minimum, adjusting relevant parameters of a machine table, and introducing the cleaning gas to finish cleaning the side wall of the hot table; then N is introduced again2Purging is carried out; introducing a large amount of N2And (5) purging.
In the method for cleaning a pecvd chamber of the present invention, preferably, the parameters related to the machine include radio frequency power, cavity pressure and thermal stage control temperature.
In the cleaning method of the plasma enhanced chemical vapor deposition chamber, the radio frequency power is preferably between 0 and 2000W.
In the method for cleaning a pecvd chamber according to the present invention, preferably, the cleaning gas CF is4The flow rate of (A) is between 0 and 2000sccm, and the flow rate of (N) is2The flow rate of O is between 0sccm and 2000 sccm.
In the cleaning method of the plasma enhanced chemical vapor deposition chamber, preferably, the pressure of the chamber is between 0.1 and 5 Torr.
In the method for cleaning a pecvd chamber according to the present invention, preferably, the temperature of the hot stage is controlled to be between 100 ℃ and 600 ℃.
In the method for cleaning a plasma enhanced chemical vapor deposition chamber of the present invention, preferably, the cleaning time is adjusted according to the total amount of the coating film and the etching rate of the thin film.
In the cleaning method of the plasma enhanced chemical vapor deposition chamber, preferably, in the step of introducing the nitrogen gas for purging, the flow rate of the introduced nitrogen gas is 0-2000 sccm, and the nitrogen gas is continuously introduced for multiple times, 10-60 s each time.
The cleaning method of the plasma enhanced chemical vapor deposition chamber can avoid the risk that the gas circuit is polluted or even blocked, and improve the reliability of the equipment. In addition, the method can prolong the maintenance period of the equipment, improve the production efficiency, reduce the particle pollution and improve the product quality.
Drawings
FIG. 1 is a flow chart of a method for cleaning a PECVD chamber.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it should be understood that the specific embodiments described herein are only for explaining the present invention and are not intended to limit the present invention. The described embodiments are only some embodiments of the invention, not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "vertical", "horizontal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Furthermore, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of the devices are described below in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details. Unless otherwise specified below, each part in the device may be formed of a material known to those skilled in the art, or a material having a similar function developed in the future may be used.
FIG. 1 is a flow chart of a method for cleaning a PECVD chamber of the present invention. The following describes the cleaning method of the pecvd chamber according to the present invention with reference to fig. 1.
In step S1, after the deposition of SiO, SiN, and the like is completed in the PECVD, the wafer is taken out.
In step S2, a proper amount of nitrogen is introduced for purging, the flow rate of the nitrogen is adjusted between 0sccm and 2000sccm, and purging is continuously performed for 1 to 5 times, 10S to 60S each time.
In step S3, after the purging is completed, the inter-electrode distance is adjusted to the maximum, the relevant process parameters of the machine are adjusted, and a cleaning gas, carbon tetrafluoride (CF), is introduced4) And laughing gas (N)2O) cleaning the surface of the heating table and the inner wall of the cavity. If the Radio Frequency (RF) power is 0-2000W, the pressure of the cavity is 0.1-5 Torr, the temperature of the heat stage is controlled to be 100-600 ℃, CF4The flow rate of (1) is 0 to 2000sccm, N2The flow rate of O is 0-2000 sccm, and the cleaning time can be adjusted according to the actual total coating amount and the film etching rate in the specific process environment. The film etching rate refers to the use of the cleaning on PECVD equipmentThe etching rate of the menu etching SiO or SiN is the cleaning rate of the SiO or SiN. Wherein, carbon tetrafluoride reacts with parasitic films of SiO or SiN to generate volatile SiF4The effect of laughing gas is to generate SiO with the silicon-based polymer, and carbon tetrafluoride does not directly react with the silicon-based polymer.
In step S4, the distance between the plates is adjusted to minimum, the relevant parameters of the machine are changed, and the cleaning gas CF is introduced4And N2And O, cleaning the side wall of the heat station. Wherein the RF power is 0-2000W, the pressure of the cavity is 0.1-5 Torr, the temperature of the hot stage is controlled to be 100-600 ℃, and CF is added4The flow rate is 0-2000 sccm, N2The O flow is 0-2000 sccm, and the cleaning time can be adjusted according to the actual total coating amount and the film etching rate in the specific process environment.
In step S5, the appropriate amount of N is again introduced2And (4) purging, wherein the flow is adjustable within 0-2000 sccm, and the purging is continuously performed for 1-5 times, 10-60 s each time.
Finally, in step S6, a large amount of N is introduced2And (5) carrying out purging with the flow rate of 2000sccm for 60-600 s continuously, thereby completing the cleaning process.
To more particularly illustrate the cleaning method of the pecvd chamber of the present invention, a specific embodiment is described below.
In step S1, after the process of depositing 1 μm SiO is completed in PECVD, the wafer is taken out.
In step S2, N is introduced in an appropriate amount2Purging was carried out at a flow rate of 200sccm for 3 consecutive times for 10 seconds each.
In step S3, after the purging is completed, the inter-plate distance is adjusted to the maximum, and the relevant parameters of the machine are adjusted as follows: the RF power was 400W, the chamber pressure was 1.2Torr, and the temperature was controlled at 300 ℃ on the hot stage. Cleaning gas CF is introduced4And N2O, wherein CF4The flow rate is 180sccm, N2The flow rate of O is 120sccm, the cleaning time is 480s, and the cleaning of the surface of the thermal platform and the inner wall of the chamber is completed.
In step S4, after the cleaning, the distance between the plates is adjusted to the minimum, and the parameters related to the machine are adjustedThe radio frequency power is 200W, the pressure of the cavity is 1.6Torr, the temperature of the hot bench is controlled at 300 ℃, and the cleaning gas CF is introduced4And N2O, wherein CF4The flow rate is 180sccm, N2And the flow rate of O is 120sccm, the cleaning time is 120s, and the cleaning of the side wall of the thermal platform is completed.
In step S5, the appropriate amount of N is introduced again2Purging was carried out at a flow rate of 200sccm for 10 seconds 3 times in succession.
In step S6, N is finally turned on2Purging was performed at a flow rate of 300sccm for 120 consecutive seconds, thereby completing the cleaning process.
The invention can avoid the risk that the gas circuit is polluted or even blocked, and improve the reliability of the equipment. In addition, the method can prolong the maintenance period of the equipment, improve the production efficiency, reduce the particle pollution and improve the product quality.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.

