CN106849693A - IGBT module - Google Patents
IGBT module Download PDFInfo
- Publication number
- CN106849693A CN106849693A CN201510890753.9A CN201510890753A CN106849693A CN 106849693 A CN106849693 A CN 106849693A CN 201510890753 A CN201510890753 A CN 201510890753A CN 106849693 A CN106849693 A CN 106849693A
- Authority
- CN
- China
- Prior art keywords
- electric
- conductor
- igbt module
- transistor
- conductive part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
Abstract
The present invention relates to a kind of IGBT module, including transistor unit and multiple superposed electric-conductors, insulating barrier is provided between superposed electric-conductor, the transistor unit and electric-conductor are electrically connected.This IGBT module has integrated level higher.
Description
Technical field
The present invention relates to electronics integration field, more particularly to a kind of IGBT module.
Background technology
Insulated gate bipolar transistor (IGBT) module is a kind of electronic device of achievable inversion output, is inverse
Become the core switching device of device.
Traditional IGBT module generally needs outer to connect direct current composite bus bar with output copper bar etc. is exchanged to realize it
Inversion function.In order to ensure electrical connection it is smooth, it usually needs for direct current composite bus bar and exchange export copper bar it is pre-
Reserve larger space.But, this structure causes that IGBT module is (such as above-mentioned outer with its necessary accessory
Connect direct current composite bus bar and exchange output copper bar) operationally need to take very big volume, and can have very big
Weight so that the integrated level of itself is relatively low, and then is even more to be highly detrimental to improve and uses this IGBT
The circuit of module and the integrated level of electronic equipment.
Accordingly, it would be desirable to a kind of integrated level IGBT module higher.
The content of the invention
Regarding to the issue above, the present invention proposes a kind of IGBT module, and it has higher
Integrated level.
A kind of IGBT module, including transistor unit and multiple phases are proposed according to the present invention
Mutually stacked electric-conductor, is provided with insulating barrier, transistor unit and electric-conductor between superposed electric-conductor
Electrical connection.
By using IGBT module of the invention, can by transistor unit and electric-conductor it
Between electrical connection and realize the inversion function of IGBT module.That is, it is not necessary to external again
External direct current composite bus bar with exchange the output other structures such as copper bar, you can realize insulated gate bipolar transistor mould
The inversion function of block.Can effectively be reduced shared by IGBT module by superposed electric-conductor
Volume, and the weight for possessing, so that IGBT module can possess higher
Integrated level, and so that using this IGBT module circuit or electronic equipment it is integrated
Degree is improved.Insulating barrier can be effectively isolated open adjacent electric-conductor, to ensure electric-conductor and coupled crystalline substance
Body pipe unit energy normal work.
In one embodiment, the sense of current of adjacent electric-conductor is opposite offsetting what is produced when electric-conductor is powered
Magnetic field.The magnetic field energy produced when this set causes that electric-conductor is powered is cancelled out each other so that electric-conductor and its
The distributed inductance that surrounding is produced can decline to a great extent.The reduction of this inductance can be greatly reduced IGBT module shut-off wink
Between produced peak voltage, so as to effectively increase the security of IGBT module.
In one embodiment, adjacent electric-conductor is not exclusively overlapped.This set enables adjacent electric-conductor
Some staggers, and so as to increase the area that electric-conductor exposes, and then facilitates to electric-conductor and crystal
Pipe unit is electrically connected.
In one embodiment, multiple superposed electric-conductors include the positive conductive part, the exchange that are sequentially stacked
Electric-conductor and negative conductive part, are provided with the first insulating barrier, just between ac conduction part and negative conductive part
Be provided with the second insulating barrier between pole electric-conductor and ac conduction part, transistor unit include transistor and
Lower transistor, the colelctor electrode of upper transistor is electrically connected with positive conductive part, the emitter stage of upper transistor and lower crystal
The colelctor electrode of pipe is electrically connected with ac conduction part, and the emitter stage of lower transistor is electrically connected with negative conductive part.Pass through
This structure can make IGBT module export alternating current when direct current is passed through to IGBT module.
In one embodiment, positive conductive part, ac conduction part and negative conductive part are sequentially stacked from the bottom to top,
Wherein, ac conduction part covers a part for positive conductive part, and/or negative conductive part part covering ac conduction
A part for part.This structure causes that the structure of IGBT module is relatively stable.
