CN106881140A - A kind of carbonitride/Graphene/(040) crystal face pucherite hetero-junctions and its preparation method and application - Google Patents

A kind of carbonitride/Graphene/(040) crystal face pucherite hetero-junctions and its preparation method and application Download PDF

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CN106881140A
CN106881140A CN201710174734.5A CN201710174734A CN106881140A CN 106881140 A CN106881140 A CN 106881140A CN 201710174734 A CN201710174734 A CN 201710174734A CN 106881140 A CN106881140 A CN 106881140A
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crystal face
bivo
powder
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rgo
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谈国强
王颖
赵程程
任慧君
夏傲
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Beijing Zhichanhui Technology Co ltd
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Shaanxi University of Science and Technology
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Abstract

The invention discloses a kind of carbonitride/Graphene/(040) crystal face pucherite hetero-junctions and its preparation method and application, hydro-thermal method synthesis (040) crystal face BiVO is first passed through4Powder, and g C are obtained by calcination method3N4Powder, then by hydro-thermal method by (040) crystal face BiVO4Powder is compound with GO to obtain RGO/ (040) crystal face BiVO4Powder, finally by ultrasonic method by g C3N4Powder and RGO/ (040) crystal face BiVO4The compound of powder obtains g C3N4/ RGO/ (040) crystal face BiVO4Hetero-junctions.G C after compound3N4, RGO and (040) crystal face BiVO4Three-phase coexistence simultaneously keeps respective growth tendency, g C3N4, RGO and (040) crystal face BiVO4Between form hetero-junctions and mutual level-density parameter, be conducive to the separation in light induced electron and hole, make (040) crystal face BiVO4Photoresponse scope becomes big, and the separation rate of photo-generated carrier is improved, so as to improve (040) crystal face BiVO4Photocatalysis performance.

Description

A kind of carbonitride/Graphene/(040) crystal face pucherite hetero-junctions and preparation method thereof And application
Technical field
The invention belongs to field of functional materials, it is related to a kind of g-C3N4/ RGO/ (040) crystal face BiVO4Hetero-junctions and its preparation Methods and applications.
Background technology
BiVO4It is a kind of photochemical catalyst with visible light activity, mainly there is monocline scheelite, cubic zircon ore deposit, four directions Three kinds of crystal formations of scheelite, wherein monoclinic phase BiVO4Energy gap is about 2.4eV, and catalytic performance is best.The pucherite of monoclinic system With excellent visible light response activity, its lattice parameter is:A=5.185, b=5.137, c=11.748, monoclinic system BiVO4Conduction band it is main by V3d, O2pAnd Bi6pThree kinds of orbital hybridizations are formed, and this electronic structure makes photo-generated carrier easily migrate To the surface of semiconductor so that photochemical catalyst is easier light-catalyzed reaction under visible light;The width of valence band is increased, from And the mobile space of photohole is increased, the recombination rate of photo-generate electron-hole is reduced, so as to be more beneficial for photocatalytic process Effectively carry out.Secondly the exposure of high activity crystal face also has a great impact to its performance, monoclinic phase BiVO4(040) crystal face There is provided polyatom BiVO4Center, it may be possible to which the origin that oxygen activity point is produced in photocatalysis is particularly helpful to catalyst surface high activity The generation of oxidation activity species OH, so as to improve degradation rate.However, (040) crystal face BiVO4There is also photo-generate electron-hole To the low problem of separation rate, so as to cause the reduction of its photocatalytic activity.Therefore many scholars are modified to strengthen by it Its visible light-responded ability, such as form photocatalysis hetero-junctions, doping precious metal and be modified, add rare earth element to be modified And add the methods such as carbon.For example, Ji Tianhao et al. is received as presoma with titanate, using different mixed method legal systems For the TiO for changing2/BiVO4Nano composite material, it is obvious red that ultraviolet spectra test result shows that the absorption of compound is generated Move, show that under visible light, the photocatalytic activity of composite is far above using the experiment of methylene blue as simulation degraded substrate Pure BiVO4And TiO2Crystal.Suo Jing et al. combines hydro-thermal method and infusion process, with nonionic surfactant P123 as template Agent, is prepared for the modified BiVO of Cu under the conditions of 200 DEG C4- Cu composites, as a result find, compound morphosis is good, inhale There is obvious red shift in take-up and absorption intensity is increased a lot.Chen Ying etc. combines hydro-thermal method-infusion process-roasting method in pure BiVO4 The area load Co elements of catalyst, experimental result shows that after reaction 1h, photocatalysis denitrification percent reaches 83.59%, and Co is most Good load capacity is 4%, and reaction temperature is 400 DEG C, and roasting time is 1h.
RGO is a kind of two-dimentional carbon material of layer structure, and band gap is almost nil, and electric conductivity is high, and specific surface area is big, energy of adsorption Power is strong, as good catalyst promoter, and can effectively facilitate the separative efficiency of photo-generated carrier, greatly strengthens photocatalysis The activity and stability of material.g-C3N4The advantages of due to energy gap about 2.7eV, good chemical stability, preparation method is simple, is received To extensive concern.
So far, g-C3N4/ RGO/ (040) crystal face BiVO4There is not been reported for the work of the preparation method of compound, There is no patent and document report g-C3N4/ RGO/ (040) crystal face BiVO4The preparation method of compound.
The content of the invention
It is an object of the invention to provide a kind of carbonitride/Graphene/(040) crystal face pucherite hetero-junctions and its preparation side Method and application, three-phase composite is carried out using ultrasonic method, and technological process is simple compared with other chemical synthesis, has successfully synthesized g- C3N4/ RGO/ (040) crystal face BiVO4Hetero-junctions, improves BiVO4Photocatalysis performance.
