CN106835018A - 一种防紫外节能疏水镀膜金属基材及其制备方法 - Google Patents
一种防紫外节能疏水镀膜金属基材及其制备方法 Download PDFInfo
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- 239000010936 titanium Substances 0.000 claims abstract description 22
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 22
- 229910000484 niobium oxide Inorganic materials 0.000 claims abstract description 13
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims abstract description 13
- -1 polytetrafluoroethylene Polymers 0.000 claims abstract description 13
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- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
本发明公开了一种防紫外节能疏水镀膜金属基材及其制备方法，所述防紫外节能疏水镀膜金属基材包括金属基材基底(0)，所述金属基材基底(0)由内向外依次为金属钛层(1)、氧化铟锡层(2)、氧化铌层(3)、氧化铈层(4)、氮化锆钛层(5)和聚四氟乙烯层(6)。本发明实现防紫外和疏水疏油防污功能，实现高透光率，耐候性优秀，致密均匀，颜色柔和。
Description
技术领域
本发明涉及金属基材制造技术领域，具体涉及一种防紫外节能疏水镀膜金属基材及其制备方法。
背景技术
从公元十八世纪开始，金属表面处理即成为不管是研发或应用上，均极受重视且应用广泛的技术，其主要内容为电镀及阳极防蚀等技术，经长年研发改善，此类处理技术已相当成熟，其成品功能往往能满足客户要求且质量良好，但污染严重及基材限制始终是其最大瓶颈。
目前最常用的制备CoPt磁性薄膜的方法是磁控溅射法。氩离子被阴极加速并轰击阴极靶表面，将靶材表面原子溅射出来沉积在基底表面上形成薄膜。通过更换不同材质的靶和控制不同的溅射时间，便可以获得不同材质和不同厚度的薄膜。磁控溅射法具有镀膜层与基材的结合力强、镀膜层致密、均匀等优点。以金属、合金、低价金属化合物或半导体材料作为靶阴极，在溅射过程中或在基片表面沉积成膜过程中与气体粒子反应生成化合物薄膜，这就是反应磁控溅射。反应磁控溅射广泛应用于化合物薄膜的大批量生产。
现在金属基材的防紫外节能疏水性能的问题亟待解决，目前，缺乏一种具有防紫外节能疏水性能好的防紫外节能疏水镀膜金属基材及其制备方法。
发明内容
本发明的目的是针对上述问题，提供一种具有防紫外节能疏水性能好的防紫外节能疏水镀膜金属基材及其制备方法。
为达到上述目的，本发明采用了下列技术方案：本发明的一种防紫外节能疏水镀膜金属基材，所述防紫外节能疏水镀膜金属基材包括金属基材基底，所述金属基材基底由内向外依次为金属钛层、氧化铟锡层、氧化铌层、氧化铈层、氮化锆钛层和聚四氟乙烯层。
进一步地，所述金属钛层的膜层的厚度为12～30nm，所述氧化铟锡层的膜层的厚度为20～35nm，所述氧化铌层的膜层的厚度为20～28nm，所述氧化铈层的膜层的厚度为15～20nm。
进一步地，所述氮化锆钛层的膜层的厚度为15～20nm，所述聚四氟乙烯层的膜层的厚度为25～35nm。
更进一步地，所述金属基材基底的材质为金属银层。
本发明所述的防紫外节能疏水镀膜金属基材的制备方法，包括如下步骤：
(1)采用平衡或非平衡磁控溅射方式，镀膜设备置于洁净度十万级以内、湿度小于60％的洁净室内，设备冷却水温度在15～25℃；镀膜时本底真空要求：镀膜室真空度＜2.5×10-3Pa、真空室真空度＜1Pa；
(2)金属基材基底经清洗机清洗后，依次通过进入室和隔离室，到达镀膜室，进入镀膜室后，关闭隔离室与镀膜室间的隔离阀，抽真空至本地真空，之后通入氩气和工艺气体维持真空度在0.3～0.9Pa；
