CN106817910B - 光学元件堆叠组件 - Google Patents

光学元件堆叠组件 Download PDF

Info

Publication number
CN106817910B
CN106817910B CN201580055984.6A CN201580055984A CN106817910B CN 106817910 B CN106817910 B CN 106817910B CN 201580055984 A CN201580055984 A CN 201580055984A CN 106817910 B CN106817910 B CN 106817910B
Authority
CN
China
Prior art keywords
wafer
optical element
optical elements
substrate
stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580055984.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN106817910A (zh
Inventor
斯蒂芬·海曼加特纳
亚历山大·比特斯
彼得·瑞尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ames Osram Asia Pacific Pte Ltd
Juguang Singapore Ltd
Original Assignee
Heptagon Micro Optics Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heptagon Micro Optics Pte Ltd filed Critical Heptagon Micro Optics Pte Ltd
Publication of CN106817910A publication Critical patent/CN106817910A/zh
Application granted granted Critical
Publication of CN106817910B publication Critical patent/CN106817910B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
    • B32B37/1284—Application of adhesive
    • B32B37/1292—Application of adhesive selectively, e.g. in stripes, in patterns
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • B32B7/14—Interconnection of layers using interposed adhesives or interposed materials with bonding properties applied in spaced arrangements, e.g. in stripes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0944—Diffractive optical elements, e.g. gratings, holograms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0977—Reflective elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4205—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive optical element [DOE] contributing to image formation, e.g. whereby modulation transfer function MTF or optical aberrations are relevant
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1866—Transmission gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • B32B2037/243—Coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/40—Properties of the layers or laminate having particular optical properties
    • B32B2307/412—Transparent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/40—Properties of the layers or laminate having particular optical properties
    • B32B2307/418—Refractive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2551/00—Optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B2207/00—Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Lens Barrels (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
CN201580055984.6A 2014-10-14 2015-10-14 光学元件堆叠组件 Active CN106817910B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462063532P 2014-10-14 2014-10-14
US62/063,532 2014-10-14
PCT/SG2015/050387 WO2016060615A1 (en) 2014-10-14 2015-10-14 Optical element stack assemblies

Publications (2)

Publication Number Publication Date
CN106817910A CN106817910A (zh) 2017-06-09
CN106817910B true CN106817910B (zh) 2019-12-13

Family

ID=55747026

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580055984.6A Active CN106817910B (zh) 2014-10-14 2015-10-14 光学元件堆叠组件

Country Status (8)

Country Link
US (1) US10741613B2 (https=)
EP (1) EP3207416B1 (https=)
JP (1) JP6843745B2 (https=)
KR (1) KR102433712B1 (https=)
CN (1) CN106817910B (https=)
SG (1) SG11201702556TA (https=)
TW (1) TWI684802B (https=)
WO (1) WO2016060615A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10241244B2 (en) 2016-07-29 2019-03-26 Lumentum Operations Llc Thin film total internal reflection diffraction grating for single polarization or dual polarization
DE102017123798B4 (de) * 2017-10-12 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser und Herstellungsverfahren für optoelektronische Halbleiterbauteile
TWI645637B (zh) * 2017-10-18 2018-12-21 華立捷科技股份有限公司 面射型雷射裝置及其製造方法
CN112714692B (zh) * 2018-09-17 2023-08-11 ams传感器新加坡私人有限公司 光学光导和制作光学光导的方法
US11262644B1 (en) * 2019-05-10 2022-03-01 Facebook Technologies, Llc Structured light projector with solid optical spacer element
US11551963B2 (en) * 2020-02-14 2023-01-10 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
DE102023102291A1 (de) * 2023-01-31 2024-08-01 Lpkf Laser & Electronics Se Umformverfahren zur Herstellung von Nanostrukturen sowie eine zur Durchführung bestimmte Vorrichtung