In order to achieve the above object, the present invention is adopted the following technical scheme that:
A kind of preparation method of carbonitride/Graphene/(040) crystal face pucherite hetero-junctions, comprises the following steps:
Step 1, by Bi (NO3)3·5H2O is dissolved in dilute HNO3In, stir to clarify, it is subsequently adding NH4VO3, stirring 50~ 80min, forms precursor liquid A;Wherein Bi (NO3)3·5H2O and NH4VO3Mol ratio be 1:1;
Step 2, by precursor liquid A at 70~90 DEG C 13~16h of hydro-thermal reaction, (040) crystal face BiVO is obtained4Precipitation, will The washing of precipitate, drying, obtain (040) crystal face BiVO4Powder;
Step 3, graphene oxide is dissolved in the ethanol water that volume fraction is 40~60%, and ultrasonic disperse is simultaneously stirred Uniformly, dust technology is subsequently adding, ultrasonic disperse simultaneously stirs, adds NaOH solution, ultrasonic disperse simultaneously stirs, obtains GO solution;Wherein HNO in graphene oxide and the dust technology for adding3And in NaOH solution NaOH mol ratio for (0.35~ 0.7):1:1;
Step 4, (040) crystal face BiVO that will be prepared4Powder is added in GO solution, and 30~60min of stirring forms forerunner Liquid B, by precursor liquid B at 150~180 DEG C 80~120min of hydro-thermal reaction, obtain RGO/ (040) crystal face BiVO4Precipitation, by this Washing of precipitate, drying, obtain RGO/ (040) crystal face BiVO4Powder;(040) crystal face BiVO for wherein adding4Powder and GO solution The mass ratio of middle GO is (3~5):1;
Step 5, by CO (NH2)2530~580 DEG C are raised to from room temperature, 2~4h is calcined, g-C is obtained3N4Powder;
Step 6, under agitation, by obtained g-C3N4Powder is dissolved in deionized water, and stirring, ultrasound are equal to mixing It is even, obtain g-C3N4Solution;
Step 7, under agitation, RGO/ (040) crystal face BiVO that will be prepared4Powder adds g-C3N4In solution, stir 30~60min is mixed, precursor liquid C is obtained, wherein RGO/ (040) crystal face BiVO for adding4Powder and g-C3N4G-C in solution3N4's Mass ratio is (2~8):(8~2);
Step 8, ultrasonic reaction is carried out by precursor liquid C at room temperature, will be obtained after washing of precipitate, the drying of reacting generation Carbonitride/Graphene/(040) crystal face pucherite hetero-junctions.
Bi in precursor liquid A in the step 13+Concentration be 0.1~0.3mol/L, dilute HNO3Concentration be 1~3mol/L.
Drying in the step 2, step 4 and step 8 is in 60~80 DEG C of 8~10h of freeze-day with constant temperature.
The concentration of graphene oxide is 0.01~0.02g/mL, dust technology and NaOH solution in GO solution in the step 3 Concentration be 2~4mol/L, the addition speed of dust technology and NaOH solution is 1~3 drop/sec.
Each ultrasonic disperse and stirred in the step 3, be first at 40~60 DEG C with the power of 80~100W 60~80min of ultrasonic disperse, is stirred for 10~30min.
Heating rate in the step 5 is 8~12 DEG C/min;
G-C in the step 63N4The concentration of solution is 0.01~0.03g/mL.
The ultrasonic reaction time in the step 8 is 1~2h, and ultrasonic power is 80~100W.
The obtained nitridation carbon graphite of the preparation method of described carbonitride/Graphene/(040) crystal face pucherite hetero-junctions Alkene/(040) crystal face pucherite hetero-junctions, BiVO in the carbonitride/Graphene/(040) crystal face pucherite hetero-junctions4Structure It is monoclinic phase, BiVO in carbonitride/Graphene/(040) crystal face pucherite hetero-junctions4, RGO and g-C3N4Three-phase coexistence, forms Heterojunction structure, and BiVO4, RGO and g-C3N4Energy level be mutually matched.
Charge transfer resistance R after the carbonitride/Graphene/(040) crystal face pucherite hetero-junctions illumination is than pure (040) Crystal face BiVO4The R values of powder reduce 3.71 times, and carbonitride/Graphene/(040) crystal face pucherite hetero-junctions shines in visible ray Under degradation rate be pure (040) crystal face BiVO46.4 times of powder.
Described carbonitride/Graphene/(040) crystal face pucherite hetero-junctions is in terms of photocatalysis degradation organic contaminant Using.
Compared with prior art, the invention has the advantages that:
The preparation method of carbonitride/Graphene/(040) crystal face pucherite hetero-junctions that the present invention is provided, first passes through hydro-thermal Method synthesis (040) crystal face BiVO4Powder, and g-C is obtained by calcination method3N4Powder, then by hydro-thermal method by (040) crystal face BiVO4Powder is combined with graphene oxide (GO), and GO is reduced into Graphene (RGO) in recombination process, obtains RGO/ (040) crystal face BiVO4Powder, g-C is carried out finally by ultrasonic method3N4Powder and RGO/ (040) crystal face BiVO4Being combined for powder, has synthesized g- C3N4/ RGO/ (040) crystal face BiVO4Hetero-junctions.The method ultrasonic reaction time is short, and technological process is simple.Ultrasonic method and other sides Method is cheap compared to having preparation process is simple, can directly obtain the powder of well-crystallized, it is easy to which adjusting seed size size etc. is excellent Point.Due to BiVO4And g-C3N4Band structure and crystal plane structure match very much, light induced electron can be from g-C3N4Conduction band transfer To BiVO4Conduction band, and photohole can be from BiVO4Valency be transferred to g-C3N4Valence band, thus be conducive to light induced electron and Efficiently separating and migrating for hole, improves the concentration of carrier;RGO excellent electric conductivity increased the concentration of carrier, effectively Improve BiVO4The separative efficiency of photo-generated carrier, so that its photocatalysis performance strengthens;g-C3N4, RGO and (040) crystal face BiVO4Hetero-junctions is formed between powder three, the formation of hetero-junctions improves the separation rate of photo-generate electron-hole pair, Neng Gouti (040) crystal face BiVO high4Photocatalysis performance.