(3)待镀膜室腔体内总气压稳定后，将金属基材基底正对溅射靶面，金属基材基底与靶面之间的距离保持在10～20cm，连续开启中频电源、直流电源和射频电源，依次在金属基材基底膜层；
(4)镀膜过程中基底传输速度保持平稳均匀，速度范围为0.9～3.2m/min，制得防紫外节能疏水镀膜金属基材。
进一步地，在步骤(2)和(3)中，镀制时工艺气体为氧气或氮气。
进一步地，在步骤(3)中，电源采用恒功率的范围为10～35kw或恒电流的范围为10～25A。
有益效果：本发明实现防紫外和疏水疏油防污功能，实现高透光率，耐候性优秀，致密均匀，颜色柔和，生产工艺简单自主可控，工艺过程可根据性能参数需求调整。
与现有技术相比，本发明具有如下优点：
(1)本发明采用磁控溅射方式沉积膜系提高了节能效果，外层疏水膜层的水滴角＞117度，具有优良的疏水性能，为提高膜层稳定性和寿命，采用氧化铌和氧化铟锡，综合提高了耐腐蚀性、机械性能等。
(2)本发明的氧化铈、氧化铌结合其他膜层综合实现防紫外性能，疏水性能采用聚四氟乙烯实现，最外层聚四氟乙烯膜层可实现优秀的耐酸碱腐蚀性，并提高耐候性、耐摩擦性等机械性能，具备优良的疏水性能，水滴角＞115度。
(3)本发明的各功能层、金属氧化物膜层及其他辅助膜层之间的匹配关系及沉积工艺参数，实现可见光高透射、防紫外和疏水疏油性能。
附图说明
图1为本发明的防紫外节能疏水镀膜金属基材的示意图；
其中，0金属基材基底、1金属钛层、2氧化铟锡层、3氧化铌层、4氧化铈层、5氮化锆钛层、6聚四氟乙烯层。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，以下将结合附图对本发明的实施方式作进一步地详细描述。
实施例1
本发明的一种防紫外节能疏水镀膜金属基材，所述防紫外节能疏水镀膜金属基材包括金属基材基底0，所述金属基材基底0由内向外依次为金属钛层1、氧化铟锡层2、氧化铌层3、氧化铈层4、氮化锆钛层5和聚四氟乙烯层6。
所述金属钛层1的膜层的厚度为12nm，所述氧化铟锡层2的膜层的厚度为35nm，所述氧化铌层3的膜层的厚度为25nm，所述氧化铈层4的膜层的厚度为15nm。
所述氮化锆钛层5的膜层的厚度为20nm，所述聚四氟乙烯层6的膜层的厚度为29nm。
所述金属基材基底0的材质为金属银层。
本发明所述的防紫外节能疏水镀膜金属基材的制备方法，包括如下步骤：
(1)采用平衡或非平衡磁控溅射方式，镀膜设备置于洁净度十万级以内、湿度小于60％的洁净室内，设备冷却水温度在15℃；镀膜时本底真空要求：镀膜室真空度＜2.5×10- 3Pa、真空室真空度＜1Pa；
(2)金属基材基底经清洗机清洗后，依次通过进入室和隔离室，到达镀膜室，进入镀膜室后，关闭隔离室与镀膜室间的隔离阀，抽真空至本地真空，之后通入氩气和工艺气体维持真空度在0.6Pa；镀制时工艺气体为氧气。
(3)待镀膜室腔体内总气压稳定后，将金属基材基底正对溅射靶面，金属基材基底与靶面之间的距离保持在16cm，连续开启中频电源、直流电源和射频电源，依次在金属基材基底膜层；镀制时工艺气体为氮气。电源采用恒功率的范围为10kw或恒电流的范围为25A。
(4)镀膜过程中基底传输速度保持平稳均匀，速度范围为3.2m/min，制得防紫外节能疏水镀膜金属基材。
实施例2
实施例2与实施例1的区别在于：本发明的一种防紫外节能疏水镀膜金属基材，所述金属钛层1的膜层的厚度为30nm，所述氧化铟锡层2的膜层的厚度为20nm，所述氧化铌层3的膜层的厚度为20nm，所述氧化铈层4的膜层的厚度为20nm。
所述氮化锆钛层5的膜层的厚度为15nm，所述聚四氟乙烯层6的膜层的厚度为25nm。
本发明所述的防紫外节能疏水镀膜金属基材的制备方法，包括如下步骤：
在步骤(1)中，采用平衡或非平衡磁控溅射方式，镀膜设备置于洁净度十万级以内、湿度小于60％的洁净室内，设备冷却水温度在25℃；镀膜时本底真空要求：镀膜室真空度＜2.5×10-3pa、真空室真空度＜1Pa；
在步骤(2)中，金属基材基底经清洗机清洗后，依次通过进入室和隔离室，到达镀膜室，进入镀膜室后，关闭隔离室与镀膜室间的隔离阀，抽真空至本地真空，之后通入氩气和工艺气体维持真空度在0.3Pa；镀制时工艺气体为氮气。
在步骤(3)中，待镀膜室腔体内总气压稳定后，将金属基材基底正对溅射靶面，金属基材基底与靶面之间的距离保持在10cm，连续开启中频电源、直流电源和射频电源，依次在金属基材基底膜层；镀制时工艺气体为氧气。电源采用恒功率的范围为25kw或恒电流的范围为10A。