Claims (9)

1. A method for cleaning a plasma enhanced chemical vapor deposition chamber is characterized in that,
the cleaning gas used comprises CF4And N2O, wherein, N2The role of O is to form SiO with the silicon-based polymer.
2. The method of claim 1, wherein the cleaning step comprises the step of cleaning the plasma enhanced chemical vapor deposition chamber,
the method comprises the following steps:
introducing nitrogen for purging;
adjusting the distance between the polar plates to be maximum, adjusting relevant parameters of a machine table, and introducing the cleaning gas to finish cleaning the surface of the hot table and the inner wall of the cavity;
adjusting the distance between the polar plates to be minimum, adjusting relevant parameters of a machine table, and introducing the cleaning gas to finish cleaning the side wall of the hot table;
introducing nitrogen again for purging;
a large amount of nitrogen was introduced for purging.
3. The method of claim 2, wherein the cleaning step comprises the step of cleaning the plasma enhanced chemical vapor deposition chamber,
the relevant parameters of the machine comprise radio frequency power, cavity pressure and hot bench control temperature.
4. The method of claim 3,
the radio frequency power is between 0W and 2000W.
5. The method of claim 2, wherein the substrate is a substrate for a plasma enhanced chemical vapor deposition chamber,
CF in the cleaning gas4The flow rate of (A) is between 0 and 2000sccm, and the flow rate of (N) is2The flow rate of O is between 0sccm and 2000 sccm.
6. The method of claim 3,
the pressure of the cavity is 0.1-5 Torr.
7. The method of claim 3, wherein the cleaning step is performed in a plasma enhanced chemical vapor deposition chamber,
the temperature of the hot bench is controlled between 100 ℃ and 600 ℃.
8. The method of claim 2, wherein the cleaning step comprises the step of cleaning the plasma enhanced chemical vapor deposition chamber,
the cleaning time is adjusted according to the total coating amount and the film etching rate.
9. The method of claim 2, wherein the cleaning step comprises the step of cleaning the plasma enhanced chemical vapor deposition chamber,
and in the step of introducing nitrogen for purging, introducing the nitrogen at a flow rate of 0-2000 sccm for 10-60 s continuously for many times.
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CN214538795U (en) * 2020-08-19 2021-10-29 赵永刚 Sampling tank for collecting and storing ambient air samples
CN112609168B (en) * 2020-11-30 2023-06-06 中威新能源(成都)有限公司 Method for rapidly cleaning accumulated film in large-area vacuum chamber
CN112813415A (en) * 2020-12-31 2021-05-18 拓荆科技股份有限公司 Method for cleaning inside of cavity

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW289836B (en) * 1996-02-16 1996-11-01 Novellus Systems Inc Chemical vapor deposition system including dedicated cleaning gas injection
JP2004343026A (en) * 2003-03-14 2004-12-02 Research Institute Of Innovative Technology For The Earth Cvd apparatus and method of cleaning cvd apparatus
CN1727082A (en) * 2004-05-12 2006-02-01 气体产品与化学公司 Low temperature CVD chamber cleaning using dilute NF3
CN102446833A (en) * 2011-09-29 2012-05-09 上海华力微电子有限公司 Processing method for reducing particles of dual-damascene silicon nitride process
CN102755969A (en) * 2011-04-28 2012-10-31 中芯国际集成电路制造(上海)有限公司 Method for improving surface cleaning ability of reaction unit
CN106575609A (en) * 2014-07-21 2017-04-19 应用材料公司 Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
CN106929822A (en) * 2017-04-10 2017-07-07 上海华力微电子有限公司 A kind of membrane deposition method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW289836B (en) * 1996-02-16 1996-11-01 Novellus Systems Inc Chemical vapor deposition system including dedicated cleaning gas injection
JP2004343026A (en) * 2003-03-14 2004-12-02 Research Institute Of Innovative Technology For The Earth Cvd apparatus and method of cleaning cvd apparatus
CN1727082A (en) * 2004-05-12 2006-02-01 气体产品与化学公司 Low temperature CVD chamber cleaning using dilute NF3
CN102755969A (en) * 2011-04-28 2012-10-31 中芯国际集成电路制造(上海)有限公司 Method for improving surface cleaning ability of reaction unit
CN102446833A (en) * 2011-09-29 2012-05-09 上海华力微电子有限公司 Processing method for reducing particles of dual-damascene silicon nitride process
CN106575609A (en) * 2014-07-21 2017-04-19 应用材料公司 Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
CN106929822A (en) * 2017-04-10 2017-07-07 上海华力微电子有限公司 A kind of membrane deposition method

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Address after: 221300 No.8, Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province

Patentee after: Jiangsu Luwen Instrument Co.,Ltd.

Address before: 221300 No. 8, Liaohe West Road, Pizhou Economic Development Zone, Pizhou City, Xuzhou City, Jiangsu Province

Patentee before: JIANGSU LEUVEN INSTRUMMENTS Co.,Ltd.