In carbonitride/Graphene/(040) crystal face pucherite hetero-junctions prepared by the present invention, RGO and g-C3N4Introducing simultaneously Without change BiVO4Thing phase, be still monoclinic phase, crystal development is complete, and the exposure of (040) crystal face is good, and structural stability is good. RGO good electric conductivity increased the avtive spot of catalyst surface, effectively facilitate the migration of light induced electron, suppress electronics-sky Cave pair is again combined.G-C after compound3N4, RGO and (040) crystal face BiVO4Three-phase coexistence, and three-phase syntrophism, and keep each From growth tendency, between three have synergy.g-C3N4, RGO and (040) crystal face BiVO4Between form hetero-junctions and Mutual level-density parameter, the formation of heterojunction structure effectively promotes the multiple again of the inhibition of metastasis electron-hole pair of light induced electron Close, be conducive to the separation in light induced electron and hole, be conducive to the conduction of electronics, effectively facilitate the separative efficiency of photo-generated carrier, So as to improve photocatalytic activity and stability, improve photoresponse intensity, photoresponse scope becomes big, photo-generate electron-hole pair Separation rate increase, the separation rate of photo-generated carrier is improved, so as to improve (040) crystal face BiVO4Photocatalysis performance.
Further, the obtained g-C of the present invention3N4/ RGO/ (040) crystal face BiVO4Electric charge transfer electricity after hetero-junctions illumination Resistance R is 1.71 × 106Ω, and pure (040) crystal face BiVO4The R of powder is 6.35 × 106Ω, g-C after being combined3N4/RGO/(040) Crystal face BiVO4Purer (040) the crystal face BiVO of charge transfer resistance R values of hetero-junctions4Powder reduces about 3.71 times, illustrates multiple G-C after conjunction3N4, RGO and (040) crystal face BiVO4Between formed heterojunction structure be effectively promoted BiVO4Photoproduction in electrode The transmission and separation of carrier, improve the concentration of carrier.And g-C3N4/ RGO/ (040) crystal face BiVO4Hetero-junctions is can Degradation rate is up to more than 96%, and pure (040) crystal face BiVO after seeing illumination 60min4Powder is in visible ray according to the degraded after 60min Rate is only 15%, g-C after being combined3N4/ (040) crystal face BiVO4Purer (040) the crystal face BiVO of degradation rate of hetero-junctions4Powder is improved About 6.4 times, greatly improve (040) crystal face BiVO4Photocatalysis performance.
Brief description of the drawings
Fig. 1 is g-C prepared by the present invention3N4/ RGO/ (040) crystal face BiVO4The XRD diffracting spectrums of hetero-junctions;
Fig. 2 is g-C prepared by the present invention3N4/ RGO/ (040) crystal face BiVO4The FI-IR collection of illustrative plates of hetero-junctions;
Fig. 3 is g-C prepared by the present invention3N4/ RGO/ (040) crystal face BiVO4The ac impedance spectroscopy of hetero-junctions;
Fig. 4 is g-C prepared by the present invention3N4/ RGO/ (040) crystal face BiVO4The photocatalytic degradation collection of illustrative plates of hetero-junctions.
Specific embodiment
The present invention is described further with currently preferred specific embodiment below in conjunction with the accompanying drawings, raw material is analysis It is pure.
Embodiment 1:
Step 1, by 6mmoL Bi (NO3)3·5H2O is dissolved in 1mol/L's with uniform slow speed under agitation HNO3In solution, stirring 30min is slowly added to 6mmoL NH after solution is clarified4VO3, 60min is stirred, precursor liquid A is formed, it is preceding Drive Bi in liquid A3+Concentration be 0.2mol/L;
Step 2, precursor liquid A is obtained (040) crystal face BiVO after hydro-thermal reaction 15h at 80 DEG C4Precipitation, the precipitation is through alcohol After washing, washing, in 70 DEG C of freeze-day with constant temperature 9h, (040) crystal face BiVO is obtained4Powder;
Step 3, it is 50% that the graphene oxide (GO) that the Hummers methods of improvement will be used to prepare is dissolved in volume fraction In ethanol water, 60min is disperseed with the power ultrasonic of 100W at 50 DEG C, stir 10min, then added with 1 drop/sec of speed The HNO of 2mol/L3, with the power ultrasonic 60min of 100W at 50 DEG C, 10min is stirred, then 2mol/L is added with 1 drop/sec of speed NaOH solution, with the power ultrasonic 60min of 100W at 50 DEG C, stir 10min, obtain GO solution;Wherein graphene oxide with plus HNO in the dust technology for entering3And the mol ratio of NaOH is 0.5 in NaOH solution:1:The concentration of graphene oxide in 1, GO solution It is 0.02g/mL;
Step 4, (040) crystal face BiVO that will be prepared4Powder is added in GO solution, and stirring 60min forms precursor liquid B, By precursor liquid B at 160 DEG C hydro-thermal reaction 100min, obtain RGO/ (040) crystal face BiVO4Precipitation, will react generation precipitation according to It is secondary to be washed with absolute ethyl alcohol and deionized water, then 10h is dried at 70 DEG C, obtain RGO/ (040) crystal face BiVO4Powder;Wherein (040) crystal face BiVO for adding4Powder is 4 with the mass ratio of GO in GO solution:1;
Step 5, by CO (NH2)2550 DEG C are raised to the heating rate of 10 DEG C/min, calcine 3h, be obtained faint yellow and in many Poroid g-C3N4Powder;
Step 6, under agitation by obtained g-C3N4Powder is dissolved in deionized water, stirring, ultrasonic disperse to g- C3N4Solution colour is thin out, it is uniform untill, obtain the g-C that concentration is 0.02g/mL3N4Solution;
Step 7, under magnetic stirring, RGO/ (040) crystal face BiVO that will be prepared4Powder is with 2:8 mass ratio is slow Add g-C3N4In solution, 60min is stirred, obtain precursor liquid C;
Step 8, by precursor liquid C ultrasonic disperse 1h at room temperature, ultrasonic power is 100W, then will react the precipitation of generation Washed with absolute ethyl alcohol and deionized water successively, 9h is dried at 70 DEG C, obtain g-C3N4/ RGO/ (040) crystal face BiVO4It is heterogeneous Knot.
