CN106841812B - 防电源抖动二维电阻阵列读出电路 - Google Patents
防电源抖动二维电阻阵列读出电路 Download PDFInfo
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- CN106841812B CN106841812B CN201611144737.6A CN201611144737A CN106841812B CN 106841812 B CN106841812 B CN 106841812B CN 201611144737 A CN201611144737 A CN 201611144737A CN 106841812 B CN106841812 B CN 106841812B
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- 238000012360 testing method Methods 0.000 claims abstract description 63
- 238000005259 measurement Methods 0.000 claims abstract description 15
- 230000005611 electricity Effects 0.000 claims description 13
- 238000004364 calculation method Methods 0.000 claims description 3
- 101000722054 Homo sapiens Dynamin-like 120 kDa protein, mitochondrial Proteins 0.000 description 18
- 101000614988 Homo sapiens Mediator of RNA polymerase II transcription subunit 12 Proteins 0.000 description 18
- 102100021070 Mediator of RNA polymerase II transcription subunit 12 Human genes 0.000 description 18
- 238000001514 detection method Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 8
- 238000005070 sampling Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000011160 research Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000004088 simulation Methods 0.000 description 4
- 238000003672 processing method Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/14—Measuring resistance by measuring current or voltage obtained from a reference source
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Resistance Or Impedance (AREA)
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CN201611144737.6A CN106841812B (zh) | 2016-12-12 | 2016-12-12 | 防电源抖动二维电阻阵列读出电路 |
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CN201611144737.6A CN106841812B (zh) | 2016-12-12 | 2016-12-12 | 防电源抖动二维电阻阵列读出电路 |
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CN106841812A CN106841812A (zh) | 2017-06-13 |
CN106841812B true CN106841812B (zh) | 2019-02-12 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019161511A1 (en) * | 2018-02-26 | 2019-08-29 | Orpyx Medical Technologies Inc. | Resistance measurement array |
CN111289801B (zh) * | 2020-02-11 | 2022-05-10 | 南京工程学院 | 一种二维电阻阵列读出电路、方法及系统 |
CN115267340B (zh) * | 2022-07-29 | 2023-06-16 | 北京津发科技股份有限公司 | 一种基于等电势屏蔽的检测电路及装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN103925934B (zh) * | 2014-04-30 | 2016-03-30 | 东南大学 | 一种增强电压反馈的阻性传感阵列的检测电路 |
US9324426B2 (en) * | 2014-06-02 | 2016-04-26 | Integrated Silicon Solution, Inc. | Method for improving sensing margin of resistive memory |
CN105424095B (zh) * | 2016-01-04 | 2017-07-28 | 东南大学 | 二维阻性传感器阵列的快速读出电路及其读出方法 |
CN105675024B (zh) * | 2016-01-04 | 2018-01-02 | 东南大学 | 一种阻性传感器阵列的数据读出方法、装置 |
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Application publication date: 20170613 Assignee: Nanjing Zhishang Xinding Kede Technology Group Co.,Ltd. Assignor: NANJING INSTITUTE OF TECHNOLOGY Contract record no.: X2024980002733 Denomination of invention: Anti power jitter two-dimensional resistor array readout circuit Granted publication date: 20190212 License type: Common License Record date: 20240312 |
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Application publication date: 20170613 Assignee: NANJING QIANWEI INTELLIGENT TECHNOLOGY CO.,LTD. Assignor: NANJING INSTITUTE OF TECHNOLOGY Contract record no.: X2024980003131 Denomination of invention: Anti power jitter two-dimensional resistor array readout circuit Granted publication date: 20190212 License type: Common License Record date: 20240322 |