CN106856645A - Radiator structure and preparation method thereof - Google Patents
Radiator structure and preparation method thereof Download PDFInfo
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- CN106856645A CN106856645A CN201510909776.XA CN201510909776A CN106856645A CN 106856645 A CN106856645 A CN 106856645A CN 201510909776 A CN201510909776 A CN 201510909776A CN 106856645 A CN106856645 A CN 106856645A
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- capillary
- layer
- groove
- supporting layer
- supporting
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/06—Thermal details
- H05K2201/064—Fluid cooling, e.g. by integral pipes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A kind of preparation method of radiator structure, its step is as follows：One first copper foil layer, one second copper foil layer and one the 3rd copper foil layer are provided and make it respectively to form one first capillary layer, one second capillary layer and a supporting layer；First capillary layer includes multiple first capillary grooves, and second capillary layer includes multiple second capillary grooves, and the supporting layer includes multiple supporting layer grooves through the supporting layer；First capillary layer and second capillary layer are pressed together on opposite two surface of the supporting layer respectively, and causing that first capillary groove is relative with second capillary groove, each supporting layer groove is relative with least one first capillary groove and at least one second capillary groove and communicates and forms a hollow chamber；And cooling medium material is injected into the hollow chamber.The invention further relates to a kind of radiator structure.
Description
Technical field
The present invention relates to heat dissipation for circuit board technology, more particularly to a kind of radiator structure and preparation method thereof.
Background technology
As process chip develops towards high frequency, high integration direction, display develops towards pixel ratio direction high, is equipped with
The heat dissipation problem of the electronic equipment of Electrosurgical treatment equipment and pixel ratio display high is increasingly highlighted.At present, use high conduction industry more
By heat radiation mode be diffused into air heat by the material of heat.In the small-sized electronic product such as mobile phone field, industry is most normal
Heat radiation diffusion material is steel disc.But, when steel disc is in the environment for being unfavorable for radiating (for example, people can use holding hand
Machine, the radiating effect of human body is poor) when, radiating effect is undesirable.
The content of the invention
In view of this, it is necessary to provide and a kind of can solve the problem that radiator structure of above-mentioned technical problem and preparation method thereof.
A kind of radiator structure, including one first capillary layer, a supporting layer and one second capillary layer, first capillary layer and should
Second capillary layer is respectively formed on opposite two surface of the supporting layer, and first capillary layer includes multiple first capillary grooves,
Second capillary layer includes multiple second capillary grooves, and the supporting layer includes multiple supporting layer grooves through the supporting layer, many
Individual first capillary groove and multiple second capillary groove are relative, each supporting layer groove and at least one first capillary
Groove and at least one second capillary groove are relative and communicate, so as to constitute a hollow chamber, are formed with the hollow chamber
Cooling medium.
A kind of preparation method of radiator structure, its step is as follows：One first copper foil layer, one second copper foil layer and one are provided
Three copper foil layers simultaneously make it to form one first capillary layer, one second capillary layer and a supporting layer respectively；The first capillary layer bag
Multiple first capillary grooves are included, second capillary layer includes multiple second capillary grooves, the supporting layer includes multiple through the branch
Support the supporting layer groove of layer；First capillary layer and second capillary layer are pressed together on opposite two surface of the supporting layer respectively
On, and cause first capillary groove it is relative with second capillary groove, each supporting layer groove and at least one this first
Capillary groove and at least one second capillary groove are relative and communicate and form a hollow chamber；And be injected into cooling medium
In the hollow chamber.
Compared with prior art, the present invention is provided radiator structure and its heat dissipating method, the support trenches are increased in this
There is cooling medium in the volume of plenum chamber and hollow chamber, undergone phase transition using cooling medium and transmit defeated substantial amounts of heat, radiating effect
It is really relatively good.
Brief description of the drawings
Fig. 1 is the section view of the first copper foil layer, the second copper foil layer and the 3rd copper foil layer that first embodiment of the invention is provided
Figure.
Fig. 2 be the first copper foil layer shown in Fig. 1, the second copper foil layer and the 3rd copper foil layer are made to be formed the first capillary layer,
Sectional view after second capillary layer and supporting layer.
Fig. 3 is the sectional view after the surface of the capillary groove shown in Fig. 2 and supporting layer groove forms brown film.
Fig. 4 is the sectional view after pressing together the first capillary layer shown in Fig. 3, the second capillary layer and supporting layer.
