CN106881140A - A kind of carbonitride/Graphene/(040) crystal face pucherite hetero-junctions and its preparation method and application - Google Patents
A kind of carbonitride/Graphene/(040) crystal face pucherite hetero-junctions and its preparation method and application Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims abstract description 172
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 58
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 229910002915 BiVO4 Inorganic materials 0.000 claims abstract description 106
- 239000000843 powder Substances 0.000 claims abstract description 94
- 238000001027 hydrothermal synthesis Methods 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 20
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 93
- 239000007788 liquid Substances 0.000 claims description 63
- 239000002243 precursor Substances 0.000 claims description 55
- 238000003756 stirring Methods 0.000 claims description 41
- 238000001556 precipitation Methods 0.000 claims description 35
- 239000008367 deionised water Substances 0.000 claims description 23
- 229910021641 deionized water Inorganic materials 0.000 claims description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- 238000013019 agitation Methods 0.000 claims description 18
- 238000005406 washing Methods 0.000 claims description 18
- 238000005516 engineering process Methods 0.000 claims description 16
- 239000000428 dust Substances 0.000 claims description 15
- 229910017604 nitric acid Inorganic materials 0.000 claims description 15
- 230000015556 catabolic process Effects 0.000 claims description 12
- 238000006731 degradation reaction Methods 0.000 claims description 12
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000005286 illumination Methods 0.000 claims description 7
- 238000012546 transfer Methods 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 229910003206 NH4VO3 Inorganic materials 0.000 claims description 4
- 239000002244 precipitate Substances 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 238000013033 photocatalytic degradation reaction Methods 0.000 claims description 2
- 238000002604 ultrasonography Methods 0.000 claims description 2
- -1 Carbon graphite alkene Chemical class 0.000 claims 1
- 239000006185 dispersion Substances 0.000 claims 1
- 239000003344 environmental pollutant Substances 0.000 claims 1
- 231100000719 pollutant Toxicity 0.000 claims 1
- 238000007146 photocatalysis Methods 0.000 abstract description 12
- 238000000926 separation method Methods 0.000 abstract description 9
- 150000001875 compounds Chemical class 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000003786 synthesis reaction Methods 0.000 abstract description 3
- 238000001354 calcination Methods 0.000 abstract description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 21
- 230000001699 photocatalysis Effects 0.000 description 10
- 235000019441 ethanol Nutrition 0.000 description 7
- 238000003760 magnetic stirring Methods 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 206010027476 Metastases Diseases 0.000 description 1
- 230000010718 Oxidation Activity Effects 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 238000000627 alternating current impedance spectroscopy Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 230000009401 metastasis Effects 0.000 description 1
- 229960000907 methylthioninium chloride Drugs 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- 229940043267 rhodamine b Drugs 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/24—Nitrogen compounds
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- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/39—Photocatalytic properties
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- C02F2101/00—Nature of the contaminant
- C02F2101/30—Organic compounds
- C02F2101/38—Organic compounds containing nitrogen
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- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
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Abstract
The invention discloses a kind of carbonitride/Graphene/(040) crystal face pucherite hetero-junctions and its preparation method and application, hydro-thermal method synthesis (040) crystal face BiVO is first passed through4Powder, and g C are obtained by calcination method3N4Powder, then by hydro-thermal method by (040) crystal face BiVO4Powder is compound with GO to obtain RGO/ (040) crystal face BiVO4Powder, finally by ultrasonic method by g C3N4Powder and RGO/ (040) crystal face BiVO4The compound of powder obtains g C3N4/ RGO/ (040) crystal face BiVO4Hetero-junctions.G C after compound3N4, RGO and (040) crystal face BiVO4Three-phase coexistence simultaneously keeps respective growth tendency, g C3N4, RGO and (040) crystal face BiVO4Between form hetero-junctions and mutual level-density parameter, be conducive to the separation in light induced electron and hole, make (040) crystal face BiVO4Photoresponse scope becomes big, and the separation rate of photo-generated carrier is improved, so as to improve (040) crystal face BiVO4Photocatalysis performance.
Description
Technical field
The invention belongs to field of functional materials, it is related to a kind of g-C3N4/ RGO/ (040) crystal face BiVO4Hetero-junctions and its preparation
Methods and applications.
Background technology
BiVO4It is a kind of photochemical catalyst with visible light activity, mainly there is monocline scheelite, cubic zircon ore deposit, four directions
Three kinds of crystal formations of scheelite, wherein monoclinic phase BiVO4Energy gap is about 2.4eV, and catalytic performance is best.The pucherite of monoclinic system
With excellent visible light response activity, its lattice parameter is:A=5.185, b=5.137, c=11.748, monoclinic system
BiVO4Conduction band it is main by V3d, O2pAnd Bi6pThree kinds of orbital hybridizations are formed, and this electronic structure makes photo-generated carrier easily migrate
To the surface of semiconductor so that photochemical catalyst is easier light-catalyzed reaction under visible light;The width of valence band is increased, from
And the mobile space of photohole is increased, the recombination rate of photo-generate electron-hole is reduced, so as to be more beneficial for photocatalytic process
Effectively carry out.Secondly the exposure of high activity crystal face also has a great impact to its performance, monoclinic phase BiVO4(040) crystal face
There is provided polyatom BiVO4Center, it may be possible to which the origin that oxygen activity point is produced in photocatalysis is particularly helpful to catalyst surface high activity
The generation of oxidation activity species OH, so as to improve degradation rate.However, (040) crystal face BiVO4There is also photo-generate electron-hole
To the low problem of separation rate, so as to cause the reduction of its photocatalytic activity.Therefore many scholars are modified to strengthen by it
Its visible light-responded ability, such as form photocatalysis hetero-junctions, doping precious metal and be modified, add rare earth element to be modified
And add the methods such as carbon.For example, Ji Tianhao et al. is received as presoma with titanate, using different mixed method legal systems
For the TiO for changing2/BiVO4Nano composite material, it is obvious red that ultraviolet spectra test result shows that the absorption of compound is generated
Move, show that under visible light, the photocatalytic activity of composite is far above using the experiment of methylene blue as simulation degraded substrate
Pure BiVO4And TiO2Crystal.Suo Jing et al. combines hydro-thermal method and infusion process, with nonionic surfactant P123 as template
Agent, is prepared for the modified BiVO of Cu under the conditions of 200 DEG C4- Cu composites, as a result find, compound morphosis is good, inhale
There is obvious red shift in take-up and absorption intensity is increased a lot.Chen Ying etc. combines hydro-thermal method-infusion process-roasting method in pure BiVO4
The area load Co elements of catalyst, experimental result shows that after reaction 1h, photocatalysis denitrification percent reaches 83.59%, and Co is most
Good load capacity is 4%, and reaction temperature is 400 DEG C, and roasting time is 1h.
