CN106876370A - A kind of electrostatic protection circuit structure - Google Patents
A kind of electrostatic protection circuit structure Download PDFInfo
- Publication number
- CN106876370A CN106876370A CN201710233248.6A CN201710233248A CN106876370A CN 106876370 A CN106876370 A CN 106876370A CN 201710233248 A CN201710233248 A CN 201710233248A CN 106876370 A CN106876370 A CN 106876370A
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- film layer
- metal film
- layer
- electric capacity
- electrostatic protection
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- 239000002184 metal Substances 0.000 claims description 50
- 238000009413 insulation Methods 0.000 claims description 9
- 230000003068 static effect Effects 0.000 abstract description 6
- 230000005611 electricity Effects 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention provides a kind of electrostatic protection circuit structure; it is connected with the first operating circuit, the second operating circuit and DC signal source; first operating circuit is connected with second operating circuit by holding wire; the electrostatic protection circuit structure is capacitance structure, and the capacitance structure is single electric capacity or at least two shunt capacitances.One end of the capacitance structure is connected with the holding wire, and the other end is connected with the DC signal source.The beneficial effect that electrostatic protection circuit structure of the invention is obtained is：When at least one of the holding wire, first operating circuit, the second operating circuit three are subject to static discharge; electrostatic charge can be stored in the capacitance structure; so as to be prevented effectively from holding wire because damage by static electricity produces broken string, while can effectively carry out electrostatic protection to above three.
Description
Technical field
The present invention relates to the electrostatic protection technical field of semiconductor devices, more particularly to a kind of electrostatic discharge protective circuit knot
Structure.
Background technology
With continuing to develop for industrial technology, Organic Light Emitting Diode (Organic Light Emitting Diode,
OLED) display has become very popular emerging flat-panel monitor product both at home and abroad, and OLED display has self-luminous, wide
The advantages of visual angle, short reaction time, color saturation high and strong reducing power.
But, in above-mentioned semiconductor device manufacturing process, the normal work and life-span of the generation of electrostatic to these devices
Strong influence is caused, so that the relevant research of electrostatic protection is also increasingly subject to the most attention of people.In semiconductor devices
In field, it is very common bad phenomenon, mesh that such as integrated circuit, TFT display and OLED display etc. have electrostatic damage
The preceding method for not avoiding electrostatic damage completely still.
The content of the invention
In view of the shortcomings of the prior art, the present invention provides a kind of electrostatic protection circuit structure, is occurring by capacitance structure
Electrostatic charge is stored in electric capacity during static discharge, solves the technical problem that electrostatic protection is carried out to semiconductor devices.
In order to solve the above technical problems, the present invention provides a kind of electrostatic protection circuit structure, with the first operating circuit, second
Operating circuit and DC signal source are connected, and first operating circuit is connected with second operating circuit by holding wire, institute
Electrostatic protection circuit structure is stated for capacitance structure, the capacitance structure is single electric capacity or at least two shunt capacitances, the electricity
The one end for holding structure is connected with the holding wire, and the other end is connected with the DC signal source.
Wherein, the capacitance structure can use following two structures：
The first structure：The capacitance structure includes multi-layer insulation film layer and first, second, third metal film layer,
The spaced and parallel setting of first, second, third metal film layer, adjacent double layer of metal film layer is insulated thin by least one of which
Film layer separates；
The first end of the described first, the 3rd metal film layer by set on the insulating thin layer between the two the
One through hole connects the first electrode to form electric capacity；It is arranged between first metal film layer and the 3rd metal film layer
Second metal film layer as electric capacity second electrode.
Second structure：Electric capacity in the capacitance structure includes multi-layer insulation film layer and the 4th, the 5th, the 6th, the
Seven and the 8th metal film layer, the four, the five, the six, the 7th and the 8th spaced and parallel setting of metal film layer is adjacent
Double layer of metal film layer is separated by least one of which insulating thin layer；
The first end of the four, the 6th and the 8th metal film layer passes through the adjacent insulating thin layer between the two
Second through hole and the third through-hole connection of upper setting, form the first electrode of electric capacity；
Second end of the 5th and the 7th metal film layer is by setting on the insulating thin layer between the two
Fourth hole is connected, and forms the second electrode of electric capacity.
