CN106872048A - A kind of infrared reading circuit suppressed with background - Google Patents
A kind of infrared reading circuit suppressed with background Download PDFInfo
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- CN106872048A CN106872048A CN201510916420.9A CN201510916420A CN106872048A CN 106872048 A CN106872048 A CN 106872048A CN 201510916420 A CN201510916420 A CN 201510916420A CN 106872048 A CN106872048 A CN 106872048A
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- infrared reading
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- 230000001629 suppression Effects 0.000 claims abstract description 9
- 230000006641 stabilisation Effects 0.000 claims abstract description 6
- 238000011105 stabilization Methods 0.000 claims abstract description 6
- 239000003990 capacitor Substances 0.000 claims description 8
- 230000010354 integration Effects 0.000 claims description 7
- 102100036441 Amyloid-beta A4 precursor protein-binding family A member 2 Human genes 0.000 claims description 3
- 101710093616 Amyloid-beta A4 precursor protein-binding family A member 2 Proteins 0.000 claims description 3
- 230000001174 ascending effect Effects 0.000 claims description 3
- 230000003139 buffering effect Effects 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 235000006679 Mentha X verticillata Nutrition 0.000 claims 1
- 235000002899 Mentha suaveolens Nutrition 0.000 claims 1
- 235000001636 Mentha x rotundifolia Nutrition 0.000 claims 1
- 230000005855 radiation Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000001931 thermography Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The invention discloses a kind of infrared reading circuit suppressed with background, reading circuit suppresses element circuit, new background suppression current source, output buffer circuit, column select circuit and constitutes by new background.Circuit structure is simple, and function admirable greatly improves the signal to noise ratio of infrared focal plane array, expands its range of application, can provide stabilization, background that is reliable and not influenceed by threshold voltage variation and suppress the background suppression current source of electric current.
Description
Technical field
The present invention relates to a kind of infrared reading circuit suppressed with background, it is adaptable to infrared thermal imaging field.
Background technology
Infrared focal plane array IRFPA (Infrared Focal Plane
Array) it is beginning of the eighties late 1970s, grows up under the promotion of national defense applications and other strategy and tactics applications, it is the core component of infra-red thermal imaging system, is made up of Infrared Detectors and reading circuit two parts.Infra-red radiation is converted into the electric signal that people can measure by Infrared Detectors, and the ultra-weak electronic signal obtained by Infrared Detectors is then integrated amplification and figure adjustment by reading circuit.
Infra-red radiation is the electromagnetic wave between visible ray and microwave, wavelength between the mm of 770nm~1, spectrally positioned at red light outside.When being propagated in an atmosphere due to infra-red radiation, the absorption and scattering of air various composition can be subject to, so as to cause the gradually decay of radiant power, the photon density radiated according to detection target background in infrared imaging application, have low background and background high point.Under the image-forming condition of many infrared systems, target is at a fairly low with the contrast of background radiation.Contrast is defined as the ratio of photon flux change caused by ambient temperature change 1K and whole photon flux.It can thus be seen that with the increase of infrared wavelength, background radiation more and more higher, contrast is less and less.The shot noise of detector with flow through the electric current of detector into square root relationship, with the reduction of contrast, if the time of integration falls short of, signal code will be flooded by shot noise, and can not detect.Traditional reading circuit is all that the total current (background current and signal code) that detector is produced is integrated together, so detecting the small-signal being hidden under background high to ensure enough times of integration under overall background electric current, it is necessary to have great integrating capacitor.But element circuit limited area, is only possible to comprising less integrating capacitor in reading circuit, overall background electric current can quickly make its saturation, and the time of integration is limited.Especially in long wave applications, the larger dark current of wave detector long itself can further shorten the time of integration.Even if additionally, not considering element circuit area, big integrating capacitor is integrated in reading circuit, noise very high can be also introduced.Background current is suppressed in the integral process of circuit, only signal code is integrated, be that the performance of a solution Infrared Detectors is restricted by dark current and noise current corresponding with this.Therefore, study detector dark current model, analyze silicon-based devices dark current mechanism and source, for understand we device level, improve device performance, find suppress dark current approach all its have important practical significance.
The content of the invention
The present invention provides a kind of infrared reading circuit suppressed with background, simple structure, function admirable greatly improves the signal to noise ratio of infrared focal plane array, expand its range of application, stabilization, background that is reliable and not influenceed by threshold voltage variation can be provided and suppress the background suppression current source of electric current.
The technical solution adopted in the present invention is：
The infrared reading circuit suppressed with background suppresses element circuit, new background suppression current source, output buffer circuit, column select circuit and constitutes by new background.