Fig. 5 is after injecting cooling medium in the hollow chamber shown in Fig. 4, to form the sectional view of radiator structure.
Fig. 6 is the top view of the radiator structure shown in Fig. 5.
Fig. 7 is the working state figure of the radiator structure shown in Fig. 5.
Fig. 8 is the sectional view of the radiator structure that first embodiment of the invention is provided.
Main element symbol description
Following specific embodiment will further illustrate the present invention with reference to above-mentioned accompanying drawing.
Specific embodiment
With reference to will be with reference to drawings and Examples, radiator structure provided the present invention and preparation method thereof be made further
Detailed description.
Fig. 1-7 are referred to, first embodiment of the invention provides a kind of preparation method of radiator structure, and its step includes：
The first step, refer to Fig. 1, there is provided one first copper foil layer 10, one second copper foil layer 20 and one the 3rd copper foil layer 30.
First copper foil layer 10 includes one first bottom surface 11, and second copper foil layer 20 includes one second bottom surface 21, the 3rd
Copper foil layer 30 includes a top surface 31 and threeth bottom surface 32 opposite with the top surface 31.
Second step, refer to Fig. 2, and multiple first capillary grooves 141, multiple second capillary grooves 151 and many are formed respectively
Individual supporting layer groove 162.
First capillary groove 141 is formed to the inner recess of first copper foil layer 10 from first bottom surface 11.Each
Minimum interval D1 between the Breadth Maximum d1=10-60um of first capillary groove 141, each two first capillary groove is
=10-60um.Specifically, first capillary groove 141 can be made by way of etching or laser ablation.In this implementation
In example, first capillary groove 141 leads to overetched mode and is formed.
Second capillary groove 151 is formed from second bottom surface 21 to the inner recess of second copper foil layer 20.Each should
Minimum interval between the Breadth Maximum d2=10-60um of the second capillary groove 151, each two second capillary groove is D2=
10-60um.Specifically, second capillary groove 151 can be made by way of etching or laser ablation.In the present embodiment
In, second capillary groove 151 leads to overetched mode and is formed.
The supporting layer groove 162 runs through the 3rd copper foil layer 30 from the top surface 31 to the direction of the 3rd bottom surface 32.Each two
A supporting part 161 is formed between the supporting layer groove 162.The supporting part 161 is substantially in rectangular-shape, multiple supporting parts
161 make multiple supporting layer grooves 162 spaced.One width d3 of the supporting layer groove 162 is more than one this first mao
The Breadth Maximum d1 of a fine groove 141 and Breadth Maximum d2 for second capillary groove 151.That is, d3>D1 and d3>d2.Often
Minimum interval D1 and every two between the width D 3 of the individual supporting part 161 first capillary groove 141 adjacent more than each two
Minimum interval D2 between individual adjacent second capillary groove 151.That is, D3>D1 and D3>D2.Specifically, the supporting layer ditch
Groove 162 can be made up of modes such as etching, laser ablation, machine cuts.In the present embodiment, the supporting layer groove 162 leads to
Overetched mode is formed.
3rd step, refers to Fig. 3, respectively to first capillary groove 141, second capillary groove 151, the supporting layer ditch
The inwall of groove 162, first bottom surface 11, the bottom surface 32 of the second bottom surface 21 and the 3rd carry out brown treatment, and brown is formed respectively
Film 142,152,163, and then respectively obtain one first capillary layer 140, one second capillary layer 150 and a supporting layer 160.
By first capillary groove 141, second capillary groove 151, the supporting layer groove 162 that brown is processed, its
Capillary attraction increases, and is more beneficial for the flowing of liquid.
4th step, refers to Fig. 4, and first capillary layer 140 and second capillary layer 150 are respectively formed at into the supporting layer
On 160 bottom surface 32 of top surface 31 and the 3rd.
Specifically, first capillary layer 140 and second capillary layer 150 adhere to the branch respectively by a glue-line 170
Support the surrounding of layer 160.The glue-line 170 has Z-direction (above-below direction i.e. shown in Fig. 4) on state characteristic, can be by this first mao
Sub-layers 140, second capillary layer 150 and the supporting layer 160 are electrically connected with.In circuit, corresponding to first mao of the glue-line 170
The part of 140 and second capillary layer of sub-layers 150 can be directly grounded, and will not shield and disturb the signal of electronic equipment.
