CN106849021A - Semiconductor switch over-current detecting method and current transformer - Google Patents
Semiconductor switch over-current detecting method and current transformer Download PDFInfo
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- CN106849021A CN106849021A CN201710162294.1A CN201710162294A CN106849021A CN 106849021 A CN106849021 A CN 106849021A CN 201710162294 A CN201710162294 A CN 201710162294A CN 106849021 A CN106849021 A CN 106849021A
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
- H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/1216—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for AC-AC converters
Abstract
Present invention is disclosed a kind of semiconductor switch over-current detecting method and current transformer, the current transformer includes filter unit and semiconductor devices in parallel, also include the detection capacitance group and detection means that are connected with each other, the detection capacitance group is in parallel with the filter unit, and the detection capacitance group includes an at least electric capacity.The semiconductor switch over-current detecting method and current transformer that the present invention is provided can realize the over-current detection of semiconductor devices by detecting smaller current, while avoiding excessive random thoughts inductance.
Description
Technical field
The present invention relates to electronic technology field, semiconductor switch over-current detecting method and current transformer are especially related to.
Background technology
In the high pressure higher power device such as modern current transformer, largely made using semiconductor devices such as GTO, GCT, IGBT, IGCT
It is its main switching device.Fig. 1 is the general structure of current transformer, and topological structure selection AC-DC-AC, three-phase alternating current passes through
Be changed into direct current after rectification, DC loop uses a capacitor as energy storage link, after inverter direct current be changed into exchange export to
Load.
Overload, current transformer the control parameter improper or external circuit of setting when current transformer is short-circuit, can cause to become
Stream device excessively stream, flows through the significant increase of electric current of semiconductor switch, if without protecting rapidly, may result in semiconductor devices and exceed
, there is latching effect, cross the failure phenomenons such as cause thermal damage in thermoae limit.Therefore overcurrent protection measure must be taken.
Overcurrent protection is divided into detection and protection two parts, i.e., first detect the overcurrent for flowing through semiconductor, then passes through
Rear class safeguard measure, it is to avoid electric current further increases.Fig. 2 to Fig. 4 show the universal architecture of general current transformer, rectification and inversion
Centre is DC circuit, and both sides are alternating current circuit.Existing over-current detection, can substantially be divided into two ways：
First, direct detection electric current.Test point is typically at DC circuit part, i.e. dc bus as shown in Fig. 2 or handing over
Current circuit part, i.e. inverter outlet side are carried out as shown in Figure 3.The detection current device for using is passed for current transformer, Hall
Sensor etc., the size of current that real-time detection flows through, and be compared with the current value of setting, when detection electric current is more than setting value
When, there is excessively stream in judgement, starts overcurrent protection measure.
2nd, semiconductor on-state terminal voltage is detected.It is as Fig. 4 judges semiconductor using the terminal voltage of detection semiconductor devices
No excessively stream, principle is that, when semiconductor is turned on, the electric current and the voltage at two ends for itself flowing through are presented certain proportionate relationship, work as hair
During raw excessively stream, semiconductor both end voltage can steeply rise, by detecting the voltage and being compared with setting value, you can judge
Whether semiconductor switch is in over-current state.
There is following defect in above detection method.
1st, there is detection electric current problems of too in direct detection current system.On higher power device, semiconductor flows through in itself
Rated current it is just very big, when excessively stream occurs, electric current can be caused further to be lifted, the current detection component of selection needs to have
Larger range, while device cost is increased, also limit selectable current detection scheme.
2nd, in DC circuit part, direct detection current system can introduce more stray inductance, make to be carried in semiconductor devices
On shut-off overvoltage increase.Because bus capacitor, copper bar and device all contain stray inductance in itself, when cut-off current, because
Overvoltage can be induced for di/dt is very big, therefore in stray inductance, loading can cause partly to lead on the semiconductor device, when serious
Body device high-voltage breakdown.And the devices such as big current transformer are installed on dc bus or bridge arm, can high current loop
Stray inductance, and then the further shut-off overvoltage in boost device increases device failure risk.