In one embodiment, positive conductive part is connected with radiator, described in the direction in the positive conductive part
The 3rd insulating barrier is provided with the surface of radiator.Radiator and positive conductive can effectively be prevented by this structure
Part is electrically connected.Meanwhile, radiator easily can radiate to IGBT module.
In one embodiment, transistor unit is multiple, and electric-conductor is configured to surround multiple transistor units
Framework.The setting of this structure can further improve the integrated level of IGBT module.
In one embodiment, multiple electric-conductors are configured with input, and at least one electric-conductor is configured with output end,
Wherein, be configured to framework electric-conductor be constructed to allow for multiple transistor units the input and output end it
Between be arranged as at least two rows, electric-conductor is configured with the spacer portion extended between two adjacent row's transistor units
Point.The integrated level of IGBT module can be further improved by this structure.
In one embodiment, the choked flow groove of restricted current direction is constructed on compartment.By this knot
Structure can cause that the electric current inside IGBT module is more uniform.
In one embodiment, input is configured to the forked element electrically connected with Support Capacitor.Conduction can be made
Easily connection and dismounting between part and Support Capacitor.
Compared with prior art, the advantage of the invention is that：(1) can by transistor unit and electric-conductor it
Between electrical connection and realize the inversion function of IGBT module.That is, it is not necessary to external again
External direct current composite bus bar with exchange the output other structures such as copper bar, you can realize insulated gate bipolar transistor mould
The inversion function of block.(2) insulated gate bipolar transistor mould can effectively be reduced by superposed electric-conductor
Volume shared by block, and the weight for possessing, so that IGBT module can possess
Integrated level higher, and so that use the circuit or electronic equipment of this IGBT module
Integrated level be improved.(3) insulating barrier can be effectively isolated open adjacent electric-conductor, with ensure electric-conductor and
Coupled transistor unit energy normal work.
Brief description of the drawings
The invention will be described in more detail below based on embodiments and refering to the accompanying drawings.Wherein：
Fig. 1 is showing the structural representation of one embodiment of IGBT module of the invention
Figure.
Fig. 2 is showing the partial structurtes of one embodiment of IGBT module of the invention.
Fig. 3 is showing the partial structurtes of one embodiment of IGBT module of the invention.
Fig. 4 is showing the knot of one embodiment of the electric-conductor of IGBT module of the invention
Structure schematic diagram.
Fig. 5 is showing the side structure of one embodiment of IGBT module of the invention
Figure.
In the accompanying drawings, identical part uses identical reference.Accompanying drawing is not drawn according to actual ratio.
Specific embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
Fig. 1 schematically shows the entirety of insulated gate bipolar transistor of the invention (IGBT) module 100
Structural representation.IGBT module 100 includes transistor unit 80 and multiple electric-conductors.Can be by transistor
Electrical connection between unit 80 and electric-conductor makes IGBT module realize its function, without extraly external again
Direct current composite bus bar with exchange output copper bar.Wherein, multiple electric-conductors can be superposed, and will by insulating barrier
Adjacent electric-conductor is spaced apart.Thus can guarantee that multiple electric-conductors can not be received or substantially uninterruptedly worked.
The volume and weight of IGBT module 100 can be effectively reduced by said structure, so as to effectively improve
The integrated level of IGBT module 100, and so that use the circuit or electricity of this insulated gate bipolar transistor
The integrated level of sub- equipment is improved.
Fig. 2 shows 100 1 exemplaries of IGBT module.Wherein, transistor unit 80 includes
Upper transistor 30 and lower transistor 40.Upper transistor 30 includes colelctor electrode 31 and emitter stage 32.Lower transistor
40 include colelctor electrode 41 and emitter stage 42.Here transistor unit 80 is the transistor list to tubular type IGBT
Unit, what its 26S Proteasome Structure and Function was well known to those skilled in the art, it is not added with repeating herein.
In an embodiment as illustrated in figure 2, multiple superposed electric-conductors include the positive conductive being sequentially stacked
Part 11, ac conduction part 12 and negative conductive part 13.Between positive conductive part 11 and ac conduction part 12
The second insulating barrier 22 is provided with, the first insulating barrier is provided between ac conduction part 12 and negative conductive part 13
21.It is mutual thus, it is possible to prevent from being produced between positive conductive part 11, ac conduction part 12 and negative conductive part 13
Electrical connection, so as to be effectively ensured positive conductive part 11, ac conduction part 12 and negative conductive part 13 and with
The normal work of transistor unit 80 of its electrical connection.