RGO is a kind of two-dimentional carbon material of layer structure, and band gap is almost nil, and electric conductivity is high, and specific surface area is big, energy of adsorption
Power is strong, as good catalyst promoter, and can effectively facilitate the separative efficiency of photo-generated carrier, greatly strengthens photocatalysis
The activity and stability of material.g-C3N4The advantages of due to energy gap about 2.7eV, good chemical stability, preparation method is simple, is received
To extensive concern.
So far, g-C3N4/ RGO/ (040) crystal face BiVO4There is not been reported for the work of the preparation method of compound,
There is no patent and document report g-C3N4/ RGO/ (040) crystal face BiVO4The preparation method of compound.
The content of the invention
It is an object of the invention to provide a kind of carbonitride/Graphene/(040) crystal face pucherite hetero-junctions and its preparation side
Method and application, three-phase composite is carried out using ultrasonic method, and technological process is simple compared with other chemical synthesis, has successfully synthesized g-
C3N4/ RGO/ (040) crystal face BiVO4Hetero-junctions, improves BiVO4Photocatalysis performance.
In order to achieve the above object, the present invention is adopted the following technical scheme that:
A kind of preparation method of carbonitride/Graphene/(040) crystal face pucherite hetero-junctions, comprises the following steps:
Step 1, by Bi (NO3)3·5H2O is dissolved in dilute HNO3In, stir to clarify, it is subsequently adding NH4VO3, stirring 50~
80min, forms precursor liquid A;Wherein Bi (NO3)3·5H2O and NH4VO3Mol ratio be 1:1;
Step 2, by precursor liquid A at 70~90 DEG C 13~16h of hydro-thermal reaction, (040) crystal face BiVO is obtained4Precipitation, will
The washing of precipitate, drying, obtain (040) crystal face BiVO4Powder;
Step 3, graphene oxide is dissolved in the ethanol water that volume fraction is 40~60%, and ultrasonic disperse is simultaneously stirred
Uniformly, dust technology is subsequently adding, ultrasonic disperse simultaneously stirs, adds NaOH solution, ultrasonic disperse simultaneously stirs, obtains
GO solution;Wherein HNO in graphene oxide and the dust technology for adding3And in NaOH solution NaOH mol ratio for (0.35~
0.7):1:1;
Step 4, (040) crystal face BiVO that will be prepared4Powder is added in GO solution, and 30~60min of stirring forms forerunner
Liquid B, by precursor liquid B at 150~180 DEG C 80~120min of hydro-thermal reaction, obtain RGO/ (040) crystal face BiVO4Precipitation, by this
Washing of precipitate, drying, obtain RGO/ (040) crystal face BiVO4Powder;(040) crystal face BiVO for wherein adding4Powder and GO solution
The mass ratio of middle GO is (3~5):1;
Step 5, by CO (NH2)2530~580 DEG C are raised to from room temperature, 2~4h is calcined, g-C is obtained3N4Powder;
Step 6, under agitation, by obtained g-C3N4Powder is dissolved in deionized water, and stirring, ultrasound are equal to mixing
It is even, obtain g-C3N4Solution;
Step 7, under agitation, RGO/ (040) crystal face BiVO that will be prepared4Powder adds g-C3N4In solution, stir
30~60min is mixed, precursor liquid C is obtained, wherein RGO/ (040) crystal face BiVO for adding4Powder and g-C3N4G-C in solution3N4's
Mass ratio is (2~8):(8~2);
Step 8, ultrasonic reaction is carried out by precursor liquid C at room temperature, will be obtained after washing of precipitate, the drying of reacting generation
Carbonitride/Graphene/(040) crystal face pucherite hetero-junctions.
Bi in precursor liquid A in the step 13+Concentration be 0.1~0.3mol/L, dilute HNO3Concentration be 1~3mol/L.
Drying in the step 2, step 4 and step 8 is in 60~80 DEG C of 8~10h of freeze-day with constant temperature.
The concentration of graphene oxide is 0.01~0.02g/mL, dust technology and NaOH solution in GO solution in the step 3
Concentration be 2~4mol/L, the addition speed of dust technology and NaOH solution is 1~3 drop/sec.
Each ultrasonic disperse and stirred in the step 3, be first at 40~60 DEG C with the power of 80~100W
60~80min of ultrasonic disperse, is stirred for 10~30min.
Heating rate in the step 5 is 8~12 DEG C/min;
G-C in the step 63N4The concentration of solution is 0.01~0.03g/mL.
The ultrasonic reaction time in the step 8 is 1~2h, and ultrasonic power is 80~100W.
The obtained nitridation carbon graphite of the preparation method of described carbonitride/Graphene/(040) crystal face pucherite hetero-junctions
Alkene/(040) crystal face pucherite hetero-junctions, BiVO in the carbonitride/Graphene/(040) crystal face pucherite hetero-junctions4Structure
It is monoclinic phase, BiVO in carbonitride/Graphene/(040) crystal face pucherite hetero-junctions4, RGO and g-C3N4Three-phase coexistence, forms
Heterojunction structure, and BiVO4, RGO and g-C3N4Energy level be mutually matched.
Charge transfer resistance R after the carbonitride/Graphene/(040) crystal face pucherite hetero-junctions illumination is than pure (040)
Crystal face BiVO4The R values of powder reduce 3.71 times, and carbonitride/Graphene/(040) crystal face pucherite hetero-junctions shines in visible ray
Under degradation rate be pure (040) crystal face BiVO46.4 times of powder.