Embodiment 2:
Step 1, by 6mmoL Bi (NO3)3·5H2O is dissolved in 1.8mol/L's with uniform slow speed under agitation HNO3In solution, stirring 30min is slowly added to 6mmoL NH after solution is clarified4VO3, 55min is stirred, precursor liquid A is formed, it is preceding Drive Bi in liquid A3+Concentration be 0.18mol/L;
Step 2, precursor liquid A is obtained (040) crystal face BiVO after hydro-thermal reaction 13.5h at 78 DEG C4Precipitation, the precipitation is through alcohol After washing, washing, in 72 DEG C of freeze-day with constant temperature 9h, (040) crystal face BiVO is obtained4Powder;
Step 3, the graphene oxide that will be prepared (GO) is dissolved in the ethanol water that volume fraction is 40%, at 40 DEG C 72min is disperseed with the power ultrasonic of 80W, 15min is stirred, the HNO of 3mol/L is then added with 2 drops/sec of speed3, at 40 DEG C With the power ultrasonic 72min of 80W, stir 15min, then the NaOH solution of 3mol/L added with 2 drops/sec of speed, at 40 DEG C with The power ultrasonic 72min of 80W, stirs 15min, obtains GO solution;Wherein HNO in graphene oxide and the dust technology for adding3And The mol ratio of NaOH is 0.35 in NaOH solution:1:The concentration of graphene oxide is 0.01g/mL in 1, GO solution;
Step 4, (040) crystal face BiVO that will be prepared4Powder is added in GO solution, and stirring 50min forms precursor liquid B, By precursor liquid B at 170 DEG C hydro-thermal reaction 90min, obtain RGO/ (040) crystal face BiVO4Precipitation, by the precipitation for reacting generation successively Washed with absolute ethyl alcohol and deionized water, then 9h is dried at 72 DEG C, obtain RGO/ (040) crystal face BiVO4Powder;Wherein add (040) crystal face BiVO4Powder is 3 with the mass ratio of GO in GO solution:1;
Step 5, by CO (NH2)2530 DEG C are raised to the heating rate of 10.5 DEG C/min, 4h is calcined, are obtained faint yellow and are in Cavernous g-C3N4Powder;
Step 6, under agitation by obtained g-C3N4Powder is dissolved in deionized water, stirring, ultrasonic disperse to g- C3N4Solution colour is thin out, it is uniform untill, obtain the g-C that concentration is 0.01g/mL3N4Solution;
Step 7, under magnetic stirring, RGO/ (040) crystal face BiVO that will be prepared4Powder is with 4:6 mass ratio is slow Add g-C3N4In solution, 40min is stirred, obtain precursor liquid C;
Step 8, by precursor liquid C ultrasonic disperse 1.2h at room temperature, ultrasonic power is 90W, then will react the heavy of generation Shallow lake is washed with absolute ethyl alcohol and deionized water successively, and 9h is dried at 72 DEG C, obtains g-C3N4/ RGO/ (040) crystal face BiVO4It is different Matter knot.
Embodiment 3:
Step 1, by 6mmoL Bi (NO3)3·5H2O is dissolved in 1.2mol/L's with uniform slow speed under agitation HNO3In solution, stirring 30min is slowly added to 6mmoL NH after solution is clarified4VO3, 75min is stirred, precursor liquid A is formed, it is preceding Drive Bi in liquid A3+Concentration be 0.22mol/L;
Step 2, precursor liquid A is obtained (040) crystal face BiVO after hydro-thermal reaction 14.5h at 82 DEG C4Precipitation, the precipitation is through alcohol After washing, washing, in 68 DEG C of freeze-day with constant temperature 9h, (040) crystal face BiVO is obtained4Powder;
Step 3, the graphene oxide that will be prepared (GO) is dissolved in the ethanol water that volume fraction is 45%, at 45 DEG C 75min is disperseed with the power ultrasonic of 90W, 20min is stirred, the HNO of 4mol/L is then added with 3 drops/sec of speed3, at 45 DEG C With the power ultrasonic 75min of 90W, stir 20min, then the NaOH solution of 4mol/L added with 3 drops/sec of speed, at 45 DEG C with The power ultrasonic 75min of 90W, stirs 20min, obtains GO solution;Wherein HNO in graphene oxide and the dust technology for adding3And The mol ratio of NaOH is 0.7 in NaOH solution:1:The concentration of graphene oxide is 0.014g/mL in 1, GO solution;
Step 4, (040) crystal face BiVO that will be prepared4Powder is added in GO solution, and stirring 40min forms precursor liquid B, By precursor liquid B at 180 DEG C hydro-thermal reaction 80min, obtain RGO/ (040) crystal face BiVO4Precipitation, by the precipitation for reacting generation successively Washed with absolute ethyl alcohol and deionized water, then 9h is dried at 68 DEG C, obtain RGO/ (040) crystal face BiVO4Powder;Wherein add (040) crystal face BiVO4Powder is 5 with the mass ratio of GO in GO solution:1;
Step 5, by CO (NH2)2540 DEG C are raised to the heating rate of 9.5 DEG C/min, 3.5h is calcined, are obtained faint yellow and are in Cavernous g-C3N4Powder;
Step 6, under agitation by obtained g-C3N4Powder is dissolved in deionized water, stirring, ultrasonic disperse to g- C3N4Solution colour is thin out, it is uniform untill, obtain the g-C that concentration is 0.03g/mL3N4Solution;
Step 7, under magnetic stirring, RGO/ (040) crystal face BiVO that will be prepared4Powder is with 8:2 mass ratio is slow Add g-C3N4In solution, 50min is stirred, obtain precursor liquid C;
Step 8, by precursor liquid C ultrasonic disperse 1.4h at room temperature, ultrasonic power is 95W, then will react the heavy of generation Shallow lake is washed with absolute ethyl alcohol and deionized water successively, and 9h is dried at 68 DEG C, obtains g-C3N4/ RGO/ (040) crystal face BiVO4It is different Matter knot.