3rd, detect that the method for semiconductor excessively stream is not direct by inverter ac outlet side electric current, when generation bridge arm direct pass
During failure, short circuit current directly flows by between positive and negative busbar of the bridge arm semiconductor devices inside frequency converter, then influences again
Output side transducer electric current, therefore the method cannot in time find semiconductor over-current phenomenon avoidance；
4th, the method for detection semiconductor on-state terminal voltage is influenceed by the working characteristics of switching device, is detected in some cases
It is inaccurate.As shown in figure 5, only between voltage u1 and u2, electric current and voltage journey linear relationship, when saturation region is reached, electric current
Small variations, can all cause the fluctuation of terminal voltage, it is impossible to accurately detect excessively stream.
The content of the invention
The main object of the present invention solves prior art to provide a kind of semiconductor switch over-current detecting method and current transformer
Middle detection electric current is excessive and introduces the more problem of stray inductance.
The present invention proposes a kind of current transformer, including filter unit and semiconductor devices in parallel, it is characterised in that also include
The detection capacitance group and detection means of interconnection, the detection capacitance group are in parallel with the filter unit, the detection electric capacity
Group includes an at least electric capacity.
Further, the detection means and semiconductor devices are also connected respectively including protection control unit, receive described
Protection of the trigger signal and startup of detection means to semiconductor devices.
Further, the capacitance of the capacitance much smaller than the filter unit of the detection capacitance group.
Further, the detection means includes the electric current sensing unit and electric current judging unit that are connected with each other；The electricity
Stream sensing unit is connected with the detection capacitance group.
Further, the electric current sensing unit includes but is not limited to current transformer, Hall current sensor, in-built electrical
The electric capacity of streamline circle, current divider, Rogowski coil.
Further, detection capacitance group include an electric capacity, or an at least electric capacity and the resistance with the capacitances in series and/
Or inductance.
The present invention also proposes a kind of semiconductor switch over-current detecting method, and for above-mentioned current transformer, methods described includes：
Detection means obtains the detection electric current of the detection capacitance group；
The electric current of semiconductor devices according to the detection Current calculation；
Electric current according to the semiconductor devices judges whether excessively stream.
Further, also include：
When the semiconductor devices occurs excessively stream, trigger signal is sent to control unit is protected, trigger overcurrent protection.
Further, the electric current according to semiconductor devices judges whether that excessively stream is specifically included：
The electric current of the semiconductor devices is compared with a default current threshold；
When more than the current threshold, judge that the semiconductor devices occurs excessively stream.
Further, it is described to be specially the step of the electric current of semiconductor devices according to detection Current calculation：
Equivalent circuit according to current transformer determines that the branch current and bus current of detection branch electric capacity flow out the ratio of sum
Value formula；
Calculated according to detection electric current and ratio formula and obtain bus current outflow sum；And
Sum as the electric current of semiconductor devices is flowed out to calculate the bus current for obtaining.
The embodiment of the present invention is by detecting less electric current, it is possible to realize excessively stream, short circuit, the straight-through inspection of semiconductor devices
Survey, excessive stray inductance is introduced in electric current major loop while having and can be prevented effectively from, when will not increase semiconductor devices shut-off
Overvoltage.The semiconductor switch over-current detecting method and current transformer of the embodiment of the present invention have general applicability, can be applicable
In various semiconductor devices and various topologys.
Brief description of the drawings
Fig. 1 is the structure chart of current transformer in the prior art；
Fig. 2 is the structure chart of current transformer detection in the prior art；
Fig. 3 is another structure chart of current transformer detection in the prior art；
Fig. 4 is the another structure chart of current transformer detection in the prior art；
Fig. 5 is the electric current and voltage linearity relationship figure of current transformer detection in the prior art；
Fig. 6 is the structure chart of the current transformer of the embodiment of the present invention one；
Fig. 7 is the structure chart of the current transformer example one of the embodiment of the present invention one；
Fig. 8 is the equivalent circuit diagram of the single busbar of current transformer example one of the embodiment of the present invention one；
Fig. 9 is the equivalent circuit diagram of the double-bus of current transformer example one of the embodiment of the present invention one；
Figure 10 is the structure chart of the current transformer example two of the embodiment of the present invention one；
Figure 11 is the structure chart of the current transformer example three of the embodiment of the present invention one；
Figure 12 is the structure chart of the current transformer example four of the embodiment of the present invention one；
Figure 13 is the schematic diagram of the semiconductor switch over-current detecting method of the embodiment of the present invention two；
Figure 14 be the embodiment of the present invention two semiconductor switch over-current detecting method in calculation procedure schematic diagram；
Figure 15 be the embodiment of the present invention two semiconductor switch over-current detecting method in detecting step schematic diagram.