Described carbonitride/Graphene/(040) crystal face pucherite hetero-junctions is in terms of photocatalysis degradation organic contaminant
Using.
Compared with prior art, the invention has the advantages that:
The preparation method of carbonitride/Graphene/(040) crystal face pucherite hetero-junctions that the present invention is provided, first passes through hydro-thermal
Method synthesis (040) crystal face BiVO4Powder, and g-C is obtained by calcination method3N4Powder, then by hydro-thermal method by (040) crystal face
BiVO4Powder is combined with graphene oxide (GO), and GO is reduced into Graphene (RGO) in recombination process, obtains RGO/ (040) crystal face
BiVO4Powder, g-C is carried out finally by ultrasonic method3N4Powder and RGO/ (040) crystal face BiVO4Being combined for powder, has synthesized g-
C3N4/ RGO/ (040) crystal face BiVO4Hetero-junctions.The method ultrasonic reaction time is short, and technological process is simple.Ultrasonic method and other sides
Method is cheap compared to having preparation process is simple, can directly obtain the powder of well-crystallized, it is easy to which adjusting seed size size etc. is excellent
Point.Due to BiVO4And g-C3N4Band structure and crystal plane structure match very much, light induced electron can be from g-C3N4Conduction band transfer
To BiVO4Conduction band, and photohole can be from BiVO4Valency be transferred to g-C3N4Valence band, thus be conducive to light induced electron and
Efficiently separating and migrating for hole, improves the concentration of carrier;RGO excellent electric conductivity increased the concentration of carrier, effectively
Improve BiVO4The separative efficiency of photo-generated carrier, so that its photocatalysis performance strengthens;g-C3N4, RGO and (040) crystal face
BiVO4Hetero-junctions is formed between powder three, the formation of hetero-junctions improves the separation rate of photo-generate electron-hole pair, Neng Gouti
(040) crystal face BiVO high4Photocatalysis performance.
In carbonitride/Graphene/(040) crystal face pucherite hetero-junctions prepared by the present invention, RGO and g-C3N4Introducing simultaneously
Without change BiVO4Thing phase, be still monoclinic phase, crystal development is complete, and the exposure of (040) crystal face is good, and structural stability is good.
RGO good electric conductivity increased the avtive spot of catalyst surface, effectively facilitate the migration of light induced electron, suppress electronics-sky
Cave pair is again combined.G-C after compound3N4, RGO and (040) crystal face BiVO4Three-phase coexistence, and three-phase syntrophism, and keep each
From growth tendency, between three have synergy.g-C3N4, RGO and (040) crystal face BiVO4Between form hetero-junctions and
Mutual level-density parameter, the formation of heterojunction structure effectively promotes the multiple again of the inhibition of metastasis electron-hole pair of light induced electron
Close, be conducive to the separation in light induced electron and hole, be conducive to the conduction of electronics, effectively facilitate the separative efficiency of photo-generated carrier,
So as to improve photocatalytic activity and stability, improve photoresponse intensity, photoresponse scope becomes big, photo-generate electron-hole pair
Separation rate increase, the separation rate of photo-generated carrier is improved, so as to improve (040) crystal face BiVO4Photocatalysis performance.
Further, the obtained g-C of the present invention3N4/ RGO/ (040) crystal face BiVO4Electric charge transfer electricity after hetero-junctions illumination
Resistance R is 1.71 × 106Ω, and pure (040) crystal face BiVO4The R of powder is 6.35 × 106Ω, g-C after being combined3N4/RGO/(040)
Crystal face BiVO4Purer (040) the crystal face BiVO of charge transfer resistance R values of hetero-junctions4Powder reduces about 3.71 times, illustrates multiple
G-C after conjunction3N4, RGO and (040) crystal face BiVO4Between formed heterojunction structure be effectively promoted BiVO4Photoproduction in electrode
The transmission and separation of carrier, improve the concentration of carrier.And g-C3N4/ RGO/ (040) crystal face BiVO4Hetero-junctions is can
Degradation rate is up to more than 96%, and pure (040) crystal face BiVO after seeing illumination 60min4Powder is in visible ray according to the degraded after 60min
Rate is only 15%, g-C after being combined3N4/ (040) crystal face BiVO4Purer (040) the crystal face BiVO of degradation rate of hetero-junctions4Powder is improved
About 6.4 times, greatly improve (040) crystal face BiVO4Photocatalysis performance.
Brief description of the drawings
Fig. 1 is g-C prepared by the present invention3N4/ RGO/ (040) crystal face BiVO4The XRD diffracting spectrums of hetero-junctions;
Fig. 2 is g-C prepared by the present invention3N4/ RGO/ (040) crystal face BiVO4The FI-IR collection of illustrative plates of hetero-junctions;
Fig. 3 is g-C prepared by the present invention3N4/ RGO/ (040) crystal face BiVO4The ac impedance spectroscopy of hetero-junctions;
Fig. 4 is g-C prepared by the present invention3N4/ RGO/ (040) crystal face BiVO4The photocatalytic degradation collection of illustrative plates of hetero-junctions.
Specific embodiment
The present invention is described further with currently preferred specific embodiment below in conjunction with the accompanying drawings, raw material is analysis
It is pure.