Transistor unit 80 specifically connects with positive conductive part 11, ac conduction part 12 and negative conductive part 13
Connect mode as shown in Figure 2.Wherein, the colelctor electrode 31 of upper transistor 30 is electrically connected with positive conductive part 11,
The emitter stage 32 of upper transistor is electrically connected with ac conduction part 12.The colelctor electrode 41 of lower transistor 40 with exchange
Electric-conductor 12 is electrically connected, and the emitter stage 42 of lower transistor 40 is electrically connected with negative conductive part 13.Thus,
Can be by the control of extraneous driving plate so that when upper transistor 30 is turned on, lower transistor 40 disconnects；Under
When transistor 40 is turned on, upper transistor 30 disconnects, and the exchange thus, it is possible to realize single transistor unit 80 is defeated
Go out.
Here positive conductive part 11 and negative conductive part 13 is the electric-conductor of logical DC current, can be by red copper system
Into, and carry out Nickel Plating Treatment on surface.Ac conduction part 12 is the electric-conductor of indirect current stream, can be by red copper
It is made, and Nickel Plating Treatment is carried out on surface.First insulating barrier 21 is used to make negative conductive part 13 and ac conduction
Insulated between part 12, can be but be not limited to that PET is two-sided to cover offset plate.Second insulating barrier 22 is used to make ac conduction
Insulated between part 12 and positive conductive part 11, can be but be not limited to that PET is two-sided to cover offset plate.
As shown in figure 3, in IGBT normal works, the sense of current on adjacent electric-conductor is opposite.Leading
When being passed through electric current on electric part, certain magnetic field can be produced around it.Due to sense of current be it is opposite, because
The direction in the magnetic field produced by this adjacent electric-conductor is also opposite, can be cancelled out each other.Thus, can be significantly
Ground reduces the distributed inductance and other stray inductances produced around electric-conductor, and IGBT can be thus greatly reduced
Module 100 power-off moment produced by peak voltage, so as to improve the security of IGBT module 100.
Further, since IGBT module 100 will not produce excessive peak voltage, so IGBT module 100 also may be used
Corresponding protection device (for example, absorbing circuit) is no longer set.
In addition, transistor unit 80 and positive conductive part 11, ac conduction part 12 and negative conductive part 13 it
Between electrical connection can as shown in Figure 2, with conductive capability metal or alloy line realize.In order to protect
Being electrically connected between card transistor unit 80 and positive conductive part 11, ac conduction part 12 and negative conductive part 13
Connect smoothly and stablize, adjacent electric-conductor can be made not exclusively to overlap.That is, one of electric-conductor can not
Sheltered from by electric-conductor adjacent thereto completely.Thus it is to be left necessarily for the metal or alloy line for electrically connecting
Join domain.
For example as shown in Fig. 2 make positive conductive part 11, ac conduction part 12 and negative conductive part 13 by it is lower extremely
On be sequentially stacked.The area of ac conduction part 12 is smaller than the area of positive conductive part 11, so that ac conduction part
12 parts for being only capable of covering positive conductive part 11.The area of negative conductive part 13 is than ac conduction part 12
Area is small, so that negative conductive part 13 is only capable of covering a part for ac conduction part 12.Thus, form as
Forge piece of step type structure shown in Fig. 2.Metal or alloy line for electrically connecting can be connected as shown in Figure 2
Onto uncovered surface.
In addition, this step-like structure is easy to process, and the structure of IGBT module 100 can be caused very
Stabilization.
Additionally, as shown in figure 5, the side that it is provided with positive conductive part 11 of IGBT module 100 and radiating
Device 70 is connected, and the heat produced when IGBT module 100 is worked with facilitating is distributed.In order to ensure positive pole
Insulated between electric-conductor 11 and radiator 70, can be in positive conductive part 11 towards on the surface of radiator 70
3rd insulating barrier 23 is set.
In the case of above-mentioned forge piece of step type structure, the area of positive conductive part 11 is maximum, so that positive pole is led
Fitting area between electric part 11 and radiator 70 is maximum, improves rate of heat dissipation.
In addition, as shown in Figure 5 positive conductive part 11 and negative conductive part 13 can be made to extend to side
To form input 61, and ac conduction part 12 is made to extend to form output end 62 to opposite side.Thus, may be used
By the input direct-current electric current of input 61, and alternating current is obtained at output end 62 and is exported, thus effectively
Realize the inversion function of IGBT module 100.