In electrostatic protection circuit structure of the invention, the signal of the first operating circuit of connection and the second operating circuit
Line is connected with one end of the capacitance structure, and the other end of the capacitance structure connects the DC signal source, when the signal
When at least one of line, first operating circuit, the second operating circuit three are subject to static discharge, electrostatic charge can quilt
The capacitance structure is stored, so as to be prevented effectively from holding wire because damage by static electricity produces broken string, to the holding wire, the first work
Making circuit and the second operating circuit can effectively carry out electrostatic protection.
Brief description of the drawings
Fig. 1 is the schematic diagram of electrostatic protection circuit structure of the present invention；
Fig. 2 is the structural representation of the first embodiment of the capacitance structure in the present invention；
Fig. 3 is the sectional view along AA ' wire cuttings in Fig. 2；
Fig. 4 is the structural representation of the second embodiment of the capacitance structure in the present invention；
Fig. 5 is the sectional view along AA ' wire cuttings in Fig. 4.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, below in conjunction with drawings and Examples pair
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Embodiment 1：
Referring to Fig. 1,2,3, the present embodiment provides a kind of electrostatic protection circuit structure, is worked with the first operating circuit 1, second
Circuit 2 and DC signal source 4 are connected, and first operating circuit 1 is connected with second operating circuit 2 by holding wire 3, institute
Electrostatic protection circuit structure is stated for capacitance structure 5, the capacitance structure is single electric capacity or at least two shunt capacitances, the electricity
The one end for holding structure 5 is connected with the holding wire 3, and the other end is connected with the DC signal source 4.
In the present embodiment, the electric capacity 51 in the capacitance structure 5 includes multi-layer insulation film layer 515 and the first metal foil
Film layer 512, the second metal film layer 513 and the 3rd metal film layer 514, first metal film layer 512, the second metal foil
The spaced and parallel setting of 513 and the 3rd metal film layer of film layer 514, adjacent double layer of metal film layer is by least one of which insulation film
Layer separates；The first end of the metal film layer 514 of first metal film layer 512 and the 3rd is by the insulation between the two
The first through hole 511 set in film layer 515 connects the first electrode for forming electric capacity, is arranged at first metal film layer
Second metal film layer 513 between 512 and the 3rd metal film layer 514 as electric capacity second electrode.
Embodiment 2：
Referring to Fig. 1,4,5, the present embodiment provides a kind of electrostatic protection circuit structure, is worked with the first operating circuit 1, second
Circuit 2 and DC signal source 4 are connected, and first operating circuit 1 is connected with second operating circuit 2 by holding wire 3, institute
Electrostatic protection circuit structure is stated for capacitance structure 5, the capacitance structure 5 is single electric capacity or at least two shunt capacitances, described
One end of capacitance structure 5 is connected 3 with the holding wire, and the other end is connected with the DC signal source 4.
In the present embodiment, the electric capacity 52 in the capacitance structure 5 includes multi-layer insulation film layer 529 and the 4th metal
Film layer 524, fifth metal film layer 525, the 6th metal film layer 526, the 7th metal film layer 527 and the 8th metallic film
Layer 528, the 4th metal film layer 524, fifth metal film layer 525, the 6th metal film layer 526, the 7th metallic film
Layer 527 and the spaced and parallel setting of the 8th metal film layer 528, adjacent double layer of metal film layer is by least one of which insulating thin layer
Separate；The first end of the 4th metal film layer 524, the 6th metal film layer 526 and the 8th metal film layer 528 passes through phase
The second through hole 521 and third through-hole 522 set on the adjacent insulating thin layer between the two are connected, and form the of electric capacity 52
One electrode；Second end of the metal film layer 527 of the fifth metal film layer 525 and the 7th is by the insulation between the two
The fourth hole 523 set in film layer 529 is connected, and forms the second electrode of electric capacity 52.
In the above-described embodiments, the present invention connects one end of the capacitance structure 5, the electric capacity on the connecting line 3
The other end of structure 5 connects the DC signal source 4, when first operating circuit 1, second operating circuit 2, the letter
When at least one of number three of line 3 is subject to static discharge, electrostatic charge can be stored in the capacitance structure 5, so as to effectively enter
Row electrostatic protection.And the capacitance structure 5 can be by increasing electric capacity quantity in parallel with metal film layer in increase electric capacity
The number of plies realize the more electrostatic charges of storage so that antistatic effect is stronger, and electrostatic protection is better.