The realization of the object of the invention, functional characteristics and advantage will be described further referring to the drawings in conjunction with the embodiments.
Specific embodiment
It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not intended to limit the present invention.
Embodiment one
Reference picture 6, the embodiment of the present invention one proposes a kind of current transformer, including：Semiconductor variable parallel operation 50, filtering list in parallel
Unit 10 and semiconductor devices 40, also including the detection capacitance group 20 and detection means 30 that are connected with each other, the detection capacitance group 20
In parallel with filter unit 10, the detection capacitance group 20 includes an at least electric capacity, constitutes detection branch, above-mentioned detection capacitance group 20
Capacitance much smaller than filter unit 10 capacitance.
The current transformer of the embodiment of the present invention one also includes protection control unit 60, respectively connecting detection device 30 and semiconductor
Device 40, the trigger signal of receiving detection device 30 simultaneously starts protection to semiconductor devices 40.
Above-mentioned detection device 30 includes the electric current sensing unit and electric current judging unit that are connected with each other, wherein, electric current sensing
Unit includes but is not limited to current transformer, Hall current sensor, the electric capacity of built-in current coil, current divider, Rogowski coil
Deng.Detection capacitance group 20 may include one or at least two electric capacity, or one or at least two electric capacity and one or at least two electricity
Hold the resistance or inductance of series connection, or one or at least two electric capacity and one or at least two capacitances in series resistance and inductance.
The embodiment of the present invention one is with two level H-bridges topology, I types three-level topology, T-shaped three-level topology and two level three-phases
Current transformer as a example by full-bridge to the embodiment of the present invention one is described in detail.
Example one：Two level H-bridges topology
When power topology is for the level H-bridge of bridge-type two topology, circuit topological structure is as shown in Figure 7.The circuit topology bag
Include：Semiconductor variable parallel operation 50, the first bus capacitor DC filtering unit 11 (including bus capacitor C1~Cn), while being connected across mother
On line and the parallel connection of the first bus capacitor DC filtering unit 11 detection capacitance group (including detection branch electric capacity Ck) and detection
Branch road electric capacity CkIn the electric current sensing unit 31 of same branch road series connection, the current value that electric current sensing unit 31 will be detected is sent to
Connected electric current judging unit 32, when electric current judging unit 32 judges excessively stream occur, will start the protection of rear class connection
Control unit 60, the semiconductor devices 40 that protection control unit 60 is connected across on dc bus by control performs protection act.