Embodiment 4:
Step 1, by 6mmoL Bi (NO3)3·5H2O is dissolved in 1.5mol/L's with uniform slow speed under agitation HNO3In solution, stirring 30min is slowly added to 6mmoL NH after solution is clarified4VO3, 50min is stirred, precursor liquid A is formed, it is preceding Drive Bi in liquid A3+Concentration be 0.25mol/L;
Step 2, precursor liquid A is obtained (040) crystal face BiVO after hydro-thermal reaction 14h at 85 DEG C4Precipitation, the precipitation is through alcohol After washing, washing, in 75 DEG C of freeze-day with constant temperature 8.5h, (040) crystal face BiVO is obtained4Powder;
Step 3, the graphene oxide that will be prepared (GO) is dissolved in the ethanol water that volume fraction is 55%, at 55 DEG C 68min is disperseed with the power ultrasonic of 85W, 25min is stirred, the HNO of 2.5mol/L is then added with 1.5 drops/sec of speed3, 55 With the power ultrasonic 68min of 85W at DEG C, 25min is stirred, then the NaOH solution of 2.5mol/L is added with 1.5 drops/sec of speed, With the power ultrasonic 68min of 85W at 55 DEG C, 25min is stirred, obtain GO solution;Wherein in graphene oxide and the dust technology for adding HNO3And the mol ratio of NaOH is 0.55 in NaOH solution:1:The concentration of graphene oxide is 0.015g/mL in 1, GO solution;
Step 4, (040) crystal face BiVO that will be prepared4Powder is added in GO solution, and stirring 55min forms precursor liquid B, By precursor liquid B at 150 DEG C hydro-thermal reaction 120min, obtain RGO/ (040) crystal face BiVO4Precipitation, will react generation precipitation according to It is secondary to be washed with absolute ethyl alcohol and deionized water, then 8.5h is dried at 75 DEG C, obtain RGO/ (040) crystal face BiVO4Powder;Wherein (040) crystal face BiVO for adding4Powder is 3.8 with the mass ratio of GO in GO solution:1;
Step 5, by CO (NH2)2560 DEG C are raised to the heating rate of 8 DEG C/min, calcine 2.8h, be obtained faint yellow and in many Poroid g-C3N4Powder;
Step 6, under agitation by obtained g-C3N4Powder is dissolved in deionized water, stirring, ultrasonic disperse to g- C3N4Solution colour is thin out, it is uniform untill, obtain the g-C that concentration is 0.018g/mL3N4Solution;
Step 7, under magnetic stirring, RGO/ (040) crystal face BiVO that will be prepared4Powder is with 3:7 mass ratio is slow Add g-C3N4In solution, 30min is stirred, obtain precursor liquid C;
Step 8, by precursor liquid C ultrasonic disperse 1.6h at room temperature, ultrasonic power is 85W, then will react the heavy of generation Shallow lake is washed with absolute ethyl alcohol and deionized water successively, and 8.5h is dried at 75 DEG C, obtains g-C3N4/ RGO/ (040) crystal face BiVO4 Hetero-junctions.