The supporting layer 160 primarily serves the effect for supporting first capillary layer 140 and second capillary layer 150.The top surface
31 is relative with first bottom surface 11, and the 3rd bottom surface 32 is relative with second bottom surface 21.Each supporting layer groove 162 with least
One first capillary groove 141 and at least one second capillary groove 151 is relative and communicates and forms a hollow chamber
180.The hollow chamber 180 as cooling medium 190 (seeing below) flow channel.
In the present embodiment, first capillary layer 140 and second capillary layer of the hollow chamber 180 are corresponded not only to
150 position distribution has multiple first capillary grooves 141 and multiple second capillary grooves 151, corresponding with the supporting part 161
First capillary layer 140 and second capillary layer 150 position be also distributed with multiple first capillary grooves 141 and it is multiple should
Second capillary groove 151.It is distributed in first capillary layer 140 corresponding with the supporting part 161 and second capillary layer 150
Multiple first capillary grooves 141 and multiple second capillary grooves 151 of position allow liquid in the different changes
Transmission in plenum chamber 180.
5th step, refers to Fig. 5, to injection cooling medium 190 in the hollow chamber 180, and then forms a radiator structure
100。
Need to carried out under vacuum conditions to the cooling medium 190 is injected in the hollow chamber 180.
Specifically, Fig. 5-6 are referred to, first embodiment of the invention provides a kind of radiator structure 100, the radiator structure 100
Including one first capillary layer 140, one second capillary layer 150, a supporting layer 160 and a glue-line 170.First capillary layer 140 and
Second capillary layer 150 is bonded on two opposite surfaces of first supporting layer 160 by the glue-line 170.
First capillary layer 140 include one first bottom surface 11, from inside from first bottom surface 11 to first capillary layer 140
Depression is formed with multiple first capillary grooves 141.Multiple first capillary grooves 141 are spaced.Each the first capillary ditch
The Breadth Maximum d1=10-60um of groove 141, the minimum interval D1 between two first capillary grooves is=10-60um.Specifically
Ground, first capillary groove 141 can be made by way of etching or laser ablation.In the present embodiment, this first mao
Fine groove 141 leads to overetched mode and is formed.
Second capillary layer 150 include a second surface 21, from inside from the second surface 21 to second capillary layer 150
Depression is formed with multiple second capillary grooves 151.Multiple second capillary grooves 151 are spaced.Each the second capillary ditch
The Breadth Maximum d2=10-60um of groove 151, the minimum interval between two second capillary grooves is D2=10-60um.Specifically
Ground, second capillary groove 151 can be made by way of etching or laser ablation.In the present embodiment, this second mao
Fine groove 151 leads to overetched mode and is formed.
The supporting layer 160 is used to support first capillary layer 140 and second capillary layer 150.The supporting layer 160 includes
One top surface 31 and threeth bottom surface 32 opposite with the top surface 31.The top surface 31 is relative with first bottom surface 11, the 3rd bottom surface
32 is relative with second bottom surface 21.From the top surface 31 multiple supporting layer grooves 162 are formed with to the depression of the 3rd bottom surface 32.The branch
Support layer groove 162 runs through the supporting layer 160.A supporting part 161 is formed between each two supporting layer groove 162.The branch
Support part 161 is substantially in rectangular-shape, multiple supporting parts 161 make it is multiple this supporting layer groove 162 is spaced comes.
Specifically, the supporting layer groove 162 can be made up of modes such as etching, laser ablation, machine cuts.In this reality
Apply in example, the supporting layer groove 162 leads to overetched mode and formed.
One width d3 of the supporting layer groove 162 is more than a Breadth Maximum d1 and for first capillary groove 141
The Breadth Maximum d2 of individual second capillary groove 151.That is, d3>D1 and d3>d2.The adjacent supporting layer groove 162 of each two
Between interval D 3 it is adjacent more than minimum interval D1 and each two between adjacent first capillary groove 141 of each two should
Minimum interval D2 between second capillary groove 151.That is, D3>D1 and D3>D2.That is, the density of the supporting layer groove 162
Less than first capillary groove 141 and the density of second capillary groove 151.
First capillary layer 140 and second capillary layer 150 adhere to the supporting layer 160 respectively by the glue-line 170
Surrounding.The glue-line 170 has Z-direction on state characteristic, can be by first capillary layer 140, second capillary layer 150 and the branch
Support layer 160 is electrically connected with.In circuit, the first capillary layer 140 and the part of the second capillary layer 150 corresponding to the glue-line 170 can
To be directly grounded, and will not shield and disturb the signal of electronic equipment.