Embodiment 1:
Step 1, by 6mmoL Bi (NO3)3·5H2O is dissolved in 1mol/L's with uniform slow speed under agitation
HNO3In solution, stirring 30min is slowly added to 6mmoL NH after solution is clarified4VO3, 60min is stirred, precursor liquid A is formed, it is preceding
Drive Bi in liquid A3+Concentration be 0.2mol/L;
Step 2, precursor liquid A is obtained (040) crystal face BiVO after hydro-thermal reaction 15h at 80 DEG C4Precipitation, the precipitation is through alcohol
After washing, washing, in 70 DEG C of freeze-day with constant temperature 9h, (040) crystal face BiVO is obtained4Powder;
Step 3, it is 50% that the graphene oxide (GO) that the Hummers methods of improvement will be used to prepare is dissolved in volume fraction
In ethanol water, 60min is disperseed with the power ultrasonic of 100W at 50 DEG C, stir 10min, then added with 1 drop/sec of speed
The HNO of 2mol/L3, with the power ultrasonic 60min of 100W at 50 DEG C, 10min is stirred, then 2mol/L is added with 1 drop/sec of speed
NaOH solution, with the power ultrasonic 60min of 100W at 50 DEG C, stir 10min, obtain GO solution;Wherein graphene oxide with plus
HNO in the dust technology for entering3And the mol ratio of NaOH is 0.5 in NaOH solution:1:The concentration of graphene oxide in 1, GO solution
It is 0.02g/mL;
Step 4, (040) crystal face BiVO that will be prepared4Powder is added in GO solution, and stirring 60min forms precursor liquid B,
By precursor liquid B at 160 DEG C hydro-thermal reaction 100min, obtain RGO/ (040) crystal face BiVO4Precipitation, will react generation precipitation according to
It is secondary to be washed with absolute ethyl alcohol and deionized water, then 10h is dried at 70 DEG C, obtain RGO/ (040) crystal face BiVO4Powder;Wherein
(040) crystal face BiVO for adding4Powder is 4 with the mass ratio of GO in GO solution:1;
Step 5, by CO (NH2)2550 DEG C are raised to the heating rate of 10 DEG C/min, calcine 3h, be obtained faint yellow and in many
Poroid g-C3N4Powder;
Step 6, under agitation by obtained g-C3N4Powder is dissolved in deionized water, stirring, ultrasonic disperse to g-
C3N4Solution colour is thin out, it is uniform untill, obtain the g-C that concentration is 0.02g/mL3N4Solution;
Step 7, under magnetic stirring, RGO/ (040) crystal face BiVO that will be prepared4Powder is with 2:8 mass ratio is slow
Add g-C3N4In solution, 60min is stirred, obtain precursor liquid C;
Step 8, by precursor liquid C ultrasonic disperse 1h at room temperature, ultrasonic power is 100W, then will react the precipitation of generation
Washed with absolute ethyl alcohol and deionized water successively, 9h is dried at 70 DEG C, obtain g-C3N4/ RGO/ (040) crystal face BiVO4It is heterogeneous
Knot.
Embodiment 2:
Step 1, by 6mmoL Bi (NO3)3·5H2O is dissolved in 1.8mol/L's with uniform slow speed under agitation
HNO3In solution, stirring 30min is slowly added to 6mmoL NH after solution is clarified4VO3, 55min is stirred, precursor liquid A is formed, it is preceding
Drive Bi in liquid A3+Concentration be 0.18mol/L;
Step 2, precursor liquid A is obtained (040) crystal face BiVO after hydro-thermal reaction 13.5h at 78 DEG C4Precipitation, the precipitation is through alcohol
After washing, washing, in 72 DEG C of freeze-day with constant temperature 9h, (040) crystal face BiVO is obtained4Powder;
Step 3, the graphene oxide that will be prepared (GO) is dissolved in the ethanol water that volume fraction is 40%, at 40 DEG C
72min is disperseed with the power ultrasonic of 80W, 15min is stirred, the HNO of 3mol/L is then added with 2 drops/sec of speed3, at 40 DEG C
With the power ultrasonic 72min of 80W, stir 15min, then the NaOH solution of 3mol/L added with 2 drops/sec of speed, at 40 DEG C with
The power ultrasonic 72min of 80W, stirs 15min, obtains GO solution;Wherein HNO in graphene oxide and the dust technology for adding3And
The mol ratio of NaOH is 0.35 in NaOH solution:1:The concentration of graphene oxide is 0.01g/mL in 1, GO solution;
Step 4, (040) crystal face BiVO that will be prepared4Powder is added in GO solution, and stirring 50min forms precursor liquid B,
By precursor liquid B at 170 DEG C hydro-thermal reaction 90min, obtain RGO/ (040) crystal face BiVO4Precipitation, by the precipitation for reacting generation successively
Washed with absolute ethyl alcohol and deionized water, then 9h is dried at 72 DEG C, obtain RGO/ (040) crystal face BiVO4Powder;Wherein add
(040) crystal face BiVO4Powder is 3 with the mass ratio of GO in GO solution:1;
Step 5, by CO (NH2)2530 DEG C are raised to the heating rate of 10.5 DEG C/min, 4h is calcined, are obtained faint yellow and are in
Cavernous g-C3N4Powder;
Step 6, under agitation by obtained g-C3N4Powder is dissolved in deionized water, stirring, ultrasonic disperse to g-
C3N4Solution colour is thin out, it is uniform untill, obtain the g-C that concentration is 0.01g/mL3N4Solution;
Step 7, under magnetic stirring, RGO/ (040) crystal face BiVO that will be prepared4Powder is with 4:6 mass ratio is slow
Add g-C3N4In solution, 40min is stirred, obtain precursor liquid C;
Step 8, by precursor liquid C ultrasonic disperse 1.2h at room temperature, ultrasonic power is 90W, then will react the heavy of generation
Shallow lake is washed with absolute ethyl alcohol and deionized water successively, and 9h is dried at 72 DEG C, obtains g-C3N4/ RGO/ (040) crystal face BiVO4It is different
Matter knot.
