CN106856183A - The method for monitoring base-plate temp uniformity - Google Patents
The method for monitoring base-plate temp uniformity Download PDFInfo
- Publication number
- CN106856183A CN106856183A CN201510901208.5A CN201510901208A CN106856183A CN 106856183 A CN106856183 A CN 106856183A CN 201510901208 A CN201510901208 A CN 201510901208A CN 106856183 A CN106856183 A CN 106856183A
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- China
- Prior art keywords
- silica
- wafer
- thickness
- uniformity
- plate temp
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Abstract
The present invention proposes a kind of method for monitoring base-plate temp uniformity, silica is formed in crystal column surface, wafer is placed on pedestal and is heated up, it is passed through hydrogen simultaneously, reduction and silica by means of hydrogen are reacted, reduce silica-film thickness, temperature restore-zone reaction rate higher is faster, it is more that the thickness of silica membrane is reduced, thus temperature homogeneity is extrapolated, additionally, the silica that crystal column surface is formed can be removed by wet etching, solve wafer and reclaim problem, and reaction chamber will not be polluted.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of method for monitoring base-plate temp uniformity.
Background technology
In semiconductor fabrication, wafer generally needs to be carried out on the pedestal being placed in reaction chamber accordingly
The technique such as thin film deposition, etching, because reaction needs to carry out at a certain temperature, temperature under normal circumstances
There is provided by pedestal, wafer is heated by pedestal.As the size of wafer is increasing, pedestal also with
Change greatly, but can there is certain deviation by the temperature homogeneity that pedestal is provided.The difference of temperature, causes
The difference of reaction result, directly affects the yield of wafer.Therefore, pedestal is (Celsius more than 1000 at high temperature
Degree) when, it usually needs temperature homogeneity is carried out to it and is monitored.
Fig. 1 is refer to, Fig. 1 is that the system architecture being monitored to reaction chamber indoor temperature in the prior art is illustrated
Figure, wherein, wafer 20 is placed on pedestal 10, and both of which is located in reaction chamber 30, in reaction chamber
30 are externally provided with multiple infrared lamps 40, and the reaction chamber 30 is provided with a quartz window 31, in the stone
A pyrometer 32 is provided with English window 31, for monitoring the temperature in reaction chamber 30, in the reaction chamber
The side of room 30 is additionally provided with a temperature difference heat galvanic couple 33.However, the readings that pyrometer 32 passes through quartz window 31
Being highly susceptible to the influence of film plating layer causes readings inaccurate；Different positions also results in temperature difference heat galvanic couple 33
Readings it is different, also, be merely able to carry out the temperature monitoring of single-point in such scheme.
Additionally, in the prior art, it will usually temperature homogeneity is tested using 4 point probe methods of testing.
4 point probe methods of testing are to be implanted into donor or acceptor to the surface of wafer first；Then, chip is sent to instead
Chamber is answered, is placed on pedestal；Then, the temperature needed for being warming up to processing procedure, the donor or acceptor of implantation
Can be activated at high temperature and then diffusion, so as to influence the resistivity of crystal column surface；Unloading wafer, using 4
The resistivity on point probe test wafer surface, extrapolates the uniformity of temperature.
However, first, 4 point probe methods of testing are a kind of destructive methods, it can be to damaging property of wafer
Injury, cause wafer to reclaim difficult, secondly, the donor of extra implantation or influenceed reaction chamber by cognition
Cleaning, reaction chamber is polluted.It is, therefore, desirable to provide one kind can monitor base-plate temp uniformity
Method, to overcome above mentioned problem.
The content of the invention
It is an object of the invention to provide a kind of method for monitoring base-plate temp uniformity, can be comprehensively to temperature
Degree uniformity is monitored, and wafer is easily reclaimed, and reaction chamber will not be polluted.
To achieve these goals, the present invention proposes a kind of method for monitoring base-plate temp uniformity, including
Step：
Wafer is provided, at least one of which silica is formed on the wafer；
The wafer is placed on pedestal；
Temperature needed for rising to processing procedure, and it is passed through hydrogen to reaction chamber；
Unloading wafer, the change of test wafer superficial silicon dioxide silicon thickness obtains the uniformity of temperature.
Further, in the method for described monitoring base-plate temp uniformity, the dioxy on test wafer surface
The change of SiClx thickness includes step：
After crystal column surface forms at least one of which silica, the thickness to the silica carries out first
Secondary measurement；
In wafer after rising and be gently passed through hydrogen reaction, the thickness to the silica carries out second survey
Amount, the change of thickness is obtained by first time measurement with the difference of measurement for the second time.
Further, in the method for described monitoring base-plate temp uniformity, the silica is 2 layers.