Embodiment 5:
Step 1, by 6mmoL Bi (NO3)3·5H2O is dissolved in 2.5mol/L's with uniform slow speed under agitation HNO3In solution, stirring 30min is slowly added to 6mmoL NH after solution is clarified4VO3, 70min is stirred, precursor liquid A is formed, it is preceding Drive Bi in liquid A3+Concentration be 0.15mol/L;
Step 2, precursor liquid A is obtained (040) crystal face BiVO after hydro-thermal reaction 15.5h at 75 DEG C4Precipitation, the precipitation is through alcohol After washing, washing, in 65 DEG C of freeze-day with constant temperature 9.5h, (040) crystal face BiVO is obtained4Powder;
Step 3, the graphene oxide that will be prepared (GO) is dissolved in the ethanol water that volume fraction is 60%, at 60 DEG C 70min is disperseed with the power ultrasonic of 95W, 30min is stirred, the HNO of 3.5mol/L is then added with 2.5 drops/sec of speed3, 60 With the power ultrasonic 70min of 95W at DEG C, 30min is stirred, then the NaOH solution of 3.5mol/L is added with 2.5 drops/sec of speed, With the power ultrasonic 70min of 95W at 60 DEG C, 30min is stirred, obtain GO solution;Wherein in graphene oxide and the dust technology for adding HNO3And the mol ratio of NaOH is 0.4 in NaOH solution:1:The concentration of graphene oxide is 0.016g/mL in 1, GO solution;
Step 4, (040) crystal face BiVO that will be prepared4Powder is added in GO solution, and stirring 45min forms precursor liquid B, By precursor liquid B at 155 DEG C hydro-thermal reaction 110min, obtain RGO/ (040) crystal face BiVO4Precipitation, will react generation precipitation according to It is secondary to be washed with absolute ethyl alcohol and deionized water, then 9.5h is dried at 65 DEG C, obtain RGO/ (040) crystal face BiVO4Powder;Wherein (040) crystal face BiVO for adding4Powder is 3.5 with the mass ratio of GO in GO solution:1;
Step 5, by CO (NH2)2570 DEG C are raised to the heating rate of 9 DEG C/min, calcine 2.5h, be obtained faint yellow and in many Poroid g-C3N4Powder;
Step 6, under agitation by obtained g-C3N4Powder is dissolved in deionized water, stirring, ultrasonic disperse to g- C3N4Solution colour is thin out, it is uniform untill, obtain the g-C that concentration is 0.015g/mL3N4Solution;
Step 7, under magnetic stirring, RGO/ (040) crystal face BiVO that will be prepared4Powder is with 7:3 mass ratio is slow Add g-C3N4In solution, 35min is stirred, obtain precursor liquid C;
Step 8, by precursor liquid C ultrasonic disperse 1.8h at room temperature, ultrasonic power is 80W, then will react the heavy of generation Shallow lake is washed with absolute ethyl alcohol and deionized water successively, and 10h is dried at 60 DEG C, obtains g-C3N4/ RGO/ (040) crystal face BiVO4It is different Matter knot.
Embodiment 6
Step 1, by 6mmoL Bi (NO3)3·5H2O is dissolved in 2mol/L's with uniform slow speed under agitation HNO3In solution, stirring 30min is slowly added to 6mmoL NH after solution is clarified4VO3, 80min is stirred, precursor liquid A is formed, it is preceding Drive Bi in liquid A3+Concentration be 0.1mol/L;
Step 2, precursor liquid A is obtained (040) crystal face BiVO after hydro-thermal reaction 16h at 70 DEG C4Precipitation, the precipitation is through alcohol After washing, washing, in 60 DEG C of freeze-day with constant temperature 10h, (040) crystal face BiVO is obtained4Powder;
Step 3, the graphene oxide that will be prepared (GO) is dissolved in the ethanol water that volume fraction is 52%, at 52 DEG C 65min is disperseed with the power ultrasonic of 100W, 12min is stirred, the HNO of 2.2mol/L is then added with 1.2 drops/sec of speed3, 52 With the power ultrasonic 65min of 100W at DEG C, 12min is stirred, then the NaOH solution of 2.2mol/L is added with 1.2 drops/sec of speed, With the power ultrasonic 65min of 100W at 52 DEG C, 12min is stirred, obtain GO solution;Wherein in graphene oxide and the dust technology for adding HNO3And the mol ratio of NaOH is 0.6 in NaOH solution:1:The concentration of graphene oxide is 0.012g/mL in 1, GO solution;
Step 4, (040) crystal face BiVO that will be prepared4Powder is added in GO solution, and stirring 35min forms precursor liquid B, By precursor liquid B at 165 DEG C hydro-thermal reaction 95min, obtain RGO/ (040) crystal face BiVO4Precipitation, by the precipitation for reacting generation successively Washed with absolute ethyl alcohol and deionized water, then 10h is dried at 60 DEG C, obtain RGO/ (040) crystal face BiVO4Powder;Wherein plus (040) crystal face BiVO for entering4Powder is 4.5 with the mass ratio of GO in GO solution:1;
Step 5, by CO (NH2)2580 DEG C are raised to the heating rate of 11 DEG C/min, calcine 2h, be obtained faint yellow and in many Poroid g-C3N4Powder;
Step 6, under agitation by obtained g-C3N4Powder is dissolved in deionized water, stirring, ultrasonic disperse to g- C3N4Solution colour is thin out, it is uniform untill, obtain the g-C that concentration is 0.025g/mL3N4Solution;
Step 7, under magnetic stirring, RGO/ (040) crystal face BiVO that will be prepared4Powder is with 5:5 mass ratio is slow Add g-C3N4In solution, 45min is stirred, obtain precursor liquid C;
Step 8, by precursor liquid C ultrasonic disperse 1.5h at room temperature, ultrasonic power is 100W, then will react the heavy of generation Shallow lake is washed with absolute ethyl alcohol and deionized water successively, and 9.5h is dried at 65 DEG C, obtains g-C3N4/ RGO/ (040) crystal face BiVO4 Hetero-junctions.