The above is the preferred embodiment of the present invention, for those skilled in the art, not
On the premise of departing from principle of the invention, some improvements and modifications can also be made, these improvements and modifications are also considered as the present invention
Protection domain.
Claims (3)
1. a kind of electrostatic protection circuit structure, is connected with the first operating circuit, the second operating circuit and DC signal source, and described
One operating circuit is connected with second operating circuit by holding wire, it is characterised in that：The electrostatic protection circuit structure is
Capacitance structure, the capacitance structure is single electric capacity or at least two shunt capacitances, one end of the capacitance structure and the letter
Number line connection, the other end is connected with the DC signal source.
2. electrostatic protection circuit structure according to claim 1, it is characterised in that：
Electric capacity in the capacitance structure includes multi-layer insulation film layer and first, second, third metal film layer, described the
First, the spaced and parallel setting of second, third metal film layer, adjacent double layer of metal film layer by least one of which insulating thin layer every
Open；
Described first, the first end of the 3rd metal film layer is led to by set on the insulating thin layer between the two first
Hole connects the first electrode to form electric capacity；It is arranged at the institute between first metal film layer and the 3rd metal film layer
State second electrode of second metal film layer as electric capacity.
3. a kind of electrostatic protection circuit structure according to claim 1, it is characterised in that：
Electric capacity in the capacitance structure includes multi-layer insulation film layer and the four, the five, the six, the 7th and the 8th metallic film
Layer, the four, the five, the six, the 7th and the 8th spaced and parallel setting of metal film layer, adjacent double layer of metal film layer by
At least one of which insulating thin layer separates；
The first end of the four, the 6th and the 8th metal film layer on the adjacent insulating thin layer between the two by setting
The second through hole and the third through-hole connection put, form the first electrode of electric capacity；
Second end of the 5th and the 7th metal film layer is by the 4th of setting on the insulating thin layer between the two
Through hole is connected, and forms the second electrode of electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710233248.6A CN106876370A (en) | 2017-04-11 | 2017-04-11 | A kind of electrostatic protection circuit structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710233248.6A CN106876370A (en) | 2017-04-11 | 2017-04-11 | A kind of electrostatic protection circuit structure |
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| Publication Number | Publication Date |
|---|---|
| CN106876370A true CN106876370A (en) | 2017-06-20 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710233248.6A Pending CN106876370A (en) | 2017-04-11 | 2017-04-11 | A kind of electrostatic protection circuit structure |
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| CN (1) | CN106876370A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107219699A (en) * | 2017-06-22 | 2017-09-29 | 武汉华星光电技术有限公司 | A kind of array base palte |
| CN111180442A (en) * | 2020-02-06 | 2020-05-19 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202549831U (en) * | 2011-09-06 | 2012-11-21 | 中国科学院微电子研究所 | An electrostatic discharge protector and a system composed thereof |
| CN103943634A (en) * | 2014-03-17 | 2014-07-23 | 京东方科技集团股份有限公司 | Array substrate, display device and capacitor structure of array substrate |
| CN104716135A (en) * | 2013-12-17 | 2015-06-17 | 台湾类比科技股份有限公司 | Electrostatic protection circuit |
-
2017
- 2017-04-11 CN CN201710233248.6A patent/CN106876370A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202549831U (en) * | 2011-09-06 | 2012-11-21 | 中国科学院微电子研究所 | An electrostatic discharge protector and a system composed thereof |
| CN104716135A (en) * | 2013-12-17 | 2015-06-17 | 台湾类比科技股份有限公司 | Electrostatic protection circuit |
| CN103943634A (en) * | 2014-03-17 | 2014-07-23 | 京东方科技集团股份有限公司 | Array substrate, display device and capacitor structure of array substrate |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107219699A (en) * | 2017-06-22 | 2017-09-29 | 武汉华星光电技术有限公司 | A kind of array base palte |
| CN111180442A (en) * | 2020-02-06 | 2020-05-19 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display device |
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Application publication date: 20170620 |