Further, in the method for described monitoring base-plate temp uniformity, the silica useization
Vapour deposition is learned to be formed.
Further, in the method for described monitoring base-plate temp uniformity, the thickness of the silica
Scope is 50 angstroms~500 angstroms.
Further, in the method for described monitoring base-plate temp uniformity, the temperature needed for the processing procedure
More than or equal to 1000 degrees Celsius.
Further, in the method for described monitoring base-plate temp uniformity, if test wafer surface is done
The change of the silicon dioxide thickness at place, obtains the uniformity of crystal column surface silicon dioxide thickness change.
Compared with prior art, the beneficial effects are mainly as follows：Titanium dioxide is formed in crystal column surface
Silicon, wafer is placed on pedestal and is heated up, while be passed through hydrogen, by means of hydrogen reduction with
Silica is reacted, and reduces silica-film thickness, and temperature restore-zone reaction rate higher is more
Hurry up, it is more that the thickness of silica membrane is reduced, and temperature homogeneity is thus extrapolated, additionally, wafer table
The silica that face is formed can be removed by wet etching, solved wafer and reclaimed problem, and will not be to anti-
Chamber is answered to pollute.
Brief description of the drawings
Fig. 1 is the structural representation of the system of monitoring reaction chamber indoor temperature in the prior art；
Fig. 2 is the flow chart of the method for monitoring base-plate temp uniformity in one embodiment of the invention；
Fig. 3 be one embodiment of the invention in for test temperature uniformity wafer structural representation.
Specific embodiment
The method of monitoring base-plate temp uniformity of the invention is retouched in more detail below in conjunction with schematic diagram
State, which show the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change herein
The present invention of description, and still realize advantageous effects of the invention.Therefore, description below is appreciated that
It is widely known for those skilled in the art, and it is not intended as limitation of the present invention.
For clarity, not describing whole features of practical embodiments.In the following description, public affairs are not described in detail
The function and structure known, because they can make the present invention chaotic due to unnecessary details.It will be understood that
In the exploitation of any practical embodiments, it is necessary to make a large amount of implementation details to realize the specific objective of developer,
For example according to about system or the limitation about business, another embodiment is changed into by one embodiment.Separately
Outward, it will be understood that this development is probably complicated and time-consuming, but for people in the art
It is only routine work for member.
The present invention is more specifically described by way of example referring to the drawings in the following passage.According to it is following explanation and
Claims, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is using very simple
The form of change and use non-accurately ratio, be only used to conveniently, lucidly aid in illustrating the embodiment of the present invention
Purpose.
Fig. 2 is refer to, in the present embodiment, it is proposed that a kind of method for monitoring base-plate temp uniformity, including
Step：
S100：Wafer is provided, at least one of which silica is formed on the wafer；
S200：The wafer is placed on pedestal；
S300：Temperature needed for rising to processing procedure, and it is passed through hydrogen to reaction chamber；
S400：Unloading wafer, the change of test wafer superficial silicon dioxide silicon thickness obtains the uniformity of temperature.
Specifically, refer to Fig. 3, at least one of which silica 60 is formed on the surface of wafer 20, in this reality
Apply in example, form 2 layers of silica 60, the silica 60 is using chemical vapor deposition (CVD)
Formed, the thickness range of the silica is 50 angstroms~500 angstroms, e.g. 300 angstroms.
Temperature needed for rising to processing procedure, and it is passed through hydrogen to reaction chamber；Under normal circumstances, the processing procedure institute
The temperature for needing is more than or equal to 1000 degrees Celsius, when temperature is less than 1000 degrees Celsius, the uniformity pair of temperature
Reaction does not result in larger difference, it is therefore preferable that equal to temperature when temperature is more than or equal to 1000 degrees Celsius
Even property is tested.The hydrogen being passed through can be at high temperature with crystal column surface silica carry out reduction reaction,
Silica-film thickness can be reduced, and temperature restore-zone reaction rate higher is faster, silica
It is more that the thickness of film is reduced, and can thus extrapolate temperature homogeneity.
Wherein, the change of the silicon dioxide thickness on test wafer surface includes step：
After the surface of wafer 20 forms at least one of which silica 60, to the thickness of the silica 60
Carry out first time measurement；
Wafer 20 through liter it is gentle be passed through hydrogen reaction after, the is carried out to the thickness of the silica 60
Double measurement, obtains the change of thickness, and then extrapolate temperature by first time measurement and second difference of measurement
The uniformity of degree.Specifically, can also be that if the change of the silicon dioxide thickness at place is done on test wafer surface,
So as to obtain the uniformity of crystal column surface silicon dioxide thickness change, and then obtain the uniformity of temperature.