Embodiment 3:
Step 1, by 6mmoL Bi (NO3)3·5H2O is dissolved in 1.2mol/L's with uniform slow speed under agitation
HNO3In solution, stirring 30min is slowly added to 6mmoL NH after solution is clarified4VO3, 75min is stirred, precursor liquid A is formed, it is preceding
Drive Bi in liquid A3+Concentration be 0.22mol/L;
Step 2, precursor liquid A is obtained (040) crystal face BiVO after hydro-thermal reaction 14.5h at 82 DEG C4Precipitation, the precipitation is through alcohol
After washing, washing, in 68 DEG C of freeze-day with constant temperature 9h, (040) crystal face BiVO is obtained4Powder;
Step 3, the graphene oxide that will be prepared (GO) is dissolved in the ethanol water that volume fraction is 45%, at 45 DEG C
75min is disperseed with the power ultrasonic of 90W, 20min is stirred, the HNO of 4mol/L is then added with 3 drops/sec of speed3, at 45 DEG C
With the power ultrasonic 75min of 90W, stir 20min, then the NaOH solution of 4mol/L added with 3 drops/sec of speed, at 45 DEG C with
The power ultrasonic 75min of 90W, stirs 20min, obtains GO solution;Wherein HNO in graphene oxide and the dust technology for adding3And
The mol ratio of NaOH is 0.7 in NaOH solution:1:The concentration of graphene oxide is 0.014g/mL in 1, GO solution;
Step 4, (040) crystal face BiVO that will be prepared4Powder is added in GO solution, and stirring 40min forms precursor liquid B,
By precursor liquid B at 180 DEG C hydro-thermal reaction 80min, obtain RGO/ (040) crystal face BiVO4Precipitation, by the precipitation for reacting generation successively
Washed with absolute ethyl alcohol and deionized water, then 9h is dried at 68 DEG C, obtain RGO/ (040) crystal face BiVO4Powder;Wherein add
(040) crystal face BiVO4Powder is 5 with the mass ratio of GO in GO solution:1;
Step 5, by CO (NH2)2540 DEG C are raised to the heating rate of 9.5 DEG C/min, 3.5h is calcined, are obtained faint yellow and are in
Cavernous g-C3N4Powder;
Step 6, under agitation by obtained g-C3N4Powder is dissolved in deionized water, stirring, ultrasonic disperse to g-
C3N4Solution colour is thin out, it is uniform untill, obtain the g-C that concentration is 0.03g/mL3N4Solution;
Step 7, under magnetic stirring, RGO/ (040) crystal face BiVO that will be prepared4Powder is with 8:2 mass ratio is slow
Add g-C3N4In solution, 50min is stirred, obtain precursor liquid C;
Step 8, by precursor liquid C ultrasonic disperse 1.4h at room temperature, ultrasonic power is 95W, then will react the heavy of generation
Shallow lake is washed with absolute ethyl alcohol and deionized water successively, and 9h is dried at 68 DEG C, obtains g-C3N4/ RGO/ (040) crystal face BiVO4It is different
Matter knot.
Embodiment 4:
Step 1, by 6mmoL Bi (NO3)3·5H2O is dissolved in 1.5mol/L's with uniform slow speed under agitation
HNO3In solution, stirring 30min is slowly added to 6mmoL NH after solution is clarified4VO3, 50min is stirred, precursor liquid A is formed, it is preceding
Drive Bi in liquid A3+Concentration be 0.25mol/L;
Step 2, precursor liquid A is obtained (040) crystal face BiVO after hydro-thermal reaction 14h at 85 DEG C4Precipitation, the precipitation is through alcohol
After washing, washing, in 75 DEG C of freeze-day with constant temperature 8.5h, (040) crystal face BiVO is obtained4Powder;
Step 3, the graphene oxide that will be prepared (GO) is dissolved in the ethanol water that volume fraction is 55%, at 55 DEG C
68min is disperseed with the power ultrasonic of 85W, 25min is stirred, the HNO of 2.5mol/L is then added with 1.5 drops/sec of speed3, 55
With the power ultrasonic 68min of 85W at DEG C, 25min is stirred, then the NaOH solution of 2.5mol/L is added with 1.5 drops/sec of speed,
With the power ultrasonic 68min of 85W at 55 DEG C, 25min is stirred, obtain GO solution;Wherein in graphene oxide and the dust technology for adding
HNO3And the mol ratio of NaOH is 0.55 in NaOH solution:1:The concentration of graphene oxide is 0.015g/mL in 1, GO solution;
Step 4, (040) crystal face BiVO that will be prepared4Powder is added in GO solution, and stirring 55min forms precursor liquid B,
By precursor liquid B at 150 DEG C hydro-thermal reaction 120min, obtain RGO/ (040) crystal face BiVO4Precipitation, will react generation precipitation according to
It is secondary to be washed with absolute ethyl alcohol and deionized water, then 8.5h is dried at 75 DEG C, obtain RGO/ (040) crystal face BiVO4Powder;Wherein
(040) crystal face BiVO for adding4Powder is 3.8 with the mass ratio of GO in GO solution:1;
Step 5, by CO (NH2)2560 DEG C are raised to the heating rate of 8 DEG C/min, calcine 2.8h, be obtained faint yellow and in many
Poroid g-C3N4Powder;
Step 6, under agitation by obtained g-C3N4Powder is dissolved in deionized water, stirring, ultrasonic disperse to g-
C3N4Solution colour is thin out, it is uniform untill, obtain the g-C that concentration is 0.018g/mL3N4Solution;
Step 7, under magnetic stirring, RGO/ (040) crystal face BiVO that will be prepared4Powder is with 3:7 mass ratio is slow
Add g-C3N4In solution, 30min is stirred, obtain precursor liquid C;
Step 8, by precursor liquid C ultrasonic disperse 1.6h at room temperature, ultrasonic power is 85W, then will react the heavy of generation
Shallow lake is washed with absolute ethyl alcohol and deionized water successively, and 8.5h is dried at 75 DEG C, obtains g-C3N4/ RGO/ (040) crystal face BiVO4
Hetero-junctions.