Because the electric current that is flowed through on semiconductor is all provided by all electric capacity being connected in parallel on bus, thus when load down,
When output short-circuit or bridge arm direct pass, bus capacitor C is flowed through1~CnAnd the detection branch electric capacity C of parallel connectionkElectric current also can be significant
Increase.And because all electric capacity are connected in parallel on dc bus, therefore the change of electric capacity both end voltage is identical, and each capacitive branch
All contain equivalent series resistance ESR and equivalent series inductance ESL, isoboles as shown in figure 8, calculating the electric current that detection branch flows through
It is shown below：
In a preferred embodiment, when the equiva lent impedance of stray inductance and stray resistance is much smaller than electric capacity impedance in itself,
I.e.：
Then detection branch electric capacity CkThe ratio between branch current and bus current can be reduced to：
(1) electric capacity in bus is for single busbar, i.e. bus only exists parallel relationship, detection branch electric capacity CkBranch road is connected
Resistance RkDuring (not shown) current limliting, detection branch electric capacity CkThe ratio between branch current and bus current can be reduced to：
(2) electric capacity in bus is for single busbar, i.e. bus only exists parallel relationship, detection branch electric capacity CkBranch road is connected
Inductance LkDuring (not shown) current limliting, detection branch electric capacity CkThe ratio between branch current and bus current can be reduced to：
(3) electric capacity in bus is for single busbar, i.e. bus only exists parallel relationship, detection branch electric capacity CkBranch road is connected
Resistance RkAnd inductance LkDuring current limliting, detection branch electric capacity CkThe ratio between branch current and bus current can be reduced to：
(4) when bus is double-bus, as shown in Figure 9.There is parallel relationship in the electric capacity i.e. in bus, while there is string again
During connection relation, then two detection branch, detection branch electric capacity C are neededk1、Ck2Non- series resistance and inductance, then Ck1、Ck2Branch road
The ratio between electric current and upper and lower bus current are
(5) when bus is double-bus, i.e., there is parallel relationship in the electric capacity in bus, while when there is series relationship again,
Then need two detection branch, detection branch electric capacity Ck1Series resistance Rk1Current limliting, detection branch electric capacity Ck2Series resistance Rk2Current limliting
When, then Ck1、Ck2The ratio between branch current and upper and lower bus current are
(6) when bus is double-bus, i.e., there is parallel relationship in the electric capacity in bus, while when there is series relationship again,
Then need two detection branch, detection branch electric capacity Ck1Series inductance Lk1Current limliting, detection branch electric capacity Ck2Series inductance Lk2Current limliting
When, then Ck1、Ck2The ratio between branch current and upper and lower bus current are
(7) when bus is double-bus, i.e., there is parallel relationship in the electric capacity in bus, while when there is series relationship again,
Then need two detection branch, detection branch electric capacity Ck1Series resistance Rk1And inductance Lk1Current limliting, detection branch electric capacity Ck2Series electrical
Resistance Rk2And inductance Lk2During current limliting, then Ck1、Ck2The ratio between branch current and upper and lower bus current are：
U (s) is DC bus-bar voltage；I (s) is capacitive branch electric current；RESRIt is capacitive branch equivalent series resistance；LESLFor
Capacitive branch equivalent series inductance；C is branch road capacitor's capacity；S is Laplace transform operator；
Resr is the ESR of each capacitive branch；
Lesl is the ESL of each capacitive branch；
R is electric capacity CnBranch road series resistance；
L is electric capacity CnBranch road series inductance；
I1…InTo flow through the electric current of each bus capacitor in single busbar；
IkTo flow through the electric current of detection branch electric capacity in single busbar；
Ic is that bus capacitor flows out electric current sum；
C1…CnIt is the capacitance of each bus capacitor on single dc bus.
CkIt is the capacitance of detection branch electric capacity on single dc bus.
Ik1, Ik2During for double dc bus, the electric current of upper and lower two detection branch electric capacity is flowed through；
Upper bus capacitor outflow electric current sum when Ic1 is double dc bus；
Ic2 is double dc bus half of bus capacitor outflow electric current sum at present；
Ck1, Ck2During for double dc bus, the electric capacity of upper and lower two detection branch；
C1…C2nIt is the capacitance of upper and lower each bus capacitor of both sides of double dc bus.
Therefore, the shunt capacitance C on dc busk, can reflect that bus flows out the size variation of electric current.It is mutual by electric current
Electric capacity C in sensor detection capacitance groupkOn the current value that flows through, multiplied by with corresponding proportionality coefficient, you can flowed through half this moment
The size of current of conductor device 40.The electric current is transported to electric current judging unit 32, by the current threshold I_ with default setting
H1 is compared, and when more than electric current current threshold I_H1, judges that semiconductor devices 40 occurs excessively stream, to protection control unit
60 send excessively stream alarm signal, then carry out overcurrent protection by protection control unit 60.