Each the supporting layer groove 162 and at least one first capillary groove 141 and at least one second capillary ditch
Groove 151 forms a hollow chamber 180.Cooling medium 190 is formed with the hollow chamber 180.The cooling medium 190 undergoes phase transition
Substantially 30~40 DEG C of temperature range.
In the present embodiment, first capillary layer 140 and second capillary layer of the hollow chamber 180 are corresponded not only to
150 position distribution has multiple first capillary grooves 141 and multiple second capillary grooves 151, corresponding with the supporting part 161
First capillary layer 140 and second capillary layer 150 position be also distributed with multiple first capillary grooves 141 and it is multiple should
Second capillary groove 151.It is distributed in first capillary layer 140 corresponding with the supporting part 161 and second capillary layer 150
Multiple first capillary grooves 141 and multiple second capillary grooves 151 of position connect adjacent hollow chamber 180, so that
Allow liquid in the different interior circulations of hollow chamber 180.
In order to further improve the hair of first capillary groove 141, second capillary groove 151, the supporting layer groove 162
Spy exerts oneself, and the cooling medium 190 after liquefaction is smoothly back to the position before the vaporization of the cooling medium 190,
First capillary groove 141, second capillary groove 151, the inwall of the supporting layer groove 162, first bottom surface 11, this
Brown treatment is carried out on two bottom surfaces 21 and the 3rd bottom surface 32, brown film 142,152,163 is formed respectively.
It is understood that in other embodiments, first capillary groove 141, second capillary groove 151, the branch
The inwall of support layer groove 162, first bottom surface 11, the bottom surface 32 of the second bottom surface 21 and the 3rd can not also be carried out at brown
Reason.That is, the radiator structure 100 does not include brown film 142,152,163.
Fig. 7 is refer to, the radiator structure 100 can be attached to the surface of an electronic component 200.In the present embodiment, this second
The surface away from the supporting layer 160 of capillary layer 150 fits with the surface of the electronic component.
In the present embodiment, when the adstante febre of electronic component 200, the cooling medium 190 in the hollow chamber 180
The heat of the electronic component 200 can be absorbed, is undergone phase transition when the heat that the cooling medium 190 absorbs reaches the cooling medium 190
Critical-temperature when, the cooling medium 190 can reach first capillary by vaporizing liquid into gas via the hollow chamber 180
Layer 140, cooling down condensation again in first capillary layer 140 turns into liquid, then via multiple first capillary grooves 141 and the branch
Support layer groove 162 is back in multiple second capillary grooves 151, forms a heat transmission circulation, and then the electronics is first
The heat of part 200 takes the external world to and goes.
Fig. 8 is referred to, second embodiment of the invention provides a kind of radiator structure 300, and the radiator structure 300 includes one first
Capillary layer 340, one second capillary layer 350, a supporting layer 360 and glue-line 370.First capillary layer 340 includes multiple first mao
Fine groove 341.Second capillary layer 350 includes multiple second capillary grooves 351.The supporting layer 360 includes multiple supporting layer ditches
Groove 362.The supporting layer groove 362 runs through the supporting layer 360.Each this supporting layer groove 362 and at least one first capillary
Second capillary groove 351 formation of groove 341 and at least one, one hollow chamber 380.Cooling is formed with the hollow chamber 380
Medium 390.The radiator structure 300 is differed only in the radiator structure 100：First capillary groove 341, the second capillary ditch
Groove 351 and the correspondence of supporting layer groove 362, multiple first capillary grooves 341 and multiple second capillary grooves 351 and one
The supporting layer groove 362 constitutes a hollow chamber 380 for closing.That is, liquid can only be in the same hollow chamber 380
Circulation.
Radiator structure and preparation method thereof that the present invention is provided, the radiator structure first capillary layer with this second mao
A supporting layer is provided between sub-layers, the supporting layer includes the hair of multiple supporting layer grooves, each supporting layer groove and capillary layer
Fine groove constitutes a hollow chamber, 1) can play a supporting role, the volume of the hollow chamber can be increased again；2) hollow chamber
Interior to undergo phase transition to transmit substantial amounts of heat using the cooling medium filled with cooling medium, radiating effect is relatively good；3) capillary
Groove has carried out brown treatment with the surface of supporting layer groove, can further increase the capillary groove and the supporting layer groove
Capillary force, advantageously in the flowing of liquid, improve the efficiency of radiating.