Embodiment 5:
Step 1, by 6mmoL Bi (NO3)3·5H2O is dissolved in 2.5mol/L's with uniform slow speed under agitation
HNO3In solution, stirring 30min is slowly added to 6mmoL NH after solution is clarified4VO3, 70min is stirred, precursor liquid A is formed, it is preceding
Drive Bi in liquid A3+Concentration be 0.15mol/L;
Step 2, precursor liquid A is obtained (040) crystal face BiVO after hydro-thermal reaction 15.5h at 75 DEG C4Precipitation, the precipitation is through alcohol
After washing, washing, in 65 DEG C of freeze-day with constant temperature 9.5h, (040) crystal face BiVO is obtained4Powder;
Step 3, the graphene oxide that will be prepared (GO) is dissolved in the ethanol water that volume fraction is 60%, at 60 DEG C
70min is disperseed with the power ultrasonic of 95W, 30min is stirred, the HNO of 3.5mol/L is then added with 2.5 drops/sec of speed3, 60
With the power ultrasonic 70min of 95W at DEG C, 30min is stirred, then the NaOH solution of 3.5mol/L is added with 2.5 drops/sec of speed,
With the power ultrasonic 70min of 95W at 60 DEG C, 30min is stirred, obtain GO solution;Wherein in graphene oxide and the dust technology for adding
HNO3And the mol ratio of NaOH is 0.4 in NaOH solution:1:The concentration of graphene oxide is 0.016g/mL in 1, GO solution;
Step 4, (040) crystal face BiVO that will be prepared4Powder is added in GO solution, and stirring 45min forms precursor liquid B,
By precursor liquid B at 155 DEG C hydro-thermal reaction 110min, obtain RGO/ (040) crystal face BiVO4Precipitation, will react generation precipitation according to
It is secondary to be washed with absolute ethyl alcohol and deionized water, then 9.5h is dried at 65 DEG C, obtain RGO/ (040) crystal face BiVO4Powder;Wherein
(040) crystal face BiVO for adding4Powder is 3.5 with the mass ratio of GO in GO solution:1;
Step 5, by CO (NH2)2570 DEG C are raised to the heating rate of 9 DEG C/min, calcine 2.5h, be obtained faint yellow and in many
Poroid g-C3N4Powder;
Step 6, under agitation by obtained g-C3N4Powder is dissolved in deionized water, stirring, ultrasonic disperse to g-
C3N4Solution colour is thin out, it is uniform untill, obtain the g-C that concentration is 0.015g/mL3N4Solution;
Step 7, under magnetic stirring, RGO/ (040) crystal face BiVO that will be prepared4Powder is with 7:3 mass ratio is slow
Add g-C3N4In solution, 35min is stirred, obtain precursor liquid C;
Step 8, by precursor liquid C ultrasonic disperse 1.8h at room temperature, ultrasonic power is 80W, then will react the heavy of generation
Shallow lake is washed with absolute ethyl alcohol and deionized water successively, and 10h is dried at 60 DEG C, obtains g-C3N4/ RGO/ (040) crystal face BiVO4It is different
Matter knot.
Embodiment 6
Step 1, by 6mmoL Bi (NO3)3·5H2O is dissolved in 2mol/L's with uniform slow speed under agitation
HNO3In solution, stirring 30min is slowly added to 6mmoL NH after solution is clarified4VO3, 80min is stirred, precursor liquid A is formed, it is preceding
Drive Bi in liquid A3+Concentration be 0.1mol/L;
Step 2, precursor liquid A is obtained (040) crystal face BiVO after hydro-thermal reaction 16h at 70 DEG C4Precipitation, the precipitation is through alcohol
After washing, washing, in 60 DEG C of freeze-day with constant temperature 10h, (040) crystal face BiVO is obtained4Powder;
Step 3, the graphene oxide that will be prepared (GO) is dissolved in the ethanol water that volume fraction is 52%, at 52 DEG C
65min is disperseed with the power ultrasonic of 100W, 12min is stirred, the HNO of 2.2mol/L is then added with 1.2 drops/sec of speed3, 52
With the power ultrasonic 65min of 100W at DEG C, 12min is stirred, then the NaOH solution of 2.2mol/L is added with 1.2 drops/sec of speed,
With the power ultrasonic 65min of 100W at 52 DEG C, 12min is stirred, obtain GO solution;Wherein in graphene oxide and the dust technology for adding
HNO3And the mol ratio of NaOH is 0.6 in NaOH solution:1:The concentration of graphene oxide is 0.012g/mL in 1, GO solution;
Step 4, (040) crystal face BiVO that will be prepared4Powder is added in GO solution, and stirring 35min forms precursor liquid B,
By precursor liquid B at 165 DEG C hydro-thermal reaction 95min, obtain RGO/ (040) crystal face BiVO4Precipitation, by the precipitation for reacting generation successively
Washed with absolute ethyl alcohol and deionized water, then 10h is dried at 60 DEG C, obtain RGO/ (040) crystal face BiVO4Powder;Wherein plus
(040) crystal face BiVO for entering4Powder is 4.5 with the mass ratio of GO in GO solution:1;
Step 5, by CO (NH2)2580 DEG C are raised to the heating rate of 11 DEG C/min, calcine 2h, be obtained faint yellow and in many
Poroid g-C3N4Powder;
Step 6, under agitation by obtained g-C3N4Powder is dissolved in deionized water, stirring, ultrasonic disperse to g-
C3N4Solution colour is thin out, it is uniform untill, obtain the g-C that concentration is 0.025g/mL3N4Solution;
Step 7, under magnetic stirring, RGO/ (040) crystal face BiVO that will be prepared4Powder is with 5:5 mass ratio is slow
Add g-C3N4In solution, 45min is stirred, obtain precursor liquid C;
Step 8, by precursor liquid C ultrasonic disperse 1.5h at room temperature, ultrasonic power is 100W, then will react the heavy of generation
Shallow lake is washed with absolute ethyl alcohol and deionized water successively, and 9.5h is dried at 65 DEG C, obtains g-C3N4/ RGO/ (040) crystal face BiVO4
Hetero-junctions.