Example two：I type three-level topologies
When power topology is for I three level of type, circuit topological structure is as shown in Figure 10.The circuit topology includes：Semiconductor
Converter 50, (the electric capacity C after by connecting of the second bus capacitor DC filtering unit 121With electric capacity C2Composition, in practical application, electricity
Hold C1Can be made up of multiple capacitances in series, electric capacity C2Can also be made up of multiple capacitances in series), while be connected across on bus and
With (the electric capacity C after by connecting of detection capacitance group 20 of the parallel connection of the second bus capacitor DC filtering unit 12k1With electric capacity Ck2Composition,
Detect the capacitance of the capacitance much smaller than the second bus capacitor DC filtering unit 12 of capacitance group 20, C in practical applicationk1Can be by
Multiple capacitances in series compositions, Ck2Can also be made up of multiple capacitances in series) and detect the electricity that capacitance group 20 is connected in same branch road
Stream sensing unit 31, the current value that electric current sensing unit 31 will be detected be sent to connected electric current judging unit 32, when
When electric current judging unit 32 judges excessively stream occur, the protection control unit 60 of rear class connection will be started, protection control unit 60 is led to
Cross the execution protection act of semiconductor devices 40 that control is connected across on dc bus.
Example three：T-shaped three-level topology
When power topology is for T-shaped three level, circuit topological structure is as shown in figure 11.The difference of the example three and example two
It is the difference of semiconductor devices, its operation principle is similar with example two, and here is omitted.
Example four：Two level three phase full bridges
When power topology is for two level three phase full bridges, circuit topological structure is as shown in figure 12.The example three and example one
Difference be semiconductor devices difference, its operation principle is similar with example one, and here is omitted.
The current transformer of the embodiment of the present invention one can in real time detect and judge the switch conditions of semiconductor devices, by logic
Judge to judge in real time semiconductor devices with the presence or absence of excessively stream, short circuit, straight-through situation, and failure situation is uploaded to protection control
Unit, takes the measures such as closing semiconductor devices, bus discharge, by-pass current to protect system by protection control unit.
Embodiment two
The embodiment of the present invention two proposes a kind of semiconductor switch over-current detecting method, for the unsteady flow of the embodiment of the present invention one
Device.As shown in figure 13, the method for the embodiment of the present invention two comprises the following steps：
S1, detection means obtain the detection electric current of detection capacitance group；
S2, the electric current according to detection Current calculation semiconductor devices；
S3, excessively stream is judged whether according to the electric current of semiconductor devices.
As shown in figure 14, step S2 is specifically included：
S21, the branch current that detection branch electric capacity is determined according to the equivalent circuit of current transformer and bus current outflow sum
Ratio formula；
S22, according to detection electric current and ratio formula calculate obtain bus current outflow sum；And
Sum as the electric current of semiconductor devices is flowed out to calculate the bus current for obtaining.
As shown in figure 15, step S3 is specifically included：
S31, the electric current of semiconductor devices is compared with a default current threshold；
S32, when more than the current threshold, judge semiconductor devices occur excessively stream.
S4, when there is excessively stream in semiconductor devices, send trigger signal to control unit is protected, trigger overcurrent protection.
Specifically, due to the detection capacitance group (the detection capacitance group includes an at least electric capacity) in parallel on dc bus, lead to
Crossing detection capacitance group can reflect that bus flows out the change of electric current, and detection means is detected by electric current sensing unit such as current transformer
The current value of electric capacity, calculates the electric current of semiconductor devices in detection capacitance group, and feeds back to electric current judging unit, is sentenced by electric current
Disconnected unit by the electric current of semiconductor devices and default current threshold I_H1, when more than current threshold I_H1, partly lead by judgement
There is excessively stream in body device, and start overcurrent protection.
By the electric capacity that is connected in parallel on rectilinear generatrix, judge the electric current of semiconductor devices is the method for the embodiment of the present invention two
No generation excessively stream, the method not only can the excessively stream of real-time detection semiconductor devices, short circuit, straight-through detection, while have can be effective
Avoid introducing excessive stray inductance in electric current major loop, overvoltage when semiconductor devices is turned off will not be increased.And the method
With general applicability, go for various semiconductor devices and various topologys.