To sum up, in the method for monitoring base-plate temp uniformity provided in an embodiment of the present invention, in crystal column surface
Silica is formed, wafer is placed on pedestal and is heated up, while hydrogen is passed through, by means of hydrogen
Reduction is reacted with silica, reduces silica-film thickness, temperature restore-zone higher
Reaction rate is faster, and it is more that the thickness of silica membrane is reduced, and thus extrapolates temperature homogeneity, this
Outward, the silica that crystal column surface is formed can be removed by wet etching, solved wafer and reclaimed problem, and
And reaction chamber will not be polluted.
The preferred embodiments of the present invention are above are only, any restriction effect is not played to the present invention.Appoint
What person of ordinary skill in the field, is not departing from the range of technical scheme, to the present invention
The technical scheme and technology contents of exposure make any type of equivalent or modification etc. variation, belong to without departing from
The content of technical scheme, still falls within protection scope of the present invention.
Claims (7)
1. it is a kind of monitor base-plate temp uniformity method, it is characterised in that including step：
Wafer is provided, at least one of which silica is formed on the wafer；
The wafer is placed on pedestal；
Temperature needed for rising to processing procedure, and it is passed through hydrogen to reaction chamber；
Unloading wafer, the change of test wafer superficial silicon dioxide silicon thickness obtains the uniformity of temperature.
2. the method for monitoring base-plate temp uniformity as claimed in claim 1, it is characterised in that test is brilliant
The change of the silicon dioxide thickness of circular surfaces includes step：
After crystal column surface forms at least one of which silica, the thickness to the silica carries out first
Secondary measurement；
In wafer after rising and be gently passed through hydrogen reaction, the thickness to the silica carries out second survey
Amount, the change of thickness is obtained by first time measurement with the difference of measurement for the second time.
3. the method for monitoring base-plate temp uniformity as claimed in claim 1, it is characterised in that described two
Silica is 2 layers.
4. the method for monitoring base-plate temp uniformity as claimed in claim 1, it is characterised in that described two
Silica is formed using chemical vapor deposition.
5. the method for monitoring base-plate temp uniformity as claimed in claim 1, it is characterised in that described two
The thickness range of silica is 50 angstroms~500 angstroms.
6. the method for monitoring base-plate temp uniformity as claimed in claim 1, it is characterised in that the system
The temperature of Cheng Suoxu is more than or equal to 1000 degrees Celsius.
7. the method for monitoring base-plate temp uniformity as claimed in claim 1, it is characterised in that test is brilliant
If circular surfaces do the change of the silicon dioxide thickness at place, the equal of crystal column surface silicon dioxide thickness change is obtained
Even property.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510901208.5A CN106856183B (en) | 2015-12-08 | 2015-12-08 | The method for monitoring base-plate temp uniformity |
| TW105118035A TWI652750B (en) | 2015-12-08 | 2016-06-07 | Method for monitoring temperature uniformity of susceptor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510901208.5A CN106856183B (en) | 2015-12-08 | 2015-12-08 | The method for monitoring base-plate temp uniformity |
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| Publication Number | Publication Date |
|---|---|
| CN106856183A true CN106856183A (en) | 2017-06-16 |
| CN106856183B CN106856183B (en) | 2019-09-17 |
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| CN201510901208.5A Active CN106856183B (en) | 2015-12-08 | 2015-12-08 | The method for monitoring base-plate temp uniformity |
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| TW (1) | TWI652750B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101286466A (en) * | 2007-04-12 | 2008-10-15 | 上海宏力半导体制造有限公司 | Method for detecting temperature distribution of wafer in reaction chamber |
| CN101345187A (en) * | 2007-07-10 | 2009-01-14 | 应用材料股份有限公司 | Novel method for monitoring and calibrating temperature in semiconductor processing chambers |
| JP2014075453A (en) * | 2012-10-03 | 2014-04-24 | Shin Etsu Handotai Co Ltd | Method of manufacturing epitaxial wafer |
-
2015
- 2015-12-08 CN CN201510901208.5A patent/CN106856183B/en active Active
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2016
- 2016-06-07 TW TW105118035A patent/TWI652750B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101286466A (en) * | 2007-04-12 | 2008-10-15 | 上海宏力半导体制造有限公司 | Method for detecting temperature distribution of wafer in reaction chamber |
| CN101345187A (en) * | 2007-07-10 | 2009-01-14 | 应用材料股份有限公司 | Novel method for monitoring and calibrating temperature in semiconductor processing chambers |
| JP2014075453A (en) * | 2012-10-03 | 2014-04-24 | Shin Etsu Handotai Co Ltd | Method of manufacturing epitaxial wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106856183B (en) | 2019-09-17 |
| TW201721783A (en) | 2017-06-16 |
| TWI652750B (en) | 2019-03-01 |
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