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6235141B1 (en) * 1996-09-27 2001-05-22 Digital Optics Corporation Method of mass producing and packaging integrated optical subsystems
US6669803B1 (en) * 1997-10-03 2003-12-30 Digital Optics Corp. Simultaneous provision of controlled height bonding material at a wafer level and associated structures
US6074725A (en) * 1997-12-10 2000-06-13 Caliper Technologies Corp. Fabrication of microfluidic circuits by printing techniques
US6381072B1 (en) 1998-01-23 2002-04-30 Proxemics Lenslet array systems and methods
US6770503B1 (en) * 1999-10-21 2004-08-03 The Charles Stark Draper Laboratory, Inc. Integrated packaging of micromechanical sensors and associated control circuits
US7329611B2 (en) 2002-04-11 2008-02-12 Nec Corporation Method for forming finely-structured parts, finely-structured parts formed thereby, and product using such finely-structured part
JP3888223B2 (ja) 2002-05-13 2007-02-28 ソニー株式会社 液晶表示素子の製造方法
US7300812B2 (en) * 2004-10-29 2007-11-27 Hewlett-Packard Development Coompany, L.P. Micro electrical mechanical system
US7482193B2 (en) * 2004-12-20 2009-01-27 Honeywell International Inc. Injection-molded package for MEMS inertial sensor
JP2007279222A (ja) 2006-04-04 2007-10-25 Hitachi Maxell Ltd 表示パネル用基板の製造方法
JP2007294336A (ja) * 2006-04-27 2007-11-08 Seiko Epson Corp 発光装置、発光装置の製造方法及び電子機器
US20080118241A1 (en) 2006-11-16 2008-05-22 Tekolste Robert Control of stray light in camera systems employing an optics stack and associated methods
US8546739B2 (en) * 2007-03-30 2013-10-01 Min-Chih Hsuan Manufacturing method of wafer level chip scale package of image-sensing module
JP4420141B2 (ja) 2008-04-28 2010-02-24 コニカミノルタオプト株式会社 ウエハレンズの製造方法及びウエハレンズ
US20090321861A1 (en) * 2008-06-26 2009-12-31 Micron Technology, Inc. Microelectronic imagers with stacked lens assemblies and processes for wafer-level packaging of microelectronic imagers
JP4764942B2 (ja) 2008-09-25 2011-09-07 シャープ株式会社 光学素子、光学素子ウエハ、光学素子ウエハモジュール、光学素子モジュール、光学素子モジュールの製造方法、電子素子ウエハモジュール、電子素子モジュールの製造方法、電子素子モジュールおよび電子情報機器
CN102356463A (zh) * 2009-02-03 2012-02-15 数字光学(东部)公司 光学成像设备及制造该光学成像设备的方法
WO2011055655A1 (ja) 2009-11-05 2011-05-12 コニカミノルタオプト株式会社 撮像装置、光学ユニット、ウエハレンズ積層体及びウエハレンズ積層体の製造方法
US20110221950A1 (en) * 2010-03-12 2011-09-15 Doeke Jolt Oostra Camera device, wafer scale package
WO2011135979A1 (ja) * 2010-04-28 2011-11-03 コニカミノルタオプト株式会社 撮像用レンズの製造方法
US8000041B1 (en) 2010-09-20 2011-08-16 Visera Technologies Company Limited Lens modules and fabrication methods thereof
SG193151A1 (en) 2011-07-19 2013-09-30 Heptagon Micro Optics Pte Ltd Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same
SG10201606882XA (en) 2011-08-25 2016-10-28 Heptagon Micro Optics Pte Ltd Wafer-level fabrication of optical devices, in particular of modules for computational cameras
US8388793B1 (en) * 2011-08-29 2013-03-05 Visera Technologies Company Limited Method for fabricating camera module
US8570669B2 (en) 2012-01-23 2013-10-29 Optiz, Inc Multi-layer polymer lens and method of making same
US9063005B2 (en) * 2012-04-05 2015-06-23 Heptagon Micro Optics Pte. Ltd. Reflowable opto-electronic module
US10153179B2 (en) * 2012-08-24 2018-12-11 Taiwan Semiconductor Manufacturing Company Carrier warpage control for three dimensional integrated circuit (3DIC) stacking
JP6060620B2 (ja) 2012-10-29 2017-01-18 セイコーエプソン株式会社 マイクロレンズアレイの製造方法
US9094593B2 (en) * 2013-07-30 2015-07-28 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules
US10153204B2 (en) * 2014-06-04 2018-12-11 Flir Systems, Inc. Wafer level packaging of reduced-height infrared detectors
EP3374815B1 (en) * 2015-11-12 2022-09-28 Heptagon Micro Optics Pte. Ltd. Optical element stack assemblies

Also Published As

Publication number Publication date
US20170309685A1 (en) 2017-10-26
EP3207416A1 (en) 2017-08-23
TWI684802B (zh) 2020-02-11
JP2017531832A (ja) 2017-10-26
EP3207416A4 (en) 2018-04-18
WO2016060615A1 (en) 2016-04-21
TW201626021A (zh) 2016-07-16
CN106817910A (zh) 2017-06-09
SG11201702556TA (en) 2017-04-27
KR20170072255A (ko) 2017-06-26
JP6843745B2 (ja) 2021-03-17
KR102433712B1 (ko) 2022-08-17
EP3207416B1 (en) 2020-02-26
US10741613B2 (en) 2020-08-11

Similar Documents

Publication Publication Date Title
CN106817910B (zh) 光学元件堆叠组件
CN105493282B (zh) 具有减少漏光或杂散光的屏蔽的光电模块以及用于此类模块的制造方法
CN108780820B (zh) 具有带有用于接纳光学组件的开口的双重包封的光电模块
US20090321861A1 (en) Microelectronic imagers with stacked lens assemblies and processes for wafer-level packaging of microelectronic imagers
KR101966478B1 (ko) 수동 광학 부품을 제조하기 위한 방법 및 그것을 포함하는 장치
KR20150013780A (ko) 웨이퍼 스택 조립
CN108076671B (zh) 包括直接粘附到衬底的间隔件的光学组件
TWI622177B (zh) 光學元件之製造及包含其之模組
CN108700721B (zh) 光学元件堆叠组件
CN110168739B (zh) 光电子模块和光电子模制工具以及其制造方法
US20220227080A1 (en) Replicating optical elements onto a substrate
WO2025214692A1 (en) Oozing phenomena suppression in an optical component
CN115769371A (zh) 光学装置和制造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 26 Woodland Loop, Singapore City, Singapore

Patentee after: Ames Osram Asia Pacific Pte. Ltd.

Country or region after: Singapore

Address before: 26 Woodland Loop, Singapore City, Singapore

Patentee before: HEPTAGON MICRO OPTICS Pte. Ltd.

Country or region before: Singapore

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20241218

Address after: Singapore City

Patentee after: Juguang Singapore Ltd.

Country or region after: Singapore

Address before: 26 Woodland Loop, Singapore City, Singapore

Patentee before: Ames Osram Asia Pacific Pte. Ltd.

Country or region before: Singapore