Embodiment 7
Step 1, by 6mmoL Bi (NO3)3·5H2O is dissolved in 3mol/L's with uniform slow speed under agitation HNO3In solution, stirring 30min is slowly added to 6mmoL NH after solution is clarified4VO3, 65min is stirred, precursor liquid A is formed, it is preceding Drive Bi in liquid A3+Concentration be 0.3mol/L;
Step 2, precursor liquid A is obtained (040) crystal face BiVO after hydro-thermal reaction 13h at 90 DEG C4Precipitation, the precipitation is through alcohol After washing, washing, in 80 DEG C of freeze-day with constant temperature 8h, (040) crystal face BiVO is obtained4Powder;
Step 3, the graphene oxide that will be prepared (GO) is dissolved in the ethanol water that volume fraction is 48%, at 48 DEG C 80min is disperseed with the power ultrasonic of 90W, 18min is stirred, the HNO of 2.8mol/L is then added with 1.8 drops/sec of speed3, 48 With the power ultrasonic 80min of 90W at DEG C, 18min is stirred, then the NaOH solution of 2.8mol/L is added with 1.8 drops/sec of speed, With the power ultrasonic 80min of 90W at 48 DEG C, 18min is stirred, obtain GO solution;Wherein in graphene oxide and the dust technology for adding HNO3And the mol ratio of NaOH is 0.45 in NaOH solution:1:The concentration of graphene oxide is 0.018g/mL in 1, GO solution;
Step 4, (040) crystal face BiVO that will be prepared4Powder is added in GO solution, and stirring 30min forms precursor liquid B, By precursor liquid B at 175 DEG C hydro-thermal reaction 85min, obtain RGO/ (040) crystal face BiVO4Precipitation, by the precipitation for reacting generation successively Washed with absolute ethyl alcohol and deionized water, then 8h is dried at 80 DEG C, obtain RGO/ (040) crystal face BiVO4Powder;Wherein add (040) crystal face BiVO4Powder is 4.2 with the mass ratio of GO in GO solution:1;
Step 5, by CO (NH2)2555 DEG C are raised to the heating rate of 12 DEG C/min, 3.2h is calcined, are obtained faint yellow and are in Cavernous g-C3N4Powder;
Step 6, under agitation by obtained g-C3N4Powder is dissolved in deionized water, stirring, ultrasonic disperse to g- C3N4Solution colour is thin out, it is uniform untill, obtain the g-C that concentration is 0.022g/mL3N4Solution;
Step 7, under magnetic stirring, RGO/ (040) crystal face BiVO that will be prepared4Powder is with 6:4 mass ratio is slow Add g-C3N4In solution, 55min is stirred, obtain precursor liquid C;
Step 8, by precursor liquid C ultrasonic disperse 2h at room temperature, ultrasonic power is 90W, then will react the precipitation of generation Washed with absolute ethyl alcohol and deionized water successively, 8h is dried at 80 DEG C, obtain g-C3N4/ RGO/ (040) crystal face BiVO4It is heterogeneous Knot.
Fig. 1 is g-C prepared by the present invention3N4/ RGO/ (040) crystal face BiVO4The XRD of hetero-junctions, it can be seen that RGO And g-C3N4Introducing do not have change BiVO4Thing phase, BiVO4Still it is monoclinic phase.
Fig. 2 is g-C prepared by the present invention3N4/ RGO/ (040) crystal face BiVO4The FT-IR figures of hetero-junctions, it can be seen that GO it is original 1050,1220,1620,1730cm-1The absworption peak at place disappears, and still retains 1540cm-1And 3450cm-1Place absorbs Peak, this explanation GO has been reduced to RGO, so as to understand to be successfully prepared out g-C3N4/ RGO/ (040) crystal face BiVO4Hetero-junctions.
Fig. 3 is g-C prepared by the present invention3N4/ RGO/ (040) crystal face BiVO4The AC impedance figure of hetero-junctions, in EIS The radius size of Nyquist curves reflects the size of electrode surface reaction rate and the size of electrode resistance.Radius is bigger Illustrate that electrode surface reaction rate is smaller, charge transfer resistance is bigger.It can be seen that g-C3N4/ RGO/ (040) crystal face BiVO4 Hetero-junctions and (040) crystal face BiVO4Each Nyquist null circle arc radius illumination of powder is front and rear to there is significant change, illumination Radius of curvature afterwards is significantly less than the sample of subdued light conditions.Wherein charge transfer resistance (R) is main research object, from table 1 Understand RGO/ (040) crystal face BiVO after illumination4R be 3.43 × 106Ω, (040) crystal face BiVO4The R of powder is 6.35 × 106 Ω, R value reduce about 2 times, g-C3N4/ RGO/ (040) crystal face BiVO4The R of hetero-junctions is 1.71 × 106Ω, than (040) crystal face BiVO4The R values of powder reduce about 3.71 times, show g-C3N4, RGO and (040) crystal face BiVO4Between formed hetero-junctions knot Structure has been effectively promoted BiVO4The transmission and separation of photo-generated carrier, improve the concentration of carrier in electrode.
G-C prepared by the present invention of table 13N4/ RGO/ (040) crystal face BiVO4The ZsimpWin fitting data of hetero-junctions
Fig. 4 is g-C prepared by the present invention3N4/ RGO/ (040) crystal face BiVO4The degraded collection of illustrative plates of hetero-junctions rhodamine B degradation, It can be seen that g-C3N4/ RGO/ (040) crystal face BiVO4Hetero-junctions visible ray shine 60min after degradation rate up to more than 96%, RGO/ (040) crystal face BiVO4The degradation rate of powder is only 15%, pure (040) crystal face BiVO4The degradation rate of powder is only 15%, g- C3N4/ RGO/ (040) crystal face BiVO4The degradation rate of hetero-junctions is than RGO/ (040) crystal face BiVO4Powder and pure (040) crystal face BiVO4 The degradation rate of powder improves 6.4 times, greatly improves (040) crystal face BiVO4Photocatalysis performance.
Above said content is to combine specific preferred embodiment further description made for the present invention, is not All or unique implementation method, those of ordinary skill in the art by read description of the invention and to technical solution of the present invention Any equivalent conversion taken, is claim of the invention and is covered.