As shown in figure 1, an IGBT module 100 may include multiple transistor units 80.By transistor unit
80 is a kind of integrated level set-up mode higher along being set in a row from input 61 to the direction of output end 62.For
This setup is realized, electric-conductor can be arranged to framework as shown in Figure 4, it can be as shown in Figure 1
Multiple transistor units 80 are surrounded like that, and make the arranged in rows of transistor unit 80.For example it is as shown in Figure 1
Line up three rows like that.In this case, because for the 3rd row's transistor unit 80, it only needs
Negative conductive part 13 is connected in side, therefore negative conductive part need not surround three row's transistor units 80, only need
Surround two row therein.
In addition, as shown in Figure 1 and Figure 4, electric-conductor is configured with and extends between two adjacent row's transistor units
Compartment 50, two adjacent row's transistor units 80 are spaced apart, and can guarantee that transistor unit 80
Effective connection between electric-conductor.
It is close equal flow relation to ensure between multiple transistor units 80, can be set on compartment 40
Corresponding choked flow groove 51 with prevent electric current by here by.Can be made in multiple electric-conductors by said structure
Electric current is homogenized.
Input 61 can be configured to forked element, and IGBT module 100 is by the forked element and Support Capacitor electricity
Connection.This forked element can make easily connection and dismounting between electric-conductor and Support Capacitor.Preferably, it is defeated
Entering end 61 can be configured to blade forked element as shown in Figure 4, and it can be with Support Capacitor biting connecions grafting.
When needing that IGBT module 100 is safeguarded or changed, only need to pull the joint can easily by IGBT
Module 100 is disassembled.
Additionally, the symmetrical structure that can be configured to as shown in Figure 1 and Figure 4 by multiple electric-conductors, both ensure that IGBT
Electric current current sharing inside module 100, has been also convenient for manufacturing electric-conductor, while facilitating to IGBT
Module 100 is assembled.
IGBT module of the invention 100 can realize the power interconnection of transistor and lower transistor inside it,
Therefore external DC master row can be saved, the over all Integration degree and power for which thereby enhancing IGBT module 100 are close
Degree, and reduce the manufacturing cost of IGBT module 100.
In addition, in the case where external DC master row is set, if single IGBT module (or therein one
Individual transistor unit 80) it is impaired, then need to remove whole busbar, dismounting is difficult, the workload of operating personnel compared with
Greatly.It is and IGBT module 100 of the invention is then not required to corresponding tedious steps, IGBT module 100 is direct
Pulled out from inverter and changed.
IGBT module of the invention 100 and its electrically connect structure be also applied for (and being particularly suited for) intelligence work(
Rate module (IPM).
Here it should be understood that above-mentioned IGBT module 100 may also include it is well known to the skilled artisan in the art
It is any in order that the normal work of IGBT module 100 and necessary feature.
Although by reference to preferred embodiment, invention has been described, is not departing from the scope of the present invention
In the case of, various improvement can be carried out to it and part therein can be replaced with equivalent.Especially, only
Otherwise there is structural hazard, the every technical characteristic being previously mentioned in each embodiment can have been combined in any way
Come.The invention is not limited in specific embodiment disclosed herein, but including falling within the scope of the appended claims
All technical schemes.
Claims (10)
1. a kind of IGBT module, including transistor unit and multiple superposed conductions
Part, is provided with insulating barrier between superposed electric-conductor, and the transistor unit and electric-conductor are electrically connected.
2. IGBT module according to claim 1, it is characterised in that adjacent
The sense of current of the electric-conductor is opposite offsetting the magnetic field produced when electric-conductor is powered.
3. IGBT module according to claim 1 and 2, it is characterised in that phase
The adjacent electric-conductor is not exclusively overlapped.
4. the IGBT module according to any one of Claim 1-3, its feature
It is that multiple superposed electric-conductors include that the positive conductive part, ac conduction part and the negative pole that are sequentially stacked are led
Electric part, is provided with the first insulating barrier, in the positive conductive between the ac conduction part and negative conductive part
The second insulating barrier is provided between part and ac conduction part,
The transistor unit includes transistor and lower transistor, the colelctor electrode of the upper transistor and institute
State the electrical connection of positive conductive part, the colelctor electrode and the friendship of the emitter stage of the upper transistor and the lower transistor
Stream electric-conductor electrical connection, the emitter stage of the lower transistor is electrically connected with the negative conductive part.
5. IGBT module according to claim 4, it is characterised in that it is described just
Pole electric-conductor, ac conduction part and negative conductive part are sequentially stacked from the bottom to top,
Wherein, the ac conduction part covers a part for the positive conductive part, and/or
The negative conductive part part covers a part for the ac conduction part.