The preferred embodiments of the present invention are the foregoing is only, the scope of the claims of the invention, every utilization is not thereby limited
Equivalent structure or equivalent flow conversion that description of the invention and accompanying drawing content are made, or directly or indirectly it is used in other correlations
Technical field, be included within the scope of the present invention.
Claims (10)
1. the filter unit and semiconductor devices of a kind of current transformer, including parallel connection, it is characterised in that the also inspection including being connected with each other
Capacitance group and detection means are surveyed, the detection capacitance group is in parallel with the filter unit, the detection capacitance group includes at least one
Electric capacity.
2. current transformer as claimed in claim 1, it is characterised in that also including protection control unit, the detection is connected respectively
Device and semiconductor devices, receive the protection of the trigger signal and startup of the detection means to semiconductor devices.
3. current transformer as claimed in claim 1, it is characterised in that the capacitance of the detection capacitance group is much smaller than the filtering
The capacitance of unit.
4. current transformer as claimed in claim 1, it is characterised in that the detection means includes that the electric current sensing being connected with each other is single
Unit and electric current judging unit；The electric current sensing unit is connected with the detection capacitance group.
5. current transformer as claimed in claim 4, it is characterised in that the electric current sensing unit includes but is not limited to Current Mutual Inductance
Device, Hall current sensor, the electric capacity of built-in current coil, current divider, Rogowski coil.
6. the current transformer as described in claim 1 to 5 any one, it is characterised in that detection capacitance group includes an at least electric capacity,
Or an at least electric capacity and resistance and/or inductance with the capacitances in series.
7. a kind of semiconductor switch over-current detecting method, described for the current transformer as any one of claim 1 to 6
Method includes：
Detection means obtains the detection electric current of the detection capacitance group；
The electric current of semiconductor devices according to the detection Current calculation；
Electric current according to the semiconductor devices judges whether excessively stream.
8. method as claimed in claim 7, it is characterised in that also include：
When the semiconductor devices occurs excessively stream, trigger signal is sent to control unit is protected, trigger overcurrent protection.
9. method as claimed in claim 7, it is characterised in that the electric current according to semiconductor devices judges whether that excessively stream has
Body includes：
The electric current of the semiconductor devices is compared with a default current threshold；
When more than the current threshold, judge that the semiconductor devices occurs excessively stream.
10. the method as described in claim 7-9 any one, it is characterised in that described half according to detection Current calculation
The step of electric current of conductor device, is specially：
Equivalent circuit according to current transformer determines that the ratio of branch current and bus current the outflow sum of detection branch electric capacity is public
Formula；
Calculated according to detection electric current and ratio formula and obtain bus current outflow sum；And
Sum as the electric current of semiconductor devices is flowed out to calculate the bus current for obtaining.
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| CN1918707A (en) * | 2004-02-13 | 2007-02-21 | 奥地利微系统股份公司 | Circuit arrangement and method for protecting an integrated semiconductor circuit |
| CN101242136A (en) * | 2008-02-03 | 2008-08-13 | 天津电气传动设计研究所 | Voltage source frequency converter bridge arm direct pass protector for three level integrated gate pole conversion transistor |
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| CN101685109A (en) * | 2008-09-23 | 2010-03-31 | Abb公司 | Current measurement in an inverter unit and a frequency converter |
| CN101873073A (en) * | 2009-04-21 | 2010-10-27 | 冠捷投资有限公司 | AC to DC converter |
| CN103036214A (en) * | 2011-09-29 | 2013-04-10 | 台达电子企业管理（上海）有限公司 | Power switch series circuit and control method thereof |
| CN104184105A (en) * | 2013-05-27 | 2014-12-03 | 深圳市海洋王照明工程有限公司 | Overcurrent protection device and electronic equipment |
| CN104714164A (en) * | 2013-12-13 | 2015-06-17 | Ct-概念技术有限公司 | Device and method for detecting a short-circuit or excess current condition in a semiconductor power switch |
| CN104901574A (en) * | 2014-03-05 | 2015-09-09 | 日月元科技(深圳)有限公司 | Bridge circuit and short circuit protection method thereof |
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Application publication date: 20170613 |