Embodiment 7
Step 1, by 6mmoL Bi (NO3)3·5H2O is dissolved in 3mol/L's with uniform slow speed under agitation
HNO3In solution, stirring 30min is slowly added to 6mmoL NH after solution is clarified4VO3, 65min is stirred, precursor liquid A is formed, it is preceding
Drive Bi in liquid A3+Concentration be 0.3mol/L;
Step 2, precursor liquid A is obtained (040) crystal face BiVO after hydro-thermal reaction 13h at 90 DEG C4Precipitation, the precipitation is through alcohol
After washing, washing, in 80 DEG C of freeze-day with constant temperature 8h, (040) crystal face BiVO is obtained4Powder;
Step 3, the graphene oxide that will be prepared (GO) is dissolved in the ethanol water that volume fraction is 48%, at 48 DEG C
80min is disperseed with the power ultrasonic of 90W, 18min is stirred, the HNO of 2.8mol/L is then added with 1.8 drops/sec of speed3, 48
With the power ultrasonic 80min of 90W at DEG C, 18min is stirred, then the NaOH solution of 2.8mol/L is added with 1.8 drops/sec of speed,
With the power ultrasonic 80min of 90W at 48 DEG C, 18min is stirred, obtain GO solution;Wherein in graphene oxide and the dust technology for adding
HNO3And the mol ratio of NaOH is 0.45 in NaOH solution:1:The concentration of graphene oxide is 0.018g/mL in 1, GO solution;
Step 4, (040) crystal face BiVO that will be prepared4Powder is added in GO solution, and stirring 30min forms precursor liquid B,
By precursor liquid B at 175 DEG C hydro-thermal reaction 85min, obtain RGO/ (040) crystal face BiVO4Precipitation, by the precipitation for reacting generation successively
Washed with absolute ethyl alcohol and deionized water, then 8h is dried at 80 DEG C, obtain RGO/ (040) crystal face BiVO4Powder;Wherein add
(040) crystal face BiVO4Powder is 4.2 with the mass ratio of GO in GO solution:1;
Step 5, by CO (NH2)2555 DEG C are raised to the heating rate of 12 DEG C/min, 3.2h is calcined, are obtained faint yellow and are in
Cavernous g-C3N4Powder;
Step 6, under agitation by obtained g-C3N4Powder is dissolved in deionized water, stirring, ultrasonic disperse to g-
C3N4Solution colour is thin out, it is uniform untill, obtain the g-C that concentration is 0.022g/mL3N4Solution;
Step 7, under magnetic stirring, RGO/ (040) crystal face BiVO that will be prepared4Powder is with 6:4 mass ratio is slow
Add g-C3N4In solution, 55min is stirred, obtain precursor liquid C;
Step 8, by precursor liquid C ultrasonic disperse 2h at room temperature, ultrasonic power is 90W, then will react the precipitation of generation
Washed with absolute ethyl alcohol and deionized water successively, 8h is dried at 80 DEG C, obtain g-C3N4/ RGO/ (040) crystal face BiVO4It is heterogeneous
Knot.
Fig. 1 is g-C prepared by the present invention3N4/ RGO/ (040) crystal face BiVO4The XRD of hetero-junctions, it can be seen that RGO
And g-C3N4Introducing do not have change BiVO4Thing phase, BiVO4Still it is monoclinic phase.
Fig. 2 is g-C prepared by the present invention3N4/ RGO/ (040) crystal face BiVO4The FT-IR figures of hetero-junctions, it can be seen that
GO it is original 1050,1220,1620,1730cm-1The absworption peak at place disappears, and still retains 1540cm-1And 3450cm-1Place absorbs
Peak, this explanation GO has been reduced to RGO, so as to understand to be successfully prepared out g-C3N4/ RGO/ (040) crystal face BiVO4Hetero-junctions.
Fig. 3 is g-C prepared by the present invention3N4/ RGO/ (040) crystal face BiVO4The AC impedance figure of hetero-junctions, in EIS
The radius size of Nyquist curves reflects the size of electrode surface reaction rate and the size of electrode resistance.Radius is bigger
Illustrate that electrode surface reaction rate is smaller, charge transfer resistance is bigger.It can be seen that g-C3N4/ RGO/ (040) crystal face BiVO4
Hetero-junctions and (040) crystal face BiVO4Each Nyquist null circle arc radius illumination of powder is front and rear to there is significant change, illumination
Radius of curvature afterwards is significantly less than the sample of subdued light conditions.Wherein charge transfer resistance (R) is main research object, from table 1
Understand RGO/ (040) crystal face BiVO after illumination4R be 3.43 × 106Ω, (040) crystal face BiVO4The R of powder is 6.35 × 106
Ω, R value reduce about 2 times, g-C3N4/ RGO/ (040) crystal face BiVO4The R of hetero-junctions is 1.71 × 106Ω, than (040) crystal face
BiVO4The R values of powder reduce about 3.71 times, show g-C3N4, RGO and (040) crystal face BiVO4Between formed hetero-junctions knot
Structure has been effectively promoted BiVO4The transmission and separation of photo-generated carrier, improve the concentration of carrier in electrode.
G-C prepared by the present invention of table 13N4/ RGO/ (040) crystal face BiVO4The ZsimpWin fitting data of hetero-junctions
Fig. 4 is g-C prepared by the present invention3N4/ RGO/ (040) crystal face BiVO4The degraded collection of illustrative plates of hetero-junctions rhodamine B degradation,
It can be seen that g-C3N4/ RGO/ (040) crystal face BiVO4Hetero-junctions visible ray shine 60min after degradation rate up to more than 96%,
RGO/ (040) crystal face BiVO4The degradation rate of powder is only 15%, pure (040) crystal face BiVO4The degradation rate of powder is only 15%, g-
C3N4/ RGO/ (040) crystal face BiVO4The degradation rate of hetero-junctions is than RGO/ (040) crystal face BiVO4Powder and pure (040) crystal face BiVO4
The degradation rate of powder improves 6.4 times, greatly improves (040) crystal face BiVO4Photocatalysis performance.
Above said content is to combine specific preferred embodiment further description made for the present invention, is not
All or unique implementation method, those of ordinary skill in the art by read description of the invention and to technical solution of the present invention
Any equivalent conversion taken, is claim of the invention and is covered.