6. the IGBT module according to claim 4 or 5, it is characterised in that institute
State positive conductive part to be connected with radiator, set on the surface of the direction radiator of the positive conductive part
There is the 3rd insulating barrier.
7. the IGBT module according to any one of claim 1 to 6, its feature
It is that the transistor unit is multiple, the electric-conductor is configured to surround the frame of multiple transistor units
Body.
8. IGBT module according to claim 7, it is characterised in that Duo Gesuo
State electric-conductor and be configured with input, electric-conductor is configured with output end described at least one,
Wherein, the electric-conductor for being configured to framework is constructed to allow for multiple transistor units in the input
At least two rows are arranged as between end and output end, the electric-conductor is configured with and extends to two adjacent row's transistor lists
Compartment between unit.
9. IGBT module according to claim 8, it is characterised in that described
The choked flow groove of restricted current direction is constructed on compartment.
10. the IGBT module according to any one of claim 1 to 9, its feature
It is that the input is configured to the forked element electrically connected with Support Capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510890753.9A CN106849693A (en) | 2015-12-07 | 2015-12-07 | IGBT module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510890753.9A CN106849693A (en) | 2015-12-07 | 2015-12-07 | IGBT module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106849693A true CN106849693A (en) | 2017-06-13 |
Family
ID=59151944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510890753.9A Pending CN106849693A (en) | 2015-12-07 | 2015-12-07 | IGBT module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106849693A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533833A (en) * | 2007-12-19 | 2009-09-16 | 通用汽车环球科技运作公司 | Busbar assembly with integrated cooling |
| CN101901638A (en) * | 2009-05-29 | 2010-12-01 | 通用汽车环球科技运作公司 | Stacked busbar assembly with integrated cooling device |
| JP2015204409A (en) * | 2014-04-15 | 2015-11-16 | 住友電気工業株式会社 | Silicon carbide semiconductor device and manufacturing method of the same |
-
2015
- 2015-12-07 CN CN201510890753.9A patent/CN106849693A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533833A (en) * | 2007-12-19 | 2009-09-16 | 通用汽车环球科技运作公司 | Busbar assembly with integrated cooling |
| CN101901638A (en) * | 2009-05-29 | 2010-12-01 | 通用汽车环球科技运作公司 | Stacked busbar assembly with integrated cooling device |
| JP2015204409A (en) * | 2014-04-15 | 2015-11-16 | 住友電気工業株式会社 | Silicon carbide semiconductor device and manufacturing method of the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9362040B2 (en) | Coldplate with integrated electrical components for cooling thereof | |
| EP3093974A1 (en) | Three-level power conversion device | |
| DE102015224431A1 (en) | Semiconductor device | |
| US20140369099A1 (en) | Power converter including smoothing capacitor and discharge resistor | |
| CN106256082A (en) | Semiconductor module | |
| CN106026693A (en) | High-integration converter module | |
| CN105450042A (en) | Three-level power converter and power unit thereof | |
| CN206294085U (en) | The arrangement of metal-oxide-semiconductor in new-energy automobile power driver module | |
| US9954409B2 (en) | Power supply device | |
| CN104201911A (en) | Metro traction inversion chopping power unit | |
| CN109525125A (en) | High tension battery charger power module and circuit | |
| CN104734467B (en) | Lift-on/lift-off type stepped construction power model | |
| US20140062210A1 (en) | Mechanical layout for half-bridge power module that is optimized for low inductance | |
| CN107210290A (en) | Semibridge system power semiconductor modular and its manufacture method | |
| CN105429443A (en) | Current Converter Apparatus Having A Multi-Phase Current Converter | |
| CN105514069B (en) | Device with power semiconductor modular, DC voltage busbar connector and capacitor devices | |
| CN108988655A (en) | Power electronic controller and electric car | |
| US20190296638A1 (en) | Power converter | |
| CN104253600A (en) | Power semiconductor circuit | |
| CN106849693A (en) | IGBT module | |
| CN105356304B (en) | Output distribution module and power distribution cabinet | |
| CN107370362A (en) | A kind of controllable output filter of multichannel | |
| CN109936297B (en) | Power electronic module for a charging station, corresponding charging station and charging station | |
| CN205490196U (en) | Compact structure type is parallelly connected three -phase PWM converter system of dc bus side altogether | |
| CN109560714A (en) | Charger and it includes power device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170613 |