It is understood that above example is only used for illustrating the present invention, limitation of the invention is not used as.For this
For the those of ordinary skill in field, other various corresponding changes and deformation that technology according to the present invention design is made, all
Fall within the protection domain of the claims in the present invention.
Claims (10)
1. a kind of preparation method of radiator structure, its step is as follows：
One first copper foil layer, one second copper foil layer and one the 3rd copper foil layer are provided and make it respectively to form one first capillary
Layer, one second capillary layer and a supporting layer；First capillary layer includes multiple first capillary grooves, and second capillary layer includes many
Individual second capillary groove, the supporting layer includes multiple supporting layer grooves through the supporting layer；
First capillary layer and second capillary layer are pressed together on opposite two surface of the supporting layer respectively, and cause this first
Capillary groove is relative with second capillary groove, each supporting layer groove and at least one first capillary groove and at least one
Individual second capillary groove is relative and communicates and forms a hollow chamber；And
Cooling medium material is injected into the hollow chamber.
2. the preparation method of radiator structure as claimed in claim 1, it is characterised in that by first capillary layer and this second
Before capillary layer is pressed together on the step on opposite two surface of the supporting layer respectively, also including step：Respectively to first capillary
Groove, second capillary groove and the supporting layer groove carry out brown treatment.
3. the preparation method of radiator structure as claimed in claim 1, it is characterised in that the supporting layer also includes multiple support
Portion, multiple supporting parts by it is the plurality of this supporting layer groove is spaced comes；First capillary layer and second capillary layer are equal
Adhere to the surrounding of the supporting layer respectively by a glue-line；The glue-line has Z-direction on state characteristic and is electrically connected with this first mao
Sub-layers, second capillary layer and the supporting layer.
4. the preparation method of radiator structure as claimed in claim 1, it is characterised in that first capillary groove, this second mao
The preparation method of fine groove and the supporting layer groove is the one kind in etching, laser ablation mode.
5. the radiator structure that a kind of preparation method of the radiator structure any one of use the claims 1-4 is made,
Including one first capillary layer, a supporting layer and one second capillary layer, first capillary layer and second capillary layer are respectively formed at
On opposite two surface of the supporting layer, first capillary layer includes multiple first capillary grooves, and second capillary layer includes multiple
Second capillary groove, the supporting layer includes multiple supporting layer grooves through the supporting layer, multiple first capillary grooves and many
Individual second capillary groove is relative, each supporting layer groove and at least one first capillary groove and at least one this second
Capillary groove is relative and communicates, so as to constitute a hollow chamber, cooling medium is formed with the hollow chamber.
6. radiator structure as claimed in claim 5, it is characterised in that the supporting layer also includes multiple supporting parts, multiple branch
Support part by it is the plurality of this supporting layer groove is spaced comes；First capillary layer and second capillary layer are by a glue-line point
The surrounding of the supporting layer is not adhered to；The glue-line there is Z-direction on state characteristic and be electrically connected with first capillary layer, this second mao
Sub-layers and the supporting layer.
7. radiator structure as claimed in claim 6, it is characterised in that d1=d2=10-60um, D1=D2=10-60um, its
In, d1, d2, the Breadth Maximum for being respectively first capillary groove and second capillary groove, D1, D2 be respectively each two this
The minimum interval between second capillary groove of minimum interval and each two between one capillary groove.
8. radiator structure as claimed in claim 5, it is characterised in that the density of the supporting layer groove is less than the first capillary ditch
The density of groove and second capillary groove.
9. radiator structure as claimed in claim 5, it is characterised in that part first capillary groove and part second capillary
Groove is distributed in the position corresponding with the supporting part and connects the adjacent hollow chamber.