The buffering that the new background suppresses element circuit and includes that operational amplifier is constituted with ascending pipe Minj is directly injected into structure (BDI)；Integration control switching tube Mintl, Mint2;Reset switch pipe Mrst；Row selecting switch pipe Mrstl；One input pipe Mcl of rear class row amplifier；Integrating capacitor Cint；By Ml, M2, the background that M3 is constituted suppresses current source.BDI input structures can provide the Infrared Detectors bias and injection efficiency high of stabilization, using single-stage Telescopic cascode operational amplifier.When switching tube M2 is turned on, M1, M3 constitutes Self-cascading structure, reasons for its use suppresses electric current Isub not to be influenceed by integral voltage Vint substantially, it is ensured that element circuit has the good linearity, in the integral process of circuit, control signal Yz controlling switch pipes M2 is suppressed by background, to determine that background suppresses the conducting and shut-off of current source, background is produced to suppress electric current by phased manner, so as to subtract the integral charge that background current Ib accumulates in integrating capacitor.
When the new background suppresses the suppression control signal Yz controlling switch pipes M2 conductings of current source background, M1, M3 pipe are equivalent into Self-cascading structure.Opened because background suppresses current source interruption, ON time is extremely short, and M1, M3 can be made to be operated in strong inversion area.Therefore in order to improve the output impedance of Self-cascading structure, the influence that integral voltage Vint suppresses electric current Isub to background is reduced, and the linearity of element circuit is improved, the size of M1 pipes and the channel length of M3 pipes should be increased.A bias voltage is only needed, circuit is simplified, it is easier to use.In order to increase the adjustable range of bias voltage Vin, to facilitate test, M1 pipes use Low threshold pipe, and it differs about 130mV with the threshold voltage that closes of M3.During Vin=1.23V, in the range of 0.7V~3.55V, background suppresses electric current Isub not to be influenceed by integral voltage Vint substantially.M1, M3 pipe are operated in strong inversion area, reduce the influence that threshold V T suppresses electric current Isub to background.
The output buffer circuit is using a traditional two-stage calculation amplifier for being connected into unity gain buffer as last output buffer, this requires that infrared focal plane read-out circuit output buffer can rapidly driving load, power consumption can not be too big simultaneously, it is necessary to the characteristics of possessing big Slew Rate, big output voltage swing.
The column select circuit is made up of 8 shift registers, there is 3 control signals:Column selection input signal Lin, column selection the first clock signal Lclkl and column selection second clock signal Lclk2, two output O1 and O2, column selection input signal Lin is a short pulse signal, column selection the first clock signal Lclkl and column selection second clock signal Lclk2 is a pair of non-overlapping clock signals, Ol, 02 output array selecting signal Ln (i), L (i), the two is a pair of inversion signals.
The beneficial effects of the invention are as follows：Simple structure, function admirable greatly improves the signal to noise ratio of infrared focal plane array, expands its range of application, can provide stabilization, background that is reliable and not influenceed by threshold voltage variation and suppress the background suppression current source of electric current.
Brief description of the drawings
The present invention is further described with reference to the accompanying drawings and examples.
Fig. 1 is that new background of the invention suppresses element circuit.
Fig. 2 is that new background of the invention suppresses current source.
Fig. 3 is output buffer circuit of the invention.
Fig. 4 is column select circuit of the invention.
In figure：1. column shift register.
Specific embodiment
The invention will be further described with reference to the accompanying drawings and examples.
Such as Fig. 1, new background suppresses element circuit includes that operational amplifier is directly injected into structure (BDI) with the buffering of ascending pipe Minj compositions；Integration control switching tube Mintl, Mint2;Reset switch pipe Mrst；Row selecting switch pipe Mrstl；One input pipe Mcl of rear class row amplifier；Integrating capacitor Cint；By Ml, M2, the background that M3 is constituted suppresses current source.BDI input structures can provide the Infrared Detectors bias and injection efficiency high of stabilization, using single-stage Telescopic cascode operational amplifier.When switching tube M2 is turned on, M1, M3 constitutes Self-cascading structure, reasons for its use suppresses electric current Isub not to be influenceed by integral voltage Vint substantially, it is ensured that element circuit has the good linearity, in the integral process of circuit, control signal Yz controlling switch pipes M2 is suppressed by background, to determine that background suppresses the conducting and shut-off of current source, background is produced to suppress electric current by phased manner, so as to subtract the integral charge that background current Ib accumulates in integrating capacitor.
Such as Fig. 2, when new background suppresses the suppression control signal Yz controlling switch pipes M2 conductings of current source background, M1, M3 pipe are equivalent into Self-cascading structure.Opened because background suppresses current source interruption, ON time is extremely short, and M1, M3 can be made to be operated in strong inversion area.Therefore in order to improve the output impedance of Self-cascading structure, the influence that integral voltage Vint suppresses electric current Isub to background is reduced, and the linearity of element circuit is improved, the size of M1 pipes and the channel length of M3 pipes should be increased.A bias voltage is only needed, circuit is simplified, it is easier to use.In order to increase the adjustable range of bias voltage Vin, to facilitate test, M1 pipes use Low threshold pipe, and it differs about 130mV with the threshold voltage that closes of M3.During Vin=1.23V, in the range of 0.7V~3.55V, background suppresses electric current Isub not to be influenceed by integral voltage Vint substantially.M1, M3 pipe are operated in strong inversion area, reduce the influence that threshold V T suppresses electric current Isub to background.