在步骤(4)中，镀膜过程中基底传输速度保持平稳均匀，速度范围为0.9m/min，制得防紫外节能疏水镀膜金属基材。
实施例3
实施例3与实施例1的区别在于：本发明的一种防紫外节能疏水镀膜金属基材，所述金属钛层1的膜层的厚度为20nm，所述氧化铟锡层2的膜层的厚度为28nm，所述氧化铌层3的膜层的厚度为28nm，所述氧化铈层4的膜层的厚度为18nm。
所述氮化锆钛层5的膜层的厚度为19nm，所述聚四氟乙烯层6的膜层的厚度为35nm。
本发明所述的防紫外节能疏水镀膜金属基材的制备方法，包括如下步骤：
在步骤(1)中，采用平衡或非平衡磁控溅射方式，镀膜设备置于洁净度十万级以内、湿度小于60％的洁净室内，设备冷却水温度在18℃；镀膜时本底真空要求：镀膜室真空度＜2.5×10-3Pa、真空室真空度＜1Pa；
在步骤(2)中，金属基材基底经清洗机清洗后，依次通过进入室和隔离室，到达镀膜室，进入镀膜室后，关闭隔离室与镀膜室间的隔离阀，抽真空至本地真空，之后通入氩气和工艺气体维持真空度在0.9Pa。
在步骤(3)中，待镀膜室腔体内总气压稳定后，将金属基材基底正对溅射靶面，金属基材基底与靶面之间的距离保持在20cm，连续开启中频电源、直流电源和射频电源，依次在金属基材基底膜层。电源采用恒功率的范围为35kw或恒电流的范围为18A。
在步骤(4)中，镀膜过程中基底传输速度保持平稳均匀，速度范围为2.9m/min，制得防紫外节能疏水镀膜金属基材。
尽管本文较多地使用了金属基材基底0、金属钛层1、氧化铟锡层2、氧化铌层3、氧化铈层4、氮化锆钛层5、聚四氟乙烯层6等术语，但并不排除使用其它术语的可能性。使用这些术语仅仅是为了更方便地描述和解释本发明的本质；把它们解释成任何一种附加的限制都是与本发明精神相违背的。
本文中所描述的具体实施例仅仅是对本发明精神作举例说明。本发明所属技术领域的技术人员可以对所描述的具体实施例做各种各样的修改或补充或采用类似的方式替代，但并不会偏离本发明的精神或者超越所附权利要求书所定义的范围。
Claims (7)
1.一种防紫外节能疏水镀膜金属基材，其特征在于：所述防紫外节能疏水镀膜金属基材包括金属基材基底(0)，所述金属基材基底(0)由内向外依次为金属钛层(1)、氧化铟锡层(2)、氧化铌层(3)、氧化铈层(4)、氮化锆钛层(5)和聚四氟乙烯层(6)。
2.根据权利要求1所述的防紫外节能疏水镀膜金属基材，其特征在于：所述金属钛层(1)的膜层的厚度为12～30nm，所述氧化铟锡层(2)的膜层的厚度为20～35nm，所述氧化铌层(3)的膜层的厚度为20～28nm，所述氧化铈层(4)的膜层的厚度为15～20nm。
3.根据权利要求2所述的防紫外节能疏水镀膜金属基材，其特征在于：所述氮化锆钛层(5)的膜层的厚度为15～20nm，所述聚四氟乙烯层(6)的膜层的厚度为25～35nm。
4.根据权利要求3所述的防紫外节能疏水镀膜金属基材，其特征在于：所述金属基材基底(0)的材质为金属银层。
5.权利要求1至4任一项所述的防紫外节能疏水镀膜金属基材的制备方法，其特征在于包括如下步骤：
(1)采用平衡或非平衡磁控溅射方式，镀膜设备置于洁净度十万级以内、湿度小于60％的洁净室内，设备冷却水温度在15～25℃；镀膜时本底真空要求：镀膜室真空度＜2.5×10- 3Pa、真空室真空度＜1Pa；
(2)金属基材基底经清洗机清洗后，依次通过进入室和隔离室，到达镀膜室，进入镀膜室后，关闭隔离室与镀膜室间的隔离阀，抽真空至本地真空，之后通入氩气和工艺气体维持真空度在0.3～0.9Pa；
(3)待镀膜室腔体内总气压稳定后，将金属基材基底正对溅射靶面，金属基材基底与靶面之间的距离保持在10～20cm，连续开启中频电源、直流电源和射频电源，依次在金属基材基底膜层；
(4)镀膜过程中基底传输速度保持平稳均匀，速度范围为0.9～3.2m/min，制得防紫外节能疏水镀膜金属基材。
6.根据权利要求5所述的防紫外节能疏水镀膜金属基材的制备方法，其特征在于：在步骤(2)和(3)中，镀制时工艺气体为氧气或氮气。
7.根据权利要求5所述的防紫外节能疏水镀膜金属基材的制备方法，其特征在于：在步骤(3)中，电源采用恒功率的范围为10～35kw或恒电流的范围为10～25A。
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