10. radiator structure as claimed in claim 5, it is characterised in that first capillary groove, second capillary groove and should
Supporting layer groove is corresponded to and collectively constitutes the hollow chamber of closing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510909776.XA CN106856645B (en) | 2015-12-09 | 2015-12-09 | Radiator structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510909776.XA CN106856645B (en) | 2015-12-09 | 2015-12-09 | Radiator structure and preparation method thereof |
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| CN106856645A true CN106856645A (en) | 2017-06-16 |
| CN106856645B CN106856645B (en) | 2019-04-26 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119392A (en) * | 2018-08-06 | 2019-01-01 | 华进半导体封装先导技术研发中心有限公司 | The device encapsulation structure and preparation method thereof to be radiated by fluid channel |
| CN109121282A (en) * | 2018-08-06 | 2019-01-01 | 华进半导体封装先导技术研发中心有限公司 | A kind of plate body radiator structure and preparation method thereof |
| WO2020215803A1 (en) * | 2019-04-25 | 2020-10-29 | 华为技术有限公司 | Heat dissipation apparatus, circuit board, and electronic device |
| CN112616242A (en) * | 2020-12-08 | 2021-04-06 | 武汉光迅科技股份有限公司 | Circuit board and manufacturing method thereof |
| CN115066083A (en) * | 2022-06-01 | 2022-09-16 | 维沃移动通信有限公司 | Circuit board, processing method thereof and electronic equipment |
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| CN101102657A (en) * | 2007-07-24 | 2008-01-09 | 杨洪武 | Micro slot cluster liquid absorption chip, micro slot cluster liquid absorption core and integrated heat thermal tube radiator |
| CN104582234A (en) * | 2013-10-12 | 2015-04-29 | 富葵精密组件(深圳)有限公司 | Heat radiating device, fabricating method and flexible circuit board with heat radiating device |
| CN104754926A (en) * | 2015-04-14 | 2015-07-01 | 厦门烯成科技有限公司 | Heat-conducting sheet and production method of base plate thereof |
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| CN101102657A (en) * | 2007-07-24 | 2008-01-09 | 杨洪武 | Micro slot cluster liquid absorption chip, micro slot cluster liquid absorption core and integrated heat thermal tube radiator |
| CN104582234A (en) * | 2013-10-12 | 2015-04-29 | 富葵精密组件(深圳)有限公司 | Heat radiating device, fabricating method and flexible circuit board with heat radiating device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109119392A (en) * | 2018-08-06 | 2019-01-01 | 华进半导体封装先导技术研发中心有限公司 | The device encapsulation structure and preparation method thereof to be radiated by fluid channel |
| CN109121282A (en) * | 2018-08-06 | 2019-01-01 | 华进半导体封装先导技术研发中心有限公司 | A kind of plate body radiator structure and preparation method thereof |
| WO2020215803A1 (en) * | 2019-04-25 | 2020-10-29 | 华为技术有限公司 | Heat dissipation apparatus, circuit board, and electronic device |
| CN112616242A (en) * | 2020-12-08 | 2021-04-06 | 武汉光迅科技股份有限公司 | Circuit board and manufacturing method thereof |
| CN115066083A (en) * | 2022-06-01 | 2022-09-16 | 维沃移动通信有限公司 | Circuit board, processing method thereof and electronic equipment |
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| Publication number | Publication date |
|---|---|
| CN106856645B (en) | 2019-04-26 |
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Address after: Guangdong city of Shenzhen province Baoan District Songgang street Chuanyan Luo Lu Yan Applicant after: Peng Ding Holdings (Shenzhen) Limited by Share Ltd Applicant after: Hongqisheng Precision Electronic (Qinhuangdao) Co., Ltd. Applicant after: Peng Ding Polytron Technologies Inc Address before: 518000 Guangdong city of Shenzhen province Baoan District Songgang streets Yan Chuanyan Luzhen Luo Ding Technology Park plant A1 building to building A3 Applicant before: Fuku Precision Components (Shenzhen) Co., Ltd. Applicant before: Hongqisheng Precision Electronic (Qinhuangdao) Co., Ltd. Applicant before: Peng Ding Polytron Technologies Inc |
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Effective date of registration: 20190114 Address after: 066000 No. 18 Tengfei Road, Qinhuangdao Economic and Technological Development Zone, Hebei Province Applicant after: Hongqisheng Precision Electronic (Qinhuangdao) Co., Ltd. Applicant after: Peng Ding Holdings (Shenzhen) Limited by Share Ltd Applicant after: Peng Ding Polytron Technologies Inc Address before: 518105 Yanchuan Yanluo Road, Songgang Street, Baoan District, Shenzhen City, Guangdong Province Applicant before: Peng Ding Holdings (Shenzhen) Limited by Share Ltd Applicant before: Hongqisheng Precision Electronic (Qinhuangdao) Co., Ltd. Applicant before: Peng Ding Polytron Technologies Inc |
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