Such as Fig. 3, output buffer circuit is using a traditional two-stage calculation amplifier for being connected into unity gain buffer as last output buffer, this requires that infrared focal plane read-out circuit output buffer can rapidly driving load, power consumption can not be too big simultaneously, it is necessary to the characteristics of possessing big Slew Rate, big output voltage swing.
As Fig. 4, column select circuit are made up of 8 shift registers, there are 3 control signals:Column selection input signal Lin, column selection the first clock signal Lclkl and column selection second clock signal Lclk2, two output O1 and O2, column selection input signal Lin is a short pulse signal, column selection the first clock signal Lclkl and column selection second clock signal Lclk2 is a pair of non-overlapping clock signals, Ol, 02 output array selecting signal Ln (i), L (i), the two is a pair of inversion signals.
Claims (8)
1. it is a kind of with background suppress infrared reading circuit, it is characterized in that：Described infrared reading circuit suppresses element circuit, new background suppression current source, output buffer circuit, column select circuit and constitutes by new background.
2. it is according to claim 1 it is a kind of with background suppress infrared reading circuit, it is characterized in that：The buffering that the new background suppresses element circuit and includes that operational amplifier is constituted with ascending pipe Minj is directly injected into structure (BDI), integration control switching tube Mint, Mint2, reset switch pipe Mrst, row selecting switch pipe Mrstl, an input pipe Mcl of rear class row amplifier, integrating capacitor Cint.
3. it is according to claim 1 it is a kind of with background suppress infrared reading circuit, it is characterized in that：Described new background suppresses in element circuit, and by Ml, M2, the background that M3 is constituted suppresses current source, and BDI input structures can provide the Infrared Detectors bias and injection efficiency high of stabilization, using single-stage Telescopic cascode operational amplifier.
4. it is according to claim 1 it is a kind of with background suppress infrared reading circuit, it is characterized in that：Described new background suppresses in element circuit, M1, M3 composition Self-cascading structures, and reasons for its use suppresses electric current Isub not to be influenceed by integral voltage Vint substantially, it is ensured that element circuit has the good linearity.
5. it is according to claim 1 it is a kind of with background suppress infrared reading circuit, it is characterized in that：When the new background suppresses the suppression control signal Yz controlling switch pipes M2 conductings of current source background, M1, M3 pipe are equivalent into Self-cascading structure.
6. it is according to claim 1 it is a kind of with background suppress infrared reading circuit, it is characterized in that：The new background suppresses the size of current source circuit increase M1 pipes and the channel length of M3 pipes, to improve the output impedance of Self-cascading structure, reduces the influence that integral voltage Vint suppresses electric current Isub to background, improves the linearity of element circuit.
7. it is according to claim 1 it is a kind of with background suppress infrared reading circuit, it is characterized in that：The output buffer circuit is using a traditional two-stage calculation amplifier for being connected into unity gain buffer as last output buffer.
8. it is according to claim 1 it is a kind of with background suppress infrared reading circuit, it is characterized in that：The column select circuit is made up of 8 shift registers, there is 3 control signals, column selection input signal Lin, column selection the first clock signal Lclkl and column selection second clock signal Lclk2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510916420.9A CN106872048A (en) | 2015-12-13 | 2015-12-13 | A kind of infrared reading circuit suppressed with background |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510916420.9A CN106872048A (en) | 2015-12-13 | 2015-12-13 | A kind of infrared reading circuit suppressed with background |
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| CN106872048A true CN106872048A (en) | 2017-06-20 |
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| CN201510916420.9A Pending CN106872048A (en) | 2015-12-13 | 2015-12-13 | A kind of infrared reading circuit suppressed with background |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109238476A (en) * | 2018-10-29 | 2019-01-18 | 南京方旭智芯微电子科技有限公司 | Infrared focal plane read-out circuit and infrared focal plane detector |
| CN109238477A (en) * | 2018-10-29 | 2019-01-18 | 南京方旭智芯微电子科技有限公司 | Infrared focal plane read-out circuit and infrared focal plane detector |
-
2015
- 2015-12-13 CN CN201510916420.9A patent/CN106872048A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109238476A (en) * | 2018-10-29 | 2019-01-18 | 南京方旭智芯微电子科技有限公司 | Infrared focal plane read-out circuit and infrared focal plane detector |
| CN109238477A (en) * | 2018-10-29 | 2019-01-18 | 南京方旭智芯微电子科技有限公司 | Infrared focal plane read-out circuit and infrared focal plane detector |
| CN109238476B (en) * | 2018-10-29 | 2024-05-28 | 南京方旭智芯微电子科技有限公司 | Infrared focal plane reading circuit and infrared focal plane detector |
| CN109238477B (en) * | 2018-10-29 | 2024-05-28 | 南京方旭智芯微电子科技有限公司 | Infrared focal plane reading circuit and infrared focal plane detector |
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Application publication date: 20170620 |