Claims (10)

1. the preparation method of a kind of carbonitride/Graphene/(040) crystal face pucherite hetero-junctions, it is characterised in that including following step Suddenly:
Step 1, by Bi (NO3)3·5H2O is dissolved in dilute HNO3In, stir to clarify, it is subsequently adding NH4VO3, 50~80min is stirred, Form precursor liquid A;Wherein Bi (NO3)3·5H2O and NH4VO3Mol ratio be 1:1;
Step 2, by precursor liquid A at 70~90 DEG C 13~16h of hydro-thermal reaction, (040) crystal face BiVO is obtained4Precipitation, this is precipitated Wash, dry, obtain (040) crystal face BiVO4Powder;
Step 3, graphene oxide is dissolved in the ethanol water that volume fraction is 40~60%, and ultrasonic disperse simultaneously stirs equal It is even, dust technology is subsequently adding, ultrasonic disperse simultaneously stirs, and adds NaOH solution, and ultrasonic disperse simultaneously stirs, and obtains GO Solution;Wherein HNO in graphene oxide and the dust technology for adding3And in NaOH solution NaOH mol ratio for (0.35~ 0.7):1:1;
Step 4, (040) crystal face BiVO that will be prepared4Powder is added in GO solution, and 30~60min of stirring forms precursor liquid B, will Precursor liquid B 80~120min of hydro-thermal reaction at 150~180 DEG C, obtain RGO/ (040) crystal face BiVO4Precipitation, the precipitation is washed Wash, dry, obtain RGO/ (040) crystal face BiVO4Powder;(040) crystal face BiVO for wherein adding4Powder and GO in GO solution Mass ratio is (3~5):1;
Step 5, by CO (NH2)2530~580 DEG C are raised to from room temperature, 2~4h is calcined, g-C is obtained3N4Powder;
Step 6, under agitation, by obtained g-C3N4Powder is dissolved in deionized water, and stirring, ultrasound are obtained to well mixed To g-C3N4Solution;
Step 7, under agitation, RGO/ (040) crystal face BiVO that will be prepared4Powder adds g-C3N4In solution, stirring 30 ~60min, obtains precursor liquid C, wherein RGO/ (040) crystal face BiVO for adding4Powder and g-C3N4G-C in solution3N4Quality Than being (2~8):(8~2);
Step 8, ultrasonic reaction is carried out by precursor liquid C at room temperature, will be nitrogenized after washing of precipitate, the drying of reacting generation Carbon graphite alkene/(040) crystal face pucherite hetero-junctions.
2. the preparation method of carbonitride/Graphene according to claim 1/(040) crystal face pucherite hetero-junctions, its feature It is, Bi in precursor liquid A in the step 13+Concentration be 0.1~0.3mol/L, dilute HNO3Concentration be 1~3mol/L.
3. the preparation method of carbonitride/Graphene according to claim 1/(040) crystal face pucherite hetero-junctions, its feature It is that the drying in the step 2, step 4 and step 8 is in 60~80 DEG C of 8~10h of freeze-day with constant temperature.
4. the preparation method of carbonitride/Graphene according to claim 1/(040) crystal face pucherite hetero-junctions, its feature Be that the concentration of graphene oxide is 0.01~0.02g/mL in GO solution in the step 3, dust technology and NaOH solution it is dense It is 2~4mol/L to spend, and the addition speed of dust technology and NaOH solution is 1~3 drop/sec.
5. the preparation method of carbonitride/Graphene according to claim 1/(040) crystal face pucherite hetero-junctions, its feature It is each ultrasonic disperse and to be stirred in the step 3, is first at 40~60 DEG C with the power ultrasonic of 80~100W 60~80min of dispersion, is stirred for 10~30min.
6. the preparation method of carbonitride/Graphene according to claim 1/(040) crystal face pucherite hetero-junctions, its feature It is that the heating rate in the step 5 is 8~12 DEG C/min;G-C in the step 63N4The concentration of solution be 0.01~ 0.03g/mL。
7. the preparation method of carbonitride/Graphene according to claim 1/(040) crystal face pucherite hetero-junctions, its feature It is that the ultrasonic reaction time in the step 8 is 1~2h, ultrasonic power is 80~100W.
8. the preparation side of the carbonitride/Graphene in claim 1-7 described in any one/(040) crystal face pucherite hetero-junctions Carbonitride/Graphene obtained in method/(040) crystal face pucherite hetero-junctions, it is characterised in that the carbonitride/Graphene/ (040) BiVO in crystal face pucherite hetero-junctions4Structure be monoclinic phase, carbonitride/Graphene/(040) crystal face pucherite is heterogeneous BiVO in knot4, RGO and g-C3N4Three-phase coexistence, forms heterojunction structure, and BiVO4, RGO and g-C3N4Mutual of energy level Match somebody with somebody.
9. carbonitride/Graphene according to claim 8/(040) crystal face pucherite hetero-junctions, it is characterised in that:It is described Charge transfer resistance R after carbonitride/Graphene/(040) crystal face pucherite hetero-junctions illumination is than pure (040) crystal face BiVO4Powder The R values of body reduce 3.71 times, and degradation rate of carbonitride/Graphene/(040) the crystal face pucherite hetero-junctions under visible ray photograph is Pure (040) crystal face BiVO46.4 times of powder.
10. carbonitride/the Graphene described in claim 8 or 9/(040) crystal face pucherite hetero-junctions is organic in photocatalytic degradation Application in terms of pollutant.
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CN112973756A (en) * 2021-03-08 2021-06-18 合肥工业大学 Rod-shaped bismuth vanadate/RGO/graphite phase carbon nitride photocatalytic material and preparation method thereof
CN112973757A (en) * 2021-03-08 2021-06-18 合肥工业大学 Bismuth vanadate quantum dot/RGO/graphite phase carbon nitride ternary composite photocatalyst and preparation method thereof
CN115069292A (en) * 2022-08-08 2022-09-20 中交七鲤古镇(赣州)文化旅游有限公司 Preparation method and application of graphite carbon nitride/nitrogen-doped graphene/bismuth vanadate Z-type photocatalyst

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