Claims (10)
1. the preparation method of a kind of carbonitride/Graphene/(040) crystal face pucherite hetero-junctions, it is characterised in that including following step
Suddenly:
Step 1, by Bi (NO3)3·5H2O is dissolved in dilute HNO3In, stir to clarify, it is subsequently adding NH4VO3, 50~80min is stirred,
Form precursor liquid A;Wherein Bi (NO3)3·5H2O and NH4VO3Mol ratio be 1:1;
Step 2, by precursor liquid A at 70~90 DEG C 13~16h of hydro-thermal reaction, (040) crystal face BiVO is obtained4Precipitation, this is precipitated
Wash, dry, obtain (040) crystal face BiVO4Powder;
Step 3, graphene oxide is dissolved in the ethanol water that volume fraction is 40~60%, and ultrasonic disperse simultaneously stirs equal
It is even, dust technology is subsequently adding, ultrasonic disperse simultaneously stirs, and adds NaOH solution, and ultrasonic disperse simultaneously stirs, and obtains GO
Solution;Wherein HNO in graphene oxide and the dust technology for adding3And in NaOH solution NaOH mol ratio for (0.35~
0.7):1:1;
Step 4, (040) crystal face BiVO that will be prepared4Powder is added in GO solution, and 30~60min of stirring forms precursor liquid B, will
Precursor liquid B 80~120min of hydro-thermal reaction at 150~180 DEG C, obtain RGO/ (040) crystal face BiVO4Precipitation, the precipitation is washed
Wash, dry, obtain RGO/ (040) crystal face BiVO4Powder;(040) crystal face BiVO for wherein adding4Powder and GO in GO solution
Mass ratio is (3~5):1;
Step 5, by CO (NH2)2530~580 DEG C are raised to from room temperature, 2~4h is calcined, g-C is obtained3N4Powder;
Step 6, under agitation, by obtained g-C3N4Powder is dissolved in deionized water, and stirring, ultrasound are obtained to well mixed
To g-C3N4Solution;
Step 7, under agitation, RGO/ (040) crystal face BiVO that will be prepared4Powder adds g-C3N4In solution, stirring 30
~60min, obtains precursor liquid C, wherein RGO/ (040) crystal face BiVO for adding4Powder and g-C3N4G-C in solution3N4Quality
Than being (2~8):(8~2);
Step 8, ultrasonic reaction is carried out by precursor liquid C at room temperature, will be nitrogenized after washing of precipitate, the drying of reacting generation
Carbon graphite alkene/(040) crystal face pucherite hetero-junctions.
2. the preparation method of carbonitride/Graphene according to claim 1/(040) crystal face pucherite hetero-junctions, its feature
It is, Bi in precursor liquid A in the step 13+Concentration be 0.1~0.3mol/L, dilute HNO3Concentration be 1~3mol/L.
3. the preparation method of carbonitride/Graphene according to claim 1/(040) crystal face pucherite hetero-junctions, its feature
It is that the drying in the step 2, step 4 and step 8 is in 60~80 DEG C of 8~10h of freeze-day with constant temperature.
4. the preparation method of carbonitride/Graphene according to claim 1/(040) crystal face pucherite hetero-junctions, its feature
Be that the concentration of graphene oxide is 0.01~0.02g/mL in GO solution in the step 3, dust technology and NaOH solution it is dense
It is 2~4mol/L to spend, and the addition speed of dust technology and NaOH solution is 1~3 drop/sec.
5. the preparation method of carbonitride/Graphene according to claim 1/(040) crystal face pucherite hetero-junctions, its feature
It is each ultrasonic disperse and to be stirred in the step 3, is first at 40~60 DEG C with the power ultrasonic of 80~100W
60~80min of dispersion, is stirred for 10~30min.
6. the preparation method of carbonitride/Graphene according to claim 1/(040) crystal face pucherite hetero-junctions, its feature
It is that the heating rate in the step 5 is 8~12 DEG C/min;G-C in the step 63N4The concentration of solution be 0.01~
0.03g/mL。
7. the preparation method of carbonitride/Graphene according to claim 1/(040) crystal face pucherite hetero-junctions, its feature
It is that the ultrasonic reaction time in the step 8 is 1~2h, ultrasonic power is 80~100W.
8. the preparation side of the carbonitride/Graphene in claim 1-7 described in any one/(040) crystal face pucherite hetero-junctions
Carbonitride/Graphene obtained in method/(040) crystal face pucherite hetero-junctions, it is characterised in that the carbonitride/Graphene/
(040) BiVO in crystal face pucherite hetero-junctions4Structure be monoclinic phase, carbonitride/Graphene/(040) crystal face pucherite is heterogeneous
BiVO in knot4, RGO and g-C3N4Three-phase coexistence, forms heterojunction structure, and BiVO4, RGO and g-C3N4Mutual of energy level
Match somebody with somebody.
9. carbonitride/Graphene according to claim 8/(040) crystal face pucherite hetero-junctions, it is characterised in that:It is described
Charge transfer resistance R after carbonitride/Graphene/(040) crystal face pucherite hetero-junctions illumination is than pure (040) crystal face BiVO4Powder
The R values of body reduce 3.71 times, and degradation rate of carbonitride/Graphene/(040) the crystal face pucherite hetero-junctions under visible ray photograph is
Pure (040) crystal face BiVO46.4 times of powder.
10. carbonitride/the Graphene described in claim 8 or 9/(040) crystal face pucherite hetero-junctions is organic in photocatalytic degradation
Application in terms of pollutant.
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CN108855077A (en) * | 2018-05-30 | 2018-11-23 | 陕西科技大学 | Ag-BiVO4Crystal face/MnOxCrystal face BiVO4Photochemical catalyst and preparation method thereof |
CN108855078A (en) * | 2018-05-30 | 2018-11-23 | 陕西科技大学 | A kind of Ag- (010) crystal face BiVO4@RGO photochemical catalyst and preparation method thereof |
CN108855078B (en) * | 2018-05-30 | 2021-06-04 | 陕西科技大学 | Ag- (010) crystal face BiVO4@ RGO photocatalyst and preparation method thereof |
CN110327965A (en) * | 2019-08-14 | 2019-10-15 | 齐鲁工业大学 | A kind of two dimension pucherite/graphene/carbonitride composite material and preparation method and application |
CN111167496A (en) * | 2020-01-09 | 2020-05-19 | 南开大学 | Visible light catalytic material and preparation method and application thereof |
CN111167496B (en) * | 2020-01-09 | 2020-12-25 | 南开大学 | Visible light catalytic material and preparation method and application thereof |
CN112973756A (en) * | 2021-03-08 | 2021-06-18 | 合肥工业大学 | Rod-shaped bismuth vanadate/RGO/graphite phase carbon nitride photocatalytic material and preparation method thereof |
CN112973757A (en) * | 2021-03-08 | 2021-06-18 | 合肥工业大学 | Bismuth vanadate quantum dot/RGO/graphite phase carbon nitride ternary composite photocatalyst and preparation method thereof |
CN115069292A (en) * | 2022-08-08 | 2022-09-20 | 中交七鲤古镇(赣州)文化旅游有限公司 | Preparation method and application of graphite carbon nitride/nitrogen-doped graphene/bismuth vanadate Z-type photocatalyst |
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